CN107516645A - 针对先进元件的晶圆上粒子性能的化学相容性涂层材料 - Google Patents

针对先进元件的晶圆上粒子性能的化学相容性涂层材料 Download PDF

Info

Publication number
CN107516645A
CN107516645A CN201710717962.2A CN201710717962A CN107516645A CN 107516645 A CN107516645 A CN 107516645A CN 201710717962 A CN201710717962 A CN 201710717962A CN 107516645 A CN107516645 A CN 107516645A
Authority
CN
China
Prior art keywords
coating
main body
product
plasma spray
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710717962.2A
Other languages
English (en)
Other versions
CN107516645B (zh
Inventor
J·Y·孙
B·P·卡农戈
D·卢博米尔斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN107516645A publication Critical patent/CN107516645A/zh
Application granted granted Critical
Publication of CN107516645B publication Critical patent/CN107516645B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5042—Zirconium oxides or zirconates; Hafnium oxides or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5045—Rare-earth oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y10T428/12604—Film [e.g., glaze, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12625—Free carbon containing component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24355—Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.]
    • Y10T428/24372—Particulate matter
    • Y10T428/24413—Metal or metal compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/252—Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/256—Heavy metal or aluminum or compound thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Composite Materials (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明涉及针对先进元件的晶圆上粒子性能的化学相容性涂层材料。为了针对一种用于半导体处理腔室的制品制造涂层，该制品包括Al、Al2O3或SiC中的至少一者的主体及主体上的陶瓷涂层。陶瓷涂层包括一化合物，该化合物包含自约50摩尔％至约75摩尔％范围内的Y2O3、自约10摩尔％至约30摩尔％范围内的ZrO2及自约10摩尔％至约30摩尔％范围内的Al2O3，其中每英寸节结的数目处于自约30个节结至约45个节结的范围内且孔隙率处于自约2.5％至约3.2％的范围内。

