CN105609407B - 用于形成半导体器件的方法和半导体器件 - Google Patents
用于形成半导体器件的方法和半导体器件 Download PDFInfo
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- CN105609407B CN105609407B CN201510776583.1A CN201510776583A CN105609407B CN 105609407 B CN105609407 B CN 105609407B CN 201510776583 A CN201510776583 A CN 201510776583A CN 105609407 B CN105609407 B CN 105609407B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
- H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
- H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102014116666.3A DE102014116666B4 (de) | 2014-11-14 | 2014-11-14 | Ein Verfahren zum Bilden eines Halbleiterbauelements |
| DE102014116666.3 | 2014-11-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105609407A CN105609407A (zh) | 2016-05-25 |
| CN105609407B true CN105609407B (zh) | 2019-04-30 |
Family
ID=55855294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510776583.1A Active CN105609407B (zh) | 2014-11-14 | 2015-11-13 | 用于形成半导体器件的方法和半导体器件 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9972704B2 (enExample) |
| JP (3) | JP6619210B2 (enExample) |
| CN (1) | CN105609407B (enExample) |
| DE (1) | DE102014116666B4 (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105814694B (zh) | 2014-10-03 | 2019-03-08 | 富士电机株式会社 | 半导体装置以及半导体装置的制造方法 |
| DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
| WO2018060679A1 (en) * | 2016-09-30 | 2018-04-05 | Anvil Semiconductors Limited | 3c-sic igbt |
| JP6646876B2 (ja) * | 2016-12-15 | 2020-02-14 | 信越半導体株式会社 | シリコン結晶の炭素濃度測定方法 |
| JP7045005B2 (ja) * | 2017-05-19 | 2022-03-31 | 学校法人東北学院 | 半導体装置 |
| JP7052322B2 (ja) | 2017-11-28 | 2022-04-12 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| JP6835291B2 (ja) | 2018-03-19 | 2021-02-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6645546B1 (ja) * | 2018-09-03 | 2020-02-14 | 株式会社Sumco | シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法 |
| WO2020080295A1 (ja) | 2018-10-18 | 2020-04-23 | 富士電機株式会社 | 半導体装置および製造方法 |
| JP7099541B2 (ja) * | 2018-11-16 | 2022-07-12 | 富士電機株式会社 | 半導体装置および製造方法 |
| DE112019001738B4 (de) | 2018-11-16 | 2024-10-10 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren |
| DE102018132236B4 (de) * | 2018-12-14 | 2023-04-27 | Infineon Technologies Ag | Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung |
| CN112204710B (zh) | 2018-12-28 | 2024-07-09 | 富士电机株式会社 | 半导体装置及制造方法 |
| JP7173312B2 (ja) | 2019-05-16 | 2022-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2021049499A1 (ja) | 2019-09-11 | 2021-03-18 | 富士電機株式会社 | 半導体装置および製造方法 |
| WO2021070584A1 (ja) | 2019-10-11 | 2021-04-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN113711364B (zh) | 2019-10-11 | 2025-07-15 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
| JP7363336B2 (ja) * | 2019-10-11 | 2023-10-18 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE112020002227T5 (de) | 2019-12-17 | 2022-02-17 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| CN113892184B (zh) * | 2019-12-18 | 2025-02-25 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
| WO2021166980A1 (ja) | 2020-02-18 | 2021-08-26 | 富士電機株式会社 | 半導体装置 |
| JP7361634B2 (ja) * | 2020-03-02 | 2023-10-16 | 三菱電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP7323049B2 (ja) | 2020-03-04 | 2023-08-08 | 富士電機株式会社 | 半導体装置および半導体装置を備えた電力変換装置 |
| WO2021186944A1 (ja) * | 2020-03-17 | 2021-09-23 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
| JP7264100B2 (ja) * | 2020-04-02 | 2023-04-25 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
| DE112021001364B4 (de) * | 2020-11-17 | 2025-11-20 | Fuji Electric Co., Ltd. | Halbleitervorrichtung |
| US12437659B2 (en) | 2020-12-23 | 2025-10-07 | Yamaha Motor Corporation, Usa | Aircraft auto landing system |
| JP7683287B2 (ja) | 2021-04-08 | 2025-05-27 | 富士電機株式会社 | 半導体装置および製造方法 |
| WO2023233802A1 (ja) | 2022-05-30 | 2023-12-07 | 富士電機株式会社 | 半導体装置の製造方法 |
| JP2024014333A (ja) * | 2022-07-22 | 2024-02-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| DE112023002207T5 (de) | 2022-12-13 | 2025-03-13 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Herstellungsverfahren einer Halbleitervorrichtung |
