JP2017063187A5 - - Google Patents
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- Publication number
- JP2017063187A5 JP2017063187A5 JP2016164702A JP2016164702A JP2017063187A5 JP 2017063187 A5 JP2017063187 A5 JP 2017063187A5 JP 2016164702 A JP2016164702 A JP 2016164702A JP 2016164702 A JP2016164702 A JP 2016164702A JP 2017063187 A5 JP2017063187 A5 JP 2017063187A5
- Authority
- JP
- Japan
- Prior art keywords
- boron
- type dopant
- silicon
- silicon melt
- source material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 32
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 23
- 229910052796 boron Inorganic materials 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000005204 segregation Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 16
- 238000009792 diffusion process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000002513 implantation Methods 0.000 claims 2
- 238000011065 in-situ storage Methods 0.000 claims 2
- 239000010453 quartz Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052580 B4C Inorganic materials 0.000 claims 1
- 229910052582 BN Inorganic materials 0.000 claims 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015114177.9A DE102015114177A1 (de) | 2015-08-26 | 2015-08-26 | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
| DE102015114177.9 | 2015-08-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017063187A JP2017063187A (ja) | 2017-03-30 |
| JP2017063187A5 true JP2017063187A5 (enExample) | 2019-08-15 |
Family
ID=58010576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016164702A Pending JP2017063187A (ja) | 2015-08-26 | 2016-08-25 | 半導体デバイス、シリコンウェハ、及びシリコンウェハの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US20170062568A1 (enExample) |
| JP (1) | JP2017063187A (enExample) |
| DE (1) | DE102015114177A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
| DE102016015475B3 (de) * | 2016-12-28 | 2018-01-11 | 3-5 Power Electronics GmbH | IGBT Halbleiterstruktur |
| DE212018000097U1 (de) * | 2017-01-25 | 2019-07-31 | Rohm Co., Ltd. | Halbleitervorrichtung |
| US10431462B2 (en) * | 2017-02-15 | 2019-10-01 | Lam Research Corporation | Plasma assisted doping on germanium |
| JP7173312B2 (ja) | 2019-05-16 | 2022-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| US11450734B2 (en) * | 2019-06-17 | 2022-09-20 | Fuji Electric Co., Ltd. | Semiconductor device and fabrication method for semiconductor device |
| US11585010B2 (en) * | 2019-06-28 | 2023-02-21 | Globalwafers Co., Ltd. | Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant |
| WO2021125064A1 (ja) | 2019-12-18 | 2021-06-24 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| WO2021181644A1 (ja) | 2020-03-13 | 2021-09-16 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| CN115280472B (zh) * | 2020-03-17 | 2025-07-25 | 信越半导体株式会社 | 单晶硅基板中的施主浓度的控制方法 |
| JP7264100B2 (ja) * | 2020-04-02 | 2023-04-25 | 信越半導体株式会社 | シリコン単結晶基板中のドナー濃度の制御方法 |
| DE102020120933A1 (de) | 2020-08-07 | 2022-02-10 | Infineon Technologies Ag | Verfahren zum herstellen von cz-siliziumwafern |
| US12495596B2 (en) | 2021-09-15 | 2025-12-09 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method |
| US20230112094A1 (en) * | 2021-10-11 | 2023-04-13 | Globalwafers Co., Ltd. | Modeling thermal donor formation and target resistivity for single crystal silicon ingot production |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190292A (ja) * | 1983-04-08 | 1984-10-29 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶の抵抗率制御方法 |
| JPS61163188A (ja) * | 1985-01-14 | 1986-07-23 | Komatsu Denshi Kinzoku Kk | シリコン単結晶引上法における不純物のド−プ方法 |
| JP2837903B2 (ja) * | 1989-12-27 | 1998-12-16 | 新日本製鐵株式会社 | シリコン単結晶の製造方法 |
| JP2550739B2 (ja) * | 1990-02-23 | 1996-11-06 | 住友金属工業株式会社 | 結晶成長方法 |
| JPH1029894A (ja) * | 1996-07-15 | 1998-02-03 | Hitachi Ltd | 単結晶シリコンの比抵抗調整方法および単結晶シリコン製造装置 |
| JP2000077350A (ja) | 1998-08-27 | 2000-03-14 | Mitsubishi Electric Corp | 電力用半導体装置及びその製造方法 |
| JP4618944B2 (ja) * | 2001-08-06 | 2011-01-26 | シャープ株式会社 | 結晶シートの製造装置、および結晶シートの製造方法 |
| JP4380204B2 (ja) * | 2003-04-10 | 2009-12-09 | 株式会社Ｓｕｍｃｏ | シリコン単結晶及び単結晶育成方法 |
| DE102005026408B3 (de) | 2005-06-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone |
| US7651566B2 (en) | 2007-06-27 | 2010-01-26 | Fritz Kirscht | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| JP2011093778A (ja) * | 2009-09-29 | 2011-05-12 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウェーハおよびシリコン単結晶の製造方法 |
| CN102687277B (zh) | 2009-11-02 | 2016-01-20 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
| JP5557333B2 (ja) * | 2010-12-27 | 2014-07-23 | コバレントマテリアル株式会社 | シリコン単結晶引上げ用シリカガラスルツボ |
| JP5372105B2 (ja) * | 2011-10-17 | 2013-12-18 | ジルトロニック アクチエンゲゼルシャフト | ｎ型シリコン単結晶およびその製造方法 |
| EP2800143B1 (en) | 2011-12-28 | 2020-04-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
| DE102012020785B4 (de) | 2012-10-23 | 2014-11-06 | Infineon Technologies Ag | Erhöhung der Dotierungseffizienz bei Protonenbestrahlung |
| CN104347408B (zh) * | 2013-07-31 | 2017-12-26 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
| DE102013216195B4 (de) * | 2013-08-14 | 2015-10-29 | Infineon Technologies Ag | Verfahren zur Nachdotierung einer Halbleiterscheibe |
| DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
-
2015
- 2015-08-26 DE DE102015114177.9A patent/DE102015114177A1/de not_active Withdrawn
-
2016
- 2016-08-25 JP JP2016164702A patent/JP2017063187A/ja active Pending
- 2016-08-25 US US15/247,200 patent/US20170062568A1/en not_active Abandoned
-
2017
- 2017-11-22 US US15/820,770 patent/US10566424B2/en active Active
-
2020
- 2020-01-27 US US16/773,225 patent/US10957767B2/en active Active
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