CN104781262B - 稳定的金属化合物、它们的组合物以及它们的使用方法 - Google Patents
稳定的金属化合物、它们的组合物以及它们的使用方法 Download PDFInfo
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- CN104781262B CN104781262B CN201380059422.XA CN201380059422A CN104781262B CN 104781262 B CN104781262 B CN 104781262B CN 201380059422 A CN201380059422 A CN 201380059422A CN 104781262 B CN104781262 B CN 104781262B
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- ethyl acetoacetate
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
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- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/28—Titanium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic System
- C07F3/02—Magnesium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
- C07F5/06—Aluminium compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/24—Lead compounds
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/90—Antimony compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G79/00—Macromolecular compounds obtained by reactions forming a linkage containing atoms other than silicon, sulfur, nitrogen, oxygen, and carbon with or without the latter elements in the main chain of the macromolecule
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L85/00—Compositions of macromolecular compounds obtained by reactions forming a linkage in the main chain of the macromolecule containing atoms other than silicon, sulfur, nitrogen, oxygen and carbon; Compositions of derivatives of such polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
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- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Polymers & Plastics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
Abstract
Description
剥离溶液 | 剥离条件 |
85%磷酸 | 2分钟@70℃ |
3%氢氟酸 | 1分钟@25℃ |
10%TMAH | 1分钟@60℃ |
10%过氧化氢 | 1分钟@50℃ |
NH4OH/H2O2/H2O 1/4/40 | 30秒@28℃ |
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811239514.7A CN109180722B (zh) | 2012-12-07 | 2013-12-06 | 稳定的金属化合物、它们的组合物以及它们的使用方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/707,993 | 2012-12-07 | ||
US13/707,993 US9315636B2 (en) | 2012-12-07 | 2012-12-07 | Stable metal compounds, their compositions and methods |
PCT/EP2013/075815 WO2014086982A2 (en) | 2012-12-07 | 2013-12-06 | Stable metal compounds, their compositions and methods of their use |
Related Child Applications (1)
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CN201811239514.7A Division CN109180722B (zh) | 2012-12-07 | 2013-12-06 | 稳定的金属化合物、它们的组合物以及它们的使用方法 |
Publications (2)
Publication Number | Publication Date |
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CN104781262A CN104781262A (zh) | 2015-07-15 |
CN104781262B true CN104781262B (zh) | 2018-11-13 |
Family
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CN201380059422.XA Active CN104781262B (zh) | 2012-12-07 | 2013-12-06 | 稳定的金属化合物、它们的组合物以及它们的使用方法 |
CN201811239514.7A Active CN109180722B (zh) | 2012-12-07 | 2013-12-06 | 稳定的金属化合物、它们的组合物以及它们的使用方法 |
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CN201811239514.7A Active CN109180722B (zh) | 2012-12-07 | 2013-12-06 | 稳定的金属化合物、它们的组合物以及它们的使用方法 |
Country Status (8)
Country | Link |
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US (1) | US9315636B2 (zh) |
EP (1) | EP2928899B1 (zh) |
JP (1) | JP6430954B2 (zh) |
KR (2) | KR102177184B1 (zh) |
CN (2) | CN104781262B (zh) |
SG (1) | SG11201502264SA (zh) |
TW (1) | TWI627231B (zh) |
WO (1) | WO2014086982A2 (zh) |
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JP5889568B2 (ja) | 2011-08-11 | 2016-03-22 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 酸化タングステン膜形成用組成物およびそれを用いた酸化タングステン膜の製造法 |
KR101674989B1 (ko) * | 2013-05-21 | 2016-11-22 | 제일모직 주식회사 | 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
US9201305B2 (en) | 2013-06-28 | 2015-12-01 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin-on compositions of soluble metal oxide carboxylates and methods of their use |
US9296922B2 (en) * | 2013-08-30 | 2016-03-29 | Az Electronic Materials (Luxembourg) S.A.R.L. | Stable metal compounds as hardmasks and filling materials, their compositions and methods of use |
US9409793B2 (en) | 2014-01-14 | 2016-08-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Spin coatable metallic hard mask compositions and processes thereof |
US9499698B2 (en) * | 2015-02-11 | 2016-11-22 | Az Electronic Materials (Luxembourg)S.A.R.L. | Metal hardmask composition and processes for forming fine patterns on semiconductor substrates |
US10241409B2 (en) * | 2015-12-22 | 2019-03-26 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Materials containing metal oxides, processes for making same, and processes for using same |
WO2017198418A1 (en) * | 2016-05-19 | 2017-11-23 | Asml Netherlands B.V. | Resist compositions |
JPWO2018168221A1 (ja) * | 2017-03-13 | 2020-01-16 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
KR102456279B1 (ko) | 2017-03-16 | 2022-10-18 | 메르크 파텐트 게엠베하 | 리소그래피 조성물 및 이의 사용 방법 |
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JP2016508963A (ja) | 2016-03-24 |
CN109180722A (zh) | 2019-01-11 |
TWI627231B (zh) | 2018-06-21 |
KR102177184B1 (ko) | 2020-11-11 |
US20140159278A1 (en) | 2014-06-12 |
TW201443159A (zh) | 2014-11-16 |
EP2928899A2 (en) | 2015-10-14 |
US9315636B2 (en) | 2016-04-19 |
KR20200094232A (ko) | 2020-08-06 |
KR20150092737A (ko) | 2015-08-13 |
SG11201502264SA (en) | 2015-04-29 |
WO2014086982A3 (en) | 2014-08-28 |
JP6430954B2 (ja) | 2018-11-28 |
KR102302645B1 (ko) | 2021-09-15 |
CN109180722B (zh) | 2021-01-01 |
EP2928899B1 (en) | 2020-09-09 |
WO2014086982A2 (en) | 2014-06-12 |
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