CN104704606A - 针对先进元件的晶圆上粒子性能的化学相容性涂层材料 - Google Patents

针对先进元件的晶圆上粒子性能的化学相容性涂层材料 Download PDF

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Publication number
CN104704606A
CN104704606A CN201380039967.4A CN201380039967A CN104704606A CN 104704606 A CN104704606 A CN 104704606A CN 201380039967 A CN201380039967 A CN 201380039967A CN 104704606 A CN104704606 A CN 104704606A
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coating
main body
goods
plasma spray
spray system
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CN201380039967.4A
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CN104704606B (zh
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J·Y·孙
B·P·卡农戈
D·卢博米尔斯基
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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    • C04B41/85—Coating or impregnation with inorganic materials
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    • C—CHEMISTRY; METALLURGY
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    • C—CHEMISTRY; METALLURGY
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Abstract

为了针对一种用于半导体处理腔室的制品制造涂层，该制品包括Al、Al2O3或SiC中的至少一者的主体及主体上的陶瓷涂层。陶瓷涂层包括一化合物，该化合物包含自约50摩尔％至约75摩尔％范围内的Y2O3、自约10摩尔％至约30摩尔％范围内的ZrO2及自约10摩尔％至约30摩尔％范围内的Al2O3，其中每英寸节结的数目处于自约30个节结至约45个节结的范围内且孔隙率处于自约2.5％至约3.2％的范围内。

Description

针对先进元件的晶圆上粒子性能的化学相容性涂层材料
技术领域
本揭示案的实施例大体而言是关于陶瓷涂布制品及是关于一种用于向介电蚀刻处理组件涂覆陶瓷涂层的工艺。
背景技术
在半导体工业中，通过众多用于生产尺寸日益缩小的结构的制造工艺来制造元件。一些制造工艺(诸如等离子体蚀刻及等离子体清洗工艺)将基板曝露于高速等离子体流中，以蚀刻或清洗基板。等离子体可为强腐蚀性，且可腐蚀处理腔室及其他曝露于等离子体的表面。此腐蚀可产生经常污染正经处理的基板的粒子，从而导致元件缺陷。
随着元件几何形状缩小，对缺陷的易感性增加且粒子污染物要求变得更加严格。因此，随着元件几何形状缩小，可降低粒子污染的容许水准。为了最小化由等离子体蚀刻工艺及/或等离子体清洗工艺引入的粒子污染，已经开发出抗等离子体的腔室材料。不同材料提供不同材料特性，诸如等离子体抗性、刚性、弯曲强度、耐热冲击性等等。又，不同材料具有不同材料成本。因此，一些材料具有优良的等离子体抗性，其他材料具有较低成本，而还有其他材料具有优良的弯曲强度及/或耐热冲击性。
摩尔摩尔摩尔摩尔摩尔摩尔摩尔摩尔摩尔附图说明
在附图的诸图中以示例的方式(而非以限定的方式)图示本发明，在这些附图中，类似元件符号指示相似元件。应注意，对本揭示案中的“一”或“一个”实施例的不同引用不一定指示相同实施例，且此种引用意谓至少一者。
