JP2010056544A - ダイシング・ダイボンドフィルム - Google Patents
ダイシング・ダイボンドフィルム Download PDFInfo
- Publication number
- JP2010056544A JP2010056544A JP2009178074A JP2009178074A JP2010056544A JP 2010056544 A JP2010056544 A JP 2010056544A JP 2009178074 A JP2009178074 A JP 2009178074A JP 2009178074 A JP2009178074 A JP 2009178074A JP 2010056544 A JP2010056544 A JP 2010056544A
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- Japan
- Prior art keywords
- die
- adhesive layer
- dicing
- pressure
- sensitive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
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- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
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Abstract
【解決手段】紫外線透過性の基材1上に粘着剤層2を有するダイシングフィルムと、その上に設けられたダイボンドフィルム3とを有するダイシング・ダイボンドフィルム10において、粘着剤層は、アクリル酸エステルと、アクリル酸エステル100mol%に対する割合が10〜40mol%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマー100mol%に対する割合が70〜90mol%の範囲内の分子内にラジカル反応性C−C二重結合を有するイソシアネート化合物とで構成されるアクリル系ポリマーにより形成される粘着剤層前駆体に、エポキシ樹脂からなるダイボンドフィルムを積層した後、基材側から紫外線を照射して硬化させたものである。
【選択図】図1
Description
本発明の実施の形態について、図1及び図2を参照しながら説明する。図1は、本実施の形態に係るダイシング・ダイボンドフィルムを示す断面模式図である。図2は、本実施の形態に係る他のダイシング・ダイボンドフィルムを示す断面模式図である。但し、説明に不要な部分は省略し、また、説明を容易にする為に拡大又は縮小等して図示した部分がある。
次に、本発明のダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
本発明のダイシング・ダイボンドフィルム11を用いた半導体装置の製造方法について、図3を参照しながら説明する。
<粘着剤層前駆体の作製>
冷却管、窒素導入管、温度計および撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(以下、「2EHA」という。)88.8部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」という。)11.2部、過酸化ベンゾイル0.2部及びトルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、重量平均分子量85万のアクリル系ポリマーAを得た。重量平均分子量は下記の通りである。2EHAとHEAとのモル比は、100mol対20molとした。
エポキシ樹脂(日本化薬(株)製、商品名;EPPN501HY)50部、フェノール樹脂(明和化成(株)製、商品名;MEH7800)50部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、フィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)70部をメチルエチルケトンに溶解させ、濃度23.6重量%となる様に調製した。
前記ダイボンドフィルムを前述のダイシングフィルムにおける粘着剤層前駆体側に転写した。続いて、温度25±3℃、相対湿度85%以下の環境下で24時間放置した。更に、粘着剤層前駆体の半導体ウェハ貼り付け部分(直径200mm)に相当する部分(直径220mm)にのみ、ポリオレフィンフィルム側から紫外線を照射して粘着剤層を形成した。これにより、本実施例に係るダイシング・ダイボンドフィルムを作製した。尚、紫外線の照射条件は下記の通りとした。
紫外線(UV)照射装置:高圧水銀灯
紫外線照射積算光量:500mJ/cm2
出力:75W
照射強度150mW/cm2
重量平均分子量Mwの測定は、GPC(ゲル・パーミエーション・クロマトグラフィー)により行った。測定条件は下記の通りである。尚、重量平均分子量はポリスチレン換算により算出した。
測定装置:HLC−8120GPC(製品名、東ソー社製)
カラム:TSKgel GMH−H(S)×2(品番、東ソー社製)
流量:0.5ml/min
注入量:100μl
