JP6566703B2 - デバイスチップの製造方法 - Google Patents
デバイスチップの製造方法 Download PDFInfo
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- JP6566703B2 JP6566703B2 JP2015090644A JP2015090644A JP6566703B2 JP 6566703 B2 JP6566703 B2 JP 6566703B2 JP 2015090644 A JP2015090644 A JP 2015090644A JP 2015090644 A JP2015090644 A JP 2015090644A JP 6566703 B2 JP6566703 B2 JP 6566703B2
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- JP
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- Prior art keywords
- wafer
- die bonding
- adhesive
- liquid die
- bonding adhesive
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000853 adhesive Substances 0.000 claims description 88
- 230000001070 adhesive effect Effects 0.000 claims description 85
- 239000007788 liquid Substances 0.000 claims description 57
- 238000000227 grinding Methods 0.000 claims description 35
- 230000001681 protective effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 239000007921 spray Substances 0.000 description 16
- 239000012790 adhesive layer Substances 0.000 description 13
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Die Bonding (AREA)
Description
11a 表面
11b 裏面
13 デバイス
15 溝
17 デバイスチップ
21 保護部材
21a 第1面
21b 第2面
23 液状ダイボンディング用接着剤
A 間隔
B 厚さ
2 切削装置
4 チャックテーブル
6 切削ユニット
8 スピンドルハウジング
10 切削ブレード
12 研削装置
14 チャックテーブル
14a 保持面
16 研削ユニット
18 スピンドルハウジング
20 スピンドル
22 ホイールマウント
24 研削ホイール
26 ホイール基台
28 研削砥石
32 スプレーコーティング装置
34 チャックテーブル
34a 保持面
36 スプレーユニット(スプレー)
38 支持アーム
40 スプレーノズル
42 硬化装置
44 テーブル
44a 保持面
46 光源
52 インクジェット装置
54 テーブル
54a 保持面
56 インクジェットノズル
Claims (1)
- 複数の分割予定ラインで区画された表面側の各領域にそれぞれデバイスを備えるウェーハから、各デバイスに対応する複数のデバイスチップを製造するデバイスチップの製造方法であって、
該デバイスチップの仕上がり厚さに相当する深さの溝を該分割予定ラインに沿ってウェーハの該表面側に形成する溝形成ステップと、
ウェーハの該表面に保護部材を貼着し、ウェーハの裏面を研削して該溝を該裏面側に露出させ、ウェーハを個々の該デバイスチップに分割する研削ステップと、
該研削ステップを実施した後、分割されたウェーハの該裏面に液状ダイボンディング用接着剤を噴射して該液状ダイボンディング用接着剤を隣接する該デバイスチップ間に充填することなく且つウェーハの該表面まで到達させないようにウェーハの該裏面に塗布する接着剤塗布ステップと、
該接着剤塗布ステップを実施した後、該液状ダイボンディング用接着剤を硬化させる硬化ステップと、を備え、
該接着剤塗布ステップでは、隣接する該デバイスチップの間隔の半分よりもウェーハの該裏面に塗布される該液状ダイボンディング用接着剤の厚さが小さくなるように該液状ダイボンディング用接着剤の供給量を調整し、隣接する該デバイスチップ間で該液状ダイボンディング用接着剤同士の接触を防止することを特徴とするデバイスチップの製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015090644A JP6566703B2 (ja) | 2015-04-27 | 2015-04-27 | デバイスチップの製造方法 |
TW105105708A TWI682447B (zh) | 2015-04-27 | 2016-02-25 | 元件晶片的製造方法 |
KR1020160042274A KR102503524B1 (ko) | 2015-04-27 | 2016-04-06 | 디바이스칩의 제조 방법 |
CN201610235712.0A CN106098620A (zh) | 2015-04-27 | 2016-04-15 | 器件芯片的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015090644A JP6566703B2 (ja) | 2015-04-27 | 2015-04-27 | デバイスチップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016207936A JP2016207936A (ja) | 2016-12-08 |
JP6566703B2 true JP6566703B2 (ja) | 2019-08-28 |