图1图示衬垫套件的横断面视图。
图2图示制造系统的示例性架构。
图3图示等离子体喷涂系统的横断面视图。
图4图示根据一个实施例的向制品涂覆涂层的方法。
图5图示用于涂层的粉末形状。
图6A图示用于涂层的粉末尺寸分布。
图6B图示根据一个实施例的用于涂层的粉末尺寸分布。
图7A图示根据一个实施例的涂层的节结计数。
图7B图示根据一个实施例的涂层的表面粗糙度。
图7C图示根据一个实施例的涂层的横断面孔隙率。
图8图示涂层的涂覆。
图9图示根据一个实施例的涂覆涂层的方法。
图10图示涂层表面的扫描式电子显微镜(scanning electron microscope；SEM)视图。
图11图示涂层的横断面的SEM视图。
图12A图示随时间流逝的涂层的粒子性能。
图12B图示根据一个实施例的涂层的粒子性能。
具体实施方式
本发明的实施例是针对一种制品(例如，等离子体筛、衬垫套件、淋喷头、盖、静电卡盘或用于半导体处理腔室的曝露于还原性等离子体化学品中的其他腔室组件，该制品包括Al或Al2O3或SiC基板)及制品上的陶瓷涂层。在一个实施例中，陶瓷涂层是复合陶瓷，包括Y4Al2O9(YAM)的化合物及Y2-xZrxO3的固溶体，其中该陶瓷涂层耐还原性化学品(H2、CO、COS、CH4等等)。
在制品上涂布陶瓷涂层的方法包括以下步骤：提供具有在约90A至约150A范围内的等离子体电流的等离子体喷涂系统；及在距离制品约60mm与约120mm之间处安置等离子体喷涂系统的喷灯支架。该方法亦包括以下步骤：使得气体以约80公升/分钟与约130公升/分钟之间的速率流过等离子体喷涂系统；及用陶瓷涂层等离子体喷涂制品。
导体蚀刻工艺涉及通过气体混合物的导电基板(诸如Si晶圆)的等离子体辅助蚀刻。在导体蚀刻中，晶圆上水准粒子性能主要与腔室关键组件相关联，尤其是与具有前侧120、后侧122及外径124的衬垫套件100相关联，该衬垫套件100可包括腔室主体111、上衬垫101、缝隙阀门103、等离子体筛105(亦即，围绕晶圆的类格栅结构)、下衬垫107及阴极衬垫109，如图1所示。上衬垫101、缝隙阀门103及下衬垫107较接近于腔室主体111，而等离子体筛105围绕晶圆(未图示，但是在操作期间位于位置130处)且阴极衬垫109位于晶圆下方。
标准衬垫套件可由涂有8-12密耳的等离子体喷涂Y2O3(氧化钇)或其他陶瓷且具有约100-270微英寸(μin)的表面粗糙度的Al基板组成。对于大多数典型半导体涂覆，晶圆上粒子规格是在大于或等于90nm粒子尺寸处约30个附加物(例如，位于晶圆上的杂散粒子)的最大值。标准Y2O3衬垫套件符合此晶圆上粒子规格。
针对28nm元件节点处的特定先进涂覆，晶圆上粒子规格在大于或等于45nm尺寸处小于或等于1.3个附加物时更加严格。此外，该等涂覆可使用经常增加晶圆上粒子污染的还原性化学品(H2、CH4、CO、COS等等)。在还原性化学品下使用习知Y2O3涂布衬垫套件的腔室测试展示高晶圆上粒子(例如，在大于或等于45nm粒子尺寸处约50至100个或更多个附加物)，但是显著的腔室干燥(seasoning，例如，100至150个射频RF处理小时)可在大于或等于45nm尺寸处将粒子缺陷水准降低至约0至10个附加物，以便在生产可继续前满足生产规格。然而，长时间腔室干燥可降低生产力。在测试中，能量分散的X射线光谱学已证实习知基于Y2O3的晶圆上粒子可来源于衬垫套件。
进一步，Y2O3涂层在还原性化学品(例如，H2、CH4、CO、COS等等)下稳定性较低及形成明显的Y-OH。Y-OH转换导致容积变化，从而导致流出可于晶圆上发现的粒子。然而，在无还原性化学品的情况下，Y2O3为稳定的且不会流出粒子。
本发明的实施例包括复合陶瓷涂层材料以增加与还原性化学品使用的相容性，以便改良半导体工业应用中针对腔室组件的晶圆上粒子性能。举例而言，在衬垫套件涂覆中，可使用等离子体喷涂技术将复合陶瓷涂层(例如，基于氧化钇的复合陶瓷涂层)涂覆于衬垫套件的面向等离子体的侧面。在其他实施例中，可经由气溶胶沉积、浆料等离子体或其他适宜技术(诸如其他热喷涂技术)涂覆复合陶瓷涂层。在一个实例中，铝衬垫套件上的涂层厚度可高达25密耳。在另一实例中，涂层的热膨胀系数(coefficient of thermal expansion；CTE)更好地与基板的CTE相匹配的Al2O3或其他金属氧化物基板可具有较厚涂层。
