TW202039140A - 燒結接合用片材及附有基材之燒結接合用片材 - Google Patents

燒結接合用片材及附有基材之燒結接合用片材 Download PDF

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TW202039140A
TW202039140A TW109107972A TW109107972A TW202039140A TW 202039140 A TW202039140 A TW 202039140A TW 109107972 A TW109107972 A TW 109107972A TW 109107972 A TW109107972 A TW 109107972A TW 202039140 A TW202039140 A TW 202039140A
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Taiwan
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sheet
sintered
bonding sheet
sintered bonding
bonding
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TW109107972A
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English (en)
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三田亮太
市川智昭
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日商日東電工股份有限公司
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Publication of TW202039140A publication Critical patent/TW202039140A/zh

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Abstract

本發明提供一種適於向接合對象物之接合預定面適當地供給燒結接合用材料之燒結接合用片材及附有基材之燒結接合用片材。 本發明之燒結接合用片材10包含含有導電性金屬之燒結性粒子及黏合劑成分。燒結接合用片材10其藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1。作為本發明之附有基材之燒結接合用片材之片材體X具有包含基材B與燒結接合用片材10之積層結構。

Description

燒結接合用片材及附有基材之燒結接合用片材
本發明係關於一種可用於半導體裝置之製造等之燒結接合用片材、及帶有基材之燒結接合用片材。
於半導體裝置之製造中，作為用以一面將半導體晶片黏晶於引線框架或絕緣電路基板等支持基板一面取得與支持基板側之電性連接之方法，已知有於支持基板與晶片之間形成Au-Si共晶合金層而實現接合狀態之方法、或者利用焊料或含有導電性粒子之樹脂作為接合材之方法。
另一方面，近年來負責電力之供給控制之功率半導體裝置之普及顯著。功率半導體裝置大多情形下因動作時之通電量較大而導致發熱量較大。因此，於功率半導體裝置之製造中，關於一面將半導體晶片黏晶於支持基板一面取得與支持基板側之電性連接之方法，要求能夠實現高溫動作時可靠性亦較高之接合狀態。於採用SiC或GaN作為半導體材料來謀求高溫動作化之功率半導體裝置中，此種要求尤為強烈。並且，為了應對此種要求，提出有使用含有燒結性粒子與溶劑等之燒結接合用組合物之技術作為伴隨電性連接之黏晶方法。
於使用含有燒結性粒子之燒結接合用材料所進行之黏晶中，首先，經由燒結接合用材料於特定之溫度、荷重條件下將半導體晶片載置於支持基板之晶片接合預定部位。其後，於特定之溫度、加壓條件下進行加熱步驟以於支持基板與其上之半導體晶片之間產生燒結接合用材料中之溶劑揮發等且於燒結性粒子間使燒結進行。藉此，於支持基板與半導體晶片之間形成燒結層，使得半導體晶片電性連接並且機械性地接合於支持基板。此種技術例如記載於下述之專利文獻1、2中。 [先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開2013-039580號公報 [專利文獻2]日本專利特開2014-111800號公報
[發明所欲解決之問題]
於利用燒結接合進行黏晶之半導體裝置製造過程中，先前有時逐個半導體晶片塗佈含有燒結性粒子之糊狀組合物。然而，此種方法並無效率。
另一方面，於利用燒結接合進行黏晶之半導體裝置製造過程中，為了一次性地對複數個半導體晶片供給燒結接合用材料，例如考慮經過如下製程。首先，於單面具有黏著面之加工用膠帶或其黏著面上排列複數個半導體晶片。繼而，對加工用膠帶上之半導體晶片陣列按壓作為製作成片材形態之燒結接合用材料之燒結接合用片材來進行貼合。繼而，一面使燒結接合用片材中壓接於半導體晶片之部位殘留於該半導體晶片上，一面進行該片材體之剝離。於藉由該片材體之貼合與其後之剝離來進行燒結接合用材料自片材體向各半導體晶片之轉印之情形(即，於半導體晶片上產生自周圍分離出之燒結接合用片材小片之情形)時，可獲得附有燒結接合用材料層之半導體晶片(轉印步驟)。根據此種方法，能夠一次性地對複數個半導體晶片供給燒結接合用材料。
然而，於上述之轉印步驟中，先前亦存在即便為燒結接合用片材中壓接於半導體晶片之部位亦未產生小片化(即，未自周圍分離)而自該半導體晶片剝離之部位。此種轉印步驟就良率較佳地製造包含半導體晶片之燒結接合部位之半導體裝置之方面而言欠佳。
本發明係基於如上之情況而想出者，其目的在於提供一種適於向接合對象物之接合預定面適當地供給燒結接合用材料之燒結接合用片材及附有基材之燒結接合用片材。 [解決問題之技術手段]
根據本發明之第1態樣，提供一種燒結接合用片材。該燒結接合用片材包含含有導電性金屬之燒結性粒子及黏合劑成分。並且，於本燒結接合用片材中，藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1，較佳為滿足0.15≦F/f≦0.9。
