JP4717086B2 - ダイシング・ダイボンドフィルム - Google Patents
ダイシング・ダイボンドフィルム Download PDFInfo
- Publication number
- JP4717086B2 JP4717086B2 JP2008009494A JP2008009494A JP4717086B2 JP 4717086 B2 JP4717086 B2 JP 4717086B2 JP 2008009494 A JP2008009494 A JP 2008009494A JP 2008009494 A JP2008009494 A JP 2008009494A JP 4717086 B2 JP4717086 B2 JP 4717086B2
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- Prior art keywords
- adhesive layer
- dicing
- die
- pressure
- sensitive adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 136
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims abstract description 129
- 239000010410 layer Substances 0.000 claims abstract description 109
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- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims abstract description 20
- 239000012948 isocyanate Substances 0.000 claims abstract description 18
- 125000000524 functional group Chemical group 0.000 claims abstract description 12
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- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 40
- 239000012790 adhesive layer Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 35
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- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 10
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 8
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- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 claims description 4
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- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 claims description 4
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- DXPPIEDUBFUSEZ-UHFFFAOYSA-N 6-methylheptyl prop-2-enoate Chemical compound CC(C)CCCCCOC(=O)C=C DXPPIEDUBFUSEZ-UHFFFAOYSA-N 0.000 claims 2
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- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
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- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
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- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
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- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
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- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 2
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- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
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Description
本発明の実施の形態について、図1及び図2を参照しながら説明する。図1は、本実施の形態に係るダイシング・ダイボンドフィルムを示す断面模式図である。図2は、本実施の形態に係る他のダイシング・ダイボンドフィルムを示す断面模式図である。但し、説明に不要な部分は省略し、また、説明を容易にする為に拡大又は縮小等して図示した部分がある。
次に、本発明のダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