在一个实施例中，复合陶瓷涂层由化合物Y4Al2O9(YAM)及固溶体Y2-xZrxO3(Y2O3-ZrO2固溶体)组成。在另一实施例中，复合陶瓷涂层包括62.93摩尔％的Y2O3、23.23摩尔％的ZrO2及13.94摩尔％的Al2O3。在又一实施例中，复合陶瓷涂层可包括在50摩尔％-75摩尔％的范围内的Y2O3、在10摩尔％-30摩尔％的范围内的ZrO2及在10摩尔％-30摩尔％的范围内的Al2O3。在其他实施例中，其他分配亦可用于复合陶瓷涂层。在一个实施例中，复合陶瓷是含有氧化钇的固溶体，该固溶体可与ZrO2、Al2O3、HfO2、Er2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3或前述物质的组合中的一或更多者混合。
在各种涂层测试期间，在无CO及H2(非还原性化学品)情况下及有CO及H2(亦即，在还原性化学品下)情况下观察晶圆上粒子水准。与所测试的其他涂层及块体材料(例如，块体Y2O3、等离子体喷涂的(PS)Y2O3、SiC、柱状Si、单晶Si及SiO2)相比，复合陶瓷涂层呈现较好的抗腐蚀性，尤其是在与还原性化学品一起的情况下，此情况展示出与所测试的其他涂层相比复合陶瓷涂层的较低腐蚀速率(每RFhr的腐蚀深度)。举例而言，图12A图示随RF小时数变化针对>45nm粒子的Y2O3涂层的晶圆上粒子性能。在此处，涂层展示在初始阶段(例如，小于20RF小时)的高数目的YO粒子及需要80至100RF小时达到稳定粒子数目。图12B图示随RF小时数变化针对45nm粒子的复合陶瓷涂层的晶圆上粒子性能，在此处涂层并未展示在干燥期间的高数目的YO粒子且YO粒子的数目在60RF小时处一致较低(亦即，小于5个附加物)。
图2图示制造系统200的示例性架构。制造系统200可为涂层制造系统(例如，用于对诸如衬垫套件的制品涂覆复合陶瓷涂层)。在一个实施例中，制造系统200包括连接至设备自动化层215的处理设备201。处理设备201可包括珠粒喷击器202、一或更多个湿式清洗器203、等离子体喷枪系统204及/或其他设备。制造系统200可进一步包括连接至设备自动化层215的一或更多个计算元件220。在替代实施例中，制造系统200可包括更多或更少组件。举例而言，制造系统200可包括人工作业(例如，线下)的处理设备201，而不包括设备自动化层215或计算元件220。
珠粒喷击器202是经配置以粗化制品(例如，衬垫套件)的表面的机器。珠粒喷击器202可为珠粒喷击箱、手持型珠粒喷击器或其他类型珠粒喷击器。珠粒喷击器202可通过利用珠粒或粒子轰击基板来粗化基板。在一个实施例中，珠粒喷击器202在基板上发射陶瓷珠粒或粒子。由珠粒喷击器202实现的粗糙度可基于发射珠粒所使用的力、珠粒材料、珠粒尺寸、珠粒喷击器与基板之间的距离、处理持续时间等等。在一个实施例中，珠粒喷击器使用一系列珠粒尺寸以粗化陶瓷制品。
在替代实施例中，可使用除珠粒喷击器202以外的其他类型的表面粗化器。举例而言，可使用机动研磨垫以粗化陶瓷基板的表面。砂磨器可在研磨垫压抵制品的表面的同时旋转或振动研磨垫。通过研磨垫实现的粗糙度可取决于所施加的压力、振动或旋转速率及/或研磨垫的粗糙度。
湿式清洗器203是使用湿式清洗工艺清洗制品(例如，衬垫套件)的清洗装置。湿式清洗器203包括装满液体的湿式浸洗槽，将基板浸入该等槽中以清洗基板。湿式清洗器203可在清洗期间使用超音波搅动湿式浸洗槽以改良清洗功效。在本文中将此工艺称为超音波处理湿式浸洗槽。在其他实施例中，可使用诸如干式清洗器的替代类型清洗器来清洗制品。干式清洗器可通过施加热、气体、等离子体等等来清洗制品。
陶瓷涂布机204是经配置以向基板的表面涂覆陶瓷涂层的机器。在一个实施例中，陶瓷涂布机204为等离子体喷涂器(或等离子体喷涂系统)，该等离子体喷涂器对基板(例如，衬垫套件)上等离子体喷涂涂层(例如，复合陶瓷涂层)。在替代实施例中，陶瓷涂布机204可应用其他热喷涂技术，诸如可使用爆震喷涂、线电弧喷涂、高速氧气燃料(high velocity oxygen fuel；HVOF)喷涂、火焰喷涂、温喷涂及冷喷涂。另外，陶瓷涂布机204可执行其他涂布工艺，诸如可使用气溶胶沉积、电镀、物理气相沉积(physical vapor deposition；PVD)及化学气相沉积(chemical vapordeposition；CVD)以形成陶瓷涂层。