Description

针对先进元件的晶圆上粒子性能的化学相容性涂层材料
本申请是申请日为2013年7月26日、申请号为201380039967.4、题为“针对先进元件的晶圆上粒子性能的化学相容性涂层材料”的分案申请。
技术领域
本揭示案的实施例大体而言是关于陶瓷涂布制品及是关于一种用于向介电蚀刻处理组件涂覆陶瓷涂层的工艺。
背景技术
在半导体工业中，通过众多用于生产尺寸日益缩小的结构的制造工艺来制造元件。一些制造工艺(诸如等离子体蚀刻及等离子体清洗工艺)将基板曝露于高速等离子体流中，以蚀刻或清洗基板。等离子体可为强腐蚀性，且可腐蚀处理腔室及其他曝露于等离子体的表面。此腐蚀可产生经常污染正经处理的基板的粒子，从而导致元件缺陷。
随着元件几何形状缩小，对缺陷的易感性增加且粒子污染物要求变得更加严格。因此，随着元件几何形状缩小，可降低粒子污染的容许水准。为了最小化由等离子体蚀刻工艺及/或等离子体清洗工艺引入的粒子污染，已经开发出抗等离子体的腔室材料。不同材料提供不同材料特性，诸如等离子体抗性、刚性、弯曲强度、耐热冲击性等等。又，不同材料具有不同材料成本。因此，一些材料具有优良的等离子体抗性，其他材料具有较低成本，而还有其他材料具有优良的弯曲强度及/或耐热冲击性。
附图说明
在附图的诸图中以示例的方式(而非以限定的方式)图示本发明，在这些附图中，类似元件符号指示相似元件。应注意，对本揭示案中的“一”或“一个”实施例的不同引用不一定指示相同实施例，且此种引用意谓至少一者。
图1图示衬垫套件的横断面视图。
图2图示制造系统的示例性架构。
图3图示等离子体喷涂系统的横断面视图。
图4图示根据一个实施例的向制品涂覆涂层的方法。
图5图示用于涂层的粉末形状。
图6A图示用于涂层的粉末尺寸分布。
图6B图示根据一个实施例的用于涂层的粉末尺寸分布。
图7A图示根据一个实施例的涂层的节结计数。
图7B图示根据一个实施例的涂层的表面粗糙度。
图7C图示根据一个实施例的涂层的横断面孔隙率。
图8图示涂层的涂覆。
图9图示根据一个实施例的涂覆涂层的方法。
图10图示涂层表面的扫描式电子显微镜(scanning electron microscope；SEM)视图。
图11图示涂层的横断面的SEM视图。
图12A图示随时间流逝的涂层的粒子性能。
图12B图示根据一个实施例的涂层的粒子性能。
具体实施方式
本发明的实施例是针对一种制品(例如，等离子体筛、衬垫套件、淋喷头、盖、静电卡盘或用于半导体处理腔室的曝露于还原性等离子体化学品中的其他腔室组件，该制品包括Al或Al2O3或SiC基板)及制品上的陶瓷涂层。在一个实施例中，陶瓷涂层是复合陶瓷，包括Y4Al2O9(YAM)的化合物及Y2-xZrxO3的固溶体，其中该陶瓷涂层耐还原性化学品(H2、CO、COS、CH4等等)。
在制品上涂布陶瓷涂层的方法包括以下步骤：提供具有在约90A至约150A范围内的等离子体电流的等离子体喷涂系统；及在距离制品约60mm与约120mm之间处安置等离子体喷涂系统的喷灯支架。该方法亦包括以下步骤：使得气体以约80公升/分钟与约130公升/分钟之间的速率流过等离子体喷涂系统；及用陶瓷涂层等离子体喷涂制品。
导体蚀刻工艺涉及通过气体混合物的导电基板(诸如Si晶圆)的等离子体辅助蚀刻。在导体蚀刻中，晶圆上水准粒子性能主要与腔室关键组件相关联，尤其是与具有前侧120、后侧122及外径124的衬垫套件100相关联，该衬垫套件100可包括腔室主体111、上衬垫101、缝隙阀门103、等离子体筛105(亦即，围绕晶圆的类格栅结构)、下衬垫107及阴极衬垫109，如图1所示。上衬垫101、缝隙阀门103及下衬垫107较接近于腔室主体111，而等离子体筛105围绕晶圆(未图示，但是在操作期间位于位置130处)且阴极衬垫109位于晶圆下方。
标准衬垫套件可由涂有8-12密耳的等离子体喷涂Y2O3(氧化钇)或其他陶瓷且具有约100-270微英寸(μin)的表面粗糙度的Al基板组成。对于大多数典型半导体涂覆，晶圆上粒子规格是在大于或等于90nm粒子尺寸处约30个附加物(例如，位于晶圆上的杂散粒子)的最大值。标准Y2O3衬垫套件符合此晶圆上粒子规格。
针对28nm元件节点处的特定先进涂覆，晶圆上粒子规格在大于或等于45nm尺寸处小于或等于1.3个附加物时更加严格。此外，该等涂覆可使用经常增加晶圆上粒子污染的还原性化学品(H2、CH4、CO、COS等等)。在还原性化学品下使用习知Y2O3涂布衬垫套件的腔室测试展示高晶圆上粒子(例如，在大于或等于45nm粒子尺寸处约50至100个或更多个附加物)，但是显著的腔室干燥(seasoning，例如，100至150个射频RF处理小时)可在大于或等于45nm尺寸处将粒子缺陷水准降低至约0至10个附加物，以便在生产可继续前满足生产规格。然而，长时间腔室干燥可降低生产力。在测试中，能量分散的X射线光谱学已证实习知基于Y2O3的晶圆上粒子可来源于衬垫套件。
进一步，Y2O3涂层在还原性化学品(例如，H2、CH4、CO、COS等等)下稳定性较低及形成明显的Y-OH。Y-OH转换导致容积变化，从而导致流出可于晶圆上发现的粒子。然而，在无还原性化学品的情况下，Y2O3为稳定的且不会流出粒子。
本发明的实施例包括复合陶瓷涂层材料以增加与还原性化学品使用的相容性，以便改良半导体工业应用中针对腔室组件的晶圆上粒子性能。举例而言，在衬垫套件涂覆中，可使用等离子体喷涂技术将复合陶瓷涂层(例如，基于氧化钇的复合陶瓷涂层)涂覆于衬垫套件的面向等离子体的侧面。在其他实施例中，可经由气溶胶沉积、浆料等离子体或其他适宜技术(诸如其他热喷涂技术)涂覆复合陶瓷涂层。在一个实例中，铝衬垫套件上的涂层厚度可高达25密耳。在另一实例中，涂层的热膨胀系数(coefficient of thermalexpansion；CTE)更好地与基板的CTE相匹配的Al2O3或其他金属氧化物基板可具有较厚涂层。
在一个实施例中，复合陶瓷涂层由化合物Y4Al2O9(YAM)及固溶体Y2-xZrxO3(Y2O3-ZrO2固溶体)组成。在另一实施例中，复合陶瓷涂层包括62.93摩尔％的Y2O3、23.23摩尔％的ZrO2及13.94摩尔％的Al2O3。在又一实施例中，复合陶瓷涂层可包括在50摩尔％-75摩尔％的范围内的Y2O3、在10摩尔％-30摩尔％的范围内的ZrO2及在10摩尔％-30摩尔％的范围内的Al2O3。在其他实施例中，其他分配亦可用于复合陶瓷涂层。在一个实施例中，复合陶瓷是含有氧化钇的固溶体，该固溶体可与ZrO2、Al2O3、HfO2、Er2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3或前述物质的组合中的一或更多者混合。
在各种涂层测试期间，在无CO及H2(非还原性化学品)情况下及有CO及H2(亦即，在还原性化学品下)情况下观察晶圆上粒子水准。与所测试的其他涂层及块体材料(例如，块体Y2O3、等离子体喷涂的(PS)Y2O3、SiC、柱状Si、单晶Si及SiO2)相比，复合陶瓷涂层呈现较好的抗腐蚀性，尤其是在与还原性化学品一起的情况下，此情况展示出与所测试的其他涂层相比复合陶瓷涂层的较低腐蚀速率(每RFhr的腐蚀深度)。举例而言，图12A图示随RF小时数变化针对>45nm粒子的Y2O3涂层的晶圆上粒子性能。在此处，涂层展示在初始阶段(例如，小于20RF小时)的高数目的YO粒子及需要80至100RF小时达到稳定粒子数目。图12B图示随RF小时数变化针对45nm粒子的复合陶瓷涂层的晶圆上粒子性能，在此处涂层并未展示在干燥期间的高数目的YO粒子且YO粒子的数目在60RF小时处一致较低(亦即，小于5个附加物)。
图2图示制造系统200的示例性架构。制造系统200可为涂层制造系统(例如，用于对诸如衬垫套件的制品涂覆复合陶瓷涂层)。在一个实施例中，制造系统200包括连接至设备自动化层215的处理设备201。处理设备201可包括珠粒喷击器202、一或更多个湿式清洗器203、等离子体喷枪系统204及/或其他设备。制造系统200可进一步包括连接至设备自动化层215的一或更多个计算元件220。在替代实施例中，制造系统200可包括更多或更少组件。举例而言，制造系统200可包括人工作业(例如，线下)的处理设备201，而不包括设备自动化层215或计算元件220。
珠粒喷击器202是经配置以粗化制品(例如，衬垫套件)的表面的机器。珠粒喷击器202可为珠粒喷击箱、手持型珠粒喷击器或其他类型珠粒喷击器。珠粒喷击器202可通过利用珠粒或粒子轰击基板来粗化基板。在一个实施例中，珠粒喷击器202在基板上发射陶瓷珠粒或粒子。由珠粒喷击器202实现的粗糙度可基于发射珠粒所使用的力、珠粒材料、珠粒尺寸、珠粒喷击器与基板之间的距离、处理持续时间等等。在一个实施例中，珠粒喷击器使用一系列珠粒尺寸以粗化陶瓷制品。
在替代实施例中，可使用除珠粒喷击器202以外的其他类型的表面粗化器。举例而言，可使用机动研磨垫以粗化陶瓷基板的表面。砂磨器可在研磨垫压抵制品的表面的同时旋转或振动研磨垫。通过研磨垫实现的粗糙度可取决于所施加的压力、振动或旋转速率及/或研磨垫的粗糙度。
湿式清洗器203是使用湿式清洗工艺清洗制品(例如，衬垫套件)的清洗装置。湿式清洗器203包括装满液体的湿式浸洗槽，将基板浸入该等槽中以清洗基板。湿式清洗器203可在清洗期间使用超音波搅动湿式浸洗槽以改良清洗功效。在本文中将此工艺称为超音波处理湿式浸洗槽。在其他实施例中，可使用诸如干式清洗器的替代类型清洗器来清洗制品。干式清洗器可通过施加热、气体、等离子体等等来清洗制品。
陶瓷涂布机204是经配置以向基板的表面涂覆陶瓷涂层的机器。在一个实施例中，陶瓷涂布机204为等离子体喷涂器(或等离子体喷涂系统)，该等离子体喷涂器对基板(例如，衬垫套件)上等离子体喷涂涂层(例如，复合陶瓷涂层)。在替代实施例中，陶瓷涂布机204可应用其他热喷涂技术，诸如可使用爆震喷涂、线电弧喷涂、高速氧气燃料(highvelocity oxygen fuel；HVOF)喷涂、火焰喷涂、温喷涂及冷喷涂。另外，陶瓷涂布机204可执行其他涂布工艺，诸如可使用气溶胶沉积、电镀、物理气相沉积(physical vapordeposition；PVD)及化学气相沉积(chemical vapor deposition；CVD)以形成陶瓷涂层。
设备自动化层215可将一些或所有制造机器201与计算元件220、与其他制造机器、与计量工具及/或其他元件互连。设备自动化层215可包括网络(例如，局域网(locationarea network；LAN))、路由器、网关、服务器、数据储存器等等。制造机器201可经由SEMI设备通讯标准/通用设备模型(SEMI Equipment Communications Standard/GenericEquipment Model；SECS/GEM)介面、经由以太网介面及/或经由其他介面连接至设备自动化层215。在一个实施例中，设备自动化层215使得工艺资料(例如，由制造机器201在工艺操作期间收集的数据)能够储存在数据储存器(未图示)中。在替代实施例中，计算元件220直接连接至制造机器201中的一或更多者。
在一个实施例中，一些或所有制造机器201包括可编程控制器，该控制器可载入、储存及执行工艺配方。可编程控制器可控制制造机器201的温度设定、气体及/或真空设定、时间设定等等。可编程控制器可包括主存储器(例如，只读存储器(read-only memory；ROM)、快闪存储器、动态随机存取存储器(dynamic random access memory；DRAM)、静态随机存取存储器(static random access memory；SRAM)等等)及/或二级存储器(例如，诸如磁盘驱动器的数据储存装置)。主存储器及/或二级存储器可储存用于执行本文所描述的热处理工艺的指令。
可编程控制器亦可包括处理元件，该处理元件耦接至主存储器及/或二级存储器(例如，经由总线耦接)以执行指令。处理元件可为通用处理元件，诸如微处理器、中央处理单元或类似装置。处理元件亦可为专用处理元件，诸如专用集成电路(applicationspecific integrated circuit；ASIC)、现场可编程门阵列(field programmable gatearray；FPGA)、数字信号处理器(digital signal processor；DSP)、网络处理器或类似装置。在一个实施例中，可编程控制器为可编程逻辑控制器(programmable logiccontroller；PLC)。
在一个实施例中，制造机器201经编程以执行配方，该等配方将使得制造机器粗化基板、清洗基板及/或制品、涂布制品及/或加工(例如，研磨或抛光)制品。在一个实施例中，制造机器201经编程以执行配方，该等配方执行用于制造陶瓷涂布制品的多操作工艺的操作，如参考以下图式所描述。计算元件220可储存可下载至制造机器201的一或更多个陶瓷涂层配方225，以使得制造机器201制造根据本揭示案的实施例的陶瓷涂布制品。
图3图示用于在介电蚀刻元件或腐蚀系统中所使用的其他制品(例如，衬垫套件)上等离子体喷涂涂层的系统300的横断面视图。系统300是一种热喷涂系统。在等离子体喷涂系统300中，电弧302形成于阳极304与阴极316此两个电极之间，气体318从该等电极之间流过。在等离子体喷涂系统300中适宜使用的气体示例包括(但不限于)氩/氢、氩/氦或氩/氧。随着电弧302加热气体，气体膨胀及加速穿过成形喷嘴306，从而产生高速等离子体流。
将粉末308注入等离子体喷涂或喷灯中，在该装置中极高的温度熔化粉末及推动该材料成为奔向制品310的熔化粒子314流。在冲击制品310之后，熔化粉末变平、迅速凝固、并形成涂层312，该涂层黏着于制品310。影响涂层312的厚度、密度及粗糙度的参数包括粉末类型、粉末尺寸分布、粉末馈送速率、等离子体气体组成、气体流动速率、能量输入、喷灯偏移距离及基板冷却。
