TW201437311A - 膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置 - Google Patents

膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置 Download PDF

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TW201437311A
TW201437311A TW103105325A TW103105325A TW201437311A TW 201437311 A TW201437311 A TW 201437311A TW 103105325 A TW103105325 A TW 103105325A TW 103105325 A TW103105325 A TW 103105325A TW 201437311 A TW201437311 A TW 201437311A
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Taiwan
Prior art keywords
adhesive
film
resin
semiconductor wafer
dicing tape
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TW103105325A
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English (en)
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TWI615452B (zh
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Yuki Sugo
Yuta Kimura
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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    • C08K3/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
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    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract

本發明提供一種可防止對半導體晶圓之熱影響、可抑制半導體晶圓之翹曲之膜狀接著劑，附膜狀接著劑之切晶帶及半導體裝置之製造方法。本發明係關於一種膜狀接著劑，其含有熱塑性樹脂及導電性粒子，於40℃下貼附於鏡面矽晶圓後，於25℃下測定之密著力為0.5N/10mm以上。

Description

膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置
本發明係關於一種膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法、及半導體裝置。
於半導體裝置之製造中，關於將半導體元件與金屬引線架等接著之方法(所謂之黏晶法)，自先前之金-矽共晶開始發展為利用焊料、樹脂膏之方法。當前利用使用導電性樹脂膏之方法。
然而，使用樹脂膏之方法存在如下問題：由於孔隙而使導電性下降，或者樹脂膏之厚度不均勻，由於樹脂膏之溢出而引起焊墊污染。為了解決該等問題，有使用膜狀接著劑代替樹脂膏之情形。
例如，於專利文獻1中提出一種接著膜，其係藉由調配特定之聚醯亞胺樹脂，而能夠於低溫下進行黏晶時之熱處理。另外，於專利文獻2中提出一種接著膜，其係藉由調配玻璃轉移溫度為-10~50℃之丙烯酸共聚物等而賦予可撓性，且作業性良好。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利特開平6-145639號公報
[專利文獻2]日本專利第4137827號公報
