CN102222633A - 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 - Google Patents
热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 Download PDFInfo
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- CN102222633A CN102222633A CN201110096944XA CN201110096944A CN102222633A CN 102222633 A CN102222633 A CN 102222633A CN 201110096944X A CN201110096944X A CN 201110096944XA CN 201110096944 A CN201110096944 A CN 201110096944A CN 102222633 A CN102222633 A CN 102222633A
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Classifications
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
本发明提供通过拉伸张力芯片接合薄膜恰当地断裂的热固型芯片接合薄膜。一种热固型芯片接合薄膜,用于以下方法:对半导体晶片照射激光形成改性区域后,通过用改性区域将半导体晶片断裂而由半导体晶片得到半导体元件的方法;或者在半导体晶片的表面形成未到达背面的沟后,进行半导体晶片的背面磨削,通过从背面露出沟而由半导体晶片得到半导体元件的方法,所述热固型芯片接合薄膜的特征在于,热固化前25℃下的断裂伸长率大于40%且不超过500%。本发明还提供切割/芯片接合薄膜及半导体装置的制造方法。
Description
技术领域
本发明涉及将例如半导体芯片等半导体元件胶粘固定到衬底或引线框等被粘物上时所使用的热固型芯片接合薄膜。另外,本发明涉及该热固型芯片接合薄膜与切割薄膜层叠而成的切割/芯片接合薄膜。另外,本发明涉及使用该切割/芯片接合薄膜制造半导体装置的方法。
背景技术
以往,在半导体装置的制造过程中,在将半导体芯片固着到引线框或电极构件上时使用银糊。所述固着处理通过将糊状胶粘剂涂布到引线框的芯片焊盘等上,在其上搭载半导体芯片并使糊状胶粘剂层固化来进行。
但是,糊状胶粘剂受其粘度行为或劣化等的影响而在涂布量或涂布形状等方面产生大的偏差。结果,所形成的糊状胶粘剂厚度不均匀,因此与半导体芯片相关的固着强度的可靠性不足。即,糊状胶粘剂的涂布量不够时,半导体芯片与电极构件间的固着强度降低,在后续的丝焊工序中半导体芯片剥离。另一方面,糊状胶粘剂的涂布量过多时,糊状胶粘剂一直流延到半导体芯片上从而产生特性不良,成品率或可靠性下降。这样的固着处理中的问题,随着半导体芯片的大型化而变得特别显著。因此,需要频繁地进行糊状胶粘剂的涂布量控制,从而对作业性或生产率造成影响。
在该糊状胶粘剂的涂布工序中,有独立地在引线框或形成的芯片上涂布糊状胶粘剂的方法。但是,该方法中,难以实现糊状胶粘剂层的均匀化,另外糊状胶粘剂的涂布需要特殊装置或长时间。因此,提出了在切割工序中胶粘保持半导体晶片并且在也提供安装工序所需的芯片固着用胶粘剂层的切割薄膜(例如,参考专利文献1)。
该切割薄膜,在支撑基材上以可剥离的方式设置有胶粘剂层,在该胶粘剂层的保持下切割半导体晶片,然后拉伸支撑基材将形成的芯片与胶粘剂层一同剥离,将其各个进行回收,并经由该胶粘剂层将其固着到引线框等被粘物上。
使用在切割薄膜上层叠芯片接合薄膜而得到的切割/芯片接合薄膜,在芯片接合薄膜的保持下切割半导体晶片的情况下,需要将该芯片接合薄膜与半导体晶片同时切割。不过,在使用金刚石刀片的一般切割方法中,受到切割时产生的热的影响有可能产生芯片接合薄膜与切割薄膜的粘连,并且由于切削屑的产生有可能产生半导体芯片之间的固着、切削屑附着到半导体芯片侧面等现象,因此需要降低切割速度,从而导致成本上升。
因此,近年来,提出了如下方法:在半导体晶片的表面形成沟,然后通过进行背面磨削而得到各个半导体芯片的方法(例如,参考专利文献2,以下也称为“DBG(Dicing Before Grinding:磨削前切割)法”);对半导体晶片上的预定分割线照射激光从而形成改性区域,由此可以容易地利用预定分割线将半导体晶片分割,然后通过施加拉伸张力使该半导体晶片断裂,而得到各个半导体晶片的方法(例如,参考专利文献3和4,以下也称为“隐形切割(ステルスダイシング)(注册商标)”)。根据这些方法,特别是在半导体晶片的厚度薄的情况下,可以减少碎片等不良情况的产生,并且与以往相比可以减少割缝宽度(カ-フ幅),因此可以提高半导体芯片的收率。
为了在芯片接合薄膜的保持下通过上述方法得到带有芯片接合薄膜的各个半导体芯片,需要利用拉伸张力使芯片接合薄膜断裂。因此,殷切期望开发可以通过拉伸张力恰当断裂的芯片接合薄膜。
在专利文献5中,公开了一种在DBG法或隐形切割中使用的胶粘片,其中,25℃下的断裂强度为0.1MPa以上且10MPa以下,并且断裂伸长率为1%以上且40%以下。但是,专利文献5的胶粘片的断裂伸长率为40%以下,因此例如在用于隐形切割时,在施加拉伸张力时有时比半导体芯片先断裂,从而有可能在与预定分割线不同的线上分割。
现有技术文献
专利文献
专利文献1:日本特开昭60-57642号公报
专利文献2:日本特开2003-007649号公报
专利文献3:日本特开2002-192370号公报
专利文献4:日本特开2003-338467号公报
专利文献5:国际公开第2004/109786号小册子
发明内容
本发明鉴于所述问题而创立,其目的在于提供芯片接合薄膜可以通过拉伸张力恰当断裂的热固型芯片接合薄膜,以及切割/芯片接合薄膜。
另外,本发明的另一目的在于提供通过拉伸张力可以使芯片接合薄膜恰当断裂的半导体装置的制造方法。
本发明人等为了解决现有问题对热固型芯片接合薄膜、以及该热固型芯片接合薄膜与切割薄膜层叠而得到的切割/芯片接合薄膜进行了研究。结果发现,通过将热固化前25℃下的断裂伸长率设定为大于40%且不超过500%,芯片接合薄膜可以通过拉伸张力恰当地断裂,从而完成了本发明。
即,本发明的热固型芯片接合薄膜,用于以下方法:对半导体晶片照射激光形成改性区域后,通过利用所述改性区域将所述半导体晶片断裂(隐形切割)而由半导体晶片得到半导体元件的方法;或者在半导体晶片的表面形成未到达背面的沟后,进行所述半导体晶片的背面磨削,通过从所述背面露出所述沟(DBG法)而由半导体晶片得到半导体元件的方法,所述热固型芯片接合薄膜的特征在于,热固化前25℃下的断裂伸长率大于40%且不超过500%。
通过隐形切割或者DBG法由半导体晶片得到半导体元件(例如,半导体芯片)时,通过对热固型芯片接合薄膜施加拉伸张力使热固型芯片接合薄膜断裂。根据所述构成,由于热固化前25℃下的断裂伸长率大于40%,因此可以防止容易地断裂,从而提高操作性。另外,所述断裂伸长率为500%以下,因此可以防止扩张时过度伸长,可以恰当地断裂。可见,根据所述构成,由于热固化前25℃下的断裂伸长率大于40%且不超过500%,因此通过隐形切割或DBG法由半导体晶片得到半导体元件时,可以通过拉伸张力将芯片接合薄膜恰当地断裂。特别是由于热固化前25℃下的断裂伸长率大于40%,因此通过隐形切割由半导体晶片得到半导体元件时,可以将芯片接合薄膜与半导体晶片同时断裂,从而可以通过预定分割线可靠地将芯片接合薄膜和半导体晶片断裂。
所述构成中,优选热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量(a)与25℃、10Hz下的拉伸储能模量(b)之比(b/a)为0.15~1。在对芯片接合薄膜施加拉伸张力使芯片接合薄膜断裂时,以往在-20~0℃的低温状态下进行。但是,在到达低温状态之前不能对芯片接合薄膜施加拉伸张力,因此存在制造效率低的问题。另外,由于在显著偏离室温的低温下施加拉伸张力,因此存在由于装置能力或外部环境导致施加拉伸张力时的温度偏离上述低温状态的问题。因此,要求在室温附近的温度条件(例如0~25℃)下使芯片接合薄膜断裂。根据所述构成,通过将所述比之比(b/a)设定为0.15~1,可以在该0~25℃的温度区域稳定地断裂芯片接合薄膜。结果,可以提高制造效率。
所述构成中,优选热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量为2500MPa~5000MPa。通过将热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量设定为2500MPa以上,可以提高芯片接合薄膜的结晶度,使扩张时的断裂性良好。另一方面,通过将热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量设定为5000MPa以下,可以提高芯片接合薄膜的晶片层压性。
所述构成中,优选热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量为700MPa~2500MPa。通过将热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量设定为700MPa以上,可以提高芯片接合薄膜的结晶度,使扩张时的断裂性良好。另一方面,通过将热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量设定为2500MPa以下,可以提高芯片接合薄膜的晶片层压性。
