TWI701311B - 片材及複合片材 - Google Patents

片材及複合片材 Download PDF

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Publication number
TWI701311B
TWI701311B TW105131681A TW105131681A TWI701311B TW I701311 B TWI701311 B TW I701311B TW 105131681 A TW105131681 A TW 105131681A TW 105131681 A TW105131681 A TW 105131681A TW I701311 B TWI701311 B TW I701311B
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Taiwan
Prior art keywords
sintering
before sintering
sheet
layer before
layer
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TW105131681A
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English (en)
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TW201731995A (zh
Inventor
鎌倉菜穗
菅生悠樹
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日商日東電工股份有限公司
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
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Abstract

本發明係提供一種具有燒結前層之片材，該燒結前層在燒結後之厚度係成為可緩和應力之程度。

本發明關於一種含有燒結前層的片材。燒結前層於90℃之黏度係0．27MPa．s以上。燒結前層之厚度係30μm~200μm。

Description

片材及複合片材
本發明係關於一種片材及複合片材。
以不具有在低溫下(例如：300℃)形成燒結體之性質的導電性接著劑，於基板上固定晶片。然而，使用此導電性接著劑之電力模組，無法確保所定的信賴性(例如：以溫度循環試驗評估之信賴性)。
另一方面，含有奈米金屬粒子之接合劑，係可在低溫下形成燒結體。例如專利文獻1，係揭示了一種以含有平均一次粒徑為1~50nm之銀微粒的膏狀物塗佈基板，使膏狀物乾燥，進行燒結的技術。
【先前技術文獻】 【專利文獻】
【專利文獻1】日本特開2015-4105號公報
專利文獻1所記載之接合劑為膏狀物，因此為了接合基板與晶片，必須於基板塗佈膏狀物，於燒結前去除膏狀物之溶劑。若未去除溶 劑而進行燒結，膏狀物將會流動，燒結時厚度將會大幅降低。燒結體之厚度的降低，會導致以溫度循環試驗所評估之信賴性降低。厚度若過小，燒結體將無法緩和溫度變化所產生的應力。
若為了省略溶劑去除之步驟而提高膏狀物之濃度，將難以於基板塗佈膏狀物。
專利文獻1所記載之膏狀組成物之燒結體有乾燥不均勻的可能性。因膏狀物含有大量的溶劑。乾燥不均勻，將導致信賴性的降低。
本發明之目的係提供一種燒結後之厚度成為可緩和應力之程度的燒結前層。本發明之目的亦為提供一種具有燒結前層的片材。此外，本發明之目的亦為提供一種具有燒結前層的複合片材。