设备自动化层215可将一些或所有制造机器201与计算元件220、与其他制造机器、与计量工具及/或其他元件互连。设备自动化层215可包括网络(例如，局域网(location area network；LAN))、路由器、网关、服务器、数据储存器等等。制造机器201可经由SEMI设备通讯标准/通用设备模型(SEMI EquipmentCommunications Standard/Generic Equipment Model；SECS/GEM)介面、经由以太网介面及/或经由其他介面连接至设备自动化层215。在一个实施例中，设备自动化层215使得工艺资料(例如，由制造机器201在工艺操作期间收集的数据)能够储存在数据储存器(未图示)中。在替代实施例中，计算元件220直接连接至制造机器201中的一或更多者。
在一个实施例中，一些或所有制造机器201包括可编程控制器，该控制器可载入、储存及执行工艺配方。可编程控制器可控制制造机器201的温度设定、气体及/或真空设定、时间设定等等。可编程控制器可包括主存储器(例如，只读存储器(read-only memory；ROM)、快闪存储器、动态随机存取存储器(dynamic randomaccess memory；DRAM)、静态随机存取存储器(static random access memory；SRAM)等等)及/或二级存储器(例如，诸如磁盘驱动器的数据储存装置)。主存储器及/或二级存储器可储存用于执行本文所描述的热处理工艺的指令。
可编程控制器亦可包括处理元件，该处理元件耦接至主存储器及/或二级存储器(例如，经由总线耦接)以执行指令。处理元件可为通用处理元件，诸如微处理器、中央处理单元或类似装置。处理元件亦可为专用处理元件，诸如专用集成电路(application specific integrated circuit；ASIC)、现场可编程门阵列(field programmablegate array；FPGA)、数字信号处理器(digital signal processor；DSP)、网络处理器或类似装置。在一个实施例中，可编程控制器为可编程逻辑控制器(programmable logiccontroller；PLC)。
在一个实施例中，制造机器201经编程以执行配方，该等配方将使得制造机器粗化基板、清洗基板及/或制品、涂布制品及/或加工(例如，研磨或抛光)制品。在一个实施例中，制造机器201经编程以执行配方，该等配方执行用于制造陶瓷涂布制品的多操作工艺的操作，如参考以下图式所描述。计算元件220可储存可下载至制造机器201的一或更多个陶瓷涂层配方225，以使得制造机器201制造根据本揭示案的实施例的陶瓷涂布制品。
图3图示用于在介电蚀刻元件或腐蚀系统中所使用的其他制品(例如，衬垫套件)上等离子体喷涂涂层的系统300的横断面视图。系统300是一种热喷涂系统。在等离子体喷涂系统300中，电弧302形成于阳极304与阴极316此两个电极之间，气体318从该等电极之间流过。在等离子体喷涂系统300中适宜使用的气体示例包括(但不限于)氩/氢、氩/氦或氩/氧。随着电弧302加热气体，气体膨胀及加速穿过成形喷嘴306，从而产生高速等离子体流。
将粉末308注入等离子体喷涂或喷灯中，在该装置中极高的温度熔化粉末及推动该材料成为奔向制品310的熔化粒子314流。在冲击制品310之后，熔化粉末变平、迅速凝固、并形成涂层312，该涂层黏着于制品310。影响涂层312的厚度、密度及粗糙度的参数包括粉末类型、粉末尺寸分布、粉末馈送速率、等离子体气体组成、气体流动速率、能量输入、喷灯偏移距离及基板冷却。
图4是图示根据一实施例用于制造涂布制品的工艺400的流程图。可通过各种制造机器执行工艺400的操作。将参考如上文所描述的任何制品来描述工艺400的操作，该等工艺的操作可用于反应性离子蚀刻或等离子体蚀刻系统中。