所述构成中,优选热固化前的玻璃化转变温度为25~60℃。通过将热固化前的玻璃化转变温度设定为25~60℃,可以良好地层压晶片。
所述构成中,优选热固化前通过动态粘弹性测定得到的-20℃、10Hz下的拉伸储能模量为2000MPa~4000MPa。通过将热固化前通过动态粘弹性测定得到的-20℃、10Hz下的拉伸储能模量设定为2000MPa以上,可以提高芯片接合薄膜的结晶度,使扩张时的断裂性良好。另一方面,通过设定为4000MPa以下,可以提高芯片接合薄膜的晶片层压性。
所述构成中,优选热固化前通过25℃、10Hz下的动态粘弹性测定得到的损耗模量为400MPa~1000MPa。通过将热固化前通过25℃、10Hz下的动态粘弹性测定得到的损耗模量设定为400MPa以上,可以提高芯片接合薄膜的结晶度,使扩张时的断裂性良好。另一方面,通过设定为1000MPa以下,可以提高芯片接合薄膜的晶片层压性。
所述构成中,优选含有环氧树脂、酚醛树脂及丙烯酸类树脂,并且设所述环氧树脂与所述酚醛树脂的合计重量为X、所述丙烯酸类树脂的重量为Y时,X/(X+Y)为0.3以上且小于0.9。随着环氧树脂和酚醛树脂的含量增加变得容易断裂,另一方面,在半导体晶片上的胶粘性下降。另外,随着丙烯酸类树脂的含量增加在粘贴时或操作时芯片接合薄膜变得难以破裂,从而作业性良好,另一方面,变得难以断裂。因此,通过将X/(X+Y)设定为0.3以上,在通过隐形切割由半导体晶片得到半导体元件时,可以更容易地将芯片接合薄膜与半导体晶片同时断裂。另外,通过将X/(X+Y)设定为小于0.9,可以使作业性良好。
另外,本发明的切割/芯片接合薄膜,为了解决所述课题,其特征在于,所述的热固型芯片接合薄膜层叠在基材上层叠有粘合剂层的切割薄膜上。
另外,半导体装置的制造方法,使用所述的切割/芯片接合薄膜制造半导体装置,其特征在于,包括以下工序:对半导体晶片的预定分割线照射激光而在所述预定分割线上形成改性区域的工序;将改性区域形成后的半导体晶片粘贴到所述切割/芯片接合薄膜上的工序;在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此利用所述预定分割线将所述半导体晶片和构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件的工序;将所述半导体元件与所述芯片接合薄膜一起拾取的工序;和将拾取的所述半导体元件经由所述芯片接合薄膜芯片接合到被粘物上的工序。
根据所述构成,通过在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此利用所述预定分割线将所述半导体晶片和构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件。由于不必使切割/芯片接合薄膜处于低温状态(低于0℃),因此将形成改性区域后的半导体晶片粘贴到切割/芯片接合薄膜上后,可以立即施加拉伸张力从而利用预定分割线将半导体晶片和芯片接合薄膜断裂,而形成半导体元件。结果,可以提高制造效率。另外,由于在室温附近的温度即0~25℃的条件下施加拉伸张力,因此难以因装置能力或外部环境导致施加拉伸张力时的温度偏离0~25℃。结果,可以提高成品率。
另外,根据所述构成,扩张速度为100mm/秒以上,因此可以容易地将半导体晶片和芯片接合薄膜基本同时断裂。另外,由于扩张速度为400mm/秒以下,因此可以防止切割薄膜断裂。
另外,根据所述构成,由于扩张量为6%以上,因此可以容易地使半导体晶片和芯片接合薄膜断裂。另外,由于扩张量为12%以下,因此可以防止切割薄膜断裂。
另外,本发明的半导体装置的制造方法,使用所述的切割/芯片接合薄膜制造半导体装置,其特征在于,包括以下工序:在半导体晶片的表面形成未到达背面的沟的工序;进行所述半导体晶片的背面磨削,使所述沟从所述背面露出的工序;将所述沟从所述背面露出的所述半导体晶片粘贴到所述切割/芯片接合薄膜上的工序;在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此将构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件的工序;将所述半导体元件与所述芯片接合薄膜一起拾取的工序;和将拾取的所述半导体元件经由所述芯片接合薄膜芯片接合到被粘物上的工序。
根据所述构成,通过在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此将构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件。由于不必使切割/芯片接合薄膜处于低温状态(低于0℃),因此将露出沟后的半导体晶片粘贴到切割/芯片接合薄膜上后,可以立即施加拉伸张力从而将芯片接合薄膜断裂,而形成半导体元件。结果,可以提高制造效率。另外,由于在室温附近的温度即0~25℃的条件下施加拉伸张力,因此难以因装置能力或外部环境导致施加拉伸张力时的温度偏离0~25℃。结果,可以提高成品率。
另外,根据所述构成,扩张速度为100mm/秒以上,因此可以容易地将芯片接合薄膜断裂。另外,由于扩张速度为400mm/秒以下,因此可以防止切割薄膜断裂。
另外,根据所述构成,由于扩张量为6%以上,因此可以容易地使芯片接合薄膜断裂。另外,由于扩张量为12%以下,因此可以防止切割薄膜断裂。
附图说明
图1是表示本发明的一个实施方式的切割/芯片接合薄膜的示意剖视图。
图2是表示本发明的另一实施方式的切割/芯片接合薄膜的示意剖视图。
图3是用于说明本实施方式的半导体装置的一个制造方法的示意剖视图。
图4是用于说明本实施方式的半导体装置的一个制造方法的示意剖视图。
图5(a)、(b)是用于说明本实施方式的半导体装置的一个制造方法的示意剖视图。
图6是用于说明本实施方式的半导体装置的一个制造方法的示意剖视图。
图7(a)和(b)是用于说明本实施方式的半导体装置的另一个制造方法的示意剖视图。
图8是用于说明本实施方式的半导体装置的另一个制造方法的示意剖视图。
标号说明
1基材
2粘合剂层
3、3’芯片接合薄膜(热固型芯片接合薄膜)
4半导体晶片
5半导体芯片
6被粘物
7焊线
8密封树脂
10、12切割/芯片接合薄膜
11切割薄膜
具体实施方式
(切割/芯片接合薄膜)
以下对本发明的切割/芯片接合薄膜进行说明。图1是表示本发明的一个实施方式的切割/芯片接合薄膜的示意剖视图。图2是表示本发明的另一实施方式的切割/芯片接合薄膜的示意剖视图。
如图1所示,切割/芯片接合薄膜10具有在切割薄膜11上层叠有芯片接合薄膜3的结构。切割薄膜11通过在基材1上层叠粘合剂层2而构成,芯片接合薄膜3设置在该粘合剂层2上。另外,本发明,如图2所示的切割/芯片接合薄膜12所示,可以是仅在半导体晶片粘贴部分形成芯片接合薄膜3’的结构。
所述基材1优选具有紫外线透射性,并且作为切割/芯片接合薄膜10、12的强度母体。例如可以列举:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、丙烯均聚物、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷树脂、金属(箔)、纸等。
作为基材1的材料,可以列举所述树脂的交联物等聚合物。所述塑料薄膜可以未拉伸使用,也可以根据需要进行单轴或双轴拉伸处理后使用。如果使用通过拉伸处理而具有热收缩性的树脂片,则切割后通过使该基材1热收缩而降低粘合剂层2与芯片接合薄膜3、3’的胶粘面积,可以容易地回收半导体芯片(半导体元件)。
为了提高与邻接层的密合性和保持性等,基材1的表面可以进行惯用的表面处理,例如铬酸处理、臭氧暴露、火焰暴露、高压电压暴露、电离辐射线处理等化学或物理处理、使用底涂剂(例如,后述的粘合物质)的涂布处理等。所述基材1,可以适当选择使用同种或异种材料,根据需要也可以将多种混合使用。另外,为了使基材1具有防静电性能,可以在所述基材1上设置包含金属、合金、它们的氧化物等的厚度约30~约500的导电物质的蒸镀层。基材1可以是单层也可以是2种以上的多层。
基材1的厚度没有特别限制,可以适当设定,一般为约5μm~约200μm。
所述粘合剂层2包含紫外线固化型粘合剂而构成。对于紫外线固化型粘合剂而言,通过紫外线照射使其交联度增大,可以容易地使其粘合力下降,通过仅对图2所示的粘合剂层2的与半导体晶片粘贴部分对应的部分2a照射紫外线,可以设置与其它部分2b的粘合力差。
另外,通过与图2所示的芯片接合薄膜3’相符地使紫外线固化型粘合剂层2固化,可以容易地形成粘合力显著下降的所述部分2a。在固化而粘合力下降的所述部分2a上粘贴芯片接合薄膜3’,因此粘合剂层2的所述部分2a与芯片接合薄膜3’的界面具有在拾取时容易剥离的性质。另一方面,未照射紫外线的部分具有充分的粘合力,形成所述部分2b。
如前所述,关于图1所示的切割/芯片接合薄膜10的粘合剂层2,由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合薄膜3粘合,能够确保切割时的保持力。这样,紫外线固化型粘合剂可以胶粘/剥离平衡良好地支撑用于将半导体芯片芯片接合到衬底等被粘物上的芯片接合薄膜3。关于图2所示的切割/芯片接合薄膜12的粘合剂层2,所述部分2b可以固定贴片环(ウエハリング)。
所述紫外线固化型粘合剂可以没有特别限制地使用具有碳碳双键等紫外线固化性官能团、并且显示粘合性的粘合剂。作为紫外线固化型粘合剂,可以例示例如,在丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏粘合剂中配合有紫外线固化性的单体成分或低聚物成分的添加型紫外线固化型粘合剂。