カラム温度:40℃
溶離液:THF
注入試料濃度:0.1重量%
検出器:示差屈折計
各実施例2〜14については、下記表1に示す組成及び配合割合に変更したこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
本実施例においては、ダイシングフィルムにおける粘着剤層前駆体にダイボンドフィルムを転写した後における放置工程を、温度25±3℃、相対湿度85%以下の環境下で12時間としたことが以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
本実施例においては、ダイシングフィルムにおける粘着剤層前駆体にダイボンドフィルムを転写した後における放置工程を、温度25±3℃、相対湿度85%以下の環境下で0.1時間としたことが以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
2EHA:アクリル酸2−エチルヘキシル
i−OA:アクリル酸イソオクチル
i−NA:アクリル酸イソノニル
BA:アクリル酸n−ブチル
AA:アクリル酸
HEA:2−ヒドロキシエチルアクリレート
4HBA:4−ヒドロキシブチルアクリレート
AOI:2−アクリロイルオキシエチルイソシアネート
C/L:ポリイソシアネート化合物(商品名「コロネートL」、日本ポリウレタン(株)製)
T/C:エポキシ系架橋剤(商品名「テトラッドC」、三菱ガス化学(株)製)
本比較例においては、前記実施例1で使用した粘着剤溶液を、PET剥離ライナーのシリコーン処理を施した面上に塗布し、120℃で2分間加熱架橋して、厚さ10μmの粘着剤層前駆体を形成した。次いで、当該粘着剤層前駆体表面に、厚さ100μmのポリオレフィンフィルムを貼り合せた。その後、50℃にて24時間保存をした。続いて、粘着剤層前駆体の半導体ウェハ貼り付け部分(直径200mm)に相当する部分(直径220mm)にのみ紫外線を照射して粘着剤層を形成した。これにより、本比較例に係るダイシングフィルムを作製した。尚、紫外線の照射条件は実施例1の場合と同様にした。
各比較例2〜14については、下記表2に示す組成及び配合割合に変更したこと以外は、前記比較例1と同様にしてダイシング・ダイボンドフィルムを作製した。
本比較例においては、前記実施例1で使用した粘着剤溶液を、PET剥離ライナーのシリコーン処理を施した面上に塗布し、120℃で2分間加熱架橋して、厚さ10μmの粘着剤層前駆体を形成した。次いで、当該粘着剤層前駆体表面に、厚さ100μmのポリオレフィンフィルムを貼り合せた。その後、50℃にて24時間保存をした。
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.15mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.215mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:0.5mm角
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行った後にピックアップを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.075mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.170mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:10.0mm角
ピックアップ条件については、下記表3に示す条件A及び条件Bによりそれぞれ行った。
測定条件として、サンプルサイズを初期長さ10mm、断面積0.1〜0.5mm2にし、測定温度23℃、チャック間距離50mm、引張速度50mm/minでMD方向又はTD方向に引張試験を行い、各方向に於けるサンプルの伸びの変化量(mm)を測定した。その結果、得られたS−S曲線の初期の立ち上がりの部分に接線を引き、その接線が100%伸びに相当するときの引張強度を基材フィルムの断面積で割り、引張弾性率とした。尚、各サンプルは、ダイシング・ダイボンドフィルムからダイボンドフィルムを剥離したものを用いた。
ダイシングフィルムをダイシングリングから剥がし、ダイシングリングに糊残りが発生しているか否かを目視により確認した。糊残りが確認されたものを×とし、確認されなかったものを○とした。
各ダイシング・ダイボンドフィルムから幅10mmのサンプル片を切り出し、これを40℃のホットプレート上に載置されたシリコンミラーウエハに貼り付けた。約30分間放置して、引張試験機を用い引き剥がし粘着力を測定した。測定条件は、剥離角度:15°、引張速度:300mm/minとした。尚、サンプル片の保存及び引き剥がし粘着力の測定は、温度23℃、相対湿度50%の環境下で行った。
2 粘着剤層
3 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
10、11 ダイシング・ダイボンドフィルム
Claims (11)
- 紫外線透過性の基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムであって、
