JP6477971B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP6477971B2 JP6477971B2 JP2018516901A JP2018516901A JP6477971B2 JP 6477971 B2 JP6477971 B2 JP 6477971B2 JP 2018516901 A JP2018516901 A JP 2018516901A JP 2018516901 A JP2018516901 A JP 2018516901A JP 6477971 B2 JP6477971 B2 JP 6477971B2
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Description
(a)半導体チップ及び配線回路基板、又は、半導体チップ同士を、間に半導体用接着剤を介した状態で、接続部の金属の融点より低い温度で、それぞれの接続部が互いに接触するように圧着し、仮接続体を得る第一工程と、
(b)仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)封止仮接続体を接続部の金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、を備える、半導体装置の製造方法。
(a)半導体チップ及び配線回路基板、又は、半導体チップ同士を、間に半導体用接着剤を介した状態で、接続バンプの金属の融点より低い温度で、それぞれの接続部が接続バンプに接触するように圧着し、仮接続体を得る第一工程と、
(b)仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)封止仮接続体を接続バンプの金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、を備える、半導体装置の製造方法。
本実施形態の半導体装置の製造方法により得られる半導体装置について、図1及び図2を用いて以下説明する。図1は半導体チップと基板間で接続が行われる場合、図2は半導体チップ間で接続が行われる場合の断面構造を示している。
第一の実施形態の半導体装置の製造方法は、接続部を有する半導体チップ及び接続部を有する配線回路基板を備え、それぞれの接続部が接続バンプを介して互いに電気的に接続された半導体装置、又は、接続部を有する複数の半導体チップを備え、それぞれの接続部が接続バンプを介して互いに電気的に接続された半導体装置の製造方法であって、接続バンプは金属からなり、
(a)半導体チップ及び配線回路基板、又は、半導体チップ同士を、間に半導体用接着剤を介した状態で、接続バンプの金属の融点より低い温度で、それぞれの接続部が接続バンプに接触するように圧着し、仮接続体を得る第一工程と、
(b)仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)封止仮接続体を接続バンプの金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、を備える。
これにより、例えば図1(a)又は図2(a)に示される半導体装置を得ることができる。以下、図2(a)を例にとり、各工程について説明する。
その後、封止仮接続体を、接続バンプ30の融点以上の温度が加わるよう加熱し、配線15と接続バンプ30間に金属結合を形成することで、封止接続体を得る(第三工程)。加熱処理は、熱圧着機、リフロー炉、加圧オーブンなどによって行うことができる。
(a)半導体チップ及び配線回路基板、又は、半導体チップ同士を、間に半導体用接着剤を介した状態で、接続部の金属の融点より低い温度で、それぞれの接続部が互いに接触するように圧着し、仮接続体を得る第一工程と、
(b)仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)封止仮接続体を接続部の金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、を備える。
これにより、例えば図1(b)又は図2(b)に示される半導体装置を得ることができる。
半導体用接着剤は、重量平均分子量10000以下の化合物及び硬化剤をはじめ、下記のとおり様々な成分を含有し得る。
重量平均分子量10000以下の化合物としては特に制限はないが、共に含有される硬化剤と反応するものである。重量平均分子量が10000以下と小さい成分は加熱時に分解等してボイドの原因となり得るが、硬化剤と反応することで高い耐熱性が確保され易い。このような化合物としては、例えば、エポキシ樹脂、(メタ)アクリル化合物、等が挙げられる。
