CN104851972A - 压电体薄膜元件、其制造方法、以及使用了该压电体薄膜元件的电子设备 - Google Patents
压电体薄膜元件、其制造方法、以及使用了该压电体薄膜元件的电子设备 Download PDFInfo
- Publication number
- CN104851972A CN104851972A CN201410498351.XA CN201410498351A CN104851972A CN 104851972 A CN104851972 A CN 104851972A CN 201410498351 A CN201410498351 A CN 201410498351A CN 104851972 A CN104851972 A CN 104851972A
- Authority
- CN
- China
- Prior art keywords
- piezoelectric film
- film
- acid alkali
- niobic acid
- alkali system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 239000010409 thin film Substances 0.000 title abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims description 74
- 239000002253 acid Substances 0.000 claims description 39
- 239000003513 alkali Substances 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000576 coating method Methods 0.000 claims description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 26
- 238000001312 dry etching Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 18
- 239000011651 chromium Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 238000001020 plasma etching Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 3
- 230000008025 crystallization Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 217
- 239000000463 material Substances 0.000 abstract description 12
- 230000000052 comparative effect Effects 0.000 description 19
- 239000007789 gas Substances 0.000 description 13
- 238000001259 photo etching Methods 0.000 description 13
- 239000011734 sodium Substances 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- GNAMAXOMHOZOFY-UHFFFAOYSA-M CC(C(C)=C(C=C1)[N+]([O-])=O)=C1C([O-])=O.N.[Ce+3] Chemical compound CC(C(C)=C(C=C1)[N+]([O-])=O)=C1C([O-])=O.N.[Ce+3] GNAMAXOMHOZOFY-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UTBYQPSPFXHANA-UHFFFAOYSA-N [K].[Na].[Li] Chemical compound [K].[Na].[Li] UTBYQPSPFXHANA-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- OBTSLRFPKIKXSZ-UHFFFAOYSA-N lithium potassium Chemical compound [Li].[K] OBTSLRFPKIKXSZ-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014025271A JP2015153850A (ja) | 2014-02-13 | 2014-02-13 | 圧電体薄膜素子、その製造方法、および該圧電体薄膜素子を用いた電子デバイス |
JP2014-025271 | 2014-02-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104851972A true CN104851972A (zh) | 2015-08-19 |
CN104851972B CN104851972B (zh) | 2019-03-29 |
Family
ID=53775846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410498351.XA Active CN104851972B (zh) | 2014-02-13 | 2014-09-25 | 压电体薄膜元件、其制造方法、以及电子设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9882546B2 (zh) |
JP (1) | JP2015153850A (zh) |
CN (1) | CN104851972B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109314185A (zh) * | 2016-06-15 | 2019-02-05 | 恩波顿公司 | 一种形成包括钙钛矿的装置的方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6366952B2 (ja) * | 2013-08-29 | 2018-08-01 | 住友化学株式会社 | ニオブ酸系強誘電体薄膜素子の製造方法 |
JP2016184692A (ja) * | 2015-03-26 | 2016-10-20 | 住友化学株式会社 | 強誘電体薄膜素子の製造方法 |
JP6191086B2 (ja) | 2015-08-04 | 2017-09-06 | Thk株式会社 | リニアアクチュエータの制御装置及び制御方法 |
JP6239566B2 (ja) * | 2015-10-16 | 2017-11-29 | 株式会社サイオクス | 圧電薄膜付き積層基板、圧電薄膜素子およびその製造方法 |
JP6958045B2 (ja) * | 2017-07-11 | 2021-11-02 | セイコーエプソン株式会社 | 圧電素子およびその製造方法、ならびに圧電素子応用デバイス |