本發明係關於一種包含燒結前層之片材。燒結前層於90℃之黏度為0．27MPa．s以上。因其為0．27Pa．s以上，燒結所導致的厚度降低極小。燒結前層之厚度係30μm~200μm。因其為30μm以上，燒結後之厚度(燒結體之厚度)，成為可緩和應力之程度的厚度。
本發明亦關於一種複合片材。複合片材係可含有剝離襯墊、配置於剝離襯墊上之燒結前層、及配置於燒結前層上之切晶片。
本發明亦關於一種電力模組的製造方法。本發明之電力模組之製造方法，係包含於半導體晶圓貼附片材(包含切晶片及配置於切晶片上之燒結前層)之步驟(a)。本發明之電力模組之製造方法，進一步包含 於步驟(a)後藉由晶粒分割而形成燒結前晶片(包含半導體晶片及配置於半導體晶片上之燒結前膜)之步驟(b)。本發明之電力模組之製造方法，進一步包含於被黏物壓接燒結前晶片之步驟(c)，及與步驟(c)之後進行燒結前膜之燒結的步驟(d)。
藉由本發明，可提供一種燒結後之厚度成為可緩和應力之程度的燒結前層。此外，亦可提供一種具有燒結前層的片材。藉由本發明，亦可提供一種具有燒結前層的複合片材。
1‧‧‧複合片材
11‧‧‧燒結前層
12‧‧‧切晶片
13‧‧‧剝離襯墊
71‧‧‧片材
121‧‧‧基材
122‧‧‧黏著劑層
122A‧‧‧第1部分
122B‧‧‧第2部分
2‧‧‧燒結前複合體
4‧‧‧半導體晶圓
5‧‧‧燒結前晶片
41‧‧‧半導體晶片
111‧‧‧燒結前膜
6‧‧‧被黏物
7‧‧‧焊接導線
8‧‧‧密封樹脂
171‧‧‧片材
14‧‧‧第1剝離襯墊
15‧‧‧第2剝離襯墊
【圖1】複合片材之概略平面圖。
【圖2】複合片材之一部分之概略斷面圖。
【圖3】電力模組之製造步驟之概略斷面圖。
【圖4】電力模組之製造步驟之概略斷面圖。
【圖5】電力模組之製造步驟之概略斷面圖。
【圖6】電力模組之製造步驟之概略斷面圖。
【圖7】變形例4之複合片材之一部分的概略斷面圖。
【圖8】變形例5之片材之概略斷面圖。
以下揭示實施型態，而詳細說明本發明，惟本發明係並非限 定於此等之實施例者。
〔實施型態1〕
(複合片材1)
如圖1所示，複合片材1呈捲筒狀。複合片材1係包含剝離襯墊13、及配置於剝離襯墊13上之片材71a、71b、71c、……、71m(以下，總稱「片材71」)。片材71a與片材71b間之距離、片材71b與片材71c間之距離、……片材711與片材71m間之距離係為固定。
如圖2所示，片材71係包含燒結前層11。片材71係進一步包含配置於燒結前層11上之切晶片12。切晶片12，係包含基材121、及配置於基材121上之黏著劑層122。燒結前層11之兩面係定義為與黏著劑層122連接之第1主面，及與第1主面對向之第2主面。第2主面係與剝離襯墊13連接。片材71係作業性佳。因燒結前層11及切晶片12從最初即為一體化。
黏著劑層122係包含第1部分122A。第1部分122A呈硬化狀態。第1部分122A係與燒結前層11連接。黏著劑層122係進一步包含於第1部分122A之周邊所配置的第2部分122B。第2部分122B係具有藉能量射線硬化之性質。能量射線可列舉例如紫外線等。第2部分122B未與燒結前層11連接。
燒結前層11係具有藉加熱成為燒結體之性質。燒結前層11係可使用於：用以接合第1物體與第2物體。例如接合晶片與基板。基板係包含絕緣基板及配置於絕緣基板上之導體層。絕緣基板可列舉例如陶 瓷基板等。
燒結前層11係可藉積層調整厚度，因此與膏狀物所形成層相比，厚度為均一。燒結前層11係為片狀，因此可省略膏狀物之必需步驟(印刷及乾燥)。
燒結前層11之厚度係30μm以上，以40μm以上較佳。因其為30μm以上，燒結後之厚度成為可緩和應力之程度的厚度。燒結前層11之厚度係200μm以下，以150μm以下較佳，進一步較佳為100μm以下。
