CN102190975B - 芯片接合薄膜、切割/芯片接合薄膜及半导体装置 - Google Patents
芯片接合薄膜、切割/芯片接合薄膜及半导体装置 Download PDFInfo
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- CN102190975B CN102190975B CN201110051582.2A CN201110051582A CN102190975B CN 102190975 B CN102190975 B CN 102190975B CN 201110051582 A CN201110051582 A CN 201110051582A CN 102190975 B CN102190975 B CN 102190975B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 219
- 239000012790 adhesive layer Substances 0.000 claims abstract description 349
- 238000005520 cutting process Methods 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 53
- 229920000647 polyepoxide Polymers 0.000 claims description 53
- 239000003822 epoxy resin Substances 0.000 claims description 52
- 239000000975 dye Substances 0.000 claims description 51
- 239000011230 binding agent Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 39
- 238000009998 heat setting Methods 0.000 claims description 33
- 229920003987 resole Polymers 0.000 claims description 31
- 239000004925 Acrylic resin Substances 0.000 claims description 20
- 229920000178 Acrylic resin Polymers 0.000 claims description 20
- 238000010008 shearing Methods 0.000 claims description 17
- 238000004026 adhesive bonding Methods 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 13
- 239000000049 pigment Substances 0.000 claims description 12
- 238000002788 crimping Methods 0.000 claims description 11
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 26
- 238000011068 loading method Methods 0.000 abstract description 2
- -1 bisphenol A-type Chemical compound 0.000 description 73
- 230000001070 adhesive effect Effects 0.000 description 62
- 238000000034 method Methods 0.000 description 62
- 239000000853 adhesive Substances 0.000 description 61
- 239000000178 monomer Substances 0.000 description 53
- 150000001875 compounds Chemical class 0.000 description 48
- 238000012545 processing Methods 0.000 description 45
- 239000000126 substance Substances 0.000 description 41
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 39
- 235000012431 wafers Nutrition 0.000 description 36
- 239000003795 chemical substances by application Substances 0.000 description 35
- 229920000058 polyacrylate Polymers 0.000 description 35
- 230000008569 process Effects 0.000 description 30
- 238000001723 curing Methods 0.000 description 27
- 239000000203 mixture Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- 239000000945 filler Substances 0.000 description 21
- 229920005989 resin Polymers 0.000 description 18
- 239000011347 resin Substances 0.000 description 18
- 229920001296 polysiloxane Polymers 0.000 description 16
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 229920006243 acrylic copolymer Polymers 0.000 description 12
- 229920005601 base polymer Polymers 0.000 description 11
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 239000003054 catalyst Substances 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 238000001029 thermal curing Methods 0.000 description 11
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 150000002148 esters Chemical class 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- 125000000524 functional group Chemical group 0.000 description 9
- 230000005855 radiation Effects 0.000 description 9
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical class C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 125000005250 alkyl acrylate group Chemical group 0.000 description 8
- 239000000470 constituent Substances 0.000 description 8
- 238000005192 partition Methods 0.000 description 8
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 125000003700 epoxy group Chemical group 0.000 description 7
- 238000006116 polymerization reaction Methods 0.000 description 7
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 6
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- XPNLOZNCOBKRNJ-UHFFFAOYSA-N ethyl prop-2-enoate;methyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C=C.COC(=O)C(C)=C XPNLOZNCOBKRNJ-UHFFFAOYSA-N 0.000 description 6
- 238000009472 formulation Methods 0.000 description 6
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000007334 copolymerization reaction Methods 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229920003986 novolac Polymers 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- MYONAGGJKCJOBT-UHFFFAOYSA-N benzimidazol-2-one Chemical compound C1=CC=CC2=NC(=O)N=C21 MYONAGGJKCJOBT-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 239000003063 flame retardant Substances 0.000 description 4
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 4
- LVHBHZANLOWSRM-UHFFFAOYSA-N itaconic acid Chemical compound OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000012764 mineral filler Substances 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000002966 varnish Substances 0.000 description 4
- QCBSYPYHCJMQGB-UHFFFAOYSA-N 2-ethyl-1,3,5-triazine Chemical compound CCC1=NC=NC=N1 QCBSYPYHCJMQGB-UHFFFAOYSA-N 0.000 description 3
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 230000003712 anti-aging effect Effects 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000005040 ion trap Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229940059574 pentaerithrityl Drugs 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001228 polyisocyanate Polymers 0.000 description 3
- 239000005056 polyisocyanate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical compound CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical group CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Natural products CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241001050985 Disco Species 0.000 description 2
- 239000004593 Epoxy Chemical class 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004902 Softening Agent Substances 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- NSLVHPAIBHJFOH-UHFFFAOYSA-N [S].CC=CC(=O)O Chemical compound [S].CC=CC(=O)O NSLVHPAIBHJFOH-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000003078 antioxidant effect Effects 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- 238000012662 bulk polymerization Methods 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 235000019241 carbon black Nutrition 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 150000003997 cyclic ketones Chemical class 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- 229920001903 high density polyethylene Polymers 0.000 description 2
- 239000004700 high-density polyethylene Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 2
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000012766 organic filler Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 2
