JP5951438B2 - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP5951438B2 JP5951438B2 JP2012222863A JP2012222863A JP5951438B2 JP 5951438 B2 JP5951438 B2 JP 5951438B2 JP 2012222863 A JP2012222863 A JP 2012222863A JP 2012222863 A JP2012222863 A JP 2012222863A JP 5951438 B2 JP5951438 B2 JP 5951438B2
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- heat treatment
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- furnace
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- 238000010438 heat treatment Methods 0.000 title claims description 121
- 238000006243 chemical reaction Methods 0.000 claims description 73
- 230000005856 abnormality Effects 0.000 claims description 30
- 238000012545 processing Methods 0.000 claims description 21
- 230000004308 accommodation Effects 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D17/00—Arrangements for using waste heat; Arrangements for using, or disposing of, waste gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Environmental & Geological Engineering (AREA)
- Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
- Furnace Details (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
(1)上述の実施形態では、熱電変換部材3として、ペルチェ素子を用いる構成を説明したけれども、この通りでなくてもよい。熱電変換部材は、熱エネルギーを電力に変換できる構成を有していればよい。例えば、熱電変換部材として、熱処理炉2の熱を受けるボイラと、タービンと、発電機と、を含む構成を採用してもよい。この場合、ボイラで蒸気を発生させ、この蒸気でタービンを回転させることとなる。タービンに接続された発電機の回転によって電力が発生する。この電力は、熱電変換部材からの電力として扱われる。
2 熱処理炉
3,3A 熱電変換部材
4 制御装置
5 切替部
14 排気路
17 熱処理炉の壁部
20 外部電源
21 弁(補助機器)
23 ロック機構(補助機器)
24 計測装置(補助機器)
25 表示装置(補助機器)
100 被処理物
T 熱処理炉の温度
T1 しきい値
Claims (4)
- 被処理物を熱処理するための熱処理炉と、
前記熱処理炉からの熱のエネルギーを電力に変換する変換部材と、
前記熱処理炉を制御するための制御装置と、
外部電源からの電力と、前記変換部材からの電力とを、択一的に前記制御装置へ供給するための切替部と、
を備え、
前記切替部は、
前記熱処理炉の温度が所定のしきい値未満である場合、前記外部電源からの電力を前記制御装置へ供給するように構成され、且つ、
前記熱処理炉の温度が前記しきい値以上である場合、前記変換部材からの電力を前記制御装置へ供給するように構成されていることを特徴とする、熱処理装置。 - 請求項1に記載の熱処理装置であって、
前記切替部は、前記外部電源に異常が生じている場合には、前記変換部材からの電力を、前記制御装置へ供給可能であることを特徴とする、熱処理装置。 - 請求項1又は請求項2に記載の熱処理装置であって、
前記制御装置によって制御される補助機器を更に備え、
前記補助機器は、前記変換部材からの電力によって動作可能であることを特徴とする、熱処理装置。 - 請求項1〜請求項3の何れか1項に記載の熱処理装置であって、
前記変換部材は、前記熱処理炉に設けられた排気路、及び前記熱処理炉の壁部の少なくとも一方に取り付けられていることを特徴とする、熱処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012222863A JP5951438B2 (ja) | 2012-10-05 | 2012-10-05 | 熱処理装置 |
TW102100529A TWI492309B (zh) | 2012-10-05 | 2013-01-08 | Heat treatment device |
KR1020130016932A KR101429387B1 (ko) | 2012-10-05 | 2013-02-18 | 열처리 장치 |
CN201610228229.XA CN105758203B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
CN201310064393.8A CN103712465B (zh) | 2012-10-05 | 2013-02-28 | 热处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012222863A JP5951438B2 (ja) | 2012-10-05 | 2012-10-05 | 熱処理装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014074559A JP2014074559A (ja) | 2014-04-24 |
JP2014074559A5 JP2014074559A5 (ja) | 2015-07-02 |
JP5951438B2 true JP5951438B2 (ja) | 2016-07-13 |
Family
ID=50405637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012222863A Active JP5951438B2 (ja) | 2012-10-05 | 2012-10-05 | 熱処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5951438B2 (ja) |
KR (1) | KR101429387B1 (ja) |
CN (2) | CN105758203B (ja) |
TW (1) | TWI492309B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6442339B2 (ja) | 2015-03-26 | 2018-12-19 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6498060B2 (ja) * | 2015-07-01 | 2019-04-10 | 中外炉工業株式会社 | 工業炉の制御方法 |
KR102295852B1 (ko) * | 2018-06-21 | 2021-08-31 | 한국전기연구원 | 다기능 축열 열전하이브리드 발전장치 |
JP6925377B2 (ja) * | 2019-03-12 | 2021-08-25 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
CN111706843B (zh) * | 2020-07-01 | 2021-01-15 | 海南鸣川智能科技有限公司 | 一种可将热能进行多级回收利用的船舶用尾气处理装置 |
JP2022049287A (ja) * | 2020-09-16 | 2022-03-29 | 高砂工業株式会社 | 熱処理炉および熱処理設備 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0545067A (ja) * | 1991-08-08 | 1993-02-23 | Toshiba Corp | 溶解炉装置 |
JPH06154589A (ja) * | 1992-11-20 | 1994-06-03 | Kubota Corp | エネルギー回収型の断熱容器 |
JP2000068183A (ja) * | 1998-08-19 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | 基板加熱処理装置ならびに基板加熱処理装置の熱エネルギー変換方法および熱エネルギー回収方法 |
JP4178746B2 (ja) * | 2000-12-04 | 2008-11-12 | 株式会社Ihi | 工業炉用熱電発電装置 |
JP4742431B2 (ja) | 2001-02-27 | 2011-08-10 | 東京エレクトロン株式会社 | 熱処理装置 |
JP3856293B2 (ja) * | 2001-10-17 | 2006-12-13 | 日本碍子株式会社 | 加熱装置 |
JP2004350479A (ja) * | 2003-05-26 | 2004-12-09 | Hitachi Powdered Metals Co Ltd | 熱電変換発電ユニットおよびこの熱電変換発電ユニットを備えるトンネル型炉 |
JP4661235B2 (ja) * | 2005-01-27 | 2011-03-30 | 株式会社Ihi | 熱電変換装置 |
JP4808425B2 (ja) | 2005-03-22 | 2011-11-02 | 光洋サーモシステム株式会社 | 熱処理装置 |
JP5087875B2 (ja) * | 2006-07-31 | 2012-12-05 | 株式会社Ihi | 熱処理装置 |
JP5040213B2 (ja) * | 2006-08-15 | 2012-10-03 | 東京エレクトロン株式会社 | 熱処理装置、熱処理方法及び記憶媒体 |
US8260166B2 (en) * | 2007-05-24 | 2012-09-04 | Ricoh Company, Limited | Image forming apparatus and electric appliance including a thermoelectric element |
CN101650068B (zh) * | 2008-08-12 | 2012-05-02 | 广东万和新电气股份有限公司 | 带有热电转换装置自供电的强排燃气热水器 |
CN201561547U (zh) * | 2009-05-04 | 2010-08-25 | 广州市红日燃具有限公司 | 一种带自供电装置的燃气热水器 |
JP2011129827A (ja) | 2009-12-21 | 2011-06-30 | Sharp Corp | 太陽電池システム |
RU2012137692A (ru) * | 2010-03-10 | 2014-04-20 | БиЭйчПи БИЛЛИТОН ЭЛЮМИНИУМ ТЕКНОЛОДЖИС ЛИМИТЕД | Система регенерации тепла для пирометаллургического сосуда с применением термоэлектрических/термомагнитных устройств |
JP3160926U (ja) * | 2010-03-30 | 2010-07-15 | 東京エレクトロン株式会社 | 熱処理装置 |
CN102593936B (zh) * | 2012-02-20 | 2015-10-28 | 海尔集团公司 | 一种太阳能与市电互补式制冷供电系统 |
JP2013201830A (ja) * | 2012-03-26 | 2013-10-03 | Toshiba Corp | プラントの非常用電力供給装置及び方法 |
-
2012
- 2012-10-05 JP JP2012222863A patent/JP5951438B2/ja active Active
-
2013
- 2013-01-08 TW TW102100529A patent/TWI492309B/zh active
- 2013-02-18 KR KR1020130016932A patent/KR101429387B1/ko active IP Right Grant
- 2013-02-28 CN CN201610228229.XA patent/CN105758203B/zh active Active
- 2013-02-28 CN CN201310064393.8A patent/CN103712465B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014074559A (ja) | 2014-04-24 |
KR20140044723A (ko) | 2014-04-15 |
CN103712465A (zh) | 2014-04-09 |
CN105758203B (zh) | 2019-01-01 |
TWI492309B (zh) | 2015-07-11 |
CN103712465B (zh) | 2016-04-20 |
KR101429387B1 (ko) | 2014-08-11 |
TW201415556A (zh) | 2014-04-16 |
CN105758203A (zh) | 2016-07-13 |
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