CN101645427A - 切割/芯片接合薄膜 - Google Patents
切割/芯片接合薄膜 Download PDFInfo
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- CN101645427A CN101645427A CN200910161129A CN200910161129A CN101645427A CN 101645427 A CN101645427 A CN 101645427A CN 200910161129 A CN200910161129 A CN 200910161129A CN 200910161129 A CN200910161129 A CN 200910161129A CN 101645427 A CN101645427 A CN 101645427A
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- bonding film
- die bonding
- dicing
- adhesive phase
- film
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Images
Classifications
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
本发明提供切割时的半导体晶片的保持力与拾取时的剥离性的平衡特性优良的切割/芯片接合薄膜。本发明涉及一种切割/芯片接合薄膜,具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜,其特征在于,所述粘合剂层由丙烯酸类粘合剂形成,所述丙烯酸类粘合剂由丙烯酸类聚合物和相对于所述丙烯酸类聚合物100重量份的比例在10~60重量份的范围内的分子内具有2个以上自由基反应性碳碳双键的化合物构成,所述丙烯酸类聚合物由丙烯酸酯、相对于丙烯酸酯100摩尔%的比例在10~40摩尔%范围内的含羟基单体和相对于含羟基单体100摩尔%的比例在70~90摩尔%范围内的分子内具有自由基反应性碳碳双键的异氰酸酯化合物构成,所述芯片接合薄膜由环氧树脂形成,并且层压在所述粘合剂层上。
Description
技术领域
本发明涉及将用于固着芯片状工件(半导体芯片等)与电极部件的胶粘剂在切割前粘贴在工件(半导体晶片等)上的状态下用于工件切割的切割/芯片接合薄膜、其制造方法及使用其的半导体装置的制造方法。
背景技术
形成电路图案的半导体晶片(工件)根据需要通过背面研磨调节厚度后,切割为半导体芯片(芯片状工件)(切割工序)。切割工序中,一般是为了除去切断层而在适度的液压(通常是约2kg/cm2)下清洗半导体芯片。然后,利用胶粘剂将所述半导体芯片固着到引线框等被粘物上(安装工序)后,移至接合工序。所述安装工序中,将胶粘剂涂布在引线框或半导体芯片上。但是,该方法中胶粘剂层的均匀化是困难的,另外胶粘剂的涂布需要特殊装置和长时间。因此,提出了在切割工序中保持半导体晶片胶粘的同时在安装工序中也提供必要的芯片固着用胶粘剂层的切割/芯片接合薄膜(例如,参照专利文献1)。
专利文献1中记载的切割/芯片接合薄膜,是在支撑基材上设置能够剥离的胶粘剂层的结构。即,在胶粘剂层的支撑下切割半导体晶片,然后拉伸支撑基材将半导体芯片与胶粘剂层一起剥离,将其分别回收,通过该胶粘剂层固着到引线框等被粘物上。
该种切割/芯片接合薄膜的胶粘剂层,为了不产生不能切割或尺寸错误,希望具有对半导体晶片的良好保持力以及能够将切割后的半导体芯片与胶粘剂层一体地从支撑基材上剥离的良好剥离性。但是,使这两个特性平衡绝不容易。特别是在象利用旋转圆刃等切割半导体晶片的方式等那样要求胶粘剂层具有高保持力的情况下,难以得到满足上述特性的切割/芯片接合薄膜。
因此,为了解决这样的问题,提出了各种改进方法(例如,参照专利文献2)。专利文献2中公开了如下方法:在支撑基材和胶粘剂层之间隔着可紫外线固化的粘合剂层,将其切割后进行紫外线固化,使粘合剂层与胶粘剂层之间的胶粘力下降,从而通过两者间的剥离使半导体芯片的拾取变得容易。
但是,通过该改进方法,有时也难以得到使切割时的保持力和之后的剥离性良好平衡的切割/芯片接合薄膜。例如,在10mm×10mm以上的大型半导体芯片或25~75μm的极薄半导体芯片的情况下,一般的芯片接合机不能容易地拾取半导体芯片。
针对这样的问题,下述专利文献3中公开了:通过向在粘合剂层中与半导体晶片粘贴部分对应的部分照射紫外线使该部分固化,由此提高拾取性。但是,如果是专利文献3记载的切割/芯片接合薄膜,则切割后的切断面上产生构成芯片接合薄膜的胶粘剂层的糊冒出的现象,因此有时产生切断面之间再附着(粘连)。结果,存在难以进行半导体芯片的拾取的问题。
专利文献1:日本特开昭60-57642号公报
专利文献2:日本特开平2-248064号公报
专利文献3:日本特开2005-5355号公报
发明内容
本发明鉴于上述问题而进行,其目的在于提供:具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜的切割/芯片接合薄膜,该切割/芯片接合薄膜即使在半导体晶片为薄型的情况下,切割该薄型半导体晶片时的保持力和将通过切割得到的半导体芯片与该芯片接合薄膜一体地剥离时的剥离性之间的平衡特性也优良;其制造方法;以及使用该切割/芯片接合薄膜的半导体装置的制造方法。
本发明人为了解决上述现有问题,对切割/芯片接合薄膜、其制造方法以及使用该切割/芯片接合薄膜的半导体装置的制造方法进行了研究。结果发现,如果是通过在紫外线照射前的粘合剂层上粘贴芯片接合薄膜而制作的切割/芯片接合薄膜,则在粘合剂层与芯片接合薄膜的界面处的密合性高并且锚固效应过度显现,结果,即使通过紫外线照射使粘合剂层固化后拾取半导体芯片,有时剥离也变得困难。
本发明的切割/芯片接合薄膜,为了解决上述问题,其具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜,其特征在于,所述粘合剂层由丙烯酸类粘合剂形成,所述丙烯酸类粘合剂由丙烯酸类聚合物和相对于所述丙烯酸类聚合物100重量份的比例在10~60重量份的范围内的分子内具有2个以上自由基反应性碳碳双键的化合物构成,所述丙烯酸类聚合物由丙烯酸酯、相对于丙烯酸酯100摩尔%的比例在10~40摩尔%范围内的含羟基单体和相对于含羟基单体100摩尔%的比例在70~90摩尔%范围内的分子内具有自由基反应性碳碳双键的异氰酸酯化合物构成,所述芯片接合薄膜由环氧树脂形成,并且层压在所述粘合剂层上。
所述粘合剂层中使用丙烯酸酯作为主单体,因此可以实现剥离力的减小、实现良好的拾取性。另外,通过使含羟基单体相对于丙烯酸酯100摩尔%的配合比例为10摩尔%以上,可以抑制紫外线照射后的交联不足。结果,例如对于切割时粘贴在粘合剂层上的切割环,可以防止胶糊残留的产生。另一方面,通过使所述配合比例为40摩尔%以下,可以防止由紫外线照射引起的交联过度进行从而剥离困难并且拾取性下降的情况。另外,也可以防止与一部分聚合物的凝胶化相伴随的生产率下降。
另外,本发明中,由于使用分子内具有自由基反应性碳碳双键的异氰酸酯化合物、并且以相对于所述丙烯酸类聚合物100重量份为10~60重量份的比例配合分子内具有2个以上自由基反应性碳碳双键的化合物,因此可以将紫外线照射后的拉伸弹性模量(23℃)调节至适度范围内。
另外,所述芯片接合薄膜由环氧树脂形成,因此例如即使通过切割与半导体晶片一起切断,也可以防止在其切断面上产生构成芯片接合薄膜的胶粘剂层糊冒出。由此,可以防止切断面之间再附着(粘连),可以进一步提高半导体芯片的拾取性。
