CN106469681A - 晶片的加工方法 - Google Patents
晶片的加工方法 Download PDFInfo
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Abstract
提供晶片的加工方法,对于采用先划片的情况下的半导体器件的背面,不使生产性恶化而对各个器件敷设固晶用树脂。一种晶片的加工方法,在该晶片中,在正面上由交叉的多条分割预定线划分而形成有多个器件,该方法具有如下的工序:保护部件配设工序,在被分割成各个器件芯片的晶片的正面上配设对该正面进行保护的保护部件;树脂敷设工序,将液状的固晶用树脂涂布在晶片的背面上并使其固化,从而将固晶用的树脂敷设在各个器件芯片的背面上;以及分离工序,将背面上敷设有该树脂的该器件芯片从晶片分离。
Description
技术领域
本发明涉及晶片的加工方法,在晶片的背面所具有的多个器件芯片上形成固晶(die bond)用树脂。
背景技术
在IC、LSI等中使用的半导体器件的制造工艺中,将在正面上借助分割预定线划分而形成有多个器件的晶片分割成各个器件芯片,从而形成半导体器件芯片。并且,通过对该半导体器件芯片进行封装而将其应用于移动电话、个人计算机等各种电子设备。
分割得到的半导体器件芯片被胶接(粘结)在引线框架(金属制基板)等上,作为对该半导体器件芯片的背面敷设用于与引线框架粘结的胶接材料的方法,公知如下的方法:在被分割成各个器件芯片之前的晶片的背面上粘接与该晶片大致相同大小的DAF(die-attach film:粘片膜),从晶片的正面侧通过划片将晶片分割成各个器件芯片,并且与各个器件芯片对应地将胶接材料切断,将分割得到的各个器件芯片从该晶片分离而取出各个器件芯片,从而得到在背面上敷设有胶接材料的半导体器件芯片(例如,参照专利文献1)。
在采用上述的胶接材料的敷设方法的情况下,以如下操作作为前提:从背面侧进行磨削(薄化)以使晶片达到希望的厚度,并在将该DAF粘接于磨削后的背面上之后从正面侧进行划片,将晶片分割成各个器件芯片。
然而,在采用通过使用切削刀具从正面侧进行划片以设置出深度相当于完工厚度的分离槽然后对背面进行磨削而分割成各个器件芯片的所谓的被称为先划片的技术的情况下,由于与完成背面磨削同时地,晶片被分割成各个器件芯片,所以难以采用上述的方法。因此,当对采用了先划片的情况下的器件芯片的背面敷设作为胶接材料的例如固晶用树脂的情况下,尝试了如下的方式:在分割成各个半导体器件芯片之后,在将各个半导体器件芯片从晶片取出之前,将固晶用的树脂膜粘接于晶片的背面整体,从晶片的正面的分离槽侧采取照射激光光线等方式而与该半导体器件芯片对应地对该膜进行分割(例如,参照专利文献2)。另外,作为沿着分割预定线形成深度相当于器件芯片的完工厚度的分离槽的方法,并不仅限于借助上述切削刀具,也能够通过蚀刻等来形成上述分离槽(例如,参照专利文献3)。
专利文献1:日本特开2000-182995号公报
专利文献2:日本特开2002-118081号公报
专利文献3:日本特开2006-294913号公报
在采用了上述的先划片的情况下的敷设固晶用树脂的方法中,产生了如下问题:需要区别于半导体器件的分割而对粘接在背面上的固晶用的树脂膜进行切断,会成为比较复杂的工序。进一步说,对于结束了划片后所执行的背面磨削而被分割成各个半导体器件芯片后的晶片的分割预定线而言,存在因背面磨削时的从磨削磨具所施加的负荷而导致与分割前的分割预定线相比其宽度和位置发生变化且直线性受损等可能性,也存在很难通过物理的加工构件沿着该分割预定线进行分割的担心等,存在生产性恶化的问题。
发明内容
本发明是鉴于上述事实而完成的。其主要的技术的课题在于提供晶片的加工方法,对于采用先划片的情况下的半导体器件的背面,不使生产性恶化而对各个器件敷设固晶用树脂。