在方块402处，最佳化用于等离子体喷涂涂层的粉末。此举可包括针对复合陶瓷涂层的粉末形状及尺寸分布的最佳化。在一个实施例中，最佳化涂层包括(但不限于)决定粉末类型(例如，化学成分)、平均粉末尺寸及粉末馈送速率。可选择粉末类型以产生如先前所描述的复合陶瓷涂层。选择具有规定组合物、纯度及尺寸的原料陶瓷粉末。陶瓷粉末可由Y2O3、Y4Al2O9、Y3Al5O12(YAG)或其他含有氧化钇的陶瓷形成。另外，陶瓷粉末可与ZrO2、Al2O3、HfO2、Er2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3或其他氧化物中的一或更多者结合。随后混合原料陶瓷粉末。在一个实施例中，将Y2O3、Al2O3及ZrO2的原料陶瓷粉末混合在一起用于复合陶瓷涂层。该等原料陶瓷粉末可具有99.9％的纯度或在一个实施例中纯度更高。原料陶瓷粉末可使用(例如)球磨混合。在混合陶瓷粉末后，可在规定煅烧时间及温度下煅烧该等陶瓷粉末。
图5图示根据一个实施例用于涂层的经最佳化的粉末粒子形状。在此处，一些粒子具有球形，在球体相对侧上具有深凹痕。换言之，大部分粒子具有环形。对由具有环形的粒子的粉末形成的涂层的评估展示出与其他形状的粉末粒子相比较具有改良后的形态及孔隙率。举例而言，由于粉末的熔化改良、粗糙度减小及孔隙率降低，由具有环形的粒子形成的涂层倾向于具有较少节结及较多长条，所有该等因素导致晶圆上粒子性能改良。
图6A图示针对粉末的粉末尺寸分布长条图，基于粉末涂布成涂层时涂层表面形态及孔隙率评估该粉末。在图6A中，50％的粒子的尺寸(亦即，粒径，D50)为约25微米或更小。图6B图示根据一实施例针对粉末的经最佳化的粉末尺寸分布长条图，亦基于粉末涂布成涂层时涂层表面形态及孔隙率评估该粉末。在图6B中，50％的粒子的尺寸(D50)小于或等于约15微米。对由具有50％的粒子的尺寸为约25微米或更小的粉末形成的涂层的评估(如图6A所示)展示出与具有较大尺寸的粉末相比较具有改良后的形态及孔隙率，该改良形态及孔隙率两者皆导致晶圆上粒子性能改良。
回到图4，在方块404处，等离子体喷涂参数经最佳化以最大化粉末的熔化，减少表面节结的数目，增加长条表面，减小粗糙度及降低孔隙率。在一个实施例中，最佳化等离子体喷涂参数包括(但不限于)决定等离子体喷枪功率及喷射载体气体的组合物。最佳化等离子体喷涂参数亦可包括最佳化喷涂涂层序列及最佳化用于在基板(例如，等离子体筛)上方涂覆涂层(例如，复合陶瓷涂层)的工艺条件。
举例而言，表A展示涂布工艺最佳化(例如，正交阵列评估)以评定及识别修正涂层参数对涂层表面形态的影响(例如，节结对比长条)。
在此处，在图7A、图7B及图7C中图示评估结果的实例。图7A图示针对每一参数的每一水准的200x放大照片(例如，一英寸样本的200x扫描式电子显微照相(SEM))上节结的数目。在一个示例中，水准1的主要气体流动速率(80升/分钟)造成的节结数目(约60个)比水准2的主要气体流动速率(90升/分钟)造成的节结数目(约45个)更多。进一步，水准2的主要气体流动速率造成的节结数目比水准3的主要气体流动速率(130升/分钟)造成的节结数目(约43个)更多。
在另一示例中，水准1的喷灯支架距离(60mm)造成的节结数目(约39个)比水准2的喷灯支架距离(80mm)造成的节结数目(约58个)更少。进一步，水准2的喷灯支架距离造成的节结数目比水准3的喷灯支架距离(120mm)造成的节结数目(约61个)更少。
图7B图示针对每一参数的每一水准的复合陶瓷涂层的平均表面粗糙度(Ra)(以微英寸表示)。在一个实例中，等离子体电流水准1(90A)造成的粗糙度(约260微英寸)比等离子体电流水准2造成的粗糙度(约255微英寸)更大。进一步，等离子体电流水准2(110A)造成的粗糙度比等离子体电流水准3(150A)造成的粗糙度(约250微英寸)更大。
图7C图示针对每一参数的每一水准的复合陶瓷涂层的横断面孔隙率(以百分比表示)。在一个示例中，水准1的主要气体流动速率(80升/分钟)造成的孔隙率(约4.2％)比水准2的主要气体流动速率(90升/分钟)造成的孔隙率(约3.4％)更大。进一步，水准2的主要气体流动速率造成的孔隙率比水准3的主要气体流动速率(130升/分钟)造成的孔隙率(约2.6％)更大。
在一个实施例中，参数经最佳化以最大化熔化，减少节结的数目(可指示粉末熔化中的增长)，增加长条表面(可指示粉末熔化中的增长)，减小表面粗糙度及降低涂层的孔隙率，该等结果将在还原性化学品下减少晶圆上粒子计数，因为粒子不太可能位移。表A的分析展示可最佳化涂层的参数水准是增加主要气体流动速率(例如，约130升/分钟)，增加等离子体电流(例如，约150A)，减小喷灯支架距离(例如，约60mm)及增加粉末的粒子直径(例如，50％的粒子的粒径约小于或等于25微米)。
