CN103992755A - 膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置 - Google Patents

膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置 Download PDF

Info

Publication number
CN103992755A
CN103992755A CN201410054163.8A CN201410054163A CN103992755A CN 103992755 A CN103992755 A CN 103992755A CN 201410054163 A CN201410054163 A CN 201410054163A CN 103992755 A CN103992755 A CN 103992755A
Authority
CN
China
Prior art keywords
tackiness agent
membranaceous tackiness
membranaceous
dicing tape
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410054163.8A
Other languages
English (en)
Inventor
菅生悠树
木村雄大
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of CN103992755A publication Critical patent/CN103992755A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
    • C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29388—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29417—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29424—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29444—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29447—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29455—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H01L2224/85207—Thermosonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive
    • Y10T428/1405—Capsule or particulate matter containing [e.g., sphere, flake, microballoon, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)

Abstract

本发明提供可以防止对半导体晶片的热影响、可以抑制半导体晶片的翘曲的膜状胶粘剂、带有膜状胶粘剂的切割胶带及半导体装置的制造方法。本发明涉及一种膜状胶粘剂，其含有热塑性树脂及导电性粒子，所述膜状胶粘剂在40℃下粘贴于镜面硅晶片后，在25℃下测定的密合力为0.5N/10mm以上。

Description

膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置
技术领域
本发明涉及膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置。
背景技术
在半导体装置的制造中，关于将半导体元件与金属引线框等粘接的方法(所谓的芯片接合法)，从以往的金-硅共晶起始发展为利用焊料、树脂糊剂方法。现在正在利用使用导电性树脂糊剂的方法。
但是，使用树脂糊剂的方法存在如下问题：由于孔隙导致导电性下降，或者树脂糊剂的厚度不均一，由于树脂糊剂的挤出而导致焊盘受到污染。为了解决这些问题，有时使用膜状胶粘剂代替树脂糊剂。
例如，专利文献1中提出了一种胶粘膜，所述胶粘膜通过配合特定的聚酰亚胺树脂，从而能够在低温下进行芯片接合时的热处理。另外，专利文献2中提出了一种胶粘膜，所述胶粘膜通过配合玻璃化转变温度为-10～50℃的丙烯酸共聚物等来赋予挠性，且作业性良好。
现有技术文献
专利文献
专利文献1：日本特开平6-145639号公报
专利文献2：日本专利第4137827号公报
发明内容
发明所要解决的课题
但是，出于增加容量的目的，近年来的半导体装置已轻薄短小化，单片化前的半导体元件(半导体晶片)的厚度为100μm以下，非常薄，因此半导体晶片易翘曲，其操作也难。
专利文献2的胶粘膜由于使用了玻璃化转变温度为-10℃以上的丙烯酸共聚物，因此弹性模量高，为了与半导体晶片牢固地粘贴，需要在高温下进行粘贴。但是，若在高温下进行粘贴，则由于其热，因此半导体晶片会发生翘曲。另外，专利文献2中对于半导体晶片的操作性进行了研究。另外，专利文献2中由于单独对半导体芯片进行拾取，因此也存在产生芯片破裂、芯片缺损的可能性。
本发明的目的在于，解决上述课题，提供可以防止对半导体晶片的热影响、可以抑制半导体晶片的翘曲的膜状胶粘剂、带有膜状胶粘剂的切割胶带及半导体装置的制造方法。
用于解决课题的方法
本发明涉及一种膜状胶粘剂，其含有热塑性树脂及导电性粒子，所述膜状胶粘剂在40℃下粘贴于镜面硅晶片后，在25℃下测定的密合力为0.5N/10mm以上。所述膜状胶粘剂由于可以在40℃左右的低温下与半导体晶片良好地进行粘接，因此不需要在高温下进行粘贴。因此，可以防止对半导体晶片的热影响、可以抑制半导体晶片的翘曲。
所述热塑性树脂的玻璃化转变温度优选为-40～-10℃。由此，可以良好地得到低温粘贴性。
所述膜状胶粘剂优选含有固化性树脂。由此，可以提高热稳定性。
所述固化性树脂优选含有在25℃下为固态的固化性树脂及在25℃下为液态的固化性树脂，且在25℃下为固态的固化性树脂的重量/在25℃下为液态的固化性树脂的重量所表示的重量比率为49/51～10/90。由此，可以良好地得到低温粘贴性。
所述膜状胶粘剂的厚度优选为5～100μm。由此，与半导体晶片等的粘接面积稳定。另外，可以抑制膜状胶粘剂的挤出。
25℃下的储能模量优选为5MPa以上。由此，可以良好地进行拾取。
所述膜状胶粘剂优选作为芯片贴装膜而被使用。
本发明还涉及一种带有膜状胶粘剂的切割胶带，其中，在切割胶带上层叠有所述膜状胶粘剂。
若在半导体装置的制造中使用所述带有膜状胶粘剂的切割胶带，则可以对粘贴于带有膜状胶粘剂的切割胶带的状态的半导体晶片进行操作，因此可以减少对半导体晶片单体进行操作的机会。因此，即使是近年来的薄型半导体晶片，也可以良好地进行操作。另外，在使用所述带有膜状胶粘剂的切割胶带的情况下，是将半导体晶片粘贴于膜状胶粘剂，由于使用了所述膜状胶粘剂，因此可以抑制半导体晶片的翘曲。
就所述带有膜状胶粘剂的切割胶带而言，在剥离温度为25℃、剥离速度为300mm/min的条件下，从所述切割胶带剥离所述膜状胶粘剂时的剥离力优选为0.01～3.00N/20mm。由此，可以防止芯片飞散，并且可以良好地进行拾取。
本发明还涉及一种半导体装置的制造方法，其包括使用所述膜状胶粘剂将半导体芯片贴装于被粘物的工序。
本发明还涉及一种半导体装置，其通过所述制造方法而得到。
发明效果
根据本发明，可以在40℃左右的低温下将膜状胶粘剂粘贴于半导体晶片，因此可以防止对半导体晶片的热影响、可以抑制半导体晶片的翘曲。
附图说明
图1是本发明的一个实施方式所涉及的带有膜状胶粘剂的切割胶带的剖面示意图。
图2是本发明的另一实施方式所涉及的带有膜状胶粘剂的切割胶带的剖面示意图。
图3是用于说明本发明的半导体装置的一个制造方法的图。
具体实施方式
本发明的膜状胶粘剂在40℃下粘贴于镜面硅晶片后，在25℃下测定的密合力为0.5N/10mm以上、优选为0.6N/10mm以上、更优选为4N/10mm以上。若为0.5N/10mm以上，则膜状胶粘剂可以在40℃左右的低温下与半导体晶片良好地粘接，因此可以防止对半导体晶片的热影响、可以抑制半导体晶片的翘曲。另一方面，若小于0.5N/10mm，则密合力低，具有半导体晶片从膜状胶粘剂剥离的可能性。密合力的上限没有特别限定，但例如为10N/10mm以下。
在本说明书中，密合力是指将膜状胶粘剂从镜面硅晶片剥离时的剥离力，可以利用实施例所述的方法进行测定。