- 239000005060 rubber Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000010557 suspension polymerization reaction Methods 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 239000001018 xanthene dye Substances 0.000 description 2
- SBGKCOJQKBHFTO-UHFFFAOYSA-N (2-nonylphenyl)phosphane Chemical compound CCCCCCCCCC1=CC=CC=C1P SBGKCOJQKBHFTO-UHFFFAOYSA-N 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- HUCQPHINKBNKRU-UHFFFAOYSA-N (4-methylphenyl)phosphane Chemical compound CC1=CC=C(P)C=C1 HUCQPHINKBNKRU-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- HMXQIFUGFZEJEO-UHFFFAOYSA-N 1,2-dihydropyrrol-3-one Chemical compound O=C1CNC=C1 HMXQIFUGFZEJEO-UHFFFAOYSA-N 0.000 description 1
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- ALQLPWJFHRMHIU-UHFFFAOYSA-N 1,4-diisocyanatobenzene Chemical compound O=C=NC1=CC=C(N=C=O)C=C1 ALQLPWJFHRMHIU-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- DLUPHJKQEIIYAM-UHFFFAOYSA-N 1-(2-ethoxyphenyl)-2-hydroxy-2-phenylethanone Chemical compound CCOC1=CC=CC=C1C(=O)C(O)C1=CC=CC=C1 DLUPHJKQEIIYAM-UHFFFAOYSA-N 0.000 description 1
- PWMWNFMRSKOCEY-UHFFFAOYSA-N 1-Phenyl-1,2-ethanediol Chemical compound OCC(O)C1=CC=CC=C1 PWMWNFMRSKOCEY-UHFFFAOYSA-N 0.000 description 1
- URJFKQPLLWGDEI-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=[C]N1CC1=CC=CC=C1 URJFKQPLLWGDEI-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- LMAUULKNZLEMGN-UHFFFAOYSA-N 1-ethyl-3,5-dimethylbenzene Chemical compound CCC1=CC(C)=CC(C)=C1 LMAUULKNZLEMGN-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- ZBOLWTQGSURPGN-UHFFFAOYSA-N 1-methyl-2-phenylimidazole-4,5-diol Chemical compound CN1C(O)=C(O)N=C1C1=CC=CC=C1 ZBOLWTQGSURPGN-UHFFFAOYSA-N 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- XGDRLCRGKUCBQL-UHFFFAOYSA-N 1h-imidazole-4,5-dicarbonitrile Chemical compound N#CC=1N=CNC=1C#N XGDRLCRGKUCBQL-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- QNIRRHUUOQAEPB-UHFFFAOYSA-N 2-(prop-2-enoylamino)butane-2-sulfonic acid Chemical compound CCC(C)(S(O)(=O)=O)NC(=O)C=C QNIRRHUUOQAEPB-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- LRRQSCPPOIUNGX-UHFFFAOYSA-N 2-hydroxy-1,2-bis(4-methoxyphenyl)ethanone Chemical compound C1=CC(OC)=CC=C1C(O)C(=O)C1=CC=C(OC)C=C1 LRRQSCPPOIUNGX-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- AUZRCMMVHXRSGT-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CC(C)CS(O)(=O)=O AUZRCMMVHXRSGT-UHFFFAOYSA-N 0.000 description 1
- BFOCLBAICAUQTA-UHFFFAOYSA-N 2-methylpropane;prop-2-enamide Chemical compound CC(C)C.NC(=O)C=C BFOCLBAICAUQTA-UHFFFAOYSA-N 0.000 description 1
- RUMACXVDVNRZJZ-UHFFFAOYSA-N 2-methylpropyl 2-methylprop-2-enoate Chemical compound CC(C)COC(=O)C(C)=C RUMACXVDVNRZJZ-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- ZVYGIPWYVVJFRW-UHFFFAOYSA-N 3-methylbutyl prop-2-enoate Chemical compound CC(C)CCOC(=O)C=C ZVYGIPWYVVJFRW-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 1
- PQJUJGAVDBINPI-UHFFFAOYSA-N 9H-thioxanthene Chemical compound C1=CC=C2CC3=CC=CC=C3SC2=C1 PQJUJGAVDBINPI-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 239000005995 Aluminium silicate Substances 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- KYNSBQPICQTCGU-UHFFFAOYSA-N Benzopyrane Chemical compound C1=CC=C2C=CCOC2=C1 KYNSBQPICQTCGU-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- WDOBSYDOLMPPEN-UHFFFAOYSA-N C(#N)C(C)C(=O)C=O Chemical compound C(#N)C(C)C(=O)C=O WDOBSYDOLMPPEN-UHFFFAOYSA-N 0.000 description 1
- GNBCKKSGQPLTRW-UHFFFAOYSA-N C(C=C)(=O)OC.C(N)(O)=O Chemical compound C(C=C)(=O)OC.C(N)(O)=O GNBCKKSGQPLTRW-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- QDZXJOMXPRWGFG-UHFFFAOYSA-N CCC1=NC=NC=N1.O=C1NC(=O)NC(=O)N1 Chemical compound CCC1=NC=NC=N1.O=C1NC(=O)NC(=O)N1 QDZXJOMXPRWGFG-UHFFFAOYSA-N 0.000 description 1
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 244000247747 Coptis groenlandica Species 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 239000000999 acridine dye Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000012211 aluminium silicate Nutrition 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- UPNZHELAZYDCNK-UHFFFAOYSA-N anthracene pyrimidine Chemical compound N1=CN=CC=C1.C1=CC=CC2=CC3=CC=CC=C3C=C12 UPNZHELAZYDCNK-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 239000001000 anthraquinone dye Substances 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- UHHXUPJJDHEMGX-UHFFFAOYSA-K azanium;manganese(3+);phosphonato phosphate Chemical compound [NH4+].[Mn+3].[O-]P([O-])(=O)OP([O-])([O-])=O UHHXUPJJDHEMGX-UHFFFAOYSA-K 0.000 description 1
- WXLFIFHRGFOVCD-UHFFFAOYSA-L azophloxine Chemical compound [Na+].[Na+].OC1=C2C(NC(=O)C)=CC(S([O-])(=O)=O)=CC2=CC(S([O-])(=O)=O)=C1N=NC1=CC=CC=C1 WXLFIFHRGFOVCD-UHFFFAOYSA-L 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- CNYNTSWTKGOUIL-UHFFFAOYSA-N benzhydryl(phenyl)phosphane Chemical class C=1C=CC=CC=1PC(C=1C=CC=CC=1)C1=CC=CC=C1 CNYNTSWTKGOUIL-UHFFFAOYSA-N 0.000 description 1
- XJHABGPPCLHLLV-UHFFFAOYSA-N benzo[de]isoquinoline-1,3-dione Chemical compound C1=CC(C(=O)NC2=O)=C3C2=CC=CC3=C1 XJHABGPPCLHLLV-UHFFFAOYSA-N 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- USFRYJRPHFMVBZ-UHFFFAOYSA-M benzyl(triphenyl)phosphanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)CC1=CC=CC=C1 USFRYJRPHFMVBZ-UHFFFAOYSA-M 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229940049676 bismuth hydroxide Drugs 0.000 description 1
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 238000012661 block copolymerization Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- OOPSAZSKOMIGFX-UHFFFAOYSA-N boric acid;toluene Chemical class OB(O)O.CC1=CC=CC=C1 OOPSAZSKOMIGFX-UHFFFAOYSA-N 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- NNBFNNNWANBMTI-UHFFFAOYSA-M brilliant green Chemical compound OS([O-])(=O)=O.C1=CC(N(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C1C=CC(=[N+](CC)CC)C=C1 NNBFNNNWANBMTI-UHFFFAOYSA-M 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- HBHZKFOUIUMKHV-UHFFFAOYSA-N chembl1982121 Chemical compound OC1=CC=C2C=CC=CC2=C1N=NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O HBHZKFOUIUMKHV-UHFFFAOYSA-N 0.000 description 1
- ZLFVRXUOSPRRKQ-UHFFFAOYSA-N chembl2138372 Chemical compound [O-][N+](=O)C1=CC(C)=CC=C1N=NC1=C(O)C=CC2=CC=CC=C12 ZLFVRXUOSPRRKQ-UHFFFAOYSA-N 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- UOALEFQKAOQICC-UHFFFAOYSA-N chloroborane Chemical class ClB UOALEFQKAOQICC-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- VYVRIXWNTVOIRD-LRHBOZQDSA-N ciguatoxin CTX1B Chemical compound C([C@@]12[C@@H](C)[C@@H]([C@@H]3[C@H]([C@H]([C@H](C)[C@H]4O[C@H]5C[C@@H](C)C[C@H]6O[C@@]7(C)[C@H](O)C[C@H]8O[C@H]9C=C[C@H]%10O[C@H]%11C[C@@H]%12[C@H]([C@@H]([C@H]%13O[C@H](C=CC[C@@H]%13O%12)\C=C\[C@H](O)CO)O)O[C@@H]%11C=C[C@@H]%10O[C@@H]9C\C=C/C[C@@H]8O[C@@H]7C[C@@H]6O[C@@H]5C[C@@H]4O3)O)O2)C)[C@H](O)CO1 VYVRIXWNTVOIRD-LRHBOZQDSA-N 0.000 description 1