エポキシ樹脂としては、分子内に2個以上のエポキシ基を有するものであれば特に制限はない。エポキシ樹脂としては、例えば、ビスフェノールA型、ビスフェノールF型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型、各種多官能エポキシ樹脂などを使用することができる。これらは単独または2種以上の混合体として使用することができる。耐熱性、取り扱い性の観点から、ビスフェノールF型、フェノールノボラック型、クレゾールノボラック型、ビフェニル型、トリフェニルメタン型から選択してもよい。エポキシ樹脂の配合量は、半導体用接着剤の全体100質量部に対して、例えば10〜50質量部とすることができる。10質量部以上の場合、硬化成分が十分に存在するため、硬化後も樹脂の流動を十分に制御し易く、50質量部以下では、硬化物が硬くなりすぎず、パッケージの反りをより抑制できる傾向がある。
(メタ)アクリル化合物としては、分子内に1個以上の(メタ)アクリロイル基を有するものであれば特に制限はない。(メタ)アクリル化合物としては、例えば、ビスフェノールA型、ビスフェノールF型、ナフタレン型、フェノールノボラック型、クレゾールノボラック型、フェノールアラルキル型、ビフェニル型、トリフェニルメタン型、ジシクロペンタジエン型、フルオレン型、アダマンタン型、各種多官能アクリル化合物等を使用することができる。これらは単独または2種以上の混合体として使用することができる。(メタ)アクリル化合物の配合量は、半導体用接着剤の全体100質量部に対して、10〜50質量部、又は15〜40質量部であってもよい。10質量部以上の場合、硬化成分が十分に存在するため、硬化後も樹脂の流動を十分に制御し易くなる。50質量部以下では、硬化物が硬くなりすぎず、パッケージの反りを更に抑制できる。
硬化剤としては、例えば、フェノール樹脂系硬化剤、酸無水物系硬化剤、アミン系硬化剤、イミダゾール系硬化剤及びホスフィン系硬化剤、アゾ化合物、有機過酸化物等が挙げられる。
フェノール樹脂系硬化剤としては、分子内に2個以上のフェノール性水酸基を有するものであれば特に制限はない。フェノール樹脂系硬化剤としては、例えば、フェノールノボラック、クレゾールノボラック、フェノールアラルキル樹脂、クレゾールナフトールホルムアルデヒド重縮合物、トリフェニルメタン型多官能フェノール及び各種多官能フェノール樹脂を使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
酸無水物系硬化剤としては、例えば、メチルシクロヘキサンテトラカルボン酸二無水物、無水トリメリット酸、無水ピロメリット酸、ベンゾフェノンテトラカルボン酸二無水物及びエチレングリコールビスアンヒドロトリメリテートを使用することができる。これらは単独で又は2種以上の混合物として使用することができる。
アミン系硬化剤としては、例えばジシアンジアミドを使用することができる。
イミダゾール系硬化剤としては、例えば、2−フェニルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノ−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾールトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−ウンデシルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体、2−フェニルイミダゾールイソシアヌル酸付加体、2−フェニル−4,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾール、及び、エポキシ樹脂とイミダゾール類の付加体が挙げられる。これらの中でも、優れた硬化性、保存安定性及び接続信頼性の観点から、1−シアノエチル−2−ウンデシルイミダゾール、1−シアノ−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾールトリメリテイト、1−シアノエチル−2−フェニルイミダゾリウムトリメリテイト、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−エチル−4’−メチルイミダゾリル−(1’)]−エチル−s−トリアジン、2,4−ジアミノ−6−[2’−メチルイミダゾリル−(1’)]−エチル−s−トリアジンイソシアヌル酸付加体、2−フェニルイミダゾールイソシアヌル酸付加体、2−フェニル−4,5−ジヒドロキシメチルイミダゾール及び2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾールから選択してもよい。これらは単独で又は2種以上を併用して用いることができる。また、これらをマイクロカプセル化した潜在性硬化剤としてもよい。
ホスフィン系硬化剤としては、例えば、トリフェニルホスフィン、テトラフェニルホスホニウムテトラフェニルボレート、テトラフェニルホスホニウムテトラ(4−メチルフェニル)ボレート及びテトラフェニルホスホニウム(4−フルオロフェニル)ボレートが挙げられる。
有機過酸化物としては、例えば、ケトンパーオキサイド、パーオキシケタール、ハイドロパーオキサイド、ジアルキルパーオキサイド、ジアシルパーオキサイド、パーオキシジカーボネイト、パーオキシエステル等が挙げられる。保存安定性の観点から、ハイドロパーオキサイド、ジアルキルパーオキサイド、パーオキシエステルから選択してもよい。さらに、耐熱性の観点から、ハイドロパーオキサイド、ジアルキルパーオキサイドから選択してもよい。