然而，以增加容量為目的，近年來之半導體裝置已輕薄短小化，單片化前之半導體元件(半導體晶圓)之厚度為100μm以下，非常薄，因此半導體晶圓易翹曲，其操作亦較困難。
專利文獻2之接著膜由於使用玻璃轉移溫度為-10℃以上之丙烯酸共聚物，因此彈性模數較高，為了與半導體晶圓牢固地貼附，必需於高溫下進行貼附。然而，若於高溫下進行貼附，則由於其熱，半導體晶圓會發生翹曲。另外，於專利文獻2中未對半導體晶圓之操作性進行研究。進而，於專利文獻2中由於單獨對半導體晶片進行拾取，因此亦存在產生晶片破裂或晶片缺損之可能性。
為解決上述課題，本發明之目的在於提供一種可防止對半導體晶圓之熱影響、可抑制半導體晶圓之翹曲之膜狀接著劑，附膜狀接著劑之切晶帶及半導體裝置之製造方法。
本發明係關於一種膜狀接著劑，其含有熱塑性樹脂及導電性粒子，於40℃下貼附於鏡面矽晶圓後，於25℃下測定之密著力為0.5N/10mm以上。上述膜狀接著劑由於可於40℃左右之低溫下與半導體晶圓良好地進行接著，因此無需於高溫下進行貼附。因此，可防止對半導體晶圓之熱影響、可抑制半導體晶圓之翹曲。
上述熱塑性樹脂之玻璃轉移溫度較佳為-40~-10℃。藉此，可良好地獲得低溫貼附性。
上述膜狀接著劑較佳為含有硬化性樹脂。藉此，可提高熱穩定性。
上述硬化性樹脂含有於25℃下為固形之硬化性樹脂及於25℃下為液狀之硬化性樹脂，且於25℃下為固形之硬化性樹脂之重量/於25℃下為液狀之硬化性樹脂之重量所表示之重量比率較佳為49/51~10/90。藉此，可良好地獲得低溫貼附性。
上述膜狀接著劑之厚度較佳為5~100μm。藉此，與半導體晶圓等之接著面積穩定。另外，可抑制膜狀接著劑之溢出。
25℃下之儲存彈性模數較佳為5MPa以上。藉此，可良好地進行拾取。
上述膜狀接著劑較佳為用作固晶膜。
本發明又關於一種附膜狀接著劑之切晶帶，其係於切晶帶上積層有上述膜狀接著劑。
若於半導體裝置之製造中使用上述附膜狀接著劑之切晶帶，則可對貼附於附膜狀接著劑之切晶帶之狀態之半導體晶圓進行操作，因此可減少對半導體晶圓單體進行操作之機會。因此，即便為近年來之薄型之半導體晶圓，亦可良好地進行操作。另外，於使用上述附膜狀接著劑之切晶帶之情形時，將半導體晶圓貼附於膜狀接著劑，由於使用上述膜狀接著劑，因此可抑制半導體晶圓之翹曲。
關於上述附膜狀接著劑之切晶帶，於剝離溫度為25℃、剝離速度為300mm/min之條件下，自上述切晶帶剝離上述膜狀接著劑時之剝離力較佳為0.01~3.00N/20mm。藉此，可防止晶片飛散，並且可良好地進行拾取。
本發明又關於一種半導體裝置之製造方法，其包括使用上述膜狀接著劑將半導體晶片固晶於被接著體之步驟。
本發明又關於一種半導體裝置，其係藉由上述製造方法而獲得。
根據本發明，可於40℃左右之低溫下將膜狀接著劑貼附於半導體晶圓，因此可防止對半導體晶圓之熱影響，可抑制半導體晶圓之翹曲。
1‧‧‧基材
2‧‧‧黏著劑層
2a‧‧‧黏著劑層2之對應於工件貼附部分之部分
2b‧‧‧其他部分
3、3'‧‧‧膜狀接著劑
3a‧‧‧膜狀接著劑3之半導體晶圓貼附部分
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被接著體
7‧‧‧焊線
8‧‧‧密封樹脂
10、12‧‧‧附膜狀接著劑之切晶帶
11‧‧‧切晶帶
圖1係本發明之一實施形態之附膜狀接著劑之切晶帶的剖面示意圖。
圖2係本發明之另一實施形態之附膜狀接著劑之切晶帶的剖面示意圖。
圖3係用以說明本發明之半導體裝置之一製造方法之圖。
本發明之膜狀接著劑於40℃下貼附於鏡面矽晶圓後，於25℃下測定之密著力為0.5N/10mm以上，較佳為0.6N/10mm以上，更佳為4N/10mm以上。若為0.5N/10mm以上，則膜狀接著劑可於40℃左右之低溫下與半導體晶圓良好地接著，因此可防止對半導體晶圓之熱影響，可抑制半導體晶圓之翹曲。另一方面，若未達0.5N/10mm，則密著力較低，有半導體晶圓自膜狀接著劑剝離之虞。密著力之上限並無特別限定，例如為10N/10mm以下。
於本說明書中，密著力意指將膜狀接著劑自鏡面矽晶圓剝離時之剝離力，可利用實施例中記載之方法進行測定。