作为所述压敏胶粘剂,从半导体晶片或玻璃等避忌污染的电子部件的超纯水或醇等有机溶剂的清洁洗涤性等方面考虑,优选以丙烯酸类聚合物为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物,可以列举使用例如(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链或支链烷基酯等)及(甲基)丙烯酸环烷酯(例如,环戊酯、环己酯等)的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,本发明的“(甲基)”全部具有同样的含义。
所述丙烯酸类聚合物中,为了改善凝聚力和耐热性等,根据需要可以含有与能够与所述(甲基)丙烯酸烷基酯或环烷酯共聚的其它单体成分对应的单元。作为这样的单体成分,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基十二烷酯、(甲基)丙烯酸(4-羟基甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;丙烯酰磷酸-2-羟基乙酯等含磷酸基单体;丙烯酰胺;丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。
另外,所述丙烯酸类聚合物为了交联根据需要也可以含有多官能单体等作为共聚用单体成分。作为这样的多官能单体,可以列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体也可以使用一种或者两种以上。多官能单体的使用量从粘合特性等观点考虑优选为全部单体成分的30重量%以下。
所述丙烯酸类聚合物可以通过将单一单体或两种以上的单体混合物聚合而得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止污染洁净的被粘物等方面考虑,优选低分子量物质的含量小。从该观点考虑,丙烯酸类聚合物的数均分子量优选为约30万以上,更优选约40万至约300万。
另外,为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量,所述粘合剂中可以适当使用外部交联剂。作为外部交联方法的具体手段,可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺型交联剂等所谓的交联剂进行反应的方法。在使用外部交联剂的情况下,其使用量根据与应交联的基础聚合物的平衡以及根据作为粘合剂的使用用途进行适当确定。一般相对于所述基础聚合物100重量份优选5重量份以下。另外,下限值优选为0.1重量份以上。另外,粘合剂中根据需要除所述成分之外还可以使用各种增粘剂、抗老化剂等添加剂。
作为用于配合的所述紫外线固化性单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,紫外线固化性的低聚物成分可以列举聚氨酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量在约100至约30000的范围内是适当的。紫外线固化性的单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类来适当确定能够使粘合剂层的粘合力下降的量。一般而言,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约5至约500重量份、优选约70至约150重量份。
另外,作为紫外线固化型粘合剂,除前面说明过的添加型紫外线固化型粘合剂以外,还可以列举:使用在聚合物侧链或者主链中或主链末端具有碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂不需要含有或者不大量含有作为低分子量成分的低聚物成分等,因此低聚物成分等不会随时间推移在粘合剂中移动,可以形成具有稳定的层结构的粘合剂层。
所述具有碳碳双键的基础聚合物,可以没有特别限制地使用具有碳碳双键并且具有粘合性的基础聚合物。作为这样的基础聚合物,优选以丙烯酸类聚合物为基本骨架的基础聚合物。作为丙烯酸类聚合物的基本骨架,可以列举前面例示的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制,可以采用各种方法,从分子设计方面而言,在聚合物侧链引入碳碳双键是比较容易的。例如可以列举:预先将具有官能团的单体与丙烯酸类聚合物共聚后,使具有能够与该官能团反应的官能团及碳碳双键的化合物在保持碳碳双键的紫外线固化性的情况下与所得共聚物进行缩合或加成反应的方法。
作为这些官能团的组合例,可以列举:羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中,从容易跟踪反应的观点考虑,优选羟基与异氰酸酯基的组合。另外,如果是通过这些官能团的组合而生成所述具有碳碳双键的丙烯酸类聚合物的组合,则官能团可以在丙烯酸类聚合物和所述化合物的任意一个中,但在所述优选组合中,优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基的情况。此时,作为具有碳碳双键的异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。另外,作为丙烯酸类聚合物,可以使用将所述例示的含羟基单体或2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚这样的醚类化合物等共聚而得到的丙烯酸类聚合物。
所述内在型紫外线固化型粘合剂,可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合所述紫外线固化性的单体成分或低聚物成分。紫外线固化性的低聚物成分等通常相对于基础聚合物100重量份在30重量份的范围内,优选0~10重量份的范围。
所述紫外线固化型粘合剂中在通过紫外线等固化时含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2’-二甲氧基-2-苯基苯乙酮、2,2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-吗啉基)丙烷-1-酮等苯乙酮类化合物;苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物;联苯酰二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤代酮;酰基氧化膦;酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份例如为约0.05重量份~约20重量份。
另外,作为紫外线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中公开的、包含具有两个以上不饱合键的加聚性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物和羰基化合物、有机硫化合物、过氧化物、胺、盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
作为在所述粘合剂层2中形成所述部分2a的方法,可以列举在基材1上形成紫外线固化型粘合剂层2后,对所述部分2a局部地照射紫外线而使其固化的方法。局部的紫外线照射可以经由形成有与半导体晶片粘贴部分3a以外的部分3b等对应的图案的光掩模来进行。另外,可以列举点状照射紫外线使其固化的方法。紫外线固化型粘合剂层2的形成可以通过将设置在隔片上的粘合剂层转印到基材1上来进行。局部的紫外线照射也可以对隔片上设置的紫外线固化型粘合剂层2进行。
在切割/芯片接合薄膜10的粘合剂层2中,对粘合剂层2的一部分进行紫外线照射使得(所述部分2a的粘合力)<(其它部分2b的粘合力)。即,使用基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或者一部分被遮光的基材,在其上形成紫外线固化型粘合剂层2后进行紫外线照射,使与半导体晶片粘贴部分3a对应的部分固化,从而可以形成使粘合力下降的所述部分2a。作为遮光材料,可以通过印刷或蒸镀等在支撑薄膜上制作能够形成光掩模的遮光材料。由此,可以高效地制造本发明的切割/芯片接合薄膜10。
粘合剂层2的厚度没有特别限制,从防止芯片切割面的缺陷或者固定保持胶粘层的兼具性等方面考虑,优选为约1μm~约50μm、更优选2μm~30μm、进一步优选5μm~25μm。
切割薄膜11的与半导体晶片粘贴部分对应的部分2a的扩张时在25℃下的拉伸强度优选为15~80N,更优选20~70N。所述拉伸强度是试样宽度25mm、夹盘间距100mm、拉伸速度300mm/分钟条件下10%伸长时的强度。另外,切割薄膜11的与半导体晶片粘贴部分对应的部分2a的扩张时在25℃下的屈服点伸长率优选为80%以上,更优选85%以上。所述屈服点伸长率是在试样宽度10mm、夹盘间距50mm、拉伸速度300mm/分钟条件下测定时得到的应力-应变曲线的屈服点处的伸长率。通过将切割薄膜11的25℃下的拉伸强度以及屈服点伸长率设定在上述数值范围内,在通过对切割/芯片接合薄膜12施加拉伸张力将芯片接合薄膜3、3’断裂的工序(后述的芯片形成工序)中,可以不使切割薄膜11断裂。