图4是图示根据一实施例用于制造涂布制品的工艺400的流程图。可通过各种制造机器执行工艺400的操作。将参考如上文所描述的任何制品来描述工艺400的操作，该等工艺的操作可用于反应性离子蚀刻或等离子体蚀刻系统中。
在方块402处，最佳化用于等离子体喷涂涂层的粉末。此举可包括针对复合陶瓷涂层的粉末形状及尺寸分布的最佳化。在一个实施例中，最佳化涂层包括(但不限于)决定粉末类型(例如，化学成分)、平均粉末尺寸及粉末馈送速率。可选择粉末类型以产生如先前所描述的复合陶瓷涂层。选择具有规定组合物、纯度及尺寸的原料陶瓷粉末。陶瓷粉末可由Y2O3、Y4Al2O9、Y3Al5O12(YAG)或其他含有氧化钇的陶瓷形成。另外，陶瓷粉末可与ZrO2、Al2O3、HfO2、Er2O3、Nd2O3、Nb2O5、CeO2、Sm2O3、Yb2O3或其他氧化物中的一或更多者结合。随后混合原料陶瓷粉末。在一个实施例中，将Y2O3、Al2O3及ZrO2的原料陶瓷粉末混合在一起用于复合陶瓷涂层。该等原料陶瓷粉末可具有99.9％的纯度或在一个实施例中纯度更高。原料陶瓷粉末可使用(例如)球磨混合。在混合陶瓷粉末后，可在规定煅烧时间及温度下煅烧该等陶瓷粉末。
图5图示根据一个实施例用于涂层的经最佳化的粉末粒子形状。在此处，一些粒子具有球形，在球体相对侧上具有深凹痕。换言之，大部分粒子具有环形。对由具有环形的粒子的粉末形成的涂层的评估展示出与其他形状的粉末粒子相比较具有改良后的形态及孔隙率。举例而言，由于粉末的熔化改良、粗糙度减小及孔隙率降低，由具有环形的粒子形成的涂层倾向于具有较少节结及较多长条，所有该等因素导致晶圆上粒子性能改良。
图6A图示针对粉末的粉末尺寸分布长条图，基于粉末涂布成涂层时涂层表面形态及孔隙率评估该粉末。在图6A中，50％的粒子的尺寸(亦即，粒径，D50)为约25微米或更小。图6B图示根据一实施例针对粉末的经最佳化的粉末尺寸分布长条图，亦基于粉末涂布成涂层时涂层表面形态及孔隙率评估该粉末。在图6B中，50％的粒子的尺寸(D50)小于或等于约15微米。对由具有50％的粒子的尺寸为约25微米或更小的粉末形成的涂层的评估(如图6A所示)展示出与具有较大尺寸的粉末相比较具有改良后的形态及孔隙率，该改良形态及孔隙率两者皆导致晶圆上粒子性能改良。
回到图4，在方块404处，等离子体喷涂参数经最佳化以最大化粉末的熔化，减少表面节结的数目，增加长条表面，减小粗糙度及降低孔隙率。在一个实施例中，最佳化等离子体喷涂参数包括(但不限于)决定等离子体喷枪功率及喷射载体气体的组合物。最佳化等离子体喷涂参数亦可包括最佳化喷涂涂层序列及最佳化用于在基板(例如，等离子体筛)上方涂覆涂层(例如，复合陶瓷涂层)的工艺条件。
举例而言，表A展示涂布工艺最佳化(例如，正交阵列评估)以评定及识别修正涂层参数对涂层表面形态的影响(例如，节结对比长条)。
在此处，在图7A、图7B及图7C中图示评估结果的实例。图7A图示针对每一参数的每一水准的200x放大照片(例如，一英寸样本的200x扫描式电子显微照相(SEM))上节结的数目。在一个示例中，水准1的主要气体流动速率(80升/分钟)造成的节结数目(约60个)比水准2的主要气体流动速率(90升/分钟)造成的节结数目(约45个)更多。进一步，水准2的主要气体流动速率造成的节结数目比水准3的主要气体流动速率(130升/分钟)造成的节结数目(约43个)更多。
在另一示例中，水准1的喷灯支架距离(60mm)造成的节结数目(约39个)比水准2的喷灯支架距离(80mm)造成的节结数目(约58个)更少。进一步，水准2的喷灯支架距离造成的节结数目比水准3的喷灯支架距离(120mm)造成的节结数目(约61个)更少。
图7B图示针对每一参数的每一水准的复合陶瓷涂层的平均表面粗糙度(Ra)(以微英寸表示)。在一个实例中，等离子体电流水准1(90A)造成的粗糙度(约260微英寸)比等离子体电流水准2造成的粗糙度(约255微英寸)更大。进一步，等离子体电流水准2(110A)造成的粗糙度比等离子体电流水准3(150A)造成的粗糙度(约250微英寸)更大。
图7C图示针对每一参数的每一水准的复合陶瓷涂层的横断面孔隙率(以百分比表示)。在一个示例中，水准1的主要气体流动速率(80升/分钟)造成的孔隙率(约4.2％)比水准2的主要气体流动速率(90升/分钟)造成的孔隙率(约3.4％)更大。进一步，水准2的主要气体流动速率造成的孔隙率比水准3的主要气体流动速率(130升/分钟)造成的孔隙率(约2.6％)更大。
在一个实施例中，参数经最佳化以最大化熔化，减少节结的数目(可指示粉末熔化中的增长)，增加长条表面(可指示粉末熔化中的增长)，减小表面粗糙度及降低涂层的孔隙率，该等结果将在还原性化学品下减少晶圆上粒子计数，因为粒子不太可能位移。表A的分析展示可最佳化涂层的参数水准是增加主要气体流动速率(例如，约130升/分钟)，增加等离子体电流(例如，约150A)，减小喷灯支架距离(例如，约60mm)及增加粉末的粒子直径(例如，50％的粒子的粒径约小于或等于25微米)。
举例而言，经最佳化的等离子体电流可在约90A至约150A范围内。进一步经最佳化的等离子体电流可在约110A至约150A的范围内。在另一示例中，等离子体喷涂系统的喷灯支架的经最佳化的定位可距离制品(例如，衬垫套件或等离子体筛)约60mm与约120mm之间。喷灯支架的进一步经最佳化的定位可距离制品约60mm与约90mm之间。在又另一示例中，经最佳化的气体可以约80升/分钟与约130升/分钟之间的速率流过等离子体喷涂系统。进一步经最佳化的气体可以约90升/分钟与约130升/分钟之间的速率流过等离子体喷涂系统。
在上文示例中，根据进一步经最佳化的参数在制品上所涂布的涂层可具有每英寸约30个节结至约45个节结的节结计数、约220微英寸至约250微英寸的粗糙度及约2.5％至约3.2％的横断面孔隙率。
再回到图4，在方块406处，根据所选参数涂布制品。热喷涂技术及等离子体喷涂技术可熔化材料(例如，陶瓷粉末)及使用所选参数将熔化后的材料喷涂至制品上。热喷涂或等离子体喷涂的陶瓷涂层可具有约5-40密耳(例如，在一个实施例中25密耳)的厚度。在一个实例中，根据复合陶瓷涂层的腐蚀速率选择厚度以确保制品具有至少大约5000射频小时(Radio Frequency Hours；RFHrs)的可用寿命。换言之，若复合陶瓷涂层的腐蚀速率为约0.005密耳/小时，则为获得约5000RF小时的可用寿命，可形成具有约25密耳的厚度的陶瓷涂层。
可多次喷涂执行等离子体喷涂工艺。对于每一次执行，可改变等离子体喷涂喷嘴的角度以维持与正经喷涂的表面的相对角度。举例而言，可旋转等离子体喷涂喷嘴以与正经喷涂的制品的表面维持大约45度至大约90度的角度。
在一个实施例中，可最佳化等离子体喷涂序列以实现改良的涂层(例如，较少的孔隙率、减少的表面节结及减小的表面粗糙度)以及减少涂层表面上杂散粒子(主要来自制品的后侧涂层)的再沉积。图8图示用于诸如等离子体筛的复杂部分的经最佳化的喷涂序列的一个示例。第一，如方块801中所示，以45度角喷涂(或涂布)制品806(例如，等离子体筛，在图8中图示该等离子体筛的部分横断面视图)的前侧820，通过在制品806旋转的同时水平807移动喷涂系统805(例如，等离子体喷涂系统)跨越制品806，以使得喷涂是多向809。在此处，制品806的前侧820是当制品806安装于用于半导体制造的腔室内时制品806上将面向等离子体喷涂系统的侧面。第二，如方块802中所示，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁垂直808移动喷涂系统805，以使得喷涂是单向810。第三，如方块803中所示，在翻转制品806后，通过以下步骤以45度角喷涂(或涂布)制品806的后侧824：在制品806旋转的同时水平807移动喷涂系统805跨越制品806，以使得喷涂是多向809。第四，在方块804处，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁垂直808移动喷涂系统805，以使得喷涂是单向810。
在一示例中，涂层可高达约8密耳厚度。然而，因为在针对每一侧面的单一涂层操作中较厚地涂覆涂层，未适当黏着的涂层可沿制品的边缘积累，使得涂层粒子在制造期间可位移及降低晶圆上粒子性能。进一步，因为在来自后侧涂层的前侧(该侧在蚀刻期间面向等离子体)回圈粒子可松散地黏着于制品的前侧上的涂层的后涂布后侧，使得涂层粒子在制造期间可位移及亦降低晶圆上粒子性能。
图9图示根据一个实施例喷涂制品(例如，等离子体筛)的方法900。在根据一个实施例的喷涂序列中，例如，连续改良工艺(continued improvement process；CIP)#1(在操作902中，如图8的方块803中所示)，通过以下步骤以45度角喷涂(或涂布)制品806的后侧824：在制品806旋转的同时垂直807于制品806的旋转轴(例如，水平地)移动喷涂系统805(例如，等离子体喷枪)跨越制品806，以使得喷涂是多向809。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作904中，如方块802中所示，通过以下步骤喷涂(或涂布)制品806的外径822：在制品806旋转的同时于制品806旁平行808于制品806的旋转轴(例如，垂直地)移动喷枪805，以使得喷涂是单向810。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作906中，如方块801中所示，翻转制品806，且通过以下步骤以45度角喷涂(或涂布)制品806的前侧820：在制品806旋转的同时垂直807于制品806的旋转轴(例如，水平地)移动喷涂系统805跨越制品806，以使得喷涂是多向809。在一个实施例中，喷涂系统为固定的及制品为移动的。
在操作908中，如方块802中所示，通过以下步骤再次喷涂(或涂布)制品806的外径：在制品806旋转的同时于制品806旁平行808于制品的旋转轴(例如，垂直地)移动喷涂系统805，以使得喷涂是单向810。
在方块909处，决定是否重复方块902-908的序列。在一个实施例中，重复该序列一次。若将重复该序列，工艺返回至方块902，且以翻转制品、操作902、操作904、翻转制品、操作906及操作908的序列继续喷涂。若在方块909处不将重复方块902-908的操作，则以翻转制品、在操作910处涂布制品的后侧、翻转制品及在操作912处涂布制品的前侧的序列继续喷涂。
由于外径的喷涂次数比前侧及后侧的喷涂次数更少，前侧及后侧上的涂层比外径上的涂层更厚，因此制品的边缘处的涂层存在的积累较少。进一步，由于多层涂覆涂层，制品的边缘处的涂层亦不太可能存在积累。制品的边缘处减少的积累改良了粒子性能，因为制品的边缘处存在较少的不适宜黏着涂层，自该涂层粒子可位移。进一步，由于最后涂布前侧(该侧在蚀刻期间面向等离子体)，涂层的表面不太可能具有来自其他表面的涂层的回圈粒子不适宜地黏着，该等粒子可位移及降低粒子性能。
根据一个实施例的另一喷涂序列(例如，CIP#2)包括操作902、操作904、操作906、翻转制品806及操作908。在此处，并未重复操作902、操作904、操作906及操作908。确切而言，可以翻转制品806、操作902、操作904、翻转制品806及操作906的序列继续喷涂。接下来，可以翻转制品806、操作902、翻转制品806及操作906的序列继续喷涂。CIP#2不同于CIP#1，因为在CIP#2中涂布制品的外径的次数比在CIP#1中的次数更少。
由于外径的喷涂次数比前侧及后侧的喷涂次数更少，在一个实施例中，前侧及后侧上的涂层可比外径上的涂层更厚，使得制品的边缘处的涂层存在的积累较少。进一步，由于多层涂覆涂层，制品的边缘处的涂层亦不太可能存在积累。制品的边缘处减少的积累改良了粒子性能，因为制品的边缘处存在较少的不适宜黏着涂层，自该涂层粒子可位移。进一步，由于最后涂布前侧(该侧在蚀刻期间面向等离子体)，涂层的表面不太可能具有不适宜地黏着的来自其他表面的涂层的回圈粒子，该等粒子可位移及降低晶圆上粒子性能。
再参看图4，在方块408处，可执行等离子体涂层特性化。此举可包括决定表面形态、粗糙度、孔隙率、识别表面节结等等。举例而言，图10图示三个放大倍数1000x、4000x及10000x的涂层的三个示例(第一原型、CIP#1及CIP#2)的SEM视图。在此实例中，CIP#2显示了具有较低粗糙度及较少表面节结的更佳表面形态。又，图11图示涂层实例的横截面的SEM视图，在该图中以2000x放大倍数计数沿一英寸样本的节结数目。在此示例中，CIP#2显示较少表面节结。
前文的描述阐明了诸如特定系统、组件、方法等示例的众多特定细节，以便提供对本揭示案的多个实施例的良好理解。然而，对本领域技术人员应将显而易见的是，可在无该等特定细节的情况下实施本揭示案的至少一些实施例。在其他实例中，并未详细描述熟知组件或方法或仅以简单方块图形式呈现该等组件或方法，以免不必要地模糊本揭示案。因此，本文所阐明的特定细节仅为示例性。特定实施例可自该等示例性细节而变化，且仍应包含于本揭示案的范畴内。
贯穿本说明书中对“一个实施例”或“一实施例”的引用意谓结合实施例所描述的特定特征、结构或特性包括在至少一个实施例中。因此，在本说明书中多处出现的片语“在一个实施例中”或“在一实施例中”不一定全部指示相同实施例。另外，术语“或”意欲表示包容性“或”，而非排他性“或”。
尽管以特定次序图示及描述本文中方法的操作，但可改变每一方法的操作次序，使得可以相反次序执行某些操作或可至少部分地与其他操作同时执行某些操作。在另一实施例中，可以间歇性及/或交替性方式执行不同操作的指令或子操作。
应了解，上文的描述意欲为说明的目的，而非限定。许多其他实施例对于阅读及理解上文的描述后本领域技术人员将显而易见。因此，应参考随附权利要求书决定本揭示案的范畴，以及该等权利要求书授权的等效物的完整范畴。

