JP6119059B2 - 半導体ウエハを処理するための方法 - Google Patents
半導体ウエハを処理するための方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 194
- 238000000034 method Methods 0.000 title claims description 128
- 235000012431 wafers Nutrition 0.000 claims description 171
- 239000002245 particle Substances 0.000 claims description 108
- 230000005855 radiation Effects 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 238000002513 implantation Methods 0.000 claims description 18
- 230000007547 defect Effects 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 238000005137 deposition process Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- -1 hydrogen cations Chemical class 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Description
少なくとも40μm若しくは少なくとも80μmでも良く、且つ/又は
半導体ウエハ100が、第1の垂直方向v1に有する厚さt100の少なくとも5%若しくは少なくとも10%でも良い。
少なくとも1.5若しくは少なくとも2.0、且つ/又は
20.0以下若しくは6.0以下の少なくとも1つであっても良い。
11 第2の粒子
12 水素含有前駆物質
13 第3の粒子
100 半導体ウエハ
100’ パワー半導体コンポーネント
101 第1の面
101’ 最終的な第1の面
102 第2の面
102’ 最終的な第2の面
110 より低い酸素濃度の領域
110’、110’’ 目標領域
111 整流接合
114 非露出層
115 露出層
116 表面部
117 pドープ半導体領域
118 ドリフト領域
119 フィールドストップ領域
120 窒化物層
130 pドープ半導体領域
C1 第1の最高濃度
C2 第2の最高濃度
CMAX 第1の正味ドーピング濃度
CMIN 第2の正味ドーピング濃度
d0 距離
d1 第1の深さ
d2 第2の深さ
d3 第3の深さ
d111 深さ
d23 差
E 第1の平面
e1、e2、e3 ドーピングプロファイル
MAX、MAX’ 極大値
MIN、MIN’ 極小値
NA 合計アクセプタ濃度
NA0 正味ドーピング濃度
ND 合計ドナー濃度
ND0 一定の正味ドーピング濃度
ND1、ND2 ドーピング濃度
pa1、pa2、pb1、pb2、pc1、pc2、pd1、pd2 濃度プロファイル
t100 厚さ
v1 第1の垂直方向
Claims (25)
- 第1の面及び前記第1の面の裏側に第2の面を有する磁気チョクラルスキー半導体ウエハであって、前記第1の面が、第1の垂直方向において、前記第2の面から離れて配置されている半導体ウエハを用意することと、
前記第2の面を介して半導体ウエハに粒子を注入して、第1の深さで欠陥濃度が最大になる結晶欠陥を半導体ウエハに形成することと、
第1の熱プロセスにおいて半導体ウエハを加熱して、放射線誘起ドナーを形成することと、
を含む、半導体ウエハを処理するための方法であって、
前記粒子を注入する際の注入エネルギ及び注入ドーズを選択することにより、前記放射線誘起ドナー生成後の半導体ウエハのnドープ半導体領域が、前記第2の面と前記第1の深さとの間に配置されるとともに、前記nドープ半導体領域が、前記第1の垂直方向において、前記第1の深さと前記第2の面との間に正味ドーピング濃度の極大値を有し、前記第1の深さと前記正味ドーピング濃度の極大値における深さとの間に前記正味ドーピング濃度の極小値を有するようにした、方法。 - 前記第1の熱プロセスの前又は後に、放射線誘起ドナーの形成を抑制するための第2の粒子をMCZ半導体ウエハに導入することを更に含む、請求項1に記載の方法。
- 第1の面及び前記第1の面の裏側に第2の面を有する半導体ウエハであって、前記第1の面が、第1の垂直方向において、前記第2の面から離れて配置されている半導体ウエハを用意することと、