- 229910000152 cobalt phosphate Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- KBLWLMPSVYBVDK-UHFFFAOYSA-N cyclohexyl prop-2-enoate Chemical compound C=CC(=O)OC1CCCCC1 KBLWLMPSVYBVDK-UHFFFAOYSA-N 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- FWLDHHJLVGRRHD-UHFFFAOYSA-N decyl prop-2-enoate Chemical compound CCCCCCCCCCOC(=O)C=C FWLDHHJLVGRRHD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- 150000001993 dienes Chemical class 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- CZZYITDELCSZES-UHFFFAOYSA-N diphenylmethane Chemical compound C=1C=CC=CC=1CC1=CC=CC=C1 CZZYITDELCSZES-UHFFFAOYSA-N 0.000 description 1
- 238000009820 dry lamination Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HGVPOWOAHALJHA-UHFFFAOYSA-N ethene;methyl prop-2-enoate Chemical compound C=C.COC(=O)C=C HGVPOWOAHALJHA-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- FPVGTPBMTFTMRT-NSKUCRDLSA-L fast yellow Chemical compound [Na+].[Na+].C1=C(S([O-])(=O)=O)C(N)=CC=C1\N=N\C1=CC=C(S([O-])(=O)=O)C=C1 FPVGTPBMTFTMRT-NSKUCRDLSA-L 0.000 description 1
- 235000019233 fast yellow AB Nutrition 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 230000002650 habitual effect Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SCFQUKBBGYTJNC-UHFFFAOYSA-N heptyl prop-2-enoate Chemical compound CCCCCCCOC(=O)C=C SCFQUKBBGYTJNC-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000001013 indophenol dye Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- VRWKTAYJTKRVCU-UHFFFAOYSA-N iron(6+);hexacyanide Chemical compound [Fe+6].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] VRWKTAYJTKRVCU-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229960001708 magnesium carbonate Drugs 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000391 magnesium silicate Substances 0.000 description 1
- 229910052919 magnesium silicate Inorganic materials 0.000 description 1
- 235000019792 magnesium silicate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- LVWZTYCIRDMTEY-UHFFFAOYSA-N metamizole Chemical compound O=C1C(N(CS(O)(=O)=O)C)=C(C)N(C)N1C1=CC=CC=C1 LVWZTYCIRDMTEY-UHFFFAOYSA-N 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LFJIAQOELDZMAR-UHFFFAOYSA-N n-methylprop-2-enamide;propane-1-sulfonic acid Chemical compound CNC(=O)C=C.CCCS(O)(=O)=O LFJIAQOELDZMAR-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- PYUYQYBDJFMFTH-WMMMYUQOSA-N naphthol red Chemical compound CCOC1=CC=CC=C1NC(=O)C(C1=O)=CC2=CC=CC=C2\C1=N\NC1=CC=C(C(N)=O)C=C1 PYUYQYBDJFMFTH-WMMMYUQOSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001005 nitro dye Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001006 nitroso dye Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-methyl phenol Natural products CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 1
- 229940065472 octyl acrylate Drugs 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- CBFCDTFDPHXCNY-UHFFFAOYSA-N octyldodecane Natural products CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- ULDDEWDFUNBUCM-UHFFFAOYSA-N pentyl prop-2-enoate Chemical compound CCCCCOC(=O)C=C ULDDEWDFUNBUCM-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical compound C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- WRAQQYDMVSCOTE-UHFFFAOYSA-N phenyl prop-2-enoate Chemical compound C=CC(=O)OC1=CC=CC=C1 WRAQQYDMVSCOTE-UHFFFAOYSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229920003055 poly(ester-imide) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- NHARPDSAXCBDDR-UHFFFAOYSA-N propyl 2-methylprop-2-enoate Chemical compound CCCOC(=O)C(C)=C NHARPDSAXCBDDR-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- IZMJMCDDWKSTTK-UHFFFAOYSA-N quinoline yellow Chemical compound C1=CC=CC2=NC(C3C(C4=CC=CC=C4C3=O)=O)=CC=C21 IZMJMCDDWKSTTK-UHFFFAOYSA-N 0.000 description 1
- 238000003847 radiation curing Methods 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 235000012739 red 2G Nutrition 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007776 silk screen coating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 150000003440 styrenes Chemical class 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- SJMYWORNLPSJQO-UHFFFAOYSA-N tert-butyl 2-methylprop-2-enoate Chemical group CC(=C)C(=O)OC(C)(C)C SJMYWORNLPSJQO-UHFFFAOYSA-N 0.000 description 1
- ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 239000001016 thiazine dye Substances 0.000 description 1
- 239000001017 thiazole dye Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- JOUDBUYBGJYFFP-FOCLMDBBSA-N thioindigo Chemical compound S\1C2=CC=CC=C2C(=O)C/1=C1/C(=O)C2=CC=CC=C2S1 JOUDBUYBGJYFFP-FOCLMDBBSA-N 0.000 description 1
- ANRHNWWPFJCPAZ-UHFFFAOYSA-M thionine Chemical compound [Cl-].C1=CC(N)=CC2=[S+]C3=CC(N)=CC=C3N=C21 ANRHNWWPFJCPAZ-UHFFFAOYSA-M 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 239000001003 triarylmethane dye Substances 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明提供用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件的芯片接合薄膜,其可以防止所述焊线的变形或断裂,可以搭载另一个半导体元件,由此可以提高半导体装置的制造成品率,本发明还提供切割/芯片接合薄膜。本发明芯片接合薄膜,用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件,其中,至少由第一胶粘剂层和第二胶粘剂层层叠而形成,所述第一胶粘剂层在压接时可以将所述焊线的一部分埋没而使其通过所述第一胶粘剂层的内部,所述第二胶粘剂层用于防止所述另一个半导体元件与焊线接触。
Description
技术领域
本发明涉及用于在通过焊线与引线框等被粘物电连接的半导体芯片等半导体元件上胶粘另一个半导体元件的芯片接合薄膜。另外,涉及所述芯片接合薄膜与切割薄膜层叠而成的切割/芯片接合薄膜。另外,涉及使用所述芯片接合薄膜或切割/芯片接合薄膜制造的半导体装置。
背景技术
近年来,应对电子设备的高功能化等,半导体装置的高密度化、高集成化的要求增强,正在推进半导体封装的大容量高密度化。为了应对这样的要求,研究了例如通过在半导体芯片上多步骤层叠另一个半导体芯片而实现半导体封装的小型化、薄型化、大容量化的方法。通常,在这样的半导体封装中,广泛采用使用焊线的丝焊法作为将半导体芯片与衬底电连接的方式。
在此,在安装于衬底上的半导体芯片上芯片接合另一个半导体芯片时,需要避开该半导体芯片上的丝焊用的电极焊盘来芯片接合其它半导体芯片。因此,例如,如图8(a)所示,采用的是使用面积比通过胶粘剂104等搭载于衬底101上的半导体芯片102小的另一个半导体芯片103,来确保利用焊线105将半导体芯片102与衬底101电连接的区域的方法(参考下述的专利文献1的图5)。
另外,如图8(b)所示,在将面积与搭载于衬底101上的半导体芯片102相同程度的另一个半导体芯片103进行层叠的情况下,采用在半导体芯片102与另一个半导体芯片103之间介入面积小于半导体芯片102等的垫片106的方法(参考下述的专利文献1的图4)。由此,可以防止另一个半导体芯片103重叠在将半导体芯片102与衬底101电连接的焊线105上。但是,在为该方法的情况下,重新需要在半导体芯片102上设置垫片106的工序。另外,为了防止焊线105与另一个半导体芯片103的接触,垫片106的厚度需要充分增大。结果,在该方法中存在不适合半导体装置的薄型化的问题。
为了解决这样的问题,公开了在利用焊线105与衬底101电连接的半导体芯片102上涂布能够确保与另一个半导体芯片103之间具有充分距离的量的芯片接合树脂,来形成由该芯片接合树脂构成的固定用胶粘层,并将所述另一个半导体芯片103层叠的方法(参考专利文献1的图1)。但是,即使通过该方法,在固定用胶粘层上芯片接合另一个半导体芯片103时,也有时焊线105与该另一个半导体芯片103的背面接触,从而焊线105变形或者断裂。结果,难以保持衬底101与半导体芯片102的电连接,存在成品率下降的问题。
现在技术文献
专利文献
专利文献1:日本特开2001-308262号公报
发明内容