Claims (15)

1.一种用于半导体处理腔室的制品，所述制品包含：
Al、Al2O3或SiC中的至少一者的主体；以及
所述主体上的陶瓷涂层，所述陶瓷涂层由具有环形的粒子的粉末形成，所述粉末包含Y2O3和ZrO2的混合物，其中所述陶瓷涂层的每英寸的节结数目在自约30个节结至45个节结的范围内且所述陶瓷涂层的孔隙率在自2.5％至3.2％的范围内。
2.如权利要求1所述的制品，其特征在于，所述陶瓷涂层的表面粗糙度自220微英寸至约250微英寸。
3.如权利要求1所述的制品，其特征在于，在所述主体的前侧及所述主体的后侧上的所述陶瓷涂层比在所述主体的外径上的所述陶瓷涂层更厚。
4.一种用于半导体处理腔室的制品，所述制品包含：
Al、Al2O3或SiC中的至少一者的主体；以及
所述主体上的陶瓷涂层，所述陶瓷涂层由具有环形的粒子的粉末形成，所述粉末包含Y2O3和ZrO2的混合物，其中所述陶瓷涂层通过一种方法涂覆于所述主体，该方法包括：
提供具有在90A至150A的范围内的等离子体电流的等离子体喷涂系统；
在距离所述主体60mm与120mm之间处安置所述等离子体喷涂系统的喷灯支架；
使得气体以80升/分钟与130升/分钟之间的速率流过所述等离子体喷涂系统；
将包含Y2O3和ZrO2的混合物的所述粉末馈送入所述等离子体喷涂系统中，其中所述粉末的大部分粒子具有环形，每个环形的粒子具有球形，在所述球形相对侧上具有深凹痕；以及
用陶瓷涂层对所述制品进行等离子体喷涂，其中与其他形状的粉末粒子相比较，由所述具有环形的粒子形成的所述陶瓷涂层具有改良后的形态及降低的孔隙率，其中改良后的表面形态包括表面节结的数量减少。
5.如权利要求4所述的制品，其特征在于，使得所述气体以90升/分钟与130升/分钟之间的速率流过所述等离子体喷涂系统。
6.如权利要求4所述的制品，其特征在于，在所述主体的前侧及所述主体的后侧上的所述涂层比在所述制品的外径上的所述涂层更厚。
7.如权利要求4所述的制品，其特征在于，所述涂层的节结计数为每英寸30个节结至45个节结，所述涂层的粗糙度为220微英寸至250微英寸，以及所述涂层的横断面孔隙率为2.5％至3.2％。
8.一种将陶瓷涂层涂覆于主体的方法，所述方法包含以下步骤：
提供具有在90A至150A的范围内的等离子体电流的等离子体喷涂系统；
在距离所述主体60mm与120mm之间处安置所述等离子体喷涂系统的喷灯支架；
使得气体以80升/分钟与130升/分钟之间的速率流过所述等离子体喷涂系统；
将包含Y2O3和ZrO2的混合物的粉末馈送入所述等离子体喷涂系统中，其中所述粉末的大部分粒子具有环形，每个环形的粒子具有球体，在所述球体相对侧上具有深凹痕；以及
将陶瓷涂层等离子体喷涂在所述主体，其中所述陶瓷涂层包含Y2O3和ZrO2的混合物，其中与其他形状的粉末粒子相比较，由所述具有环形的粒子形成的所述陶瓷涂层具有改良后的形态及降低的孔隙率，其中改良后的表面形态包括表面节结的数量减少。
9.如权利要求8所述的方法，其特征在于，使得所述气体以90升/分钟与130升/分钟之间的速率流过所述等离子体喷涂系统。
10.如权利要求8所述的方法，其特征在于，50％的所述粉末具有小于15微米的直径。
11.如权利要求8所述的方法，其特征在于，所述等离子体喷涂的步骤包含通过以下步骤涂覆一或更多个涂层：
涂布所述主体的后侧，其中随着所述等离子体喷涂系统垂直于所述主体的旋转轴移动，以相对于所述旋转主体45度角涂覆所述涂层，且所述后侧涂层具有2密耳的厚度；
涂布所述主体的外径，其中随着所述等离子体喷涂系统平行于所述主体的所述旋转轴移动，相对于所述旋转主体水平地涂覆所述涂层，且以2密耳的厚度涂覆所述外径涂层；以及
涂布所述主体的前侧，其中随着所述等离子体喷涂系统垂直于所述主体的旋转轴移动，翻转所述主体及以相对于所述旋转主体45度角涂覆所述涂层，且以2密耳的厚度涂覆所述前侧涂层。
12.如权利要求8所述的方法，其特征在于，所述主体包含用于半导体处理腔室且与还原性化学品一起使用的等离子体筛，其中所述等离子体筛包含Al、Al2O3或SiC中的至少一者。
13.如权利要求8所述的方法，其特征在于，表面结节的减少后的数量包括：每英寸的结节数量在30个节结至45个节结的范围内。
14.如权利要求8所述的方法，其特征在于，降低的孔隙率包括自2.5％至3.2％的范围内的孔隙率。
15.如权利要求8所述的方法，进一步包括：
在所述主体的前侧和后侧上执行第一次数的等离子体喷涂；以及
在所述主体的外径上执行第二次数的等离子体喷涂，所述第二次数低于所述第一次数。
CN201710717962.2A 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料 Active CN107516645B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261676818P 2012-07-27 2012-07-27
US61/676,818 2012-07-27
US13/830,608 2013-03-14
US13/830,608 US9343289B2 (en) 2012-07-27 2013-03-14 Chemistry compatible coating material for advanced device on-wafer particle performance
CN201380039967.4A CN104704606B (zh) 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380039967.4A Division CN104704606B (zh) 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料