膜状胶粘剂的25℃下的储能模量优选为5MPa以上、更优选为2×102MPa以上。若小于5MPa，则与切割胶带的密合力增高，具有拾取性下降的倾向。膜状胶粘剂的25℃下的储能模量优选为5×103MPa以下、更优选为3×103MPa以下、进一步优选为2.5×103MPa以下。若超过5×103MPa，则不易进行结合。
储能模量可以利用实施例所述的方法进行测定。
膜状胶粘剂的100℃下的储能模量优选为0.01MPa以上、更优选为0.05MPa以上。若为0.01MPa以上，则膜状胶粘剂在芯片贴装时不易挤出。另一方面，膜状胶粘剂的100℃下的储能模量优选为1MPa以下、更优选为0.8MPa以下。若为1MPa以下，则在芯片贴装时不易咬入孔隙，易于实现稳定的芯片贴装。
膜状胶粘剂的表面粗糙度(Ra)优选为0.1～1000nm。若小于0.1nm，则不易结合。另一方面，若超过1000nm，则具有低温粘贴性下降的可能性。另外，具有芯片贴装时与被粘物的粘贴性也下降的可能性。
在175℃下加热5小时后、在测定温度25℃下的电阻率越低则越为优选，例如为1×10-2Ω·m以下。若为1×10-2Ω·m，则导电性好，可以应对小型、高密度安装。
在175℃下加热5小时后、在测定温度25℃下的导热率越高则越为优选，例如为0.5W/m·K以上。若为0.5W/m·K以上，则散热性好，可以应对小型、高密度安装。另一方面，若小于0.5W/m·K，则散热性差，热滞留，具有导电性变差的可能性。
膜状胶粘剂含有热塑性树脂。作为热塑性树脂，可举出天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6或尼龙6,6等聚酰胺树脂、苯氧基树脂、丙烯酸系树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者氟树脂等。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸系树脂。
作为上述丙烯酸系树脂，没有特别限制，可以列举以一种或两种以上的丙烯酸酯或甲基丙烯酸酯为成分的聚合物(丙烯酸系共聚物)等，上述丙烯酸酯或甲基丙烯酸酯具有碳原子数30以下、特别是碳原子数4～18的直链或支链烷基。作为上述烷基，可以列举例如：甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
另外，作为形成聚合物(丙烯酸系共聚物)的其他单体，没有特别限制，可以列举例如：丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体；马来酸酐或衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或(4-羟甲基环己基)-甲基丙烯酸酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙基酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；或者2-羟基乙基丙烯酰基磷酸酯等含磷酸基单体。
丙烯酸系树脂中，优选重均分子量为10万以上的树脂、更优选30万～300万的树脂、进一步优选50万～200万的树脂。其原因在于，若在上述数值范围内，则粘接性及耐热性优异。需要说明的是，重均分子量为通过GPC(凝胶渗透色谱法)进行测定、并通过聚苯乙烯换算而计算出的值。
热塑性树脂的玻璃化转变温度优选为-40℃以上、更优选为-35℃以上、进一步优选为-25℃以上。若小于-40℃，则膜状胶粘剂变得过粘，具有过度粘附于切割胶带从而拾取性变差的倾向。另外，热塑性树脂的玻璃化转变温度优选为-10℃以下、更优选为-11℃以下。若超过-10℃，则弹性模量变高，具有不易在40℃左右的低温下将膜状胶粘剂粘贴于半导体晶片(低温粘贴性下降)的倾向。
在本说明书中，热塑性树脂的玻璃化转变温度是指利用Fox公式求出的理论值。
另外，作为求出玻璃化转变温度的其他方法，还有如下方法：由利用差示扫描量热计(DSC)测定的最大吸热峰时的温度求出热塑性树脂的玻璃化转变温度。具体而言，使用差示扫描量热计(TA Instruments制造，“Q-2000”)，在比预测的试样的玻璃化转变温度(预测温度)高约50℃的温度下将待测试样加热10分钟，然后冷却到比预测温度低50℃的温度进行预处理，然后，在氮气氛下，以5℃/分钟的升温速度升温并测定吸热起始点温度，将其作为玻璃化转变温度。
膜状胶粘剂优选含有热固化性树脂等固化性树脂。由此，可以提高热稳定性。
作为固化性树脂，可举出酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、硅酮树脂、或热固化性聚酰亚胺树脂等。特别优选腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外，作为环氧树脂的固化剂，优选酚醛树脂。
环氧树脂没有特别限制，可以使用例如：双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛型、邻甲酚酚醛型、三羟苯基甲烷型、四羟苯基乙烷型等二官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂中，特别优选酚醛型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂或四羟苯基乙烷型环氧树脂。其原因在于，这些环氧树脂富于与作为固化剂的酚醛树脂的反应性，并且耐热性等优异。
酚醛树脂作为环氧树脂的固化剂起作用，可举出例如：苯酚酚醛树脂、苯酚芳烷基树脂、甲酚酚醛树脂、叔丁基苯酚酚醛树脂、壬基苯酚酚醛树脂等线性酚醛型酚醛树脂、甲阶酚醛型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚醛树脂中特别优选苯酚酚醛树脂、苯酚芳烷基树脂。其原因在于可以提高半导体装置的连接可靠性。
环氧树脂与酚醛树脂的配合比例，例如以相对于环氧树脂成分中的环氧基1当量、酚醛树脂中的羟基为0.5～2.0当量的方式进行配合是适当的。更适当的是0.8～1.2当量。即，其原因在于，若两者的配比例在上述范围以外，则固化反应不能充分进行，固化物的特性容易变差。
膜状胶粘剂优选含有在25℃下为固态的固化性树脂及在25℃下为液态的固化性树脂。由此，可以得到良好的低温粘贴性。
在本说明书中，在25℃下为液态是指在25℃下粘度小于5000Pa·s。另一方面，在25℃下为固态是指在25℃下粘度为5000Pa·s以上。
需要说明的是，粘度可以使用Thermo Scientific公司制的型号HAAKE Roto VISCO1进行测定。
膜状胶粘剂中，在25℃下为固态的固化性树脂的重量/在25℃下为液态的固化性树脂的重量优选为49/51～10/90、更优选为45/55～40/60。
若在25℃下为固态的固化性树脂的比率大于49/51，则具有不易在40℃左右的低温下将膜状胶粘剂粘贴于半导体晶片(低温粘贴性下降)的倾向。另一方面，若在25℃下为固态的固化性树脂的比率小于10/90，则膜状胶粘剂变得过粘，具有过度粘附于切割胶带从而拾取性变差的倾向。
膜状胶粘剂中的热塑性树脂及固化性树脂的总含量优选为5重量%以上、更优选为10重量%以上。若为5重量%以上，则容易保持作为膜的形状。另外，热塑性树脂及固化性树脂的总含量优选为70重量%以下、更优选为60重量%以下。若为70重量%以下，则导电性粒子可适当地表现出导电性。
膜状胶粘剂中，热塑性树脂的重量/固化性树脂的重量优选为50/50～10/90、更优选为40/60～15/85。若热塑性树脂的比率大于50/50，则具有热稳定性变差的倾向。另一方面，若热塑性树脂的比率小于10/90，则具有不易膜化的倾向。
膜状胶粘剂含有导电性粒子。作为导电性粒子，没有特别限定，可举出镍粒子、铜粒子、银粒子、金粒子、铝粒子、炭黑粒子、作为纤维状粒子的碳纳米管、以导电性材料包覆核粒子的表面而成的粒子等。
核粒子可以是导电性、非导电性中的任意一种，可以使用例如玻璃粒子等。作为包覆核粒子的表面的导电性材料，可以使用镍、铜、银、金、铝等金属。
导电性粒子的形状没有特别限定，可以使用例如薄片状、针状、丝状、球状、鳞片状的形状等。其中，从分散性、充填率的提高方面考虑，优选薄片状。
导电性粒子的平均粒径没有特别限定，相对于膜状胶粘剂的厚度而优选为0.001倍以上(膜状胶粘剂的厚度×0.001以上)、更优选为0.1倍以上。若小于0.001倍，则不易形成导电通道，具有导电性不稳定的倾向。另外，导电性粒子的平均粒径相对于膜状胶粘剂的厚度而优选为1倍以下(膜状胶粘剂的厚度以下)、更优选为0.8倍以下。若超过1倍，则具有引起芯片破裂的危险性。
需要说明的是，导电性粒子的平均粒径为利用光度式粒度分布计(HORIBA制、装置名；LA-910)求出的值。