燒結前層11於90℃之黏度係為0．27MPa．s以上，較佳為0．5MPa．s以上。因其為0．27MPa．S以上，燒結所導致的厚度降低小。燒結前層11於90℃之黏度之上限係為例如15MPa．S、10MPa．S、8MPa．S。燒結前層11於90℃之黏度，主要係因黏合劑之種類及黏合劑之含量而變化。
相對於燒結前層11之厚度100%，燒結體之厚度係以40%~80%為較佳。以下述條件1加熱燒結前積層體，且該燒結前積層體具有基板、晶片、基板與晶片所包夾之燒結前層11，而使燒結前層11變化為燒結體後，測定燒結體之厚度。
條件1：一邊藉平板加壓施予10MP之壓力於燒結前積層體，同時以1．5℃/秒由80℃升溫至300℃，且一邊施予10MP之壓力，同時維持300℃ 2．5分鐘。
燒結前層11係包含具有藉燒結而熱分解性質的黏合劑(以下，稱作「熱分解性黏合劑」)。例如，於大氣環境下以10℃/min升 溫速度由23℃升溫至400℃後之碳濃度顯示為15重量%以下之性質。碳濃度，係可藉X射線能量散佈分析而測定。熱分解性黏合劑，係以23℃下成固態較佳。因其23℃下成固態，燒結前層11之成形容易。
熱分解性黏合劑係例如聚碳酸酯、丙烯酸聚合物、乙基纖維素、聚乙烯醇等。燒結前層11可包含1種或2種以上之熱分解性黏合劑。其中，丙烯酸聚合物、聚碳酸酯為較佳，進一步較佳為聚碳酸酯。
聚碳酸酯之重量平均分子量，較佳係1萬以上，進一步較佳為3萬以上，更佳為5萬以上。聚碳酸酯之重量平均分子量，較佳係100萬以下，進一步較佳為50萬以下，更佳為35萬以下。重量平均分子量，係藉GPC(凝膠滲透層析)而測定，以聚苯乙烯換算而算出之值。
聚碳酸酯係例如脂肪族聚碳酸酯。脂肪族聚碳酸酯係以主鏈的碳酸酯基(-O-CO-O-)之間不具芳香族化合物(例如，苯環)者較佳。脂肪族聚碳酸酯係以主鏈的碳酸酯基之間具脂肪族鏈者較佳。脂肪族聚碳酸酯係例如聚丙烯碳酸酯、聚乙烯碳酸酯、tert-聚丁基乙烯碳酸酯。其中，以聚丙烯碳酸酯為較佳。因其會藉燒結而有效地熱分解。
100重量%之燒結前層11中的熱分解性黏合劑之含量較佳為0．5重量%以上，進一步較佳為1重量%以上，更佳為2重量%以上。100重量%之燒結前層11中的熱分解性黏合劑之含量較佳為20重量%以下，進一步較佳為15重量%以下，更佳為10重量%以下。
燒結前層11係含有金屬粒子。為銀粒子、銅粒子、氧化銀粒子、氧化銅粒子等。燒結前層11係可含有1種或2種以上之金屬粒子。金屬粒子，係具有以1．5℃/秒由80℃升溫至300℃，接著維持3 00℃2．5分鐘之處理而可成燒結體的性質者為較佳。金屬粒子之微晶的平均徑，係以0．01nm以上較佳，進一步較佳為0．1nm以上，更佳為0．5nm以上。微晶之平均徑上限，係例如60nm，較佳為50nm，進一步較佳為45nm。微晶徑越小，有燒結溫度降越低之傾向。
金屬粒子之平均粒徑之下限，係例如為0．05nm、0．1nm、1nm。金屬粒子之平均粒徑之上限，係例如為1000nm、100nm。使用粒度分布測定裝置(日機裝製，MICROTRAC HRA)標準模式測定而求得之D50數據為平均粒徑。
100重量%之燒結前層11中的金屬粒子之含量係以50重量%以上較佳，進一步較佳為60重量%以上，更佳為65重量%以上。100重量%之燒結前層11中的金屬粒子之含量係以98重量%以下較佳，進一步較佳為97重量%以下，更佳為95重量%以下。
燒結前層11係進一步含有具100℃~350℃之沸點的黏合劑(以下，稱作「低沸點黏合劑」)。可列舉為例如戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二甘醇、丙二醇、丁二醇、α-松油醇、1，6-己二醇、異莰環己醇(MTPH)等之一元醇及多元醇類、乙二醇丁醚、乙二醇苯基醚、二甘醇甲醚、二甘醇乙醚、二甘醇丁醚、二甘醇異丁醚、二甘醇己醚、三甘醇甲醚、二甘醇二甲醚、二甘醇二乙醚、二甘醇二丁醚、二甘醇丁甲醚、二甘醇異丙基甲基醚、三甘醇二甲醚、三甘醇丁甲醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、三丙二醇二甲醚等之醚類、乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二甘醇乙醚乙酸酯、二甘醇丁醚 乙酸酯、二丙二醇甲醚乙酸酯(DPMA)等。係亦可併用此等之2種類以上。其中，以併用沸點相異之2種類為較佳。若使用沸點相異之2種類，於片材形狀之維持的點上表現優異。