US20190122785A1 (en) * | 2017-10-19 | 2019-04-25 | Shell Oil Company | Mineral insulated power cables for electric motor driven integral compressors |
US10270456B1 (en) * | 2018-01-02 | 2019-04-23 | Realtek Semiconductor Corp. | Apparatus and method for frequency tripling |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1272951A (zh) * | 1998-06-09 | 2000-11-08 | 塞姆特里克斯公司 | 铁电平板显示器 |
JP2006295142A (ja) * | 2005-03-15 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 圧電素子 |
US20070024162A1 (en) * | 2005-08-01 | 2007-02-01 | Hitachi Cable, Ltd. | Piezoelectric thin film element |
CN101390228A (zh) * | 2006-02-27 | 2009-03-18 | 京瓷株式会社 | 陶瓷构件的制造方法、陶瓷构件、气体传感器元件、燃料电池元件、过滤元件、层叠型压电元件、喷射装置以及燃料喷射系统 |
CN102395539A (zh) * | 2009-05-08 | 2012-03-28 | 太阳诱电株式会社 | 压电陶瓷及其制造方法以及压电器件 |
US20130015392A1 (en) * | 2011-07-15 | 2013-01-17 | Hitachi Cable, Ltd. | Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10006352A1 (de) * | 2000-02-12 | 2001-08-30 | Bosch Gmbh Robert | Piezoelektrischer Keramikkörper mit silberhaltigen Innenelektroden |
JP2001358218A (ja) * | 2000-04-13 | 2001-12-26 | Canon Inc | 有機膜のエッチング方法及び素子の製造方法 |
JP2002043644A (ja) * | 2000-07-24 | 2002-02-08 | Matsushita Electric Ind Co Ltd | 薄膜圧電素子 |
US7388318B2 (en) * | 2002-06-20 | 2008-06-17 | Ube Industries, Ltd. | Thin film piezoelectric resonator, thin film piezoelectric device, and manufacturing method thereof |
JP4847039B2 (ja) * | 2004-05-28 | 2011-12-28 | 日本碍子株式会社 | 圧電/電歪構造体及び圧電/電歪構造体の製造方法 |
US7332851B2 (en) * | 2004-09-29 | 2008-02-19 | Ngk Insulators, Ltd. | Piezoelectric/electrostrictive film type device and method of manufacturing the same |
JP2007019302A (ja) | 2005-07-08 | 2007-01-25 | Hitachi Cable Ltd | 圧電薄膜素子及びそれを用いたアクチュエータ並びにセンサ |
US7622853B2 (en) * | 2005-08-12 | 2009-11-24 | Scimed Life Systems, Inc. | Micromachined imaging transducer |
JP4749218B2 (ja) * | 2006-04-28 | 2011-08-17 | Okiセミコンダクタ株式会社 | 強誘電体素子の製造方法 |
JP2008159807A (ja) * | 2006-12-22 | 2008-07-10 | Hitachi Cable Ltd | 圧電薄膜素子及び圧電薄膜素子を用いて製造したアクチュエータとセンサ |
WO2009072585A1 (ja) * | 2007-12-05 | 2009-06-11 | Asahi Glass Co., Ltd. | 結晶質kln膜の製造方法、半導体装置の製造方法、半導体装置 |
JP5267082B2 (ja) * | 2008-01-24 | 2013-08-21 | 日立電線株式会社 | 圧電薄膜素子及びそれを用いたセンサ並びにアクチュエータ |
JP2009194278A (ja) * | 2008-02-18 | 2009-08-27 | Panasonic Corp | 誘電体部品 |
JP5209716B2 (ja) * | 2008-06-23 | 2013-06-12 | 住友精密工業株式会社 | 圧電体膜を用いた振動ジャイロ及びその製造方法 |
JP5423056B2 (ja) * | 2009-03-02 | 2014-02-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2011166037A (ja) * | 2010-02-12 | 2011-08-25 | Seiko Epson Corp | 圧電素子の製造方法、圧電素子、液体噴射ヘッド及び液体噴射装置 |
JP2011199673A (ja) * | 2010-03-19 | 2011-10-06 | Seiko Instruments Inc | 水晶基板のエッチング方法、圧電振動片、圧電振動子、発振器、電子機器、および電波時計 |
JP5071503B2 (ja) * | 2010-03-25 | 2012-11-14 | 日立電線株式会社 | 圧電薄膜素子及び圧電薄膜デバイス |
JP5510162B2 (ja) * | 2010-07-30 | 2014-06-04 | 日立金属株式会社 | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子、及び圧電体薄膜デバイス |
JP5471988B2 (ja) * | 2010-09-08 | 2014-04-16 | 日立金属株式会社 | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子及び圧電体薄膜デバイス、並びに圧電体薄膜ウェハの加工方法 |
JP2012099589A (ja) * | 2010-11-01 | 2012-05-24 | Hitachi High-Technologies Corp | プラズマ処理方法 |
JP2012204591A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 膜形成方法および不揮発性記憶装置 |