为了解决上述主要的技术课题,根据本发明,提供一种晶片的加工方法,在该晶片中,在正面上由交叉的多条分割预定线划分而形成有多个器件,该晶片的加工方法具有如下的工序:保护部件配设工序,在被分割成各个器件芯片的晶片的正面上配设对该正面进行保护的保护部件;树脂敷设工序,将液状的固晶用树脂涂布在晶片的背面上并使其固化,从而将固晶用的树脂敷设在各个器件芯片的背面上;以及分离工序,将背面上敷设有该树脂的该器件芯片从晶片分离。
优选该保护部件配设工序包含如下的步骤:分离槽形成步骤,在配设该保护部件之前,形成深度相当于该器件芯片的完工厚度的分离槽;保护部件粘接步骤,将保护部件粘接在形成有该分离槽的该晶片的正面上;以及分割步骤,对该晶片进行薄化而使该分离槽在该晶片的背面露出,将该晶片分割成各个器件芯片。
在该分离槽形成步骤中,能够通过沿着分割预定线使切削刀具切入、湿蚀刻或干蚀刻、沿着分割预定线照射激光光线中的任一种方式,形成具有相当于器件芯片的完工厚度的深度的分离槽。
在该分割步骤中,优选对晶片的背面进行磨削而将其薄化,使分离槽在晶片的背面露出。
优选在该树脂敷设工序之后,实施如下的移换工序:在敷设有该树脂的晶片的背面上粘接粘合带,并且利用具有对该晶片进行收纳的开口的框架隔着该粘合带对晶片进行支承,并从该晶片的正面将保护部件去除,在实施该移换工序之后,从该粘合带拾取器件芯片而实施该分离工序。
优选该树脂敷设工序包含如下的步骤:保持步骤,使该晶片的背面露出而将该晶片保持在能够旋转的工作台上;涂布步骤,使该工作台旋转并使该液状树脂成为雾状而涂布在晶片的背面上;以及敷设步骤,对涂布在该晶片的背面上的液状树脂施加外界刺激而使其固化,从而将该树脂敷设在晶片的背面上。
该涂布步骤优选包含如下的操作:使该液状树脂成为雾状而涂布在晶片的背面上从而在各个器件芯片的背面上形成薄膜层,之后,进一步与该薄膜层重叠地层积薄膜层而完成希望的厚度,而且,优选一次性涂敷的该薄膜层以3~7μm的厚度形成。
根据本发明的晶片的加工方法,能够在分割得到的各个器件芯片的背面上以液态的形式涂布固晶用的树脂,与各个器件芯片对应地敷设固晶用的树脂。因此,即使在如以往技术那样通过先划片而得到了各个器件芯片的情况下,也不需要另行照射激光光线而对DAF与器件芯片对应地进行分割等的工序,不需要复杂的工序而提高了生产性。
附图说明
图1的(a)、(b)是示出用于执行分离槽形成步骤的切削装置的一部分的立体图和晶片的A-A剖视图。
图2的(a)、(b)是示出安装保护部件的工序的立体图。
图3的(a)、(b)是示出对晶片的背面进行磨削而对器件进行分割的分割工序的立体图。
图4是示出在树脂敷设工序中涂布液状的固晶用树脂的工序的立体图。
图5是示出在树脂敷设工序中对液状的固晶用树脂照射紫外线的工序的立体图。
图6是示出在移换工序中剥离保护部件的工序的立体图。
图7是示出将器件芯片从晶片分离的分离工序的剖视图。
标号说明
10:主轴单元;11:主轴外壳;12:旋转主轴;13:切削刀具;21:器件;22:分离槽;23:保护带(保护部件);30:卡盘工作台;33:磨削磨轮;50:涂布单元;51:涂布喷嘴;52:混合单元;53:摇动单元;54:高压空气容器;55:液体树脂容器;60:固晶用树脂层;70:分离装置;71:框架保持部件;72:夹具;73:扩张滚筒;720:支承构件。
具体实施方式
以下,参照附图对本发明的晶片的加工方法的优选的实施方式进行详细地说明。
(保护部件配设工序)
在图1中示出了执行分离槽形成步骤的状态,沿着形成在半导体晶片W的正面侧的分割预定线形成深度相当于器件芯片的完工厚度的分离槽。