於本發明中，所謂藉由SAICAS法所測定之剪切強度，設為於以下之條件下使用作為Daipla Wintes股份有限公司製造之裝置之SAICAS(Surface And Interfacial Cutting Analysis System)所測定之剪切強度(剪切破壞強度)：關於切刃，刃寬1 mm、斜角10°及隙角10°、切刃之水平速度為10 μm/s且垂直速度為0.5 μm/s之定速度模式；以及特定之溫度。該裝置能夠對基材上之作為測定對象物之材料層實施利用切刃之斜向切削，且可由關於其切削過程中之作用於切刃之水平力與垂直力及切刃之垂直位移之資料求出材料層之剪切強度等。
所謂奈米壓痕法係以奈米尺度測定試樣之各物性之技術，於該方法中，至少實施將壓頭壓入至設置於台上之試樣之過程(荷重施加過程)及其後自試樣拔出壓頭之過程(卸載過程)，於一系列過程中，測定作用於壓頭-試樣間之荷重與壓頭相對於試樣之相對位移，能夠獲得荷重-位移曲線。根據該荷重-位移曲線，能夠對於測定試樣求出基於奈米尺度測定之硬度或彈性模數、黏著力等物性。本發明中之利用奈米壓痕法之荷重-位移測定可使用奈米壓痕儀(商品名「Triboindenter」，Hysitron公司製造)來進行。於該測定中，測定模式設為單一壓入測定，測定溫度設為23℃，使用壓頭設為Berkovich(三角錐)型之金剛石壓頭，荷重施加過程中達到之最大荷重(設定值)設為500 μN，荷重施加過程中之壓頭之壓入速度設為100 μN/s，卸載過程中之壓頭之拔出速度設為100 μN/s。圖1係表示藉由奈米壓痕法所得之荷重-位移曲線之一例之線圖。於圖1之線圖中，橫軸表示壓頭之位移(nm)，縱軸表示作用於壓頭之荷重(μN)。壓頭之位移係將以測定試樣之表面作為基準之壓頭之壓入長度以正值形式表現者。於圖1中之荷重-位移曲線中，包含表示荷重漸增之荷重施加過程L1 之線與表示荷重漸減之卸載過程L2 之線。於圖1之線圖中，作用於壓頭之荷重取負值之情形時，其意指壓頭因試樣表面之黏著力而於與其位移方向相反之方向受到拉拽力。本發明中之上述最小荷重係作為對壓頭之拉拽力而以正值表示者。又，於圖1中，亦表示上述作為最小荷重之fmin (μN)、及作為最大荷重之fmax (μN)。
本燒結接合用片材於包含半導體晶片之燒結接合部位之半導體裝置之製造過程中例如以如下方式使用。首先，對於排列於單面具有黏著面之加工用膠帶或其黏著面上之複數個半導體晶片按壓本燒結接合用片材並且進行貼合。繼而，一面使燒結接合用片材中壓接於半導體晶片之部位殘留於該半導體晶片上，一面進行該片材體之剝離作業。藉由此種貼合作業與其後之剝離作業來進行燒結接合用材料自燒結接合用片材向各半導體晶片之轉印，而於半導體晶片上產生作為自周圍分離出之燒結接合用片材小片之燒結接合用材料層(轉印步驟)。繼而，將附有燒結接合用材料層之半導體晶片經由其燒結接合用材料層壓接於基板來暫時固定。然後，經過加熱過程而由介存於暫時固定之半導體晶片與基板之間之燒結接合用材料層形成燒結層，從而將該半導體晶片燒結接合於基板。例如能夠以如上方式使用本燒結接合用片材將半導體晶片燒結接合於基板。
本燒結接合用片材如上所述，藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1，較佳為滿足0.15≦F/f≦0.9。關於包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體，本發明者等人得出以下見解：上述剪切強度F(MPa)及上述最小荷重f(μN)滿足0.1≦F/f≦1，較佳為滿足0.15≦F/f≦0.9之構成適於經過對接合對象物之接合預定面之壓接以相當於該面之形狀及尺寸向該面供給燒結接合用組合物。例如，如下述之實施例及比較例所示。認為於本燒結接合用片材中，將上述剪切強度F(MPa)除以上述最小荷重f(μN)所得之值為0.1以上、較佳為0.15以上且為1以下、較佳為0.9以下之構成適於使本燒結接合用片材取得藉由對接合對象物之接合預定面之壓接所達成之對該面之密接性與剪裁之容易性(即，剪裁性)之平衡，因此認為本燒結接合用片材適於對接合對象物之接合預定面轉印性較佳地(即，以相當於接合預定面之形狀與尺寸)供給燒結接合用組合物。
如此，本燒結接合用片材適於向接合對象物之接合預定面適當地供給燒結接合用材料。此種燒結接合用片材適於良率較佳地製造包含半導體晶片燒結接合部位之半導體裝置。
本燒結接合用片材藉由上述條件下之SAICAS法所測定之23℃下之剪切強度較佳為2～40 MPa。於本燒結接合用片材中，藉由上述條件下之SAICAS法所測定之23℃下之剪切強度為2 MPa以上之構成就以保持片材形狀之片材體之形式操作本燒結接合用片材之方面而言較佳。於本燒結接合用片材中，藉由上述條件下之SAICAS法所測定之23℃下之剪切強度為40 MPa以下之構成就本燒結接合用片材不會變得過硬而發揮良好之剪裁性之方面而言較佳。關於本燒結接合用片材，就其良好之剪裁性之觀點而言，藉由SAICAS法所測定之23℃下之剪切強度較佳為2～35 MPa，更佳為2～32 MPa。
本燒結接合用片材於利用上述條件下之奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f較佳為30～100 μN。本燒結接合用片材中，利用上述條件下之奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f為30 μN以上(即，燒結接合用片材作用於自燒結接合用片材拔出之壓頭之最大拉拽力為30 μN以上)之構成就於本燒結接合用片材表面獲得較高之密接力之方面而言較佳。就於燒結接合用片材表面獲得較高之密接力之觀點而言，該最小荷重f較佳為32 μN以上，更佳為35 μN以上。另一方面，於本燒結接合用片材中，上述最小荷重f為100 μN以下(即，燒結接合用片材作用於自燒結接合用片材拔出之壓頭之最大拉拽力為100 μN以下)之構成例如於本燒結接合用片材帶有覆蓋其表面之隔離件等剝離材之情形時，就必要時自本燒結接合用片材適當地剝離該剝離材之方面而言較佳。就對燒結接合用片材確保此種剝離性之觀點而言，該最小荷重f較佳為80 μN以下，更佳為75 μN以下。適於獲得良好之密接性之本燒結接合用片材適於藉由半導體裝置製造過程中之如上所述之轉印步驟、即用以使燒結接合用片材中壓接於半導體晶片之部位殘留於該半導體晶片上之步驟進行燒結接合用材料向各半導體晶片之轉印。即，本燒結接合用片材適於適當地實施一次性對複數個半導體晶片供給燒結接合用材料之如上所述之轉印步驟。又，適於獲得良好之密接性之本燒結接合用片材適於在半導體裝置製造過程中之上述之暫時固定步驟、即用以將附有燒結接合用材料層之半導體晶片暫時固定於基板之步驟中抑制暫時固定之該半導體晶片產生錯位。
本燒結接合用片材之黏合劑成分較佳為包含高分子黏合劑及/或低分子黏合劑。此種構成就於燒結接合用片材中調整其彈性模數或黏著力等各種物性之方面而言較佳。