举例而言，经最佳化的等离子体电流可在约90A至约150A范围内。进一步经最佳化的等离子体电流可在约110A至约150A的范围内。在另一示例中，等离子体喷涂系统的喷灯支架的经最佳化的定位可距离制品(例如，衬垫套件或等离子体筛)约60mm与约120mm之间。喷灯支架的进一步经最佳化的定位可距离制品约60mm与约90mm之间。在又另一示例中，经最佳化的气体可以约80升/分钟与约130升/分钟之间的速率流过等离子体喷涂系统。进一步经最佳化的气体可以约90升/分钟与约130升/分钟之间的速率流过等离子体喷涂系统。
在上文示例中，根据进一步经最佳化的参数在制品上所涂布的涂层可具有每英寸约30个节结至约45个节结的节结计数、约220微英寸至约250微英寸的粗糙度及约2.5％至约3.2％的横断面孔隙率。
再回到图4，在方块406处，根据所选参数涂布制品。热喷涂技术及等离子体喷涂技术可熔化材料(例如，陶瓷粉末)及使用所选参数将熔化后的材料喷涂至制品上。热喷涂或等离子体喷涂的陶瓷涂层可具有约5-40密耳(例如，在一个实施例中25密耳)的厚度。在一个实例中，根据复合陶瓷涂层的腐蚀速率选择厚度以确保制品具有至少大约5000射频小时(Radio Frequency Hours；RFHrs)的可用寿命。换言之，若复合陶瓷涂层的腐蚀速率为约0.005密耳/小时，则为获得约5000RF小时的可用寿命，可形成具有约25密耳的厚度的陶瓷涂层。
可多次喷涂执行等离子体喷涂工艺。对于每一次执行，可改变等离子体喷涂喷嘴的角度以维持与正经喷涂的表面的相对角度。举例而言，可旋转等离子体喷涂喷嘴以与正经喷涂的制品的表面维持大约45度至大约90度的角度。
在一个实施例中，可最佳化等离子体喷涂序列以实现改良的涂层(例如，较少的孔隙率、减少的表面节结及减小的表面粗糙度)以及减少涂层表面上杂散粒子(主要来自制品的后侧涂层)的再沉积。图8图示用于诸如等离子体筛的复杂部分的经最佳化的喷涂序列的一个示例。第一，如方块801中所示，以45度角喷涂(或涂布)制品806(例如，等离子体筛，在图8中图示该等离子体筛的部分横断面视图)的前侧820，通过在制品806旋转的同时水平807移动喷涂系统805(例如，等离子体喷涂系统)跨越制品806，以使得喷涂是多向809。在此处，制品806的前侧820是当制品806安装于用于半导体制造的腔室内时制品806上将面向等离子体喷涂系统的侧面。第二，如方块802中所示，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁垂直808移动喷涂系统805，以使得喷涂是单向810。第三，如方块803中所示，在翻转制品806后，通过以下步骤以45度角喷涂(或涂布)制品806的后侧824：在制品806旋转的同时水平807移动喷涂系统805跨越制品806，以使得喷涂是多向809。第四，在方块804处，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁垂直808移动喷涂系统805，以使得喷涂是单向810。
在一示例中，涂层可高达约8密耳厚度。然而，因为在针对每一侧面的单一涂层操作中较厚地涂覆涂层，未适当黏着的涂层可沿制品的边缘积累，使得涂层粒子在制造期间可位移及降低晶圆上粒子性能。进一步，因为在来自后侧涂层的前侧(该侧在蚀刻期间面向等离子体)回圈粒子可松散地黏着于制品的前侧上的涂层的后涂布后侧，使得涂层粒子在制造期间可位移及亦降低晶圆上粒子性能。
图9图示根据一个实施例喷涂制品(例如，等离子体筛)的方法900。在根据一个实施例的喷涂序列中，例如，连续改良工艺(continued improvement process；CIP)#1(在操作902中，如图8的方块803中所示)，通过以下步骤以45度角喷涂(或涂布)制品806的后侧824：在制品806旋转的同时垂直807于制品806的旋转轴(例如，水平地)移动喷涂系统805(例如，等离子体喷枪)跨越制品806，以使得喷涂是多向809。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作904中，如方块802中所示，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁平行808于制品806的旋转轴(例如，垂直地)移动喷枪805，以使得喷涂是单向810。