芯片接合薄膜3、3’的热固化前25℃下的断裂伸长率大于40%且不超过500%。由于所述断裂伸长率大于40%且不超过500%,因此在通过对切割/芯片接合薄膜12施加拉伸张力将芯片接合薄膜3、3’断裂的工序(后述的芯片形成工序)中,可以通过拉伸张力将芯片接合薄膜3、3’恰当地断裂。特别是由于热固化前25℃下的断裂伸长率大于40%,因此在通过隐形切割由半导体晶片4得到半导体芯片5时,对切割/芯片接合薄膜12施加拉伸张力时,可以将芯片接合薄膜3、3’与半导体晶片4同时断裂,可以利用预定分割线4L将芯片接合薄膜3、3’和半导体晶片4可靠地断裂。所述断裂伸长率优选大于43%且不超过500%,更优选大于60%且不超过450%。另外,在芯片接合薄膜3、3’尺寸长的情况下,所述断裂伸长率只要在长度方向(MD)或宽度方向(TD)的至少一个方向满足上述数值范围即可。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量(a)与25℃、10Hz下的拉伸储能模量(b)之比(b/a)优选为0.15~1,更优选0.18~0.95,进一步优选0.2~0.9。对芯片接合薄膜3、3’施加拉伸张力使芯片接合薄膜3、3’断裂时,以往在-20~0℃的低温状态下进行。但是,在到达低温状态之前不能对芯片接合薄膜施加拉伸张力,因此存在制造效率低的问题。另外,由于设定为显著偏离室温的低温,因此存在由于装置能力或外部环境导致设定温度偏离上述低温状态的问题。因此,要求在室温附近的温度条件(例如0~25℃)下进行。因此,通过将所述比(b/a)设定为0.15~1,可以在该0~25℃的温度区域稳定地断裂芯片接合薄膜3、3’。结果,可以提高制造效率。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量优选为2500MPa~5000MPa,更优选2550MPa~4000MPa,进一步优选2600MPa~3800MPa。通过将热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量设定为2500MPa以上,芯片接合薄膜的结晶度提高,扩张时的断裂性变得良好。另一方面,通过将热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量设定为5000MPa以下,可以提高芯片接合薄膜的晶片层压性。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量优选为700MPa~2500MPa,更优选800MPa~2400MPa,进一步优选900MPa~2300MPa。通过将热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量设定为700MPa以上,芯片接合薄膜的结晶度提高,扩张时的断裂性变得良好。另一方面,通过将热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量设定为2500MPa以下,可以提高芯片接合薄膜的晶片层压性。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的-20℃、10Hz下的拉伸储能模量优选为2000MPa~4000MPa,更优选2500MPa~3800MPa,进一步优选2800MPa~3600MPa。通过将热固化前通过动态粘弹性测定得到的-20℃、10Hz下的拉伸储能模量设定为2000MPa以上,芯片接合薄膜的结晶度提高,扩张时的断裂性变得良好。另一方面,通过设定为4000MPa以下,可以提高芯片接合薄膜的晶片层压性。动态粘弹性测定得到的拉伸储能模量,是对于夹盘间距20mm、宽度5mm、厚度400μm的试样,使用动态粘弹性测定装置(RSA(III),Rheometric Scientific公司制)在升温速度5℃/分钟的条件下得到的值。
芯片接合薄膜3、3’热固化前通过25℃、10Hz下的动态粘弹性测定得到的损耗模量优选为400MPa~1000MPa,更优选450MPa~950MPa,进一步优选500MPa~900MPa。通过将热固化前通过25℃、10Hz下的动态粘弹性测定得到的损耗模量设定为400MPa以上,芯片接合薄膜的结晶度提高,扩张时的断裂性变得良好。另一方面,通过设定为1000MPa以下,可以提高芯片接合薄膜的晶片层压性。动态粘弹性测定得到的损耗模量,是对于夹盘间距20mm、宽度5mm、厚度400μm的试样,使用动态粘弹性测定装置(RSA(III),Rheometric Scientific公司制)在升温速度5℃/分钟的条件下得到的值。
另外,芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的0℃、900Hz下的拉伸储能模量(c)与25℃、10Hz下的拉伸储能模量(d)之比(c/d)优选为0.72~0.85。通过将所述比(c/d)设定为0.72以上,芯片接合薄膜的结晶度提高,扩张时容易变脆,从而断裂性提高。另外,通过将所述比(c/d)设定为0.85以下,可以提高芯片接合薄膜的晶片层压性。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的0℃、900Hz下的拉伸储能模量优选为5000MPa~6800MPa,更优选5100MPa~6700MPa,进一步优选5200MPa~6600MPa。通过将热固化前通过动态粘弹性测定得到的0℃、900Hz下的拉伸储能模量设定为5000MPa以上,芯片接合薄膜的结晶度提高,扩张时容易变脆,从而断裂性提高。另一方面,通过将热固化前通过动态粘弹性测定得到的0℃、900Hz下的拉伸储能模量设定为6800MPa以下,可以提高芯片接合薄膜的晶片层压性。
芯片接合薄膜3、3’热固化前通过动态粘弹性测定得到的25℃、900Hz下的拉伸储能模量优选为3000MPa~5500MPa,更优选3600MPa~5450MPa,进一步优选4000MPa~5400MPa。通过将热固化前通过动态粘弹性测定得到的25℃、900Hz下的拉伸储能模量设定为3000MPa以上,芯片接合薄膜的结晶度提高,扩张时容易变脆,从而断裂性提高。另一方面,通过将热固化前通过动态粘弹性测定得到的25℃、900Hz下的拉伸储能模量设定为5500MPa以下,可以提高芯片接合薄膜的晶片层压性。
芯片接合薄膜的层叠结构没有特别限制,例如,可以列举如芯片接合薄膜3、3’(参考图1、图2)仅由胶粘剂层单层构成的芯片接合薄膜,或者在芯材的单面或双面形成有胶粘剂层的多层结构的芯片接合薄膜。作为所述芯材,可以列举薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。在芯片接合薄膜为多层结构的情况下,多层结构的芯片接合薄膜整体的所述断裂伸长率、所述拉伸储能模量以及所述损耗模量等在所述数值范围内即可。
作为构成所述芯片接合薄膜3、3’的胶粘剂组合物,可以列举组合使用热塑性树脂与热固性树脂的组合物。
作为所述热固性树脂,可以列举酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、聚硅氧烷树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外,作为环氧树脂的固化剂,优选酚醛树脂。
作为所述环氧树脂,只要是通常作为胶粘剂组合物使用的环氧树脂则没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四(羟苯基)乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂或四(羟苯基)乙烷型环氧树脂。这是因为:这些环氧树脂与作为固化剂的酚醛树脂的反应性好,并且耐热性等优良。
另外,所述酚醛树脂作为所述环氧树脂的固化剂而使用,可以列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶酚醛树脂型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚醛树脂可以单独使用或者两种以上组合使用。这些酚醛树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚醛树脂的配合比例,例如以相对于所述环氧树脂成分中的环氧基1当量酚醛树脂中的羟基为0.5~2.0当量的方式进行配合是适当的。更优选0.8~1.2当量。即,这是因为:两者的配合比例如果在所述范围以外,则固化反应不充分,环氧树脂固化物的特性容易变差。
作为所述热塑性树脂,可以列举天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6或尼龙6,6等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者含氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中,特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸类树脂。
作为所述丙烯酸类树脂,没有特别限制,可以列举以一种或两种以上具有碳原子数30以下、特别是碳原子数4~18的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯为成分的聚合物(丙烯酸类共聚物)等。作为所述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者十二烷基等。
上述丙烯酸类树脂中,为了提高凝聚力,特别优选丙烯酸类共聚物。作为上述丙烯酸类共聚物,可以列举例如:丙烯酸乙酯与甲基丙烯酸甲酯的共聚物、丙烯酸与丙烯腈的共聚物、丙烯酸丁酯与丙烯腈的共聚物。