於本燒結接合用片材包含高分子黏合劑之情形時，該高分子黏合劑較佳為包含熱分解性高分子黏合劑。於本發明中，所謂熱分解性高分子黏合劑係指於燒結接合用之高溫加熱過程中可熱分解之黏合劑成分。該構成就於使用本燒結接合用片材進行燒結接合之接合對象物間所形成之燒結層中降低有機殘渣之方面而言較佳。並且，根據該構成，容易於上述暫時固定之溫度、例如70℃及其附近之溫度範圍內，利用熱分解性高分子黏合劑之黏彈性來確保本燒結接合用片材或來自其之燒結接合用材料層之凝聚力，因此容易確保該片材或該層之接著力。因此，本構成就如下方面而言較佳，即抑制於接合對象物間介存有來自本燒結接合用片材之燒結接合用材料層之狀態下將接合對象物彼此壓接時或壓接後該等接合對象物產生錯位。
本燒結接合用片材中之熱分解性高分子黏合劑等高分子黏合劑之重量平均分子量較佳為10000以上。此種構成就利用熱分解性高分子黏合劑等高分子黏合劑之黏彈性來確保本燒結接合用片材或來自其之燒結接合用材料層的凝聚力或接著力之方面而言較佳。
本燒結接合用片材中之熱分解性高分子黏合劑等高分子黏合劑較佳為包含聚碳酸酯樹脂及/或丙烯酸系樹脂。如上所述，於使用本燒結接合用片材來實現燒結接合之過程中，利用來自本燒結接合用片材之燒結接合用材料層將接合對象物間暫時固定後進行燒結接合用之高溫加熱。燒結接合用之高溫加熱例如於包含300℃及其附近之溫度範圍內進行，結果聚碳酸酯樹脂及丙烯酸系樹脂作為於300℃左右之溫度下會分解、揮散之高分子黏合劑而容易準備。因此，本構成就於使用本燒結接合用片材進行燒結接合之接合對象物間所形成之燒結層中降低有機殘渣之方面而言較佳。存在燒結層中之有機殘渣越少則該燒結層越牢固之傾向，因此於該燒結層中容易獲得較高之接合可靠性。
本燒結接合用片材中之低分子黏合劑較佳為包含沸點低於熱分解性高分子黏合劑之熱分解開始溫度之低沸點黏合劑。此種構成適於在本燒結接合用片材中確保良好之黏性，因此適於確保對半導體晶片或基材等其他構件之良好密接性。
本燒結接合用片材中之高分子黏合劑與低分子黏合劑之比率(高分子黏合劑/低分子黏合劑)例如為0.1以上，較佳為0.15以上，更佳為0.2以上。又，該比率例如為3以下，較佳為2.5以下，更佳為2.0以下，進而較佳為1.5以下。此種構成就將本燒結接合用片材之藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)之比率(F/f)調整為特定範圍之方面而言較佳。
本燒結接合用片材中之燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。此種構成就於使用本燒結接合用片材進行燒結接合之接合對象物間形成牢固燒結層之方面而言較佳。
本燒結接合用片材中之燒結性粒子之含有比率較佳為60～99質量%，更佳為65～98質量%，更佳為70～97質量%。此種構成就謀求由本燒結接合用片材形成之燒結層之高密度化之方面而言較佳。
根據本發明之第2態樣，提供一種附有基材之燒結接合用片材。該附有基材之燒結接合用片材具有包含基材、及本發明之第1態樣之上述燒結接合用片材之積層結構。本發明之燒結接合用片材亦可如此帶有基材。此種附有基材之燒結接合用片材容易操作，根據附有基材之燒結接合用片材，例如容易實施進行貼合作業與其後之剝離作業之上述之轉印步驟。
圖2係作為本發明之一實施形態之附有基材之燒結接合用片材之片材體X的部分剖面模式圖。片材體X具有包含基材B、及本發明之一實施形態之燒結接合用片材10之積層結構。
基材B係於片材體X中作為支持體發揮功能之要素。基材B例如為塑膠基材，作為該塑膠基材，可較佳地使用塑膠膜。作為塑膠基材之構成材料，例如可列舉：聚烯烴、聚酯、聚胺基甲酸酯、聚碳酸酯、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚氯乙烯、聚偏二氯乙烯、聚苯硫醚、聚芳醯胺、氟樹脂、纖維素系樹脂、及聚矽氧樹脂。作為聚烯烴，例如可列舉：低密度聚乙烯、直鏈狀低密度聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、乙烯-丁烯共聚物、及乙烯-己烯共聚物。作為聚酯，例如可列舉：聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、及聚對苯二甲酸丁二酯。基材B可包含一種材料，亦可包含兩種以上之材料。基材B可具有單層結構，亦可具有多層結構。於基材B包含塑膠膜之情形時，該基材B可為無延伸膜，亦可為單軸延伸膜，亦可為雙軸延伸膜。又，基材B亦可為於燒結接合用片材10側具有形成黏著面之黏著劑層之切割膠帶等黏著帶或黏著片材。其黏著劑層亦可為藉由紫外線照射進行硬化而產生黏著力之降低之紫外線硬化性黏著劑層。
燒結接合用片材10係用於將接合對象物間進行燒結接合者，且係至少包含含有導電性金屬之燒結性粒子與黏合劑成分之片狀燒結接合用組合物。燒結接合用片材10亦可於基材B上具有圓形或四邊形等特定之俯視形狀。又，亦可於單一之基材B上設置特定之俯視形狀之複數個燒結接合用片材10。
燒結接合用片材10中之燒結性粒子係含有導電性金屬元素並且能夠進行燒結之粒子。作為導電性金屬元素，例如可列舉：金、銀、銅、鈀、錫、及鎳。作為此種燒結性粒子之構成材料，例如可列舉：金、銀、銅、鈀、錫、鎳、及選自該等之群中之兩種以上之金屬之合金。作為燒結性粒子之構成材料，亦可列舉：氧化銀、或氧化銅、氧化鈀、氧化錫等金屬氧化物。又，燒結性粒子亦可為具有核殼結構之粒子。例如，燒結性粒子亦可為具有以銅作為主成分之核、及以金或銀等作為主成分且被覆核之殼的核殼結構粒子。於本實施形態中，燒結性粒子較佳為包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。此種構成就於使用燒結接合用片材10進行燒結接合之接合對象物間形成牢固燒結層之方面而言較佳。又，就於所形成之燒結層中實現較高導電性及較高導熱性之觀點而言，作為燒結性粒子，較佳為銀粒子及銅粒子。此外，就耐氧化性之觀點而言，銀粒子容易處理，故而較佳。例如，於在半導體晶片燒結接合於附有鍍銀之銅基板時使用包含銅粒子作為燒結性粒子之燒結材的情形時，必須於氮氣氛圍下等惰性環境下進行燒結製程，但於使用銀粒子形成燒結性粒子之燒結材之情形時，即便於空氣氛圍下亦能夠適當地實行燒結製程。
就確保燒結接合用片材10之表面之平坦性之觀點而言，所使用之燒結性粒子之平均粒徑較佳為10000 nm以下，更佳為3000 nm以下，更佳為1000 nm以下，更佳為500 nm以下。就使燒結接合用片材10或用以形成其之組合物中之燒結性粒子實現良好之分散性之觀點而言，燒結性粒子之平均粒徑較佳為1 nm以上，更佳為10 nm以上，更佳為50 nm以上。燒結性粒子之平均粒徑可藉由使用掃描式電子顯微鏡(SEM)所進行之觀察來測量。