重量平均分子量10000超の高分子量成分は、エポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、ポリアミド樹脂、ポリカルボジイミド樹脂、シアネートエステル樹脂、アクリル樹脂、ポリエステル樹脂、ポリエチレン樹脂、ポリエーテルスルホン樹脂、ポリエーテルイミド樹脂、ポリビニルアセタール樹脂、ウレタン樹脂、アクリルゴム等が挙げられる。その中でも耐熱性およびフィルム形成性に優れるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、アクリル樹脂、アクリルゴム、シアネートエステル樹脂、ポリカルボジイミド樹脂等から選択してもよい。さらに耐熱性、フィルム形成性に優れるエポキシ樹脂、フェノキシ樹脂、ポリイミド樹脂、アクリル樹脂、アクリルゴムから選択してもよい。これらの高分子量成分は単独または2種以上の混合体又は共重合体として使用することもできる。
封止用樹脂としては、半導体装置の封止用に用いられる樹脂であれば特に制限されない。そのような樹脂としては、例えばビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールAD型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、ナフタレンジオール型エポキシ樹脂、水添ビスフェノールA型エポキシ樹脂、グリシジルアミン型エポキシ樹脂等が挙げられる。
使用した化合物を以下に示す。
(i)重量平均分子量10000超の高分子量成分
アクリルゴム(日立化成株式会社製、KH−C865、Tg:0〜12℃、Mw:450000〜650000)
フェノキシ樹脂(東都化成株式会社、ZX−1356−2、Tg:約71℃、Mw:約63000)
(ii)重量平均分子量10000以下の化合物:(メタ)アクリル化合物
フルオレン骨格アクリレート(大阪ガスケミカル株式会社、EA0200、2官能基)
(iii)重量平均分子量10000以下の化合物:エポキシ樹脂
トリフェノールメタン骨格含有多官能固形エポキシ(三菱化学株式会社、EP1032H60)
ビスフェノールF型液状エポキシ(三菱化学株式会社、YL983U)
(iv)硬化剤
ジクミル過酸化物(日油株式会社、パークミルD)
2,4−ジアミン−6[2’−メチルイミダゾリル−(1’)−エチル−s−トリアジンイソシアヌル酸付加体(四国化成株式会社、2MAOK−PW))
(v)無機フィラ
シリカフィラ(株式会社アドマテックス、SE2050、平均粒径0.5μm)
エポキシシラン表面処理シリカフィラ(株式会社アドマテックス、SE2050SEJ、平均粒径0.5μm)
メタクリル表面処理ナノシリカフィラ(株式会社アドマテックス、YA050C−SM、以下SMナノシリカとする、平均粒径約50nm)
(vi)樹脂フィラ
有機フィラ(ロームアンドハースジャパン株式会社製、EXL−2655:コアシェルタイプ有機微粒子)
(vii)フラックス剤
2−メチルグルタル酸(アルドリッチ、融点:約77℃)
表1に示す質量割合の(メタ)アクリル化合物又はエポキシ樹脂、無機フィラ、樹脂フィラ及びフラックス剤に対し、NV60%(溶媒40質量%に対し、液状成分、固形成分、フィラ等の接着剤を構成する成分全てが60質量%)になるように有機溶媒(メチルエチルケトン)を添加した。その後、Φ1.0mm及びΦ2.0mmのビーズを固形分と同重量加え、ビーズミル(フリッチュ・ジャパン株式会社、遊星型微粉砕機P−7)で30分撹拌した。その後、高分子量成分を加え、再度、ビーズミルで30分撹拌した。撹拌後、硬化剤を添加して攪拌し、その後に用いたビーズをろ過によって除去し、二種類の樹脂ワニスを得た。
(実施例1)
工程1:上記にて作製したフィルム状接着剤を切り抜き(8mm×8mm×0.045mmt)、基板(20mm×27mm、0.41mm厚、接続部金属:Cu(OSP処理)、製品名:HCTEG−P1180−02、日立化成エレクトロニクス株式会社製)上に貼付した。その上に、はんだバンプ付き半導体チップ(チップサイズ:7.3mm×7.3mm×0.15mmt、バンプ高さ:銅ピラー+はんだ計約45μm、バンプ数328ピン、ピッチ80μm、製品名:SM487A−HC−PLT、住友商事九州株式会社製)を、熱圧着機(FCB3、パナソニック株式会社製)を用いて、ステージ温度80℃、仮圧着温度130℃、仮圧着時間2秒間の条件で仮圧着した。
工程2:仮圧着を行った半導体パッケージ(仮接続体)に対し、モールド装置(株式会社テクノマルチシ製)を用いて、チップ上面の封止を行い、封止体(封止仮接続体)を形成した。
工程3:得られた封止体に対し、上記熱圧着機(FCB3、パナソニック株式会社製)を用いてステージ温度80℃、圧着温度280℃で加熱処理を行い、半導体装置(封止接続体)を作製した。
