JP4386453B2 - 樹脂封止された半導体装置 - Google Patents
樹脂封止された半導体装置 Download PDFInfo
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- JP4386453B2 JP4386453B2 JP2006152568A JP2006152568A JP4386453B2 JP 4386453 B2 JP4386453 B2 JP 4386453B2 JP 2006152568 A JP2006152568 A JP 2006152568A JP 2006152568 A JP2006152568 A JP 2006152568A JP 4386453 B2 JP4386453 B2 JP 4386453B2
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- Prior art keywords
- semiconductor device
- inorganic filler
- mass
- composition
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Images
Classifications
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
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Description
有機基板と、該基板上に備えられた少なくとも1つの半導体素子と、該有機基板及び該
半導体素子を封止する硬化された樹脂組成物を含む半導体装置であって、
該半導体装置が、ボードオンチップボールグリッドアレイパッケージであり、
レーザー三次元測定機を用いて測定される、該半導体装置の半導体素子が備えられた基
板面の任意の一の頂点から該面内の対角線方向に高さの変位差の最も大きい値が−600μm未満〜+600μm未満であり、
該半導体装置の総体積に対する該半導体素子の総体積の割合が18〜50%であり、
該硬化された樹脂組成物が(C)無機充填剤を含み、
(C)無機充填剤が、
(C1)40℃〜400℃の平均熱膨張係数が1.0×10 -5 /℃〜3.0×10 -5 /℃である無機充填剤の少なくとも1種と
(C2)40℃〜400℃の平均熱膨張係数が1.0×10 -5 /℃未満の無機充填剤の少なくとも1種からなり、
[(C)の質量/硬化された樹脂組成物の質量]が80〜90%であり、且つ
[(C1)の質量/硬化された樹脂組成物の質量]が5〜45%である、
ことを特徴とする、半導体装置。
また、本発明は、上記半導体装置を調製するのに適した、下記の樹脂組成物である。
(A)エポキシ樹脂、
(A)エポキシ樹脂に含まれるエポキシ基1モルに対して、エポキシ基と反応性の基が0.5〜1.5モルとなる量の(B)硬化剤、
(C)無機充填剤、及び
(D)硬化促進剤
を含む半導体封止用の樹脂組成物において、
(C)無機充填剤が、
(C1)40℃〜400℃の平均熱膨張係数が1.0×10-5/℃〜3.0×10-5/℃である無機充填剤の少なくとも1種と
(C2)40℃〜400℃の平均熱膨張係数が1.0×10-5/℃未満の無機充填剤の少なくとも1種からなり、
[(C)の質量/硬化された樹脂組成物の質量]が80〜90%であり、且つ
[(C1)の質量/硬化された樹脂組成物の質量]が5〜45%である、
ことを特徴とする、組成物。
(A)エポキシ樹脂、
(A)エポキシ樹脂に含まれるエポキシ基1モルに対して、0.5〜1.5となる量の(B)硬化剤、
(C)無機充填剤、及び
(D)硬化促進剤
を含む。
[(C)の質量/硬化された樹脂組成物]が80〜90%であり、且つ、[(C1)の質量/硬化された樹脂組成物]が5〜45%である。C1が上記下限値未満では、組成物から得られる硬化物の熱膨張係数が小さくなり、半導体装置の反りを抑制できなくなる場合があり、上記上限値を超えては、特にC1が不定形の場合、組成物の流動性が悪く、ワイヤー断線、ボイド生成等、成形不良を引き起こす場合がある。また、クリストバライトについては、上述のように、相転移があるが、上記範囲内であれば問題が無い。成分(C)の質量%が上記下限値未満では、樹脂硬化物の吸湿性が高く、該硬化物で封止された半導体装置は耐リフロー性が劣る場合があり、一方、上記上限値を越えては半導体装置の反りが大きい場合があることは、上述のとおりである。
表1に示す成分を、同表に示す質量部で混合した後、夫々、60℃と90℃に加熱された2本ロールにて、均一になるよう溶融混合した後、冷却し、次いで粉砕して半導体封止用エポキシ樹脂組成物を得た。
(A)エポキシ樹脂
(イ)o-クレゾール型エポキシ樹脂 EOCN―1020―55(日本化薬(株)製)
(ロ)ビフェニル基含有フェノールアラルキルエポキシ樹脂:NC―3000(日本化薬(株)製)