就實現可靠性較高之燒結接合之觀點而言，燒結接合用片材10中之燒結性粒子之含有比率較佳為60～99質量%，更佳為65～98質量%，更佳為70～97質量%。
燒結接合用片材10中之黏合劑成分於本實施形態中至少包含高分子黏合劑與低分子黏合劑，亦可進而包含塑化劑等其他成分。
燒結接合用片材中之高分子黏合劑較佳為熱分解性高分子黏合劑。熱分解性高分子黏合劑係於燒結接合用之高溫加熱過程中可熱分解之黏合劑成分，且係於該加熱過程前有助於保持燒結接合用片材10之片材形狀之要素。於本實施形態中，就確保片材形狀保持功能之觀點而言，熱分解性高分子黏合劑係常溫(23℃)下為固體之材料。作為此種熱分解性高分子黏合劑，例如可列舉聚碳酸酯樹脂及丙烯酸系樹脂。燒結接合用片材10較佳為包含聚碳酸酯樹脂及/或丙烯酸系樹脂作為高分子黏合劑或熱分解性高分子黏合劑。
作為上述聚碳酸酯樹脂，例如可列舉於主鏈之碳酸酯基(-O-CO-O-)間不含苯環等芳香族化合物而包含脂肪族鏈之脂肪族聚碳酸酯、及於主鏈之碳酸酯基(-O-CO-O-)間包含芳香族化合物之芳香族聚碳酸酯。作為脂肪族聚碳酸酯，例如可列舉聚碳酸乙二酯及聚碳酸丙二酯。作為芳香族聚碳酸酯，可列舉於主鏈包含雙酚A結構之聚碳酸酯。
作為上述丙烯酸系樹脂，例如可列舉具有碳數4～18之直鏈狀或支鏈狀之烷基之丙烯酸酯及/或甲基丙烯酸酯之聚合物。以下，用「(甲基)丙烯酸」來表示「丙烯酸」及/或「甲基丙烯酸」，用「(甲基)丙烯酸酯」來表示「丙烯酸酯」及/或「甲基丙烯酸酯」。關於用以形成作為熱分解性高分子黏合劑之丙烯酸系樹脂之(甲基)丙烯酸酯之烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、及十八烷基。
上述丙烯酸系樹脂亦可為包含來自上述(甲基)丙烯酸酯以外之其他單體之單體單元之聚合物。作為此種其他單體，例如可列舉：含羧基單體、酸酐單體、含羥基單體、含磺酸基單體、及含磷酸基單體。具體而言，作為含羧基單體，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、及丁烯酸。作為酸酐單體，例如可列舉順丁烯二酸酐或伊康酸酐。作為含羥基單體，例如可列舉：(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、及(甲基)丙烯酸4-(羥基甲基)環己基甲酯。作為含磺酸基單體，例如可列舉：苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、及(甲基)丙烯醯氧基萘磺酸。作為含磷酸基單體，例如可列舉2-羥基乙基丙烯醯基磷酸酯。
燒結接合用片材10中所含之高分子黏合劑或熱分解性高分子黏合劑之重量平均分子量較佳為10000以上。該分子量例如為1000000以下。高分子黏合劑之重量平均分子量設為藉由凝膠滲透層析法(GPC)進行測定並藉由聚苯乙烯換算而算出之值。
就適當地發揮上述片材形狀保持功能之觀點而言，燒結接合用片材10中所含之高分子黏合劑或熱分解性高分子黏合劑之含有比率較佳為0.1～20質量%，更佳為0.5～18質量%，更佳為1～15質量%。
燒結接合用片材10中之低分子黏合劑較佳為低沸點黏合劑。低沸點黏合劑係沸點低於熱分解性高分子黏合劑等高分子黏合劑之熱分解開始溫度之黏合劑成分。於本實施形態中，低沸點黏合劑設為使用動態黏彈性測定裝置(商品名「HAAKE MARS III」，Thermo Fisher Scientfic公司製造)所測定之23℃下之黏度顯示1×105 Pa・s以下的液狀或半液狀者。於本黏度測定中，使用20 mm
Figure 02_image001
之平行板作為治具，將板間間隙設為100 μm，將旋轉剪切中之剪切速度設為1 s-1 。
作為上述之低沸點黏合劑，例如可列舉：萜烯醇類、除萜烯醇類以外之醇類、伸烷基二醇烷基醚類、及除伸烷基二醇烷基醚類以外之醚類。作為萜烯醇類，例如可列舉：異𦯉基環己醇、香茅醇、香葉草醇、橙花醇、香芹醇、及α-萜品醇。作為除萜烯醇類以外之醇類，例如可列舉：戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二乙二醇、丙二醇、丁二醇、及2,4-二乙基-1,5-戊二醇。作為伸烷基二醇烷基醚類，例如可列舉：乙二醇丁醚、二乙二醇甲醚、二乙二醇乙醚、二乙二醇丁醚、二乙二醇異丁醚、二乙二醇己醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丁醚、二乙二醇丁基甲醚、二乙二醇異丙基甲醚、三乙二醇甲醚、三乙二醇二甲醚、三乙二醇丁基甲醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、及三丙二醇二甲醚。作為除伸烷基二醇烷基醚類以外之醚類，例如可列舉：乙二醇乙醚乙酸酯、乙二醇丁醚乙酸酯、二乙二醇乙醚乙酸酯、二乙二醇丁醚乙酸酯、及二丙二醇甲醚乙酸酯。作為燒結接合用片材10中之成分，可使用一種低沸點黏合劑，亦可使用兩種以上之低沸點黏合劑。就常溫下之穩定性之觀點而言，燒結接合用片材10中之低沸點黏合劑較佳為萜烯醇類，更佳為異𦯉基環己醇。
低分子黏合劑之分子量並無特別限定，例如為500以下，較佳為450以下，更佳為400以下，進而較佳為350以下，尤佳為300以下。又，低分子黏合劑之分子量例如為50以上，較佳為100以上，更佳為150以上，進而較佳為200以上。
低沸點黏合劑之沸點只要低於熱分解性高分子黏合劑等高分子黏合劑之熱分解開始溫度，則並無特別限定，例如為500℃以下，較佳為450℃以下，更佳為400℃以下，進而較佳為350℃以下。又，低沸點黏合劑之沸點例如為50℃以上，較佳為100℃以上，更佳為150℃以上，進而較佳為200℃以上，尤佳為250℃以上。
關於燒結接合用片材10中之低沸點黏合劑等低分子黏合劑之含有比率，就於該片材之表面確保良好之黏性之觀點而言，例如為1～50質量%，較佳為2～50質量%，更佳為3～40質量%。
燒結接合用片材10中之高分子黏合劑與低分子黏合劑(低沸點黏合劑)之比率(高分子黏合劑/低分子黏合劑)並無特別限定，就適當地發揮燒結接合用片材10之片材形狀保持功能之觀點而言，例如為0.1以上，較佳為0.15以上，更佳為0.2以上。又，就於該片材之表面確保良好之黏性、密接性之觀點而言，該比率例如為3以下，較佳為2.5以下，更佳為2.0以下，進而較佳為1.5以下。又，該比率處於上述範圍內就如下方面而言較佳，即，將燒結接合用片材10之藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)之比率(F/f)調整為特定範圍。