本発明のダイシング・ダイボンドフィルム11を用いた半導体装置の製造方法について、図3を参照しながら説明する。
<ダイシングフィルムの作製>
冷却管、窒素導入管、温度計および撹拌装置を備えた反応容器に、アクリル酸2−エチルヘキシル(以下、「2EHA」という。)86.4部、アクリル酸−2−ヒドロキシエチル(以下、「HEA」という。)13.6部、過酸化ベンゾイル0.2部及びトルエン65部を入れ、窒素気流中で61℃にて6時間重合処理をし、アクリル系ポリマーAを得た。前記HEAは、20mol%とした。
紫外線(UV)照射装置:高圧水銀灯
紫外線照射積算光量:500mJ/cm2
出力:75W
照射強度150mW/cm2
尚、紫外線照射は粘着剤層前駆体に対し直接照射した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、商品名;パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)59部、エポキシ樹脂2(JER(株)製、エピコート827)53部、フェノール樹脂(三井化学(株)製、商品名:ミレックスXLC−4L)121部、球状シリカ(アドマテックス(株)製、商品名;SO−25R)222部をメチルエチルケトンに溶解して、濃度23.6重量%となる様に調製した。
各実施例2〜10については、下記表1に示す組成及び含有量に変更したこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
2EHA:アクリル酸2−エチルヘキシル
HEA:2−ヒドロキシエチルアクリレート
4HBA:4−ヒドロキシブチルアクリレート
AOI:2−アクリロイルオキシエチルイソシアネート
C/L:ポリイソシアネート化合物(商品名「コロネートL」、日本ポリウレタン(株)製)
C2030:商品名「コロネート2030」、日本ポリウレタン(株)社製)
各比較例1〜6については、下記表2に示す組成及び含有量に変更したこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。また、比較例7については、下記表2に示す組成及び含有量に変更し、かつ、ダイボンドフィルムの貼り合わせ前の紫外線照射を実施しないこと以外は、前記実施例1と同様にしてダイシング・ダイボンドフィルムを作製した。
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.15mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.215mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:1.0mm角
各実施例及び比較例のそれぞれダイシング・ダイボンドフィルムを用いて、以下の要領で、実際に半導体ウェハのダイシングを行った後にピックアップを行い、各ダイシング・ダイボンドフィルムの性能を評価した。
研削装置:ディスコ社製 DFG−8560
半導体ウェハ:8インチ径(厚さ0.6mmから0.075mmに裏面研削)
貼り付け装置:日東精機製、MA−3000II
貼り付け速度計:10mm/min
貼り付け圧力:0.15MPa
貼り付け時のステージ温度:40℃
ダイシング装置:ディスコ社製、DFD−6361
ダイシングリング:2−8−1(ディスコ社製)
ダイシング速度:80mm/sec
ダイシングブレード:
Z1;ディスコ社製2050HEDD
Z2;ディスコ社製2050HEBB
ダイシングブレード回転数:
Z1;40,000rpm
Z2;40,000rpm
ブレード高さ:
Z1;0.170mm(半導体ウェハの厚みによる(ウェハ厚みが75μmの場合、0.170mm))
Z2;0.085mm
カット方式:Aモード/ステップカット
ウェハチップサイズ:10.0mm角
ピックアップ条件については、下記表3に示す条件A及び条件Bによりそれぞれ行った。
ダイシングフィルムをダイシングリングから剥がし、ダイシングリングに糊残りが発生しているか否かを目視により確認した。糊残りが確認されたものを×とし、確認されなかったものを○とした。
2 粘着剤層
3 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 ヒートブロック
10、11 ダイシング・ダイボンドフィルム
Claims (9)
- 基材上に粘着剤層を有するダイシングフィルムと、該ダイシングフィルム上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムであって、
前記粘着剤層は、
10〜40mol%のヒドロキシル基含有モノマーと、アクリル酸オクチル、アクリル酸2−エチルヘキシル又はアクリル酸イソオクチルの少なくとも何れかとを含むアクリル系ポリマーに、
前記ヒドロキシル基含有モノマーに対し70〜90mol%の範囲内のラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物を付加反応させたポリマーと、ヒドロキシル基に対し反応性を示す官能基を分子中に2個以上備え、かつ、前記ポリマー100重量部に対し含有量が2〜20重量部の架橋剤とを含み、かつ、アクリル酸を含まず、
所定条件下での紫外線照射により硬化されたものであり、
前記ダイボンドフィルムはエポキシ樹脂を含み構成され、かつ、紫外線照射後の粘着剤層に対し貼り合わされたものであることを特徴とするダイシング・ダイボンドフィルム。 - 前記紫外線の照射は30〜1000mJ/cm2の範囲内で行われることを特徴とする請求項1に記載のダイシング・ダイボンドフィルム。
- 前記ヒドロキシル基含有モノマーは、(メタ)アクリル酸2−ヒドロキシエチル、(メタ)アクリル酸2−ヒドロキシプロピル、(メタ)アクリル酸4−ヒドロキシブチル、(メタ)アクリル酸6−ヒドロキシヘキシル、(メタ)アクリル酸8−ヒドロキシオクチル、(メタ)アクリル酸10−ヒドロキシデシル、(メタ)アクリル酸12−ヒドロキシラウリル、及び(4−ヒドロキシメチルシクロヘキシル)メチル(メタ)アクリレートからなる群より選択される少なくとも何れか1種であることを特徴とする請求項1又は2に記載のダイシング・ダイボンドフィルム。
