JP6619210B2 - 半導体装置を形成する方法および半導体装置 - Google Patents

半導体装置を形成する方法および半導体装置 Download PDF

Info

Publication number
JP6619210B2
JP6619210B2 JP2015221920A JP2015221920A JP6619210B2 JP 6619210 B2 JP6619210 B2 JP 6619210B2 JP 2015221920 A JP2015221920 A JP 2015221920A JP 2015221920 A JP2015221920 A JP 2015221920A JP 6619210 B2 JP6619210 B2 JP 6619210B2
Authority
JP
Japan
Prior art keywords
carbon
semiconductor substrate
protons
concentration
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015221920A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016096338A (ja
Inventor
シュルツェ，　ハンス−ヨアヒム
ハンス−ヨアヒム シュルツェ，
モーリッツ イェリネク，
モーリッツ イェリネク，
ヨハネス ゲオルク ラヴェン，
ヨハネス ゲオルク ラヴェン，
ヘルムート エーフナー，
ヘルムート エーフナー，
ヴェルナー シュスターレダー，
ヴェルナー シュスターレダー，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of JP2016096338A publication Critical patent/JP2016096338A/ja
Application granted granted Critical
Publication of JP6619210B2 publication Critical patent/JP6619210B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2015221920A 2014-11-14 2015-11-12 半導体装置を形成する方法および半導体装置 Active JP6619210B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014116666.3 2014-11-14
DE102014116666.3A DE102014116666B4 (de) 2014-11-14 2014-11-14 Ein Verfahren zum Bilden eines Halbleiterbauelements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017151202A Division JP6835682B2 (ja) 2014-11-14 2017-08-04 半導体装置を形成する方法および半導体装置

Publications (2)

Publication Number Publication Date
JP2016096338A JP2016096338A (ja) 2016-05-26
JP6619210B2 true JP6619210B2 (ja) 2019-12-11

Family

ID=55855294

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2015221920A Active JP6619210B2 (ja) 2014-11-14 2015-11-12 半導体装置を形成する方法および半導体装置
JP2017151202A Active JP6835682B2 (ja) 2014-11-14 2017-08-04 半導体装置を形成する方法および半導体装置
JP2021016333A Active JP7140860B2 (ja) 2014-11-14 2021-02-04 半導体装置を形成する方法および半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2017151202A Active JP6835682B2 (ja) 2014-11-14 2017-08-04 半導体装置を形成する方法および半導体装置
JP2021016333A Active JP7140860B2 (ja) 2014-11-14 2021-02-04 半導体装置を形成する方法および半導体装置

Country Status (4)