燒結接合用片材10之23℃下之厚度較佳為5 μm以上，更佳為10 μm以上，且較佳為300 μm以下，更佳為150 μm以下。
燒結接合用片材10或形成其之燒結接合用組合物之70℃下之黏度例如為5×103 ～1×107 Pa・s，較佳為1×104 ～1×106 Pa・s。
燒結接合用片材10藉由SAICAS法所測定之23℃下之剪切強度較佳為2～40 Mpa，較佳為2～35 MPa，更佳為2～32 MPa。於本實施形態中，所謂藉由SAICAS法所測定之剪切強度，設為於以下之條件下使用作為Daipla Wintes股份有限公司製造之裝置之SAICAS(Surface And Interfacial Cutting Analysis System)所測定之剪切強度(剪切破壞強度)：關於切刃，刃寬1 mm、斜角10°及隙角10°、切刃之水平速度為10 μm/s且垂直速度為0.5 μm/s之定速度模式；以及特定之溫度。該裝置能夠對基材上之作為測定對象物之材料層實施利用切刃之斜向切削，且可由關於其切削過程中之作用於切刃之水平力與垂直力及切刃之垂直位移之資料求出材料層之剪切強度等。燒結接合用片材10之上述剪切強度之調整例如可藉由調整燒結接合用片材10中之高分子黏合劑及低分子黏合劑之各調配量、或調整關於高分子黏合劑之黏彈性來進行。
燒結接合用片材10於利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f較佳為30～100 μN。具體而言，該最小荷重f較佳為30 μN以上，更佳為32 μN以上，更佳為35 μN以上，又，較佳為100 μN以下，更佳為80 μN以下，更佳為75 μN以下。利用奈米壓痕法之荷重-位移測定可使用奈米壓痕儀(商品名「Triboindenter」，Hysitron公司製造)來進行。於其測定中，測定模式設為單一壓入測定，測定溫度設為23℃，使用壓頭設為Berkovich(三角錐)型之金剛石壓頭，荷重施加過程中達到之最大荷重(設定值)設為500 μN，荷重施加過程中之壓頭之壓入速度設為100 μN/s，卸載過程中之壓頭之拔出速度設為100 μN/s。關於燒結接合用片材10之上述最小荷重f之調整例如可藉由調整燒結接合用片材10中之低分子黏合劑及高分子黏合劑之各調配量、或調整關於低分子黏合劑之黏彈性來進行。
於燒結接合用片材10中，藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1，較佳為滿足0.15≦F/f≦0.9。
燒結接合用片材10例如可藉由如下方式製作：將上述之各成分於溶劑中進行混合而製備清漆，於基材B上塗佈該清漆而形成塗膜，使該塗膜乾燥。作為清漆製備用之溶劑，可使用有機溶劑或醇溶劑。
圖3至圖7係表示使用上述之片材體X或燒結接合用片材10所進行之半導體裝置製造方法之一例中之一部分步驟。本方法係用以製造具備半導體晶片之燒結接合部位之功率半導體裝置等半導體裝置之方法。
於本方法中，首先，如圖3(a)所示，準備具有燒結接合用片材10之上述之片材體X及複數個晶片C。複數個晶片C各自為已經嵌入有特定半導體元件之半導體晶。複數個晶片C於加工用膠帶T1之黏著面T1a上以鄰接晶片間留有空隙之方式排列。作為用以形成晶片C之晶片本體之構成材料，例如可列舉碳化矽(SiC)或氮化鎵(GaN)等功率半導體裝置用之半導體材料。晶片C之厚度例如為20～1000 μm。於各晶片C中，供貼附燒結接合用片材10之側之表面(圖3中為圖中上表面)已經形成有外部電極(圖示省略)。外部電極例如為銀平面電極，其厚度例如為10 nm～1000 nm。作為外部電極之銀平面電極亦可積層形成於半導體晶片表面所形成之鈦薄膜上。該鈦薄膜之厚度例如為10 nm～1000 nm。該等銀平面電極及鈦薄膜例如可藉由蒸鍍法形成。又，於各晶片C之另一面(圖3中為圖中下表面)視需要形成有其他外部電極(圖示省略)。
於本半導體裝置製造方法中，繼而進行轉印步驟。於轉印步驟中，首先，如圖3(b)所示，對加工用膠帶T1上之複數個晶片C壓接片材體X之燒結接合用片材10之側來進行貼合。作為用以貼合之按壓機構，例如可列舉壓接輥。貼合溫度例如處於室溫至200℃之範圍，較佳為50～100℃。用以貼合之荷重例如為0.01～10 MPa。貼合之後，如圖3(c)所示，一面使燒結接合用片材10之一部分殘留於晶片C側，一面進行基材B之剝離作業。藉由此種貼合作業與其後之剝離作業進行燒結接合用材料自燒結接合用片材10向各晶片C之轉印，而於晶片C上產生作為自周圍分離出之燒結接合用片材小片之燒結接合用材料層11。於本步驟中，可一次性地對各晶片C供給燒結接合用材料。
於本半導體裝置製造方法中，繼而，如圖4所示，將晶片C與燒結接合用片材10中密接於該晶片C之部分一起自加工用膠帶T1拾取，獲得帶有來自燒結接合用片材10之燒結接合用材料層11之晶片C(拾取步驟)。於本實施形態之拾取步驟中，具體而言，於加工用膠帶T1之圖中下側使拾取機構之頂銷構件21上升，介隔加工用膠帶T1將拾取對象之晶片C頂起。於此種頂起之後，藉由對燒結接合用材料層11側之吸附作用，而利用吸附筒夾22吸附保持該晶片C。如此可進行附有燒結接合用材料層11之晶片C之拾取。
於本實施形態中，繼而，如圖5所示，自拾取有附有燒結接合用材料層之晶片C之吸附筒夾22向另一吸附筒夾23交接該晶片C。吸附筒夾23藉由對附有燒結接合用材料層之晶片C之晶片側之吸附作用而保持該晶片C。
繼而，如圖6(a)所示，將附有燒結接合用材料層之晶片C經由其燒結接合用材料層11壓接於支持基板S來暫時固定(暫時固定步驟)。具體而言，例如使用晶片安裝機，將附有燒結接合用材料層之晶片C經由其燒結接合用材料層11按壓於支持基板S來暫時固定。作為支持基板S，例如可列舉表面帶有銅配線等配線之絕緣電路基板、及引線框架。支持基板S中之晶片搭載部位可為銅配線或引線框架等基體表面，亦可為形成於基體表面上之鍍覆膜之表面。作為該鍍覆膜，例如可列舉：鍍金膜、鍍銀膜、鍍鎳膜、鍍鈀膜、及鍍鉑膜。於本步驟中，暫時固定用之溫度條件例如處於室溫至300℃之範圍，按壓之荷重例如為0.01～50 MPa，接合時間例如為0.01～300秒鐘。