膜狀接著劑之25℃下之儲存彈性模數較佳為5MPa以上，更佳為2×102MPa以上。若未達5MPa，則與切晶帶之密著力提高，具有拾取性下降之傾向。膜狀接著劑之25℃下之儲存彈性模數較佳為5×103MPa以下，更佳為3×103MPa以下，進而較佳為2.5×103MPa以下。若超過5×103MPa，則不易進行調配。儲存彈性模數可利用實施例中記載之方法進行測定。
膜狀接著劑之100℃下之儲存彈性模數較佳為0.01MPa以上，更佳為0.05MPa以上。若為0.01MPa以上，則膜狀接著劑於固晶時不易溢出。另一方面，膜狀接著劑之100℃下之儲存彈性模數較佳為1MPa以下，更佳為0.8MPa以下。若為1MPa以下，則於固晶時不易進入孔隙，易於實現穩定之固晶。
膜狀接著劑之表面粗糙度(Ra)較佳為0.1~1000nm。若未達0.1nm，則不易調配。另一方面，若超過1000nm，則有低溫貼附性下降之虞。另外，有固晶時與被接著體之貼附性亦下降之虞。
於175℃下加熱5小時後之測定溫度25℃下之電阻率越低則越佳，例如為1×10-2Ω．m以下。若為1×10-2Ω．m以下，則導電性較佳，可應對小型、高密度安裝。
於175℃下加熱5小時後之測定溫度25℃下之導熱率越高則越佳，例如為0.5W/m．K以上。若為0.5W/m．K以上，則散熱性較佳，可應對小型、高密度安裝。另一方面，若未達0.5W/m．K，則散熱性較差，熱滯留，有導電性變差之虞。
膜狀接著劑含有熱塑性樹脂。作為熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或者氟樹脂等。該等熱塑性樹脂中，特別較佳為離子性雜質較少、耐熱性較高、能夠確保半導體元件之可靠性之丙烯酸系樹脂。
作為丙烯酸系樹脂，並無特別限定，可列舉以一種或兩種以上之具有碳數30以下、特別是碳數4~18之直鏈或支鏈烷基之丙烯酸酯或甲基丙烯酸酯作為成分之聚合物(丙烯酸系共聚物)等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
另外，作為形成聚合物(丙烯酸系共聚物)之其他單體，並無特別 限定，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸或丁烯酸等各種含羧基單體；馬來酸酐或衣康酸酐等各種酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或(4-羥基甲基環己基)-甲基丙烯酸酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等各種含磺酸基單體；或者2-羥基乙基丙烯醯基磷酸酯等各種含磷酸基單體。
丙烯酸系樹脂之中，較佳為重量平均分子量為10萬以上者，更佳30萬~300萬者，進而較佳為50萬~200萬者。其原因在於，若在上述數值範圍內，則接著性及耐熱性優異。再者，重量平均分子量為利用GPC(凝膠滲透層析法)進行測定，並藉由聚苯乙烯換算而計算出之值。
熱塑性樹脂之玻璃轉移溫度較佳為-40℃以上，更佳為-35℃以上，進而較佳為-25℃以上。若未達-40℃，則膜狀接著劑變得過黏，有過度黏附於切晶帶從而拾取性變差之傾向。另外，熱塑性樹脂之玻璃轉移溫度較佳為-10℃以下，更佳為-11℃以下。若超過-10℃，則彈性模數提高，有難以於40℃左右之低溫下將膜狀接著劑貼附於半導體晶圓(低溫貼附性下降)之傾向。
於本說明書中，熱塑性樹脂之玻璃轉移溫度係指利用Fox公式求出之理論值。
另外，作為求出玻璃轉移溫度之其他方法，亦存在如下方法：由利用示差掃描熱量計(DSC)測定之最大熱吸收峰時之溫度求出熱塑性樹脂之玻璃轉移溫度。具體而言，使用示差掃描熱量計(TA Instruments公司製造之「Q-2000」)，於較預測之試樣之玻璃轉移溫度(預測溫度)高約50℃之溫度下將測定的試樣加熱10分鐘，然後冷卻至較預測溫度低50℃之溫度進行預處理，然後，於氮氣氛圍下，以5℃/分鐘之升溫速度升溫並測定吸熱起始點溫度，將其作為玻璃轉移溫度。
膜狀接著劑較佳為含有熱硬化性樹脂等硬化性樹脂。藉此，可提高熱穩定性。
作為硬化性樹脂，可列舉：苯酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、矽酮樹脂、或熱硬化性聚醯亞胺樹脂等。特別較佳為腐蝕半導體元件之離子性雜質等之含量較少之環氧樹脂。另外，作為環氧樹脂之硬化劑，較佳為苯酚樹脂。