所述芯片接合薄膜优选层压在紫外线照射后的粘合剂层上。如果是所述构成,则粘合剂层表面硬,可以减小与芯片接合薄膜粘贴时两者的密合度。由此,可以减小粘合剂层与芯片接合薄膜间的锚固效果,例如拾取半导体芯片时,粘合剂层与芯片接合薄膜间的剥离性良好。结果,可以实现拾取性的提高。另外,利用紫外线照射使粘合剂层固化时,通过形成交联结构而使得粘合剂层的体积缩小。因此,例如在与芯片接合薄膜粘贴后对粘合剂层照射紫外线使其固化时,对芯片接合薄膜施加应力。结果,有时切割/芯片接合薄膜整体产生翘曲。但是,本发明的切割/芯片接合薄膜,由于是在通过紫外线照射固化后与芯片接合薄膜粘贴而形成的,因此可以防止对芯片接合薄膜施加不需要的应力。结果,可以得到无翘曲的切割/芯片接合薄膜。
所述粘合剂层的紫外线照射后的23℃下的拉伸弹性模量优选在40~170MPa范围内。由此,例如即使对于10mm×10mm以上的大型半导体芯片或25~75μm的极薄半导体芯片,也可以抑制切割时的芯片飞散,同时拾取性提高。
所述紫外线照射时的积分光量优选在30~1000mJ/cm2的范围内。通过使紫外线照射时的积分光量为30mJ/cm2以上,粘合剂层充分固化,可以防止与芯片接合薄膜过度密合。结果,可以实现良好的拾取性,可以防止拾取后粘合剂附着在芯片接合薄膜上(所谓的胶糊残留)。另一方面,通过使紫外线照射时的积分光量为1000mJ/cm2以下,可以减少对基材的热损害。另外,粘合剂层的固化不会过度进行而使拉伸弹性模量变得过大,可以防止扩展性下降。另外,可以防止粘合力过低,由此在工件的切割时,可以防止芯片飞散的产生。
所述构成中,所述丙烯酸酯优选以相对于丙烯酸酯总量100摩尔%为50~91摩尔%的比例包含由CH2=CHCOOR(式中,R为碳原子数6~10的烷基)表示的丙烯酸酯A。通过包含由CH2=CHCOOR(式中,R为碳原子数6~10的烷基)表示的丙烯酸酯A,可以防止剥离力变得过大从而拾取性下降。另外,通过使丙烯酸酯A的配合比例相对于丙烯酸酯总量100摩尔%为50~91摩尔%,可以防止剥离力变得过大从而拾取性下降,同时可以防止粘合性过度下降从而切割时产生芯片飞散。
所述含羟基单体优选为选自由(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基十二烷酯和(甲基)丙烯酸(4-羟甲基环己基)甲酯组成的组中的至少任意一种。
另外,所述具有自由基反应性碳碳双键的异氰酸酯化合物,优选为选自2-甲基丙烯酰氧乙基异氰酸酯或者2-丙烯酰氧乙基异氰酸酯的至少任意一种。
另外,所述聚合物的重均分子量优选在35万至100万的范围内。通过使重均分子量为35万以上,可以防止低分子量聚合物的比例减少,由此,可以防止例如切割时从在粘合剂层上粘贴的切割环上产生剥离。另外,由于可以防止紫外线照射后的交联不足,因此在从粘合剂层上剥离切割环时,可以防止产生胶糊残留。另一方面,通过使重均分子量为100万以下,可以提高在基材上形成粘合剂层时的作业性。粘合剂层的形成,例如可以通过在基材上涂布含有所述丙烯酸类聚合物的粘合剂组合物的溶液后干燥来进行,如果丙烯酸类聚合物的重均分子量超过100万,则粘合剂组合物溶液的粘度过大,因此该丙烯酸类聚合物的聚合以及涂布时的作业性降低。
另外,在温度23℃、剥离角度15度、剥离速度300mm/分钟的条件下从所述芯片接合薄膜上剥离切割薄膜时的、切割薄膜对于所述芯片接合薄膜的剥离粘合力优选在0.5~0.8N/10mm的范围内。通过使切割薄膜对于所述芯片接合薄膜的剥离粘合力在所述数值范围内,可以防止切割时产生芯片飞散,同时可以抑制切割薄膜与芯片接合薄膜过度胶粘,从而使半导体芯片的拾取性良好。
构成所述粘合剂层的丙烯酸类聚合物优选不包含丙烯酸作为单体成分。由此,可以防止粘合剂层与芯片接合薄膜的反应或相互作用,可以进一步提高拾取性。
另外,本发明的切割/芯片接合薄膜的制造方法,为了解决前述问题,所述切割/芯片接合薄膜具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜,其特征在于包括:通过丙烯酸类粘合剂在所述基材上形成粘合剂层前体的工序,所述丙烯酸类粘合剂由丙烯酸类聚合物和相对于所述丙烯酸类聚合物100重量份的比例在10~60重量份的范围内的分子内具有2个以上自由基反应性碳碳双键的化合物构成,所述丙烯酸类聚合物由丙烯酸酯、相对于丙烯酸酯100摩尔%的比例在10~40摩尔%范围内的含羟基单体和相对于含羟基单体100摩尔%的比例在70~90摩尔%范围内的分子内具有自由基反应性碳碳双键的异氰酸酯化合物构成;和在所述粘合剂层前体上层压所述芯片接合薄膜的工序。
作为粘合剂层的构成材料,使用丙烯酸酯作为主单体,因此可以实现粘合力的下降,实现良好的拾取性。另外,通过使含羟基单体相对于丙烯酸酯总量的比例为10摩尔%以上,可以抑制紫外线照射后的交联不足。结果,例如即使在切割时对于在粘合剂层上粘贴的切割环,也可以防止胶糊残留的产生。另一方面,通过使含羟基单体相对于丙烯酸酯总量的比例为40摩尔%以下,可以防止由紫外线照射引起的交联过度进行从而剥离困难、拾取性下降的情况。另外,也可以防止与一部分聚合物的凝胶化相伴随的生产率下降。
另外,本发明中,由于使用分子内具有自由基反应性碳碳双键的异氰酸酯化合物、并且以相对于所述丙烯酸类聚合物100重量份为10~60重量份的比例配合分子内具有2个以上自由基反应性碳碳双键的化合物,因此可以将紫外线照射后的拉伸弹性模量(23℃)调节至适度范围内。结果,例如即使对于10mm×10mm以上的大型半导体芯片或25~75μm的极薄半导体芯片,也可以得到抑制切割时芯片飞散的产生、同时拾取性优良的切割/芯片接合薄膜。
另外,所述方法中,使用环氧树脂作为芯片接合薄膜的构成材料,因此可以形成如下芯片接合薄膜:例如半导体晶片的切割时,即使半导体晶片与芯片接合薄膜被切断,也可以防止在其切断面上产生胶粘剂的胶糊冒出。结果,可以防止芯片接合薄膜的切断面之间再附着(粘连),由此可以制作拾取性优良的切割/芯片接合薄膜。
另外,在上述方法中,在所述层压芯片接合薄膜的工序之前,优选包括对所述粘合剂层前体照射紫外线而形成所述粘合剂层的工序。
由此,粘合剂层是在芯片接合薄膜粘贴前通过紫外线照射预先固化而形成的,因此其表面硬,成为对凹凸的密合性下降的状态。由于通过在这样的粘合剂层上粘贴芯片接合薄膜来制作切割/芯片接合薄膜,因此,粘合剂层与芯片接合薄膜之间的密合性下降,使锚固效果减少。结果,例如在拾取半导体芯片时,粘合剂层与芯片接合薄膜之间的剥离性优良,得到显示良好拾取性的切割/芯片接合薄膜。另外,利用紫外线照射使粘合剂层固化时,通过形成交联结构而使粘合剂层的体积缩小。因此,例如在与芯片接合薄膜粘贴后对粘合剂层照射紫外线使其固化时,对芯片接合薄膜施加应力。结果,有时切割/芯片接合薄膜整体产生翘曲。但是,本发明的切割/芯片接合薄膜,由于是在通过紫外线照射进行固化后与芯片接合薄膜粘贴而形成的,因此可以防止对芯片接合薄膜施加不需要的应力。结果,可以得到无翘曲的切割/芯片接合薄膜。
所述紫外线照射优选在30~1000mJ/cm2的范围内进行。通过使紫外线的照射为30mJ/cm2以上,粘合剂层充分固化,可以防止与芯片接合薄膜过度密合。结果,可以实现良好的拾取性,可以防止拾取后粘合剂附着在芯片接合薄膜上(所谓的胶糊残留)。另一方面,通过使紫外线的照射为1000mJ/cm2以下,可以减少对基材的热损害。另外,粘合剂层的固化不会过度进行从而拉伸弹性模量变得过大,可以防止扩展性下降。另外,可以防止粘合力过低,由此在工件的切割时,可以防止芯片飞散的产生。