如图1的(a)所示,通过具有主轴单元10的切削装置(省略了装置整体的图示)来执行上述分离槽形成步骤。该主轴单元10具有对固定在主轴12的前端部的切削刀具13进行保持的主轴外壳11。以规定的厚度(例如,700μm)形成的加工前的该半导体晶片W其正面20a侧被分割预定线划分成多个区域,在该被划分的各区域内形成有器件21。使与主轴12一起高速旋转的切削刀具13相对于背面侧20b侧被吸引保持在切削装置的保持工作台(省略图示)上的半导体晶片W下降而使其切入半导体晶片W,并使该保持工作台与切削刀具13在加工进给方向上相对移动,由此,如作为图1的(a)的A-A剖视图而示出的图1的(b)所示,以相当于沿着分割预定线的器件芯片的完工厚度(例如,50μm)的深度形成规定的槽宽度(例如,30μm)的分离槽22。另外,图1的(b)为了方便说明而强调并记载了分离槽22,并没有按照实际的尺寸。
该切削装置构成为:能够按照针对沿着切削刀具13的切削方向的加工进给方向、与半导体晶片W平行且与该加工进给方向垂直的分度进给方向、以及使切削刀具13朝向半导体晶片W上下移动的切割方向中的任意一个方向预先存储的程序进行控制,而在半导体晶片W上的所有的分割预定线上形成与上述同样的分离槽22,当该分离槽形成步骤结束时,从切削装置的保持工作台取出半导体晶片W。另外,虽然上述分离槽22的深度被设定为相当于器件芯片的完工厚度,但在通过后述的磨削装置进行磨削并磨削加工至希望的完工厚度时,只要作为结果分割成各个器件芯片即可,可以设定为比完工厚度稍微深些。
如图2的(a)所示,该分离槽形成步骤结束,在所取出的半导体晶片W的正面20a侧粘接用于保护器件21的保护部件即保护带23(保护部件粘接步骤,参照图2的(b)),并移换到将该半导体晶片W分割成各个器件芯片的分割步骤。
根据图3对分割步骤进行说明。如图3的(a)所示,以将该保护带23侧作为下表面的方式将粘接有保护带23的半导体晶片W定位并固定在磨削装置所具有的卡盘工作台30上。卡盘工作台30构成为能够通过未图示的电动机而旋转,其上表面部由具有微细的通气孔的多孔陶瓷材料形成,并与未图示的吸引构件连通。通过使未图示的吸引构件进行动作,这样构成的卡盘工作台30对载置在该卡盘工作台30的上表面即保持面上的半导体晶片W进行吸引保持。
在磨削装置的卡盘工作台30的上方具有由未图示的伺服电动机驱动的主轴31,在被设定在相对于卡盘工作台30的中心偏心的位置的主轴31的下端安装有安装座32。通过螺栓将用于对吸引保持在卡盘工作台30上的半导体晶片W进行磨削的磨削磨轮33牢固地固定在安装座32上。该磨削装置具有磨削进给构件,该磨削进给构件用于使由上述主轴31、安装座32、磨削磨轮33以及未图示的伺服电动机构成的磨削单元在作为上下方向的磨削进给方向上移动。
通过上述磨削进给构件将磨削磨轮33压接在吸引保持于卡盘工作台30上的半导体晶片W上。此时,以卡盘工作台30大致300rpm、磨削磨轮33大致6000rpm的旋转速度在箭头方向上进行旋转驱动,并以1μm/秒的速度朝向下方磨削进给。当一边通过未图示的接触式或非接触式的厚度测量仪对半导体晶片W的厚度进行测量一边将半导体晶片W磨削至希望的完工厚度(50μm)时,如图3的(b)所示,在上述的分离槽形成步骤中形成的分离槽22在背面侧露出,其结果,半导体晶片W被分割成各个器件芯片。这样,当晶片被分割成各个器件芯片时,变为在被分割成各个器件芯片的晶片的正面上配设有对该正面进行保护的保护部件的状态,本发明的保护部件配设工序结束。
(树脂敷设工序)
根据图4、5对本发明的树脂敷设工序进行说明。在上述的保护部件配设工序结束之后,执行保持步骤,如图4所示,从卡盘工作台30取出半导体晶片W,将在上述分割步骤中被磨削的该半导体晶片W的背面侧作为上表面而使正面侧保持在树脂敷设装置(省略了装置整体的图示)的保持工作台40上。该保持工作台40也具有与上述卡盘工作台30同样的结构,构成为能够在通过未图示的吸引构件进行吸引保持的同时通过未图示的伺服电动机进行旋转。
在通过上述保持步骤将半导体晶片W保持在保持工作台40上之后,通过设置在树脂敷设装置的保持工作台40附近的涂布单元50来执行涂敷步骤。该涂布单元50包含:涂布喷嘴51,其以其前端部51a位于保持工作台40上所保持的半导体晶片W的上方的方式延伸;混合单元52,其对后述的液状的固晶用树脂(液状树脂)和高压空气进行混合而提供到涂布喷嘴51侧;摇动单元53,其具有使该涂布单元50的涂布喷嘴51沿着半导体晶片W的上表面平行地摇动(图中箭头)的未图示的空气电动机;高压空气容器54,其对混合单元52提供高压空气;液状树脂容器55,其对混合单元52提供固晶用的液状树脂。
在该高压空气容器54中具有未图示的空气泵和溢流阀,构成为在工作中进行控制以使该容器内总是处于恒定的压力(例如,0.3MPa),并能够根据需要朝向混合单元52提供高压空气。并且,在液状树脂容器55内填充有固晶用的树脂,并构成为能够通过内置的泵以恒定的压力朝向混合单元52提供固晶用的树脂,其中,该固晶用的树脂在正常状态下维持液态,并因施加外界刺激而固化,作为胶接剂而发挥功能。另外,作为该固晶用的液状树脂,采用作为外界刺激照射紫外线从而固化的紫外线固化型粘结剂。作为该紫外线固化型粘结剂,例如可以采用Honghow Specialty Chemicals Inc.(鸿浩特用化学品股份有限公司)生产的商品名为“HP20VL”或“ST20VL”的粘结剂。另外,除此之外也可以使用作为外界刺激施加规定的热量从而固化的填充有银的环氧树脂粘结剂,例如,Ablestik Laboratories(爱博斯迪科)生产的商品名为“Ablebond 8200c”的粘结剂等。
在混合单元52内设置有供上述高压空气通过的未图示的缩径部,能够通过细管从相对于该缩径部垂直的方向提供上述液状树脂。构成为:在从涂布喷嘴51的前端部51a喷雾出该液状树脂的情况下,从高压空气容器54提供高压空气,从该液状树脂容器55提供液状树脂,当高压空气通过混合单元52内的该缩径部时,液状树脂因文丘里效果从细管被吸出并且被微粒化,能够从涂布喷嘴51的前端部51a朝向半导体晶片W的背面呈雾状地喷射。另外,该混合单元52的构造并不限定于此。可以直接利用作为一般熟知的涂装用具而使用的空气刷等结构。
对从上述涂布喷嘴51朝向半导体晶片W的背面喷雾出该液状树脂的涂布步骤进行进一步地说明。当通过上述的保持步骤将半导体晶片W保持在保持工作台40上时,上述涂布单元50被设定为待机状态。此时,涂布喷嘴51的前端部51a被设置在附近而不位于半导体晶片W的上方。这是为了在喷雾开始时不使粒径大的液状树脂滴落至半导体晶片W上。在使液状树脂从该涂布喷嘴51喷雾的情况下,首先保持工作台40以例如500rpm的速度开始旋转。接着,从高压空气容器54开始高压空气的提供,之后,从液状树脂容器55开始液状树脂的提供。并且,在涂布喷嘴51的前端部51a未处于半导体晶片W的上方的状态下使来自前端部51a的喷雾开始之后,开始对摇动单元53的驱动。也就是说,一边使半导体晶片W以上述速度旋转,一边使由该摇动单元53驱动的涂布喷嘴51的前端部51a在半导体晶片W的上方往复移动。然后,在涂布喷嘴51借助摇动单元53仅进行设定次数(例如5个往复)的往复移动之后,返回到涂布喷嘴51的前端部51a不处于半导体晶片W之上的待机状态,并停止液状树脂的提供和高压空气的提供,也停止保持工作台40的旋转。并且,不是一次性地进行大量地喷雾,如上述的那样将一次的涂布处理限定为5个往复,由此,使由液状树脂形成的薄膜层达到3~7μm。
在进行了上述的第一次涂布处理之后,留出使喷雾在半导体晶片W的各个器件芯片上的液状的固晶用的树脂稳定的时间(例如,30秒左右),再次执行与上述同样的涂布液状树脂的处理而进一步形成液状树脂的薄膜层。关于形成该薄膜层的涂布处理的次数,仅执行如下的次数即可:通过后述的敷设步骤而固化后的结果,该固晶用树脂的最终的厚度能够达到10~50μm。通过执行规定的涂布处理的次数,该涂布步骤结束。这样,在本实施方式的涂敷步骤中,从涂敷喷嘴51的前端部51a喷雾出高压的液状树脂从而在各个器件芯片上形成薄膜层。此时,分离槽22中也被喷雾了高压的液状树脂,液状树脂堆积在粘接于分离槽22的底部的保护带23上。然而,由于该堆积的液状树脂非常薄,所以即使多次重复涂敷步骤,分离槽22也不会被液状树脂完全填满,堆积在被分割成各个器件芯片的背面上的液状树脂独立地堆积在每个器件芯片上。
在该涂布步骤完成之后,如图5所示,通过作为施加外界刺激的构件的紫外线照射构件100对涂布有液状的该固晶用树脂的面照射紫外线而进行固化,由此,能够在被分割成各个器件芯片的半导体晶片W的背面上敷设该固晶用树脂层60(敷设步骤)。以上,通过执行保持步骤~敷设步骤,树脂敷设工序结束。另外,在采用了热固化型树脂来作为液状的固晶用树脂的情况下,代替上述紫外线的照射,执行由加热器等进行的加热而对该液状树脂进行固化,在各个器件芯片的背面上敷设该固晶用树脂层60。
如上述的那样,通过采用在半导体晶片W的背面上以液状的形式涂布固晶用的树脂再进行固化的结构,能够不使固晶用树脂流入存在于各个器件芯片之间的、在分离槽形成工序中形成的30μm宽度的分离槽宽度内,能够使固晶用树脂仅停留在器件芯片的背面,即在通过先划片而分割成各个器件芯片之后,能够在不需要使固晶用树脂与各个器件芯片对应而进行分割的工序的状态下敷设该树脂。
(移换工序)
在上述的树脂敷设工序结束之后实施移换工序。如上述的那样,在结束了该树脂敷设工序的半导体晶片W的分离槽22内没有侵入固晶用树脂,各个器件芯片是仅通过保护带23而连结的状态。这里,从上述树脂敷设装置的保持工作台40取下该半导体晶片W,如图6所示,将半导体器件W的背面、即形成有上述固晶用树脂层60的面粘接在外周部以覆盖环状的框架F的内侧开口部的方式安装的、伸缩性优越的粘结带T的正面上,并将为了保护正面侧而粘接的保护带23剥离,移换工序结束。
(分离工序)
当上述移换工序结束时,实施将背面上敷设有该树脂的该器件芯片从晶片分离的分离工序。该分离工序是在分离装置70中实施的,在图7中示出了该分离装置70的一部分,该分离装置70具有:框架保持部件71;夹具72,将环状框架F载置到框架保持部件71的上表面部而对上述环状的框架F进行保持;以及扩张滚筒73,其由至少上方开口的圆筒形状构成,用于对由该夹具72保持的环状的框架F上所安装的半导体晶片W进行扩张。框架保持部件71被支承构件723支承为能够升降,该支承构件723包含有以围绕扩张滚筒73的方式设置的多个气缸723a和从气缸723a延伸的活塞杆723b。
该扩张滚筒73被设定为比环状的框架F的内径小并比半导体晶片W的外径大,其中,该半导体晶片W粘接在粘合带T上,该粘合带T安装在环状的框架F上。这里,如图7所示,分离装置70能够取得框架保持部件71与扩张滚筒73的上表面部为大致相同高度的位置(如虚线所示)和通过支承构件723的作用而使扩张滚筒73的上端部比框架保持部件71的上端部高的位置(如实线所示)。
当使上述框架保持部件71下降而使扩张滚筒73的上端从虚线所示的位置相对变化为以实线所示的比框架保持部件71高的位置时,安装在环状的框架F上的粘合带T与扩张滚筒73的上端缘接触而被扩张。其结果是,由于张力呈放射状地作用于粘接在粘合带T上的半导体晶片W,所以预先沿着分离槽22被分割的各个器件芯片彼此的间隔被扩大。并且,在各个器件芯片彼此的间隔被扩大的状态下,使拾取夹头74动作而对已经分割得到的器件芯片进行吸附,从粘合带T剥离并拾取器件芯片,搬送至未图示的托盘、或将器件芯片粘结在引线框架上的芯片粘结工序。通过以上动作,分离工序结束,本发明的晶片的加工方法完成。
