CN105758203B - 热处理装置 - Google Patents
热处理装置 Download PDFInfo
- Publication number
- CN105758203B CN105758203B CN201610228229.XA CN201610228229A CN105758203B CN 105758203 B CN105758203 B CN 105758203B CN 201610228229 A CN201610228229 A CN 201610228229A CN 105758203 B CN105758203 B CN 105758203B
- Authority
- CN
- China
- Prior art keywords
- heat
- control device
- power supply
- thermoelectric conversion
- conversion member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000137 annealing Methods 0.000 title claims abstract description 38
- 238000010438 heat treatment Methods 0.000 claims abstract description 104
- 238000006243 chemical reaction Methods 0.000 claims abstract description 92
- 230000002159 abnormal effect Effects 0.000 description 19
- 230000007246 mechanism Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 230000005611 electricity Effects 0.000 description 5
- 230000005619 thermoelectricity Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005678 Seebeck effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Furnace Details (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012222863A JP5951438B2 (ja) | 2012-10-05 | 2012-10-05 | 熱処理装置 |
JPJP2012-222863 | 2012-10-05 | ||
CN201310064393.8A CN103712465B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310064393.8A Division CN103712465B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105758203A CN105758203A (zh) | 2016-07-13 |
CN105758203B true CN105758203B (zh) | 2019-01-01 |
Family
ID=50405637
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610228229.XA Active CN105758203B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
CN201310064393.8A Active CN103712465B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310064393.8A Active CN103712465B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5951438B2 (ko) |
KR (1) | KR101429387B1 (ko) |
CN (2) | CN105758203B (ko) |
TW (1) | TWI492309B (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6442339B2 (ja) | 2015-03-26 | 2018-12-19 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6498060B2 (ja) * | 2015-07-01 | 2019-04-10 | 中外炉工業株式会社 | 工業炉の制御方法 |
KR102295852B1 (ko) * | 2018-06-21 | 2021-08-31 | 한국전기연구원 | 다기능 축열 열전하이브리드 발전장치 |
JP6925377B2 (ja) * | 2019-03-12 | 2021-08-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
CN111706843B (zh) * | 2020-07-01 | 2021-01-15 | 海南鸣川智能科技有限公司 | 一种可将热能进行多级回收利用的船舶用尾气处理装置 |
JP2022049287A (ja) * | 2020-09-16 | 2022-03-29 | 高砂工業株式会社 | 熱処理炉および熱処理設備 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593936A (zh) * | 2012-02-20 | 2012-07-18 | 海尔集团公司 | 一种太阳能与市电互补式制冷供电系统 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0545067A (ja) * | 1991-08-08 | 1993-02-23 | Toshiba Corp | 溶解炉装置 |
JPH06154589A (ja) * | 1992-11-20 | 1994-06-03 | Kubota Corp | エネルギー回収型の断熱容器 |
JP2000068183A (ja) * | 1998-08-19 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | 基板加熱処理装置ならびに基板加熱処理装置の熱エネルギー変換方法および熱エネルギー回収方法 |
JP4178746B2 (ja) * | 2000-12-04 | 2008-11-12 | 株式会社Ihi | 工業炉用熱電発電装置 |
JP4742431B2 (ja) | 2001-02-27 | 2011-08-10 | 東京エレクトロン株式会社 | 熱処理装置 |
JP3856293B2 (ja) * | 2001-10-17 | 2006-12-13 | 日本碍子株式会社 | 加熱装置 |
JP2004350479A (ja) * | 2003-05-26 | 2004-12-09 | Hitachi Powdered Metals Co Ltd | 熱電変換発電ユニットおよびこの熱電変換発電ユニットを備えるトンネル型炉 |
JP4661235B2 (ja) * | 2005-01-27 | 2011-03-30 | 株式会社Ihi | 熱電変換装置 |
JP4808425B2 (ja) | 2005-03-22 | 2011-11-02 | 光洋サーモシステム株式会社 | 熱処理装置 |
JP5087875B2 (ja) * | 2006-07-31 | 2012-12-05 | 株式会社Ihi | 熱処理装置 |
JP5040213B2 (ja) * | 2006-08-15 | 2012-10-03 | 東京エレクトロン株式会社 | 熱処理装置、熱処理方法及び記憶媒体 |
US8260166B2 (en) * | 2007-05-24 | 2012-09-04 | Ricoh Company, Limited | Image forming apparatus and electric appliance including a thermoelectric element |
CN101650068B (zh) * | 2008-08-12 | 2012-05-02 | 广东万和新电气股份有限公司 | 带有热电转换装置自供电的强排燃气热水器 |
CN201561547U (zh) * | 2009-05-04 | 2010-08-25 | 广州市红日燃具有限公司 | 一种带自供电装置的燃气热水器 |
JP2011129827A (ja) | 2009-12-21 | 2011-06-30 | Sharp Corp | 太陽電池システム |
RU2012137692A (ru) * | 2010-03-10 | 2014-04-20 | БиЭйчПи БИЛЛИТОН ЭЛЮМИНИУМ ТЕКНОЛОДЖИС ЛИМИТЕД | Система регенерации тепла для пирометаллургического сосуда с применением термоэлектрических/термомагнитных устройств |
JP3160926U (ja) * | 2010-03-30 | 2010-07-15 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2013201830A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | プラントの非常用電力供給装置及び方法 |
-
2012
- 2012-10-05 JP JP2012222863A patent/JP5951438B2/ja active Active
-
2013
- 2013-01-08 TW TW102100529A patent/TWI492309B/zh active
- 2013-02-18 KR KR1020130016932A patent/KR101429387B1/ko active IP Right Grant
- 2013-02-28 CN CN201610228229.XA patent/CN105758203B/zh active Active
- 2013-02-28 CN CN201310064393.8A patent/CN103712465B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102593936A (zh) * | 2012-02-20 | 2012-07-18 | 海尔集团公司 | 一种太阳能与市电互补式制冷供电系统 |
Also Published As
Publication number | Publication date |
---|---|
JP2014074559A (ja) | 2014-04-24 |
KR20140044723A (ko) | 2014-04-15 |
CN103712465A (zh) | 2014-04-09 |
JP5951438B2 (ja) | 2016-07-13 |
TWI492309B (zh) | 2015-07-11 |
CN103712465B (zh) | 2016-04-20 |
KR101429387B1 (ko) | 2014-08-11 |
TW201415556A (zh) | 2014-04-16 |
CN105758203A (zh) | 2016-07-13 |
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GR01 | Patent grant |