Publications (2)

Publication Number Publication Date
CN107516645A true CN107516645A (zh) 2017-12-26
CN107516645B CN107516645B (zh) 2020-06-23

Family

ID=49995164

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201380039967.4A Active CN104704606B (zh) 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料
CN201710717962.2A Active CN107516645B (zh) 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201380039967.4A Active CN104704606B (zh) 2012-07-27 2013-07-26 针对先进元件的晶圆上粒子性能的化学相容性涂层材料

Country Status (6)

Country Link
US (3) US9343289B2 (zh)
JP (3) JP6275713B2 (zh)
KR (4) KR102140194B1 (zh)
CN (2) CN104704606B (zh)
TW (3) TWI661480B (zh)
WO (1) WO2014018830A1 (zh)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US20140315392A1 (en) * 2013-04-22 2014-10-23 Lam Research Corporation Cold spray barrier coated component of a plasma processing chamber and method of manufacture thereof
CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
US9708713B2 (en) 2013-05-24 2017-07-18 Applied Materials, Inc. Aerosol deposition coating for semiconductor chamber components
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US20150079370A1 (en) 2013-09-18 2015-03-19 Applied Materials, Inc. Coating architecture for plasma sprayed chamber components
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
TWI722986B (zh) * 2014-05-16 2021-04-01 美商應用材料股份有限公司 使用相和應力控制的電漿噴灑塗佈設計
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control
US9460898B2 (en) 2014-08-08 2016-10-04 Applied Materials, Inc. Plasma generation chamber with smooth plasma resistant coating
CN105428195B (zh) * 2014-09-17 2018-07-17 东京毅力科创株式会社 等离子体处理装置用的部件和部件的制造方法
JP2016065302A (ja) * 2014-09-17 2016-04-28 東京エレクトロン株式会社 プラズマ処理装置用の部品、及び部品の製造方法
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9209016B1 (en) * 2014-10-14 2015-12-08 Macronix International Co., Ltd. Coating method and coating system
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160254125A1 (en) * 2015-02-27 2016-09-01 Lam Research Corporation Method for coating surfaces
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
EP3418428B1 (en) * 2016-02-19 2023-05-17 Nippon Steel Corporation Ceramic laminate, ceramic insulating substrate, and method for manufacturing ceramic laminate
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
KR20180071695A (ko) * 2016-12-20 2018-06-28 주식회사 티씨케이 층간 경계를 덮는 증착층을 포함하는 반도체 제조용 부품 및 그 제조방법
JP6723659B2 (ja) * 2017-01-12 2020-07-15 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10186400B2 (en) 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
US10755900B2 (en) 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
US12076763B2 (en) * 2017-06-05 2024-09-03 Applied Materials, Inc. Selective in-situ cleaning of high-k films from processing chamber using reactive gas precursor
KR20220156674A (ko) * 2017-09-11 2022-11-25 어플라이드 머티어리얼스, 인코포레이티드 반응성 가스 전구체를 사용한 프로세싱 챔버로부터의 하이-k 막들의 선택적 인-시튜 세정
US11279656B2 (en) * 2017-10-27 2022-03-22 Applied Materials, Inc. Nanopowders, nanoceramic materials and methods of making and use thereof
US11047035B2 (en) 2018-02-23 2021-06-29 Applied Materials, Inc. Protective yttria coating for semiconductor equipment parts
US10443126B1 (en) 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
US11114330B2 (en) 2018-08-24 2021-09-07 Axcelis Technologies, Inc. Substrate support having customizable and replaceable features for enhanced backside contamination performance
CN208835019U (zh) * 2018-11-12 2019-05-07 江苏鲁汶仪器有限公司 一种反应腔内衬
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
CN109825827A (zh) * 2019-02-22 2019-05-31 沈阳富创精密设备有限公司 一种ic装备等离子体刻蚀腔防护涂层的制备方法
EP3933065A4 (en) * 2019-03-01 2022-08-17 NHK Spring Co., Ltd. TRAY AND ITS MANUFACTURING PROCESS
US20220115214A1 (en) * 2019-03-05 2022-04-14 Lam Research Corporation Laminated aerosol deposition coating for aluminum components for plasma processing chambers
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
CN111424273A (zh) * 2020-03-30 2020-07-17 沈阳富创精密设备有限公司 一种制备高洁净度涂层的方法
CN113185268B (zh) * 2021-04-29 2022-04-22 湖南大学 一种氧化铝陶瓷材料的制备方法及氧化铝陶瓷基片