导电性粒子的比重优选为0.7以上、更优选为1以上。若小于0.7，则导电性粒子在制作胶粘剂组合物溶液(清漆)时浮起，具有导电性粒子的分散变得不均一的可能性。另外，导电性粒子的比重优选为22以下、更优选为21以下。若超过22，则导电性粒子容易沉降，具有导电性粒子的分散变得不均一的可能性。
膜状胶粘剂中导电性粒子的含量优选为30重量%以上、更优选为40重量%以上。若小于30重量%，则具有不易形成导电通道的倾向。另外，导电性粒子的含量优选为95重量%以下、更优选为94重量%以下。若超过95重量%，则具有不易膜化的倾向。另外，具有与晶片的密合力下降的倾向。
膜状胶粘剂除上述成分以外还可以适当含有膜制造中通常使用的配合剂，例如交联剂等。
本发明的膜状胶粘剂可以利用通常的方法进行制造。例如，制作含有上述各成分的胶粘剂组合物溶液，在基材隔离件上以达到规定厚度的方式涂布胶粘剂组合物溶液而形成涂布膜后，使该涂布膜干燥，由此可以制造膜状胶粘剂。
作为胶粘剂组合物溶液中使用的溶剂，没有特别限定，优选可以使上述各成分均一地溶解、混炼或分散的有机溶剂。可举出例如二甲基甲酰胺、二甲基乙酰胺、N-甲基吡咯烷酮、丙酮、甲乙酮、环己酮等酮系溶剂、甲苯、二甲苯等。涂布方法没有特别限定。作为溶剂涂敷的方法，可举出例如狭缝式涂布机、凹版涂布机、辊涂机、反转涂布机、逗点型涂布机、Dr.Pipe涂布机、丝网印刷等。其中，从涂布厚度的均一性高的观点考虑，优选狭缝式涂布机。
作为基材隔离件，可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或者利用氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行表面涂布后的塑料膜或纸等。作为胶粘剂组合物溶液的涂布方法，可举出例如辊涂敷、丝网涂敷、凹版涂敷等。另外，涂布膜的干燥条件没有特别限定，例如可以在干燥温度70～160℃、干燥时间1～5分钟的条件下进行。
作为本发明的膜状胶粘剂的制造方法，例如也适合采用如下的方法等：将上述各成分用混合机混合，将所得到的混合物压制成形来制造膜状胶粘剂。作为混合机，可举出行星式混合机等。
膜状胶粘剂的厚度没有特别限定，优选为5μm以上、更优选为15μm以上。若小于5μm，则有时产生无法与出现翘曲的半导体晶片或半导体芯片粘接部位，从而粘接面积变得不稳定。另外，膜状胶粘剂的厚度优选为100μm以下、更优选为50μm以下。若超过100μm，则有时膜状胶粘剂由于芯片贴装的载荷而过度挤出，从而污染焊盘。
本发明的膜状胶粘剂可以适合用于半导体装置的制造。其中，特别适合作为将引线框等被粘物与半导体芯片粘接的(进行芯片贴装的)芯片贴装膜使用。作为被粘物，可举出引线框、中介层(インターポーザ)、半导体芯片等。其中，优选引线框。
本发明的膜状胶粘剂优选与切割胶带一体地使用。即，优选以带有膜状胶粘剂的切割胶带的形态使用。若以该形态使用，则可以对粘贴于带有膜状胶粘剂的切割胶带的状态的半导体晶片进行操作，因此可以减少对半导体晶片单体进行操作的机会，操作性良好。因此，即使是近年来的薄型的半导体晶片，也可以良好地进行操作。另外，在以该形态进行使用的情况下，是将半导体晶片粘贴于膜状胶粘剂，由于使用了上述的膜状胶粘剂，因此可以抑制半导体晶片的翘曲。
［带有膜状胶粘剂的切割胶带］
以下对本发明的带有膜状胶粘剂的切割胶带进行说明。图1是本发明的一个实施方式所涉及的带有膜状胶粘剂的切割胶带的剖面示意图。图2是本发明的另一实施方式所涉及的带有膜状胶粘剂的切割胶带的剖面示意图。
如图1所示，带有膜状胶粘剂的切割胶带10具有在切割胶带11上层叠有膜状胶粘剂3的构成。切割胶带11通过在基材1上层叠粘合剂层2而构成，膜状胶粘剂3设置在该粘合剂层2上。另外，本发明如图2所示的带有膜状胶粘剂的切割胶带12那样，也可以是仅在工件(半导体晶片等)粘贴部分处形成有膜状胶粘剂3’的构成。
基材1成为带有膜状胶粘剂的切割胶带10、12的强度母体，优选具有紫外线透射性。作为基材1，可举出例如低密度聚乙烯、直链状聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯基硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素系树脂、硅酮树脂、金属(箔)、纸等。
为了提高与邻接层的密合性、保持性等，基材1的表面可以实施惯用的表面处理，例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化放射线处理等化学或物理处理、利用底涂剂(例如，后述的粘合物质)的涂敷处理。
基材1的厚度没有特别限制，可以适当确定，一般为5μm～200μm左右。
粘合剂层2的形成中使用的粘合剂没有特别限制，例如，可以使用丙烯酸系粘合剂、橡胶系粘合剂等一般的压敏性胶粘剂。作为压敏性胶粘剂，从半导体晶片或玻璃等避忌污染的电子部件的、利用超纯水或醇等有机溶剂的清洁洗涤性等方面考虑，优选以丙烯酸系聚合物为基础聚合物的丙烯酸系粘合剂。
作为丙烯酸系聚合物，可举出例如使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳原子数1～30、特别是碳原子数4～18的直链状或支链状的烷基酯等)以及(甲基)丙烯酸环烷基酯(例如，环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸系聚合物等。需要说明的是，(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯，本发明的“(甲基)”全部具有同样的含义。
为了改善凝聚力和耐热性等，丙烯酸系聚合物可以根据需要而含有能够与上述(甲基)丙烯酸烷基酯或环烷基酯共聚的其他单体成分所对应的单元。作为这样的单体成分，可以列举例如：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体；马来酸酐、衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、甲基丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙基酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；2-羟基乙基丙烯酰基磷酸酯等含磷酸基单体；丙烯酰胺；丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。
另外，为了进行交联，丙烯酸系聚合物也可以根据需要含有多官能性单体等作为共聚用单体成分。作为这样的多官能性单体，可举出例如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能性单体也可以使用一种或者两种以上。从粘合特性等观点考虑，多官能性单体的使用量优选为全部单体成分的30重量%以下。
上述丙烯酸系聚合物可以通过将单一单体或者两种以上单体混合物聚合而得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止污染洁净的被粘物等方面考虑，优选低分子量物质的含量小。从该观点考虑，丙烯酸系聚合物的数均分子量优选为30万以上，进一步优选为40万～300万左右。
另外，为了提高作为基础聚合物的丙烯酸系聚合物等的数均分子量，上述粘合剂中可以适当使用外部交联剂。作为外部交联方法的具体方法，可举出：添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺系交联剂等所谓的交联剂进行反应的方法。在使用外部交联剂的情况下，其使用量可以根据与应交联的基础聚合物的平衡、以及作为粘合剂的使用用途来适当确定。一般而言，相对于上述基础聚合物100重量份，优选配合5重量份左右以下，更优选配合0.1～5重量份。另外，根据需要，除上述成分之外，在粘合剂中还可以使用现有公知的各种增粘剂、抗老化剂等添加剂。
粘合剂层2可以利用放射线固化型粘合剂形成。放射线固化型粘合剂可以通过照射紫外线等放射线使交联度增大，从而易于使其粘合力下降。
通过仅对图1所示的粘合剂层2的对应于工件粘贴部分的部分2a照射放射线，可以设置与其它部分2b的粘合力的差。此时，利用未固化的放射线固化型粘合剂而形成的上述部分2b与膜状胶粘剂3粘合，可以确保切割时的保持力。
另外，通过配合图2所示的膜状胶粘剂3’使放射线固化型的粘合剂层2固化，可以形成粘合力显著下降的上述部分2a。此时，可以将晶片环固定于利用未固化的放射线固化型粘合剂而形成的上述部分2b。
即，利用放射线固化型粘合剂形成粘合剂层2时，优选对上述部分2a进行放射线照射，使得粘合剂层2中上述部分2a的粘合力＜其他部分2b的粘合力。