表2に示すように、加熱処理を熱圧着機(FCB3、パナソニック株式会社製)又はリフロー装置(株式会社タムラ製作所製)を用いて行ったこと、フィルム状接着剤としてフィルム状接着剤A又はBを用いたこと、そして仮圧着温度を130℃(フィルム状接着剤Aを用いた場合)又は80℃(フィルム状接着剤Bを用いた場合)、としたこと以外は、実施例1と同様にして半導体装置を作製した。
表2に示すように、加熱処理を熱圧着機(FCB3、パナソニック株式会社製)又はリフロー装置(株式会社タムラ製作所製)を用いて行ったこと、フィルム状接着剤としてフィルム状接着剤A又はBを用いたこと、工程2と工程3とを入れ替えたこと、そして仮圧着温度を130℃(フィルム状接着剤Aを用いた場合)又は80℃(フィルム状接着剤Bを用いた場合)、としたこと以外は、実施例1と同様にして半導体装置を作製した。なお、工程2と工程3とを入れ替えるとは、基板と半導体チップとの接続が完了した後に、モールド装置を用いて封止処理を行ったということである。
・溶融粘度評価
上記にて作製したフィルム状接着剤に対し、レオメーター(アントンパール ジャパン社製、MCR301)及び治具(ディスポーザブルプレート(直径8mm)とディスポーザブルサンプルディッシュ)を用いて、サンプル厚み400μm、昇温速度10℃/分、周波数1Hz、の条件で、工程1(仮圧着温度:80〜130℃)における溶融粘度を測定した。結果を表2に示す。
・反り評価
上記にて作製した各半導体装置に対し、非接触式形状測定装置(SONY製)を用いて、チップの対角方向の2辺の形状を計測した。EXCELを用いて、計測データの傾きを補正し、1辺の凹凸の最大値と最小値の差を反り量(μm)とした。結果を表2に示す。
Claims (10)
- 接続部を有する半導体チップ及び接続部を有する配線回路基板を備え、それぞれの前記接続部が互いに電気的に接続された半導体装置、又は、接続部を有する複数の半導体チップを備え、それぞれの前記接続部が互いに電気的に接続された半導体装置の製造方法であって、
前記接続部は金属からなり、
(a)前記半導体チップ及び前記配線回路基板、又は、前記半導体チップ同士を、間に半導体用接着剤を介した状態で、前記接続部の金属の融点より低い温度で、それぞれの前記接続部が互いに接触するように圧着し、仮接続体を得る第一工程と、
(b)前記仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)前記封止仮接続体を前記接続部の金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、
を備える、半導体装置の製造方法。 - 接続部を有する半導体チップ及び接続部を有する配線回路基板を備え、それぞれの前記接続部が接続バンプを介して互いに電気的に接続された半導体装置、又は、接続部を有する複数の半導体チップを備え、それぞれの前記接続部が接続バンプを介して互いに電気的に接続された半導体装置の製造方法であって、
前記接続部及び前記接続バンプは金属からなり、
(a)前記半導体チップ及び前記配線回路基板、又は、前記半導体チップ同士を、間に半導体用接着剤を介した状態で、前記接続バンプの金属の融点より低い温度で、それぞれの前記接続部が前記接続バンプに接触するように圧着し、仮接続体を得る第一工程と、
(b)前記仮接続体の少なくとも一部を封止用樹脂を用いて封止し、封止仮接続体を得る第二工程と、
(c)前記封止仮接続体を前記接続バンプの金属の融点以上の温度で加熱し、封止接続体を得る第三工程と、
を備える、半導体装置の製造方法。 - 前記第一工程では、前記半導体チップ及び前記配線回路基板、又は、前記半導体チップ同士を、対向する一対の押圧部材で挟むことによって加熱及び加圧することにより、圧着する、請求項1又は2に記載の半導体装置の製造方法。
- 前記半導体用接着剤が、重量平均分子量10000以下の化合物及び硬化剤を含有し、80〜130℃における溶融粘度が6000Pa・s以下である、請求項1〜3のいずれか一項に記載の半導体装置の製造方法。
- 前記R1がフェニル基である、請求項5に記載の半導体装置の製造方法。
- 前記シラノール化合物が25℃で固形である、請求項5又は6に記載の半導体装置の製造方法。
- 前記半導体用接着剤が、重量平均分子量10000超の高分子量成分を含有する、請求項1〜7のいずれか一項に記載の半導体装置の製造方法。
- 前記高分子量成分が、重量平均分子量30000以上であり且つガラス転移温度が100℃以下の成分である、請求項8に記載の半導体装置の製造方法。
- 前記半導体用接着剤がフィルム状である、請求項1〜9のいずれか一項に記載の半導体装置の製造方法。
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KR102455212B1 (ko) * | 2017-12-18 | 2022-10-17 | 쇼와덴코머티리얼즈가부시끼가이샤 | 반도체 장치, 반도체 장치의 제조 방법 및 접착제 |