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000057981A (ja) * 1998-06-02 2000-02-25 Toshiba Corp 熱輻射部材およびこれを用いた回転陽極型ｘ線管、並びにそれらの製造方法
EP1524682A1 (en) * 2003-10-17 2005-04-20 Tosoh Corporation Component for vacuum apparatus, production method thereof and apparatus using the same
JP2006213936A (ja) * 2005-02-01 2006-08-17 Osaka Prefecture 金属基材用保護皮膜、その形成方法及び保護皮膜付き金属基材
US20070110915A1 (en) * 2005-11-02 2007-05-17 Junya Kitamura Thermal spray powder and method for forming a thermal spray coating
CN101293771A (zh) * 2007-04-27 2008-10-29 应用材料股份有限公司 降低暴露于含卤素等离子体表面的腐蚀速率的装置和方法
JP2009068067A (ja) * 2007-09-13 2009-04-02 Covalent Materials Corp 耐プラズマ性セラミックス溶射膜
CN102210196A (zh) * 2008-11-10 2011-10-05 应用材料公司 用于等离子腔室部件的抗等离子涂层
CN102388680A (zh) * 2009-02-05 2012-03-21 苏舍美特科公司 等离子体涂覆设备和基材表面的涂覆或处理方法

Family Cites Families (174)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3796182A (en) 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
SE8000480L (sv) 1979-02-01 1980-08-02 Johnson Matthey Co Ltd Artikel lemplig for anvendning vid hoga temperaturer
JPS6038222B2 (ja) * 1979-11-30 1985-08-30 株式会社 サト−セン 鉄鋼用連続鋳造鋳型
US4439248A (en) 1982-02-02 1984-03-27 Cabot Corporation Method of heat treating NICRALY alloys for use as ceramic kiln and furnace hardware
US4642440A (en) 1984-11-13 1987-02-10 Schnackel Jay F Semi-transferred arc in a liquid stabilized plasma generator and method for utilizing the same
US4704299A (en) 1985-11-06 1987-11-03 Battelle Memorial Institute Process for low temperature curing of sol-gel thin films
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
CN1036286A (zh) 1988-02-24 1989-10-11 珀金·埃莱姆公司 超导陶瓷的次大气压等离子体喷涂
US4880614A (en) 1988-11-03 1989-11-14 Allied-Signal Inc. Ceramic thermal barrier coating with alumina interlayer
US5381944A (en) 1993-11-04 1995-01-17 The Regents Of The University Of California Low temperature reactive bonding
US5631803A (en) 1995-01-06 1997-05-20 Applied Materials, Inc. Erosion resistant electrostatic chuck with improved cooling system
US5415756A (en) 1994-03-28 1995-05-16 University Of Houston Ion assisted deposition process including reactive source gassification
US5679167A (en) 1994-08-18 1997-10-21 Sulzer Metco Ag Plasma gun apparatus for forming dense, uniform coatings on large substrates
WO1996011288A1 (en) 1994-10-05 1996-04-18 United Technologies Corporation Multiple nanolayer coating system
US5792562A (en) 1995-01-12 1998-08-11 Applied Materials, Inc. Electrostatic chuck with polymeric impregnation and method of making
US5626923A (en) 1995-09-19 1997-05-06 Mcdonnell Douglas Corporation Method of applying ceramic coating compositions to ceramic or metallic substrate
US5766693A (en) * 1995-10-06 1998-06-16 Ford Global Technologies, Inc. Method of depositing composite metal coatings containing low friction oxides
KR100471728B1 (ko) 1996-04-12 2005-03-14 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마 처리장치
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6194083B1 (en) 1997-07-28 2001-02-27 Kabushiki Kaisha Toshiba Ceramic composite material and its manufacturing method, and heat resistant member using thereof
US6106959A (en) 1998-08-11 2000-08-22 Siemens Westinghouse Power Corporation Multilayer thermal barrier coating systems
US6361645B1 (en) 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
DE60045384D1 (de) 1999-09-29 2011-01-27 Tokyo Electron Ltd Mehrzonenwiderstandsheizung
TW514996B (en) 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
JP4272786B2 (ja) 2000-01-21 2009-06-03 トーカロ株式会社 静電チャック部材およびその製造方法
WO2001058828A1 (fr) 2000-02-07 2001-08-16 Ibiden Co., Ltd. Substrat ceramique pour dispositif de production ou d'examen de semi-conducteurs
JP2001284328A (ja) * 2000-03-31 2001-10-12 Taiheiyo Cement Corp セラミック部品
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
JP2002249864A (ja) * 2000-04-18 2002-09-06 Ngk Insulators Ltd 耐ハロゲンガスプラズマ用部材およびその製造方法
CA2306941A1 (en) 2000-04-27 2001-10-27 Standard Aero Ltd. Multilayer thermal barrier coatings
IL152517A0 (en) 2000-05-02 2003-05-29 Univ Johns Hopkins Method of making reactive multilayer foil and resulting product
US7441688B2 (en) 2003-11-04 2008-10-28 Reactive Nanotechnologies Methods and device for controlling pressure in reactive multilayer joining and resulting product
NL1015550C2 (nl) 2000-06-28 2002-01-02 Xycarb Ceramics B V Werkwijze voor het vervaardigen van een uit een kern opgebouwde susceptor, aldus verkregen susceptor en een werkwijze voor het aanbrengen van actieve lagen op een halfgeleidersubstraat onder toepassing van een dergelijke susceptor.
EP1642994B8 (en) 2000-06-29 2017-04-19 Shin-Etsu Chemical Co., Ltd. Rare earth oxid powder used in thermal spray coating
JP3672833B2 (ja) * 2000-06-29 2005-07-20 信越化学工業株式会社 溶射粉及び溶射被膜
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP4688307B2 (ja) 2000-07-11 2011-05-25 コバレントマテリアル株式会社 半導体製造装置用耐プラズマ性部材
JP4644343B2 (ja) * 2000-09-29 2011-03-02 株式会社アルバック 真空処理室用表面構造
JP2002106360A (ja) * 2000-09-29 2002-04-10 Toshiba Corp ガスタービン用部品および当該部品を備えたガスタービン
US6479108B2 (en) 2000-11-15 2002-11-12 G.T. Equipment Technologies, Inc. Protective layer for quartz crucibles used for silicon crystallization
US6805952B2 (en) 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US6581275B2 (en) 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US6746539B2 (en) 2001-01-30 2004-06-08 Msp Corporation Scanning deposition head for depositing particles on a wafer
US6915964B2 (en) 2001-04-24 2005-07-12 Innovative Technology, Inc. System and process for solid-state deposition and consolidation of high velocity powder particles using thermal plastic deformation
TWI234417B (en) 2001-07-10 2005-06-11 Tokyo Electron Ltd Plasma procesor and plasma processing method
US6616031B2 (en) 2001-07-17 2003-09-09 Asm Assembly Automation Limited Apparatus and method for bond force control
KR100885328B1 (ko) 2001-08-02 2009-02-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 알루미나-산화 이트륨-산화 지르코늄/산화 하프늄 물질,및 그의 제조 및 사용 방법
JP4903322B2 (ja) * 2001-08-20 2012-03-28 株式会社日本セラテック 酸化イットリウム質部材
JP5132859B2 (ja) 2001-08-24 2013-01-30 ステラケミファ株式会社 多成分を有するガラス基板用の微細加工表面処理液
KR20030025007A (ko) 2001-09-19 2003-03-28 삼성전자주식회사 쉴드링을 가지는 식각장비
JP2003146751A (ja) 2001-11-20 2003-05-21 Toshiba Ceramics Co Ltd 耐プラズマ性部材及びその製造方法
JP4493251B2 (ja) 2001-12-04 2010-06-30 Ｔｏｔｏ株式会社 静電チャックモジュールおよび基板処理装置
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US6592948B1 (en) 2002-01-11 2003-07-15 General Electric Company Method for masking selected regions of a substrate
US20080213496A1 (en) * 2002-02-14 2008-09-04 Applied Materials, Inc. Method of coating semiconductor processing apparatus with protective yttrium-containing coatings
US8067067B2 (en) 2002-02-14 2011-11-29 Applied Materials, Inc. Clean, dense yttrium oxide coating protecting semiconductor processing apparatus
US6789498B2 (en) 2002-02-27 2004-09-14 Applied Materials, Inc. Elements having erosion resistance
JP4153708B2 (ja) 2002-03-12 2008-09-24 東京エレクトロン株式会社 エッチング方法
US7026009B2 (en) 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
DE10224137A1 (de) 2002-05-24 2003-12-04 Infineon Technologies Ag Ätzgas und Verfahren zum Trockenätzen
US20030232139A1 (en) 2002-06-13 2003-12-18 Detura Frank Anthony Shield and method for spraying coating on a surface
US7311797B2 (en) 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
US6784096B2 (en) 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
TW200420431A (en) 2002-11-20 2004-10-16 Shinetsu Chemical Co Heat resistant coated member, making method, and treatment using the same
FR2850790B1 (fr) 2003-02-05 2005-04-08 Semco Engineering Sa Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres
US6753269B1 (en) 2003-05-08 2004-06-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method for low k dielectric deposition
US7510641B2 (en) 2003-07-21 2009-03-31 Los Alamos National Security, Llc High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors
US7658816B2 (en) 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US20050056056A1 (en) 2003-09-16 2005-03-17 Wong Marvin Glenn Healing micro cracks in a substrate
DE60313042T2 (de) 2003-09-16 2008-01-03 Shin-Etsu Quartz Products Co., Ltd. Element für eine plasmaätzeinrichtung und verfahren zu dessen herstellung
JP4604640B2 (ja) * 2003-10-17 2011-01-05 東ソー株式会社 真空装置用部品及びその製造方法並びにそれを用いた装置
EP1690845A4 (en) 2003-10-31 2009-04-01 Tokuyama Corp ASSEMBLED ARTICLE BASED ON ALUMINUM NITRIDE AND PROCESS FOR PRODUCING THE SAME
US7220497B2 (en) * 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US20050142393A1 (en) 2003-12-30 2005-06-30 Boutwell Brett A. Ceramic compositions for thermal barrier coatings stabilized in the cubic crystalline phase
US20050230350A1 (en) 2004-02-26 2005-10-20 Applied Materials, Inc. In-situ dry clean chamber for front end of line fabrication
JP4443976B2 (ja) 2004-03-30 2010-03-31 忠弘 大見 セラミックスの洗浄方法および高清浄性セラミックス
CN1938452A (zh) * 2004-03-31 2007-03-28 东陶机器株式会社 使用气溶胶制造被膜的方法、用于该方法的微粒、以及被膜和复合材料
US7618769B2 (en) * 2004-06-07 2009-11-17 Applied Materials, Inc. Textured chamber surface
JP2006027012A (ja) 2004-07-14 2006-02-02 Pioneer Electronic Corp 脱泡方法及びこれを用いた脱泡装置
US20060068189A1 (en) 2004-09-27 2006-03-30 Derek Raybould Method of forming stabilized plasma-sprayed thermal barrier coatings
US7622424B2 (en) 2004-10-01 2009-11-24 American Superconductor Corporation Thick superconductor films with improved performance
US8058186B2 (en) 2004-11-10 2011-11-15 Tokyo Electron Limited Components for substrate processing apparatus and manufacturing method thereof