藉由調製含有熱分解性黏合劑、金屬粒子等之塗漆，並於支撐物塗佈塗漆，使塗漆乾燥等方法，可得燒結前層11。塗漆之溶劑係例如甲基乙基酮。
黏著劑層122之厚度係較佳為3μm以上，進一步較佳為5μm以上。黏著劑層122之厚度係較佳為50μm以下，進一步較佳為30μm以下。
黏著劑層122係由黏著劑而形成。黏著劑係例如丙烯酸系黏著劑、橡膠系黏著劑。其中以丙烯酸系黏著劑較佳。丙烯酸系黏著劑，係例如將使用1種或2種以上(甲基)丙烯酸烷酯為單體成分的丙烯酸系聚合物(均聚物或共聚合物)作為基聚合物之丙烯酸系黏著劑。
基材121之厚度係較佳為50μm~150μm。基材121係具有可通透能量射線之性質為較佳。
剝離襯墊13之厚度係較佳為20μm~75μm，進一步較佳為25μm~50μm。剝離襯墊13可列舉如聚對苯二甲酸乙二酯(PET)膜等。
(電力模組之製造方法)
如圖3所示，於半導體晶圓4貼附片材71。半導體晶圓4係例如矽晶圓、碳化矽晶圓、氮化鎵晶圓等。例如於70℃~80℃下貼附。
如圖4所示，藉由切割半導體晶圓4，而形成燒結前晶片5。 燒結前晶片5係包含半導體晶片41及配置於半導體晶片41上之燒結前膜111。
進行燒結前晶片5拾晶。亦即，以針將燒結前晶片5上推而抓住，從黏著劑層上分離。
如圖5所示，藉由於被黏物6壓接燒結前晶片5而得到燒結前複合體2。例如於80℃~100℃下壓接。被黏物6係例如基板、引線框、中介層、TAB膜、半導體晶片等。燒結前複合體2，係包含被黏物6、半導體晶片41、及被黏物6與半導體晶片41所包夾之燒結前膜111。
進行燒結前膜111之燒結。亦即一邊以平板施力於燒結前複合體2，同時加熱燒結前複合體2，使燒結前膜111變化為燒結體。燒結溫度之下限係例如200℃、250℃。燒結溫度之上限係例如320℃、350℃。施予燒結前複合體2之壓力之下限係例如1MPa、5MPa。施予燒結前複合體2之壓力之上限係例如30MPa、20MPa。
如圖6所示，以焊接導線7電連接半導體晶片41之電擊墊與被黏物6之端子部。焊接導線7係例如鋁線、金線、銅線。
焊線接合之後，以密封樹脂8密封半導體晶片41。亦可於密封後進一步加熱。藉此，硬化不足的密封樹脂可完全地硬化。
藉由以上方法所得電力模組，係包含被黏物6、半導體晶片41、被包夾於被黏物6及半導體晶片41之間的燒結體。電力模組係可進一步含有包覆密封半導體晶片41的密封樹脂8。
如以上所述，電力模組的製造方法，係包含於半導體晶圓4貼附片材71之步驟(a)、於步驟(a)後藉由晶粒分割而形成燒結前晶片5之步驟(b)、於被黏物6壓接燒結前晶片5之步驟(c)、及於步驟(c)之後進行燒結前膜111之燒結的步驟(d)。步驟(d)係包含加熱燒結前複合體2之工序。
於步驟(d)之後，電力模組之製造方法係進一步包含步驟(e)，其係包含焊接導線7之第1端與半導體晶片41的接合工序、及焊接導線7之第2端與被黏物6的接合工序。電力模組之製造方法，係進一步包含以密封樹脂8密封半導體晶片41之步驟(f)。
(變形例1)
黏著劑層122之第1部分122A係具有藉能量射線硬化之性質。黏著劑層122之第2部分122B亦具有藉能量射線硬化之性質。於形成燒結前晶片5之步驟(b)之後，電力模組之製造方法係進一步包含於黏著劑層122照射能量射線並抓取燒結前晶片5之步驟。若照射能量射線，燒結前晶片5之拾晶將變容易。