繼而，如圖6(b)所示，經過加熱過程而由介存於暫時固定之晶片C與支持基板S之間之燒結接合用材料層11形成燒結層12，從而將晶片C燒結接合於支持基板S(燒結接合步驟)。具體而言，藉由經過特定之高溫加熱過程，於支持基板S與晶片C之間使燒結接合用材料層11中之低分子黏合劑揮發，視需要使高分子黏合劑之全部或一部分進行熱分解而揮散，而且使燒結性粒子之導電性金屬進行燒結。藉此，於支持基板S與晶片C之間形成燒結層12，一面將晶片C接合於支持基板S一面取得與支持基板S側之電性連接。於本步驟中，燒結接合之溫度條件例如處於150～400℃之範圍。用以燒結接合之壓力例如為60 MPa以下。又，燒結接合之接合時間例如為0.3～300分鐘。例如於該等條件之範圍內適當地設定用以實施燒結接合步驟之溫度分佈或壓力分佈。如上之燒結接合步驟可使用能夠同時進行加熱與加壓之裝置來進行。作為此種裝置，例如可列舉覆晶接合機及平行平板壓製機。又，就參與燒結接合之金屬之抗氧化之觀點而言，本步驟較佳為於氮氣氛圍下、減壓下、或還原氣體氛圍下進行。
於本半導體裝置製造方法中，繼而，如圖7(a)所示，將晶片C之電極部(圖示省略)與支持基板S所具有之端子部(圖示省略)視需要經由接合線W進行電性連接(打線接合步驟)。晶片C之電極部或支持基板S之端子部與接合線W之接線例如藉由帶有加熱之超音波熔接來實現。作為接合線W，例如可使用金線、鋁線、或銅線。打線接合中之線加熱溫度例如為80～250℃。又，其加熱時間例如為數秒～數分鐘。
繼而，如圖7(b)所示，形成用以保護支持基板S上之晶片C或接合線W之密封樹脂R(密封步驟)。於本步驟中，例如藉由使用模具所進行之轉注成形技術而形成密封樹脂R。作為密封樹脂R之構成材料，例如可使用環氧系樹脂。於本步驟中，用以形成密封樹脂R之加熱溫度例如為165～185℃，加熱時間例如為60秒～數分鐘。於在本密封步驟中密封樹脂R之硬化未充分進行之情形時，於本步驟之後進行用以使密封樹脂R完全硬化之後硬化步驟。
以如上方式可製造具備半導體晶片之燒結接合部位之半導體裝置。
如上所述，於燒結接合用片材10中，藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1，較佳為滿足0.15≦F/f≦0.9。關於包含含有導電性金屬之燒結性粒子與黏合劑成分之組合物之片材體，本發明者等人得出以下見解：上述剪切強度F(MPa)及上述最小荷重f(μN)滿足0.1≦F/f≦1、較佳為滿足0.15≦F/f≦0.9之構成適於經過對接合對象物之接合預定面之壓接以相當於該面之形狀及尺寸向該面供給燒結接合用組合物。例如，如下述之實施例及比較例所示。認為於燒結接合用片材10中，將上述剪切強度F(MPa)除以上述最小荷重f(μN)所得之值為0.1以上、較佳為0.15以上且為1以下、較佳為0.9以下之構成適於使燒結接合用片材10取得藉由對接合對象物之接合預定面之壓接所達成之對該面之密接性與剪裁之容易性(即，剪裁性)之平衡，因此認為燒結接合用片材10適於對接合對象物之接合預定面轉印性較佳地(即，以相當於接合預定面之形狀與尺寸)供給燒結接合用組合物。
如此，燒結接合用片材10適於向接合對象物之接合預定面適當地供給燒結接合用材料。此種燒結接合用片材10適於良率較佳地製造包含半導體晶片燒結接合部位之半導體裝置。
如上所述，燒結接合用片材10藉由SAICAS法所測定之23℃下之剪切強度較佳為2～40 MPa，較佳為2～35 MPa，更佳為2～32 MPa。於燒結接合用片材10中，藉由上述條件下之SAICAS法所測定之23℃下之剪切強度為2 MPa以上之構成就以保持片材形狀之片材體之形式操作燒結接合用片材10之方面而言較佳。於燒結接合用片材10中，藉由上述條件下之SAICAS法所測定之23℃下之剪切強度為40 MPa以下，較佳為32 MPa以下，更佳為32 MPa以下之構成就燒結接合用片材10不會變得過硬而發揮良好之剪裁性之方面而言較佳。
如上所述，燒結接合用片材10於利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f較佳為30～100 μN。於燒結接合用片材10中，利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f為30 μN以上(即，燒結接合用片材10作用於自燒結接合用片材10拔出之壓頭之最大拉拽力為30 μN以上)之構成就於燒結接合用片材10表面獲得較高之密接力之方面而言較佳。就於燒結接合用片材10表面獲得較高之密接力之觀點而言，該最小荷重f較佳為32 μN以上，更佳為35 μN以上。另一方面，於燒結接合用片材10中，上述最小荷重f為100 μN以下(即，燒結接合用片材10作用於自燒結接合用片材10拔出之壓頭之最大拉拽力為100 μN以下)之構成例如於燒結接合用片材10帶有覆蓋其表面之隔離件等剝離材之情形時，就於需要時自燒結接合用片材10適當地剝離該剝離材之方面而言較佳。就對燒結接合用片材10確保此種剝離性之觀點而言，該最小荷重f如上所述，較佳為80 μN以下，更佳為75 μN以下。適於獲得良好之密接性之燒結接合用片材10適於藉由半導體裝置製造過程中之如上所述之轉印步驟、即用以使燒結接合用片材10中壓接於晶片C之部位殘留於該晶片C上之步驟進行燒結接合用材料向各晶片C之轉印。即，燒結接合用片材10適於適當地實施一次性對複數個晶片C供給燒結接合用材料之如上所述之轉印步驟。又，適於獲得良好之密接性之燒結接合用片材10適於在半導體裝置製造過程中之上述之暫時固定步驟、即用以將附有燒結接合用材料層11之晶片C暫時固定於基板S之步驟中抑制被暫時固定之該晶片C產生錯位。
如上所述，燒結接合用片材10之黏合劑成分較佳為包含熱分解性高分子黏合劑。根據此種構成，容易於上述之暫時固定之溫度、例如70℃及其附近之溫度範圍內，利用熱分解性高分子黏合劑之黏彈性確保燒結接合用片材10或來自其之燒結接合用材料層11之凝聚力，因此容易確保燒結接合用片材10或燒結接合用材料層11之接著力。因此，本構成就如下面而言較佳，即抑制於在接合對象物間介存有來自燒結接合用片材10之燒結接合用材料層11之狀態下將接合對象物彼此壓接時或壓接後該等接合對象物產生錯位。
如上所述，燒結接合用片材10中之熱分解性高分子黏合劑等高分子黏合劑之重量平均分子量較佳為10000以上。此種構成就利用高分子黏合劑之黏彈性確保燒結接合用片材10或來自其之燒結接合用材料層11之凝聚力或接著力之方面而言較佳。