US7354659B2 (en) 2005-03-30 2008-04-08 Reactive Nanotechnologies, Inc. Method for fabricating large dimension bonds using reactive multilayer joining
US20060222777A1 (en) 2005-04-05 2006-10-05 General Electric Company Method for applying a plasma sprayed coating using liquid injection
WO2006130759A2 (en) 2005-05-31 2006-12-07 Corning Incorporated Aluminum titanate ceramic forming batch mixtures and green bodies including pore former combinations and methods of manufacturing and firing same
JP4813115B2 (ja) 2005-07-14 2011-11-09 国立大学法人東北大学 半導体製造装置用部材及びその洗浄方法
KR20070013118A (ko) 2005-07-25 2007-01-30 삼성전자주식회사 플라즈마 식각 장치
KR101019293B1 (ko) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US7622195B2 (en) 2006-01-10 2009-11-24 United Technologies Corporation Thermal barrier coating compositions, processes for applying same and articles coated with same
US7648782B2 (en) 2006-03-20 2010-01-19 Tokyo Electron Limited Ceramic coating member for semiconductor processing apparatus
ES2373144T3 (es) 2006-05-12 2012-01-31 Fundacion Inasmet Procedimiento de obtención de recubrimientos cerámicos y recubrimientos cerámicos obtenidos.
KR100939256B1 (ko) * 2006-06-21 2010-01-29 한국과학기술연구원 반도체 제조 장비용 열용사 코팅물질의 제조방법
US20080016684A1 (en) 2006-07-06 2008-01-24 General Electric Company Corrosion resistant wafer processing apparatus and method for making thereof
US20080029032A1 (en) 2006-08-01 2008-02-07 Sun Jennifer Y Substrate support with protective layer for plasma resistance
US7701693B2 (en) 2006-09-13 2010-04-20 Ngk Insulators, Ltd. Electrostatic chuck with heater and manufacturing method thereof
US20080090034A1 (en) 2006-09-18 2008-04-17 Harrison Daniel J Colored glass frit
US7469640B2 (en) 2006-09-28 2008-12-30 Alliant Techsystems Inc. Flares including reactive foil for igniting a combustible grain thereof and methods of fabricating and igniting such flares
US7479464B2 (en) 2006-10-23 2009-01-20 Applied Materials, Inc. Low temperature aerosol deposition of a plasma resistive layer
US7919722B2 (en) 2006-10-30 2011-04-05 Applied Materials, Inc. Method for fabricating plasma reactor parts
US8097105B2 (en) 2007-01-11 2012-01-17 Lam Research Corporation Extending lifetime of yttrium oxide as a plasma chamber material
CN104031632A (zh) 2007-03-12 2014-09-10 圣戈本陶瓷及塑料股份有限公司 高强度陶瓷元件及其制造方法和使用方法
TWI744898B (zh) * 2007-04-27 2021-11-01 美商應用材料股份有限公司 減小曝露於含鹵素電漿下之表面腐蝕速率的方法與設備
US7696117B2 (en) 2007-04-27 2010-04-13 Applied Materials, Inc. Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas
US8108981B2 (en) 2007-07-31 2012-02-07 Applied Materials, Inc. Method of making an electrostatic chuck with reduced plasma penetration and arcing
US7848076B2 (en) 2007-07-31 2010-12-07 Applied Materials, Inc. Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing
US9202736B2 (en) 2007-07-31 2015-12-01 Applied Materials, Inc. Method for refurbishing an electrostatic chuck with reduced plasma penetration and arcing
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5047741B2 (ja) * 2007-09-13 2012-10-10 コバレントマテリアル株式会社 耐プラズマ性セラミックス溶射膜
US7649729B2 (en) 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US20090214825A1 (en) * 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
CN101239771A (zh) * 2008-03-14 2008-08-13 清华大学 一种水源热泵与污泥厌氧消化集成方法及系统
CA2658210A1 (en) 2008-04-04 2009-10-04 Sulzer Metco Ag Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam
DE102008021167B3 (de) 2008-04-28 2010-01-21 Siemens Aktiengesellschaft Verfahren zur Erzeugung einer hermetisch dichten, elektrischen Durchführung mittels exothermer Nanofolie und damit hergestellte Vorrichtung
US8546284B2 (en) * 2008-05-07 2013-10-01 Council Of Scientific & Industrial Research Process for the production of plasma sprayable yttria stabilized zirconia (YSZ) and plasma sprayable YSZ powder produced thereby
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US20090297718A1 (en) 2008-05-29 2009-12-03 General Electric Company Methods of fabricating environmental barrier coatings for silicon based substrates
JP5537001B2 (ja) 2008-08-20 2014-07-02 株式会社アルバック 表面処理セラミックス部材、その製造方法および真空処理装置
US7929269B2 (en) 2008-09-04 2011-04-19 Momentive Performance Materials Inc. Wafer processing apparatus having a tunable electrical resistivity
JP5357486B2 (ja) 2008-09-30 2013-12-04 東京エレクトロン株式会社 プラズマ処理装置
JP5545792B2 (ja) 2008-10-31 2014-07-09 株式会社日本セラテック 耐食性部材
WO2010053687A2 (en) * 2008-11-04 2010-05-14 Praxair Technology, Inc. Thermal spray coatings for semiconductor applications
US9017765B2 (en) 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US20100177454A1 (en) 2009-01-09 2010-07-15 Component Re-Engineering Company, Inc. Electrostatic chuck with dielectric inserts
US7964517B2 (en) 2009-01-29 2011-06-21 Texas Instruments Incorporated Use of a biased precoat for reduced first wafer defects in high-density plasma process
US8404572B2 (en) 2009-02-13 2013-03-26 Taiwan Semiconductor Manufacturing Co., Ltd Multi-zone temperature control for semiconductor wafer
US8444737B2 (en) 2009-02-27 2013-05-21 Corning Incorporated Ceramic structures and methods of making ceramic structures
JP5001323B2 (ja) 2009-03-27 2012-08-15 トーカロ株式会社 白色酸化イットリウム溶射皮膜表面の改質方法および酸化イットリウム溶射皮膜被覆部材
CN102428212B (zh) 2009-05-08 2014-04-02 有限会社渊田纳米技研 氧化锆膜的成膜方法
KR101123719B1 (ko) 2009-06-05 2012-03-15 한국세라믹기술원 내플라즈마성 전자빔증착 세라믹 피막 부재
JP5595795B2 (ja) 2009-06-12 2014-09-24 東京エレクトロン株式会社 プラズマ処理装置用の消耗部品の再利用方法
US20110086178A1 (en) 2009-10-14 2011-04-14 General Electric Company Ceramic coatings and methods of making the same
JP5604888B2 (ja) 2009-12-21 2014-10-15 住友大阪セメント株式会社 静電チャックの製造方法
JP5527884B2 (ja) * 2009-12-28 2014-06-25 コバレントマテリアル株式会社 溶射用粉末
JP5423632B2 (ja) 2010-01-29 2014-02-19 住友大阪セメント株式会社 静電チャック装置
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
JP5267603B2 (ja) 2010-03-24 2013-08-21 Ｔｏｔｏ株式会社 静電チャック
KR101221925B1 (ko) 2010-04-22 2013-01-14 한국세라믹기술원 플라즈마 저항성 세라믹 피막 및 그 제조 방법
CN102296263B (zh) * 2010-06-25 2013-04-24 中国科学院微电子研究所 等离子体刻蚀工艺腔室内表面的改性处理方法
US20110315081A1 (en) 2010-06-25 2011-12-29 Law Kam S Susceptor for plasma processing chamber
WO2012005977A1 (en) 2010-06-29 2012-01-12 Los Alamos National Security, Llc Solution deposition planarization method
US9969022B2 (en) 2010-09-28 2018-05-15 Applied Materials, Inc. Vacuum process chamber component and methods of making
US20120100299A1 (en) 2010-10-25 2012-04-26 United Technologies Corporation Thermal spray coating process for compressor shafts
US8916021B2 (en) 2010-10-27 2014-12-23 Applied Materials, Inc. Electrostatic chuck and showerhead with enhanced thermal properties and methods of making thereof
KR101981766B1 (ko) 2011-06-02 2019-05-23 어플라이드 머티어리얼스, 인코포레이티드 정전기 척 aln 유전체 수리
JP5665679B2 (ja) 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
JP5496992B2 (ja) 2011-12-13 2014-05-21 中国電力株式会社 プラズマ溶射装置及びその制御方法
US9034199B2 (en) 2012-02-21 2015-05-19 Applied Materials, Inc. Ceramic article with reduced surface defect density and process for producing a ceramic article
US9212099B2 (en) 2012-02-22 2015-12-15 Applied Materials, Inc. Heat treated ceramic substrate having ceramic coating and heat treatment for coated ceramics
KR20130098707A (ko) 2012-02-28 2013-09-05 삼성전자주식회사 정전 척 장치 및 그 제어방법
US20130273313A1 (en) 2012-04-13 2013-10-17 Applied Materials, Inc. Ceramic coated ring and process for applying ceramic coating
US9090046B2 (en) 2012-04-16 2015-07-28 Applied Materials, Inc. Ceramic coated article and process for applying ceramic coating
US9394615B2 (en) 2012-04-27 2016-07-19 Applied Materials, Inc. Plasma resistant ceramic coated conductive article
US20130288037A1 (en) 2012-04-27 2013-10-31 Applied Materials, Inc. Plasma spray coating process enhancement for critical chamber components
US9604249B2 (en) 2012-07-26 2017-03-28 Applied Materials, Inc. Innovative top-coat approach for advanced device on-wafer particle performance
US9343289B2 (en) 2012-07-27 2016-05-17 Applied Materials, Inc. Chemistry compatible coating material for advanced device on-wafer particle performance
US9916998B2 (en) 2012-12-04 2018-03-13 Applied Materials, Inc. Substrate support assembly having a plasma resistant protective layer
US9708713B2 (en) 2013-05-24 2017-07-18 Applied Materials, Inc. Aerosol deposition coating for semiconductor chamber components
US9865434B2 (en) 2013-06-05 2018-01-09 Applied Materials, Inc. Rare-earth oxide based erosion resistant coatings for semiconductor application
US9850568B2 (en) 2013-06-20 2017-12-26 Applied Materials, Inc. Plasma erosion resistant rare-earth oxide based thin film coatings
US9711334B2 (en) 2013-07-19 2017-07-18 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based thin film coatings on process rings
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US20150079370A1 (en) 2013-09-18 2015-03-19 Applied Materials, Inc. Coating architecture for plasma sprayed chamber components
US9440886B2 (en) 2013-11-12 2016-09-13 Applied Materials, Inc. Rare-earth oxide based monolithic chamber material
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US9869013B2 (en) 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US10730798B2 (en) 2014-05-07 2020-08-04 Applied Materials, Inc. Slurry plasma spray of plasma resistant ceramic coating
US10385459B2 (en) 2014-05-16 2019-08-20 Applied Materials, Inc. Advanced layered bulk ceramics via field assisted sintering technology
US10196728B2 (en) 2014-05-16 2019-02-05 Applied Materials, Inc. Plasma spray coating design using phase and stress control

