CN106531219A - 存储器装置 - Google Patents
存储器装置 Download PDFInfo
- Publication number
- CN106531219A CN106531219A CN201610137236.9A CN201610137236A CN106531219A CN 106531219 A CN106531219 A CN 106531219A CN 201610137236 A CN201610137236 A CN 201610137236A CN 106531219 A CN106531219 A CN 106531219A
- Authority
- CN
- China
- Prior art keywords
- wordline
- memory cell
- voltage
- semiconductor layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-180378 | 2015-09-14 | ||
JP2015180378A JP6400547B2 (ja) | 2015-09-14 | 2015-09-14 | メモリデバイス |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106531219A true CN106531219A (zh) | 2017-03-22 |
CN106531219B CN106531219B (zh) | 2019-11-22 |
Family
ID=58162353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610137236.9A Active CN106531219B (zh) | 2015-09-14 | 2016-03-10 | 存储器装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9589660B1 (zh) |
JP (1) | JP6400547B2 (zh) |
CN (1) | CN106531219B (zh) |
TW (1) | TWI606577B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111696599A (zh) * | 2019-03-13 | 2020-09-22 | 东芝存储器株式会社 | 半导体存储装置及其控制方法 |
CN112447204A (zh) * | 2019-09-03 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
CN113299330A (zh) * | 2020-02-24 | 2021-08-24 | 闪迪技术有限公司 | 倒序编程的源极侧预充电和升压改进 |
CN113690241A (zh) * | 2020-05-18 | 2021-11-23 | 铠侠股份有限公司 | 半导体存储装置 |
CN114067891A (zh) * | 2020-08-05 | 2022-02-18 | 华邦电子股份有限公司 | 半导体装置及与非型闪速存储器的读出方法 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107887395B (zh) | 2017-11-30 | 2018-12-14 | 长江存储科技有限责任公司 | Nand存储器及其制备方法 |
US10629271B2 (en) | 2017-12-05 | 2020-04-21 | Intel Corporation | Method and system for reducing program disturb degradation in flash memory |
KR102374103B1 (ko) | 2018-01-16 | 2022-03-14 | 삼성전자주식회사 | 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 소거 방법 |
US10541037B2 (en) * | 2018-06-07 | 2020-01-21 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for program disturb including delayed ramp down during program verify |
JP2020004470A (ja) | 2018-06-29 | 2020-01-09 | キオクシア株式会社 | 半導体記憶装置 |
JP2020038930A (ja) * | 2018-09-05 | 2020-03-12 | キオクシア株式会社 | 半導体メモリ装置及び半導体メモリ装置の製造方法 |
US10665300B1 (en) | 2018-11-12 | 2020-05-26 | Micron Technology, Inc. | Apparatus and methods for discharging control gates after performing an access operation on a memory cell |
JP7102363B2 (ja) * | 2019-03-18 | 2022-07-19 | キオクシア株式会社 | 半導体記憶装置 |
JP2020155577A (ja) * | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
KR20210010210A (ko) * | 2019-07-19 | 2021-01-27 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자 |
US10790003B1 (en) * | 2019-07-31 | 2020-09-29 | Sandisk Technologies Llc | Maintaining channel pre-charge in program operation |
JP2021034090A (ja) | 2019-08-28 | 2021-03-01 | キオクシア株式会社 | 不揮発性半導体記憶装置 |
JP7239719B2 (ja) | 2019-08-28 | 2023-03-14 | 長江存儲科技有限責任公司 | フラッシュメモリデバイス |
US10957394B1 (en) * | 2020-02-10 | 2021-03-23 | Sandisk Technologies Llc | NAND string pre-charge during programming by injecting holes via substrate |
US11621045B2 (en) * | 2020-03-04 | 2023-04-04 | Intel Corporation | Non volatile flash memory with improved verification recovery and column seeding |
JP7446879B2 (ja) * | 2020-03-18 | 2024-03-11 | キオクシア株式会社 | 半導体記憶装置 |
US11205493B1 (en) * | 2020-10-26 | 2021-12-21 | Sandisk Technologies Llc | Controlling word line voltages to reduce read disturb in a memory device |
JP2022122792A (ja) * | 2021-02-10 | 2022-08-23 | キオクシア株式会社 | 半導体記憶装置 |
US11862249B2 (en) * | 2021-11-16 | 2024-01-02 | Sandisk Technologies Llc | Non-volatile memory with staggered ramp down at the end of pre-charging |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970691A (en) * | 1988-04-13 | 1990-11-13 | Kabushiki Kaisha Toshiba | 2-cell/1-bit type EPROM |
US20040046212A1 (en) * | 2001-02-07 | 2004-03-11 | Fujitsu Limited | Semiconductor memory capable of being driven at low voltage and its manufacture method |
US20070047313A1 (en) * | 2005-08-31 | 2007-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