放射线固化型粘合剂可以没有特别限制地使用具有碳-碳双键等放射线固化性官能团、并且显示出粘合性的粘合剂。作为放射线固化型粘合剂，可例示例如：在上述丙烯酸系粘合剂、橡胶系粘合剂等通常的压敏性粘合剂中配合有放射线固化性的单体成分、低聚物成分的添加型的放射线固化型粘合剂。
作为所配合的放射线固化性的单体成分，可以列举例如：氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外，放射线固化性的低聚物成分可举出氨基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各种低聚物，其分子量在100～30000左右的范围内是适当的。放射线固化性的单体成分或低聚物成分的配合量，可以根据上述粘合剂层的种类来适当确定能够使粘合剂层的粘合力下降的量。一般而言，相对于构成粘合剂的丙烯酸系聚合物等基础聚合物100重量份，例如为5～500重量份、优选40～150重量份左右。
另外，作为放射线固化型粘合剂，除上述说明过的添加型的放射线固化型粘合剂以外，还可举出：使用在聚合物侧链或者主链中或主链末端具有碳-碳双键的聚合物作为基础聚合物的内在型的放射线固化型粘合剂。就内在型的放射线固化型粘合剂而言，其不需要含有或者不大量含有作为低分子成分的低聚物成分等，因此低聚物成分等不会经时地在粘合剂中移动，从而可以形成稳定的层结构的粘合剂层，因此优选。
上述具有碳-碳双键的基础聚合物可以没有特别限制地使用具有碳-碳双键、并且具有粘合性的基础聚合物。作为这样的基础聚合物，优选以丙烯酸系聚合物作为基本骨架的聚合物。作为丙烯酸系聚合物的基本骨架，可举出上述例示的丙烯酸系聚合物。
在上述丙烯酸系聚合物中引入碳-碳双键的方法没有特别限制，可以采用各种方法，但在聚合物侧链上引入碳-碳双键在分子设计方面比较容易。例如可举出下述方法：预先使具有官能团的单体与丙烯酸系聚合物共聚后，使具有能够与该官能团反应的官能团、及碳-碳双键的化合物，在保持碳-碳双键的放射线固化性的状态下进行缩合或加成反应。
作为这些官能团的组合例，可以列举：羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中，从容易追踪反应的观点考虑，优选羟基与异氰酸酯基的组合。另外，只要是通过这些官能团的组合而生成上述具有碳-碳双键的丙烯酸系聚合物的组合，则官能团可以在丙烯酸系聚合物和上述化合物中的任意一侧，就上述优选组合而言，优选丙烯酸系聚合物具有羟基、上述化合物具有异氰酸酯基的情形。此时，作为具有碳-碳双键的异氰酸酯化合物，可举出例如甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。另外，作为丙烯酸系聚合物，可以使用将上述例示的含羟基单体、2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚系化合物等共聚而得到的丙烯酸系聚合物。
上述内在型的放射线固化型粘合剂，可以单独使用上述具有碳-碳双键的基础聚合物(特别是丙烯酸系聚合物)，也可以在不损害特性的程度下配合上述放射线固化性的单体成分、低聚物成分。放射线固化性的低聚物成分等通常相对于基础聚合物100重量份在30重量份的范围内，优选0～10重量份的范围。
上述放射线固化型粘合剂4中，在通过紫外线等而固化的情况下含有光聚合引发剂。作为光聚合引发剂，可举出例如：4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2’-二甲氧基-2-苯基苯乙酮、2,2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1-酮等苯乙酮系化合物；苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚系化合物；苯偶酰二甲基缩酮等缩酮系化合物；2-萘磺酰氯等芳香族磺酰氯系化合物；1-苯酮-1,1-丙二酮-2-(邻乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮系化合物；樟脑醌；卤代酮；酰基氧化膦；酰基膦酸酯等。相对于构成粘合剂的丙烯酸系聚合物等基础聚合物100重量份，光聚合引发剂的配合量例如为0.05重量份～20重量份左右。
另外，作为放射线固化型粘合剂，可举出例如日本特开昭60-196956号公报中公开的橡胶系粘合剂、丙烯酸系粘合剂等，上述橡胶系粘合剂、丙烯酸系粘合剂等包含：具有两个以上不饱和键的加聚性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物；和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐系化合物等光聚合引发剂。
上述放射线固化型的粘合剂层2中，可以根据需要含有通过放射线照射而着色的化合物。通过在粘合剂层2中含有通过放射线照射而着色的化合物，可以仅使被放射线照射后的部分着色。通过放射线照射而着色的化合物为，在放射线照射前为无色或浅色、但通过紫外线照射而变为有色的化合物，可举出例如无色染料(ロイコ染料)。通过放射线照射而着色的化合物的使用比例可以适当设定。
粘合剂层2的厚度没有特别限制，从兼具防止芯片切断面的缺损和胶粘层的固定保持等方面考虑，优选为1μm～50μm左右。更优选2μm～30μm、进一步优选5μm～25μm。
带有膜状胶粘剂的切割胶带10、12的膜状胶粘剂3、3’优选用间隔件来保护(未图示)。间隔件具有作为在供与实际应用之前保护膜状胶粘剂3、3’的保护材料的功能。当向带有膜状胶粘剂的切割胶带的膜状胶粘剂3、3’上粘贴工件时，将间隔件剥离。作为间隔件，可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或者利用氟系剥离剂、长链烷基丙烯酸酯系剥离剂等剥离剂进行表面涂布后的塑料薄膜或纸等。
带有膜状胶粘剂的切割胶带10、12可以利用通常的方法进行制造。例如，通过将切割胶带11的粘合剂层2与膜状胶粘剂3、3’贴合，从而可以制造出带有膜状胶粘剂的切割胶带10、12。
在剥离温度为25℃、剥离速度为300mm/min的条件下，从切割胶带11剥离膜状胶粘剂3、3’时的剥离力为0.01～3.00N/20mm。若小于0.01N/20mm，则具有在切割时产生芯片飞散的可能性。另一方面，若超过3.00N/20mm，则具有不易拾取的倾向。
该剥离力可以通过实施例中记载的方法进行测定。
［半导体装置的制造方法］
本发明的半导体装置的制造方法包括使用膜状胶粘剂将半导体芯片贴装于被粘物的工序。
以下，对于本发明的半导体装置的制造方法，边参照图3，边以使用带有膜状胶粘剂的切割胶带10来制造半导体装置情况为例进行说明。图3为用于说明本发明的半导体装置的一个制造方法的图。
首先，将半导体晶片4压接在带有膜状胶粘剂的切割胶带10中的膜状胶粘剂3的半导体晶片粘贴部分3a上，并将其粘接保持而固定(粘贴工序)。边用压接辊等按压工具进行按压，边进行本工序。此时，可以在40℃左右的低温下进行压接。具体而言，压接温度(粘贴温度)优选为35℃以上、更优选为37℃以上。压接温度的上限优选较低，优选为50℃以下、更优选为45℃以下、进一步优选为43℃以下。由于可以在40℃左右的低温下而粘贴于半导体晶片4，因此可以防止对半导体晶片4的热影响、可以抑制半导体晶片4的翘曲。
另外，压力优选为1×105～1×107Pa、更优选为2×105～8×106Pa。另外，粘贴时间优选为1秒～5分钟、更优选为1分钟～3分钟。
接着，进行半导体晶片4的切割。由此，将半导体晶片4切割为规定的尺寸而将其单片化，制造半导体芯片5。切割例如可以按照常法从半导体晶片4的电路面侧进行。另外，该工序中，例如可以采用切入到带有膜状胶粘剂的切割胶带10的称为全切(フルカット)的切割方式。作为本工序中使用的切割装置，没有特别限定，可以使用以往公知的装置。另外，半导体晶片4通过带有膜状胶粘剂的切割胶带10进行粘接固定，因此可以抑制芯片缺损、芯片飞散，并且也可以抑制半导体晶片4的破损。
为了将粘接固定于带有膜状胶粘剂的切割胶带10的半导体芯片5剥离，进行半导体芯片5的拾取。拾取的方法没有特别限制，可以使用现有公知的各种方法。例如可举出：用针从带有膜状胶粘剂的切割胶带10侧将各个半导体芯片5向上推，通过拾取装置拾取被上推的半导体芯片5的方法等。
在此，在粘合剂层2为紫外线固化型的情况下，在对该粘合剂层2照射紫外线后进行拾取。由此，粘合剂层2对膜状胶粘剂3的粘合力下降，半导体芯片5的剥离变得容易。结果，能够在不损伤半导体芯片5的情况下进行拾取。照射紫外线时的照射强度、照射时间等条件没有特别限定，可以根据需要适当设定。
拾取的半导体芯片5通过膜状胶粘剂3粘接固定于被粘物6(芯片贴装)。
