JP7323049B2 - 半導体装置および半導体装置を備えた電力変換装置 - Google Patents
半導体装置および半導体装置を備えた電力変換装置 Download PDFInfo
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- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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Description
特許文献1 WO2016/204126号
Claims (16)
- 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面に近く、前記深さ方向において前記下面から5μm以上の距離に配置されており、前記第1濃度ピークよりもドーピング濃度が低く、且つ、前記ドーピング濃度が1.0×1015/cm3未満である第2濃度ピークと、
前記第2濃度ピークよりも前記下面から離れて配置され、前記第2濃度ピークよりも前記ドーピング濃度が高い高濃度ピークとを含み、
前記第2濃度ピークの半値全幅が、他のいずれかの前記濃度ピークの半値全幅よりも大きい
半導体装置。 - 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面に近く、前記深さ方向において前記下面から5μm以上の距離に配置されており、前記第1濃度ピークよりもドーピング濃度が低く、且つ、前記ドーピング濃度が1.0×10 15 /cm 3 未満である第2濃度ピークと、
前記第2濃度ピークよりも前記下面から離れて配置され、前記第2濃度ピークよりも前記ドーピング濃度が高い高濃度ピークとを含み、
前記高濃度ピークの半値全幅が、前記第1濃度ピークの半値全幅の2倍以上である
半導体装置。 - 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面に近く、前記深さ方向において前記下面から5μm以上の距離に配置されており、前記第1濃度ピークよりもドーピング濃度が低く、且つ、前記ドーピング濃度が1.0×10 15 /cm 3 未満である第2濃度ピークと、
前記第2濃度ピークよりも前記下面から離れて配置され、前記第2濃度ピークよりも前記ドーピング濃度が高い高濃度ピークとを含み、
前記第2濃度ピークの半値全幅が、前記第1濃度ピークの半値全幅の2倍以上である
半導体装置。 - 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面に近く、前記深さ方向において前記下面から5μm以上の距離に配置されており、前記第1濃度ピークよりもドーピング濃度が低く、且つ、前記ドーピング濃度が1.0×10 15 /cm 3 未満である第2濃度ピークと、
前記第2濃度ピークよりも前記下面から離れて配置され、前記第2濃度ピークよりも前記ドーピング濃度が高い高濃度ピークとを含み、
前記バッファ領域における3個以上の前記濃度ピークは、前記第2濃度ピークと前記高濃度ピークとの間に配置された第3濃度ピークを含み、
前記第3濃度ピークの半値全幅が、前記第1濃度ピークの半値全幅の2倍以上である
半導体装置。 - 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面に近く、前記深さ方向において前記下面から5μm以上の距離に配置されており、前記第1濃度ピークよりもドーピング濃度が低く、且つ、前記ドーピング濃度が1.0×10 15 /cm 3 未満である第2濃度ピークと、
前記第2濃度ピークよりも前記下面から離れて配置され、前記第2濃度ピークよりも前記ドーピング濃度が高い高濃度ピークとを含み、
前記高濃度ピークは、前記ドーピング濃度が極大値を示す深さ位置を含んで、前記深さ方向における前記ドーピング濃度分布が平坦な平坦部分を有する
半導体装置。 - 前記バッファ領域は、それぞれの前記濃度ピークの間に、前記ドーピング濃度が極小値となる谷部を有し、
それぞれの前記谷部の前記ドーピング濃度が、2.0×1014/cm3以上、5.0×1014/cm3以下である
請求項1から5のいずれか一項に記載の半導体装置。 - 前記コレクタ領域における第2導電型のドーパントのドーズ量が、8×1012/cm2以下である
請求項1から6のいずれか一項に記載の半導体装置。 - 前記第1濃度ピークの前記ドーピング濃度が、前記コレクタ領域の前記ドーピング濃度の0.1倍以上、10倍以下である
請求項1から7のいずれか一項に記載の半導体装置。 - 前記第2濃度ピークの半値全幅が、前記高濃度ピークの半値全幅よりも大きい
請求項1に記載の半導体装置。 - 前記第2濃度ピークの半値全幅が、他のいずれの濃度ピークの半値全幅よりも大きい
請求項1に記載の半導体装置。 - 前記第3濃度ピークは、前記ドーピング濃度が極大値を示す深さ位置を含んで、前記深さ方向における前記ドーピング濃度分布が平坦な平坦部分を有する
請求項4に記載の半導体装置。 - 上面および下面を有し、第1導電型のドリフト領域が設けられた半導体基板と、
前記ドリフト領域と前記下面との間に配置され、前記半導体基板の深さ方向におけるドーピング濃度分布が3個以上の濃度ピークを有する、第1導電型のバッファ領域と、
前記バッファ領域と前記下面との間に配置された第2導電型のコレクタ領域と
を備え、
前記バッファ領域における3個以上の前記濃度ピークは、
前記下面に最も近い第1濃度ピークと、
前記第1濃度ピークの次に前記下面の近くに配置された第2濃度ピークと、
前記第2濃度ピークよりも前記上面の近くに配置された上面側濃度ピークと
を含み、
前記第2濃度ピークの半値全幅が、前記上面側濃度ピークの半値全幅よりも大きい半導体装置。 - 前記上面側濃度ピークは、前記3個以上の前記濃度ピークのうち、前記上面に最も近くに配置されている
請求項12に記載の半導体装置。 - 前記上面側濃度ピークは、前記第2濃度ピークの次に前記下面の近くに配置されている
請求項12に記載の半導体装置。 - 前記第2濃度ピークの半値全幅が、他のいずれの濃度ピークの半値全幅よりも大きい
請求項12に記載の半導体装置。 - キャリア周波数が10kHz以上である
請求項1から15のいずれか一項に記載の半導体装置を備えた電力変換装置。
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