| JPWO2025028573A1 (enExample) * | 2023-08-01 | 2025-02-06 | ||
| JPWO2025084305A1 (enExample) * | 2023-10-17 | 2025-04-24 |
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| CN103715072A (zh) * | 2012-10-08 | 2014-04-09 | 英飞凌科技股份有限公司 | 用于生产半导体器件的方法和场效应半导体器件 |
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| JP4595450B2 (ja) * | 2004-09-02 | 2010-12-08 | 信越半導体株式会社 | 炭素ドープシリコン単結晶の製造方法 |
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| US8946811B2 (en) | 2006-07-10 | 2015-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Body-tied, strained-channel multi-gate device and methods of manufacturing same |
| JP5155536B2 (ja) * | 2006-07-28 | 2013-03-06 | 一般財団法人電力中央研究所 | ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法 |
| JP5127235B2 (ja) | 2007-01-10 | 2013-01-23 | 株式会社豊田中央研究所 | 半導体装置の製造方法 |
| JP2008177296A (ja) | 2007-01-17 | 2008-07-31 | Toyota Central R&D Labs Inc | 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法 |
| JP5320679B2 (ja) | 2007-02-28 | 2013-10-23 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| JP2009141304A (ja) | 2007-11-13 | 2009-06-25 | Toyota Motor Corp | 半導体装置とその製造方法 |
| JP5374883B2 (ja) | 2008-02-08 | 2013-12-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
| CN101970260B (zh) * | 2008-03-26 | 2013-11-13 | 东京座椅技术股份有限公司 | 车用收起座椅 |
| JP2010034330A (ja) | 2008-07-29 | 2010-02-12 | Sumco Corp | エピタキシャルウェーハおよびその製造方法 |
| WO2011125305A1 (ja) | 2010-04-08 | 2011-10-13 | 信越半導体株式会社 | シリコンエピタキシャルウエーハ、シリコンエピタキシャルウエーハの製造方法、及び半導体素子又は集積回路の製造方法 |
| DE102011003439B4 (de) | 2011-02-01 | 2014-03-06 | Globalfoundries Dresden Module One Llc & Co. Kg | Verfahren zur Durchlassstromerhöhung in Feldeffekttransistoren durch asymmetrische Konzentrationsprofile von Legierungssubstanzen einer Kanalhalbleiterlegierung und Halbleiterbauelement |
| GB201114365D0 (en) | 2011-08-22 | 2011-10-05 | Univ Surrey | Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method |
| CN104040692B (zh) | 2012-03-19 | 2016-11-09 | 富士电机株式会社 | 半导体装置的制造方法 |
| JP6020342B2 (ja) | 2013-05-10 | 2016-11-02 | 信越半導体株式会社 | シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法 |
| JP6271309B2 (ja) * | 2014-03-19 | 2018-01-31 | 株式会社東芝 | 半導体基板の製造方法、半導体基板および半導体装置 |
| JP6415946B2 (ja) * | 2014-11-26 | 2018-10-31 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
| DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
-
2014
- 2014-11-14 DE DE102014116666.3A patent/DE102014116666B4/de active Active
-
2015
- 2015-11-09 US US14/935,830 patent/US9972704B2/en active Active
- 2015-11-12 JP JP2015221920A patent/JP6619210B2/ja active Active
- 2015-11-13 CN CN201510776583.1A patent/CN105609407B/zh active Active
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2017
- 2017-08-04 JP JP2017151202A patent/JP6835682B2/ja active Active
- 2017-12-04 US US15/831,247 patent/US10529838B2/en active Active
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2021
- 2021-02-04 JP JP2021016333A patent/JP7140860B2/ja active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715072A (zh) * | 2012-10-08 | 2014-04-09 | 英飞凌科技股份有限公司 | 用于生产半导体器件的方法和场效应半导体器件 |
Non-Patent Citations (2)
| Title |
|---|
| Interstitial carbon reactions in n-Si induced by high-energy proton inrradiation;K. Kono et al;《Physica B》;20011231(第308-310期);第265-267页 |
| The annealing of interstitial carbon atoms in high resistivity n-type silicon after proton irradiation;M. Kuhnke et al;《Nuclear Inst & Method in physics Research A》;20020630(第485期);正文第140-145页 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021082829A (ja) | 2021-05-27 |
| US20180102423A1 (en) | 2018-04-12 |
| US9972704B2 (en) | 2018-05-15 |
| JP7140860B2 (ja) | 2022-09-21 |
| CN105609407A (zh) | 2016-05-25 |
| DE102014116666A1 (de) | 2016-05-19 |
| DE102014116666B4 (de) | 2022-04-21 |
| JP2016096338A (ja) | 2016-05-26 |
| JP6619210B2 (ja) | 2019-12-11 |
| US20160141399A1 (en) | 2016-05-19 |
| JP6835682B2 (ja) | 2021-02-24 |
| JP2017228783A (ja) | 2017-12-28 |
| US10529838B2 (en) | 2020-01-07 |
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