芯片贴装温度优选为80℃以上、更优选为90℃以上。另外，芯片贴装温度优选为150℃以下、更优选为130℃以下。通过设定为150℃以下从而可以防止芯片贴装后的翘曲的产生。
接着通过对膜状胶粘剂3进行加热处理，使半导体芯片5与被粘物6粘接。
加热处理的温度优选为80℃以上、更优选为170℃以上。加热处理的温度优选为200℃以下、更优选为180℃以下。若加热处理的温度为上述范围，则可以良好地进行粘接。另外，加热处理的时间可以适当设定。
接着，进行用焊线7将被粘物6的端子部(内部引线)的前端与半导体芯片5上的电极焊盘(未图示)电连接的焊线接合工序。作为上述焊线7，可以使用例如金线、铝线或铜线等。进行焊线接合时的温度优选为80℃以上、更优选为120℃以上，该温度优选为250℃以下、更优选为175℃以下。另外，其加热时间进行几秒～几分钟(例如1秒～1分钟)。接线在加热达到上述温度范围的状态下、通过并用超声波所产生的振动能与加压所产生的压接能来进行。
接着，进行利用密封树脂8将半导体芯片5密封的密封工序。该工序是为了保护搭载于被粘物6的半导体芯片5、焊线7而进行的。该工序通过用模具将密封用树脂成形来进行。作为密封树脂8，例如使用环氧系树脂。树脂密封时的加热温度优选为165℃以上、更优选为170℃以上，该加热温度优选为185℃以下、更优选为180℃以下。
可以根据需要对密封物进一步进行加热(后固化工序)。由此，可以将密封工序中固化不充分的密封树脂8完全固化。加热温度可以适当设定。
如上所述，在使用带有膜状胶粘剂的切割胶带的情况下，通过包括以下工序的方法可以制造半导体装置，上述工序为：将带有膜状胶粘剂的切割胶带的膜状胶粘剂和半导体晶片贴合的工序(I)；切割半导体晶片而形成半导体芯片的工序(II)；将由工序(II)形成的半导体芯片与膜状胶粘剂一起拾取的工序(III)；及将由工序(III)拾取的半导体芯片通过膜状胶粘剂芯片贴装于被粘物的工序(IV)。
实施例
以下使用实施例对本发明进行详细说明，本发明只要不超出其主旨则不限定于以下的实施例。另外，各例中，若无特别说明，则份均为重量基准。
对实施例中使用的成分进行说明。
ARONTACK S-2060：东亚合成(株)制的ARONTACK S-2060(丙烯酸系共聚物、Mw：55万、玻璃化转变温度：-22℃)
Teisan Resin SG-70L：Nagase ChemteX(株)制的Teisan ResinSG-70L(丙烯酸系共聚物、Mw：90万、玻璃化转变温度：-13℃)
Teisan Resin SG-P3：Nagase ChemteX(株)制的Teisan Resin SG-P3(丙烯酸系共聚物、Mw：85万、玻璃化转变温度：12℃)
EOCN-1020-4：日本化药(株)制的EOCN-1020-4(在25℃下为固态的环氧树脂)
JER828：三菱化学(株)制的JER828(在25℃下为液态的环氧树脂)
MEH-7851SS：明和化成公司制的MEH-7851SS(苯酚芳烷基树脂)
1400YM：三井金属矿业(株)制的1400YM(铜粉、平均粒径4μm、比重8.9)
ES-6000：Potters Ballotini(株)制的ES-6000(银玻璃微珠、平均粒径6μm、比重3.9～4.0)
AUP-1000：大崎工业(株)制的AUP-1000(金粉末、平均粒径1μm、比重19.3)
［膜状胶粘剂及带有膜状胶粘剂的切割胶带的制作］
(实施例1～3及比较例1～3)
按照表1所述的配比，将表1中记载的各成分及溶剂(甲乙酮)投入混合搅拌机(KEYENCE制HM-500)的搅拌釜，以搅拌模式，搅拌、混合3分钟。将所得到的清漆用狭缝式涂布机涂布于脱模处理膜(三菱树脂(株)制的MRA50)后，使其干燥，制成膜状胶粘剂。
将所得到的膜状胶粘剂切出为直径230mm的圆形，在25℃下粘贴到切割胶带(日东电工(株)制的P2130G)的粘合剂层上，制成带有膜状胶粘剂的切割胶带。
(实施例4～6及比较例4～6)
按照表2所述的配比，将表2中记载的各成分投入行星式混合机(PRIMIX(株)制的T.K.HIVIS MIX“P-03”)的搅拌釜，在90℃下，搅拌、混合20分钟。通过成形压制机(北川精机(株)VH1-1572)以120℃、压力1kg/cm2对所得到的混合物进行加压，制成膜状胶粘剂。
将所得到的膜状胶粘剂切出为直径230mm的圆形，在25℃下粘贴到切割胶带(日东电工(株)制的P2130G)的粘合剂层上，制成带有膜状胶粘剂的切割胶带。
［镜面硅晶片的制作］
使用晶圆磨背机((株)DISCO制的DFG-8560)，进行磨削以使硅晶片(信越化学工业(株)制、厚度0.6mm)的厚度达到0.05mm，制作出镜面硅晶片。
［评价］
使用所得到的膜状胶粘剂、带有膜状胶粘剂的切割胶带、镜面硅晶片进行以下的评价。结果如表1及表2所示。
［低温粘贴性评价(1)］
使用晶圆贴片机(日东精机(株)制的MA-3000III)以10mm/min的粘贴速度、40℃的粘贴温度将镜面硅晶片贴合于带有膜状胶粘剂的切割胶带的膜状胶粘剂上。
将通过贴合得到的所得物以镜面硅晶片为下侧(地面侧)的方式进行配置，即使一部分镜面硅晶片从膜状胶粘剂脱落的情况也判定为×，将没有脱落的情况判定为○。
［低温粘贴性评价(2)］
出于保持目的而将聚酯粘合带(日东电工(株)制的BT-315)贴合于带有膜状胶粘剂的切割胶带的膜状胶粘剂上后，以10mm宽度切断。接着，从聚酯粘合带上将由膜状胶粘剂及切割胶带构成的层叠体进行分离。用2kg辊将40℃的镜面硅晶片粘贴于层叠体的膜状胶粘剂面后，在40℃下放置2分钟。然后，在常温(25℃)下放置20分钟，得到样品。
使用拉伸试验机((株)岛津制作所制的AGS-J)，在剥离角度180度、剥离温度25℃、剥离速度300mm/min下对样品进行剥离试验(镜面硅晶片与膜状胶粘剂之间的剥离试验)。
［粘接性评价］
使用晶圆贴片机(日东精机(株)制的MA-3000III)以10mm/min的粘贴速度、40℃的粘贴温度将镜面硅晶片贴合于带有膜状胶粘剂的切割胶带的膜状胶粘剂上。
使用切片机((株)DISCO制的DFD-6361)，将通过贴合得到的所得物切割(单片化)为10mm×10mm见方，得到单片。使用芯片接合机(株)新川制的SPA-300)在120℃、0.1MPa、1秒下将单片(由芯片及膜状胶粘剂构成的单片)芯片贴装于引线框。芯片贴装后用扫描型电子显微镜观察单片的侧面，若单片与引线框之间无空隙，则判定为“无”，若有空隙则判定为“有”。
［挤出评价］
使用晶圆贴片机(日东精机(株)制的MA-3000III)以10mm/min的粘贴速度、40℃的粘贴温度将镜面硅晶片贴合于带有膜状胶粘剂的切割胶带的膜状胶粘剂上。
使用切割机((株)DISCO制的DFD-6361)将通过贴合得到的所得物切割(单片化)为10mm×10mm见方，得到单片。使用芯片接合机(株)新川制的SPA-300)在120℃、0.4MPa、1秒下将单片(由芯片及膜状胶粘剂构成的单片)芯片贴装于引线框。芯片贴装后用光学显微镜从上表面观察单片，测定膜状胶粘剂从芯片的端面挤出的距离(挤出距离)。
［25℃的储能模量评价］
将膜状胶粘剂从带有膜状胶粘剂的切割胶带分离，将膜状胶粘剂重叠直至厚度达到300μm，制作出由膜状胶粘剂构成的层叠体。从该层叠体切出宽度10mm的条状样品。
使用动态粘弹性测定装置(Rheometric Scientific公司制的RSAIII)，以夹盘间距20mm、升温速度10℃/分钟、拉伸测定模式在0～50℃下对该样品进行测定，求出25℃时的储能模量。
［膜状胶粘剂与切割胶带之间的剥离力的测定］
出于保持目的而将聚酯粘合带(日东电工(株)制的BT-315)贴合于带有膜状胶粘剂的切割胶带的膜状胶粘剂上后，以100mm×100mm宽度进行切割，制作出样品。对于该样品，在300mm/min的剥离速度、25℃的剥离温度下，以T剥离将膜状胶粘剂从切割胶带剥离，测定剥离力。
［综合判定］
将满足以下的全部条件的情形判定为○，将任意一个不满足的情形判定为×。
条件(1)：低温粘贴性评价(1)的判定结果为○。
条件(2)：低温粘贴性评价(2)中测定的密合力为0.5N/10mm以上。
条件(3)：粘接性评价的判定结果为“无”。
条件(4)：挤出评价中测定的挤出距离为100μm以下。
条件(5)：25℃的储能模量评价的测定结果为5MPa以上。
条件(6)：膜状胶粘剂与切割胶带之间的剥离力测定的测定结果为0.01～3.00N/20mm。
标号说明
1         基材
2         粘合剂层
3、3’    膜状胶粘剂
4         半导体晶片
5         半导体芯片
6         被粘物
7         焊线
8         密封树脂
10、12    带有膜状胶粘剂的切割胶带
11        切割胶带