如上所述，燒結接合用片材10中之熱分解性高分子黏合劑等高分子黏合劑較佳為包含聚碳酸酯樹脂及/或丙烯酸系樹脂。如上所述，於使用燒結接合用片材10來實現燒結接合之過程中，將接合對象物間以來自燒結接合用片材10之燒結接合用材料層11暫時固定後進行燒結接合用之高溫加熱。燒結接合用之高溫加熱例如於包含300℃及其附近之溫度範圍內進行，聚碳酸酯樹脂及丙烯酸系樹脂作為於300℃左右之溫度下會分解、揮散之高分子黏合劑而容易準備。因此，本構成就於使用燒結接合用片材10進行燒結接合之接合對象物間所形成之燒結層12中降低有機殘渣之方面而言較佳。存在燒結層12中之有機殘渣越少則該燒結層12越牢固之傾向，因此於該燒結層12中容易獲得較高之接合可靠性。
如上所述，燒結接合用片材10中之低分子黏合劑包含沸點低於高分子黏合劑之熱分解開始溫度之低沸點黏合劑。此種構成適於在燒結接合用片材10中確保良好之黏性，因此適於確保對晶片C或基材B等其他構件之良好之密接性。因此，本構成就如下方面而言較佳，即抑制於在接合對象物間介存有來自燒結接合用片材10之燒結接合用材料層11之狀態下將接合對象物彼此壓接時或壓接後該等接合對象物產生錯位。
燒結接合用片材10中之燒結性粒子之含有比率較佳為60～99質量%，更佳為65～98質量%，更佳為70～97質量%。此種構成就謀求由燒結接合用片材10所形成之燒結層12之高密度化之方面而言較佳。 [實施例]
[實施例1] 將混合攪拌機(hybrid mixer)(商品名「HM-500」，KEYENCE股份有限公司製造)以其攪拌模式來使用，將作為燒結性粒子P1 之銀粒子56.51質量份、作為高分子黏合劑(熱分解性高分子黏合劑)之聚碳酸酯樹脂(商品名「QPAC40」，重量平均分子量為150000，常溫下為固體，Empower Materials公司製造)0.82質量份、作為低分子黏合劑(低沸點黏合劑)之異𦯉基環己醇(商品名「Terusolve MTPH」，常溫下為液體，日本萜烯化學工業股份有限公司製造)3.29質量份、作為溶劑之甲基乙基酮39.38質量份加以混合而製備清漆。攪拌時間設為3分鐘。作為燒結性粒子P1 之上述之銀粒子係以質量比9：1包含第1銀粒子(平均粒徑60 nm，DOWA Electronics股份有限公司製造)與第2銀粒子(平均粒徑1100 nm，三井金屬礦業股份有限公司製造)者。然後，將所得之清漆塗佈於作為基材之脫模處理膜(商品名「MRA38」，三菱化學股份有限公司製造)後使之乾燥，形成厚度54 μm之燒結接合用片材。乾燥溫度設為110℃，乾燥時間設為3分鐘。燒結接合用片材中之燒結性粒子含有比率為93.2質量%。如此於基材上製作包含燒結性粒子、高分子黏合劑及低分子黏合劑之實施例1之燒結接合用片材。將關於實施例1之燒結接合用片材之組成揭示於表1(下述實施例及比較例亦同樣如此；又，於表1中，表示組成之各數值之單位為相對之「質量份」)。
[實施例2] 將燒結性粒子P1 之調配量設為56.25質量份以替代56.51質量份、將聚碳酸酯樹脂(商品名「QPAC40」，Empower Materials公司製造)之調配量設為2.16質量份以替代0.82質量份、將異𦯉基環己醇(商品名「Terusolve MTPH」，日本萜烯化學工業股份有限公司製造)之調配量設為2.16質量份以替代3.29質量份、及將甲基乙基酮之使用量設為39.43質量份以替代39.38質量份，除此以外，與實施例1之燒結接合用片材同樣地製作實施例2之燒結接合用片材。關於實施例2之燒結接合用片材，燒結性粒子含有比率為93.2質量%，厚度為57 μm。
[實施例3] 使用作為燒結性粒子P2 之銅粒子(平均粒徑200 nm，三井金屬礦業股份有限公司製造)63.36質量份以替代燒結性粒子P1 56.51質量份、將聚碳酸酯樹脂(商品名「QPAC40」，Empower Materials公司製造)之調配量設為5.43質量份以替代0.82質量份、將異𦯉基環己醇(商品名「Terusolve MTPH」，日本萜烯化學工業股份有限公司製造)之調配量設為6.11質量份以替代3.29質量份、及將甲基乙基酮之使用量設為25.1質量份以替代39.38質量份，除此以外，與實施例1之燒結接合用片材同樣地製作實施例3之燒結接合用片材。關於實施例3之燒結接合用片材，燒結性粒子含有比率為84.6質量%，厚度為53 μm。
[比較例1] 將燒結性粒子P1 之調配量設為55.69質量份以替代56.51質量份、不使用聚碳酸酯樹脂(商品名「QPAC40」)、將異𦯉基環己醇(商品名「Terusolve MTPH」，日本萜烯化學工業股份有限公司製造)之調配量設為3.98質量份以替代3.29質量份、及將甲基乙基酮之使用量設為39.33質量份以替代39.38質量份，除此以外，與實施例1之燒結接合用片材同樣地製作比較例1之燒結接合用片材。關於比較例1之燒結接合用片材，燒結性粒子含有比率為93.2質量%，厚度為55 μm。
[比較例2] 將燒結性粒子P1 之調配量設為55.99質量份以替代56.51質量份、將聚碳酸酯樹脂(商品名「QPAC40」，Empower Materials公司製造)之調配量設為3.64質量份以替代0.82質量份、將異𦯉基環己醇(商品名「Terusolve MTPH」，日本萜烯化學工業股份有限公司製造)之調配量設為0.91質量份以替代3.29質量份、及將甲基乙基酮之使用量設為39.46質量份以替代39.38質量份，除此以外，與實施例1之燒結接合用片材同樣地製作比較例2之燒結接合用片材。關於比較例2之燒結接合用片材，燒結性粒子含有比率為93.2質量%，厚度為57 μm。
＜剪切強度＞ 關於實施例1～3及比較例1、2之各燒結接合用片材(單面帶有基材)，藉由使用作為Daipla Wintes股份有限公司製造之斜向切削裝置之SAICAS DN-20型所進行之SAICAS法測定23℃下之剪切強度。本測定中之用以斜向切削之切刃係刃寬為1 mm，斜角為10°，且隙角為10°者。本測定係於23℃之溫度條件下以定速度模式(切刃之水平速度為10 μm/s且垂直速度為0.5 μm/s)進行。將其測定結果揭示於表1。剪切強度FS 可由對材料層之斜向切削中之作用於切刃之水平力FH 、剪切面之面積D、及剪切角θ(剪切面相對於藉由斜向切削所形成之完工面所成之角度)，藉由FS ＝(FH /2D)cotθ之計算式而導出，將對燒結接合用片材之斜向切削過程中距片材露出面之深度相對於片材厚度整體而為30～70%之區域內所示之FS 之最大值設為各測定之剪切強度F(MPa)。