(變形例2)
黏著劑層122之第1部分122A係藉由能量射線硬化。黏著劑層122之第2部分122B亦藉由能量射線硬化。
(變形例3)
燒結前層11，係變成含有第1層及第1層上所配置之第2層的複層形狀。
(變形例4)
如圖7所示，黏著劑層122之單面整體與燒結前層11連接。黏著劑層122係具有藉能量射線硬化之性質。形成燒結前晶片5之步驟(b)之後，電源模組製造方法進一步包含於黏著劑層122照射能量射線並拾晶燒結前晶片5之步驟。
(變形例5)
如圖8所示，片材171係包含燒結前層11。燒結前層11之兩面定義為第1面及前述第1面對面之第2面。片材171係進一步包含配置於第1面上之第1剝離襯墊14、及配置於第2面上之第2剝離襯墊15。
(其他變形例)
變形例1~變形例5等，係可任意地組合。
【實施例】
以下，使用關於本發明之實施例詳細說明，惟本發明係只要不超出其要旨，則不限定於以下之實施例。
〔燒結前片材之原料等〕
調整後ANP-1：將應用奈米粒子研究所所製之ANP-1(於黏合劑有奈米粒子之銀微粒子分散的膏狀物)中所含黏度調整用溶劑之量適當調整者。
銅微粒子：三井金屬礦業公司製之平均粒徑200nm、微晶粒徑31nm的銅微粒子。
MM-2002-1：藤倉化成公司製之MM-2002-1(丙烯 酸聚合物)。
QPAC40：Empower公司製之QPAC40(重量平均分子量為5萬~35萬之聚碳酸丙烯酯)。
萜索夫MTPH：日本Terpene化學公司製之萜索夫(Tersolve，高黏度萜烯系醇)。
〔燒結前片材之製作〕
根據表1之記載，於混合攪拌器(Keyence製，HM-500)之攪拌槽內加入各成分及甲乙酮，以2000rpm攪拌8分鐘，得到塗漆。於離型處理膜(三菱樹脂公司製之MRA38)塗工塗漆。以110℃乾燥3分鐘而得到燒結前片材。燒結前片材之厚度係示於表1。
Figure 105131681-A0202-12-0013-4
〔比較例4．5所用接合劑〕
NihonHanda公司製之MAX102(膏狀接合劑)。
〔評價1 90℃黏度〕
使用HAAKE公司製之MARS III以間距300μm、直徑8mm、應變0．05%、頻率1Hz之條件測定接合劑(燒結前片材A~I及MAX102‧調整後ANP-1)之黏度。結果示於表2。
〔評價2-1 厚度．信賴性 實施例1~7及比較例1~2〕
準備厚度350μm、縱長5mm、橫長5mm之矽晶片、厚度100nm之Ag膜、及矽晶片與Ag膜所包夾之50nm之Ti膜的晶片。藉由以70℃、0．3MPa、10mm/秒之條件貼附燒結前片材於晶片之Ag膜，製作附燒結前片材晶片。於Ag鍍覆Cu基板(厚度3mm之Cu基板，具有覆蓋Cu基板整體之5μm之Ag膜)上配置附燒結前片材晶片。以燒結裝置(伯東公司製之HTM-3000)進行燒結。接合Ag鍍覆Cu基板與晶片。具體而言，一邊藉平板加壓施予10MP之壓力於燒結前積層體，同時以1．5℃/秒由80℃升溫至300℃，且一邊施加10MP之壓力，同時維持300℃ 2．5分鐘而接合。又，僅實施例6於氮氣環境下進行燒結。
藉由接合Ag鍍覆Cu基板與晶片而得試料，係具有Ag鍍覆Cu基板、晶片、及Ag鍍覆Cu基板與晶片所包夾之燒結體。測定燒結體之厚度(燒結後之厚度)。結果示於表2。
以冷熱衝擊試驗機(ESPEC公司製之TSE-103E S)施予試料100循環之溫度變化。一循環係由於-40℃維持15分鐘之第1時段，及於125℃維持15分鐘之第2時段而成。以超音波影像裝置(日立建機Finetech公司製之FineSAT II)觀察100循環後之試料。使用PQ-50-13：WD探頭(頻率50MHz)。求得所得影像之接合而剩餘的面積(以下稱「剩餘面積」)。算出以全面積為100%時，剩餘面積之比例。剩餘面積之比例為50%以上之情形判定為○。低於50%之情形判定為×，結果示於表2。