另外,本发明的半导体装置的制造方法,为了解决所述问题,该方法使用具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜的切割/芯片接合薄膜,其特征在于,包括以下工序:准备权利要求1至10所述的切割/芯片接合薄膜,并在所述芯片接合薄膜上压接半导体晶片的工序;通过将所述半导体晶片与所述芯片接合薄膜一起切割而形成半导体芯片的工序;和将所述半导体芯片与所述芯片接合薄膜一起从所述粘合剂层上剥离的工序。
所述方法中,由于使用可以防止在半导体切割时半导体芯片的芯片飞散的同时拾取性也优良的切割/芯片接合薄膜,因此例如即使是在10mm×10mm以上的大型半导体芯片或25~75μm的极薄半导体芯片的情况下,也可以将半导体芯片与芯片接合薄膜一起从切割薄膜上容易地剥离。即,根据所述方法,可以提高成品率来制造半导体装置。
另外,在所述方法中,由于采用具备使用环氧树脂作为构成材料的芯片接合薄膜的切割/芯片接合薄膜,因此,例如即使是半导体晶片的切割时,也可以防止在芯片接合薄膜的切断面上胶粘剂的胶糊冒出而造成切断面相互之间的再附着(粘连)。结果,可以使半导体芯片的剥离更加容易,可以提高成品率。
所述方法中,在从所述半导体晶片的压接工序直至半导体芯片的剥离工序,优选未对所述粘合剂层照射紫外线。
另外,所述方法中,在拾取前不需要对粘合剂层照射紫外线。结果,与以往的半导体装置的制造方法相比可以减少工序数。另外,即使是在半导体晶片具有预定的电路图案的情况下,也可以防止由紫外线照射造成的电路图案产生缺陷。结果,可以制造可靠性高的半导体装置。
附图说明
图1是表示本发明的实施方式之一的切割/芯片接合薄膜的剖面示意图。
图2是表示本发明的另一实施方式的切割/芯片接合薄膜的剖面示意图。
图3是表示通过所述切割/芯片接合薄膜中的芯片接合薄膜安装半导体芯片的例子的剖面示意图。
符号说明
1基材
2粘合剂层
3芯片接合薄膜
4半导体晶片
5半导体芯片
6被粘物
7焊线
8密封树脂
9垫片
10、11切割/芯片接合薄膜
具体实施方式
(切割/芯片接合薄膜)
关于本发明的实施方式,参照图1和图2进行说明。图1是表示本实施方式中的切割/芯片接合薄膜的剖面示意图。图2是表示本实施方式中另一个切割/芯片接合薄膜的剖面示意图。其中,不需说明的部分省略,并且为了容易说明而具有扩大或者缩小等进行图示的部分。
如图1所示,切割/芯片接合薄膜10为具有在基材1上设有粘合剂层2的切割薄膜和在该粘合剂层2上具有芯片接合薄膜3的结构。另外,本发明如图2所示,也可以是仅半导体晶片粘贴部分2a上形成芯片接合薄膜3’的构成。
所述基材1具有紫外线透过性,并且作为切割/芯片接合薄膜10、11的强度母体。例如可以列举:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-醋酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏氯乙烯、纤维素类树脂、有机硅树脂、金属(箔)、纸等。
另外,作为基材1的材料,可以列举所述树脂的交联物等聚合物。所述塑料薄膜可以不拉伸使用,根据需要也可以进行单轴或双轴拉伸处理后使用。利用经拉伸处理等而赋予了热收缩性的树脂片,切割后通过使其基材1热收缩,能够降低粘合剂层2与芯片接合薄膜3、3’的胶粘面积,从而容易回收半导体芯片。
为了提高与邻接层的密合性和保持性等,基材1的表面可以进行常规表面处理,例如铬酸处理、臭氧暴露、火焰暴露、高压电压暴露、离子化放射线处理等化学或物理处理、利用底涂剂(例如,后述的粘合物质)的涂布处理。
所述基材1,可以适当选择使用同种或异种材料,根据需要也可以将多种混合使用。另外,为了对基材1赋予防静电性能,可以在所述基材1上设置包含金属、合金、它们的氧化物等的厚度约30~约的导电性物质的蒸镀层。基材1可以是单层也可以是2种以上的多层。
基材1的厚度没有特别限制,可以适当设定,一般为约5~约200μm。
所述粘合剂层2通过紫外线固化型粘合剂形成。粘合剂层2在粘贴芯片接合薄膜3、3’前可以不固化,但是优选预先通过紫外线照射而固化。固化的部分不必是粘合剂层2的全部区域,粘合剂层2的至少与半导体晶片粘贴部分3a对应的部分2a固化即可(参照图1)。粘合剂层2在与芯片接合薄膜3粘贴前通过紫外线照射而固化时,将其表面在硬的状态下与芯片接合薄膜3粘贴,因此可以抑制在粘合剂层2与芯片接合薄膜3的界面处密合性过度增大。由此,可以减少粘合剂层2与芯片接合薄膜3之间的锚固效果,提高剥离性。
另外,可以预先根据图2所示的芯片接合薄膜3’的形状使紫外线固化型粘合剂层2固化。由此,可以抑制在粘合剂层2与芯片接合薄膜3的界面处密合性过度增大。结果,具有拾取时芯片接合薄膜3’容易从粘合剂层2上剥离的性质。另一方面,粘合剂层2的其它部分2b由于未照射紫外线因此未固化,粘合力比所述部分2a大。由此,在其它部分2b上粘贴切割环12时,可以将切割环12可靠地胶粘固定。
如前所述,图1所示的切割/芯片接合薄膜10的粘合剂层2中,由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合薄膜3粘合,能够确保切割时的保持力。这样,紫外线固化型粘合剂能够以良好的胶粘/剥离平衡来支撑用于将半导体芯片固着到衬底等被粘物上的芯片接合薄膜3。图2所示的切割/芯片接合薄膜11的粘合剂层2中,所述部分2b可以固定切割环。切割环例如可以使用由不锈钢等金属制成的切割环或树脂制成的切割环。
在将半导体晶片与芯片接合薄膜3粘贴时的切割/芯片接合薄膜10中,优选进行如下设计:粘合剂层2中所述部分2a对半导体晶片粘贴部分3a的粘合力小于所述其它部分2b对与半导体晶片粘贴部分3a不同的部分3b的粘合力。在常温(23℃)、剥离角度15度、剥离速度300mm/分钟的条件下所述部分2a的剥离粘合力,从晶片的固定保持力或形成的芯片的回收性等观点考虑优选为0.5~0.8N/10mm。所述粘合力如果小于0.5N/10mm,则与半导体芯片的胶粘固定不充分,因此在切割时有时产生芯片飞散。另外,所述粘合力如果超过0.8N/10mm,则粘合剂层2过度地胶粘芯片接合薄膜3,因此有时难以拾取半导体芯片。另一方面,所述其它部分2b的粘合力优选为0.5~10N/10mm、更优选1~5N/10mm。即使所述部分2a的粘合力低,利用所述其它部分2b的粘合力也可以抑制芯片飞散等的发生,并且可以发挥晶片加工所需的保持力。
在切割/芯片接合薄膜11中,优选进行如下设计:粘合剂层2中所述部分2a对半导体晶片粘贴部分3a的粘合力小于所述其它部分2b对切割环12的粘合力。所述部分2a对半导体晶片粘贴部分3a的剥离粘合力(常温(23℃)、剥离角度15度、剥离速度300mm/分钟)与上述同样优选为0.5~0.8N/10mm。另一方面,所述其它部分2b对切割环12的粘合力优选为0.05~10N/10mm、更优选0.1~5N/10mm。即使所述部分2a的剥离粘合力低,利用所述其它部分2b的粘合力也可以抑制芯片飞散等的发生,并且可以发挥对晶片加工充分的保持力。另外,这些粘合力基于常温(23℃)、剥离角度15度、拉伸(剥离)速度300mm/分钟条件下的测定值。
另外,在切割/芯片接合薄膜10、11中,优选进行如下设计:半导体晶片粘贴部分3a对半导体晶片的粘合力大于该粘贴部分3a对所述部分2a的粘合力。对半导体晶片的粘合力可以根据其种类适当调节。半导体晶片粘贴部分3a对所述部分2a的粘合力(常温(23℃)、剥离角度15度、剥离速度300mm/分钟)优选为0.05~10N/10mm、更优选1~5N/10mm。另一方面,半导体晶片粘贴部分3a对半导体晶片的粘合力(常温(23℃)、剥离角度15度、剥离速度300mm/分钟),从切割时、拾取时、芯片接合时的可靠性、拾取性的观点考虑,优选为0.5~15N/10mm以下、更优选1~15N/10mm。