(B)硬化剤
(ハ)ノボラック型フェノール樹脂:H-4(明和化成(株))
(ニ)フェノールアラルキル型フェノール樹脂:MEH-7800SS(明和化成(株)製)
(C)無機充填剤
(ホ)球状溶融シリカ:MSR―25、(株)龍森製、40〜400℃の熱膨張係数0.05×10-5/℃、25℃における比重2.25g/cm3
(ヘ)球状クリストバライト:MSR―2500(C)、(株)龍森製、40〜400℃の熱膨張係数2.0×10-5/℃、25℃における比重2.36g/cm3
(ト)結晶シリカ:クリスタライト3K、(株)龍森製、40〜400℃の熱膨張係数1.5×10-5/℃、25℃における比重2.65
(D)硬化促進剤
(チ)トリフェニルホスフィン:TPP(北興化学(株)製)
離型剤
(リ)カルナバワックス(日興ファインプロダクツ(株)製)
シランカップリング剤
(ヌ)KBM−403、γ−グリシドキシプロピルトリメトキシシラン(信越化学工業(株)製)
着色剤
(ル)デンカブラック(電気化学工業(株)製)
スパイラルフロー値
EMMI規格に準じた金型を使用して、175℃、6.9N/mm2、成形時間120秒の条件で測定した。
EMMI規格に準じた金型を用い、射出成型温度175℃、6.9N/mm2、成形時間120秒の条件で5×5×15mmの試験片を得た。室温で、ノギスを用い、長さLmmを0.01mmの単位まで正確に測定し、熱膨張計にセットし、昇温5℃/分、荷重19.6mNで300℃まで測定した。寸法変化と温度のグラフを作成し、ガラス転移温度以下で寸法変化―温度曲線の接線が得られる任意の温度2点(A1、A2)、ガラス転移温度超で接線が得られる任意の2点(B1、B2)、250℃、280℃の寸法(μm)をそれぞれ読み取り、次式により膨張係数を算出した。
ガラス転移温度以下の熱膨張係数:
(A2での寸法−A1での寸法)/((A2−A1)×(L×103))
ガラス転移温度超の熱膨張係数:
(B2での寸法−B1での寸法)/((B2−B1)×(L×103))
250℃から280℃の熱膨張係数×1000:
(280℃での寸法-250℃での寸法)/(30×(L))
断面図が図1で示され、表2に示すような各サイズを有する半導体装置を、175℃、6.9N/mm2、成形時間120秒の条件で成形した。なお、図1において、半導体チップBの数は3個であるが、実際には表2に示す搭載個数である。該半導体装置を、室温まで冷却した後、レーザー三次元測定機を用いてパッケージの対角線方向に高さの変位を測定し、変位差の最も大きい値を基板の反り量とした。表3において、凸型の反りの値を正の値、凹型の反りを負の値で表した。
ダイボンド剤:Able6202C、日本Ablestick社製、ガラス転移温度以下の熱膨張係数7.0×10−5/℃、ガラス転移温度超の熱膨張係数35.0×10−5/℃、ガラス転移温度40℃、硬化後の厚み50μm、
有機回路基板:CCL−HL−832、三菱ガス化学製、ガラス転移温度以下熱膨張係数1.5×10−5/℃、ガラス転移温度以上の熱膨張係数1.1×10−5/℃、ガラス転移温度180℃
反り量測定で用いた半導体装置2を、チップ毎に切断し、85℃/60%RHの恒温恒湿器に168時間放置して吸湿させた後、IRリフロー装置を用い、半導体パッケージの表面温度が、図3に示す変化を示すような熱プロフィールIRリフローに3回通した後に、超音波探査装置を用いて内部クラック又は剥離が発生したチップ数を数えた。
2 半導体チップ
3 ダイボンド層
4 有機回路基板
5 ワイヤー
6 エポキシ樹脂組成物
Claims (13)
- 有機基板と、該基板上に備えられた少なくとも1つの半導体素子と、該有機基板及び該半導体素子を封止する硬化された樹脂組成物を含む半導体装置であって、
該半導体装置が、ボードオンチップボールグリッドアレイパッケージであり、
レーザー三次元測定機を用いて測定される、該半導体装置の半導体素子が備えられた基
板面の任意の一の頂点から該面内の対角線方向に高さの変位差の最も大きい値が−600μm未満〜+600μm未満であり、
該半導体装置の総体積に対する該半導体素子の総体積の割合が18〜50%であり、
該硬化された樹脂組成物が(C)無機充填剤を含み、
(C)無機充填剤が、
(C1)40℃〜400℃の平均熱膨張係数が1.0×10 -5 /℃〜3.0×10 -5 /℃である無機充填剤の少なくとも1種と
(C2)40℃〜400℃の平均熱膨張係数が1.0×10 -5 /℃未満の無機充填剤の少なくとも1種からなり、
[(C)の質量/硬化された樹脂組成物の質量]が80〜90%であり、且つ
[(C1)の質量/硬化された樹脂組成物の質量]が5〜45%である、
ことを特徴とする、半導体装置。
- 前記半導体装置の総体積に対する前記半導体素子の総体積の割合が20〜45%である、請求項1記載の半導体装置。