前記粘着剤層は、主モノマーとしてのアクリル酸エステルと、アクリル酸エステル100mol%に対する割合が10〜40mol%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマー100mol%に対する割合が70〜90mol%の範囲内の分子内にラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物とで構成されるアクリル系ポリマーにより形成される粘着剤層前駆体に、前記ダイボンドフィルムが積層された後、前記基材側から紫外線を照射して硬化されたものであり、
前記ダイボンドフィルムはエポキシ樹脂により形成されるものであることを特徴とするダイシング・ダイボンドフィルム。 - 前記紫外線照射の際の積算光量は30〜1000mJ/cm2の範囲内であることを特徴とする請求項1に記載のダイシング・ダイボンドフィルム。
- 前記アクリル酸エステルは、CH2=CHCOOR(式中、Rは炭素数が6〜10のアルキル基である。)で表されることを特徴とする請求項1又は2に記載のダイシング・ダイボンドフィルム。
- 前記ヒドロキシル基含有モノマーは、(メタ)アクリル酸2−ヒドロキシエチル、(メタ)アクリル酸2−ヒドロキシプロピル、(メタ)アクリル酸4−ヒドロキシブチル、(メタ)アクリル酸6−ヒドロキシヘキシル、(メタ)アクリル酸8−ヒドロキシオクチル、(メタ)アクリル酸10−ヒドロキシデシル、(メタ)アクリル酸12−ヒドロキシラウリル、及び(4−ヒドロキシメチルシクロヘキシル)メチル(メタ)アクリレートからなる群より選択される少なくとも何れか1種であることを特徴とする請求項1〜3の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記ラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物は、2−メタクリロイルオキシエチルイソシアネート又は2−アクリロイルオキシエチルイソシアネートの少なくとも何れかであることを特徴とする請求項1〜4の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記ポリマーの重量平均分子量は、35万〜100万の範囲内であることを特徴とする請求項1〜5の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記粘着剤層の23℃における引張弾性率が7〜170MPaの範囲内であることを特徴とする請求項1〜6の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記粘着剤層を構成する前記アクリル系ポリマーはモノマー成分としてはアクリル酸を含まないことを特徴とする請求項1〜7の何れか1項に記載のダイシング・ダイボンドフィルム。
- 紫外線透過性の基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムの製造方法であって、
主モノマーとしてのアクリル酸エステルと、アクリル酸エステル100mol%に対する割合が10〜40mol%の範囲内のヒドロキシル基含有モノマーと、ヒドロキシル基含有モノマー100mol%に対する割合が70〜90mol%の範囲内の分子内にラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物とを含むポリマーを含有する粘着剤層前駆体を前記基材上に形成する工程と、
前記粘着剤層前駆体上に前記ダイボンドフィルムを貼り合わせる工程と、
前記ダイボンドフィルムを貼り合わせた前記粘着剤層前駆体に、前記基材側から紫外線を照射して前記粘着剤層を形成する工程とを具備することを特徴とするダイシング・ダイボンドフィルムの製造方法。 - 前記紫外線の照射は30〜1000mJ/cm2の範囲内で行うことを特徴とする請求項9に記載のダイシング・ダイボンドフィルムの製造方法。
- 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムを用いた半導体装置の製造方法であって、
請求項1〜8に記載のダイシング・ダイボンドフィルムを用意し、
前記ダイボンドフィルム上に半導体ウェハを圧着する工程と、
前記半導体ウェハを前記ダイボンドフィルムと共にダイシングすることにより半導体チップを形成する工程と、
前記半導体チップを前記ダイボンドフィルムと共に、前記粘着剤層から剥離する工程とを具備し、
前記半導体ウェハの圧着工程から半導体チップの剥離工程までは、前記粘着剤層に紫外線を照射しないことを特徴とする半導体装置の製造方法。
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CN101640191A (zh) | 2010-02-03 |
EP2149900A2 (en) | 2010-02-03 |
TW201016820A (en) | 2010-05-01 |
TWI439528B (zh) | 2014-06-01 |
US20100029059A1 (en) | 2010-02-04 |
KR20100014180A (ko) | 2010-02-10 |
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