在此,设半导体晶片4的直径为r1、粘合剂层2中所述部分2a的直径为r2、芯片接合薄膜3中半导体晶片粘贴部分3a(或者芯片接合薄膜3’)的直径为r3时,优选满足r1<r2<r3的关系。由此,可以将半导体晶片4的整个面胶粘固定在芯片接合薄膜3、3’上,同时,可以将半导体晶片粘贴部分3a(或者芯片接合薄膜3’)的边缘部胶粘固定在所述其它部分2b上。所述其它部分2b的粘合力大于所述部分2a,因此在所述边缘部可以胶粘固定半导体晶片粘贴部分3a(或者芯片接合薄膜3’)。结果,切割时可以进一步防止芯片飞散的发生。
所述紫外线固化型粘合剂是使用在聚合物侧链或主链中或者主链末端具有自由基反应性碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂不需要含有或者大部分不含有作为低分子量成分的低聚物成分等,因此低聚物成分不会随时间而在粘合剂中移动,可以形成稳定层结构的粘合剂层。
本发明中,作为所述丙烯酸类聚合物,可以列举使用丙烯酸酯作为主单体成分的丙烯酸类聚合物。作为所述丙烯酸酯,可以列举例如:丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、异壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯、二十二烷酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链或支链状烷基酯等)及丙烯酸环烷酯(例如,环戊酯、环己酯等)等。这些单体可以单独使用或者两种以上组合使用。
前述例示的丙烯酸酯中,在本发明中优选使用以化学式CH2=CHCOOR(式中,R为碳原子数6~10、更优选碳原子数8~9的烷基)表示的单体(丙烯酸酯A)。碳原子数如果为6以上,则可以抑制剥离力变得过大,可以防止拾取性下降。另一方面,碳原子数如果为10以下,则可以抑制与芯片接合薄膜的胶粘性的下降,结果,可以防止切割时产生芯片飞散。另外,丙烯酸酯由化学式CH2=CHCOOR表示时,其配合比例相对于丙烯酸类聚合物的丙烯酸酯100摩尔%优选为50~91摩尔%、更优选80~87摩尔%。配合比例如果小于50摩尔%,则剥离力变得过大,有时拾取性下降。另一方面,如果超过91摩尔%,则粘合性下降,有时切割时产生芯片飞散。另外,所述化学式表示的单体中,特别优选丙烯酸-2-乙基己酯、丙烯酸异辛酯、丙烯酸异壬酯。
所述丙烯酸类聚合物含有能够与所述丙烯酸酯共聚的含羟基单体作为必须成分。作为含羟基单体,可以列举例如:(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸-(4-羟甲基环己基)甲酯等。所述含羟基单体可以单独使用或者两种以上组合使用。
所述含羟基单体的配合比例,相对于丙烯酸酯100摩尔%优选在10~40摩尔%的范围内,更优选在15~30摩尔%的范围内。配合比例如果小于10摩尔%,则紫外线照射后交联不足,有时拾取性下降。另一方面,如果配合比例超过40摩尔%,则粘合剂的极性变高,与芯片接合薄膜的相互作用变高,由此剥离困难。
所述丙烯酸类聚合物,为了改善凝聚力和耐热性等,根据需要可以含有与能够与所述丙烯酸烷基酯共聚的其它单体成分对应的单元。作为这样的单体成分,可以列举例如:甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸异丙酯、甲基丙烯酸丁酯、甲基丙烯酸异丁酯、甲基丙烯酸叔丁酯、甲基丙烯酸仲丁酯、甲基丙烯酸戊酯等甲基丙烯酸烷基酯;丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、丁烯酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸单体;丙烯酰磷酸-2-羟基乙酯等含磷酸基单体;丙烯酰胺;丙烯腈;甲基丙烯酸环烷酯等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。但是,所述含羧基单体的情况下,通过该羧基与芯片接合薄膜3中的环氧树脂中的环氧基反应,粘合剂层2与芯片接合薄膜3的边界面消失,有时两者的剥离性下降。因此,含羧基单体的使用量优选为全部单体成分的0~3重量%以下。另外,这些单体成分中,优选构成本发明的粘合剂层2的丙烯酸类聚合物不含丙烯酸作为单体成分。这是因为:有时丙烯酸物质扩散到芯片接合薄膜3中,使粘合剂层2与芯片接合薄膜3的边界面消失,使剥离性下降。
另外,所述丙烯酸类聚合物中,使用分子内具有自由基反应性碳碳双键的异氰酸酯化合物作为必须成分。作为所述异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、2-丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。
所述分子内具有自由基反应性碳碳双键的异氰酸酯化合物的配合比例,相对于含羟基单体100摩尔%优选在70~90摩尔%的范围内,更优选在75~85摩尔%的范围内。配合比例如果低于70摩尔%,则有时紫外线照射后的交联不足,拾取性下降。另一方面,配合比例如果超过90摩尔%,则粘合剂的极性变高,与芯片接合薄膜的相互作用变高,由此剥离困难,拾取性下降。
所述丙烯酸类聚合物可以通过将所述单体混合物聚合而得到。聚合可以以溶液聚合、乳化聚合、本体聚合、悬浮聚合等任意方式进行。从防止污染洁净的被粘物等方面考虑,优选低分子量物质的含量小。从该观点考虑,丙烯酸类聚合物的重均分子量优选为约35万至约100万、更优选约45万至约80万。重均分子量的测定通过GPC(凝胶渗透色谱法)进行,是通过聚苯乙烯换算而算出的值。
另外,为了调节紫外线照射前的粘合力或者紫外线照射后的粘合力,所述粘合剂中也可以适当使用外部交联剂。作为外部交联方法的具体手段,可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂进行反应的方法。使用外部交联剂的情况下,其使用量根据与要交联的基础聚合物的平衡以及作为粘合剂的使用用途来进行适当确定。一般相对于所述基础聚合物100重量份优选配合约20重量份以下、更优选0.1~10重量份。另外,粘合剂中根据需要除所述成分之外还可以使用以往公知的各种增粘剂、抗老化剂等添加剂。
作为配合的分子内具有两个以上自由基反应性碳碳双键的化合物成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等单体。另外,也可以列举所述异氰酸酯化合物。另外,可以列举氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种紫外线固化性的低聚物,其分子量在约100至约30000的范围内是适当的。另外,分子内具有两个以上自由基反应性碳碳双键的化合物的配合比例,相对于构成粘合剂的丙烯酸类聚合物100重量份为约10至约60重量份,优选为约20至约50重量份,更优选约30至约45重量份。配合比例如果低于10重量份,则紫外线照射后的交联不充分,拉伸弹性模量下降。结果,在半导体晶片切割时对于在粘合剂层上粘贴的切割环产生胶糊残留,在半导体芯片的拾取时剥离力过度增大从而拾取性下降。另一方面,配合比例如果超过60重量份,则拉伸弹性模量变高。结果,切割时产生芯片飞散。
在所述丙烯酸类聚合物中引入自由基反应性碳碳双键的方法没有特别限制,可以采用各种方法,从分子设计方面考虑,在聚合物侧链中引入自由基反应性碳碳双键是比较容易的。例如可以列举下述方法:预先将具有羟基的单体与丙烯酸类聚合物共聚后,使具有能够与该羟基反应的异氰酸酯基及自由基反应性碳碳双键的异氰酸酯化合物在保持自由基反应性碳碳双键的紫外线固化性的状态下进行缩合或加成反应。作为具有异氰酸酯基及自由基反应性碳碳双键的异氰酸酯化合物,可以列举上述例示的异氰酸酯化合物。
所述内在型的紫外线固化型粘合剂,可以单独使用所述具有自由基反应性碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合所述紫外线固化性单体成分或低聚物成分。
所述紫外线固化型粘合剂中优选含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1-酮等苯乙酮类化合物;苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物;苯偶酰二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯基-1,2-丙二酮-2-(o-乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤化酮;酰基氧化膦;酰基膦酸酯等。光聚合引发剂的配合量,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份例如为约0.05至约20重量份。
在切割/芯片接合薄膜10的粘合剂层2中,可以对粘合剂层2的一部分进行紫外线照射使得所述部分2a的粘合力<其它部分2b的粘合力。即,使用基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或者一部分被遮光的基材,在其上形成紫外线固化型粘合剂层2后进行紫外线照射,使与半导体晶片粘贴部分3a对应的部分固化,可以形成使粘合力下降的所述部分2a。作为遮光材料,可以通过印刷或蒸镀等在支撑薄膜上制作能够形成光掩模的遮光材料。
另外,紫外线照射时因氧而产生固化障碍时,优选从紫外线固化型粘合剂层2的表面遮断氧(空气)。作为该方法,可以列举例如:用隔膜被覆粘合剂层2的表面的方法、或者在氮气环境中进行紫外线等的紫外线照射的方法等。
粘合剂层2的厚度没有特别限制,从防止芯片切断面的缺陷或者芯片接合薄膜3的固定保持的兼具性等方面考虑,优选为约1至约50μm。优选2~30μm、更优选5~25μm。
芯片接合薄膜3例如可以仅由胶粘剂层单层构成。另外,也可以形成将玻璃化转变温度不同的热塑性树脂、热固化温度不同的热固性树脂适当组合的两层以上的多层结构。另外,由于在半导体晶片的切割工序中使用切削水,因此芯片接合薄膜3吸湿,有时含水率达到常态以上。如果以这样的高含水率直接胶粘在衬底等上,则有时在后固化阶段胶粘界面处滞留水蒸汽,而产生隆起。因此,作为芯片胶粘用胶粘剂,通过形成用芯片胶粘剂夹着高透湿性的芯材的结构,在后固化阶段水蒸汽透过薄膜而扩散,从而可以避免所述问题。从这样的观点考虑,可以形成在芯片接合薄膜3的芯材的单面或双面上形成胶粘剂层的多层结构。
作为所述芯材,可以列举:薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
本发明的芯片接合薄膜3,以环氧树脂作为主成分而形成。环氧树脂中使半导体元件腐蚀的离子性杂质等含量少,因此优选。作为所述环氧树脂,只要是作为胶粘剂组合物通常使用的即可,没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四苯酚基乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或者缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂或四苯酚基乙烷型环氧树脂。这是因为:这些环氧树脂与作为固化剂的酚树脂的反应性好,并且耐热性等优良。
另外,芯片接合薄膜3根据需要可以适当组合使用其它热固性树脂或热塑性树脂。作为所述热固性树脂,可以列举:酚树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、聚硅氧烷树脂、或者热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。另外,作为环氧树脂的固化剂优选酚树脂。
另外,所述酚树脂作为所述环氧树脂的固化剂起作用,可以列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚树脂、甲阶酚醛树脂型酚树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚树脂可以单独使用或者两种以上组合使用。这些酚树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚树脂的配合比例,例如以所述环氧树脂成分中的环氧基每1当量酚树脂中的羟基为0.5~2.0当量的方式进行配合是适当的。更优选为0.8~1.2当量。即,这是因为:两者的配合比例如果在所述范围以外,则固化反应不充分,环氧树脂固化物的特性容易变差。
作为所述热塑性树脂,可以列举:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、6-尼龙或6,6-尼龙等聚酰胺树脂、苯氧基树脂、丙烯酸系树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中,特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸系树脂。
作为所述丙烯酸系树脂,没有特别限制,可以列举:以一种或两种以上具有碳原子数30以下、特别是碳原子数4~18的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯为成分的聚合物等。作为所述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者十二烷基等。
另外,作为形成所述聚合物的其它单体,没有特别限制,可以列举例如:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或丁烯酸等含羧基单体;马来酸酐或衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙烷磺酸、(甲基)丙烯酰胺丙烷磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;或者丙烯酰磷酸-2-羟基乙酯等含磷酸基单体。
芯片接合薄膜3的胶粘剂层中,为了预先具有某种程度的交联,在制作时优选添加与聚合物的分子链末端的官能团等反应的多官能性化合物作为交联剂。由此,可以提高高温下的胶粘特性、改善耐热性。
另外,芯片接合薄膜3的胶粘剂层中根据需要可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。作为所述阻燃剂,可以列举例如:三氧化锑、五氧化锑、溴化环氧树脂等。这些物质可以单独使用或者两种以上组合使用。作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
芯片接合薄膜3的厚度没有特别限制,例如为约5至约100μm、优选约5至约50μm。
可以使切割/芯片接合薄膜10、11具有防静电能力。由此,可以防止其胶粘时及剥离时等静电的产生或者电路因由于静电导致的半导体晶片带电而遭破坏等。防静电能力的赋予,可以通过在基材1、粘合剂层2或者芯片接合薄膜3中添加防静电剂或导电性物质的方法、在基材1上附设由电荷移动络合物或金属膜等形成的导电层等适宜的方式进行。作为这些方式,优选难以产生有可能使半导体晶片变质的杂质离子的方式。作为为了导电性的赋予、导热性的提高等而配合的导电物质(导电填料),可以列举:银、铝、金、铜、镍、导电合金等的球状、针状、片状金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。但是,从能够不漏电的观点考虑,优选所述芯片接合薄膜3、3’为非导电性。
所述切割/芯片接合薄膜10、11的芯片接合薄膜3、3’优选由隔膜保护(未图示)。隔膜具有在供实际应用之前作为保护芯片接合薄膜3、3’的保护材料的功能。另外,隔膜还可以作为向粘合剂层2上转印芯片接合薄膜3、3’时的支撑基材使用。隔膜在向切割/芯片接合薄膜的芯片接合膜3、3’上粘贴半导体晶片时剥离。作为隔膜,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或由含氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行了表面涂布后的塑料薄膜或纸等。
(切割/芯片接合薄膜的制造方法)
以下,以切割/芯片接合薄膜10为例对本发明的切割/芯片接合薄膜的制造方法进行说明。首先,基材1可以通过以往公知的制膜方法制成膜。作为该制膜方法,可以列举例如:压延制膜法、有机溶剂中的流延法、密闭体系的挤压吹塑法、T形模头挤出法、共挤出法、干式层压法等。
然后,在基材1上涂布粘合剂组合物形成涂膜后,在预定条件下使该涂膜干燥(根据需要进行加热交联),形成粘合剂层前体。作为涂布方法,没有特别限制,可以列举例如:辊涂、丝网涂布、凹版涂布等。另外,作为干燥条件可以根据涂膜的厚度或材料等进行各种设定。具体而言,例如,在干燥温度80~150℃、干燥时间0.5~5分钟的范围内进行。另外,可以在隔膜上涂布粘合剂组合物形成涂膜后,在所述干燥条件下使涂膜干燥而形成粘合剂层前体。之后,将粘合剂层前体转印到基材1上。对这样形成的粘合剂层前体进行紫外线照射,由此形成粘合剂层2。作为紫外线的照射条件,其积分光量优选在30~1000mJ/cm2的范围内、更优选在100~500mJ/cm2的范围内。紫外线照射如果不足30mJ/cm2则有时粘合剂层的固化不充分。结果,与芯片接合薄膜的密合性增大,导致拾取性下降。另外,拾取后在芯片接合薄膜上产生胶糊残留。另一方面,紫外线照射如果超过1000mJ/cm2则有时对基材产生热损害。另外,粘合剂层的固化过度进行而使拉伸弹性模量过大,扩展性下降。另外,粘合力过度下降,由此在半导体晶片的切割时,有时产生芯片飞散。
然后,将用于形成芯片接合薄膜3的形成材料涂布到剥离纸上至预定厚度,进一步在预定条件下干燥而形成芯片接合薄膜3。将该芯片接合薄膜3转印到所述粘合剂层2上,由此形成切割/芯片接合薄膜。通过以上方法,可以得到本发明的切割/芯片接合薄膜10。
(半导体装置的制造方法)
关于使用本发明的切割/芯片接合薄膜11的半导体装置的制造方法,参照图3进行说明。
首先,将半导体晶片4压接在切割/芯片接合薄膜11中的芯片接合薄膜3’上,并将其胶粘保持而固定(安装工序)。本工序在用压接辊等挤压工具挤压的同时进行。
然后,进行半导体晶片4的切割。由此,将半导体晶片4切割为预定的尺寸而小片化,形成半导体芯片5。切割例如可以从半导体晶片4的电路面一侧按照常规方法进行。另外,本工序中,例如可以采用完全切入至芯片接合薄膜3的、称为全切的切割方式等。由于芯片接合薄膜3由环氧树脂形成,因此即使通过切割而切断,也可以防止在该切断面上产生胶粘剂的胶糊冒出。结果,防止切断面之间再附着(粘连),可以更好地进行后述的拾取。本工序中使用的切割装置没有特别限制,可以使用现有公知的切割装置。另外,半导体晶片4由于利用芯片接合薄膜3进行胶粘固定,因此可以抑制芯片缺陷或芯片飞散,同时也可以抑制半导体晶片4的破损。另外,即使是通过切割进行切入至粘合剂层2的情况下,如果粘合剂层2通过紫外线照射而固化,则也可以防止丝屑等的产生。
然后,进行切割/芯片接合薄膜11的扩展。扩展使用现有公知的扩展装置进行。扩展装置具有可以通过切割环将切割/芯片接合薄膜11向下方下推的甜甜圈(donuts)状外环和直径比该外环小用于支撑切割/芯片接合薄膜11的内环。切割/芯片接合薄膜11中,在粘贴芯片接合薄膜3’之前进行紫外线照射时,仅粘合剂层2的所述部分2a通过紫外线照射而固化,其它部分2b未固化,因此,可以充分地扩大相邻半导体芯片间的间隙而不产生断裂。结果,在后述的拾取时,可以防止半导体芯片之间接触而破损。
为了将在切割/芯片接合薄膜10上胶粘固定的半导体芯片5剥离,进行半导体芯片5的拾取。在粘贴芯片接合薄膜3’之前进行紫外线照射时,拾取以不对粘合剂层2照射紫外线的方式进行。作为拾取方法,没有特别限制,可以使用现有公知的各种拾取方法。例如可以列举:用针从切割/芯片接合薄膜10一侧将各个半导体芯片5向上推,通过拾取装置拾取被上推的半导体芯片5的方法等。本发明的切割/芯片接合薄膜10中,粘合剂层2与芯片接合薄膜3的剥离性良好,因此即使减少针数、或者减小上推量,也可以提高成品率进行拾取。
拾取的半导体芯片5通过芯片接合薄膜3a胶粘固定在被粘物6上(芯片接合)。被粘物6载置于加热台(heat block)9上。作为被粘物6,可以列举:引线框、TAB薄膜、衬底或者另外制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物、也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底,可以使用现有公知的衬底。另外,作为所述引线框,可以使用Cu引线框、42合金引线框等金属引线框或者由玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等制成的有机衬底。但是,本发明不限于这些,也包括在安装半导体元件、与半导体元件电连接后可以使用的电路衬底。
芯片接合薄膜3为热固型时,通过加热固化将半导体芯片5胶粘固定在被粘物6上,提高耐热强度。另外,半导体芯片5通过芯片接合薄膜3a胶粘固定到衬底等上而得到的制品可以用于回流工序。之后,进行将衬底的端子部(内部端子)的前端与半导体芯片5上的电极焊盘(未图示)通过焊线7进行电连接的丝焊,再用密封树脂8将半导体芯片密封,并将该密封树脂8后固化。由此,制作本实施方式的半导体装置。
实施例
以下,更具体地例示说明本发明的优选实施例。但是,这些实施例所记载的材料或配合量等如果没有特别限定的记载,则不应将本发明的范围限定于此,只不过是举例说明而已。另外,各例中,“份”如果没有特别说明是重量基准。
(实施例1)
<切割薄膜的制作>
在具有冷凝管、氮气导入管、温度计和搅拌装置的反应容器中,加入88.8份丙烯酸-2-乙基己酯(以下称为“2EHA”)、11.2份丙烯酸-2-羟基乙酯(以下称为“HEA”)、0.2份过氧化苯甲酰及65份甲苯,在氮气流中在61℃下进行6小时聚合处理,得到重均分子量85万的丙烯酸类聚合物A。重均分子量如下所述。2EHA与HEA的摩尔比为100摩尔比20摩尔。
在该丙烯酸类聚合物A中加入12份(相对于HEA为80摩尔%)2-甲基丙烯酰氧乙基异氰酸酯(以下称为“MOI”),在空气气流中在50℃下进行48小时加成反应处理,得到丙烯酸类聚合物A’。
然后,在100份丙烯酸类聚合物A’中加入30份作为分子内具有两个以上自由基反应性碳碳双键的化合物的KAYARAD DPHA(商品名,日本化药株式会社制)、8份多异氰酸酯化合物(商品名“コロネ一トL”,日本聚氨酯株式会社制造)和5份光聚合引发剂(商品名“ィルガキュァ651”,汽巴特殊化学品公司制),制作粘合剂溶液。
将前述制备的粘合剂溶液涂布于PET剥离衬里的经聚硅氧烷(silicone)处理的面上,在120℃加热交联2分钟,形成厚度10μm的粘合剂层前体。然后,在该粘合剂层前体表面粘贴厚度100μm的聚烯烃薄膜。之后,在50℃保存24小时。之后,仅对粘合剂层前体的与半导体晶片粘贴部分(直径200mm)相当的部分(直径220mm)照射紫外线而形成粘合剂层。由此,制作本实施例的切割薄膜。另外,关于该粘合剂层的拉伸弹性模量,通过后述测定方法测定的结果是71MPa。另外,紫外线的照射条件如下所述。
<紫外线的照射条件>
紫外线(UV)照射装置:高压水银灯
紫外线照射积分光量:500mJ/cm2
输出功率:75W
照射强度150mW/cm2
另外,紫外线照射是对粘合剂层前体直接照射。
<芯片接合薄膜的制作>
使相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)为59份环氧树脂1(JER株式会社制,ェピコ一ト1004)、53份环氧树脂2(JER株式会社制,ェピコ一ト827)、121份酚树脂(三井化学株式会社制,商品名:ミレックスXLC-4L)和222份球状二氧化硅(ァドマテックス株式会社制,商品名:SO-25R)溶解于甲乙酮中,制备成浓度23.6重量%。
将该胶粘剂组合物的溶液涂布于作为剥离衬里(隔膜)的由经聚硅氧烷脱模处理的厚度38μm的聚对苯二甲酸乙二醇酯薄膜形成的脱模处理薄膜,然后在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜。另外,将芯片接合薄膜转印到前述的切割薄膜的粘合剂层一侧,得到本实施例的切割/芯片接合薄膜。
<重均分子量Mw的测定>
重均分子量Mw的测定通过GPC(凝胶渗透色谱法)进行。测定条件如下所述。另外,重均分子量经聚苯乙烯换算来计算。
测定装置:HLC-8120GPC(制品名,东曹公司制)
色谱柱:TSKgel GMH-H(S)×2(商品编号,东曹公司制)
流量:0.5ml/分钟
注射量:100μl
柱温:40℃
洗脱液:THF
注射试样浓度:0.1重量%
检测器:差示折射计
(实施例2~16)
关于各实施例2~16,变更为下表1所示的组成及配合比例,除此以外,与所述实施例1同样操作,制作切割/芯片接合薄膜。
另外,表1及后述的表2中记载的简称的含义如下所述。
2EHA:丙烯酸-2-乙基己酯
i-OA:丙烯酸异辛酯
i-NA:丙烯酸异壬酯
BA:丙烯酸正丁酯
AA:丙烯酸
HEA:丙烯酸-2-羟基乙酯
4HBA:丙烯酸-4-羟基丁酯
AOI:2-丙烯酰氧乙基异氰酸酯
C/L:多异氰酸酯化合物(商品名“コロネ一トL”,日本聚氨酯株式会社制造)
T/C:环氧类交联剂(商品名“テトラッドC”,三菱瓦斯化学株式会社制)
DPHA:KAYARAD DPHA(商品名,日本化药株式会社制)
(比较例1~8)
关于各比较例1-8,除了变更为下表2所示的组成及配合比例以外,与所述实施例1同样进行操作,制作切割/芯片接合薄膜。
(拾取)
使用各实施例及比较例的各切割/芯片接合薄膜,在以下要点下实际进行半导体晶片的切割后进行拾取,并评价各切割/芯片接合薄膜的性能。
将半导体晶片(直径8英寸、厚度0.6mm)进行背面研磨处理,将厚度0.050mm的镜面晶片作为工件使用。从切割/芯片接合薄膜上剥离隔膜后,在其芯片接合薄膜上在40℃下用辊压接镜面晶片使其粘贴,并进行切割。另外,切割是进行全切而得到10mm见方的芯片尺寸。
然后,进行将各切割/芯片接合薄膜拉伸、使各芯片间达到预定间隔的扩展工序。其中,紫外线的照射条件是使用日东精机(商品名:UM-810型)作为紫外线(UV)装置,将紫外线照射积分光量设定为300mJ/cm2。另外,紫外线照射从聚烯烃薄膜一侧进行。
另外,以从各切割/芯片接合薄膜的基材一侧用针上推的方式拾取半导体芯片,进行拾取性评价。具体而言,连续拾取400个半导体芯片,显示在后述条件下进行时的成功率。
<晶片磨削条件>
磨削装置:ディスコ公司制,DFG-8560
半导体晶片:8英寸直径(从厚度0.6mm背面磨削至0.050mm)
<粘贴条件>
粘贴装置:日东精机制MA-3000II
粘贴速度:10mm/分钟
粘贴压力:0.15MPa
粘贴时的级温:40℃
<切割条件>
切割装置:ディスコ公司制,DFD-6361
切割环:2-8-1(ディスコ公司制)
切割速度:80mm/秒
切割刀片:
Z1:ディスコ公司制2050HEDD
Z2:ディスコ公司制2050HEBB
切割刀片转数:
Z1:40,000rpm
Z2:40,000rpm
刀片高度:
Z1:0.0170mm(根据半导体晶片厚度决定(晶片厚度为50μm时,为0.0170mm))
Z2:0.085mm
切割方式:A方式/阶段式切割
晶片芯片尺寸:10.0mm见方
<拾取条件>
关于拾取条件,分别通过下表3所示的条件进行。
表3
针 | 全长10mm、直径0.7mm、锐角15度、顶端R350μm |
针数(根) | 9 |
针上推量(μm) | 200 |
针上推速度(mm/秒) | 5 |
夹头保持时间(毫秒) | 200 |
扩展(mm/秒) | 3 |
(拉伸弹性模量的测定方法)
在将样品尺寸设定为初期长度10mm、断面积0.1~0.5mm2,测定温度23℃、夹盘间距50mm、拉伸速度50mm/分钟的测定条件下,在MD方向或TD方向进行拉伸试验,测定各方向上样品的伸长变化量(mm)。结果,在得到的S-S曲线的初期上升部分引切线,将该切线相当于100%伸长时的拉伸强度除以基材薄膜的断面积,得到拉伸弹性模量。另外,对于紫外线照射后的拉伸弹性模量的测定,根据所述照射条件从聚烯烃薄膜一侧照射紫外线之后进行。
(切割环的胶糊残留)
从切割环上剥离切割薄膜,通过目测确认切割环上是否产生胶糊残留。确认有胶糊残留时评价为×,未确认时评价为○。
(剥离粘合力)
从各切割/芯片接合薄膜上切出宽10mm的试片,将其粘贴于在40℃的热板上载置的硅镜面晶片上。放置约30分钟,使用拉伸试验机测定剥离粘合力。测定条件是:剥离角度15°、拉伸速度300mm/分钟。另外,试片的保存及剥离粘合力的测定在温度23℃、相对湿度50%的环境下进行。
表4
Mw(万) | UV照射 | UV固化后的拉伸弹性模量(MPa) | 拾取(%) | 剥离粘合力(N/10mm) | |
实施例1 | 58 | 芯片接合薄膜的粘贴前照射 | 71 | 100.0 | 0.57 |
实施例2 | 58 | 芯片接合薄膜的粘贴前照射 | 40 | 100.0 | 0.67 |
实施例3 | 58 | 芯片接合薄膜的粘贴前照射 | 95 | 100.0 | 0.52 |
实施例4 | 56 | 芯片接合薄膜的粘贴前照射 | 70 | 100.0 | 0.70 |
实施例5 | 62 | 芯片接合薄膜的粘贴前照射 | 90 | 100.0 | 0.80 |
实施例6 | 58 | 芯片接合薄膜的粘贴前照射 | 72 | 100.0 | 0.57 |
实施例7 | 56 | 芯片接合薄膜的粘贴前照射 | 70 | 100.0 | 0.53 |
实施例8 | 71 | 芯片接合薄膜的粘贴前照射 | 120 | 99.8 | 0.80 |
实施例9 | 63 | 芯片接合薄膜的粘贴前照射 | 77 | 100.0 | 0.57 |
实施例10 | 58 | 芯片接合薄膜的粘贴前照射 | 75 | 100.0 | 0.58 |
实施例11 | 58 | 芯片接合薄膜的粘贴前照射 | 60 | 100.0 | 0.62 |
实施例12 | 59 | 芯片接合薄膜的粘贴前照射 | 85 | 100.0 | 0.54 |
实施例13 | 62 | 芯片接合薄膜的粘贴前照射 | 64 | 100.0 | 0.77 |
实施例14 | 41 | 芯片接合薄膜的粘贴前照射 | 71 | 100.0 | 0.68 |
实施例15 | 83 | 芯片接合薄膜的粘贴前照射 | 71 | 100.0 | 0.58 |
实施例16 | 125 | 芯片接合薄膜的粘贴前照射 | 120 | 100.0 | 0.66 |
表5
Mw(万) | UV照射 | UV固化后的拉伸弹性模量(MPa) | 拾取(%) | 剥离粘合力(N/10mm) | |
比较例1 | 88 | 芯片接合薄膜的粘贴前照射 | 83 | 0.0 | 1.10 |
比较例2 | 54 | 芯片接合薄膜的粘贴前照射 | 60 | 3.8 | 1.02 |
比较例3 | 67 | 芯片接合薄膜的粘贴前照射 | 95 | 8.3 | 0.90 |
比较例4 | 58 | 芯片接合薄膜的粘贴前照射 | 45 | 37.5 | 1.05 |
比较例5 | 59 | 芯片接合薄膜的粘贴前照射 | 88 | 43.5 | 0.95 |
比较例6 | 58 | 芯片接合薄膜的粘贴前照射 | 20 | 0.0 | 1.10 |
比较例7 | 58 | 芯片接合薄膜的粘贴前照射 | 222 | 0.0 | 0.60 |
比较例8 | 58 | 芯片接合薄膜的粘贴前照射 | 180 | 31.0 | 0.65 |
Claims (15)
1.一种切割/芯片接合薄膜,具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜,其特征在于,
所述粘合剂层由丙烯酸类粘合剂形成,所述丙烯酸类粘合剂由丙烯酸类聚合物和相对于所述丙烯酸类聚合物100重量份的比例在10~60重量份的范围内的分子内具有2个以上自由基反应性碳碳双键的化合物构成,所述丙烯酸类聚合物由丙烯酸酯、相对于丙烯酸酯100摩尔%的比例在10~40摩尔%范围内的含羟基单体和相对于含羟基单体100摩尔%的比例在70~90摩尔%范围内的分子内具有自由基反应性碳碳双键的异氰酸酯化合物构成,
所述芯片接合薄膜由环氧树脂形成,并且层压在所述粘合剂层上。
2.如权利要求1所述的切割/芯片接合薄膜,其特征在于,所述芯片接合薄膜层压在紫外线照射后的粘合剂层上。
3.如权利要求1或2所述的切割/芯片接合薄膜,其特征在于,所述粘合剂层的紫外线照射后的23℃下的拉伸弹性模量在40~170MPa的范围内。
4.如权利要求1至3中任一项所述的切割/芯片接合薄膜,其特征在于,所述紫外线照射时的积分光量在30~1000mJ/cm2的范围内。
5.如权利要求1所述的切割/芯片接合薄膜,其特征在于,所述丙烯酸酯以相对于丙烯酸酯总量100摩尔%为50~91摩尔%的比例含有由CH2=CHCOOR表示的丙烯酸酯A,式中,R为碳原子数6~10的烷基。
6.如权利要求1所述的切割/芯片接合薄膜,其特征在于,所述含羟基单体为选自由(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基十二烷酯和(甲基)丙烯酸(4-羟甲基环己基)甲酯组成的组中的至少任意一种。
7.如权利要求1至6中任一项所述的切割/芯片接合薄膜,其特征在于,所述具有自由基反应性碳碳双键的异氰酸酯化合物为选自2-甲基丙烯酰氧乙基异氰酸酯或者2-丙烯酰氧乙基异氰酸酯的至少任意一种。
8.如权利要求1所述的切割/芯片接合薄膜,其特征在于,所述丙烯酸类聚合物的重均分子量在35万~100万的范围内。
9.如权利要求1所述的切割/芯片接合薄膜,其特征在于,在温度23℃、剥离角度15度、剥离速度300mm/分钟条件下从所述芯片接合薄膜上剥离切割薄膜时,切割薄膜对于所述芯片接合薄膜的剥离粘合力在0.5~0.8N/10mm的范围内。
10.如权利要求1至9中任一项所述的切割/芯片接合薄膜,其特征在于,构成所述粘合剂层的所述丙烯酸类聚合物不含丙烯酸作为单体成分。
11.一种切割/芯片接合薄膜的制造方法,所述切割/芯片接合薄膜具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜,其特征在于包括:
通过丙烯酸类粘合剂在所述基材上形成粘合剂层前体的工序,所述丙烯酸类粘合剂由丙烯酸类聚合物和相对于所述丙烯酸类聚合物100重量份的比例在10~60重量份的范围内的分子内具有2个以上自由基反应性碳碳双键的化合物构成,所述丙烯酸类聚合物由丙烯酸酯、相对于丙烯酸酯100摩尔%的比例在10~40摩尔%范围内的含羟基单体和相对于含羟基单体100摩尔%的比例在70~90摩尔%范围内的分子内具有自由基反应性碳碳双键的异氰酸酯化合物构成;和
在所述粘合剂层前体上层压所述芯片接合薄膜的工序。
12.如权利要求11所述的切割/芯片接合薄膜的制造方法,其特征在于,在所述层压芯片接合薄膜的工序之前,包括对所述粘合剂层前体照射紫外线而形成所述粘合剂层的工序。
13.如权利要求12所述的切割/芯片接合薄膜的制造方法,其特征在于,所述紫外线的照射在30~1000mJ/cm2的范围内进行。
14.一种半导体装置的制造方法,该方法使用具有在基材上具有粘合剂层的切割薄膜和在该粘合剂层上设置的芯片接合薄膜的切割/芯片接合薄膜,其特征在于,包括以下工序:
准备权利要求1所述的切割/芯片接合薄膜,并在所述芯片接合薄膜上压接半导体晶片的工序;
通过将所述半导体晶片与所述芯片接合薄膜一起切割而形成半导体芯片的工序;和
将所述半导体芯片与所述芯片接合薄膜一起从所述粘合剂层上剥离的工序。
15.如权利要求14所述的半导体装置的制造方法,其特征在于,从所述半导体晶片的压接工序直至半导体芯片的剥离工序,所述粘合剂层上未照射紫外线。
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Publication number | Priority date | Publication date | Assignee | Title |
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CN102190975A (zh) * | 2010-03-01 | 2011-09-21 | 日东电工株式会社 | 芯片接合薄膜、切割/芯片接合薄膜及半导体装置 |
CN102250555A (zh) * | 2010-05-17 | 2011-11-23 | 古河电气工业株式会社 | 晶片加工用带 |
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Also Published As
Publication number | Publication date |
---|---|
US20100029061A1 (en) | 2010-02-04 |
TWI386988B (zh) | 2013-02-21 |
JP4718629B2 (ja) | 2011-07-06 |
CN101645427B (zh) | 2014-05-07 |
JP2011176331A (ja) | 2011-09-08 |
JP5368502B2 (ja) | 2013-12-18 |
JP2010062540A (ja) | 2010-03-18 |
EP2151860A2 (en) | 2010-02-10 |
KR20100015292A (ko) | 2010-02-12 |
TW201017740A (en) | 2010-05-01 |
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