前記第2の面を介して半導体ウエハに第1の粒子を注入して、第1の深さで欠陥濃度が最大になる結晶欠陥を半導体ウエハに形成することと、
第1の熱プロセスにおいて半導体ウエハを加熱して、放射線誘起ドナーを形成することと、
前記第1の熱プロセスの前に、放射線誘起ドナーの形成を抑制するための第2の粒子を半導体ウエハに導入することと、
を含む、半導体ウエハを処理するための方法であって、
前記第1の深さ、照射ドーズ及び前記第2の粒子の濃度プロファイルを選択することにより、前記放射線誘起ドナー生成後の半導体ウエハのnドープ半導体領域が、前記第2の面と前記第1の深さとの間に配置されるとともに、前記nドープ半導体領域が、前記第1の垂直方向において、前記第1の深さと前記第2の面との間に正味ドーピング濃度の極大値を有し、前記第1の深さと前記正味ドーピング濃度の極大値における深さとの間に前記正味ドーピング濃度の極小値を有するようにした、方法。 - 前記半導体ウエハが、
チョクラルスキーウエハと、
磁気チョクラルスキーウエハと、
フロートゾーンウエハと、
からなる群から選択される、請求項3に記載の方法。 - 前記第1の粒子を前記半導体ウエハに照射するより前に、前記第2の粒子が導入される、請求項3に記載の方法。
- 前記第1の粒子を前記半導体ウエハに照射した後で、前記第2の粒子が導入される、請求項3に記載の方法。
- 前記第2の粒子が水素を含む、請求項3に記載の方法。
- 前記水素が、前記第2の面を介して前記半導体ウエハに拡散又は注入される、請求項7に記載の方法。
- 窒化物層が前記第2の面に堆積されるプラズマ堆積プロセス中に、前記水素が前記半導体ウエハに導入される、請求項7に記載の方法。
- 前記半導体ウエハのpドープ半導体領域に前記水素を注入することであって、前記pドープ半導体領域が、前記第2の面と前記第1の深さとの間に配置されることと、
第3の熱プロセスにおいて、前記注入された前記水素を拡散させることと、
を更に含む、請求項7に記載の方法。 - 放射線誘起ドナーの形成を抑制するための第3の粒子を前記半導体ウエハに導入することを更に含む、請求項3に記載の方法。
- 前記第3の粒子が水素を含む、請求項11に記載の方法。
- 前記第3の粒子が、前記第2の面の裏側の前記半導体ウエハの面を介して、前記半導体ウエハに導入される、請求項11に記載の方法。
- 前記第3の粒子が、前記第1の熱プロセスの前に、前記半導体ウエハに導入される、請求項11に記載の方法。
- 前記導入された第3の粒子は、第2の深さの位置で濃度が最大になる、請求項11に記載の方法。
- 前記半導体ウエハが、
前記第1の面から前記第1の面と平行な第1の平面にまでわたり、且つ格子間酸素の第1の最大濃度を有する非露出層と、
前記第2の面から前記第1の平面にまでわたり、且つ格子間酸素の第2の最大濃度を有する露出層と、
を含み、
前記第1の最大濃度が、前記第2の最大濃度の少なくとも2倍である、請求項3に記載の方法。 - 前記第1の平面と前記第2の面との間の距離が、第2の深さ及び第3の深さの両方より大きい、請求項16に記載の方法。
- 前記第1の平面と前記第2の面との間の距離が、前記第1の深さより大きい、請求項16に記載の方法。
- 前記第1の粒子が陽子である、請求項3に記載の方法。
- 前記第1の深さが、
少なくとも40μm又は少なくとも80μmと、
前記半導体ウエハが前記第1の垂直方向に有する厚さの少なくとも5%又は少なくとも10%と、
の少なくとも1つである、請求項3に記載の方法。 - 前記半導体ウエハが、少なくとも400μmの厚さを有する、請求項3に記載の方法。
- 前記照射ドーズが、少なくとも1・1014cm−2又は少なくとも4・1014cm−2である、請求項3に記載の方法。
- 第2の深さと第3の深さとの間の差が、少なくとも25μmである、請求項3に記載の方法。
- 前記正味ドーピング濃度が、第2の深さにおける第1の正味ドーピング濃度及び第3の深さにおける第2の正味ドーピング濃度を有し、前記第1の正味ドーピング濃度と前記第2の正味ドーピング濃度との間の比率が、
少なくとも1.5又は少なくとも2.0と、
20.0以下又は6.0以下と、
の少なくとも1つである、請求項3に記載の方法。 - 前記半導体ウエハが、前記第1の粒子を注入する前に、一定のpドーピング又は一定のn−ドーピングを有する、請求項3に記載の方法。
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