JP6926018B2 (ja) * | 2018-03-28 | 2021-08-25 | 東レエンジニアリング株式会社 | 転写基板ならびにこれを用いた実装方法および画像表示装置の製造方法 |
JP7238453B2 (ja) * | 2019-02-15 | 2023-03-14 | 株式会社レゾナック | 半導体用接着剤 |
EP4075485A4 (en) * | 2019-12-13 | 2024-04-10 | Connectec America Inc | METHOD FOR MANUFACTURING ELECTRONIC COMPONENTS |
JP2021129083A (ja) * | 2020-02-17 | 2021-09-02 | キオクシア株式会社 | 半導体装置およびその製造方法 |
US11769730B2 (en) * | 2020-03-27 | 2023-09-26 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of providing high density component spacing |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02280349A (ja) | 1989-04-20 | 1990-11-16 | Mitsubishi Electric Corp | バンプの形成方法およびバンプの接続方法 |
JP2786700B2 (ja) | 1989-11-29 | 1998-08-13 | 株式会社日立製作所 | 半導体集積回路装置の製造方法および製造装置 |
JP3351091B2 (ja) * | 1994-04-01 | 2002-11-25 | 株式会社デンソー | 半導体装置の実装方法 |
JPH10112476A (ja) * | 1996-10-04 | 1998-04-28 | Fuji Xerox Co Ltd | 半導体装置の製造方法 |
JP3376861B2 (ja) * | 1997-07-08 | 2003-02-10 | 松下電器産業株式会社 | バンプ付きワークの実装方法 |
WO2001074962A1 (en) | 2000-03-31 | 2001-10-11 | Hitachi Chemical Co., Ltd. | Adhesive composition, method for preparing the same, adhesive film using the same, substrate for carrying semiconductor and semiconductor device |
JP3597754B2 (ja) * | 2000-04-24 | 2004-12-08 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP4024458B2 (ja) * | 2000-06-27 | 2007-12-19 | 株式会社東芝 | 半導体装置の実装方法および半導体装置実装体の製造方法 |
JP4766831B2 (ja) | 2002-11-26 | 2011-09-07 | 株式会社村田製作所 | 電子部品の製造方法 |
CN100587930C (zh) * | 2005-05-17 | 2010-02-03 | 松下电器产业株式会社 | 倒装片安装体及倒装片安装方法 |
US20060292823A1 (en) | 2005-06-28 | 2006-12-28 | Shriram Ramanathan | Method and apparatus for bonding wafers |
JP4386453B2 (ja) * | 2006-05-31 | 2009-12-16 | 信越化学工業株式会社 | 樹脂封止された半導体装置 |
JP4589269B2 (ja) * | 2006-06-16 | 2010-12-01 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP2008109009A (ja) | 2006-10-27 | 2008-05-08 | Sony Corp | 半導体装置の製造方法 |
JP4305502B2 (ja) * | 2006-11-28 | 2009-07-29 | カシオ計算機株式会社 | 半導体装置の製造方法 |
JP5217260B2 (ja) | 2007-04-27 | 2013-06-19 | 住友ベークライト株式会社 | 半導体ウエハーの接合方法および半導体装置の製造方法 |
JP5123341B2 (ja) | 2010-03-15 | 2013-01-23 | 信越化学工業株式会社 | 接着剤組成物、半導体ウエハ保護膜形成用シート |
JP6109569B2 (ja) * | 2010-05-07 | 2017-04-05 | 住友ベークライト株式会社 | 回路基板用エポキシ樹脂組成物、プリプレグ、積層板、樹脂シート、プリント配線板用積層基材、プリント配線板、及び半導体装置 |