Family
ID=57487342
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015090644A Active JP6566703B2 (ja) | 2015-04-27 | 2015-04-27 | デバイスチップの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6566703B2 (ja) |
KR (1) | KR102503524B1 (ja) |
CN (1) | CN106098620A (ja) |
TW (1) | TWI682447B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018125479A (ja) * | 2017-02-03 | 2018-08-09 | 株式会社ディスコ | ウェーハの加工方法 |
JP6842311B2 (ja) * | 2017-02-07 | 2021-03-17 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019024038A (ja) | 2017-07-24 | 2019-02-14 | 株式会社ディスコ | ウェーハの加工方法 |
JP2019107750A (ja) * | 2017-12-20 | 2019-07-04 | 株式会社ディスコ | 板状物の加工方法 |
KR102290199B1 (ko) * | 2018-11-13 | 2021-08-20 | (주)다이나테크 | 테이프를 대신하는 박막필름의 형성 방법 |
CN110797315B (zh) * | 2019-11-06 | 2021-06-11 | 烟台睿创微纳技术股份有限公司 | 一种晶圆级封装分割方法及晶圆级封装器件 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000182995A (ja) | 1998-12-14 | 2000-06-30 | Mitsumi Electric Co Ltd | 半導体装置の製造方法 |
JP2002100588A (ja) * | 2000-09-22 | 2002-04-05 | Shinkawa Ltd | 半導体装置の製造方法 |
JP3539934B2 (ja) * | 2001-02-14 | 2004-07-07 | 株式会社東京精密 | ウェーハ分割方法およびウェーハ分割装置 |
JP2005019525A (ja) | 2003-06-24 | 2005-01-20 | Disco Abrasive Syst Ltd | 半導体チップの製造方法 |
JP2005116739A (ja) * | 2003-10-07 | 2005-04-28 | Disco Abrasive Syst Ltd | 半導体チップの製造方法 |
KR20080030267A (ko) * | 2006-09-29 | 2008-04-04 | 삼성전자주식회사 | 다이 어태치막 형성방법, 형성장치 및 그 방법을 이용한반도체 패키지 |
JP4818187B2 (ja) * | 2007-04-16 | 2011-11-16 | 株式会社東芝 | 半導体装置の製造方法 |
KR20110055977A (ko) * | 2009-11-20 | 2011-05-26 | 주식회사 하이닉스반도체 | 반도체 패키지 제조용 장비 및 이를 이용한 반도체 패키지 제조방법 |
JP4976522B2 (ja) * | 2010-04-16 | 2012-07-18 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法 |
JP5993845B2 (ja) * | 2010-06-08 | 2016-09-14 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 先ダイシング法を行う微細加工されたウェーハへの接着剤の被覆 |
JP5665511B2 (ja) * | 2010-12-10 | 2015-02-04 | 株式会社東芝 | 半導体装置の製造方法、製造プログラム、および製造装置 |
JP5659033B2 (ja) * | 2011-02-04 | 2015-01-28 | 株式会社東芝 | 半導体装置の製造方法 |
JP2011181951A (ja) * | 2011-05-02 | 2011-09-15 | Toshiba Corp | 半導体装置の製造方法 |
-
2015
- 2015-04-27 JP JP2015090644A patent/JP6566703B2/ja active Active
-
2016
- 2016-02-25 TW TW105105708A patent/TWI682447B/zh active
- 2016-04-06 KR KR1020160042274A patent/KR102503524B1/ko active IP Right Grant
- 2016-04-15 CN CN201610235712.0A patent/CN106098620A/zh active Pending
Also Published As
Publication number | Publication date |
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KR20160127642A (ko) | 2016-11-04 |
TW201709301A (zh) | 2017-03-01 |
KR102503524B1 (ko) | 2023-02-23 |
TWI682447B (zh) | 2020-01-11 |
CN106098620A (zh) | 2016-11-09 |
JP2016207936A (ja) | 2016-12-08 |
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