本发明鉴于所述的问题点而创立,其目的在于提供用于在利用焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件的芯片接合薄膜,其能够防止所述焊线的变形或断裂,从而可以搭载另一个半导体元件,由此可以提高半导体装置的制造成品率;还提供切割/芯片接合薄膜。另外,本发明的目的在于提供通过使用所述芯片接合薄膜或者切割/芯片接合薄膜而制造的、可靠性优良的半导体装置。
本申请发明人等为了解决所述现有问题,对芯片接合薄膜、切割/芯片接合薄膜及半导体装置进行了研究。结果发现,通过使芯片接合薄膜形成为至少具有第一胶粘剂层和第二胶粘剂层的构成,可以实现所述目的,从而完成了本发明,所述第一胶粘剂层可以使焊线的一部分通过其内部,所述第二胶粘剂层防止搭载于半导体元件上的另一个半导体元件与焊线接触。
即,本发明的芯片接合薄膜,为了解决所述课题,为用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件的芯片接合薄膜,其中,至少由第一胶粘剂层和第二胶粘剂层层叠而形成,所述第一胶粘剂层在压接时可以将所述焊线的一部分埋没而使其通过所述第一胶粘剂层的内部,所述第二胶粘剂层用于防止所述另一个半导体元件与焊线接触。
根据所述构成,在将芯片接合薄膜压接在所述半导体元件上时,所述第一胶粘剂层可以将焊线的一部分埋没而使其通过所述第一胶粘剂层的内部,因此,没有必要象现有半导体装置那样在半导体元件与另一个半导体元件之间介入面积小于该半导体元件等的垫片。另外,也没有必要使所述另一个半导体元件的尺寸小于半导体元件来确保用于焊线用电极焊盘的区域。另外,在第一胶粘剂层上设置有用于防止所述另一个半导体元件与焊线接触的第二胶粘剂层,因此可以防止在芯片接合所述另一个半导体元件时焊线变形或者断裂。结果,可以良好地保持半导体元件与被粘物的电连接,可以制造可靠性优良的半导体装置。
在所述构成中,优选所述第一胶粘剂层和第二胶粘剂层各自至少由环氧树脂、酚醛树脂和丙烯酸类树脂形成,并且设所述环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类树脂的重量为Y重量份时,所述第一胶粘剂层的X/(X+Y)在0.5以上且0.95以下的范围内,所述第二胶粘剂层的X/(X+Y)在0.15以上且小于0.5的范围内。关于所述第一胶粘剂层中的环氧树脂、酚醛树脂及丙烯酸类树脂的配合量,通过将所述X/(X+Y)设定为0.5以上,使环氧树脂和酚醛树脂的合计重量大于丙烯酸类树脂的重量,因此压接时可以使焊线的一部分埋没。由此,可以在使焊线通过第一胶粘剂层内部的状态下将芯片接合薄膜粘贴到半导体元件上。另一方面,通过将X/(X+Y)设定为0.95以下,可以防止压接时第一胶粘剂层露出,可以防止被粘物一侧的丝焊用的电气端子被堵塞。另外,关于所述第二胶粘剂层中的环氧树脂、酚醛树脂及丙烯酸类树脂的配合量,通过将所述X/(X+Y)设定为小于0.5,使丙烯酸类树脂的重量比环氧树脂和酚醛树脂的合计重量大,因此可以防止在半导体元件上芯片接合另一个半导体元件时焊线接触另一个半导体元件。另一方面,通过将所述X/(X+Y)设定为0.15以上,可以使与半导体晶片的胶粘性处于良好的状态。
在所述构成中,优选所述芯片接合薄膜的总厚度在40μm~120μm的范围内,并且设所述第一胶粘剂层的厚度为d1(μm)、第二胶粘剂层的厚度为d2(μm)时,d1/(d1+d2)在0.6以上且0.95以下的范围内。对于总厚度在40μm~120μm的范围内的芯片接合薄膜,通过将所述d1/(d1+d2)设定为0.6以上,可以防止将半导体元件与被粘物电连接的焊线伸出到第二胶粘剂层一侧,可以将该焊线的埋入停留在第一胶粘剂层的内部。另外,通过将所述d1/(d1+d2)设定为0.95以下,可以确保第二胶剂层防止半导体元件与焊线接触。
在所述构成中,优选所述第一胶粘剂层的热固化前的120℃下的剪切损耗模量G”在5×102Pa以上且1.5×104Pa以下的范围内,并且所述第二胶粘剂层的热固化前的120℃下的剪切损耗模量G”在2×104Pa以上且1×106Pa以下的范围内。通过将第一胶粘剂层的热固化前的120℃下的剪切损耗模量G”设定为5×102Pa以上且1.5×104Pa以下,在将芯片接合薄膜压接到半导体元件上时可以在不产生空隙(气泡)的情况下将焊线埋没,并且也可以防止第一胶粘剂层露出。另一方面,通过将第二胶粘剂层的热固化前的120℃下的剪切损耗模量G”设定为2×104Pa以上且1×106Pa以下,在将另一个半导体元件芯片接合到半导体元件上时可以防止埋没在第一胶粘剂层中的焊线的一部分与另一个半导体元件的背面接触。
在所述构成中,优选所述第一胶粘剂层中的金属离子含量为100ppm以下。由此,即使在通过第一胶粘剂层内部的焊线有多根的情况下,也可以防止在这些焊线间产生电气干扰,可以制造高可靠性的半导体装置。
另外,在所述构成中,优选所述第二胶粘剂层、或者在该第二胶粘剂层上设置其它胶粘剂层时,该其它胶粘剂层中的至少任意一个中,含有染料和颜料中的至少任意一种。由此,可以容易地识别芯片接合薄膜的表面和背面,并且也可以容易与其它种类的芯片接合薄膜进行区别。结果,在半导体装置的制造工艺中可以缩短停机时间,可以提高成品率。
在所述构成中,优选所述第一胶粘剂层的玻璃化转变温度为20℃~60℃,并且所述第二胶粘剂层的玻璃化转变温度为60℃以下。通过将第一胶粘剂层的玻璃化转变温度设定在20℃~60℃的范围内,例如,可以控制与切割薄膜的剥离力,从而确保良好的拾取性。另外,通过将第二胶粘剂层的玻璃化转变温度设定为60℃以下,可以确保对硅晶片的胶粘力。
在所述构成中,优选热固化后的175℃下的拉伸储能模量在0.5MPa以上且100MPa以下的范围内。由此,可以确保吸湿可靠性。
另外,本发明的切割/芯片接合薄膜,为了解决所述课题,其特征在于,具有:在基材上至少设置有粘合剂层的切割薄膜,和设置在所述粘合剂层上的所述芯片接合薄膜。
另外,本发明的半导体装置,为了解决所述课题,其特征在于,通过所述的芯片接合薄膜或者所述的切割/芯片接合薄膜制造。由此,可以提供不使用垫片,而是将焊线的一部分埋入到第一胶粘剂层的内部,并且通过第二胶粘剂层防止焊线与另一个半导体元件接触从而进行三维安装的高可靠性的半导体装置。
发明效果
根据本发明,在将芯片接合薄膜压接到半导体元件上时,第一胶粘剂层将焊线的一部分埋没而使其可以通过所述第一胶粘剂层的内部,因此,没有必要象现有的半导体装置那样在半导体元件与另一个半导体元件之间介入面积比该半导体元件等小的垫片。另外,也没有必要使所述另一个半导体元件的尺寸小于半导体元件来确保用于焊线用电极焊盘的区域。另外,第二胶粘剂层防止焊线与另一个半导体元件接触,因此可以防止焊线变形或断裂。结果,可以保持半导体元件与被粘物的电连接,可以制造可靠性优良的半导体装置。
附图说明
图1为表示本发明的一实施方式的芯片接合薄膜的示意剖面图。
图2为表示具有所述芯片接合薄膜的切割/芯片接合薄膜的示意剖面图。
图3为表示在所述切割/芯片接合薄膜上安装有半导体晶片的状态的示意剖面图。
图4为表示切割所述半导体晶片的状态的示意剖面图。
图5为表示芯片接合到被粘物上的半导体元件的示意剖面图。
图6为表示隔着所述芯片接合薄膜将另一个半导体元件芯片接合到所述半导体元件上的状态的示意剖面图。
图7为表示将所述半导体元件和另一个半导体元件树脂密封的状态的示意剖面图。
图8为表示使用现有的芯片接合薄膜将另一个半导体芯片三维安装到半导体芯片上的例子的示意剖面图。
标号说明
1 第一胶粘剂层
2 第二胶粘剂层
4 半导体晶片
5 另一个半导体芯片
6 被粘物
7 焊线
9 密封树脂
10 芯片接合薄膜
11 切割/芯片接合薄膜
12 切割薄膜
13 基材
14 粘合剂层
15 半导体芯片
17 切割环
101 衬底
102 半导体芯片
103 另一个半导体芯片
104 胶粘剂
105 焊线
106 垫片
具体实施方式
以下对本实施方式的芯片接合薄膜进行说明。图1是概略表示本实施方式的芯片接合薄膜的示意剖面图。
如图1所示,芯片接合薄膜10至少为第一胶粘剂层1和第二胶粘剂层2层叠而成的结构。但是,也可以是根据需要层叠其它胶粘剂层的构成。此时,其它胶粘剂层优选设置在第二胶粘剂层2上。
所述第一胶粘剂层1和第二胶粘剂层2各自优选至少由环氧树脂、酚醛树脂和丙烯酸类树脂形成。其中,设所述环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类树脂的重量为Y重量份时,所述第一胶粘剂层的X/(X+Y)优选在0.5以上且0.95以下的范围内,更优选在0.51以上且0.94以下的范围内,进一步优选在0.52以上且0.93以下的范围内。通过将所述X/(X+Y)设定为0.5以上,在将芯片接合薄膜10压接到通过焊线与被粘物电连接的半导体元件上时,可以将该焊线埋没在第一胶粘剂层中。另一方面,通过将X/(X+Y)设定为0.95以下,可以防止所述压接时第一胶粘剂层露出,可以防止被粘物一侧的丝焊用的电气端子被堵塞。
另外,所述第二胶粘剂层的X/(X+Y)优选在0.15以上且小于0.5的范围内,更优选0.16以上且小于0.49的范围内,进一步优选0.17以上且小于0.48的范围内。通过将所述X/(X+Y)设定为0.15以上,可以使与半导体晶片的胶粘性良好。另一方面,通过将所述X/(X+Y)设定为小于0.5,在将另一个半导体元件芯片接合到半导体元件上时,可以防止埋入第一胶粘剂层1的内部的焊线的一部分与另一个半导体元件的背面接触。由此,可以防止焊线的变形或断裂,可以制造高可靠性的半导体装置。
所述环氧树脂,如果是一般作为胶粘剂组合物使用的环氧树脂则没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四(羟苯基)乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或者缩水甘油胺型等环氧树脂。这些物质可以单独使用或者两种以上组合使用。这些环氧树脂中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂或四(羟苯基)乙烷型环氧树脂。这是因为:这些环氧树脂与作为固化剂的酚醛树脂的反应性高,并且耐热性等优良。另外,环氧树脂中腐蚀半导体元件的离子性杂质等的含量少。
另外,所述酚醛树脂作为所述环氧树脂的固化剂起作用,可以列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶酚醛树脂型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些物质可以单独使用或者两种以上组合使用。这些酚醛树脂中,优选下述化学式表示的联苯型苯酚酚醛清漆树脂或苯酚芳烷基树脂。这是因为可以改善半导体装置的连接可靠性。
(所述n为0~10的自然数)。
另外,所述n优选为0~10的自然数,更优选0~5的自然数。通过设在所述数值范围内,可以确保芯片接合薄膜10的流动性。
所述环氧树脂与酚醛树脂的配合比例,例如,以所述酚醛树脂中的羟基相对于所述环氧树脂成分中的环氧基1当量为0.5当量~2.0当量的方式进行配合是优选的。另外,更优选0.8当量~1.2当量。即,这是因为:两者的配合比例在所述范围以外时,不能进行充分的固化反应,从而环氧树脂固化物的特性易于劣化。
本实施方式中,也可以使用热固化催化剂作为芯片接合薄膜10的构成材料。作为所述热固化催化剂,没有特别限制,可以列举例如:咪唑类化合物、三苯基膦类化合物、胺类化合物、三苯基硼烷类化合物、三卤代硼烷类化合物等。这些物质可以单独使用或者两种以上组合使用。
作为所述咪唑类化合物,可以列举:2-甲基咪唑(商品名:2MZ)、2-十一烷基咪唑(商品名:C11-Z)、2-十七烷基咪唑(商品名:C17Z)、1,2-二甲基咪唑(商品名:1.2DMZ)、2-乙基-4-甲基咪唑(商品名:2E4MZ)、2-苯基咪唑(商品名:2PZ)、2-苯基-4-甲基咪唑(商品名:2P4MZ)、1-苄基-2-甲基咪唑(商品名:1B2MZ)、1-苄基-2-苯基咪唑(商品名:1B2PZ)、1-氰基乙基-2-甲基咪唑(商品名:2MZ-CN)、1-氰基乙基-2-十一烷基咪唑(商品名:C11Z-CN)、1-氰基乙基-2-苯基咪唑鎓偏苯三甲酸盐(商品名:2PZCNS-PW)、2,4-二氨基-6-[2’-甲基咪唑基(1)’]乙基-均三嗪(商品名:2MZ-A)、2,4-二氨基-6-[2’-十一烷基咪唑基(1)’]乙基-均三嗪(商品名:C11Z-A)、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基(1)’]乙基-均三嗪(商品名:2E4MZ-A)、2,4-二氨基-6-[2’-甲基咪唑基(1)’]乙基-均三嗪异氰脲酸加成物(商品名:2MA-OK)、2-苯基-4,5-二羟基甲基咪唑(商品名:2PHZ-PW)、2-苯基-4-甲基-5-羟甲基咪唑(商品名:2P4MHZ-PW)等(均为四国化成工业株式会社制)。
作为所述三苯基膦类化合物,没有特别限制,可以列举例如:三苯基膦、三丁基膦、三(对甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦等三有机膦、四苯基溴化(商品名:TPP-PB)、甲基三苯基(商品名:TPP-MB)、甲基三苯基氯化(商品名:TPP-MC)、甲氧基甲基三苯基(商品名:TPP-MOC)、苄基三苯基氯化(商品名:TPP-ZC)等(均为北兴化学公司制)。另外,作为所述三苯基膦类化合物,优选对环氧树脂实质上显示非溶解性的化合物。对环氧树脂为非溶解性时,可以抑制热固化过度进行。作为具有三苯基膦结构、并且对环氧树脂实质上显示非溶解性的热固化催化剂,可以例示例如:甲基三苯基(商品名:TPP-MB)等。另外,所述“非溶解性”,是指包含三苯基膦类化合物的热固化催化剂在包含环氧树脂的溶剂中为不溶性,更具体而言,是指在温度10℃~40℃的范围内10重量%以上不溶解。
作为所述三苯基硼烷类化合物,没有特别限制,也包含例如具有三苯基硼烷结构和三苯基膦结构的化合物。作为该具有三苯基硼烷结构和三苯基膦结构的化合物,没有特别限制,可以列举例如:四苯基四苯基硼酸盐(商品名:TPP-K)、四苯基四对甲苯硼酸盐(商品名:TPP-MK)、苄基三苯基四苯基硼酸盐(商品名:TPP-ZK)、三苯基膦三苯基硼烷(商品名:TPP-S)等(均为北兴化学株式会社制)。
作为所述胺类化合物,没有特别限制,可以列举例如:一乙醇胺三氟硼酸盐(ステラケミフア株式会社制)、双氰胺(ナカライテスク株式会社制)等。
作为所述三卤代硼烷类化合物,没有特别限制,可以列举例如三氯硼烷等。
作为所述热固化催化剂的配合比例,相对于有机成分100重量份优选在0.01重量份~1重量份的范围内,更优选0.01重量份~0.5重量份的范围内,特别优选0.01重量份~0.4重量份的范围内。通过将配合比例设定为0.01重量份以上,可以使在芯片接合时未反应的环氧基之间例如在后固化工序之前聚合,从而使该未反应的环氧基减少或消失。结果,可以制造将另一个半导体元件可靠地胶粘固定在半导体元件上且无剥离的半导体装置。另一方面,通过将配合比例设定为1重量份以下,可以防止产生固化障碍。
作为所述丙烯酸类树脂,可以列举例如:以一种或两种以上具有碳原子数30以下、特别是碳原子数4~18的直链或支链烷基的丙烯酸或甲基丙烯酸的酯为成分的聚合物等。作为所述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者十二烷基等。