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作906中，如方块801中所示，翻转制品806，且通过以下步骤以45度角喷涂(或涂布)制品806的前侧820：在制品806旋转的同时垂直807于制品806的旋转轴(例如，水平地)移动喷涂系统805跨越制品806，以使得喷涂是多向809。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作908中，如方块802中所示，通过以下步骤再次喷涂(或涂布)制品806的外径：在制品806旋转的同时于制品806旁平行808于制品的旋转轴(例如，垂直地)移动喷涂系统805，以使得喷涂是单向810。
在方块909处，决定是否重复方块902-908的序列。在一个实施例中，重复该序列一次。若将重复该序列，工艺返回至方块902，且以翻转制品、操作902、操作904、翻转制品、操作906及操作908的序列继续喷涂。若在方块909处不将重复方块902-908的操作，则以翻转制品、在操作910处涂布制品的后侧、翻转制品及在操作912处涂布制品的前侧的序列继续喷涂。
由于外径的喷涂次数比前侧及后侧的喷涂次数更少，前侧及后侧上的涂层比外径上的涂层更厚，因此制品的边缘处的涂层存在的积累较少。进一步，由于多层涂覆涂层，制品的边缘处的涂层亦不太可能存在积累。制品的边缘处减少的积累改良了粒子性能，因为制品的边缘处存在较少的不适宜黏着涂层，自该涂层粒子可位移。进一步，由于最后涂布前侧(该侧在蚀刻期间面向等离子体)，涂层的表面不太可能具有来自其他表面的涂层的回圈粒子不适宜地黏着，该等粒子可位移及降低粒子性能。
根据一个实施例的另一喷涂序列(例如，CIP#2)包括操作902、操作904、操作906、翻转制品806及操作908。在此处，并未重复操作902、操作904、操作906及操作908。确切而言，可以翻转制品806、操作902、操作904、翻转制品806及操作906的序列继续喷涂。接下来，可以翻转制品806、操作902、翻转制品806及操作906的序列继续喷涂。CIP#2不同于CIP#1，因为在CIP#2中涂布制品的外径的次数比在CIP#1中的次数更少。
由于外径的喷涂次数比前侧及后侧的喷涂次数更少，在一个实施例中，前侧及后侧上的涂层可比外径上的涂层更厚，使得制品的边缘处的涂层存在的积累较少。进一步，由于多层涂覆涂层，制品的边缘处的涂层亦不太可能存在积累。制品的边缘处减少的积累改良了粒子性能，因为制品的边缘处存在较少的不适宜黏着涂层，自该涂层粒子可位移。进一步，由于最后涂布前侧(该侧在蚀刻期间面向等离子体)，涂层的表面不太可能具有不适宜地黏着的来自其他表面的涂层的回圈粒子，该等粒子可位移及降低晶圆上粒子性能。
再参看图4，在方块408处，可执行等离子体涂层特性化。此举可包括决定表面形态、粗糙度、孔隙率、识别表面节结等等。举例而言，图10图示三个放大倍数1000x、4000x及10000x的涂层的三个示例(第一原型、CIP#1及CIP#2)的SEM视图。在此实例中，CIP#2显示了具有较低粗糙度及较少表面节结的更佳表面形态。又，图11图示涂层实例的横截面的SEM视图，在该图中以2000x放大倍数计数沿一英寸样本的节结数目。在此示例中，CIP#2显示较少表面节结。
前文的描述阐明了诸如特定系统、组件、方法等示例的众多特定细节，以便提供对本揭示案的多个实施例的良好理解。然而，对本领域技术人员应将显而易见的是，可在无该等特定细节的情况下实施本揭示案的至少一些实施例。在其他实例中，并未详细描述熟知组件或方法或仅以简单方块图形式呈现该等组件或方法，以免不必要地模糊本揭示案。因此，本文所阐明的特定细节仅为示例性。特定实施例可自该等示例性细节而变化，且仍应包含于本揭示案的范畴内。
贯穿本说明书中对“一个实施例”或“一实施例”的引用意谓结合实施例所描述的特定特征、结构或特性包括在至少一个实施例中。因此，在本说明书中多处出现的片语“在一个实施例中”或“在一实施例中”不一定全部指示相同实施例。另外，术语“或”意欲表示包容性“或”，而非排他性“或”。
尽管以特定次序图示及描述本文中方法的操作，但可改变每一方法的操作次序，使得可以相反次序执行某些操作或可至少部分地与其他操作同时执行某些操作。在另一实施例中，可以间歇性及/或交替性方式执行不同操作的指令或子操作。
