JP7476996B2 - 半導体装置 - Google Patents
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- JP7476996B2 JP7476996B2 JP2023015355A JP2023015355A JP7476996B2 JP 7476996 B2 JP7476996 B2 JP 7476996B2 JP 2023015355 A JP2023015355 A JP 2023015355A JP 2023015355 A JP2023015355 A JP 2023015355A JP 7476996 B2 JP7476996 B2 JP 7476996B2
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 198
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- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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Description
[先行技術文献]
[特許文献]
[特許文献1] 特許第5374883号
[特許文献2] WO2017/47285号
Claims (10)
- 上面および下面を有し、バルク・ドナーを有する半導体基板を備え、
前記半導体基板の深さ方向における水素化学濃度分布が、第1の水素濃度ピークと、前記第1の水素濃度ピークよりも前記半導体基板の前記下面側に配置された第2の水素濃度ピークとを有し、
前記第1の水素濃度ピークと前記第2の水素濃度ピークとの間の中間領域における中間ドナー濃度が、前記第1の水素濃度ピークと前記半導体基板の前記上面との間の上面側ドナー濃度と、前記第2の水素濃度ピークと前記半導体基板の前記下面との間の下面側ドナー濃度のいずれより低い
半導体装置。 - 前記半導体基板の深さ方向におけるドナー濃度分布が、前記第1の水素濃度ピークと前記半導体基板の前記上面との間において上面側平坦部分を有する
請求項1に記載の半導体装置。 - 上面および下面を有し、バルク・ドナーを有する半導体基板を備え、
前記半導体基板の深さ方向における水素化学濃度分布が、第1の水素濃度ピークと、前記第1の水素濃度ピークよりも前記半導体基板の前記下面側に配置された第2の水素濃度ピークとを有し、
前記第1の水素濃度ピークと前記第2の水素濃度ピークとの間の中間領域における中間ドナー濃度が、前記第1の水素濃度ピークと前記半導体基板の前記上面との間の上面側ドナー濃度と、前記第2の水素濃度ピークと前記半導体基板の前記下面との間の下面側ドナー濃度のいずれよりも高く、
前記半導体基板の深さ方向におけるドナー濃度分布が、前記第1の水素濃度ピークと前記半導体基板の前記上面との間において上面側平坦部分を有する
半導体装置。 - 前記上面側ドナー濃度は、バルク・ドナー濃度よりも高い
請求項1から3のいずれか一項に記載の半導体装置。 - 前記上面側ドナー濃度は、水素ドナーを含む
請求項1から4のいずれか一項に記載の半導体装置。 - 前記下面側ドナー濃度は、バルク・ドナー濃度よりも高い
請求項1から5のいずれか一項に記載の半導体装置。 - 前記下面側ドナー濃度は、水素ドナーを含む
請求項1から6のいずれか一項に記載の半導体装置。 - 前記半導体基板の深さ方向におけるドナー濃度分布が、前記第2の水素濃度ピークと前記半導体基板の前記下面との間において下面側平坦部分を有する
請求項1から7のいずれか一項に記載の半導体装置。 - 前記中間領域の前記中間ドナー濃度の分布が平坦部分を有する
請求項1から8のいずれか一項に記載の半導体装置。 - 前記中間領域の前記中間ドナー濃度は前記バルク・ドナーのドナー濃度と同一である
請求項1または2に記載の半導体装置。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019187787 | 2019-10-11 | ||
JP2019187787 | 2019-10-11 | ||
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