Claims (11)

1.一种膜状胶粘剂，其含有热塑性树脂及导电性粒子，
所述膜状胶粘剂在40℃下粘贴于镜面硅晶片后，在25℃下测定的密合力为0.5N/10mm以上。
2.根据权利要求1所述的膜状胶粘剂，其中，所述热塑性树脂的玻璃化转变温度为-40～-10℃。
3.根据权利要求1所述的膜状胶粘剂，其含有固化性树脂。
4.根据权利要求3所述的膜状胶粘剂，其中，
所述固化性树脂含有在25℃下为固态的固化性树脂及在25℃下为液态的固化性树脂，且
在25℃下为固态的固化性树脂的重量/在25℃下为液态的固化性树脂的重量所表示的重量比率为49/51～10/90。
5.根据权利要求1所述的膜状胶粘剂，其厚度为5～100μm。
6.根据权利要求1所述的膜状胶粘剂，其中，25℃下的储能模量为5MPa以上。
7.根据权利要求1所述的膜状胶粘剂，其作为芯片贴装膜而被使用。
8.一种带有膜状胶粘剂的切割胶带，其中，在切割胶带上层叠有权利要求1所述的膜状胶粘剂。
9.根据权利要求8所述的带有膜状胶粘剂的切割胶带，其中，在剥离温度为25℃、剥离速度为300mm/min的条件下，从所述切割胶带剥离所述膜状胶粘剂时的剥离力为0.01～3.00N/20mm。
10.一种半导体装置的制造方法，其包括使用权利要求1所述的膜状胶粘剂将半导体芯片贴装于被粘物的工序。
11.一种半导体装置，其通过权利要求10所述的制造方法而得到。
CN201410054163.8A 2013-02-20 2014-02-18 膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置 Pending CN103992755A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013031336 2013-02-20
JP2013-031336 2013-02-20
JP2014-001514 2014-01-08
JP2014001514A JP6542504B2 (ja) 2013-02-20 2014-01-08 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置