- 前記ラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物は、2−メタクリロイルオキシエチルイソシアネート又は2−アクリロイルオキシエチルイソシアネートの少なくとも何れかであることを特徴とする請求項1〜3の何れか1項に記載のダイシング・ダイボンドフィルム。
- 前記粘着剤層は、少なくとも前記ダイボンドフィルムにおける半導体ウェハ貼り付け部分に対応する部分に対して紫外線が照射されたものであり、
前記粘着剤層における半導体ウェハ貼り付け部分に対応する部分の粘着力(温度23℃、剥離角度15度、剥離速度300mm/分)が0.5〜1.5N/10mmであり、
それ以外の部分の粘着力(温度23℃、剥離角度15度、剥離速度300mm/分)が0.5〜10N/10mmであることを特徴とする請求項1〜4の何れか1項に記載のダイシング・ダイボンドフィルム。 - 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムの製造方法であって、
10〜40mol%のヒドロキシル基含有モノマーと、アクリル酸オクチル、アクリル酸2−エチルヘキシル又はアクリル酸イソオクチルの少なくとも何れかとを含むアクリル系ポリマーに、前記ヒドロキシル基含有モノマーに対し70〜90mol%の範囲内のラジカル反応性炭素−炭素二重結合を有するイソシアネート化合物を付加反応させたポリマーと、ヒドロキシル基に対し反応性を示す官能基を分子中に2個以上備え、かつ、前記ポリマー100重量部に対し含有量が2〜20重量部の架橋剤とを含み構成され、かつ、アクリル酸を含まない粘着剤層前駆体を前記基材上に形成する工程と、
前記粘着剤層前駆体に所定条件下で紫外線を照射して前記粘着剤層を形成する工程と、
前記粘着剤層上に前記ダイボンドフィルムを貼り合わせる工程とを有することを特徴とするダイシング・ダイボンドフィルムの製造方法。 - 前記紫外線の照射は30〜1000mJ/cm2の範囲内で行うことを特徴とする請求項6に記載のダイシング・ダイボンドフィルムの製造方法。
- 前記粘着剤層前駆体に対する紫外線の照射は、少なくとも前記ダイボンドフィルムにおける半導体ウェハ貼り付け部分に対応する部分に対して行われ、
前記粘着剤層における半導体ウェハ貼り付け部分に対応する部分の粘着力(温度23℃、剥離角度15度、剥離速度300mm/分)を0.5〜1.5N/10mmとし、
それ以外の部分の粘着力(温度23℃、剥離角度15度、剥離速度300mm/分)を0.5〜10N/10mmとすることを特徴とする請求項6又は7に記載のダイシング・ダイボンドフィルムの製造方法。 - 基材上に粘着剤層を有するダイシングフィルムと、該粘着剤層上に設けられたダイボンドフィルムとを有するダイシング・ダイボンドフィルムを用いた半導体装置の製造方法であって、
請求項1〜5に記載のダイシング・ダイボンドフィルムを用意し、
前記ダイボンドフィルム上に半導体ウェハを圧着する工程と、
前記半導体ウェハを前記ダイボンドフィルムと共にダイシングすることにより半導体チップを形成する工程と、
前記半導体チップを前記ダイボンドフィルムと共に、前記粘着剤層から剥離する工程とを含み、
前記半導体ウェハの圧着工程から半導体チップの剥離工程までは、前記粘着剤層に紫外線を照射することなく行うことを特徴とする半導体装置の製造方法。
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- 2008-12-24 US US12/863,020 patent/US20110053346A1/en not_active Abandoned
- 2008-12-24 KR KR1020107024845A patent/KR101417205B1/ko active IP Right Grant
- 2008-12-24 CN CN2008801250030A patent/CN101911260B/zh active Active
- 2008-12-24 KR KR1020107008290A patent/KR101169525B1/ko active IP Right Grant
- 2008-12-24 EP EP08870968A patent/EP2242089A4/en not_active Withdrawn
- 2008-12-24 WO PCT/JP2008/073416 patent/WO2009090838A1/ja active Application Filing
- 2008-12-26 TW TW097151064A patent/TWI433907B/zh active
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Also Published As
Publication number | Publication date |
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WO2009090838A1 (ja) | 2009-07-23 |
EP2242089A4 (en) | 2011-08-03 |
TW200942593A (en) | 2009-10-16 |
EP2242089A1 (en) | 2010-10-20 |
CN101911260B (zh) | 2013-01-23 |
TWI433907B (zh) | 2014-04-11 |
KR101417205B1 (ko) | 2014-07-09 |
KR101169525B1 (ko) | 2012-07-27 |
US20110053346A1 (en) | 2011-03-03 |
CN101911260A (zh) | 2010-12-08 |
KR20100045530A (ko) | 2010-05-03 |
KR20100133000A (ko) | 2010-12-20 |
JP2009170787A (ja) | 2009-07-30 |
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