CN104079282B - 耗尽型金属氧化物半导体场效应管驱动器 - Google Patents

耗尽型金属氧化物半导体场效应管驱动器 Download PDF

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CN104079282B
CN104079282B CN201410109386.XA CN201410109386A CN104079282B CN 104079282 B CN104079282 B CN 104079282B CN 201410109386 A CN201410109386 A CN 201410109386A CN 104079282 B CN104079282 B CN 104079282B
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M·泰利福斯
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Flextronics International USA Inc
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/00032—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries characterised by data exchange
    • H02J7/00034—Charger exchanging data with an electronic device, i.e. telephone, whose internal battery is under charge
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/10—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling
    • H02J50/12—Circuit arrangements or systems for wireless supply or distribution of electric power using inductive coupling of the resonant type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/20—Circuit arrangements or systems for wireless supply or distribution of electric power using microwaves or radio frequency waves
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/40—Circuit arrangements or systems for wireless supply or distribution of electric power using two or more transmitting or receiving devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J50/00—Circuit arrangements or systems for wireless supply or distribution of electric power
    • H02J50/80—Circuit arrangements or systems for wireless supply or distribution of electric power involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B5/00—Near-field transmission systems, e.g. inductive or capacitive transmission systems
    • H04B5/70—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes
    • H04B5/79—Near-field transmission systems, e.g. inductive or capacitive transmission systems specially adapted for specific purposes for data transfer in combination with power transfer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Electronic Switches (AREA)
  • Dc-Dc Converters (AREA)
  • Power Conversion In General (AREA)

Abstract

驱动器电路被配置为使用耗尽型MOSFET供应输出电容器两端的输出电压。该驱动器电路包括位于MOSFET的两个端子之间的电阻器。在n‑沟道耗尽型MOSFET的情况下，电阻器被耦合到源极和栅极。该电路是电流控制的耗尽型驱动器，其驱动反向电流通过电阻器以在栅极处相对于源极建立负电势来截止耗尽型MOSFET。齐纳二极管耦合在耗尽型MOSFET的源极和输出电容器之间以在输出和MOSFET源极之间建立电压差。

Description

耗尽型金属氧化物半导体场效应管驱动器
相关申请的交叉引用
本专利申请要求2013年3月15日提交的标题为“利用专用初级侧控制绕组划分的新的电源管理集成电路(New Power Management Integrated Circuit PartitioningWith Dedicated Primary Side Control Winding)”的共同未决的第61/799,124号美国临时申请的优先权。本申请通过引用合并第61/799,124号美国临时申请的全部内容。
技术领域
本发明一般涉及金属氧化物半导体场效应管(MOSFET)驱动器的领域。更具体地，本发明涉及耗尽型MOSFET驱动器。
背景技术
MOSFET是用于放大或开关电子信号的晶体管。在增强型MOSFET中，氧化物两端的压降经由场效应诱生源极触点和漏极触点之间的导电沟道。术语“增强型”是指导电率随着将载流子添加到沟道(也被称为反转层)的氧化物场的增加而增加。为了导通增强型MOSFET，电压被施加到栅极。在耗尽型MOSKET中，沟道由与衬底相反类型的表面杂质层中的载流子构成，并且导电率通过施加使载流子从这样的表面层耗尽的场而下降。耗尽型MOSFET被掺杂为使得即使在从栅极到源极的电压为零时也存在沟道。因此，耗尽型MOSFET在不向栅极施加电压的情况下是导通的。为了控制沟道，负电压被施加到栅极(对于n沟道器件)，从而耗尽沟道，这减少了流过器件的电流。
耗尽型MOSFET常用在驱动器电路中。为了截止耗尽型MOSFET，负的栅极-到-源极电压必须被施加。这通常是通过利用电压控制将栅极电压拉到地来实现。
发明内容
驱动器电路被配置为使用耗尽型MOSFET来供应输出电容器两端的输出电压。驱动器电路包括位于MOSFET的两个端子之间的电阻器。在n-沟道耗尽型MOSFET的情况下，电阻器被耦合到源极和栅极。该电路是电流控制的耗尽型驱动器，其驱动反向电流通过电阻器以在栅极处相对于源极建立负电势来截止耗尽型MOSFET。齐纳二极管耦接在耗尽型MOSFET的源极和输出电容器之间以在输出和MOSFET源极之间建立电压差。
在一个方面，公开了一种电流驱动的基于耗尽型MOSFET的驱动器电路。该驱动器电路包括耗尽型MOSFET、输出电容器、晶体管和电阻器。耗尽型MOSFET具有第一端子、第二端子和栅极，其中第一端子耦合到电源。输出电容器耦合到耗尽型MOSFET的第二端子。晶体管具有接收驱动电压的第一端子、第二端子、以及耦合到地的第三端子。晶体管的第一端子耦合到输出电容器，而且晶体管的第二端子耦合到耗尽型MOSFET的栅极。电阻器具有第一端子和第二端子。电阻器的第一端子耦合到输出电容器和耗尽型MOSFET的第二端子。电阻器的第二端子耦合到耗尽型MOSFET的栅极和晶体管的第二端子。
在一些实施例中，耗尽型MOSFET是N沟道MOSFET，而且电阻器的第一端子耦合到耗尽型MOSFET的源极。在其它实施例中，耗尽型MOSFET是P沟道MOSFET，而且电阻器的第一端子耦合到耗尽型MOSFET的漏极。在一些实施例中，该驱动电路还包括分压器，其连接在输出电容器和晶体管的第一端子之间。在一些实施例中，分压器被配置为当输出电容器两端的电压等于或大于阈值电压时向晶体管的栅极供应导通电压。
在一些实施例中，当晶体管导通时，反向电流流过电阻器，由此导致耗尽型MOSFET的栅极和第二端子之间的负电压电势，其截止耗尽型MOSFET。在一些实施例中，反向电流从输出电容器流过电阻器并流过晶体管。在一些实施例中，反向电流流动导致输出电容器两端的电压下降，进一步地，其中，当输出电容器两端的电压下降到低于最小值时，供应给晶体管的栅极的电压下降到低于导通电压并且晶体管截止。在一些实施例中，当晶体管截止时，反向电流停止而且耗尽型MOSFET导通。
在一些实施例中，驱动电路还包括齐纳二极管，其具有耦合到耗尽型MOSFET的第二端子的阴极和耦合到输出电容器的阳极。在一些实施例中，电阻器的第一端子耦合到齐纳二极管的阴极和耗尽型MOSFET的第二端子。
在另一个方面，公开了另一种电流驱动的基于耗尽型MOSFET的驱动器电路。该驱动器电路包括耗尽型MOSFET、输出电容器、齐纳二极管、分压器、晶体管和电阻器。耗尽型MOSFET具有第一端子、第二端子和栅极，其中第一端子耦合到电源。齐纳二极管具有耦合到耗尽型MOSFET的第二端子的阴极和耦合到输出电容器的第一端子的阳极。分压器耦合到输出电容器的第一端子。晶体管具有接收驱动电压的第一端子、第二端子、以及耦合到地的第三端子。晶体管的第一端子耦合到分压器，而且晶体管的第二端子耦合到耗尽型MOSFET的栅极。电阻器具有第一端子和第二端子。电阻器的第一端子耦合到齐纳二极管的阴极和耗尽型MOSFET的第二端子。电阻器的第二端子耦合到耗尽型MOSFET的栅极和晶体管的第二端子。
在又一方面，公开了一种驱动基于耗尽型MOSFET的驱动器电路的方法。该方法包括配置驱动器电路，其包括耗尽型MOSFET、输出电容器、晶体管和电阻器。耗尽型MOSFET包括耦合到电源的第一端子、耦合到输出电容器和栅极的第二端子。晶体管包括耦合到输出电容器的栅极、耦合到耗尽型MOSFET的栅极的第一端子、以及耦合到地的第二端子。电阻器包括耦合到输出电容器和耗尽型MOSFET的第二端子的第一端子、和耦合到耗尽型MOSFET的栅极和晶体管的第一端子的第二端子。该方法还包括导通晶体管，从而驱动反向电流从第一端子通过电阻器流到第二端子，导致耗尽型MOSFET的栅极和耗尽型MOSFET的第二端子之间的负电压电势，该负电压电势截止耗尽型MOSFET。
在一些实施例中，反向电流从输出电容器流过电阻器并流过晶体管。在一些实施例中，反向电流流动导致输出电容器两端的电压下降，其中，当输出电容器两端的电压下降到低于最小值时，供应给晶体管的栅极的电压下降到低于晶体管的导通电压并且晶体管截止。在一些实施例中，当晶体管截止时，反向电流停止而且耗尽型MOSFET导通。在一些实施例中，该方法还包括当输出电容器两端的电压等于或大于阈值电压时向晶体管的栅极供应导通电压。
附图说明
参照附图描述一些示例性实施例，其中相同的部件被提供有相同的参考数字。示例性实施例旨在说明而不是限制本发明。附图包括下图：
图1示出了根据实施例的耗尽型MOSFET驱动器电路。
图2示出了图1的耗尽型MOSFET驱动器电路中的反向电流流动。
具体实施方式
本申请的实施例针对耗尽型MOSFET驱动程序。本领域普通技术人员将认识到，耗尽型MOSFET驱动器的以下详细描述仅是说明性的，而并非旨在以任何方式进行限制。根据本公开的益处，本领域技术人员将很容易想到耗尽型MOSFET驱动器的其他实施例。
现在将详细参考如图所示的耗尽MOSFET驱动器的实现。贯穿附图将使用相同的参考指示符，而且以下详细描述指代相同或相似的部件。为了清楚起见，不是所有在此描述的实现的例程特种都被示出和描述。然而，可以理解，在任何这种实际实现的开发中，必须做出许多特定于实现的决定以实现开发者的具体目标，诸如符合与应用和商业相关的约束，而且这些特定的目标从一个实现到另一个实现而有所不同并且从一个开发者到另一个开发者而有所不同。此外，将会理解，这样的开发努力可能是复杂和费时的，但是仍然是具有本公开的益处的本领域普通技术人员的常规工程任务。
图1示出了根据实施例的耗尽型MOSFET驱动器电路。该驱动器电路包括耗尽型MOSFET Q1、齐纳二极管Z1、晶体管Q2、电阻器Rl、R2和R3、电容器Cl、和表示耦合到电容器C1的负载的电阻器RL。在此示例性实施例中，耗尽型MOSFET Q1为n-沟道耗尽型MOSFET，而且晶体管Q2是NPN双极型结型晶体管(BJT)。应该理解的是，耗尽型MOSFET Q1可替换地可以是p-沟道耗尽型MOSFET。还应该理解，晶体管Q2可以是除了BJT之外的可替换类型的晶体管。齐纳二极管是允许电流在正向方向上以与理想二极管相同的方式流动，但是当电压超过某一值时也允许电流在反向方向上流动的二极管。
当连接到电源电压Vcc时，当零电压被施加到栅极时耗尽型MOSFET Q1的自然状态为ON(导通)。当耗尽型MOSFET Q1为ON时，电流流过耗尽型MOSFET Q1，流过齐纳二极管Z1，流到电容器C1，以使得电容器C1变为被充电。
为了截止耗尽型MOSFET Q1，负电压需要被施加到栅极，或者更具体地，栅极-到-源极电压Vgs必须为负，在这种情况下栅极电压低于源极电压。
电阻器R1和R2形成分压器，以将驱动电压供应给晶体管Q2的栅极。在示例性应用中，Vcc＝200V而且电容器C1被充电到15V。电阻器R1和R2被配置为：当电容器C1具有阈值电压，诸如完全充电时，将足够的导通电压供应给晶体管Q2的栅极。在示例性应用中，晶体管Q2的导通电压大约为1V，而且分压器被配置为：当电容器C1被充电到15V时，将1V供应到晶体管Q1的栅极。
在示例性应用中，齐纳二极管Z1两端的压降为5V。当电容器C1被充电到15V时，耗尽型MOSFET Q1的源极电压Vs为10V。由于电容器Cl两端的电压至少处于阈值电压，因此晶体管Q2的栅极的电压足以导通晶体管Q2。当晶体管Q2导通时，反向电流I从电容器Cl流过齐纳二极管Z1、流过电阻器R3、流过晶体管Q2、流到地，如图2所示。由于反向电流流过电阻器R3，因此电阻器R3两端存在压降VR3，并因此晶体管Q1的栅极电压Vg低于源极的电压Vs，Vg＝Vs-VR3。通过电阻器R3的反向电流在耗尽型MOSFET Q1的栅极处相对于源极建立了负电势。这是负的栅极-到-源极电压Vgs，其截止耗尽型MOSFET Q1。在示例性应用中，电阻器R3具有1兆欧姆(megaohm)的电阻。
这种电路结构是从电容器C1驱动反向电流通过晶体管Q2的电流控制的耗尽型驱动器。驱动反向电流通过电阻器R3流向驱动晶体管Q2，以截止耗尽型MOSFET Q1。具体而言，驱动反向电流通过电阻器R3导致电阻器R3两端的压降，这将在耗尽型MOSFET Q1处导致负的栅极-到-源极电压Vgs。负的栅极-到-源极电压Vgs截止耗尽型MOSFET Q1。这个电流控制的驱动器与传统耗尽型MOSFET驱动器相比，这个电流控制的驱动器利用电压控制来截止耗尽型MOSFET。
齐纳二极管Z1建立源极电压Vs和输出电压Vout之间的电压差。当晶体管Q2导通时，齐纳二极管Z1和电容器C1用作电流源。齐纳二极管Z1也可以用作额外的偏压元件，以建立晶体管Q1可以在其中被截止的更大的输出电压带宽。
当反向电流I从电容器C1流过齐纳二极管Z1、电阻器R3和晶体管Q2时，电容器C1放电。一旦电容器C1放电至一定电平，供应给晶体管Q2的栅极的电压就下降到低于导通电压而且晶体管Q2截止，这将停止反向电流流动。由于没有反向电流流过，因此耗尽型MOSFET的栅极-到-源极电压Vgs不再是负的，并且耗尽型MOSFET再次导通。
这种电路的另一个优点是，耗尽型MOSFET Q1的漏电流随着反向电流流向地。漏电流不再流向输出。
已经参照包含细节的具体实施例描述了本申请，以帮助理解耗尽型MOSFET驱动器的结构和操作的原理。各图中所示和描述的许多部件可以互换，以实现所需的结果，并且该描述应也被理解为包括这样的互换。因此，本文中提及的具体实施例及其细节并非旨在限制所附权利要求的范围。对本领域技术人员将显而易见的是，可以对为了描述所选择的实施例进行修改而不脱离本申请的精神和范围。

Claims (13)

1.一种电流驱动的基于耗尽型MOSFET的驱动器电路，包括：
a.耗尽型MOSFET，其具有第一端子、第二端子和栅极，其中第一端子耦合到电源；
b.输出电容器，其具有第一端子和第二端子，其中该输出电容器的第二端子被耦合为与地直接电接触；
c.齐纳二极管，其具有耦合为与该耗尽型MOSFET的第二端子直接电接触的阴极和耦合为与该输出电容器的第一端子直接电接触的阳极；
d.分压器，其耦合为与该输出电容器的第一端子直接电接触；
e.晶体管，其具有接收驱动电压的第一端子、第二端子、以及耦合为与地直接电接触的第三端子，其中，晶体管的第一端子耦合为与分压器直接电接触，而且晶体管的第二端子耦合为与该耗尽型MOSFET的栅极直接电接触；以及
f.电阻器，其具有第一端子和第二端子，其中，电阻器的第一端子耦合为与齐纳二极管的阴极直接电接触并且被耦合为与该耗尽型MOSFET的第二端子直接电接触，而且电阻器的第二端子耦合为与该耗尽型MOSFET的栅极直接电接触并且耦合为与该晶体管的第二端子直接电接触，使得经由该电阻器在该耗尽型MOSFET的第二端子和该耗尽型MOSFET的栅极之间形成连接。
2.如权利要求1所述的驱动器电路，其中，所述耗尽型MOSFET是N沟道MOSFET，而且电阻器的第一端子耦合到耗尽型MOSFET的源极。
3.如权利要求1所述的驱动器电路，其中，所述耗尽型MOSFET是P沟道MOSFET，而且电阻器的第一端子耦合到耗尽型MOSFET的漏极。
4.如权利要求1所述的驱动器电路，其中，所述分压器被配置为当输出电容器两端的电压等于或大于阈值电压时向晶体管的第一端子供应导通电压。
5.如权利要求1所述的驱动器电路，其中，当晶体管导通时，反向电流流过电阻器，由此导致耗尽型MOSFET的栅极和第二端子之间的负电压电势，所述负电压电势截止耗尽型MOSFET。
6.如权利要求5所述的驱动器电路，其中，所述反向电流顺序地从输出电容器流出，流过该电阻器并流过该晶体管。
7.如权利要求5所述的驱动器电路，其中，所述反向电流流动导致输出电容器两端的电压下降，而且其中，当输出电容器两端的电压下降到低于最小值时，供应给晶体管的第一端子的电压下降到低于导通电压并且晶体管截止。
8.如权利要求7所述的驱动器电路，其中，当晶体管截止时，反向电流停止而且耗尽型MOSFET导通。
9.一种驱动基于耗尽型MOSFET的驱动器电路的方法，该方法包括：
a.配置驱动器电路，所述驱动器电路包括耗尽型MOSFET、输出电容器、齐纳二极管、分压器、晶体管和电阻器，其中，该输出电容器包括第一端子和第二端子，该输出电容器的第二端子与地直接电接触，其中，耗尽型MOSFET包括耦合到电源的第一端子、耦合为与所述齐纳二极管的阴极直接电接触的第二端子和栅极，其中，所述齐纳二极管的阳极耦合为与所述输出电容器的第一端子直接电接触，其中，该分压器被耦合为与该输出电容器的第一端子直接电接触，其中，晶体管包括耦合为与该分压器直接电接触的第一端子、耦合为与该耗尽型MOSFET的栅极直接电接触的第二端子、以及耦合为与地直接电接触的第三端子，其中，电阻器包括耦合为与所述齐纳二极管的阴极直接电接触并且耦合为与耗尽型MOSFET的第二端子直接电接触的第一端子、和耦合为与耗尽型MOSFET的栅极直接电接触并且耦合为与该晶体管的第二端子直接电接触的第二端子，使得经由该电阻器在该耗尽型MOSFET的第二端子和该耗尽型MOSFET的栅极之间形成连接；以及
b.导通晶体管，从而驱动反向电流从第一端子通过电阻器流到第二端子，导致耗尽型MOSFET的栅极和耗尽型MOSFET的第二端子之间的负电压电势，该负电压电势截止耗尽型MOSFET。
10.如权利要求9所述的方法，其中，所述反向电流顺序地从输出电容器流出，流过所述齐纳二极管，流过电阻器并流过晶体管。
11.如权利要求10所述的方法，其中，所述反向电流流动导致输出电容器两端的电压下降，并且其中，当输出电容器两端的电压下降到低于最小值时，供应给晶体管的第一端子的电压下降到低于晶体管的导通电压并且晶体管截止。
12.如权利要求11所述的方法，其中，当晶体管截止时，反向电流停止而且耗尽型MOSFET导通。
13.如权利要求9所述的方法，还包括：当输出电容器两端的电压等于或大于阈值电压时向晶体管的第一端子供应导通电压。
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US9806553B2 (en) 2017-10-31
US20140266029A1 (en) 2014-09-18
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US9627915B2 (en) 2017-04-18
US9843212B2 (en) 2017-12-12
US20140266321A1 (en) 2014-09-18
US9490651B2 (en) 2016-11-08
US20140266028A1 (en) 2014-09-18
US20140266027A1 (en) 2014-09-18
CN104079282A (zh) 2014-10-01

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