JP2013251355A (ja) * | 2012-05-31 | 2013-12-12 | Hitachi Cable Ltd | 圧電体膜素子の製造方法、圧電体膜素子、及び圧電体デバイス |
JP5704725B2 (ja) * | 2012-08-24 | 2015-04-22 | 太陽誘電株式会社 | 圧電セラミックス及び圧電素子 |
JP6178172B2 (ja) * | 2013-08-29 | 2017-08-09 | 住友化学株式会社 | ニオブ酸アルカリ系圧電体薄膜素子の製造方法 |
WO2015046434A1 (ja) * | 2013-09-30 | 2015-04-02 | 株式会社村田製作所 | 積層型圧電セラミック電子部品、及び積層型圧電セラミック電子部品の製造方法 |
-
2014
- 2014-02-13 JP JP2014025271A patent/JP2015153850A/ja active Pending
- 2014-09-25 CN CN201410498351.XA patent/CN104851972B/zh active Active
-
2015
- 2015-02-07 US US14/616,656 patent/US9882546B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1272951A (zh) * | 1998-06-09 | 2000-11-08 | 塞姆特里克斯公司 | 铁电平板显示器 |
JP2006295142A (ja) * | 2005-03-15 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 圧電素子 |
US20070024162A1 (en) * | 2005-08-01 | 2007-02-01 | Hitachi Cable, Ltd. | Piezoelectric thin film element |
CN101390228A (zh) * | 2006-02-27 | 2009-03-18 | 京瓷株式会社 | 陶瓷构件的制造方法、陶瓷构件、气体传感器元件、燃料电池元件、过滤元件、层叠型压电元件、喷射装置以及燃料喷射系统 |
CN102395539A (zh) * | 2009-05-08 | 2012-03-28 | 太阳诱电株式会社 | 压电陶瓷及其制造方法以及压电器件 |
US20130015392A1 (en) * | 2011-07-15 | 2013-01-17 | Hitachi Cable, Ltd. | Piezoelectric film and method for manufacturing the same, piezoelectric film element and method for manufacturing the same, and piezoelectric film device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109314185A (zh) * | 2016-06-15 | 2019-02-05 | 恩波顿公司 | 一种形成包括钙钛矿的装置的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104851972B (zh) | 2019-03-29 |
US20150229290A1 (en) | 2015-08-13 |
JP2015153850A (ja) | 2015-08-24 |
US9882546B2 (en) | 2018-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104851972A (zh) | 压电体薄膜元件、其制造方法、以及使用了该压电体薄膜元件的电子设备 | |
JP5510162B2 (ja) | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子、及び圧電体薄膜デバイス | |
JP6591005B2 (ja) | ニオブ酸系強誘電体薄膜素子の製造方法 | |
JP6366952B2 (ja) | ニオブ酸系強誘電体薄膜素子の製造方法 | |
JP6173845B2 (ja) | 圧電体薄膜素子の製造方法 | |
JP5644671B2 (ja) | 圧電膜素子の製造方法 | |
JP2012059852A (ja) | 圧電体薄膜ウェハの製造方法、圧電体薄膜素子及び圧電体薄膜デバイス、並びに圧電体薄膜ウェハの加工方法 | |
JP2014060267A (ja) | 圧電膜素子及びそれを備えた圧電膜デバイス | |
JP5897436B2 (ja) | 圧電体薄膜付き基板の製造方法、及び圧電体薄膜素子の製造方法 | |
US10658569B2 (en) | Method for manufacturing niobate-system ferroelectric thin-film device | |
CN104425703A (zh) | 压电体薄膜元件、其制造方法、以及使用了该压电体薄膜元件的电子设备 | |
JP2012059851A (ja) | 圧電体薄膜の加工方法 | |
JP6703979B2 (ja) | ニオブ酸系強誘電体薄膜素子の製造方法 | |
US10211044B2 (en) | Method for manufacturing ferroelectric thin film device | |
JP2012059909A (ja) | 圧電体薄膜の加工方法 | |
JP2014123584A (ja) | 圧電体薄膜を具備する基板の製造方法および圧電体薄膜素子の製造方法 | |
JP2014207394A (ja) | 圧電体薄膜積層基板の製造方法および圧電体薄膜素子の製造方法 | |
JP2015046544A (ja) | 圧電体薄膜素子、その製造方法、および該圧電体薄膜素子を用いた電子デバイス |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SCIOCS COMPANY LIMITED Free format text: FORMER OWNER: HITACHI METALS, LTD. Effective date: 20150908 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150908 Address after: Ibaraki Applicant after: Hitachi Cable Address before: Tokyo, Japan, Japan Applicant before: Hitachi Metals Co., Ltd. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160314 Address after: Tokyo, Japan, Japan Applicant after: Sumitomo Chemical Co., Ltd. Address before: Ibaraki Applicant before: Hitachi Cable |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |