TW201717267A - 晶圓的加工方法 - Google Patents
晶圓的加工方法 Download PDFInfo
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Abstract
本發明的課題是在於提供一種對於採用先切割的情況的半導體裝置的背面,不使生產性惡化,對於各個的裝置敷設黏晶(die bond)用樹脂之晶圓的加工方法。其解決手段為:複數的裝置藉由分割預定線來區劃而形成於表面之晶圓的加工方法,其特徵為具備:保護構件配設工程,其係於被分割成各個的裝置晶片之晶圓的表面配設保護該表面的保護構件;樹脂敷設工程,其係將液狀的黏晶用樹脂塗佈於晶圓的背面而使固化,藉此將黏晶用的樹脂敷設於各個的裝置晶片的背面;及分離工程,其係從晶圓分離在背面敷設有該樹脂的該裝置晶片。
Description
本發明是有關形成背面具備黏晶用樹脂的複數的裝置晶片之晶圓的加工方法。
在IC、LSI等所被使用的半導體裝置的製造製程中,複數的裝置被形成於藉由分割預定線所區劃的表面之晶圓會被分割成各個的裝置晶片,藉此形成半導體裝置晶片。然後,藉由封裝該半導體裝置晶片,利用在行動電話、個人電腦等的電氣機器。
被分割的半導體裝置晶片是接合(黏著)於導線架(金屬製基板)等,但作為對於該半導體裝置晶片的背面敷設用以黏著於導線架的接合材的方法有:在分割成各個的裝置晶片之前的晶圓的背面貼著與該晶圓大致同大小的DAF(晶片黏著薄膜(die attach film)),從晶圓的表面側藉由切割來將晶圓分割成各個的裝置晶片的同時,對應於各個的裝置晶片來切斷接合材,將分割後的各個的裝置晶片從該晶圓分離而取出,藉此取得在背面敷設有接合材的半導體裝置晶片為人所知(例如參照專利文獻
1)。
採用上述那樣的接合材的敷設方法時,是以使晶圓形成所望的厚度之方式,從背面側進行磨削(薄化),對於磨削後的背面貼著該DAF之後,從表面側切割,分割成各個的裝置晶片為前提。
但,採用從表面側使用切削刀進行設置相當於完成厚度的深度的分離溝之切割,然後磨削背面,藉此分割成各個的裝置晶片之所謂先切割的技術時,與背面磨削的完了同時,晶圓會被分割成各個的裝置晶片,因此難採用上述那樣的方法。於是,嘗試在採用先切割時的裝置晶片的背面敷設成為接合材例如黏晶用樹脂時,分割成各個的半導體裝置晶片之後,從晶圓取出各個的半導體裝置晶片之前,在晶圓的背面全體貼著黏晶用的樹脂薄膜,從晶圓的表面的分離溝側照射雷射光線等,使該薄膜對應於該半導體裝置晶片而分割(例如參照專利文獻2)。另外,沿著分割預定線來形成相當於裝置晶片的完成厚度的深度的分離溝之方法,是不限於上述切削刀,亦可藉由蝕刻等來形成(例如參照專利文獻3)。
[專利文獻1]日本特開2000-182995號公報
[專利文獻2]日本特開2002-118081號公報
[專利文獻3]日本特開2006-294913號公報
就採用上述的先切割時敷設黏晶用樹脂的方法而言,與半導體裝置的分割不同,另須被貼著於背面的黏晶用的樹脂薄膜的切斷,成為比較複雜的工程。再者,完成切割後被實行的背面磨削而被分割成各個的半導體裝置晶片之後的晶圓的分割預定線,其寬或位置相對於分割前的分割預定線,有可能因為從背面磨削時的磨削砥石施加的負荷而變化,有損直線性等,亦恐有難以沿著該分割預定線藉由物理性的加工手段來分割之虞等,會有生產性惡化的問題。
本發明是有鑑於上述事實而研發者,其主要的技術課題是在於提供一種對於採用先切割的情況的半導體裝置的背面,不使生產性惡化,對於各個的裝置敷設黏晶用樹脂之晶圓的加工方法。
為了解決上述主要的技術課題,若根據本發明,則可提供一種晶圓的加工方法,係複數的裝置藉由分割預定線來區劃而形成於表面之晶圓的加工方法,其特徵為具備:保護構件配設工程,其係於被分割成各個的裝置晶片之晶圓的表面配設保護該表面的保護構件;
樹脂敷設工程,其係將液狀的黏晶用樹脂塗佈於晶圓的背面而使固化,藉此將黏晶用的樹脂敷設於各個的裝置晶片的背面;及分離工程,其係從晶圓分離在背面敷設有該樹脂的該裝置晶片。
較理想是該保護構件配設工程包含:分離溝形成步驟,其係於配設該保護構件之前,沿著該分割預定線來形成相當於該裝置晶片的完成厚度之分離溝;保護構件貼著步驟,其係於形成有該分離溝的該晶圓的表面貼著保護構件;及分割步驟,其係將該晶圓薄化而使該分離溝露出於該晶圓的背面,將該晶圓分割成各個的裝置晶片。
在該分離溝形成步驟中,可藉由將切削刀沿著分割預定線切入,或溼蝕刻、乾蝕刻,或將雷射光線沿著分割預定線照射,而形成具備相當於裝置的完成厚度之深度的分離溝。
該分割步驟是磨削晶圓的背面而薄化,使分離溝露出於晶圓的背面為理想。
較理想是該樹脂敷設工程之後,在敷設有該樹脂的晶圓的背面貼著黏著帶,且在具有收容該晶圓的開口之框架經由該黏著帶來支撐晶圓,實施從該晶圓的表面除去保護構件的移轉工程,該移轉工程的實施後,從該黏著帶拾取裝置晶片而實施該分離工程。
較理想是該樹脂敷設工程包含:保持步驟,其係使該晶圓的背面露出而保持於可旋轉的平台;塗佈步驟,其係使該平台旋轉,將該液狀樹脂形成霧狀,塗佈於晶圓的背面;及敷設步驟,其係對被塗佈於該晶圓的背面之液狀樹脂賦予外在刺激而使固化,藉此將該樹脂敷設於晶圓的背面。
該塗佈步驟是包含:將該液狀樹脂形成霧狀而塗佈於晶圓的背面,在各個的裝置晶片的背面形成薄膜層,然後更重疊於該薄膜層來使薄膜層層疊,完成所望的厚度為理想,且被一次塗佈的該薄膜層是以3~7μm的厚度形成為理想。
若根據本發明的晶圓的加工方法,則可在液狀狀態下將黏晶用的樹脂塗佈於被分割的各個的裝置晶片的背面,對應於各個的裝置晶片敷設黏晶用的樹脂。因此,即使如以往技術般,藉由先切割來取得各個的裝置晶片時,也不需要另外照射雷射光線來對應於裝置晶片而分割DAF等的工程,不用複雜的工程,生產性會提升。
10‧‧‧軸單元
11‧‧‧軸殼
12‧‧‧旋轉軸
13‧‧‧切削刀
21‧‧‧裝置
22‧‧‧分離溝
23‧‧‧保護帶(保護構件)
30‧‧‧吸盤台
33‧‧‧磨削輪
50‧‧‧塗佈單元
51‧‧‧塗佈噴嘴
52‧‧‧混合單元
53‧‧‧搖動單元
54‧‧‧高壓空氣槽
55‧‧‧液體樹脂槽
60‧‧‧黏晶用樹脂層
70‧‧‧分離裝置
71‧‧‧框架保持構件
72‧‧‧夾鉗
73‧‧‧擴張筒
720‧‧‧支撐手段
圖1是表示用以實行分離溝形成步驟的切削裝置的一部分的立體圖及晶圓的A-A剖面圖。
圖2是表示安裝保護構件的工程的立體圖。
圖3是表示磨削磨削晶圓的背面來分割裝置的分割工程的立體圖。
圖4是表示在樹脂敷設工程中,塗佈液狀的黏晶用樹脂的工程的立體圖。
圖5是表示在樹脂敷設工程中,對液狀的黏晶用樹脂照射紫外線的工程的立體圖。
圖6是表示在移轉工程中,剝離保護構件的工程的立體圖。
圖7是表示從晶圓分離裝置晶片的分離工程的剖面圖。
以下,參照附圖詳細說明有關本發明的晶圓的加工方法的合適的實施形態。
在圖1中顯示實行分離溝形成步驟的狀態,該分離溝形成步驟是沿著半導體晶圓W的表面側所形成的分割預定線來形成相當於裝置晶片的完成厚度的分離溝。
如圖1(a)所示般,上述分離溝形成步驟是藉由具備軸(spindle)單元10的切削裝置(裝置全體的
圖示省略)來實行。該軸單元10是具備保持被固定於軸12的前端部的切削刀13之軸殼11。以預定的厚度(例如700μm)所形成的加工前的該半導體晶圓W的表面20a側是藉由分割預定線來區劃成複數的領域,在該被區劃的各領域中形成裝置21。使與軸12一起被高速旋轉的切削刀13對於背面側20b側被吸引保持於切削裝置的保持台(圖示省略)的半導體晶圓W下降切入,藉由使該保持台與切削刀13相對移動於加工進給方向,如作為圖1(a)的A-A剖面圖來表示的圖1(b)所示般,以相當於沿著分割預定線的裝置晶片的完成厚度(例如50μm)之深度,形成預定的溝寬(例如30μm)的分離溝22。另外,圖1(b)是基於說明的方便起見,強調分離溝22而記載者,並非是按照實際的尺寸者。
該切削裝置是構成對於沿著切削刀13的切削方向的加工進給方向、與半導體晶圓W並行且和該加工進給方向正交的分度進給方向、使切削刀13朝半導體晶圓W上下作動的切出方向,皆可按照預先被記憶的程式來控制,在半導體晶圓W上的分割預定線上的全部形成與上述同樣的分離溝22,一旦該分離溝形成步驟終了,則從切削裝置的保持台取出半導體晶圓W。另外,上述分離溝22是被設定成相當於裝置晶片的完成厚度之深度,但藉由後述的磨削裝置來磨削,被磨削加工成所望的完成厚度時,只要結果被分割成各個的裝置晶片即可,可設定成比完成厚度深若干。
如圖2(a)所示般,該分離溝形成步驟終了,對於被取出的半導體晶圓W的表面20a側,貼著用以保護裝置21的保護構件之保護帶23(保護構件貼著步驟,參照圖2(b)),移至將該半導體晶圓W分割成各個的裝置晶片之分割步驟。
根據圖3來說明有關分割步驟。如圖3(a)所示般,貼著有保護帶23的半導體晶圓W是在磨削裝置所具備的吸盤台30上將該保護帶23側定位於下面而固定。吸盤台30是藉由未圖示的馬達來構成可旋轉,其上面部是藉由具有微細的通氣孔之多孔性陶瓷所形成,被連通至未圖示的吸引手段。如此構成的吸盤台30是藉由作動未圖示的吸引手段,吸引保持被載置於該吸盤台30的上面的保持面之半導體晶圓W。
在磨削裝置的吸盤台30的上方是具備藉由未圖示的伺服馬達來驅動的軸31,在被設定成對於吸盤台30的中心為偏心的位置之軸31的下端安裝有置件機(mounter)32。在置件機32上,用以磨削被吸引保持於吸盤台30上的半導體晶圓W之磨削輪33會藉由螺栓來牢固地固定。該磨削裝置是具備用以將藉由上述軸31、置件機32、磨削輪33及未圖示的伺服馬達所構成的磨削單元移動於上下方向的磨削進給方向之磨削進給手段。
藉由上述磨削進給手段,使磨削輪33對於被吸引保持於吸盤台30上的半導體晶圓W壓接。此時,吸盤台30是以約300rpm,磨削輪33是以約6000rpm的旋
轉速度來旋轉驅動於箭號方向,朝下方以1μm/秒的速度來磨削進給。若一邊以未圖示的接觸式或非接觸式的厚度測定量規(gauge)來測定半導體晶圓W的厚度,一邊將半導體晶圓W磨削至所望的完成厚度(50μm),則如圖3(b)所示般,在上述的分離溝形成步驟所形成的分離溝22會露出於背面側,結果,半導體晶圓W會被分割成各個的裝置晶片。若如此分割成各個的裝置晶片,則會成為在被分割成各個的裝置晶片之晶圓的表面配設有保護該表面的保護構件之狀態,完成本發明的保護構件配設工程。
根據圖4、5來說明有關本發明的樹脂敷設工程。上述的保護構件配設工程終了後,如圖4所示般,半導體晶圓W會從吸盤台30取出,以在上述分割步驟被磨削的該半導體晶圓W的背面側作為上面,實行使表面側保持於樹脂敷設裝置(裝置全體的圖示省略)的保持台40之保持步驟。該保持台40以具有與上述吸盤台30同樣的構成,藉由未圖示的吸引手段來吸引保持,且藉由未圖示的伺服馬達來構成可旋轉。
藉由上述保持步驟來將半導體晶圓W保持於保持台40之後,藉由設置在樹脂敷設裝置的保持台40附近之塗佈單元50來實行塗佈步驟。該塗佈單元50是藉由:塗佈噴嘴51,混合單元52,搖動單元53,高壓空氣槽54及液狀樹脂槽55所夠構成,該塗佈噴嘴51是以其
前端部51a能夠位於保持台40上所被保持的半導體晶圓W的上方之方式延伸,該混合單元52是將後述的液狀的黏晶用樹脂(液狀樹脂)與高壓空氣混合而供給至塗佈噴嘴51側,該搖動單元53是具備使該塗佈單元50的塗佈噴嘴51沿著半導體晶圓W的上面平行搖動(參照圖中箭號)之未圖示的空氣馬達,該高壓空氣槽54是對混合單元52供給高壓空氣,該液狀樹脂槽55是對混合單元52供給黏晶用的液狀樹脂。
該高壓空氣槽54是具備未圖示的空氣泵及真空解除閥,作動中是該槽內經常被控制成一定的壓力(例如0.3MPa),因應所需構成可朝混合單元52供給高壓空氣。並且,在液狀樹脂槽55中,充填有固定維持液狀狀態,藉由賦予外在刺激而固化,作為接合劑機能的黏晶用的樹脂,構成可藉由內藏的泵來以一定壓力朝混合單元52供給。另外,該黏晶用的液狀樹脂是採用藉由照射紫外線作為外在刺激來固化的紫外線硬化型黏著劑。該紫外線硬化型黏著劑,例如可採用Honghow Specialty Chemicals Inc.製的商品名「HP20VL」或「ST20VL」。另外,其他亦可使用藉由施加預定的熱作為外在刺激來固化的銀充填環氧樹脂黏著劑,例如Ablestik Laboratories製的商品名「Ablebond 8200c」等。
在混合單元52內設有上述高壓空氣通過之未圖示的狹窄部,上述液狀樹脂可藉由細管來從對於該狹窄部正交的方向供給。從塗佈噴嘴51的前端部51a噴霧該
液狀樹脂時,是從高壓空氣槽54供給高壓空氣,從該液狀樹脂槽55供給液狀樹脂,高壓空氣通過混合單元52內的該狹窄部時,藉由文丘里效應(venturi effect)來從細管吸出液狀樹脂的同時被微粒化,構成可從塗佈噴嘴51的前端部51a往半導體晶圓W的背面霧狀地噴射。另外,該混合單元52的構造並非限於此。可原封不動適用一般周知作為塗裝用具使用的空氣刷子等的構成。
更說明有關從上述塗佈噴嘴51朝半導體晶圓W的背面噴霧該液狀樹脂的塗佈步驟。一旦藉由上述的保持步驟來保持半導體晶圓W於保持台40上,則上述塗佈單元50會被設定成待機狀態。此時,塗佈噴嘴51的前端部51a是被設定於不位在半導體晶圓W上方的附近。這是為了噴霧開始時大粒徑的液狀樹脂不會滴下至半導體晶圓W上。從該塗佈噴嘴51使液狀樹脂噴霧時,首先保持台40會例如以500rpm的速度開始旋轉。其次從高壓空氣槽54開始高壓空氣的供給,之後從液狀樹脂槽55開始液狀樹脂的供給。然後,塗佈噴嘴51的前端部51a不在半導體晶圓W上方的狀態下,來自前端部51a的噴霧開始後,搖動單元53的驅動開始。亦即,一邊半導體晶圓W以上述速度旋轉,一邊使藉由該搖動單元53而被驅動的塗佈噴嘴51的前端部51a往復移動於其上。然後,藉由搖動單元53,一旦塗佈噴嘴51往復移動了設定次數(例如5往復),則塗佈噴嘴51的前端部51a回到不在半導體晶圓W上的待機狀態,液狀樹脂的供給、高壓空氣的
供給會被停止,保持台40的旋轉也停止。並且,不一次大量噴霧,如上述般,將一次的塗佈處理限定於5往復,而使藉由液狀樹脂形成的薄膜層形成3~7μm。
進行上述的第一次的塗佈處理之後,間隔被噴霧於半導體晶圓W的各個的裝置晶片上的液狀的黏晶用的樹脂安定的時間(例如30秒程度),再度實行塗佈與上述同樣的液狀樹脂的處理,更形成液狀樹脂的薄膜層。形成該薄膜層的塗佈處理的次數是只要實行藉由後述的敷設步驟而被固化的結果,該黏晶用樹脂的最終的厚度成為10~50μm那樣的次數即可。藉由實行預定的塗佈處理的次數,完成該塗佈步驟。在如此本實施形態的塗佈步驟中,從塗佈噴嘴51的前端部51a噴霧高壓的液狀樹脂,而在各個的裝置晶片上形成薄膜層。此時,在分離溝22中也被噴霧高壓的液狀樹脂,而在被貼著於分離溝22的底部之保護帶23上堆積液狀樹脂。但,由於此堆積的液狀樹脂非常薄,因此即使重複複數次塗佈步驟,分離溝22也未以液狀樹脂完全填埋,在各個被分割的裝置晶片的背面上堆積的液狀樹脂是在每個裝置晶片獨立堆積。
該塗佈步驟完了後,如圖5所示般,對於塗佈有液狀的該黏晶用樹脂之面,藉由作為附加外在刺激的手段之紫外線照射手段100來照射紫外線而固化,藉此可在被分割成各個的裝置晶片之半導體晶圓W的背面敷設該黏晶用樹脂層60(敷設步驟)。以上,藉由實施保持步驟~敷設步驟,完成樹脂敷設工程。另外,採用熱硬化
型樹脂作為液狀的黏晶用樹脂時,取代上述紫外線的照射,實行加熱器等的加熱而將該液狀樹脂固化,在各個的裝置晶片的背面敷設該黏晶用樹脂層60。
如上述般,藉由採用在半導體晶圓W的背面上液狀塗佈黏晶用的樹脂而固化之構成,不會有使黏晶用樹脂流入各個的裝置晶片間存在之分離溝形成工程所形成的30μm寬的分離溝寬內的情形,只留在裝置晶片的背面,亦即可在不需要藉由先切割來分割成各個的裝置晶片之後使黏晶用樹脂對應於各個的裝置晶片而分割之工程的狀態下敷設該樹脂。
上述的樹脂敷設工程終了後,實施移轉工程。如上述般,該樹脂敷設工程終了的半導體晶圓W是黏晶用樹脂不會侵入分離溝22,各個的裝置晶片是只藉由保護帶23來連結的狀態。在此,從上述樹脂敷設裝置的保持台40卸下該半導體晶圓W,如圖6所示般,在以能夠覆蓋環狀的框架F的內側開口部的方式安裝外周部之伸縮性佳的黏著帶T的表面貼著半導體裝置W的背面亦即形成有上述黏晶用樹脂層60的面,將應保護表面側而被貼著的保護帶23剝離,完成移轉工程。
一旦上述移轉工程終了,則實施從晶圓分離背面被敷
設該樹脂的該裝置晶片之分離工程。該分離工程是以在圖7顯示其一部分的分離裝置70來實施者,該分離裝置70是具備:框架保持構件71,及在其上面部載置環狀框架F而保持上述環狀的框架F之夾鉗72,以及用以擴張半導體晶圓W之至少上方為開口的圓筒形狀所成的擴張筒73,該半導體晶圓W是被安裝於藉由該夾鉗72而保持的環狀的框架F。框架保持構件71是藉由支撐手段723來可昇降地支撐,該支撐手段723是由:被設置成包圍擴張筒73的複數的氣壓缸723a,及從氣壓缸723a延伸的活塞桿723b所構成。
該擴張筒73是被設定成比環狀的框架F的內徑更小,比被安裝於環狀的框架F的黏著帶T所貼著的半導體晶圓W的外徑更大。在此,如圖7所示般,分離裝置70是可設為框架保持構件71與擴張筒73的上面部大致形成同一高度的位置(以實線表示),及藉由支撐手段723的作用使框架保持構件71下降,擴張筒73的上端部比框架保持構件71的上端部更高的位置(以點線表示)。
若以使上述框架保持構件71下降,而將擴張筒73的上端從以點線所示的位置成為比以實線所示的框架保持構件71更高的位置之方式使相對地變化,則被安裝於環狀的框架F的黏著帶T是接觸於擴張筒73的上端緣而被擴張。此結果,拉伸力會放射狀地作用於黏著帶T所貼著的半導體晶圓W,因此預先沿著分離溝22而被分
割的各個的裝置晶片彼此間的間隔會被擴大。然後,在各個的裝置晶片彼此間的間隔被擴大的狀態下,使拾取夾頭74作動來吸附已被分割的裝置晶片,從黏著帶T剝離而拾取,搬送至未圖示的托盤或在導線架黏著裝置晶片的黏晶工程。藉由以上,分離工程終了,完成本發明的晶圓的加工方法。
在構成上述保護構件配設工程的一部分之分離溝形成步驟中,為了形成分離溝,而使設在軸的前端部之切削刀13旋轉,壓接於半導體晶圓的表面而加工形成,但形成分離溝的方法並非限於此,可取各種的方法。例如,可採用如專利文獻3所示般,藉由電漿來使氣體離子化.自由基化而蝕刻的反應性離子蝕刻等的乾蝕刻,或利用按照晶圓的材料來選擇的各種的液體之溼蝕刻。又,其他的方法,亦可藉由使用對於晶圓的表面具有吸收性的波長的雷射光線之雷射加工來形成。
如上述般,在樹脂敷設工程所被實施之塗佈黏晶用樹脂時,將液狀的黏晶用樹脂噴射至半導體晶圓背面側,但此時的高壓空氣的壓力、來自液狀樹脂槽的供給量、或混合單元的混合比例,是噴霧後的液狀樹脂的粒徑細,每時間的噴霧量少較為理想。若粒徑過大,每時間的噴霧量過多,則被塗佈的液狀樹脂會進入從背面露出的分離溝22內而填埋分離溝22,恐有和上述以往技術同樣需要另外分割的工程之虞。因此,每時間的液狀樹脂的供給量或影響噴霧的粒徑等的高壓空氣的壓力條件是只要考慮
該分離溝的溝寬、液狀樹脂的黏度等,來選擇液狀樹脂不會進入該分離溝的程度的條件即可。
23‧‧‧保護帶(保護構件)
40‧‧‧保持台
50‧‧‧塗佈單元
51‧‧‧塗佈噴嘴
51a‧‧‧前端部
52‧‧‧混合單元
53‧‧‧搖動單元
54‧‧‧高壓空氣槽
55‧‧‧液體樹脂槽
Claims (10)
- 一種晶圓的加工方法,係複數的裝置藉由交叉的複數的分割預定線來區劃而形成於表面之晶圓的加工方法,其特徵為具備:保護構件配設工程,其係於被分割成各個的裝置晶片之晶圓的表面配設保護該表面的保護構件;樹脂敷設工程,其係將液狀的黏晶用樹脂塗佈於晶圓的背面而使固化,藉此將黏晶用的樹脂敷設於各個的裝置晶片的背面;及分離工程,其係從晶圓分離在背面敷設有該樹脂的該裝置晶片。
- 如申請專利範圍第1項之晶圓的加工方法,其中,該保護構件配設工程係包含:分離溝形成步驟,其係將該保護構件配設於晶圓的表面之前,沿著該分割預定線來形成相當於該裝置晶片的完成厚度之分離溝;保護構件貼著步驟,其係於形成有該分離溝的該晶圓的表面貼著保護構件;及分割步驟,其係將該晶圓薄化而使該分離溝露出於該晶圓的背面,將該晶圓分割成各個的裝置晶片。
- 如申請專利範圍第2項之晶圓的加工方法,其中,該分離溝形成步驟係將切削刀沿著分割預定線來切入,形成具備相當於裝置晶片的完成厚度之深度的分離溝。
- 如申請專利範圍第2項之晶圓的加工方法,其中, 該分離溝形成步驟係藉由溼蝕刻或乾蝕刻來對分割預定線形成相當於該裝置晶片的完成厚度之深度的分離溝。
- 如申請專利範圍第2項之晶圓的加工方法,其中,該分離溝形成步驟係沿著分割預定線來照射雷射光線,形成相當於該裝置晶片的完成厚度之深度的分離溝。
- 如申請專利範圍第2項之晶圓的加工方法,其中,該分割步驟係磨削晶圓的背面而薄化,使分離溝露出於晶圓的背面。
- 如申請專利範圍第1項之晶圓的加工方法,其中,實施該樹脂敷設工程之後,在敷設有該樹脂的晶圓的背面貼著黏著帶,且在具有收容該晶圓的開口的框架經由該黏著帶來支撐晶圓,實施從該晶圓的表面除去保護構件的移轉工程,該移轉工程的實施後,從該黏著帶拾取裝置晶片而實施該分離工程。
- 如申請專利範圍第1項之晶圓的加工方法,其中,該樹脂敷設工程係包含:保持步驟,其係使該晶圓的背面露出而保持於可旋轉的平台;塗佈步驟,其係使該平台旋轉,將該液狀樹脂形成霧狀而塗佈於晶圓的背面;及敷設步驟,其係對被塗佈於該晶圓的背面之液狀樹脂賦予外在刺激而使固化,藉此將該樹脂敷設於晶圓的背面。
- 如申請專利範圍第8項之晶圓的加工方法,其中,該塗佈步驟包含:將該液狀樹脂形成霧狀而塗佈於晶圓的背面,在各個的裝置晶片的背面形成第1薄膜層,然後更重疊於該第1薄膜層來使第2薄膜層層疊,完成所望的厚度。
- 如申請專利範圍第9項之晶圓的加工方法,其中,該塗佈步驟的該第1及第2薄膜層的一次形成的厚度為3~7μm。
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