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000057981A (ja) * 1998-06-02 2000-02-25 Toshiba Corp 熱輻射部材およびこれを用いた回転陽極型ｘ線管、並びにそれらの製造方法
EP1524682A1 (en) * 2003-10-17 2005-04-20 Tosoh Corporation Component for vacuum apparatus, production method thereof and apparatus using the same
TW200521265A (en) * 2003-10-17 2005-07-01 Tosoh Corp Component for vacuum apparatus, production method thereof and apparatus using the same
JP2006213936A (ja) * 2005-02-01 2006-08-17 Osaka Prefecture 金属基材用保護皮膜、その形成方法及び保護皮膜付き金属基材
US20070110915A1 (en) * 2005-11-02 2007-05-17 Junya Kitamura Thermal spray powder and method for forming a thermal spray coating
CN101293771A (zh) * 2007-04-27 2008-10-29 应用材料股份有限公司 降低暴露于含卤素等离子体表面的腐蚀速率的装置和方法
JP2009068067A (ja) * 2007-09-13 2009-04-02 Covalent Materials Corp 耐プラズマ性セラミックス溶射膜
CN102210196A (zh) * 2008-11-10 2011-10-05 应用材料公司 用于等离子腔室部件的抗等离子涂层
CN102388680A (zh) * 2009-02-05 2012-03-21 苏舍美特科公司 等离子体涂覆设备和基材表面的涂覆或处理方法

Also Published As

Publication number Publication date
KR20170034938A (ko) 2017-03-29
KR101720094B1 (ko) 2017-03-27
TWI624868B (zh) 2018-05-21
KR102140194B1 (ko) 2020-07-31
WO2014018830A1 (en) 2014-01-30
TW201828353A (zh) 2018-08-01
JP6640250B2 (ja) 2020-02-05
JP2018076600A (ja) 2018-05-17
US11587771B2 (en) 2023-02-21
KR20190114040A (ko) 2019-10-08
KR102029885B1 (ko) 2019-10-08
US9343289B2 (en) 2016-05-17
JP2015530737A (ja) 2015-10-15
JP2020073725A (ja) 2020-05-14
KR101897594B1 (ko) 2018-09-12
TW201732917A (zh) 2017-09-16
JP7035005B2 (ja) 2022-03-14
CN104704606B (zh) 2017-09-01
JP6275713B2 (ja) 2018-02-07
US20140030486A1 (en) 2014-01-30
US20180269039A1 (en) 2018-09-20
KR20150046073A (ko) 2015-04-29
US10020170B2 (en) 2018-07-10
TWI592385B (zh) 2017-07-21
US20160211121A1 (en) 2016-07-21
TW201410639A (zh) 2014-03-16
CN104704606A (zh) 2015-06-10
KR20170104668A (ko) 2017-09-15
CN107516645B (zh) 2020-06-23
TWI661480B (zh) 2019-06-01

Similar Documents

Publication Publication Date Title
CN104704606B (zh) 针对先进元件的晶圆上粒子性能的化学相容性涂层材料
US11578398B2 (en) Plasma spray coating design using phase and stress control
CN209104115U (zh) 具有多层等离子体侵蚀保护的制品
JP2015522710A (ja) 重要チャンバコンポーネント用プラズマ溶射プロセスの強化
TW201604294A (zh) 使用相和應力控制的電漿噴灑塗佈設計

Legal Events

Date Code Title Description
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant