CN104011836B - 激光切割用膜基材、激光切割用膜以及电子部件的制造方法 - Google Patents

激光切割用膜基材、激光切割用膜以及电子部件的制造方法 Download PDF

Info

Publication number
CN104011836B
CN104011836B CN201280064243.0A CN201280064243A CN104011836B CN 104011836 B CN104011836 B CN 104011836B CN 201280064243 A CN201280064243 A CN 201280064243A CN 104011836 B CN104011836 B CN 104011836B
Authority
CN
China
Prior art keywords
layer
base material
cutting
film
copolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201280064243.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN104011836A (zh
Inventor
中野重则
锦织雅弘
桥本芳惠
宫下雄介
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Mitsui Polychemicals Co Ltd
Original Assignee
Du Pont Mitsui Polychemicals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont Mitsui Polychemicals Co Ltd filed Critical Du Pont Mitsui Polychemicals Co Ltd
Priority to CN201710077961.6A priority Critical patent/CN107057594B/zh
Publication of CN104011836A publication Critical patent/CN104011836A/zh
Application granted granted Critical
Publication of CN104011836B publication Critical patent/CN104011836B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/306—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl acetate or vinyl alcohol (co)polymers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F210/00—Copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
    • C08F210/02—Ethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/44—Preparation of metal salts or ammonium salts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/08—Copolymers of ethene
    • C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
    • C08L23/0869—Acids or derivatives thereof
    • C08L23/0876—Neutralised polymers, i.e. ionomers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/412—Transparent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/08—Copolymers of ethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2423/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2423/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2423/04—Homopolymers or copolymers of ethene
    • C08J2423/08—Copolymers of ethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/16—Applications used for films
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/08—Copolymers of ethene
    • C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing other atoms than carbon or hydrogen atoms
    • C08L23/0853—Vinylacetate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/414—Additional features of adhesives in the form of films or foils characterized by the presence of essential components presence of a copolymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/04—Presence of homo or copolymers of ethene
    • C09J2423/046—Presence of homo or copolymers of ethene in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Laser Beam Processing (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Adhesives Or Adhesive Processes (AREA)
CN201280064243.0A 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法 Active CN104011836B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710077961.6A CN107057594B (zh) 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2011284379 2011-12-26
JP2011-284379 2011-12-26
JP2012053389 2012-03-09
JP2012-053389 2012-03-09
JP2012-122540 2012-05-29
JP2012122540 2012-05-29
PCT/JP2012/083154 WO2013099778A1 (fr) 2011-12-26 2012-12-20 Substrat pour film de découpage discret en dés, film pour découpage discret en dés, et procédé de fabrication de composant électronique

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201710077961.6A Division CN107057594B (zh) 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法

Publications (2)

Publication Number Publication Date
CN104011836A CN104011836A (zh) 2014-08-27
CN104011836B true CN104011836B (zh) 2017-07-25

Family

ID=48697267

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201280064243.0A Active CN104011836B (zh) 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法
CN201710077961.6A Active CN107057594B (zh) 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201710077961.6A Active CN107057594B (zh) 2011-12-26 2012-12-20 激光切割用膜基材、激光切割用膜以及电子部件的制造方法

Country Status (5)

Country Link
JP (2) JP6073810B2 (fr)
KR (3) KR101742647B1 (fr)
CN (2) CN104011836B (fr)
TW (2) TWI563061B (fr)
WO (1) WO2013099778A1 (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6111827B2 (ja) * 2013-04-30 2017-04-12 三星ダイヤモンド工業株式会社 ブレイク用治具
JP6472972B2 (ja) * 2013-10-23 2019-02-20 三井・デュポンポリケミカル株式会社 ダイシングテープ基材用樹脂組成物およびダイシングテープ基材
JP6482818B2 (ja) * 2013-10-23 2019-03-13 リンテック株式会社 ダイシングシート
WO2015076126A1 (fr) * 2013-11-22 2015-05-28 リンテック株式会社 Film de base de feuille de découpage en dés, feuille de découpage en dés contenant ledit film de base, et procédé de fabrication dudit film de base
JP6334223B2 (ja) * 2014-03-26 2018-05-30 リンテック株式会社 粘着シート
JP6158753B2 (ja) * 2014-06-03 2017-07-05 アキレス株式会社 半導体製造工程用テープの基材フィルム
EP3159914B1 (fr) * 2014-06-18 2019-07-24 LINTEC Corporation Film de base pour feuille de découpage en dés et feuille de découpage en dés
JP6804860B2 (ja) * 2016-04-05 2020-12-23 パナック株式会社 キャリアシート及びカット部材の製造方法
KR102447761B1 (ko) * 2016-11-02 2022-09-27 린텍 가부시키가이샤 다이싱 시트
WO2018123804A1 (fr) * 2016-12-27 2018-07-05 三井・デュポンポリケミカル株式会社 Base de film de découpage en dés et film de découpage en dés
JP7009197B2 (ja) 2017-01-30 2022-01-25 グンゼ株式会社 ダイシング用基体フィルム
CN106784200B (zh) * 2017-02-15 2018-10-19 西安中为光电科技有限公司 一种隐形切割和背镀led芯片的制作方法
EP3668677B1 (fr) * 2017-09-13 2022-07-20 Genuine Solutions Pte. Ltd. Procédé de coupe pour substrats à base de composite de moulage de résine polymère et système associé
JP7141924B2 (ja) * 2018-02-09 2022-09-26 日東電工株式会社 ダイシングテープ
JP7042667B2 (ja) * 2018-03-28 2022-03-28 古河電気工業株式会社 半導体チップの製造方法
CN110408334B (zh) * 2018-04-27 2023-04-07 东丽先端材料研究开发（中国）有限公司 粘合薄膜
KR102483810B1 (ko) * 2018-08-08 2023-01-03 미츠이·다우 폴리케미칼 가부시키가이샤 다이싱 필름 기재용 수지 조성물, 다이싱 필름 기재 및 다이싱 필름
CN109081301A (zh) * 2018-08-09 2018-12-25 烟台睿创微纳技术股份有限公司 一种mems晶圆切割方法
CN108996470A (zh) * 2018-08-09 2018-12-14 烟台睿创微纳技术股份有限公司 一种mems晶圆切割方法
CN109599463A (zh) * 2018-12-07 2019-04-09 广东工业大学 一种用于Micro-LED巨量转移的拾取结构及转移方法
CN109599354A (zh) * 2018-12-07 2019-04-09 广东工业大学 一种Micro-LED巨量转移的结构及方法
EP3936535B1 (fr) * 2019-03-04 2022-12-28 Japan Polyethylene Corporation Ionomère multidimensionnel
JP7507001B2 (ja) * 2020-04-23 2024-06-27 グンゼ株式会社 ダイシング用基体フィルム
JP2021195545A (ja) 2020-06-12 2021-12-27 エスケー イノベーション カンパニー リミテッドSk Innovation Co., Ltd. エチレン−（メタ）アクリル酸共重合体、及びそれを含む水分散組成物
CN112518141B (zh) * 2020-11-24 2022-07-15 无锡光导精密科技有限公司 一种激光诱导切割方法及装置
WO2022201656A1 (fr) * 2021-03-23 2022-09-29 リンテック株式会社 Film de matériau de base et feuille de traitement de pièce
CN113214746A (zh) * 2021-06-29 2021-08-06 郑州磨料磨具磨削研究所有限公司 一种隐形切割用紫外光固化胶带、制备方法及应用
KR20240031298A (ko) * 2021-07-08 2024-03-07 맥셀 주식회사 점착 테이프
CN117279984A (zh) * 2021-09-28 2023-12-22 琳得科株式会社 基材膜及工件加工用片

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101130670A (zh) * 2006-08-22 2008-02-27 日东电工株式会社 激光加工用粘接片
CN102206469A (zh) * 2010-03-31 2011-10-05 古河电气工业株式会社 晶片加工用胶带
CN102222633A (zh) * 2010-04-16 2011-10-19 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3845129B2 (ja) * 1995-06-20 2006-11-15 古河電気工業株式会社 半導体ウエハ固定用粘着テープ
JP4780828B2 (ja) * 2000-11-22 2011-09-28 三井化学株式会社 ウエハ加工用粘着テープ及びその製造方法並びに使用方法
JP4578050B2 (ja) * 2001-09-04 2010-11-10 グンゼ株式会社 ウェハダイシングテープ用基材
DE60309069T2 (de) * 2002-11-20 2007-05-31 E.I. Du Pont De Nemours And Co., Wilmington Mit einem organischen säuresalz modifizierte kaliumionomere und daraus hergestellte strukturen
JP4413499B2 (ja) * 2003-01-24 2010-02-10 古河電気工業株式会社 半導体ウェハー固定用粘着テープ
AU2005245892A1 (en) * 2004-05-12 2005-12-01 E. I. Du Pont De Nemours And Company Ionomer compositions suitable for use in antifog applications
JP4712468B2 (ja) * 2004-11-30 2011-06-29 古河電気工業株式会社 ダイシングダイボンドテープ
JP4526937B2 (ja) * 2004-12-02 2010-08-18 アキレス株式会社 半導体製造テープ用帯電防止基材フィルム
JP4873863B2 (ja) * 2005-01-14 2012-02-08 日東電工株式会社 レーザー加工品の製造方法及びレーザー加工用粘着シート
JP4744196B2 (ja) * 2005-05-31 2011-08-10 電気化学工業株式会社 粘着シート
JP4748518B2 (ja) * 2005-07-20 2011-08-17 古河電気工業株式会社 ダイシングダイボンドテープおよびダイシングテープ
JP4676398B2 (ja) * 2006-07-26 2011-04-27 古河電気工業株式会社 ダイシング用粘着テープ
CN101889032B (zh) * 2007-12-07 2012-10-24 三井-杜邦聚合化学株式会社 离聚物、含有该离聚物的树脂组合物、由该组合物形成的未拉伸膜、片材或成型体、以及具有该未拉伸膜层的层合体
JP5493460B2 (ja) * 2008-08-20 2014-05-14 日立化成株式会社 半導体装置の製造方法及びダイシングテープ一体型接着シート
US8497326B2 (en) * 2008-09-09 2013-07-30 E I Du Pont De Nemours And Company Antistatic ionomer composition and articles therewith
JP5124778B2 (ja) * 2008-09-18 2013-01-23 リンテック株式会社 レーザーダイシングシートおよび半導体チップの製造方法
JP2010202735A (ja) * 2009-03-02 2010-09-16 Dainippon Printing Co Ltd 粘着シート
JP2010215256A (ja) * 2009-03-16 2010-09-30 Sumitomo Chemical Co Ltd 電子部品収納容器用蓋材及び電子部品収納容器
JP2011040449A (ja) * 2009-08-07 2011-02-24 Du Pont Mitsui Polychem Co Ltd ダイシングテープ用基材、ダイシングテープ、半導体装置の製造方法
JP2011061097A (ja) * 2009-09-11 2011-03-24 Mitsui Chemicals Inc ダイシング用プロセステープ。
KR101682726B1 (ko) * 2009-10-15 2016-12-12 아키레스 가부시키가이샤 반도체 제조 공정용 테이프의 기재필름
JP2011210887A (ja) * 2010-03-29 2011-10-20 Furukawa Electric Co Ltd:The 放射線硬化型ウエハ加工用粘着テープ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101130670A (zh) * 2006-08-22 2008-02-27 日东电工株式会社 激光加工用粘接片
CN102206469A (zh) * 2010-03-31 2011-10-05 古河电气工业株式会社 晶片加工用胶带
CN102222633A (zh) * 2010-04-16 2011-10-19 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法

Also Published As

Publication number Publication date
KR101832297B1 (ko) 2018-02-26
KR20160086989A (ko) 2016-07-20
JPWO2013099778A1 (ja) 2015-05-07
TW201600582A (zh) 2016-01-01
KR20160049041A (ko) 2016-05-04
JP6247733B2 (ja) 2017-12-13
CN107057594A (zh) 2017-08-18
CN104011836A (zh) 2014-08-27
JP6073810B2 (ja) 2017-02-01
KR20140102756A (ko) 2014-08-22
TWI500731B (zh) 2015-09-21
TW201333152A (zh) 2013-08-16
KR101742647B1 (ko) 2017-06-01
WO2013099778A1 (fr) 2013-07-04
JP2017063210A (ja) 2017-03-30
TWI563061B (en) 2016-12-21
CN107057594B (zh) 2021-02-09

Similar Documents

Publication Publication Date Title
CN104011836B (zh) 激光切割用膜基材、激光切割用膜以及电子部件的制造方法
JP6617215B2 (ja) ダイシングシート
JP6472972B2 (ja) ダイシングテープ基材用樹脂組成物およびダイシングテープ基材
TWI823981B (zh) 切割膜基材用樹脂組成物、切割膜基材及切割膜
JP2016126995A (ja) 電池部材用フィルム
TW201505836A (zh) 應力緩和性膜、積層體、半導體用表面保護膜、半導體裝置的製造方法及樹脂改質劑
CN110178203B (zh) 切割膜基材及切割膜
JP4675064B2 (ja) 樹脂組成物及び積層体
KR20120112848A (ko) 표면 보호 필름
JP7437574B1 (ja) ダイシングフィルム基材用樹脂組成物、ダイシングフィルム基材、およびダイシングフィルム
JP2002321324A (ja) 金属貼り合わせ用ポリプロピレンフィルム
TW202302747A (zh) 切割膜基材用樹脂組成物、切割膜基材及切割膜
WO2024053490A1 (fr) Composition de résine pour substrat de film de découpage en dés, substrat de film de découpage en dés et film de découpage en dés
JP2003138071A (ja) エチレン系重合体組成物
JP2016026380A (ja) 電池部材用フィルム
JP2013216870A (ja) 熱可塑性樹脂組成物及びその製造方法、成形体、並びに多層材料
JPH05148462A (ja) 半導体ウエハ固定用粘着テープ
TW202402543A (zh) 背面研磨薄膜基材用樹脂組成物、背面研磨薄膜基材及背面研磨薄膜

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan, Japan

Patentee after: Mitsui-Dow Polymerization Chemical Co., Ltd.

Address before: Tokyo, Japan, Japan

Patentee before: Mitsui Du Pont Polychemical