〔評價2-2 厚度．信賴性 比較例4〕
藉MAX102之塗佈而於Ag鍍覆Cu基板上形成接合劑層。測定接合劑層之厚度。測定厚度後，以150℃30分鐘去除接合劑之溶劑。配置晶片於接合劑層上。以與實施例1相同條件進行燒結，接合Ag鍍覆Cu基板與晶片。測定燒結體之厚度。對於樣本施予與實施例1相同的溫度變化，評估信賴性。結果示於表2。
〔評價2-3 厚度．信賴性 比較例5〕
除了省略溶劑去除之工序外，以與比較例4相同方法評估厚度及信賴性。結果示於表2。
〔評價3 銀微粒或銅微粒之含量〕
藉由以10℃/min升溫至500℃的TG-DTA求得銀微粒子或銅微粒子之含量。在求得銅微粒子之含量時，係於氮氣環境下進行TG-DTA。結果示於表2。
Figure 105131681-A0202-12-0016-5
比較例5(以MAX102形成接合劑層，不去除溶劑而進行燒結之例)，係燒結時厚度大幅降低。因燒結前未去除溶劑。為了抑制MAX102所形成之接合劑層的厚度降低，溶劑的去除為必需。信賴性亦差。
比較例4(以MAX102形成接合劑層，去除溶劑之例)係作業性差。因有去除溶劑之工序。以比較例4形成之燒結體可能有乾燥不均均情形。因去除了大量的溶劑。信賴性亦不佳。
比較例3(使用調整後ANP-1之例)係無法形成接合劑層。因調整後ANP-1之黏度過高。
與比較例2相比，實施例2‧3‧5係厚度變化較小。因燒結時之流動小。與比較例1相比，實施例2係燒結後之厚度較大。因實施例2之燒結前之厚度較比較例1的大。實施例1~5係信賴性亦佳。
1‧‧‧複合片材
13‧‧‧剝離襯墊
71‧‧‧片材

Claims (9)

  1. 一種片材，其特徵係其含有燒結前層；前述燒結前層之厚度為30μm~200μm；前述燒結前層於90℃之黏度為0．27MPa．s以上；前述燒結前層含有金屬粒子，以及具有藉燒結而熱分解性質的黏合劑；前述金屬粒子，具有可藉由1．5℃/秒由80℃升溫至300℃且於300℃維持2．5分鐘而成為燒結體的性質。
  2. 如申請專利範圍第1項所記載之片材，其中，以下述條件1加熱燒結前積層體，且前述燒結前積層體具有基板、晶片、及前述基板與前述晶片所包夾之前述燒結前層，而使前述燒結前層變化為燒結體時，相對於前述燒結前層之厚度100%，前述燒結體之厚度係40%~80%；條件1：一邊藉平板加壓施予10MP之壓力於前述燒結前積層體，一邊以1．5℃/秒由80℃升溫至300℃，且一邊施加前述壓力，同時於300℃維持2．5分鐘。
  3. 如申請專利範圍第1項所記載之片材，其中，前述金屬粒子係含有選自銀粒子、銅粒子、氧化銀粒子及氧化銅粒子所成群中之至少一種。
  4. 如申請專利範圍第1項所記載之片材，其中，前述燒結前層100重量%中之前述金屬粒子之含量係50重量%~98重量%。
  5. 如申請專利範圍第1項所記載之片材，其中，前述黏合劑，係含有選自聚碳酸酯、丙烯酸聚合物、乙基纖維素、及聚乙烯醇所成群中之至少一種。
  6. 如申請專利範圍第1項所記載之片材，其中，前述燒結前層，係使用於：用以接合第1物體與第2物體。
  7. 如申請專利範圍第1項所記載之片材，其中，前述燒結前層之兩面定義為第1面及前述第1面對面之第2面；且前述片材係進一步包含配置於前述第1面上之第1剝離襯墊；及配置於前述第2面上之第2剝離襯墊。
  8. 如申請專利範圍第1項所記載之片材，其中，進一步含有配置於前述燒結前層上之切晶片。
  9. 一種複合片材，其特徵係其含有剝離襯墊；及配置於前述剝離襯墊上之如申請專利範圍第8項所記載之片材。
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