CN105609407B - 用于形成半导体器件的方法和半导体器件 - Google Patents
用于形成半导体器件的方法和半导体器件 Download PDFInfo
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- CN105609407B CN105609407B CN201510776583.1A CN201510776583A CN105609407B CN 105609407 B CN105609407 B CN 105609407B CN 201510776583 A CN201510776583 A CN 201510776583A CN 105609407 B CN105609407 B CN 105609407B
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- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
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- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
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- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014116666.3A DE102014116666B4 (de) | 2014-11-14 | 2014-11-14 | Ein Verfahren zum Bilden eines Halbleiterbauelements |
| DE102014116666.3 | 2014-11-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105609407A CN105609407A (zh) | 2016-05-25 |
| CN105609407B true CN105609407B (zh) | 2019-04-30 |
Family
ID=55855294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510776583.1A Active CN105609407B (zh) | 2014-11-14 | 2015-11-13 | 用于形成半导体器件的方法和半导体器件 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9972704B2 (enExample) |
| JP (3) | JP6619210B2 (enExample) |
| CN (1) | CN105609407B (enExample) |
| DE (1) | DE102014116666B4 (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112015000206T5 (de) | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
| DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
| WO2018060679A1 (en) * | 2016-09-30 | 2018-04-05 | Anvil Semiconductors Limited | 3c-sic igbt |
| JP6646876B2 (ja) * | 2016-12-15 | 2020-02-14 | 信越半導体株式会社 | シリコン結晶の炭素濃度測定方法 |
| JP7045005B2 (ja) * | 2017-05-19 | 2022-03-31 | 学校法人東北学院 | 半導体装置 |
| JP7052322B2 (ja) | 2017-11-28 | 2022-04-12 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| DE112019000094T5 (de) | 2018-03-19 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung |
| JP6645546B1 (ja) * | 2018-09-03 | 2020-02-14 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| DE112019001123B4 (de) | 2018-10-18 | 2024-03-28 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren davon |
| JP7099541B2 (ja) * | 2018-11-16 | 2022-07-12 | 富士電機株式会社 | 半導体装置および製造方法 |
| CN112055887B (zh) | 2018-11-16 | 2024-06-25 | 富士电机株式会社 | 半导体装置及制造方法 |
| DE102018132236B4 (de) * | 2018-12-14 | 2023-04-27 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
| CN112204710B (zh) | 2018-12-28 | 2024-07-09 | 富士电机株式会社 | 半导体装置及制造方法 |
| JP7173312B2 (ja) | 2019-05-16 | 2022-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN113544857B (zh) | 2019-09-11 | 2024-08-13 | 富士电机株式会社 | 半导体装置以及制造方法 |
| JP7363336B2 (ja) * | 2019-10-11 | 2023-10-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE112020001029B4 (de) | 2019-10-11 | 2025-06-05 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung |
| DE112020001043T5 (de) | 2019-10-11 | 2021-12-23 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung |
| JP6981582B2 (ja) | 2019-12-17 | 2021-12-15 | 富士電機株式会社 | 半導体装置 |
| WO2021125064A1 (ja) | 2019-12-18 | 2021-06-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN114175270A (zh) | 2020-02-18 | 2022-03-11 | 富士电机株式会社 | 半导体装置 |
| JP7361634B2 (ja) * | 2020-03-02 | 2023-10-16 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| DE112021000082T5 (de) | 2020-03-04 | 2022-04-21 | Fuji Electric Co., Ltd. | Halbleitervorrichtung, verfahren zur herstellung einer halbleitervorrichtung und leistungsumwandlungsvorrichtung mit einer halbleitervorrichtung |
| CN115280472B (zh) * | 2020-03-17 | 2025-07-25 | 信越半导体株式会社 | 单晶硅基板中的施主浓度的控制方法 |
| JP7264100B2 (ja) * | 2020-04-02 | 2023-04-25 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
| CN115443541A (zh) * | 2020-11-17 | 2022-12-06 | 富士电机株式会社 | 半导体装置 |
| US12437659B2 (en) | 2020-12-23 | 2025-10-07 | Yamaha Motor Corporation, Usa | Aircraft auto landing system |
| JP7652341B2 (ja) | 2022-05-30 | 2025-03-27 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2024014333A (ja) * | 2022-07-22 | 2024-02-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE112023002207T5 (de) | 2022-12-13 | 2025-03-13 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
| DE112024000321T5 (de) * | 2023-08-01 | 2025-11-13 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| JPWO2025084305A1 (enExample) * | 2023-10-17 | 2025-04-24 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715072A (zh) * | 2012-10-08 | 2014-04-09 | 英飞凌科技股份有限公司 | 用于生产半导体器件的方法和场效应半导体器件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526074B1 (enExample) | 1971-06-04 | 1977-02-18 | ||
| JPS4888882A (enExample) * | 1972-02-22 | 1973-11-21 | ||
| GB0130018D0 (en) | 2001-12-15 | 2002-02-06 | Koninkl Philips Electronics Nv | Semiconductor devices and their manufacture |
| DE102004004045B4 (de) * | 2004-01-27 | 2009-04-02 | Infineon Technologies Ag | Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung |
| JP4595450B2 (ja) * | 2004-09-02 | 2010-12-08 | 信越半導体株式会社 | 炭素ドープシリコン単結晶の製造方法 |
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| US20160141399A1 (en) | 2016-05-19 |
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| US20180102423A1 (en) | 2018-04-12 |
| CN105609407A (zh) | 2016-05-25 |
| US10529838B2 (en) | 2020-01-07 |
| JP7140860B2 (ja) | 2022-09-21 |
| JP2017228783A (ja) | 2017-12-28 |
| JP6619210B2 (ja) | 2019-12-11 |
| DE102014116666A1 (de) | 2016-05-19 |
| JP6835682B2 (ja) | 2021-02-24 |
| JP2021082829A (ja) | 2021-05-27 |
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| DE102014116666B4 (de) | 2022-04-21 |
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