上述丙烯酸类树脂的玻璃化转变温度(Tg)优选为-30℃以上且30℃以下,更优选-20℃以上且15℃以下。通过将上述丙烯酸类树脂的玻璃化转变温度设定为-30℃以上,芯片接合薄膜变硬,断裂性提高,通过设定为30℃以下,低温下的晶片层压性提高。作为玻璃化转变温度为-30℃以上且30℃以下的丙烯酸类树脂,可以列举例如:ナガセケムテツクス株式会社制造:SG-708-6(玻璃化转变温度:6℃)、SG-790(玻璃化转变温度:-25℃)、WS-023(玻璃化转变温度:-5℃)、SG-80H(玻璃化转变温度:7.5℃)、SG-P3(玻璃化转变温度:15℃)。
另外,作为形成所述聚合物的其它单体,没有特别限制,可以列举例如:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体;马来酸酐或衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基十二烷酯或丙烯酸(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸单体;或者丙烯酰磷酸-2-羟基乙酯等含磷酸基单体。
所述热固性树脂的配合比例,只要是在规定条件下加热时芯片接合薄膜3、3’发挥作为热固型的功能的程度即可,没有特别限制,优选在5~60重量%的范围内,更优选10~50重量%的范围内。
所述芯片接合薄膜3、3’热固化前的玻璃化转变温度(Tg)优选为25~60℃,更优选25~55℃,进一步优选25~50℃。通过将热固化前的玻璃化转变温度设定为25℃~60℃,可以良好地将晶片进行层压。另外,玻璃化转变温度可以根据实施例所述的方法测定。
为了使芯片接合薄膜3、3’热固化前的玻璃化转变温度为25~60℃,例如,可以通过使所述环氧树脂和所述酚醛树脂中的至少一方含有一种以上熔点50℃以上的树脂来实现。作为熔点50℃以上的环氧树脂,可以列举:AER-8039(旭化成环氧制,熔点78℃)、BREN-105(日本化药制,熔点64℃)、BREN-S(日本化药制,熔点83℃)、CER-3000L(日本化药制,熔点90℃)、EHPE-3150(大赛璐化学制,熔点80℃)、EPPN-501HY(日本化药制,熔点60℃)、ESN-165M(新日铁化学制,熔点76℃)、ESN-175L(新日铁化学制,熔点90℃)、ESN-175S(新日铁化学制,熔点67℃)、ESN-355(新日铁化学制,熔点55℃)、ESN-375(新日铁化学制,熔点75℃)、ESPD-295(住友化学制,熔点69℃)、EXA-7335(大日本油墨制,熔点99℃)、EXA-7337(大日本油墨制,熔点70℃)、HP-7200H(大日本油墨制,熔点82℃)、TEPIC-SS(日产化学制,熔点108℃)、YDC-1312(东都化成制,熔点141℃)、YDC-1500(东都化成制,熔点101℃)、YL-6121HN(JER制,熔点130℃)、YSLV-120TE(东都化成制,熔点113℃)、YSLV-80XY(东都化成制,熔点80℃)、YX-4000H(JER制,熔点105℃)、YX-4000K(JER制,熔点107℃)、ZX-650(东都化成制,熔点85℃)、Epicoat 1001(JER制,熔点64℃)、Epicoat 1002(JER制,熔点78℃)、Epicoat 1003(JER制,熔点89℃)、Epicoat 1004(JER制,熔点97℃)、Epicoat 1006FS(JER制,熔点112℃)。其中,优选AER-8039(旭化成环氧制,熔点78℃)、BREN-105(日本化药制,熔点64℃)、BREN-S(日本化药制,熔点83℃)、CER-3000L(日本化药制,熔点90℃)、EHPE-3150(大赛璐化学制,熔点80℃)、EPPN-501HY(日本化药制,熔点60℃)、ESN-165M(新日铁化学制,熔点76℃)、ESN-175L(新日铁化学制,熔点90℃)、ESN-175S(新日铁化学制,熔点67℃)、ESN-355(新日铁化学制,熔点55℃)、ESN-375(新日铁化学制,熔点75℃)、ESPD-295(住友化学制,熔点69℃)、EXA-7335(大日本油墨制,熔点99℃)、EXA-7337(大日本油墨制,熔点70℃)、HP-7200H(大日本油墨制,熔点82℃)、YSLV-80XY(东都化成制,熔点80℃)、ZX-650(东都化成制,熔点85℃)、Epicoat 1001(JER制,熔点64℃)、Epicoat 1002(JER制,熔点78℃)、Epicoat 1003(JER制,熔点89℃)、Epicoat 1004(JER制,熔点97℃)。这是因为这些环氧树脂的熔点不过高(低于100℃),因此用于芯片接合薄膜时的晶片层压性良好。
作为熔点50℃以上的酚醛树脂,可以列举DL-65(明和化成制,熔点65℃)、DL-92(明和化成制,熔点92℃)、DPP-L(日本石油制,熔点100℃)、GS-180(群荣化学制,熔点83℃)、GS-200(群荣化学制,熔点100℃)、H-1(明和化成制,熔点79℃)、H-4(明和化成制,熔点71℃)、HE-100C-15(住友化学制,熔点73℃)、HE-510-05(住友化学制,熔点75℃)、HF-1(明和化成制,熔点84℃)、HF-3(明和化成制,熔点96℃)、MEH-7500(明和化成制,熔点111℃)、MEH-7500-3S(明和化成制,熔点83℃)、MEH-7800-3L(明和化成制,熔点72℃)、MEH-7851(明和化成制,熔点78℃)、MEH-7851-3H(明和化成制,熔点105℃)、MEH-7851-4H(明和化成制,熔点130℃)、MEH-7851S(明和化成制,熔点73℃)、P-1000(荒川化学制,熔点63℃)、P-180(荒川化学制,熔点83℃)、P-200(荒川化学制,熔点100℃)、VR-8210(三井化学制,熔点60℃)、XLC-3L(三井化学制,熔点70℃)、XLC-4L(三井化学制,熔点62℃)、XLC-LL(三井化学制,熔点75℃)。其中,优选DL-65(明和化成制,熔点65℃)、DL-92(明和化成制,熔点92℃)、GS-180(群荣化学制,熔点83℃)、H-1(明和化成制,熔点79℃)、H-4(明和化成制,熔点71℃)、HE-100C-15(住友化学制,熔点73℃)、HE-510-05(住友化学制,熔点75℃)、HF-1(明和化成制,熔点84℃)、HF-3(明和化成制,熔点96℃)、MEH-7500-3S(明和化成制,熔点83℃)、MEH-7800-3L(明和化成制,熔点72℃)、MEH-7851(明和化成制,熔点78℃)、MEH-7851S(明和化成制,熔点73℃)、P-1000(荒川化学制,熔点63℃)、P-180(荒川化学制,熔点83℃)、VR-8210(三井化学制,熔点60℃)、XLC-3L(三井化学制,熔点70℃)、XLC-4L(三井化学制,熔点62℃)、XLC-LL(三井化学制,熔点75℃)。这是因为这些酚醛树脂的熔点不过高(低于100℃),因此用于芯片接合薄膜时的晶片层压性良好。
所述芯片接合薄膜3、3’中,含有环氧树脂、酚醛树脂及丙烯酸类树脂,设所述环氧树脂与所述酚醛树脂的合计重量为X、所述丙烯酸类树脂的重量为Y时,X/(X+Y)优选为0.3以上且小于0.9,更优选0.35以上且小于0.85,进一步优选0.4以上且小于0.8。随着环氧树脂和酚醛树脂的含量增加,芯片接合薄膜3、3’变得容易断裂,另一方面,在半导体晶片4上的胶粘性下降。另外,随着丙烯酸类树脂的含量增加,在粘贴时或操作时芯片接合薄膜3、3’变得难以破裂,从而作业性变良好,另一方面,变得难以断裂。因此,通过将X/(X+Y)设定为0.3以上,在通过隐形切割由半导体晶片4得到半导体元件5时,可以容易地将芯片接合薄膜3、3’与半导体晶片4同时断裂。另外,通过将X/(X+Y)设为小于0.9,可以使作业性良好。
在预先使本发明的芯片接合薄膜3、3’进行某种程度的交联的情况下,制作时,可以添加与聚合物的分子末端的官能团等反应的多官能化合物作为交联剂。由此,可以提高高温下的胶粘特性,改善耐热性。
作为所述交联剂,可以使用现有公知的交联剂。特别是更优选甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1,5-萘二异氰酸酯、多元醇与二异氰酸酯的加成产物等多异氰酸酯化合物。交联剂的添加量相对于所述聚合物100重量份通常优选设定为0.05~7重量份。交联剂的量超过7重量份时,胶粘力下降,因此不优选。另一方面,低于0.05重量份时,凝聚力不足,因此不优选。另外,根据需要可以与这样的多异氰酸酯化合物一起含有环氧树脂等其它多官能化合物。
另外,芯片接合薄膜3、3’中根据其用途可以适当配合填料。配合填料可以赋予导电性或提高导热性、调节弹性模量等。作为所述填料,可以列举无机填料和有机填料,从提高操作性、提高导热导电性、调节熔融粘度、赋予触变性等特性的观点考虑,优选无机填料。作为所述无机填料,没有特别限制,可以列举例如:氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶二氧化硅、非晶二氧化硅等。这些填料可以单独使用或者两种以上组合使用。从提高导热导电性的观点考虑,优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅。另外,从上述各特性的平衡好的观点考虑,优选结晶二氧化硅或者非晶二氧化硅。另外,为了赋予导电性、提高导热导电性等,可以使用导电物质(导电填料)作为无机填料。作为导电填料,可以列举将银、铝、金、铜、镍、导电合金等制成球形、针形、片状的金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。
所述填料的平均粒径优选为0.005~10μm,更优选0.005~1μm。通过将所述填料的平均粒径设定为0.005μm以上,可以使对被粘物的润湿性以及胶粘性良好。另外,通过设定为10μm以下,可以充分地发挥为了赋予上述各特性而添加的填料的效果,同时可以确保耐热性。另外,填料的平均粒径是利用例如光度式粒度分布计(HORIBA制,装置名:LA-910)求得的值。
关于所述胶粘剂层,含有环氧树脂和酚醛树脂作为热固性树脂,含有丙烯酸类树脂作为热塑性树脂,并且含有填料,设所述环氧树脂、所述酚醛树脂和所述丙烯酸类树脂的合计重量为A,所述填料的重量为B时,B/(A+B)优选为0.1以上且0.7以下,更优选0.1以上且0.65以下,进一步优选0.1以上且0.6以下。通过将上述值设定为0.7以下,可以防止拉伸储能模量变高,并且可以使对被粘物的润湿性以及胶粘性良好。另外,通过将上述值设定为0.1以上,可以通过拉伸张力恰当地将芯片接合薄膜断裂。
另外,所述芯片接合薄膜3、3’中除了所述填料以外根据需要可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。作为所述阻燃剂,可以列举例如:三氧化二锑、五氧化二锑、溴化环氧树脂等。这些物质可以单独使用或者两种以上组合使用。作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
芯片接合薄膜3、3’的厚度(层叠体的情况下为总厚度)没有特别限制,例如可以从1μm~200μm的范围内选择,优选5μm~100μm,更优选10μm~80μm。
所述切割/芯片接合薄膜10、12的芯片接合薄膜3、3’优选由隔片保护(未图示)。隔片具有在供给实际应用之前作为保护芯片接合薄膜3、3’的保护材料的功能。另外,隔片还可以作为向粘合剂层2上转印芯片接合薄膜3、3’时的支撑基材使用。隔片在向切割/芯片接合薄膜的芯片接合薄膜3、3’上粘贴工件时剥离。作为隔片,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯,也可以使用由含氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行了表面涂敷的塑料薄膜或纸等。
本实施方式的切割/芯片接合薄膜10、12例如如下制作。
首先,基材1可以通过以往公知的制膜方法制成膜。作为该制膜方法,可以例示例如:压延制膜法、有机溶剂中的流延法、密闭体系中的吹塑法、T形模头挤出法、共挤出法、干式层压法等。
然后,在基材1上涂布粘合剂组合物形成涂膜后,在规定条件下使该涂膜干燥(根据需要进行加热交联),形成粘合剂层2。作为涂布方法,没有特别限制,可以列举例如:辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,例如,在干燥温度80~150℃、干燥时间0.5~5分钟的范围内进行。另外,可以将粘合剂组合物涂布到隔片上形成涂膜后,在所述干燥条件下将涂膜干燥而形成粘合剂层2。之后,将粘合剂层2与隔片一起粘贴到基材1上。由此,制作切割薄膜11。
芯片接合薄膜3、3’例如如下制作。
首先,制作作为芯片接合薄膜3、3’的形成材料的胶粘剂组合物溶液。在该胶粘剂组合物溶液中,如前所述,配合有所述胶粘剂组合物、或填料、其它各种添加剂等。
然后,在基材隔片上以达到规定厚度的方式涂布胶粘剂组合物溶液形成涂膜后,在规定条件下使该涂膜干燥形成胶粘剂层。作为涂布方法,没有特别限制,可以列举例如:辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件,例如在干燥温度70~160℃、干燥时间1~5分钟的范围内进行。另外,可以将粘合剂组合物溶液涂布到隔片上形成涂膜后,在所述干燥条件下将涂膜干燥而形成胶粘剂层。之后,将胶粘剂层与隔片一起粘贴到基材隔片上。
接着,分别从切割薄膜11和胶粘剂层上将隔片剥离,以胶粘剂层与粘合剂层成为粘贴面的方式将二者粘贴。粘贴例如可以通过压接来进行。此时,层压温度没有特别限制,例如,优选30~50℃,更优选35~45℃。另外,线压没有特别限制,例如,优选0.1~20kgf/cm,更优选1~10kgf/cm。然后,将胶粘剂层上的基材隔片剥离,得到本实施方式的切割/芯片接合薄膜。
(半导体装置的制造方法)
以下,参考图3~图8对使用切割/芯片接合薄膜12制造半导体装置的方法进行说明。图3~图6是用于说明本实施方式的半导体装置的一个制造方法的示意剖视图。首先,对半导体晶片4的预定分割线4L照射激光以在预定分割线4L上形成改性区域。本方法是将聚焦点对准半导体晶片的内部,沿格子状的预定分割线照射激光,从而通过基于多光子吸收的烧蚀在半导体晶片内部形成改性区域的方法。作为激光照射条件,在以下条件的范围内进行适当调节即可。
<激光照射条件>
(A)激光
激光源 半导体激光激励Nd:YAG激光器
波长 1064nm
激光光点截面积 3.14×10-8cm2
振荡模式 Q开关脉冲
重复频率 100kHz以下
脉冲宽度 1μs以下
输出功率 1mJ以下
激光品质 TEM00
偏振光特性 线性偏振光
(B)聚焦用透镜
倍数 100倍以下
NA 0.55
对激光波长的透射率100%以下
(C)载置有半导体衬底的载置台的移动速度280mm/秒以下
另外,关于照射激光在预定分割线4L上形成改性区域的方法,如日本专利第3408805号公报或日本特开2003-338567号公报所详述,在此省略详细说明。
然后,如图4所示,将改性区域形成后的半导体晶片4压接在芯片接合薄膜3’上,将其胶粘保持而固定(安装工序)。本工序通过压接辊等按压工具进行按压的同时进行。安装时的粘贴温度没有特别限制,优选在40~80℃的范围内。这是因为:可以有效防止半导体晶片4的翘曲并且可以减少切割/芯片接合薄膜的伸缩的影响。
然后,通过对切割/芯片接合薄膜12施加拉伸张力,利用预定分割线4L将半导体晶片4和芯片接合薄膜3’断裂,从而形成半导体芯片5(芯片形成工序)。本工序例如可以使用市售的扩晶装置来进行。具体而言,如图5(a)所示,在粘贴有半导体晶片4的切割/芯片接合薄膜12的粘合剂层2的周边部粘贴切割环31后,固定到扩晶装置32上。然后,如图5(b)所示,使上推部33上升,而对切割/芯片接合薄膜12施加张力。
该芯片形成工序在0~25℃的条件下进行,优选在10~25℃的条件下进行,更优选在15~25℃的条件下进行。由于芯片形成工序在0~25℃的条件下进行,不必使芯片接合薄膜3’处于低温状态,因此安装工序后,可以立即实施芯片形成工序。结果,可以提高制造效率。另外,由于在室温附近的0~25℃的温度条件下进行,因此难以因装置能力或外部环境而造成设定温度偏离0~25℃。结果,可以提高成品率。
另外,在芯片形成工序中,扩张速度(上推部上升的速度)为100~400mm/秒,优选100~350mm/秒,更优选100~300mm/秒。通过将扩张速度设定为100mm/秒以上,可以容易地将半导体晶片4和芯片接合薄膜3’同时断裂。另外,通过将扩张速度设定为400mm/秒以下,可以防止切割薄膜11断裂。
另外,在芯片形成工序中,扩张量为6%~12%。所述扩张量在所述数值范围内可以根据形成的芯片尺寸适当调节。另外,本发明中,扩张量是将扩张前的切割薄膜的表面积设为100%时通过扩张而增加的表面积的值(%)。通过将扩张量设定为6%以上,可以使半导体晶片4和芯片接合薄膜3容易断裂。另外,通过将扩张量设定为12%以下,可以防止切割薄膜11断裂。
这样,通过对切割/芯片接合薄膜12施加拉伸张力,可以以半导体晶片4的改性区域为起点沿半导体晶片4的厚度方向产生破裂,并且使与半导体晶片4紧贴的芯片接合薄膜3’断裂,可以得到带有芯片接合薄膜3’的半导体芯片5。
然后,为了将胶粘固定在切割/芯片接合薄膜12上的半导体芯片5剥离,进行半导体芯片5的拾取(拾取工序)。拾取的方法没有特别限制,可以使用现有公知的各种拾取方法。例如可以列举:用针从切割/芯片接合薄膜12一侧将各个半导体芯片5向上推,通过拾取装置拾取被上推的半导体芯片5的方法等。
在此,由于粘合剂层2为紫外线固化型,因此在对该粘合剂层2照射紫外线后进行拾取。由此,粘合剂层2对芯片接合薄膜3’的粘合力下降,半导体芯片5变得容易剥离。结果,可以在不损伤半导体芯片5的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制,可以根据需要适当设定。另外,作为紫外线照射使用的光源,可以使用所述的光源。
然后,如图6所示,将拾取的半导体芯片5经由芯片接合薄膜3’芯片接合到被粘物6上(暂时固着工序)。作为被粘物6,可以列举:引线框、TAB薄膜、衬底或者另外制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物、也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底,可以使用现有公知的衬底。另外,作为所述引线框,可以使用Cu引线框、42合金引线框等金属引线框或者由玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等制成的有机衬底。但是,本发明不限于这些,也包括在胶粘固定半导体元件、与半导体元件电连接后可以使用的电路衬底。
芯片接合薄膜3’的暂时固着时在25℃下的剪切胶粘力对于被粘物6优选为0.2MPa以上,更优选0.2~10MPa。芯片接合薄膜3’的剪切胶粘力为至少0.2MPa以上时,在丝焊工序时受到该工序中的超声波振动或加热而在芯片接合薄膜3’与半导体芯片5或被粘物6的胶粘面处产生剪切变形的情况少。即,半导体元件受到丝焊时的超声波振动而活动的情况少,由此可以防止丝焊的成功率下降。另外,芯片接合薄膜3’的暂时固着时在175℃下的剪切胶粘力对于被粘物6优选为0.01MPa以上,更优选0.01~5MPa。