- 変位差の最も大きい値が−500μm〜+500μmであることを特徴とする、請求項1または2記載の半導体装置。
- 前記無機充填剤(C)が、球形状の充填剤の少なくとも一種を含む、請求項1〜3のいずれか1項記載の半導体装置。
- 前記無機充填剤(C)が、二酸化ケイ素からなる充填剤の少なくとも一種を含む、請求項1〜4のいずれか1項記載の半導体装置。
- 前記有機基板が、ビスマレイミドトリアジン樹脂基板である、請求項1〜5のいずれか1項記載の半導体装置。
- (A)エポキシ樹脂、
(A)エポキシ樹脂に含まれるエポキシ基1モルに対して、エポキシ基と反応性の基が0.5〜1.5モルとなる量の(B)硬化剤、
(C)無機充填剤、及び
(D)硬化促進剤
を含む半導体封止用の樹脂組成物において、
(C)無機充填剤が、
(C1)40℃〜400℃の平均熱膨張係数が1.0×10-5/℃〜3.0×10-5/℃である無機充填剤の少なくとも1種と
(C2)40℃〜400℃の平均熱膨張係数が1.0×10-5/℃未満の無機充填剤の少なくとも1種からなり、
[(C)の質量/硬化された樹脂組成物の質量]が80〜90%であり、且つ
[(C1)の質量/硬化された樹脂組成物の質量]が5〜45%である、
ことを特徴とする、組成物。 - 前記無機充填剤(C1)が、クリストバライトである、請求項7記載の組成物。
- 前記無機充填剤(C1)が、球状である、請求項7または8記載の組成物。
- 前記無機充填剤(C2)が、溶融シリカである請求項7〜9のいずれか1項記載の組成物。
- 前記無機充填剤(C2)が、球状である、請求項7〜10のいずれか1項記載の組成物。
- (B)硬化剤がフェノール樹脂である、請求項7〜11のいずれか1項記載の組成物。
- 硬化された樹脂組成物が、請求項7〜12のいずれか1項記載の組成物が硬化されたものである、請求項1〜6のいずれか1項記載の半導体装置。
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US11/806,184 US7969027B2 (en) | 2006-05-31 | 2007-05-30 | Semiconductor device encapsulated with resin composition |
TW96119229A TWI433775B (zh) | 2006-05-31 | 2007-05-30 | Resin-sealed semiconductor device |
CN200710108713XA CN101083233B (zh) | 2006-05-31 | 2007-05-31 | 用于半导体密封的树脂组合物以及树脂密封的半导体装置 |
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US8304924B2 (en) * | 2009-05-29 | 2012-11-06 | Mitsui Chemicals, Inc. | Composition for sealing semiconductor, semiconductor device, and process for producing semiconductor device |
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JP2013119588A (ja) * | 2011-12-07 | 2013-06-17 | Nitto Denko Corp | 電子部品封止用エポキシ樹脂組成物およびそれを用いた電子部品装置 |
US9434870B2 (en) | 2012-09-19 | 2016-09-06 | Momentive Performance Materials Inc. | Thermally conductive plastic compositions, extrusion apparatus and methods for making thermally conductive plastics |
US8946333B2 (en) * | 2012-09-19 | 2015-02-03 | Momentive Performance Materials Inc. | Thermally conductive plastic compositions, extrusion apparatus and methods for making thermally conductive plastics |
US9269647B2 (en) * | 2014-05-29 | 2016-02-23 | Samsung Electronics Co., Ltd. | Semiconductor package having heat dissipating member |
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