示出了在构成上述的保护部件配设工序的一部分的分离槽形成步骤中,为了形成分离槽而使设置在主轴的前端部的切削刀具13旋转而与半导体晶片的正面压接并进行加工从而形成分离槽的例子,但形成分离槽的方法并不限定于此,能够采用各种方法。例如,可以采用在专利文献3中所示的通过等离子将气体离子化/自由基化而进行蚀刻的反应性离子蚀刻等干蚀刻、或者采用使用了根据晶片的材料而选择的各种液体的湿蚀刻。并且,作为其他的方法,也可以通过激光加工来形成分离槽,在该激光加工中使用了对于晶片的正面具有吸收性的波长的激光光线。
如上述的那样,当对在树脂敷设工序中实施的固晶用树脂进行涂布时,对半导体晶片背面侧喷射液状的固晶用树脂,但作为此时的高压空气的压力、来自液状树脂容器的提供量或者混合单元中的混合比例,优选所喷雾的液状树脂的粒径细且每单位时间的喷雾量少。当粒径过大或者每单位时间的喷雾量过多时,所涂布的液状树脂从背面进入显出的分离槽22内而填满分离槽22,存在与上述的以往技术同样地需要另行分割的工序的担心。因此,作为每单位时间的液状树脂的提供量或受喷雾的粒径等影响的高压空气的压力的条件,只要考虑该分离槽的槽宽度、液状树脂的粘度等,而选择液状树脂不会进入该分离槽的程度的条件即可。
Claims (10)
1.一种晶片的加工方法,在该晶片中,在正面上由交叉的多条分割预定线划分而形成有多个器件,该晶片的加工方法的特征在于,具有如下的工序:
保护部件配设工序,在被分割成各个器件芯片的晶片的正面上配设对该正面进行保护的保护部件;
树脂敷设工序,将液状的固晶用树脂涂布在晶片的背面上并使其固化,从而将固晶用的树脂敷设在各个器件芯片的背面上;以及
分离工序,将背面上敷设有该树脂的该器件芯片从晶片分离。
2.根据权利要求1所述的晶片的加工方法,其中,
该保护部件配设工序包含如下的步骤:
分离槽形成步骤,在将该保护部件配设在晶片的正面上之前,沿着该分割预定线形成深度相当于该器件芯片的完工厚度的分离槽;
保护部件粘接步骤,将保护部件粘接在形成有该分离槽的该晶片的正面上;以及
分割步骤,对该晶片进行薄化而使该分离槽在该晶片的背面露出,将该晶片分割成各个器件芯片。
3.根据权利要求2所述的晶片的加工方法,其中,
在该分离槽形成步骤中,使切削刀具沿着分割预定线切入,形成具有相当于器件芯片的完工厚度的深度的分离槽。
4.根据权利要求2所述的晶片的加工方法,其中,
在该分离槽形成步骤中,通过湿蚀刻或干蚀刻而按照分割预定线形成深度相当于该器件芯片的完工厚度的分离槽。
5.根据权利要求2所述的晶片的加工方法,其中,
在该分离槽形成步骤中,沿着分割预定线照射激光光线,形成深度相当于该器件芯片的完工厚度的分离槽。
6.根据权利要求2所述的晶片的加工方法,其中,
在该分割步骤中,对晶片的背面进行磨削而将其薄化,使分离槽在晶片的背面露出。
7.根据权利要求1所述的晶片的加工方法,其中,
在实施了该树脂敷设工序之后,实施如下的移换工序:在敷设有该树脂的晶片的背面上粘接粘合带,并且利用具有对该晶片进行收纳的开口的框架隔着该粘合带对晶片进行支承,并从该晶片的正面将保护部件去除,
在实施了该移换工序之后,从该粘合带拾取器件芯片而实施该分离工序。
8.根据权利要求1所述的晶片的加工方法,其中,
该树脂敷设工序包含如下的步骤:
保持步骤,使该晶片的背面露出而将该晶片保持在能够旋转的工作台上;
涂布步骤,使该工作台旋转并使该液状树脂成为雾状而涂布在晶片的背面上;以及
敷设步骤,对涂布在该晶片的背面上的液状树脂施加外界刺激而使其固化,从而将该树脂敷设在晶片的背面上。
9.根据权利要求8所述的晶片的加工方法,其中,
该涂布步骤包含如下的操作:
使该液状树脂成为雾状而涂布在晶片的背面上从而在各个器件芯片的背面上形成第1薄膜层,之后,进一步与该第1薄膜层重叠地层积第2薄膜层而完成希望的厚度。
10.根据权利要求9所述的晶片的加工方法,其中,
该涂布步骤中的该第1薄膜层和该第2薄膜层的一次性形成的厚度为3~7μm。
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