然后,进行用焊线7将被粘物6的端子部(内部引线)的前端与半导体芯片5上的电极焊盘(未图示)电连接的丝焊(丝焊工序)。作为所述焊线,可以使用例如金线、铝线或铜线等。丝焊在温度为80~250℃的范围,优选80~220℃的范围内进行。另外,其加热时间为数秒~数分钟。接线在加热达到所述温度范围的状态下通过超声波的振动能与加压的压接能的组合来进行。本工序可以在不进行芯片接合薄膜3a的热固化的情况下实施。另外,本工序的过程中半导体芯片5和被粘物6不利用芯片接合薄膜3a固着。
然后,利用密封树脂8将半导体芯片5密封(密封工序)。本工序为了保护在被粘物6上搭载的半导体芯片5或焊线7而进行。本工序通过用模具将密封用树脂成形来进行。作为密封树脂8,例如可以使用环氧类的树脂。树脂密封时的加热温度通常为在175℃下进行60~90秒,但是,本发明不限于此,也可以例如在165~185℃下进行数分钟固化。由此,将密封树脂固化,并且经由芯片接合薄膜3将半导体芯片5与被粘物6固着。即,本发明中,即使在不进行后述的后固化工序的情况下,本工序中也可以进行利用芯片接合薄膜3的固着,可以有助于减少制造工序数以及缩短半导体装置的制造时间。
所述后固化工序中,使在所述密封工序中固化不充分的密封树脂8完全固化。密封工序中即使在芯片接合薄膜3a未完全热固化的情况下,在本工序中也可以与密封树脂8一起实现芯片接合薄膜3a的完全热固化。本工序中的加热温度根据密封树脂的种类而不同,例如在165~185℃的范围内,加热时间为约0.5小时~约8小时。
在上述实施方式中,对于将带有芯片接合薄膜3’的半导体芯片5暂时固着到被粘物6上后不使芯片接合薄膜3’完全热固化而进行丝焊工序的情况进行了说明。但是,本发明中,也可以进行将带有芯片接合薄膜3’的半导体芯片5暂时固着到被粘物6上后,使芯片接合薄膜3’热固化,之后进行丝焊工序的通常的丝焊工序。此时,热固化后的芯片接合薄膜3’优选在175℃下具有0.01MPa以上剪切胶粘力,更优选0.01~5MPa。这是因为,通过使热固化后的175℃下的剪切胶粘力为0.01MPa以上,可以防止丝焊工序时的超声波振动或加热引起在芯片接合薄膜3’与半导体芯片5或被粘物6的胶粘面上产生剪切变形。
另外,本发明的切割/芯片接合薄膜,也可以优选用于将多个半导体芯片层叠进行三维安装的情况。此时,可以在半导体芯片之间层叠芯片接合薄膜和隔片,也可以在半导体芯片之间不层叠隔片仅层叠芯片接合薄膜,可以根据制造条件或用途等适当变更。
以下,对于采用在半导体晶片的表面形成沟,然后进行背面磨削的工序的半导体装置的制造方法进行说明。
图7和图8是用于说明本实施方式的半导体装置的其它制造方法的示意剖视图。首先,如图7(a)所示,利用旋转刀片41在半导体晶片4的表面4F上形成未到达背面4R的沟4S。另外,形成沟4S时,半导体晶片4由未图示的支撑基材支撑。沟4S的深度可以根据半导体晶片4的厚度或扩张条件适当设定。然后,如图7(b)所示,以与表面4F接触的方式将半导体芯片4支撑在保护基材42上。之后,利用磨削磨石45进行背面磨削,从背面4R使沟4S露出。另外,在半导体晶片上粘贴保护基材42的作业可以使用现有公知的粘贴装置,背面磨削也可以使用现有公知的磨削装置。
然后,如图8所示,在切割/芯片接合薄膜12上压接沟4S露出的的半导体晶片4,将其胶粘保持而固定(暂时固着工序)。之后,将保护基材42剥离,使用扩晶装置32对切割/芯片接合薄膜12施加张力。由此,将芯片接合薄膜3’断裂,形成半导体芯片5(芯片形成工序)。另外,芯片形成工序中的温度、扩张速度、扩张量,与照射激光在预定分割线4L上形成改性区域的情况同样。后面的工序也与通过照射激光在预定分割线4L上形成改性区域的情况同样,因此省略说明。
实施例
以下,对本发明的优选实施例进行详细的例示说明。但是,该实施例中所述的材料或配合量不用于限制本发明,除非具有特定的限定记载。
(实施例1)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004,熔点97℃)
280重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L,熔点62℃)
306重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6,玻璃化转变温度6℃)
100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R)
237重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜A。
(实施例2)
在本实施例2中,将上述(a)的环氧树脂的添加量变更为270重量份,将上述(b)的酚醛树脂的添加量变为296重量份,除此以外与所述实施例1同样操作,制作本实施例的芯片接合薄膜B。
(实施例3)
在本实施例3中,将上述(a)的环氧树脂的添加量变更为113重量份,将上述(b)的酚醛树脂的添加量变为121重量份,除此以外与所述实施例1同样操作,制作本实施例的芯片接合薄膜C。
(实施例4)
在本实施例4中,将上述(a)的环氧树脂的添加量变更为40重量份,将上述(b)的酚醛树脂的添加量变更为41重量份,除此以外与所述实施例1同样操作,制作本实施例的芯片接合薄膜D。
(实施例5)
在本实施例5中,将上述(a)的环氧树脂的添加量变更为14重量份,将上述(b)的酚醛树脂的添加量变更为17重量份,除此以外与所述实施例1同样操作,制作本实施例的芯片接合薄膜E。
(比较例1)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004,熔点97℃)
173重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L,熔点62℃)
227重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-P3,玻璃化转变温度15℃)
100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R)
371重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜F。
(比较例2)
在本比较例2中,将上述(a)的环氧树脂的添加量变更为11重量份,将上述(b)的酚醛树脂的添加量变更为13重量份,除此以外与所述实施例1同样操作,制作本比较例的芯片接合薄膜G。
(断裂伸长率)
对于芯片接合薄膜A~G,将其分别切割为长度30mm、厚度25μm、宽度10mm的条形测定片。然后,使用拉伸试验机(テンツロン、岛津制作所公司制造),在拉伸速度0.5mm/分钟、夹盘间距20mm的条件下进行拉伸,并通过下述式得到断裂伸长率。结果如表1所示。
断裂伸长率(%)=(((断裂时的夹盘间长度(mm))-20)/20)×100
(热固化前的玻璃化转变温度的测定)
对于芯片接合薄膜A~G,在40℃的条件下重叠到厚度为100μm后,切割为宽度10mm的条形测定片。然后,使用动态粘弹性测定装置(RSA(III),Rheometric Scientific公司制),在频率10Hz、升温速度5℃/分钟的条件下测定-30~280℃下的损耗角正切(tanδ)。由此时的tanδ的峰值得到的玻璃化转变温度如表1所示。
(10Hz下的拉伸储能模量和损耗模量的测定)
对于芯片接合薄膜A~G,分别制成长度30mm、宽度5mm、厚度400μm的短条状。然后,使用动态粘弹性测定装置(RSA(III),Rheometric Scientific公司制),在夹盘间距20mm、频率10Hz、升温速度5℃/分钟的条件下测定-30~100℃下的拉伸储能模量及损耗模量。此时的-20℃下的拉伸储能模量、0℃下的拉伸储能模量(a)、25℃下的拉伸储能模量(b)、以及25℃下的损耗模量如表1所示。另外,比(b/a)如表1所示。
(断裂的确认)
<采用通过照射激光而在预定分割线4L上形成改性区域的工序(工序1)的情况>
作为激光加工装置,使用株式会社东京精密制ML300-Integration,将聚焦点对准半导体晶片内部,沿格子状(10mm×10mm)的预定分割线从半导体晶片的表面一侧照射激光,在半导体晶片内部形成改性区域。半导体晶片使用硅晶片(厚度75μm、外径12英寸)。另外,激光照射条件如下进行。
(A)激光
激光源 半导体激光激励Nd:YAG激光器
波长 1064nm
激光光点截面积 3.14×10-8cm2
振荡模式 Q开关脉冲
重复频率 100kHz
脉冲宽度 30ns
输出 20μJ/脉冲
激光品质 TEM0040
偏振光特性 线性偏振光
(B)聚焦用透镜
倍数 50倍
NA 0.55
对激光波长的透过率60%
(C)载置有半导体衬底的载置台的移动速度100mm/秒
在芯片接合薄膜A~G上分别粘贴进行了激光预处理的半导体晶片后,进行断裂试验。断裂试验在扩张温度0℃、10℃、25℃的各个条件下进行。扩张速度为400mm/秒,扩张量为6%。关于断裂试验的结果,对于半导体晶片的中央部100个芯片,计数利用预定分割线将芯片和芯片接合薄膜良好断裂的芯片数。但是,对于比较例1而言,在半导体晶片上未粘贴芯片接合薄膜F,并且,芯片接合薄膜F脆从而导致作业性差,因此不能进行测定。结果如表2所示。
<采用在半导体晶片的表面形成沟,然后进行背面磨削的工序(工序2)的情况>
在半导体晶片(厚度500μm)上通过刀片切割加工形成格子状(10mm×10mm)的切沟。使切沟的深度为100μm。
然后,用保护胶带保护该半导体晶片的表面,并进行背面磨削直到厚度为75μm,得到分割后的各个半导体芯片(10mm×10mm×75μm)。将其与芯片接合薄膜A~G分别粘贴后,进行断裂试验。断裂试验在扩张温度0℃、10℃、25℃的各个条件下进行。扩张速度为400mm/秒,扩张量为6%。关于断裂试验的结果,对于半导体晶片的中央部100个芯片,计数芯片接合薄膜良好断裂的芯片数。但是,对于比较例1而言,在半导体晶片上未粘贴芯片接合薄膜F,并且,芯片接合薄膜F脆从而导致作业性变差,因此不能进行测定。结果如表2所示。