＜利用奈米壓痕法之荷重-位移測定＞ 關於實施例1～3及比較例1、2之各燒結接合用片材(單面帶有基材)，使用奈米壓痕儀(商品名「Triboindenter」，Hysitron公司製造)，進行利用奈米壓痕法之荷重-位移測定。供於測定之試樣片係自各燒結接合用片材切出10 mm見方之尺寸而準備者。於本測定中，測定模式設為單一壓入測定，測定溫度設為23℃，使用壓頭設為Berkovich(三角錐)型之金剛石壓頭，荷重施加過程中達到之最大荷重(設定值)設為500 μN，荷重施加過程中之壓頭之壓入速度設為100 μN/s，卸載過程中之壓頭之拔出速度設為100 μN/s。將藉由本測定所求出之最小荷重f(μN)揭示於表1。又，亦對應各燒結接合用片材將上述之剪切強度F(MPa)除以最小荷重f(μN)所得之值揭示於表1中。
＜片材轉印性＞ 關於實施例1～3及比較例1、2之各燒結接合用片材(單面帶有基材)，以如下方式調查轉印性。首先，於附有基材之燒結接合用片材中之燒結接合用片材上以5 mm間隔載置一行5片之5 mm見方之矽晶片(厚度200 μm，於燒結接合用片材密接面側形成有鍍銀膜)。伴隨於燒結接合用片材之基材為三菱化學股份有限公司製造之「MRA38」(厚度38 μm)。然後，使該等帶有矽晶片之附有基材之燒結接合用片材通過具備壓接輥之貼合機，而使矽晶片密接於燒結接合用片材(壓接處理)。藉此，獲得基材、其上之燒結接合用片材及其上之矽晶片之積層體。於該壓接處理中，壓接輥之壓力為0.5 MPa，壓接輥速度為10 mm/s，壓接溫度為70℃(實施例1、2與比較例1、2)或90℃(實施例3)。於此種壓接處理之後，自上述之積層體剝離基材。然後，關於燒結接合用片材之轉印性，將5片矽晶片之全部中，與晶片實質上同尺寸之來自燒結接合用片材之燒結接合用材料轉印至晶片之情形評價為「良」，將5片矽晶片之全部或一部分中，與晶片實質上同尺寸之來自燒結接合用片材之燒結接合用材料未轉印至晶片之情形評價為「不良」。將其評價結果揭示於表1。
[評價] 於實施例1～3之燒結接合用片材中，藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1。上述實施例1～3之燒結接合用片材於上述之轉印性評價試驗中顯示良好之轉印性。
[表1]
   實施例1 實施例2 實施例3 比較例1 比較例2
燒結性粒子 P1 (銀粒子) 56.51 56.25 - 56.69 55.99
P2 (銅粒子) - - 63.36 - -
高分子黏合劑 聚碳酸酯樹脂 0.82 2.16 5.43 - 3.64
低分子黏合劑 異𦯉基環己醇 3.29 2.16 6.11 3.98 0.91
使用溶劑 甲基乙基酮 39.38 39.43 25.1 39.33 39.46
燒結接合用片材之厚度(μm) 54 57 53 55 57
剪切強度F(MPa) 14.1 32.3 15.5 2.19 43.6
最小荷重f(μN) 70.7 39.2 40.0 109 22.1
F/f 0.2 0.82 0.39 0.02 1.97
片材轉印性 良 良 良 不良 不良
作為以上之總結，以下列舉本發明之構成及其變化作為附記。
[附記1] 一種燒結接合用片材，其包含含有導電性金屬之燒結性粒子與黏合劑成分，且 藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1。 [附記2] 如附記1中記載之燒結接合用片材，其藉由SAICAS法所測定之23℃下之剪切強度F為2～40 MPa。 [附記3] 如附記1或2中記載之燒結接合用片材，其於利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f為30～100 μN。 [附記4] 如附記1至3中任一項記載之燒結接合用片材，其中上述黏合劑成分包含高分子黏合劑及/或低分子黏合劑。 [附記5] 如附記4中記載之燒結接合用片材，其中上述高分子黏合劑包含熱分解性高分子黏合劑。 [附記6] 如附記4或5中記載之燒結接合用片材，其中上述高分子黏合劑之重量平均分子量為10000以上。 [附記7] 如附記4至6中任一項記載之燒結接合用片材，其中上述高分子黏合劑包含聚碳酸酯樹脂及/或丙烯酸系樹脂。 [附記8] 如附記4至7中任一項記載之燒結接合用片材，其中上述低分子黏合劑包含沸點低於上述高分子黏合劑之熱分解開始溫度之低沸點黏合劑。 [附記9] 如附記4至8中任一項記載之燒結接合用片材，其中高分子黏合劑與低分子黏合劑之比率(高分子黏合劑/低分子黏合劑)為0.1以上，較佳為0.15以上、更佳為0.2以上。 [附記10] 如附記4至9中任一項記載之燒結接合用片材，其中高分子黏合劑與低分子黏合劑之比率(高分子黏合劑/低分子黏合劑)為3以下，較佳為2.5以下、更佳為2.0以下、進而較佳為1.5以下。 [附記11] 如附記1至10中任一項記載之燒結接合用片材，其中上述燒結性粒子包含選自由銀粒子、銅粒子、氧化銀粒子、及氧化銅粒子所組成之群中之至少一種。 [附記12] 如附記1至11中任一項記載之燒結接合用片材，其中上述燒結性粒子之含有比率為60～99質量%。 [附記13] 一種附有基材之燒結接合用片材，其具有包含基材、及如附記1至12中任一項記載之燒結接合用片材之積層結構。
10:燒結接合用片材 11:燒結接合用材料層 12:燒結層 21:頂銷構件 22:吸附筒夾 23:吸附筒夾 B:基材 C:晶片(半導體晶片) R:密封樹脂 S:支持基板(基板) T1,T2:加工用膠帶 T1a:黏著面 W:接合線 X:片材體
圖1係表示藉由奈米壓痕法所得之荷重-位移曲線之一例。 圖2係本發明之一實施形態之附有基材之燒結接合用片材之部分剖面模式圖。 圖3(a)～(c)係表示使用圖2所示之附有基材之燒結接合用片材所進行之半導體裝置製造方法之一例中之一部分步驟。 圖4係表示繼圖3所示之步驟之後之步驟。 圖5係表示繼圖4所示之步驟之後之步驟。 圖6(a)、(b)係表示繼圖5所示之步驟之後之步驟。 圖7(a)、(b)係表示繼圖6所示之步驟之後之步驟。
10:燒結接合用片材
B:基材
X:片材體

Claims (4)

  1. 一種燒結接合用片材，其包含含有導電性金屬之燒結性粒子與黏合劑成分，且 藉由SAICAS法所測定之23℃下之剪切強度F(MPa)、及利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f(μN)滿足0.1≦F/f≦1。
  2. 如請求項1之燒結接合用片材，其藉由SAICAS法所測定之23℃下之剪切強度F為2～40 MPa。
  3. 如請求項1或2之燒結接合用片材，其於利用奈米壓痕法之荷重-位移測定中之卸載過程中達到之最小荷重f為30～100 μN。
  4. 一種附有基材之燒結接合用片材，其具有包含基材、及如請求項1至3中任一項之燒結接合用片材之積層結構。
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