另外,作为形成所述聚合物的其它单体,没有特别限制,可以列举例如:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体;马来酸酐或衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;或者丙烯酰磷酸-2-羟基乙酯等含磷酸基单体。这些物质可以单独使用或者两种以上组合使用。
另外,作为所述丙烯酸类树脂优选丙烯酸类共聚物。作为该丙烯酸类共聚物中使用的单体成分,没有特别限制,可以列举例如:丙烯酸丁酯、丙烯酸乙酯等。在本发明中,优选相对于全部单体成分含有10重量%~60重量%范围内的丙烯酸丁酯和40重量%~90重量%范围内的丙烯酸乙酯而构成的共聚物。
另外,作为可以与所述单体成分共聚的其它单体成分没有特别限制,可以列举例如:丙烯腈等。这些可共聚的单体成分的使用量,相对于全部单体成分优选在1重量%~20重量%的范围内。通过含有该数值范围内的其它单体成分,可以改善凝聚力、胶粘性等。
作为丙烯酸类共聚物的聚合方法,没有特别限制,可以采用例如:溶液聚合法、本体聚合法、悬浮聚合法、乳液聚合法等现有公知的方法。
所述丙烯酸类共聚物的玻璃化转变温度(Tg)优选为-30℃~30℃,更优选-20℃~15℃。通过将所述玻璃化转变温度设定为-30℃以上,可以确保耐热性。另一方面,通过设定为30℃以下,可以提高防止表面状态粗糙的半导体晶片的切割后的芯片飞散的效果。
所述丙烯酸类共聚物的重均分子量优选为10万以上,更优选60万~120万,特别优选70万~100万。通过将重均分子量设定为10万以上,对布线衬底等被粘物或半导体元件、半导体晶片表面的高温时的胶粘性优良,并且可以提高耐热性。另外,通过将重均分子量设定为120万以下,可以容易地溶于有机溶剂。重均分子量是通过凝胶渗透色谱法(GPC),使用标准聚苯乙烯的校准曲线的聚苯乙烯换算值。
在所述芯片接合薄膜10中,也可以含有无机填料或有机填料等填料。从提高操作性及导热性、调节熔融粘度以及赋予触变性等观点考虑,优选无机填料。但是,在第一胶粘层1中,在其内部埋没了多根焊线的一部分,这些焊线相互产生电气干扰,因此不优选。因此,对于第一胶粘剂层1而言,不优选添加能够赋予导电性的无机填料。
作为所述无机填料,没有特别限制,可以列举例如:二氧化硅、氢氧化铝、氢氧化钙、氢氧化镁、三氧化锑、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝、氮化硼、结晶二氧化硅、非晶二氧化硅等。这些填料可以单独使用或者两种以上组合使用。从提高导热性的观点考虑,优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅等。另外,从与芯片接合薄膜10的胶粘性的平衡的观点考虑,优选二氧化硅。另外,作为所述有机填料,可以列举聚酰亚胺、聚酰胺酰亚胺、聚醚醚酮、聚醚酰亚胺、聚酯酰亚胺、尼龙、聚硅氧烷等。这些填料可以单独使用或者两种以上组合使用。
所述填料的平均粒径优选为0.005μm~10μm,更优选0.05μm~1μm。填料的平均粒径为0.005μm以上时,对被粘物的润湿性良好,可以抑制胶粘性下降。另一方面,通过将所述平均粒径设定为10μm以下,可以提高添加填料对芯片接合薄膜10的增强效果,提高耐热性。另外,也可以组合使用平均粒径相互不同的填料。另外,填料的平均粒径是利用光度式粒度分布计(HORIBA制,装置名:LA-910)求出的值。
填料的含量相对于环氧树脂、酚醛树脂和丙烯酸类树脂的合计100重量份优选为超过0重量份且80重量份以下,更优选超过0重量份且70重量份以下。填料的含量为0重量份时,不存在添加填料的增强效果,有时芯片接合薄膜10的耐热性下降。另一方面,含量超过80重量份时,对半导体元件、半导体晶片的润湿性下降,有时胶粘性下降。
所述填料的形状没有特别限制,可以使用例如球形、椭球形的填料。
在使所述芯片接合薄膜10预先进行某种程度的交联的情况下,在制作时可以添加与聚合物的分子链末端的官能团等反应的多官能化合物作为交联剂。由此,可以提高高温下的胶粘特性,改善耐热性。另外,交联剂可以添加到第一胶粘剂层1以及第二胶粘剂层2双方中也可以添加到任意一个中。
作为所述交联剂,可以使用现有公知的交联剂。特别是更优选甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1,5-萘二异氰酸酯、多元醇与二异氰酸酯的加成物等多异氰酸酯化合物。作为交联剂的添加量,相对于所述聚合物100重量份通常优选设定为0.05重量份~7重量份。交联剂的量超过7重量份时,胶粘力下降,因此不优选。另一方面,低于0.05重量份时,凝聚力不足,因此不优选。另外,根据需要,也可以与这样的多异氰酸酯化合物一同含有环氧树脂等其它多官能化合物。
另外,芯片接合薄膜10中,根据需要可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。
作为所述阻燃剂,可以列举例如:三氧化二锑、五氧化二锑、溴化环氧树脂等。这些阻燃剂可以单独使用或者两种以上组合使用。
作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。
作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些离子捕获剂可以单独使用或者两种以上组合使用。
所述第一胶粘剂层1的热固化前的120℃下的剪切损耗模量G”优选在5×102Pa以上且1.5×104Pa以下的范围内,更优选在5×102Pa以上且1.2×104Pa以下的范围内,进一步优选5×102Pa以上且1×104Pa以下的范围内。通过将所述剪切损耗模量G”设定在5×102Pa以上,在将芯片接合薄膜10压接到半导体元件上时,可以防止第一胶粘剂层1的露出,可以防止堵塞被粘物一侧的丝焊用的电气端子。另一方面,通过将所述剪切损耗模量G”设定在1.5×104Pa以下,在所述压接时,可以在不产生空隙(气泡)的情况下将焊线埋没在第一胶粘剂层1中。
所述第二胶粘剂层2的热固化前的120℃下的剪切损耗模量G”优选在2×104Pa以上且1×106Pa以下的范围内,更优选2×104Pa以上且8×105Pa以下的范围内,进一步优选2×104Pa以上且5×105Pa以下的范围内。通过将所述剪切损耗模量G”设定在2×104Pa以上,在将另一个半导体元件芯片接合到半导体元件上时,可以防止在第一胶粘剂层1中埋没的焊线的一部分与另一个半导体元件的背面接触。另一方面,通过将所述剪切损耗模量G”设定在1×106Pa以下,可以确保与半导体晶片的密合性。另外,第一胶粘剂层1和第二胶粘剂层2的剪切损耗模量G”的值,例如可以通过后述的方法测定。
将本实施方式的芯片接合薄膜10芯片接合到半导体元件上时的暂时固着时的第一胶粘剂层1的剪切胶粘力,相对于该半导体元件优选为0.2MPa以上,更优选0.2MPa~10MPa。通过将所述剪切胶粘力设定为0.2MPa以上,即使在不对芯片接合薄膜10进行加热以使其完全热固化的情况下进行丝焊工序,也不会因该工序中的超声波振动或加热而在第一胶粘剂层1与半导体元件间、第二胶粘剂层2与另一个半导体元件间的胶粘面产生剪切变形。即,半导体元件不因丝焊时的超声波振动而活动,由此,可以抑制丝焊的成功率下降。
将半导体晶片安装到第二胶粘剂层2上时的该第二胶粘剂层2与半导体晶片的界面的180度剥离的剥离力优选为0.5N/10mm以上,更优选1N/10mm以上,进一步优选1.5N/10mm以上。通过将180度剥离的剥离力设定为0.5N/10mm以上,在将半导体晶片与芯片接合薄膜10一起进行刀片切割(blade dicing)而形成半导体元件时,可以减少该半导体元件的芯片飞散的发生。另外,所述180度剥离的剥离力是第二胶粘剂层2的热固化前的值。
所述芯片接合薄膜10的厚度优选在40μm~120μm的范围内。通过将总厚度设定为40μm以上,可以将焊线埋入。另一方面,通过设定为120μm以下,可以实现半导体装置的薄型化。另外,设所述第一胶粘剂层1的厚度为d1(μm)、第二胶粘剂层2的厚度为d2(μm)时,d1/(d1+d2)优选在0.6以上且0.95以下的范围内,更优选0.6以上且0.9以下的范围内,进一步优选0.7以上且0.9以下的范围内。通过将所述d1/(d1+d2)设定为0.6以上,可以防止在第一胶粘剂层1的内部埋没的焊线在第二胶粘剂层2一侧突出,可以防止焊线与另一个半导体元件接触。另一方面,通过将所述d1/(d1+d2)设定为0.95以下,即使是在焊线在第二胶粘剂层2一侧突出的情况下,也可防止焊线与另一个半导体元件接触。
所述第一胶粘剂层1中的金属离子含量优选为100ppm以下,更优选80ppm以下。通过将金属离子含量设定为100ppm以下,即使在通过第一胶粘剂层1的内部的焊线有多根的情况下,也可以防止在这些焊线间产生电气干扰,可以制造高可靠性的半导体装置。另外,所述金属离子是指例如来自后述的染料或颜料的金属离子。
所述第二胶粘剂层2中优选含有染料或颜料的至少任意一种。由此,可以容易识别芯片接合薄膜10的表面和背面,并且可以容易与其它种类的芯片接合薄膜区别。结果,可以缩短半导体装置制造工艺中的停机时间,可以提高成品率。另外,在第二胶粘剂层2上层叠其它胶粘剂层的情况下,该其它胶粘剂层中也可以添加染料或颜料。
作为所述染料,没有特别限制,具体地可以列举例如:硝基染料、亚硝基染料、二苯乙烯染料、吡咯啉酮染料、噻唑染料、偶氮染料、多偶氮染料、碳染料、quinoanyl dye(キノアニル染料)、靛酚染料、靛苯胺染料、吲达胺染料、醌亚胺染料、吖嗪染料、氧化染料、嗪染料、噻嗪染料、吖啶染料、二苯基甲烷染料、三苯基甲烷染料、呫吨染料、噻吨染料、硫化染料、吡啶染料、吡啶酮染料、噻二唑染料、噻吩染料、苯并异噻唑染料、二氰基咪唑染料、苯并吡喃染料、苯并二呋喃酮染料、喹啉染料、靛蓝染料、硫靛蓝染料、蒽醌染料、二苯甲酮染料、苯醌染料、萘醌染料、酞菁染料、花青染料、次甲基染料、多次甲基染料、偶氮甲碱染料、缩合次甲基染料、萘二甲酰亚胺染料、紫环酮(perinone)染料、三芳基甲烷染料、呫吨染料、氨基酮染料、醌型染料和靛类染料。这些染料可以单独使用或者两种以上组合使用。
所述染料的配合量,相对于第二胶粘剂层2的全部成分100重量份,优选在0.1重量份~1重量份的范围内,更优选0.1重量份~0.8重量份的范围内。通过将所述配合量设定为0.1重量份以上,可以更容易识别第二胶粘剂层2。另一方面,通过将所述配合量设定为1重量份以下,可以减少杂质离子。
作为所述颜料,没有特别限制,具体地可以列举例如:氧化钛、氧化锌、滑石、黄土、棕土(アンバ一)、高岭土、碳酸钙、氧化铁、灯黑、炉黑、象牙墨、石墨、富勒烯、炭黑、铬绿、钴蓝、翡翠绿、钴绿、酞菁绿、酞菁蓝、米洛丽蓝(ミロリブル一)、坚牢黄、双偶氮黄、缩合偶氮黄、苯并咪唑酮黄、二硝基苯胺橙、苯并咪唑酮橙、紫环酮橙、甲苯胺红、永固桃红、蒽醌红、永固红、萘酚红、缩合偶氮红、苯并咪唑酮桃红、苯并咪唑酮棕、蒽嘧啶黄、喹酞酮黄、钴紫、锰紫等。这些颜料可以单独使用或者两种以上组合使用。
所述颜料的配合量,相对于第二胶粘剂层2的全部成分100重量份,优选在0.3重量份~5重量份的范围内,更优选0.3重量份~3重量份的范围内。通过将所述配合量设定为0.3重量份以上,可以更容易识别第二胶粘剂层2。另一方面,通过将所述配合量设定为5重量份以下,可以减少杂质离子。
所述颜料的平均粒径优选在0.01μm~10μm的范围内,更优选0.01μm~5μm的范围内。通过设定在所述数值范围内,可以使颜料均匀分散。另外,颜料的平均粒径是通过光度式粒度分布计(HORIBA制,装置名:LA-910)求出的值。
所述第一胶粘剂层1和第二胶粘剂层2的至少任意一个的体积电阻率优选为1×1011Ω·cm以上,更优选1×1012Ω·cm以上。通过将体积电阻率设定为1×1011Ω·cm以上,可以得到第一胶粘剂层1及第二胶粘剂层2的充分的绝缘性。另外,第一胶粘剂层1和第二胶粘剂层2的至少任意一个的相对介电常数优选为4.5以下,更优选4以下。通过将相对介电常数设定为4.5以下,可以防止电气特性下降。另外,第一胶粘剂层1和第二胶粘剂层2的至少任意一个的电介质损耗角正切优选为0.02以下,更优选0.01以下。通过将电介质损耗角正切设定为0.02以下、更优选0.01以下,可以防止电气特性下降。
所述第一胶粘剂层1的玻璃化转变温度优选在20℃~60℃的范围内,更优选20℃~50℃的范围内。通过将所述玻璃化转变温度设定在20℃~60℃的范围内,例如,可以控制与切割薄膜12的剥离力,确保良好的拾取性。另外,所述第二胶粘剂层2的玻璃化转变温度优选为60℃以下,更优选50℃以下。通过将所述玻璃化转变温度设定为60℃以下,可以确保对硅晶片的胶粘力。
另外,芯片接合薄膜10优选由隔片保护(未图示)。隔片具有作为在供给实际应用之前保护芯片接合薄膜的保护材料的功能。另外,隔片还可以作为将芯片接合薄膜10转印到切割薄膜上时的支撑基材使用。隔片在向芯片接合薄膜上粘贴工件时剥掉。作为隔片,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、以及利用含氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行表面涂布后的塑料薄膜或纸等。
(芯片接合薄膜的制造方法)
将用于形成第一胶粘剂层1的第一胶粘剂组合物以达到预定厚度的方式涂布于经聚硅氧烷脱模处理后的第一脱模处理薄膜上,然后在预定条件下进行干燥而形成第一胶粘剂层。干燥条件可以根据需要适当设定。另一方面,将用于形成第二胶粘剂层2的第二胶粘剂组合物以达到预定厚度的方式涂布于经聚硅氧烷脱模处理后的第二脱模处理薄膜上,然后在预定条件下进行干燥而形成第二胶粘剂层。干燥条件可以根据需要适当设定。所述第一脱模处理薄膜和第二脱模处理薄膜没有特别限制,可以列举例如:由聚对苯二甲酸乙二醇酯等形成的薄膜。
另外,以所述第一胶粘剂层和第二胶粘剂层成为粘贴面的方式将两者粘贴,从而可以制作本实施方式的芯片接合薄膜10。
(切割/芯片接合薄膜)
以下,对具有所述芯片接合薄膜10的切割/芯片接合薄膜进行说明。图2是概略表示本实施方式的切割/芯片接合薄膜的示意剖面图。
如图2(a)所示,切割/芯片接合薄膜11具有所述芯片接合薄膜10层叠在切割薄膜12上而形成的结构。所述切割薄膜12具有在基材13上至少层叠有粘合剂层14的结构。芯片接合薄膜10层叠于所述粘合剂层14的芯片接合薄膜粘贴部分14a上。另外,本发明也可以如图2(b)所示为在整个粘合剂层14上层叠有芯片接合薄膜10’的构成的切割/芯片接合薄膜11’。
所述基材13作为切割/芯片接合薄膜11、11’的强度母体。可以列举例如:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷树脂、金属(箔)、纸等。粘合剂层14为紫外线固化型时,优选基材13对紫外线具有透射性。
另外,作为基材13的材料,可以列举所述树脂的交联体等聚合物。所述塑料薄膜可以不拉伸而使用,也可以根据需要进行单轴或双轴拉伸处理后使用。利用通过拉伸处理等而赋予了热收缩性的树脂片,在切割后通过使该基材13热收缩,可以减小粘合剂层14与芯片接合薄膜10、10’的胶粘面积,从而可以容易地回收半导体芯片。
为了提高与邻接层的密合性、保持性等,基材13的表面可以实施惯用的表面处理,例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离辐射线处理等化学或物理处理、利用底涂剂(例如后述的粘合物质)的涂布处理。
所述基材13可以适当地选择使用同种或不同种类的材料,根据需要也可以使用将多种材料混合后的材料。另外,为了赋予基材13防静电性能力,可以在所述基材13上设置包含金属、合金、它们的氧化物等的厚度为的导电物质的蒸镀层。基材13也可以是单层或者两种以上的多层。
基材13的厚度没有特别限制,可以适当确定,一般为约5μm~约200μm。
另外,在不损害本发明的效果等的范围内,基材13中也可以含有各种添加剂(例如,着色剂、填充剂、增塑剂、抗老化剂、抗氧化剂、表面活性剂、阻燃剂等)。
所述粘合剂层14由紫外线固化型粘合剂形成的情况下,通过照射紫外线可以增大交联度从而可以容易地使其粘合力降低,因此,通过仅对如图2(b)所示的粘合剂层14的与半导体晶片粘贴部分对应的部分14a照射紫外线,可以设置与其它部分14b的粘合力的差。
另外,通过根据图2(a)所示的芯片接合薄膜10使紫外线固化型粘合剂层14固化,可以容易地形成粘合力显著下降的所述部分14a。由于在固化且粘合力下降的所述部分14a上粘贴有芯片接合薄膜10,因此粘合剂层14的所述部分14a与第一胶粘剂层1的界面具有在拾取时容易剥离的性质。另一方面,未照射紫外线的部分具有充分的粘合力,形成所述部分14b。
如前所述,图2(b)所示的切割/芯片接合薄膜11’的粘合剂层14中,通过未固化的紫外线固化型粘合剂形成的所述部分14b与芯片接合薄膜10粘合,可以确保切割时的保持力。这样,紫外线固化型粘合剂可以以良好的胶粘-剥离平衡支撑用于将半导体芯片固着到衬底等被粘物上的芯片接合薄膜10。在图2(a)所示的切割/芯片接合薄膜11的粘合剂层14中,所述部分14b可以将切割环固定。作为所述被粘物6,没有特别限制,可以列举例如:BGA衬底等各种衬底、引线框、半导体元件、垫片等。
所述紫外线固化型粘合剂,可以没有特别限制地使用具有碳碳双键等紫外线固化性的官能团、并且显示粘合性的粘合剂。作为紫外线固化型粘合剂,可以例示例如:在丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏粘合剂中配合紫外线固化性的单体成分或低聚物成分得到的添加型的紫外线固化型粘合剂。
作为所述压敏粘合剂,从半导体晶片或玻璃等避忌污染的电子部件的超纯水或醇等有机溶剂的清洁洗涤性等的观点考虑,优选以丙烯酸类聚合物为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物,可以列举由包含丙烯酸酯和含羟基单体的单体组合物形成的丙烯酸类聚合物。其中,优选不含有含羧基单体。
作为所述丙烯酸酯,优选使用以化学式CH2=CHCOOR(式中,R为碳原子数6~10、更优选碳原子数8~9的烷基)表示的单体。碳原子数小于6时,剥离力过大,有时拾取性下降。另一方面,碳原子数超过10时,与芯片接合薄膜的胶粘性或密合性下降,结果,有时在切割时产生芯片飞散。
作为由所述化学式表示的单体,可以列举例如:丙烯酸己酯、丙烯酸庚酯、丙烯酸辛酯、丙烯酸异辛酯、丙烯酸-2-乙基己酯、丙烯酸壬酯、丙烯酸异壬酯、丙烯酸癸酯、丙烯酸异癸酯等。这些单体中,优选所述烷基R的碳原子数为8~9的单体,具体地优选丙烯酸-2-乙基己酯、丙烯酸异辛酯。另外,前面例示单体可以单独使用或者两种以上组合使用。
另外,所述丙烯酸酯的含量相对于全部单体成分优选为50重量%~99重量%,更优选70重量%~90重量%。含量低于50重量%时,剥离力过大,有时拾取性下降。但是,超过99重量%时,粘合性下降,有时在切割时产生芯片飞散。
所述丙烯酸类聚合物,也可以含有除所述化学式表示的单体以外的丙烯酸酯作为单体成分。作为这样的丙烯酸酯,可以列举除所述化学式表示的单体以外的丙烯酸烷基酯、以及具有芳香环的丙烯酸酯(例如,丙烯酸苯酯等丙烯酸芳酯等)、具有脂环烃基的丙烯酸酯(例如,丙烯酸环戊酯、丙烯酸环己酯等丙烯酸环烷酯、丙烯酸异冰片酯等)等。这些单体成分中,所述丙烯酸烷基酯、丙烯酸环烷酯是优选的,特别优选的是丙烯酸烷基酯。例示的丙烯酸酯可以单独使用或者两种以上组合使用。
作为除所述化学式表示的单体以外的丙烯酸烷基酯,可以列举例如:丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸异丙酯、丙烯酸丁酯、丙烯酸异丁酯、丙烯酸仲丁酯、丙烯酸叔丁酯、丙烯酸戊酯、丙烯酸异戊酯等烷基的碳原子数为5以下的丙烯酸烷基酯;丙烯酸十一烷酯、丙烯酸十二烷酯、丙烯酸十三烷酯、丙烯酸十四烷酯、丙烯酸十六烷酯、丙烯酸十八烷酯、丙烯酸二十烷酯等烷基的碳原子数为11以上(优选11~30)的丙烯酸烷基酯等。
另外,所述化学式表示的单体等丙烯酸烷基酯,可以是直链、支链的任意形式的丙烯酸烷基酯。
所述丙烯酸类聚合物,含有可以与所述丙烯酸酯共聚的含羟基单体作为必要成分。作为含羟基单体,可以列举例如:(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯等。这些单体可以单独使用或者两种以上组合使用。
所述含羟基单体的含量,相对于全部单体成分优选为1重量%~30重量%的范围内,更优选3重量%~10重量%的范围内。含量低于1重量%时,粘合剂的凝聚力下降,有时拾取性下降。另一方面,含量超过30重量%时,粘合剂的极性增大,与芯片接合薄膜的相互作用变强,从而难以剥离。
为了改善凝聚力、耐热性等,所述丙烯酸类聚合物根据需要可以含有与能够同所述丙烯酸酯或含羟基单体共聚的其它单体成分对应的单元。作为这样的其它单体成分,可以列举例如:甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸异丙酯、甲基丙烯酸丁酯、甲基丙烯酸异丁酯、甲基丙烯酸仲丁酯、甲基丙烯酸叔丁酯等甲基丙烯酸酯;马来酸酐、衣康酸酐等酸酐单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;丙烯酰磷酸-2-羟基乙酯等含磷酸基单体;苯乙烯、乙烯基甲苯、α-甲基苯乙烯等苯乙烯类单体;乙烯、丁二烯、异戊二烯、异丁烯等烯烃或二烯类;氯乙烯等含卤素原子单体;含氟(甲基)丙烯酸酯等含氟原子单体;丙烯酰胺、丙烯腈等。
所述丙烯酸类聚合物,如前所述,优选不含有含羧基单体。这是因为含有含羧基单体时,羧基与芯片接合薄膜10中的环氧树脂的环氧基发生反应,由此粘合剂层14与芯片接合薄膜10的胶粘性增大,从而两者的剥离性下降。作为这样的含羧基单体,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、马来酸、富马酸、巴豆酸等。
所述丙烯酸类聚合物,可以通过将单一单体或两种以上单体的混合物聚合来得到。聚合可以通过溶液聚合(例如,自由基聚合、阴离子聚合、阳离子聚合等)、乳液聚合、本体聚合、悬浮聚合、光聚合(例如,紫外线(UV)聚合)等任意方式进行。从防止对洁净的被粘物的污染等观点考虑,优选低分子量物质的含量少。从该点考虑,丙烯酸类聚合物的数均分子量优选为约35万~约100万,更优选约45万~约80万。
另外,为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量,所述粘合剂中也可以适当采用外部交联剂。外部交联方法的具体手段可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂并使其反应的方法。使用外部交联剂时,其使用量根据与欲交联的基础聚合物的平衡以及作为粘合剂的使用用途适当确定。一般而言,相对于所述基础聚合物100重量份,优选配合约5重量份以下,更优选配合0.1重量份~5重量份。另外,根据需要,在粘合剂中除所述成分以外也可以使用现有公知的各种增粘剂、抗老化剂等添加剂。
作为配合的所述紫外线固化性单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,紫外线固化性低聚物成分可以列举:氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量在约100~约30000的范围内是适当的。紫外线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类适当地确定能够降低粘合剂层的粘合力的量。一般而言,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为5重量份~500重量份,优选约40重量份~约150重量份。
另外,作为紫外线固化型粘合剂,除了前面说明的添加型紫外线固化型粘合剂以外,还可以列举使用在聚合物侧链或主链中或者主链末端具有碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂无需含有或者不大量含有作为低分子量成分的低聚物成分等,因此低聚物成分等不会随时间推移在粘合剂中移动,可以形成稳定的层结构的粘合剂层,因此优选。
所述具有碳碳双键的基础聚合物,可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物,优选以丙烯酸类聚合物作为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架,可以列举前面例示过的丙烯酸类聚合物。
向所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制,可以采用各种方法,而将碳碳双键导入聚合物侧链在分子设计上比较容易。可以列举例如:预先将具有官能团的单体与丙烯酸类聚合物共聚后,使具有能够与该官能团反应的官能团和碳碳双键的化合物在保持碳碳双键的紫外线固化性的情况下进行缩合或加成反应的方法。
作为这些官能团的组合例,可以列举例如:羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中考虑反应追踪的容易性,优选羟基与异氰酸酯基的组合。另外,如果是通过这些官能团的组合而生成所述具有碳碳双键的丙烯酸类聚合物的组合,则官能团可以在丙烯酸类聚合物与所述化合物的任意一侧,而在所述的优选组合中,优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基的情况。此时,作为具有碳碳双键的异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基联苯酰异氰酸酯等。另外,作为丙烯酸类聚合物,可以使用将前面例示的含羟基单体或2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚类化合物等共聚而得到的聚合物。
所述内在型紫外线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合所述紫外线固化性单体成分或低聚物成分。紫外线固化性低聚物成分等相对于基础聚合物100重量份通常在30重量份的范围内,优选0重量份~10重量份的范围。
所述紫外线固化型粘合剂在通过紫外线等固化时含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-吗啉基)丙烷-1-酮等苯乙酮类化合物;苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物;联苯酰二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯甲酰苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤代酮;酰基氧化膦;酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约0.05重量份~约20重量份。
另外,作为紫外线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中所公开的、含有具有2个以上不饱和键的加成聚合性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物、和羰基化合物、有机硫化合物、过氧化物、胺、盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
作为在所述粘合剂层14中形成所述部分14a的方法,可以列举:在基材13上形成紫外线固化型粘合剂层14后,对所述部分14a局部地照射紫外线使其固化的方法。局部的紫外线照射可以通过形成有与半导体晶片粘贴部分10a以外的部分10b等对应的图案的光掩模来进行。另外,可以列举点状照射紫外线进行固化的方法等。紫外线固化型粘合剂层14的形成可以通过将设置在隔片上的紫外线固化型粘合剂层转印到基材13上来进行。局部的紫外线照射也可以对设置在隔片上的紫外线固化型粘合剂层14进行。
切割/芯片接合薄膜10的粘合剂层14中,可也以对粘合剂层14的一部分进行紫外线照射,使所述部分14a的粘合力<其它部分14b的粘合力。即,可以使用对基材13的至少单面的、与半导体晶片粘贴部分10a对应的部分以外的部分的整体或局部进行遮光的基材,在该基材上形成紫外线固化型粘合剂层14后进行紫外线照射,使与半导体晶片粘贴部分10a对应的部分固化,从而形成粘合力下降的所述部分14a。作为遮光材料,可以通过在支撑薄膜上印刷或蒸镀等能够作为光掩模的材料来制作。由此,可以有效地制造本发明的切割/芯片接合薄膜10。
关于切割/芯片接合薄膜11,优选以粘合剂层14中的所述部分14a对第一胶粘剂层1的粘合力小于所述其它部分14b对切割环的粘合力的方式进行设计。所述部分14a对第一胶粘剂层1的粘合力,优选为0.5N/20mm以下,更优选0.01N/20mm~0.42N/20mm,进一步优选0.01N/20mm~0.35N/20mm。另一方面,所述其它部分14b对切割环的粘合力,优选为0.5N/20mm~20N/20mm。即使所述部分14a的剥落粘合力低,通过所述其它部分14b的粘合力,也可以抑制芯片飞散,发挥对晶片加工充分的保持力。另外,这些粘合力基于在常温(23℃)、剥离角度90度、拉伸(剥离)速度300mm/分钟条件下的测定值。
切割/芯片接合薄膜11’中,优选以粘合剂层14中的所述部分14a对第一胶粘剂层1的粘合力比所述其它部分14b对不同于半导体晶片粘贴部分1a的部分1b的粘合力小的方式进行设计。基于常温(23℃)下的粘合力(剥离角度90度、剥离速度300mm/分钟),所述部分14a的粘合力从晶片的固定保持力或形成的芯片的回收性等观点考虑优选为0.01N/20mm~0.2N/20mm。粘合力低于0.01N/20mm时,半导体元件的胶粘固定不充分,因此在切割时有时产生芯片飞散。另外,粘合力超过0.2N/20mm时,粘合剂层14与第一胶粘剂层1过度胶粘,因此有时半导体元件难以拾取。
另外,关于所述切割/芯片接合薄膜11、11’,优选以第二胶粘剂层2对半导体晶片的粘合力比第一胶粘剂层1对所述部分14a的粘合力大的方式进行设计。对半导体晶片的粘合力,可以根据半导体晶片的种类进行适当调节。第一胶粘剂层1对所述部分14a的粘合力(常温(23℃)、剥离角度90度、剥离速度300mm/分钟)优选为0.5N/20mm以下,更优选0.01N/20mm~0.42N/20mm,进一步优选0.01N/20mm~0.35N/20mm。另一方面,第二胶粘剂层2对半导体晶片的粘合力(常温(23℃)、剥离角度90度、剥离速度300mm/分钟)从切割时、拾取时、芯片接合时的可靠性、拾取性的观点考虑,优选为10N/20mm~50N/20mm以下,更优选10N/20mm~30N/20mm。
另外,在紫外线照射时因氧而产生固化障碍的情况下,优选从紫外线固化型粘合剂层14的表面隔绝氧(空气)。其方法可以列举例如:用隔片包覆粘合剂层14的表面的方法、或者在氮气氛围中进行紫外线等紫外线照射的方法等。
粘合剂层14的厚度没有特别限制,从同时实现防止芯片切割面的缺陷和固定保持胶粘层等观点考虑,优选为约1μm至约50μm。进一步优选2μm~30μm、更优选5μm~25μm。另外,粘合剂层14可以为单层,也可以为多层层叠而成。
粘合剂层14的剪切储能模量在23℃和150℃下优选为5×104Pa~1×1010Pa,更优选1×105Pa~1×108Pa。剪切储能模量低于5×104Pa时,有时粘合剂层14与芯片接合薄膜10、10’的剥离变得困难。另一方面,剪切储能模量超过1×1010Pa时,有时粘合剂层14与芯片接合薄膜10、10’之间的密合性下降。粘合剂层14的剪切储能模量是通过如下方法得到的值。即,首先将粘合剂层成形为厚约1.5mm、直径7.9mm的圆筒状。然后,使用Rheometric Scientific公司制造的ARES粘弹性测定装置作为动态粘弹性测定装置,将各粘合剂层安装到平行板夹具上,在施与频率1Hz的剪切应变的同时使温度以5℃/分钟的升温速度在23℃至150℃的温度范围变化。通过测定此时的弹性模量,可以得到23℃和150℃下的剪切储能模量。另外,粘合剂层14为辐射线固化型的情况下,所述剪切储能模量的值为辐射线固化后的值。另外,剪切储能模量例如可以通过添加外部交联剂来适当调节。
另外,在不损害本发明效果等的范围内,粘合剂层14中可以含有各种添加剂(例如,着色剂、增稠剂、增量剂、填充剂、增粘剂、增塑剂、抗老化剂、抗氧化剂、表面活性剂、交联剂等)。
本实施方式的切割/芯片接合薄膜10,可以通过以下方式制作。
首先,基材层13可以通过现有公知的制膜方法制成膜。作为该制膜方法,可以例示例如:压延制膜法、有机溶剂中的流延法、密闭体系中的吹塑挤出法、T形模头挤出法、共挤出法、干式层压法等。
然后,在基材层13上涂布粘合剂组合物,并进行干燥(根据需要进行加热交联),从而形成粘合剂层14。作为涂布方法可以列举:辊涂、丝网涂布、凹版涂布等。另外,涂布可以直接在基材13上进行,也可以涂布到表面进行剥离处理后的剥离纸等上后转印到基材13上。
接着,以芯片接合薄膜10中的第一胶粘剂层1与粘合剂层14为粘贴面的方式将两者粘贴。另外,芯片接合薄膜10的粘贴,在粘合剂层14中的芯片接合薄膜粘贴部分14a上进行。由此,可以得到本实施方式的切割/芯片接合薄膜10。
(半导体装置的制造方法)
以下对使用本实施方式的切割/芯片接合薄膜11制造半导体装置的方法进行说明。本实施方式的切割/芯片接合薄膜11,可以适合用于将多个半导体芯片层叠在被粘物上进行三维安装的情况。更具体而言,适合在已经芯片接合到被粘物上并且通过焊线与该被粘物电连接的半导体芯片上安装另一个半导体芯片的情况(FoW(线上薄膜(Film onWire)))。以下,以将多个半导体芯片进行三维安装的情况为例进行说明。图3是表示通过芯片接合薄膜安装半导体元件的例子的示意剖面图。
首先,如图3所示,在切割/芯片接合薄膜11中的第二胶粘剂层2上压接半导体晶片4,将其胶粘保持而固定(安装工序)。本工序在利用压接辊等挤压手段进行挤压的同时进行。压接时的温度可以根据需要适当设定,通常优选在40℃~100℃的范围内。另外,压力也可以根据需要适当设定,通常优选在0.1MPa~1MPa的范围内。另外,在粘贴有半导体晶片4的切割/芯片接合薄膜11的粘合剂层14周边部,粘贴有切割环17。
然后,如图4所示,进行半导体晶片4的切割(切割工序)。由此,将半导体晶片4切割为规定的尺寸而小片化,形成所述另一个半导体芯片5。切割例如按照常规方法从半导体晶片4的电路面一侧进行。另外,切入深度优选进行到切割薄膜12。本工序中使用的切割装置没有特别限制,可以使用现有公知的切割装置。另外,即使在切割后半导体芯片5也由切割/芯片接合薄膜11胶粘固定,因此可以抑制芯片缺口或芯片飞散,并且也可以抑制另一个半导体芯片5的破损。
为了将由切割/芯片接合薄膜11胶粘固定的另一个半导体芯片5与芯片接合薄膜10(第一胶粘剂层1和第二胶粘剂层2)一起从切割薄膜上剥离,进行拾取(拾取工序)。拾取的方法没有特别限制,可以采用现有公知的各种方法。可以列举例如,用针将各个另一个半导体芯片5从切割/芯片接合薄膜11一侧向上推,利用拾取装置将被上推的另一个半导体芯片5拾取的方法等。另外,拾取条件也可以根据需要适当设定。另外,粘合剂层14中的所述芯片接合薄膜粘贴部分14a预先进行了紫外线固化,因此拾取可以在不对粘合剂层14照射紫外线的情况下进行。但是,也可以通过对粘合剂层14照射紫外线而进一步减小对芯片接合薄膜的胶粘力的情况下进行拾取。
然后,如图5和图6所示,将带有芯片接合薄膜的另一个半导体芯片5芯片接合到已经使用另一芯片接合薄膜8芯片接合到被粘物6上的半导体芯片15上(芯片接合工序)。芯片接合工序以焊线7的一部分埋没到第一胶粘剂层1的内部的方式利用压接来进行。另外,芯片接合薄膜10具有第二胶粘剂层2,因此焊线7不接触另一个半导体芯片5的背面。芯片接合条件可以根据需要适当设定,通常可以在80℃~160℃的芯片接合温度、0.05MPa~1MPa的芯片接合压力、0.1秒~10秒的芯片接合时间的范围内进行。
接着,通过对芯片接合薄膜10进行加热处理而使其热固化,从而将另一个半导体芯片5胶粘到半导体芯片15上(热固化工序)。作为加热处理条件,优选温度在80℃~180℃的范围内,并且加热时间为0.1小时~24小时、优选0.1小时~4小时、更优选0.1小时~1小时的范围内。
然后,进行利用焊线7将被粘物6的端子部(内部引线)的前端与另一个半导体芯片5上的电极焊盘(未图示)电连接的丝焊工序。作为所述焊线7,可以使用例如:金线、铝线或铜线等。进行丝焊时的温度在80℃~250℃的范围内、优选80℃~220℃的范围内进行。另外,其加热时间为几秒~几分钟。接线在加热到所述温度范围内的状态下通过超声波的振动能与外加加压的压接能的组合来进行。
在此,热固化后的芯片接合薄膜10在175℃下优选具有0.01MPa以上的剪切胶粘力,更优选0.01MPa~5MPa。通过使热固化后的175℃下的剪切胶粘力为0.01MPa以上,可以防止由于丝焊工序时的超声波振动或加热而在芯片接合薄膜10与另一个半导体芯片5或被粘物6的胶粘面产生剪切变形。即,半导体元件不会因丝焊时的超声波振动而活动,由此,可以防止丝焊的成功率下降。
另外,丝焊工序也可以在不进行通过所述热固化工序使芯片接合薄膜10热固化的情况下进行。在该情况下,如前所述,芯片接合薄膜10’的25℃下的剪切胶粘力对于半导体芯片15优选为0.2MPa以上,更优选0.2MPa~10MPa。由此,即使在不使芯片接合薄膜10完全热固化的情况下进行丝焊工序,也不会由于该工序中的超声波振动或加热而在芯片接合薄膜10与半导体芯片15或另一个半导体芯片5的胶粘面上产生剪切变形。即,半导体元件不会因丝焊时的超声波振动而活动,由此,可以防止丝焊的成功率下降。另外,即使进行丝焊工序,未固化的芯片接合薄膜10也不会完全热固化。
接着,如图7所示,用密封树脂9将半导体芯片15等密封(密封工序)。本工序为了保护搭载于被粘物6的半导体芯片15等或焊线7而进行。本工序通过用模具将密封用的树脂成形来进行。作为密封树脂9,例如使用环氧类的树脂。树脂密封时的加热温度,通常在175℃下进行60秒~90秒,但是,本发明不限于此,也可以在例如165℃~185℃下进行几分钟固化。由此,使密封树脂固化,并且在芯片接合薄膜10未被热固化的情况下也可以使该芯片接合薄膜10热固化。即,本发明中,即使在不进行后述的后固化工序的情况下,也可以在本工序中使芯片接合薄膜10热固化而胶粘,从而可以有助于减少制造工序数以及缩短半导体装置的制造时间。
在所述后固化工序中,使在所述密封工序中固化不足的密封树脂9完全固化。即使在密封工序中芯片接合薄膜10未被热固化的情况下,在本工序中,也可以与密封树脂9的固化一起使芯片接合薄膜10热固化而胶粘固定。本工序中的加热温度,根据密封树脂的种类而不同,例如,在165℃~185℃的范围内,加热时间为约0.5小时~约8小时。
实施例
以下,例示本发明的优选实施例进行详细说明,但是,该实施例中记载的材料或配合量等只要没有特别限定的记载,则本发明的范围并不限于此。另外,“份”是指“重量份”。
(实施例1)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)242份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)220份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)489份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)660份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)10份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)10份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)63份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例2)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)53份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)56份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)146份、球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)150份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)20份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)16份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)60份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例3)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)33份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)36份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)76份、球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)100份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)44份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)54份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)100份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例4)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)242份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)220份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)489份、球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)660份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)50份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例5)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)23份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)26份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)52份、球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)120份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)10份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)10份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)63份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例6)
[第一胶粘剂层的制作]
将作为以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸类共聚物的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)100份、环氧树脂A(JER株式会社制,商品名:Epicoat 1004)242份、环氧树脂B(JER株式会社制,商品名:Epicoat 827)220份、酚醛树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)489份、球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)660份和作为热固化催化剂的2-十一烷基咪唑(四国化成工业株式会社制,商品名:C11-Z)3份溶解于甲乙酮中,制备浓度23.6重量%的第一胶粘剂组合物。
将该第一胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜A(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度60μm的第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)80份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)86份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)60份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件是:温度80℃、粘贴压力0.3MPa、层压速度10mm/秒。
(实施例7)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
关于本实施例的第二胶粘剂层,除了厚度变为30μm以外,与实施例1同样地在脱模处理薄膜B上形成。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度90μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例8)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
关于本实施例的第二胶粘剂层,除了厚度变为5μm以外,与实施例1同样地在脱模处理薄膜B上形成。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度65μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例9)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
关于本实施例的第二胶粘剂层,除了厚度变为2μm以外,与实施例1同样地在脱模处理薄膜B上形成。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度62μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例10)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
关于本实施例的第二胶粘剂层,除了厚度变为60μm以外,与实施例1同样地在脱模处理薄膜B上形成。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度120μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例11)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
将二聚环戊二烯型环氧树脂(DIC株式会社制,商品名:EPICLONHP-7200H)10份、酚醛树脂(三井化学株式会社制造,商品名:ミレツクスXLC-4L)10份、作为丙烯酸类树脂的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制,商品名:SG-80H)100份、染料(オリエント化学工业株式会社制造,商品名:OIL RED 330)0.5份和球形二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)63份溶解于甲乙酮中,制备浓度23.6重量%的第二胶粘剂组合物。
将该第二胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜B(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度10μm的第二胶粘剂层。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例12)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用染料(オリエント化学工业株式会社制造,商品名:OIL BLUE 630)以外,与实施例11相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例13)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用染料(オリエント化学工业株式会社制造,商品名:OIL YELLOW 129)以外,与实施例11相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例14)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用染料(オリエント化学工业株式会社制造,商品名:OIL GREEN 502)以外,与实施例11相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例15)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了不添加染料,并且添加63份作为填料的炭黑(大日精化株式会社制造,商品名:NAF 5091 Black)以外,与实施例11相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例16)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用作为填料的氧化铝填料(电气化学工业株式会社制造,商品名:DAM-03)以外,与实施例15相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例17)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用作为填料的镍填料(三井金属株式会社制造,商品名:SPQ03S)以外,与实施例15相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例18)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用作为填料的铜填料(三井金属株式会社制造,商品名:1110)以外,与实施例15相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例19)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了使用作为填料的氧化钛填料(大日精化株式会社制造,商品名:EP-56 White)以外,与实施例15相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(实施例20)
[第一胶粘剂层的制作]
关于本实施例的第一胶粘剂层,使用与实施例1同样第一胶粘剂层。
[第二胶粘剂层的制作]
作为本实施例的第二胶粘剂层,除了不添加填料以外,与实施例15相同。
[芯片接合薄膜的制作]
将在所述脱模处理薄膜A上形成的第一胶粘剂层和在脱模处理薄膜B上形成的第二胶粘剂层以第一胶粘剂层和第二胶粘剂层为粘贴面的方式进行粘贴,在脱模处理薄膜A和脱模处理薄膜B之间形成厚度70μm的芯片接合薄膜。粘贴条件与实施例1相同。
(剪切损耗模量G”的测定)
对于各实施例中制作的芯片接合薄膜中的第一胶粘剂层和第二胶粘剂层,分别测定热固化前的120℃下剪切损耗模量G”。测定中使用固态粘弹性测定装置(Rheometric Scientific公司制,ARES)。制作10mm见方、厚度1mm的试样,求出各试样的25℃~300℃的剪切损耗模量G”。结果如下表1所示。
(热固化后的175℃下的拉伸储能模量)
将各实施例中制作的芯片接合薄膜分别在175℃、5小时的条件下进行热处理使其热固化。然后,使用裁切刀由热固化后的芯片接合薄膜分别切出长40mm、宽10mm的条状试样。另外,使用固态粘弹性测定装置(Rheometric Scientific公司制,RSA III),在升温速度10℃/分钟、频率1MHz的条件下测定各试样的-50℃~300℃的拉伸储能模量,求出175℃下的拉伸储能模量。
(芯片接合薄膜的厚度)
使用SEM观察各实施例中制作的芯片接合薄膜中的第一胶粘剂层和第二胶粘剂层的剖面,测定第一胶粘剂层的厚度d1(μm)、以及第二胶粘剂层的厚度d2(μm),计算d1/(d1+d2)的值。
(芯片接合薄膜与半导体晶片的180度剥离的剥离力)
根据JIS Z 0237测定各实施例中制作的第一胶粘剂层或第二胶粘剂层与半导体晶片的180度剥离的剥离力。即,首先,将粘合带(日东电工株式会社制,商品名:BT-315)粘贴在第一胶粘剂层或第二胶粘剂层上进行加衬。然后,切出长100mm×宽10mm的条状试样,并在50℃的热板上粘贴在半导体晶片的背面。粘贴中,将重2kg的辊往返一次,在常温环境下放置20分钟,制作试验片。然后,将粘贴的半导体晶片固定,在剥离角度180度、剥离速度300mm/分钟的条件下,使用拉伸试验机(岛津制作所,商品名:AGS-H)分别测定180度剥离的剥离力。
(焊线的接触评价)
首先,准备由阻焊剂(太阳油墨株式会社制,商品名:AUS308)覆盖、并且以双马来酰亚胺-三嗪为主成分的BGA衬底(丝焊用焊盘间距60μm)作为被粘物。
然后,在所述BGA衬底上使用第一胶粘剂层芯片接合半导体芯片。即,将各实施例中制作的第一胶粘剂层在温度40℃下粘贴到半导体芯片的背面。然后,在芯片接合温度150℃、接合压力0.1MPa、接合时间3秒的条件下,在BGA衬底上芯片接合半导体芯片。另外,作为所述半导体芯片,使用芯片尺寸5mm×5mm、厚度100μm的实施了铝蒸镀的芯片。芯片接合后,使用干燥机在120℃进行8小时热处理。由此,使第一胶粘剂层热固化。
然后,进行用于将BGA衬底的丝焊用焊盘与半导体芯片电连接的丝焊工序。作为丝焊装置,使用ASM公司制造的Eagle 60(商品名)。另外,丝焊条件是:超声波频率:120KHz、超声波输出时间:15毫秒、超声波输出功率:100mW、接合负荷:20gF、搜索负荷(サ一チ荷重):15gF。另外,焊线距半导体芯片表面的高度h(参考图5)为约60μm。
接着,在所述半导体芯片上芯片接合另一个半导体芯片。即,将各实施例中制作的芯片接合薄膜在温度40℃下粘贴到另一个半导体芯片的背面。此时,与另一个半导体芯片粘贴的面为第二胶粘剂层。然后,在芯片接合温度150℃、接合压力0.1MPa、芯片接合时间3秒的条件下,在BGA衬底上芯片接合半导体芯片。此时与BGA衬底粘贴的面为第一胶粘剂层。另外,作为所述半导体芯片及另一个半导体芯片,使用芯片尺寸5mm×5mm、厚度100μm的芯片。芯片接合后,使用干燥机在120℃进行8小时热处理。由此,使芯片接合薄膜热固化。
之后,为了确认焊线是否与另一个半导体芯片的背面接触,使用SEM观察剖面。未与另一个半导体芯片接触的情况评价为○、接触的情况评价为×。结果如下表1所示。
(焊线的埋入评价)
关于焊线在第一胶粘剂层中的埋入评价,通过与所述焊线的接触评价中进行的同样的方法,在BGA衬底上芯片接合半导体芯片后,使用各实施例中制作的芯片接合薄膜在所述半导体芯片上芯片接合另一个半导体芯片。之后,使用干燥机在120℃进行8小时热处理,使芯片接合薄膜热固化。
接着,为了确认焊线是否埋没在第一胶粘剂层中,使用SEM观察剖面。将焊线在第一胶粘剂层中不产生空隙而埋没的情况评价为○、未接触的情况或者产生空隙的情况评价为×。结果如下表1所示。
(拾取性)
将各实施例中制作的芯片接合薄膜与切割薄膜(日东电工株式会社制造,商品名:V-12S)以芯片接合薄膜中的第一胶粘剂层和切割薄膜中的粘合剂层为粘贴面的方式将两者粘贴。
接着,在40℃下使用辊将半导体晶片(直径8英寸、厚度200μm)压接在芯片接合薄膜的第二胶粘剂层上进行粘贴,再进行切割。另外,切割以得到8mm见方芯片尺寸的方式进行全切。
然后,从各切割/芯片接合薄膜的基材一侧以用针上推的方式拾取半导体芯片,进行拾取性的评价。具体而言,表示连续地拾取100个半导体芯片并在后述的条件下进行时的成功率。
<粘贴条件>
粘贴装置:日东精机制造,MA-3000II
粘贴速度计:10mm/分钟
粘贴压力:0.15MPa
粘贴时的平台温度:40℃
<切割条件>
切割装置:DFD6361(DISCO公司制造)
切割环:DTF 2-8-1(DISCO公司制造)
切割速度:50mm/秒
切割刀片:NBGZH-1030-27HCBB
切割刀片转速:45,000rpm
刀片高度:0.085mm
切割方式:A模式/阶梯式切割
芯片尺寸:8mm见方
<拾取条件>
拾取装置:商品名“SPA-300”株式会社新川制造
针数:9根
针上推量:500μm
针上推速度:5mm/秒
夹头保持时间:1秒
(玻璃化转变温度(Tg)的测定)
将各实施例中制作的第一胶粘剂层或第二胶粘剂层用裁切刀切出为长40mm、宽10mm的条状。然后,对这些试样使用固态粘弹性测定装置(RSA III,Rheometric Scientific公司制),在频率1Hz、升温速度10℃/分钟的条件下测定-50℃~300℃下的拉伸储能模量以及损耗模量。玻璃化转变温度通过读取该测定时的tan(δ)的峰值而得到。结果如下表1所示。
Claims (9)
1.一种芯片接合薄膜,用于在通过焊线与被粘物电连接的半导体元件上胶粘另一个半导体元件,其中,
至少由第一胶粘剂层和第二胶粘剂层层叠而形成,
所述第一胶粘剂层在压接时可以将所述焊线的一部分埋没而使其通过所述第一胶粘剂层的内部,
所述第二胶粘剂层用于防止所述另一个半导体元件与焊线接触,
所述第一胶粘剂层中的金属离子含量为100ppm以下,
所述第一胶粘剂层和第二胶粘剂层各自至少由环氧树脂、酚醛树脂和丙烯酸类树脂形成,
设所述环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类树脂的重量为Y重量份时,所述第一胶粘剂层的X/(X+Y)在0.5以上且0.95以下的范围内,所述第二胶粘剂层的X/(X+Y)在0.15以上且小于0.5的范围内。
2.如权利要求1所述的芯片接合薄膜,其中,
所述芯片接合薄膜的总厚度在40μm~120μm的范围内,
设所述第一胶粘剂层的厚度为d1μm、第二胶粘剂层的厚度为d2μm时,d1/(d1+d2)在0.6以上且0.95以下的范围内。
3.如权利要求1所述的芯片接合薄膜,其中,
所述第一胶粘剂层的热固化前的120℃下的剪切损耗模量G”在5×102Pa以上且1.5×104Pa以下的范围内,
所述第二胶粘剂层的热固化前的120℃下的剪切损耗模量G”在2×104Pa以上且1×106Pa以下的范围内。
4.如权利要求1所述的芯片接合薄膜,其中,
所述第二胶粘剂层、或者在该第二胶粘剂层上设置其它胶粘剂层时,该其它胶粘剂层中的至少任意一个中,含有染料或颜料中的至少任意一种。
5.如权利要求1所述的芯片接合薄膜,其中,
所述第一胶粘剂层的玻璃化转变温度为20℃~60℃,所述第二胶粘剂层的玻璃化转变温度为60℃以下。
6.如权利要求1所述的芯片接合薄膜,其中,
热固化后的175℃下的拉伸储能模量在0.5MPa以上且100MPa以下的范围内。
7.一种切割/芯片接合薄膜,其具有:
在基材上至少设置有粘合剂层的切割薄膜,和
设置在所述粘合剂层上的权利要求1所述的芯片接合薄膜。
8.由权利要求1所述的芯片接合薄膜制造的半导体装置。
9.由权利要求7所述的切割/芯片接合薄膜制造的半导体装置。
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