Country Link
US (2) US9972704B2 (enExample)
JP (3) JP6619210B2 (enExample)
CN (1) CN105609407B (enExample)
DE (1) DE102014116666B4 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6319453B2 (ja) 2014-10-03 2018-05-09 富士電機株式会社 半導体装置および半導体装置の製造方法
DE102016112139B3 (de) * 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper
WO2018060679A1 (en) * 2016-09-30 2018-04-05 Anvil Semiconductors Limited 3c-sic igbt
JP6646876B2 (ja) * 2016-12-15 2020-02-14 信越半導体株式会社 シリコン結晶の炭素濃度測定方法
JP7045005B2 (ja) * 2017-05-19 2022-03-31 学校法人東北学院 半導体装置
JP7052322B2 (ja) 2017-11-28 2022-04-12 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE112019000094T5 (de) 2018-03-19 2020-09-24 Fuji Electric Co., Ltd. Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung
JP6645546B1 (ja) * 2018-09-03 2020-02-14 株式会社Sumco シリコン試料の炭素濃度評価方法、シリコンウェーハ製造工程の評価方法、シリコンウェーハの製造方法およびシリコン単結晶インゴットの製造方法
CN111886682B (zh) 2018-10-18 2025-01-17 富士电机株式会社 半导体装置及制造方法
WO2020100997A1 (ja) 2018-11-16 2020-05-22 富士電機株式会社 半導体装置および製造方法
CN112219263B (zh) 2018-11-16 2024-09-27 富士电机株式会社 半导体装置及制造方法
DE102018132236B4 (de) * 2018-12-14 2023-04-27 Infineon Technologies Ag Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
CN112204710B (zh) 2018-12-28 2024-07-09 富士电机株式会社 半导体装置及制造方法
CN113169123B (zh) 2019-05-16 2025-03-07 富士电机株式会社 半导体装置及半导体装置的制造方法
JP6989061B2 (ja) 2019-09-11 2022-01-05 富士電機株式会社 半導体装置および製造方法
CN113632236B (zh) 2019-10-11 2024-10-18 富士电机株式会社 半导体装置和半导体装置的制造方法
JP7363336B2 (ja) * 2019-10-11 2023-10-18 富士電機株式会社 半導体装置および半導体装置の製造方法
DE112020001029B4 (de) 2019-10-11 2025-06-05 Fuji Electric Co., Ltd. Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
CN113875016B (zh) 2019-12-17 2025-04-22 富士电机株式会社 半导体装置
CN113892184B (zh) * 2019-12-18 2025-02-25 富士电机株式会社 半导体装置和半导体装置的制造方法
JP7279846B2 (ja) 2020-02-18 2023-05-23 富士電機株式会社 半導体装置
JP7361634B2 (ja) * 2020-03-02 2023-10-16 三菱電機株式会社 半導体装置及び半導体装置の製造方法
WO2021177422A1 (ja) 2020-03-04 2021-09-10 富士電機株式会社 半導体装置、半導体装置の製造方法および半導体装置を備えた電力変換装置
WO2021186944A1 (ja) * 2020-03-17 2021-09-23 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
JP7264100B2 (ja) * 2020-04-02 2023-04-25 信越半導体株式会社 シリコン単結晶基板中のドナー濃度の制御方法
WO2022107727A1 (ja) * 2020-11-17 2022-05-27 富士電機株式会社 半導体装置
US12437659B2 (en) 2020-12-23 2025-10-07 Yamaha Motor Corporation, Usa Aircraft auto landing system
WO2023233802A1 (ja) 2022-05-30 2023-12-07 富士電機株式会社 半導体装置の製造方法
JP2024014333A (ja) * 2022-07-22 2024-02-01 富士電機株式会社 半導体装置および半導体装置の製造方法
JPWO2024128072A1 (enExample) 2022-12-13 2024-06-20
DE112024000321T5 (de) * 2023-08-01 2025-11-13 Fuji Electric Co., Ltd. Halbleitervorrichtung
WO2025084305A1 (ja) * 2023-10-17 2025-04-24 富士電機株式会社 半導体基板の評価方法および半導体装置の製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526074B1 (enExample) 1971-06-04 1977-02-18
JPS4888882A (enExample) * 1972-02-22 1973-11-21
GB0130018D0 (en) * 2001-12-15 2002-02-06 Koninkl Philips Electronics Nv Semiconductor devices and their manufacture
DE102004004045B4 (de) * 2004-01-27 2009-04-02 Infineon Technologies Ag Halbleiterbauelement mit temporärem Feldstoppbereich und Verfahren zu dessen Herstellung
JP4595450B2 (ja) * 2004-09-02 2010-12-08 信越半導体株式会社 炭素ドープシリコン単結晶の製造方法
JP4919700B2 (ja) 2005-05-20 2012-04-18 トヨタ自動車株式会社 半導体装置及びその製造方法
WO2007005489A2 (en) * 2005-07-05 2007-01-11 Mattson Technology, Inc. Method and system for determining optical properties of semiconductor wafers
JP4802019B2 (ja) 2006-03-14 2011-10-26 パナソニック株式会社 基板処理装置の温度制御方法、基板処理装置および基板処理システム
US8946811B2 (en) 2006-07-10 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. Body-tied, strained-channel multi-gate device and methods of manufacturing same
JP5155536B2 (ja) * 2006-07-28 2013-03-06 一般財団法人電力中央研究所 ＳｉＣ結晶の質を向上させる方法およびＳｉＣ半導体素子の製造方法
JP5127235B2 (ja) * 2007-01-10 2013-01-23 株式会社豊田中央研究所 半導体装置の製造方法
JP2008177296A (ja) * 2007-01-17 2008-07-31 Toyota Central R&D Labs Inc 半導体装置、ｐｎダイオード、ｉｇｂｔ、及びそれらの製造方法
JP5320679B2 (ja) 2007-02-28 2013-10-23 富士電機株式会社 半導体装置およびその製造方法
JP2009141304A (ja) * 2007-11-13 2009-06-25 Toyota Motor Corp 半導体装置とその製造方法
JP5374883B2 (ja) * 2008-02-08 2013-12-25 富士電機株式会社 半導体装置およびその製造方法
US8465096B2 (en) * 2008-03-26 2013-06-18 Ts Tech Co., Ltd. Stowable vehicle seat
JP2010034330A (ja) 2008-07-29 2010-02-12 Sumco Corp エピタキシャルウェーハおよびその製造方法
WO2011125305A1 (ja) 2010-04-08 2011-10-13 信越半導体株式会社 シリコンエピタキシャルウエーハ、シリコンエピタキシャルウエーハの製造方法、及び半導体素子又は集積回路の製造方法
DE102011003439B4 (de) * 2011-02-01 2014-03-06 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren zur Durchlassstromerhöhung in Feldeffekttransistoren durch asymmetrische Konzentrationsprofile von Legierungssubstanzen einer Kanalhalbleiterlegierung und Halbleiterbauelement
GB201114365D0 (en) 2011-08-22 2011-10-05 Univ Surrey Method of manufacture of an optoelectronic device and an optoelectronic device manufactured using the method
WO2013141141A1 (ja) * 2012-03-19 2013-09-26 富士電機株式会社 半導体装置の製造方法
US9029243B2 (en) 2012-10-08 2015-05-12 Infineon Technologies Ag Method for producing a semiconductor device and field-effect semiconductor device
JP6020342B2 (ja) 2013-05-10 2016-11-02 信越半導体株式会社 シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
JP6271309B2 (ja) * 2014-03-19 2018-01-31 株式会社東芝 半導体基板の製造方法、半導体基板および半導体装置
JP6415946B2 (ja) * 2014-11-26 2018-10-31 株式会社東芝 半導体装置の製造方法及び半導体装置
DE102016112139B3 (de) * 2016-07-01 2018-01-04 Infineon Technologies Ag Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper

Also Published As

Publication number Publication date
US10529838B2 (en) 2020-01-07
CN105609407A (zh) 2016-05-25
US9972704B2 (en) 2018-05-15
CN105609407B (zh) 2019-04-30
US20180102423A1 (en) 2018-04-12
JP2017228783A (ja) 2017-12-28
DE102014116666A1 (de) 2016-05-19
JP2021082829A (ja) 2021-05-27
JP6835682B2 (ja) 2021-02-24
JP7140860B2 (ja) 2022-09-21
US20160141399A1 (en) 2016-05-19
DE102014116666B4 (de) 2022-04-21
JP2016096338A (ja) 2016-05-26

Similar Documents

Publication Publication Date Title
JP6619210B2 (ja) 半導体装置を形成する方法および半導体装置
JP2017228783A5 (enExample)
JP6100307B2 (ja) 半導体デバイスを形成するための方法および半導体デバイス
US12368048B2 (en) Semiconductor device and method for manufacturing
CN102737967B (zh) 具有硫族元素掺杂区域的衬底和半导体器件
US7754589B2 (en) Method for improving the quality of a SiC crystal
CN103000672B (zh) 半导体主体有掺杂材料区域的元器件和生成该区域的方法
CN105280485B (zh) 制造包括场停止区的半导体器件的方法
JP5203667B2 (ja) 半導体装置の製造方法
CN106128953B (zh) 制造半导体器件的方法与含氧相关热施主的半导体器件
JP6109432B2 (ja) 電力用半導体装置の製造方法
JP2017063187A5 (enExample)
JPWO2016203545A1 (ja) 半導体装置の製造方法
CN107039253B (zh) 用于处理硅晶圆的方法
CN106257628A (zh) 用于形成半导体器件的方法和半导体器件
CN104465766A (zh) 半导体器件和用于形成半导体器件的方法
JP2025530857A (ja) 半導体本体を製造するための方法、半導体本体およびパワー半導体デバイス
JP2023554043A (ja) 半導体デバイスのための構造体および半導体デバイスのための構造体を製造するための方法
CN111341651A (zh) 晶体管外延层制作方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20151112

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20161122

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170227

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170404

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190408

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190508

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190610

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190704

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191114

R150 Certificate of patent or registration of utility model

Ref document number: 6619210

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250