Publications (1)

Publication Number Publication Date
CN103992755A true CN103992755A (zh) 2014-08-20

Family

ID=50115722

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410054163.8A Pending CN103992755A (zh) 2013-02-20 2014-02-18 膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置

Country Status (6)

Country Link
US (1) US9484240B2 (zh)
EP (1) EP2770032A3 (zh)
JP (1) JP6542504B2 (zh)
KR (1) KR102062409B1 (zh)
CN (1) CN103992755A (zh)
TW (1) TWI615452B (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107109146A (zh) * 2014-12-24 2017-08-29 日东电工株式会社 加热接合用片材和带有切割带的加热接合用片材
CN108136503A (zh) * 2015-09-30 2018-06-08 日东电工株式会社 片和复合片
CN108184331A (zh) * 2015-09-30 2018-06-19 日东电工株式会社 片和复合片
CN109041580A (zh) * 2016-03-30 2018-12-18 琳得科株式会社 膜状粘接剂、半导体加工用片及半导体装置的制造方法
CN109070230A (zh) * 2016-03-23 2018-12-21 日东电工株式会社 加热接合用片材、带有切割带的加热接合用片材、及接合体的制造方法、功率半导体装置
CN109504299A (zh) * 2018-11-13 2019-03-22 江苏朗臣新材料科技有限公司 一种泡棉胶带基材的制备方法
CN110545944A (zh) * 2017-04-28 2019-12-06 琳得科株式会社 膜状烧成材料、带支撑片的膜状烧成材料、膜状烧成材料的制造方法、及带支撑片的膜状烧成材料的制造方法
CN113228237A (zh) * 2018-12-28 2021-08-06 昭和电工材料株式会社 光固化性压敏胶黏剂的评价方法、切割晶粒接合一体型膜及其制造方法以及半导体装置的制造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3086361A3 (de) * 2015-04-02 2017-01-25 Heraeus Deutschland GmbH & Co. KG Verfahren zum herstellen einer substratanordnung mit einem vorfixiermittel, entsprechende substratanordnung, verfahren zum verbinden eines elektronikbauteils mit einer substratanordnung mit anwendung eines auf dem elektronikbauteil und/oder der substratanordnung aufgebrachten vorfixiermittels und mit einer substratanordnung verbundenes elektronikbauteil
WO2016163537A1 (ja) * 2015-04-10 2016-10-13 株式会社カネカ グラファイト複合フィルム及びその製造方法並びに放熱部品
JP6505572B2 (ja) * 2015-09-30 2019-04-24 日東電工株式会社 加熱接合用シート及びダイシングテープ付き加熱接合用シート
US10546823B2 (en) 2015-11-13 2020-01-28 Intel Corporation Apparatus and method for mitigating surface imperfections on die backside film using fluorocarbon material
JP6721398B2 (ja) * 2016-04-22 2020-07-15 日東電工株式会社 ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法
WO2017212736A1 (ja) * 2016-06-06 2017-12-14 Dic株式会社 接着シート及び物品
JP6918445B2 (ja) * 2016-06-24 2021-08-11 日東電工株式会社 加熱接合用シート及びダイシングテープ付き加熱接合用シート
JP6864505B2 (ja) 2016-06-24 2021-04-28 日東電工株式会社 加熱接合用シート及びダイシングテープ付き加熱接合用シート
JP6815132B2 (ja) * 2016-08-31 2021-01-20 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
US20200048504A1 (en) * 2017-03-29 2020-02-13 Nitto Denko Corporation Thermal-bonding sheet and thermal-bonding sheet-attached dicing tape
KR102152642B1 (ko) * 2018-12-07 2020-09-08 서울대학교산학협력단 냉각 및 가열이 가능한 신축성 유연 웨어러블 열전소자
CN110551473B (zh) * 2019-09-09 2021-11-30 广东莱尔新材料科技股份有限公司 一种高耐候高粘接力的粘结剂和ffc线材补强板
JP7190418B2 (ja) * 2019-11-08 2022-12-15 日東電工株式会社 熱硬化性シート及びダイシングダイボンドフィルム
US11373967B2 (en) * 2019-11-14 2022-06-28 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method for packaging the same
US11538741B2 (en) * 2020-02-17 2022-12-27 Texas Instruments Incorporated Multi-chip module leadless package