应了解，上文的描述意欲为说明的目的，而非限定。许多其他实施例对于阅读及理解上文的描述后本领域技术人员将显而易见。因此，应参考随附权利要求书决定本揭示案的范畴，以及该等权利要求书授权的等效物的完整范畴。

Claims (15)

1.一种用于半导体处理腔室的制品，所述制品包含：
Al、Al2O3或SiC中的至少一者的主体；以及
所述主体上的陶瓷涂层，所述陶瓷涂层包含化合物，所述化合物包含自约50摩尔％至约75摩尔％的范围内的Y2O3、自约10摩尔％至约30摩尔％的范围内的ZrO2及自约10摩尔％至约30摩尔％的范围内的Al2O3，其中每英寸节结的数目在自约30个节结至约45个节结的范围内且孔隙率在自约2.5％至约3.2％的范围内。
2.如权利要求1所述的制品，其特征在于，粗糙度自约220微英寸至约250微英寸。
3.如权利要求1所述的制品，其特征在于，在所述主体的前侧及所述主体的后侧上的所述陶瓷涂层比在所述主体的外径上的所述陶瓷涂层更厚。
4.如权利要求1所述的制品，其特征在于，所述陶瓷涂层包含约62.93摩尔％的Y2O3、约23.13摩尔％的ZrO2及约13.94摩尔％的Al2O3。
5.一种用于半导体处理腔室的制品，所述制品包含：
Al、Al2O3或SiC中的至少一者的主体；以及
所述主体上的陶瓷涂层，所述陶瓷涂层包含Y4Al2O9(YAM)的化合物及Y2-xZrxO3的固溶体，其中通过一种方法将所述陶瓷涂层涂覆于所述主体上，所述方法包含：
提供具有在约90A至约150A的范围内的等离子体电流的等离子体喷涂系统；
在距离所述主体约60mm与约120mm之间处安置所述等离子体喷涂系统的喷灯支架；
使得气体以约80升/分钟与约130升/分钟之间的速率流过所述等离子体喷涂系统；以及
用陶瓷涂层等离子体喷涂所述制品。
6.如权利要求5所述的制品，其特征在于，安置所述等离子体喷涂系统的所述喷灯支架与所述主体的距离处于约60mm与约120mm之间。
7.如权利要求5所述的制品，其特征在于，所述气体以约90升/分钟与约130升/分钟之间的速率流过所述等离子体喷涂系统。
8.如权利要求5所述的制品，其特征在于，在所述主体的前侧及所述主体的后侧上的所述涂层比在所述制品的外径上的所述涂层更厚。
9.如权利要求5所述的制品，其特征在于，所述涂层的节结计数为每英寸约30个节结至约45个节结，所述涂层的粗糙度为约220微英寸至约250微英寸，以及所述涂层的横断面孔隙率为约2.5％至约3.2％。
10.一种方法，所述方法包含以下步骤：
提供具有在约90A至约150A的范围内的等离子体电流的等离子体喷涂系统；
在距离主体约60mm与约120mm之间处安置所述等离子体喷涂系统的喷灯支架；
使得气体以约80升/分钟与约130升/分钟之间的速率流过所述等离子体喷涂系统；以及
用陶瓷涂层等离子体喷涂所述主体，其中所述陶瓷涂层包含Y4Al2O9(YAM)的化合物及Y2-xZrxO3的固溶体。
11.如权利要求10所述的方法，其特征在于，安置所述等离子体喷涂系统的所述喷灯支架与所述主体的距离处于约60mm与约120mm之间。
12.如权利要求10所述的方法，其特征在于，所述气体以约90升/分钟与约130升/分钟之间的速率流过所述等离子体喷涂系统。
13.如权利要求10所述的方法，所述方法进一步包含以下步骤：
将包含氧化钇的粉末馈送入所述等离子体喷涂系统中，其中约50％的所述粉末具有小于约15微米的直径。
14.如权利要求10所述的方法，其特征在于，所述等离子体喷涂的步骤包含通过以下步骤涂覆一或更多个涂层：
涂布所述主体的后侧，其中随着所述等离子体喷涂系统垂直于所述主体的旋转轴移动，以相对于所述旋转主体大约45度角涂覆所述涂层，且所述后侧涂层具有约2密耳的厚度；
涂布所述主体的外径，其中随着所述等离子体喷涂系统平行于所述主体的所述旋转轴移动，相对于所述旋转主体水准涂覆所述涂层，且以约2密耳的厚度涂覆所述外径涂层；以及
涂布所述主体的前侧，其中随着所述等离子体喷涂系统垂直于所述主体的旋转轴移动，翻转所述主体及以相对于所述旋转主体大约45度角涂覆所述涂层，且以约2密耳的厚度涂覆所述前侧涂层。
15.如权利要求10所述的方法，其特征在于，所述主体包含用于半导体处理腔室且与还原性化学品一起使用的等离子体筛，其中所述等离子体筛包含Al、Al2O3或SiC中的至少一者。
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