CN103222040B (zh) * | 2010-09-30 | 2015-12-02 | 日立化成株式会社 | 粘接剂组合物、半导体装置的制造方法以及半导体装置 |
JP5344097B2 (ja) * | 2010-11-18 | 2013-11-20 | 日立化成株式会社 | 半導体封止充てん用フィルム状樹脂組成物、半導体装置の製造方法及び半導体装置 |
JP5866851B2 (ja) * | 2011-08-05 | 2016-02-24 | 日立化成株式会社 | 半導体装置の製造方法、フィルム状接着剤及び接着剤シート |
JP2013065835A (ja) | 2011-08-24 | 2013-04-11 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法、ブロック積層体及び逐次積層体 |
JP5780228B2 (ja) | 2011-11-11 | 2015-09-16 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
TWI583723B (zh) * | 2012-01-20 | 2017-05-21 | Asahi Kasei E-Materials Corp | Multilayer printed circuit boards |
JP6209313B2 (ja) * | 2012-02-20 | 2017-10-04 | デクセリアルズ株式会社 | 異方性導電フィルム、接続構造体、接続構造体の製造方法及び接続方法 |
US20150014842A1 (en) * | 2012-02-24 | 2015-01-15 | Hitachi Chemical Company, Ltd. | Semiconductor device and production method therefor |
JP6047888B2 (ja) | 2012-02-24 | 2016-12-21 | 日立化成株式会社 | 半導体用接着剤及び半導体装置の製造方法 |
WO2013133015A1 (ja) | 2012-03-07 | 2013-09-12 | 東レ株式会社 | 半導体装置の製造方法および半導体装置の製造装置 |
JP5990940B2 (ja) | 2012-03-09 | 2016-09-14 | 日立化成株式会社 | 回路接続構造体の製造方法 |
JP2014143316A (ja) | 2013-01-24 | 2014-08-07 | Sanyu Rec Co Ltd | フリップチップ部品の樹脂封止方法 |
JP6424819B2 (ja) * | 2013-07-11 | 2018-11-21 | 住友ベークライト株式会社 | 半導体装置の製造方法および半導体装置 |
WO2015186744A1 (ja) * | 2014-06-04 | 2015-12-10 | 日立化成株式会社 | フィルム状エポキシ樹脂組成物、フィルム状エポキシ樹脂組成物の製造方法、及び半導体装置の製造方法 |
JP2016046299A (ja) * | 2014-08-20 | 2016-04-04 | 日立化成株式会社 | 半導体接続部封止用接着剤及びこれを用いた半導体装置、半導体装置の製造方法 |
JP2016058655A (ja) * | 2014-09-11 | 2016-04-21 | 株式会社ジェイデバイス | 半導体装置の製造方法 |
TW201705368A (zh) | 2015-03-30 | 2017-02-01 | Toray Eng Co Ltd | 半導體裝置之製造方法、半導體安裝裝置及以半導體裝置之製造方法所製造之記憶體裝置 |
JP6504263B2 (ja) * | 2015-10-29 | 2019-04-24 | 日立化成株式会社 | 半導体用接着剤、半導体装置及びそれを製造する方法 |
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WO2017195517A1 (ja) | 2017-11-16 |
TWI721150B (zh) | 2021-03-11 |
SG11201809734RA (en) | 2018-12-28 |
CN109075088A (zh) | 2018-12-21 |
KR102190177B1 (ko) | 2020-12-11 |
KR20180128958A (ko) | 2018-12-04 |
TW201806044A (zh) | 2018-02-16 |
JPWO2017195517A1 (ja) | 2018-11-22 |
US20190123014A1 (en) | 2019-04-25 |
CN109075088B (zh) | 2022-01-07 |
US10734350B2 (en) | 2020-08-04 |
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