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605763A (en) * 1992-09-16 1997-02-25 Hitachi Chemical Company Ltd. Electrically conductive bonding films
JP2005276925A (ja) * 2004-03-23 2005-10-06 Sumitomo Bakelite Co Ltd 導電性接着フィルムおよびこれを用いた半導体装置
WO2009067113A1 (en) * 2007-11-20 2009-05-28 Henkel Ag & Co. Kgaa Low-voiding die attach film, semiconductor package, and processes for making and using same
CN102408845A (zh) * 2010-09-21 2012-04-11 日东电工株式会社 切割/芯片接合薄膜、切割/芯片接合薄膜的制造方法以及半导体装置的制造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616524B2 (ja) 1984-03-12 1994-03-02 日東電工株式会社 半導体ウエハ固定用接着薄板
JPH04137827A (ja) 1990-09-28 1992-05-12 Mazda Motor Corp 車両用受信装置
US5667899A (en) 1992-09-16 1997-09-16 Hitachi Chemical Co. Ltd. Electrically conductive bonding films
JP2004059859A (ja) * 2002-07-31 2004-02-26 Mitsui Chemicals Inc フィルム状接着剤及びその接着工法並びに該フィルム状接着剤を用いた半導体装置
JP4275522B2 (ja) * 2003-12-26 2009-06-10 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5757625B2 (ja) * 2008-04-25 2015-07-29 エルジー・ケム・リミテッド エポキシ系組成物、接着フィルム、ダイシングダイボンディングフィルム及び半導体装置
KR101114360B1 (ko) * 2008-04-25 2012-02-10 주식회사 엘지화학 에폭시계 조성물, 접착 필름, 다이싱 다이본딩 필름 및 반도체 장치
JP5174092B2 (ja) * 2009-08-31 2013-04-03 日東電工株式会社 ダイシングシート付き接着フィルム及びその製造方法
JP5632695B2 (ja) * 2009-11-26 2014-11-26 日東電工株式会社 ダイシングフィルム付き接着フィルム、及び、該ダイシングフィルム付き接着フィルムを用いた半導体装置の製造方法
JP5619466B2 (ja) * 2010-04-13 2014-11-05 デクセリアルズ株式会社 硬化性樹脂組成物、接着性エポキシ樹脂ペースト、ダイボンド剤、非導電性ペースト、接着性エポキシ樹脂フィルム、非導電性エポキシ樹脂フィルム、異方性導電ペースト及び異方性導電フィルム
JP2011224853A (ja) * 2010-04-19 2011-11-10 Nitto Denko Corp フィルム及び粘接着シート
JP4976531B2 (ja) * 2010-09-06 2012-07-18 日東電工株式会社 半導体装置用フィルム
JP5580701B2 (ja) * 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
JP5580730B2 (ja) * 2010-12-28 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体素子
JP5820170B2 (ja) * 2011-07-13 2015-11-24 日東電工株式会社 半導体装置用の接着フィルム、フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5605763A (en) * 1992-09-16 1997-02-25 Hitachi Chemical Company Ltd. Electrically conductive bonding films
JP2005276925A (ja) * 2004-03-23 2005-10-06 Sumitomo Bakelite Co Ltd 導電性接着フィルムおよびこれを用いた半導体装置
WO2009067113A1 (en) * 2007-11-20 2009-05-28 Henkel Ag & Co. Kgaa Low-voiding die attach film, semiconductor package, and processes for making and using same
CN102408845A (zh) * 2010-09-21 2012-04-11 日东电工株式会社 切割/芯片接合薄膜、切割/芯片接合薄膜的制造方法以及半导体装置的制造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107109146A (zh) * 2014-12-24 2017-08-29 日东电工株式会社 加热接合用片材和带有切割带的加热接合用片材
CN108136503B (zh) * 2015-09-30 2021-05-11 日东电工株式会社 片和复合片
CN108136503A (zh) * 2015-09-30 2018-06-08 日东电工株式会社 片和复合片
CN108184331A (zh) * 2015-09-30 2018-06-19 日东电工株式会社 片和复合片
US11634611B2 (en) 2015-09-30 2023-04-25 Nitto Denko Corporation Sheet and composite sheet
CN108184331B (zh) * 2015-09-30 2021-08-24 日东电工株式会社 片和复合片
TWI686249B (zh) * 2015-09-30 2020-03-01 日商日東電工股份有限公司 片材及複合片材
TWI701311B (zh) * 2015-09-30 2020-08-11 日商日東電工股份有限公司 片材及複合片材
US10888929B2 (en) 2015-09-30 2021-01-12 Nitto Denko Corporation Sheet and composite sheet
CN109070230A (zh) * 2016-03-23 2018-12-21 日东电工株式会社 加热接合用片材、带有切割带的加热接合用片材、及接合体的制造方法、功率半导体装置
CN109041580A (zh) * 2016-03-30 2018-12-18 琳得科株式会社 膜状粘接剂、半导体加工用片及半导体装置的制造方法
CN110545944A (zh) * 2017-04-28 2019-12-06 琳得科株式会社 膜状烧成材料、带支撑片的膜状烧成材料、膜状烧成材料的制造方法、及带支撑片的膜状烧成材料的制造方法
CN109504299A (zh) * 2018-11-13 2019-03-22 江苏朗臣新材料科技有限公司 一种泡棉胶带基材的制备方法
CN113228237A (zh) * 2018-12-28 2021-08-06 昭和电工材料株式会社 光固化性压敏胶黏剂的评价方法、切割晶粒接合一体型膜及其制造方法以及半导体装置的制造方法

Also Published As

Publication number Publication date
JP6542504B2 (ja) 2019-07-10
US20140231983A1 (en) 2014-08-21
EP2770032A2 (en) 2014-08-27
EP2770032A3 (en) 2017-07-19
KR102062409B1 (ko) 2020-01-03
US9484240B2 (en) 2016-11-01
JP2014187353A (ja) 2014-10-02
TW201437311A (zh) 2014-10-01
KR20140104346A (ko) 2014-08-28
TWI615452B (zh) 2018-02-21

Similar Documents

Publication Publication Date Title
CN103992755A (zh) 膜状胶粘剂、带有膜状胶粘剂的切割胶带、半导体装置的制造方法、及半导体装置
CN105647405B (zh) 导电性膜状胶粘剂、带膜状胶粘剂的切割带和半导体装置的制造方法
CN102190975B (zh) 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
JP6033734B2 (ja) フィルム状接着剤、ダイシングテープ一体型フィルム状接着剤、及び、半導体装置の製造方法
CN105899630A (zh) 膜状胶粘剂、带有膜状胶粘剂的切割带、半导体装置的制造方法、以及半导体装置
CN107109146A (zh) 加热接合用片材和带有切割带的加热接合用片材
JP6289104B2 (ja) フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
CN102153956A (zh) 热固型胶粘薄膜、带有切割薄膜的胶粘薄膜、以及使用它们制造半导体装置的方法
CN104946147A (zh) 芯片接合膜、切割-芯片接合膜及层叠膜
CN104910825A (zh) 胶粘片及其用途
JP5580730B2 (ja) ダイシング・ダイボンドフィルム及び半導体素子
CN105623533A (zh) 粘接片、带切割片的粘接片、层叠片以及半导体装置的制造方法
JP2012142368A (ja) ダイシング・ダイボンドフィルム及び半導体素子
CN102911616B (zh) 芯片接合薄膜、切割/芯片接合薄膜及半导体装置
CN103525338A (zh) 半导体装置用胶粘剂组合物、半导体装置用胶粘薄膜、带有切割薄膜的胶粘薄膜、半导体装置的制造方法以及半导体装置
CN105103280A (zh) 底部填充用粘接膜、背面研削用胶带一体型底部填充用粘接膜、切割胶带一体型底部填充用粘接膜以及半导体装置
WO2015104988A1 (ja) 導電性フィルム状接着剤及びフィルム状接着剤付きダイシングテープ
JP2017092365A (ja) ダイシングテープ一体型接着シート、及び、半導体装置の製造方法
JP2015129225A (ja) フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
JP6259665B2 (ja) フィルム状接着剤、及びフィルム状接着剤付きダイシングテープ
TW201533214A (zh) 導電性膜狀接著劑、半導體裝置之製造方法及半導體裝置
CN105899629A (zh) 膜状胶粘剂、带有膜状胶粘剂的切割带、半导体装置的制造方法、以及半导体装置
JP2015130418A (ja) 導電性フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20140820