表2
(结果)
从表2的结果可以看出,当为热固化前25℃下的断裂伸长率大于40%且不超过500%的芯片接合薄膜A~G时,在工序1中确认芯片与芯片接合薄膜利用预定分割线良好地断裂。另外,在工序2中,确认芯片接合薄膜可以良好地断裂。
(实施例6)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004) 54重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 71重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 277重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜J。
(实施例7)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004) 114重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 121重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 237重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜K。
(实施例8)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004) 271重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 296重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 237重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜L。
(实施例9)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004) 44重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 56重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 246重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜M。
(比较例3)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 1004) 10重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 14重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 111重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜N。
(比较例4)
使下述(a)~(d)溶解于甲乙酮中,得到浓度23.6重量%的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制,Epicoat 827) 32重量份
(b)酚醛树脂(三井化学株式会社制,ミレツクスXLC-4L) 37重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,SG-708-6) 100重量份
(d)球形二氧化硅(アドマテツクス株式会社制,SO-25R) 240重量份
将该胶粘剂组合物溶液涂布到由经聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上以后,在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜O。
(断裂伸长率)
对于芯片接合薄膜J~O,通过与上述实施例1~5以及比较例1~2同样的方法得到断裂伸长率。结果如表3所示。
(900Hz下的拉伸储能模量的测定)
对于芯片接合薄膜J~O,分别制成长度30mm、宽度5mm、厚度400μm的短条状。然后,使用固体粘弹性测定装置(DVE-V4,レォロジ-公司制),在夹盘间距20mm、频率900Hz、升温速度5℃/分钟的条件下测定-30~100℃下的拉伸储能模量。此时的0℃下的拉伸储能模量(c)及25℃下的拉伸储能模量(d)如表3所示。另外,比(c/d)如表3所示。
(断裂的确认)
对于芯片接合薄膜J~O,通过与上述实施例1~5以及比较例1~2同样的方法进行断裂试验。结果如表3所示。
(结果)
从表3的结果可以看出,当为热固化前25℃下的断裂伸长率大于40%且不超过500%的芯片接合薄膜J~O时,在工序1中确认芯片与芯片接合薄膜利用预定分割线良好地断裂。另外,在工序2中,确认芯片接合薄膜可以良好地断裂。
Claims (11)
1.一种热固型芯片接合薄膜,用于以下方法:
对半导体晶片照射激光形成改性区域后,通过利用所述改性区域将所述半导体晶片断裂而由半导体晶片得到半导体元件的方法;或者在半导体晶片的表面形成未到达背面的沟后,进行所述半导体晶片的背面磨削,通过从所述背面露出所述沟而由半导体晶片得到半导体元件的方法,
所述热固型芯片接合薄膜的特征在于,
热固化前25℃下的断裂伸长率大于40%且不超过500%。
2.如权利要求1所述的热固型芯片接合薄膜,其特征在于,
热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量(a)与25℃、10Hz下的拉伸储能模量(b)之比(b/a)为0.15~1。
3.如权利要求2所述的热固型芯片接合薄膜,其特征在于,
热固化前通过动态粘弹性测定得到的0℃、10Hz下的拉伸储能模量为2500MPa~5000MPa。
4.如权利要求2所述的热固型芯片接合薄膜,其特征在于,
热固化前通过动态粘弹性测定得到的25℃、10Hz下的拉伸储能模量为700MPa~2500MPa。
5.如权利要求2所述的热固型芯片接合薄膜,其特征在于,
热固化前的玻璃化转变温度为25~60℃。
6.如权利要求1所述的热固型芯片接合薄膜,其特征在于,
热固化前通过动态粘弹性测定得到的-20℃、10Hz下的拉伸储能模量为2000MPa~4000MPa。
7.如权利要求1所述的热固型芯片接合薄膜,其特征在于,
热固化前通过25℃、10Hz下的动态粘弹性测定得到的损耗模量为400MPa~1000MPa。
8.如权利要求2所述的热固型芯片接合薄膜,其特征在于,
含有环氧树脂、酚醛树脂及丙烯酸类树脂,
设所述环氧树脂与所述酚醛树脂的合计重量为X、所述丙烯酸类树脂的重量为Y时,X/(X+Y)为0.3以上且小于0.9。
9.一种切割/芯片接合薄膜,其特征在于,权利要求1~8中任一项所述的热固型芯片接合薄膜层叠在基材上层叠有粘合剂层的切割薄膜上。
10.一种半导体装置的制造方法,使用权利要求9所述的切割/芯片接合薄膜制造半导体装置,其特征在于,包括以下工序:
对半导体晶片的预定分割线照射激光而在所述预定分割线上形成改性区域的工序,
将改性区域形成后的半导体晶片粘贴到所述切割/芯片接合薄膜上的工序,
在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此利用所述预定分割线将所述半导体晶片和构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件的工序,
将所述半导体元件与所述芯片接合薄膜一起拾取的工序,和
将拾取的所述半导体元件经由所述芯片接合薄膜芯片接合到被粘物上的工序。
11.一种半导体装置的制造方法,使用权利要求9所述的切割/芯片接合薄膜制造半导体装置,其特征在于,包括以下工序:
在半导体晶片的表面形成未到达背面的沟的工序,
进行所述半导体晶片的背面磨削,使所述沟从所述背面露出的工序,
将所述沟从所述背面露出的所述半导体晶片粘贴到所述切割/芯片接合薄膜上的工序,
在0~25℃的条件下,对所述切割/芯片接合薄膜施加拉伸张力使得扩张速度为100~400mm/秒、扩张量为6%~12%,由此将构成所述切割/芯片接合薄膜的芯片接合薄膜断裂,而形成半导体元件的工序,
将所述半导体元件与所述芯片接合薄膜一起拾取的工序,和
将拾取的所述半导体元件经由所述芯片接合薄膜芯片接合到被粘物上的工序。
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Also Published As
Publication number | Publication date |
---|---|
TWI441894B (zh) | 2014-06-21 |
KR101144415B1 (ko) | 2012-05-10 |
US20110256666A1 (en) | 2011-10-20 |
JP2011228399A (ja) | 2011-11-10 |
JP4976522B2 (ja) | 2012-07-18 |
KR20110115982A (ko) | 2011-10-24 |
CN102222633B (zh) | 2014-07-09 |
TW201141981A (en) | 2011-12-01 |
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