JP2010102792A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2011008838A (ja) * | 2009-06-23 | 2011-01-13 | Toshiba Corp | 不揮発性半導体記憶装置およびその書き込み方法 |
US20130100754A1 (en) * | 2011-10-19 | 2013-04-25 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and method of reading data thereof |
Family Cites Families (14)
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JP4284300B2 (ja) | 2005-05-02 | 2009-06-24 | 株式会社東芝 | 半導体記憶装置 |
JP2007193862A (ja) | 2006-01-17 | 2007-08-02 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5142692B2 (ja) | 2007-12-11 | 2013-02-13 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2009238874A (ja) | 2008-03-26 | 2009-10-15 | Toshiba Corp | 半導体メモリ及びその製造方法 |
JP2009266944A (ja) | 2008-04-23 | 2009-11-12 | Toshiba Corp | 三次元積層不揮発性半導体メモリ |
JP5283960B2 (ja) | 2008-04-23 | 2013-09-04 | 株式会社東芝 | 三次元積層不揮発性半導体メモリ |
JP4881401B2 (ja) | 2009-03-23 | 2012-02-22 | 株式会社東芝 | Nand型フラッシュメモリ |
JP2011198435A (ja) | 2010-03-23 | 2011-10-06 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8565020B2 (en) * | 2010-04-14 | 2013-10-22 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
JP5898657B2 (ja) | 2013-09-02 | 2016-04-06 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2015216179A (ja) | 2014-05-08 | 2015-12-03 | 株式会社東芝 | 半導体記憶装置 |
JP6514450B2 (ja) | 2014-07-10 | 2019-05-15 | レック株式会社 | 排水口用ぬめり取り器 |
JP5946869B2 (ja) | 2014-08-08 | 2016-07-06 | ニチハ株式会社 | 外壁取付部材及び外壁構造 |
JP6230512B2 (ja) | 2014-09-10 | 2017-11-15 | 東芝メモリ株式会社 | 半導体メモリ |
-
2015
- 2015-09-14 JP JP2015180378A patent/JP6400547B2/ja active Active
-
2016
- 2016-03-09 TW TW105107259A patent/TWI606577B/zh active
- 2016-03-10 CN CN201610137236.9A patent/CN106531219B/zh active Active
- 2016-06-06 US US15/174,580 patent/US9589660B1/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4970691A (en) * | 1988-04-13 | 1990-11-13 | Kabushiki Kaisha Toshiba | 2-cell/1-bit type EPROM |
US20040046212A1 (en) * | 2001-02-07 | 2004-03-11 | Fujitsu Limited | Semiconductor memory capable of being driven at low voltage and its manufacture method |
US20070047313A1 (en) * | 2005-08-31 | 2007-03-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
JP2010102792A (ja) * | 2008-10-24 | 2010-05-06 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2011008838A (ja) * | 2009-06-23 | 2011-01-13 | Toshiba Corp | 不揮発性半導体記憶装置およびその書き込み方法 |
US20130100754A1 (en) * | 2011-10-19 | 2013-04-25 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and method of reading data thereof |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111696599A (zh) * | 2019-03-13 | 2020-09-22 | 东芝存储器株式会社 | 半导体存储装置及其控制方法 |
CN111696599B (zh) * | 2019-03-13 | 2023-10-31 | 铠侠股份有限公司 | 半导体存储装置及其控制方法 |
CN112447204A (zh) * | 2019-09-03 | 2021-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
CN112447204B (zh) * | 2019-09-03 | 2023-08-25 | 铠侠股份有限公司 | 半导体存储装置 |
CN113299330A (zh) * | 2020-02-24 | 2021-08-24 | 闪迪技术有限公司 | 倒序编程的源极侧预充电和升压改进 |
CN113690241A (zh) * | 2020-05-18 | 2021-11-23 | 铠侠股份有限公司 | 半导体存储装置 |
CN113690241B (zh) * | 2020-05-18 | 2024-03-05 | 铠侠股份有限公司 | 半导体存储装置 |
CN114067891A (zh) * | 2020-08-05 | 2022-02-18 | 华邦电子股份有限公司 | 半导体装置及与非型闪速存储器的读出方法 |
Also Published As
Publication number | Publication date |
---|---|
CN106531219B (zh) | 2019-11-22 |
TWI606577B (zh) | 2017-11-21 |
TW201711173A (zh) | 2017-03-16 |
JP6400547B2 (ja) | 2018-10-03 |
US20170076814A1 (en) | 2017-03-16 |
JP2017059276A (ja) | 2017-03-23 |
US9589660B1 (en) | 2017-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170811 Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Applicant before: Toshiba Corp. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo Patentee after: Kaixia Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo Patentee before: Pangea Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220130 Address after: Tokyo Patentee after: Pangea Co.,Ltd. Address before: Tokyo Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right |