作為環氧樹脂並無特別限定，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛型、鄰甲酚酚醛型、三羥苯基甲烷型、四羥苯基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、異氰脲酸三縮水甘油酯型或縮水甘油胺型等環氧樹脂。該等環氧樹脂中，特別較佳為酚醛型環氧樹脂、聯苯型環氧樹脂、三羥苯基甲烷型環氧樹脂或四羥苯基乙烷型環氧樹脂。其原因在於，該等環氧樹脂富於與作為硬化劑之苯酚樹脂之反應性，並且耐熱性等優異。
苯酚樹脂作為環氧樹脂之硬化劑起作用，例如可列舉：苯酚酚醛樹脂、苯酚芳烷基樹脂、甲酚酚醛樹脂、第三丁基苯酚酚醛樹脂、壬基苯酚酚醛樹脂等酚醛型苯酚樹脂、甲酚型苯酚樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。該等苯酚樹脂中特別較佳為苯酚酚醛樹脂、苯酚芳烷基樹脂。其原因在於可提高半導體裝置之連接可靠性。
環氧樹脂與苯酚樹脂之調配比例，較佳為例如以環氧樹脂成分中之環氧基每1當量，苯酚樹脂中之羥基為0.5~2.0當量之方式進行調 配。更佳為0.8~1.2當量。即，其原因在於，若兩者之調配比例在上述範圍以外，則硬化反應未充分進行，硬化物之特性容易變差。
膜狀接著劑較佳為含有於25℃下為固形之硬化性樹脂及於25℃下為液狀之硬化性樹脂。藉此，可獲得良好之低溫貼附性。
於本說明書中，於25℃下為液狀係指於25℃下黏度未達5000Pa．s。另一方面，於25℃下為固形係指於25℃下黏度為5000Pa．s以上。
再者，黏度可使用Thermo Scientific公司製造之型號HAAKE Roto VISCO1進行測定。
膜狀接著劑中，於25℃下為固形之硬化性樹脂之重量/於25℃下為液狀之硬化性樹脂之重量較佳為49/51~10/90，更佳為45/55~40/60。
若於25℃下為固形之硬化性樹脂之比率大於49/51，則有難以於40℃左右之低溫下將膜狀接著劑貼附於半導體晶圓(低溫貼附性下降)之傾向。另一方面，若於25℃下為固形之硬化性樹脂之比率未達10/90，則膜狀接著劑變得過黏，有過度黏附於切晶帶從而拾取性變差之傾向。
膜狀接著劑中之熱塑性樹脂及硬化性樹脂之合計含量較佳為5重量%以上，更佳為10重量%以上。若為5重量%以上，則容易保持作為膜之形狀。另外，熱塑性樹脂及硬化性樹脂之合計含量較佳為70重量%以下，更佳為60重量%以下。若為70重量%以下，則導電性粒子可適當地表現出導電性。
膜狀接著劑中，熱塑性樹脂之重量/硬化性樹脂之重量較佳為50/50~10/90，更佳為40/60~15/85。若熱塑性樹脂之比率大於50/50，則有熱穩定性變差之傾向。另一方面，若熱塑性樹脂之比率未達10/90，則有不易膜化之傾向。
膜狀接著劑含有導電性粒子。作為導電性粒子，並無特別限 定，可列舉：鎳粒子、銅粒子、銀粒子、金粒子、鋁粒子、碳黑粒子、作為纖維狀粒子之碳奈米管、以導電性材料包覆核粒子之表面而成之粒子等。
核粒子可為導電性、非導電性中之任一者，例如可使用玻璃粒子等。作為包覆核粒子之表面之導電性材料，可使用鎳、銅、銀、金、鋁等金屬。
導電性粒子之形狀並無特別限定，例如可使用薄片狀、針狀、絲狀、球狀、鱗片狀之形狀等。其中，就分散性、填充率之提高之方面而言，較佳為薄片狀。
導電性粒子之平均粒徑並無特別限定，相對於膜狀接著劑之厚度較佳為0.001倍以上(膜狀接著劑之厚度×0.001以上)，更佳為0.1倍以上。若未達0.001倍，則難以形成導電通道，有導電性不穩定之傾向。另外，導電性粒子之平均粒徑相對於膜狀接著劑之厚度較佳為1倍以下(膜狀接著劑之厚度以下)，更佳為0.8倍以下。若超過1倍，則有引起晶片破裂之危險性。
再者，導電性粒子之平均粒徑為利用光度式粒度分佈計(HORIBA製造，裝置名；LA-910)求出之值。
導電性粒子之比重較佳為0.7以上，更佳為1以上。若未達0.7，則導電性粒子於製作接著劑組合物溶液(清漆)時浮起，有導電性粒子之分散變得不均勻之虞。另外，導電性粒子之比重較佳為22以下，更佳為21以下。若超過22，則導電性粒子容易沈降，有導電性粒子之分散變得不均勻之虞。
膜狀接著劑中之導電性粒子之含量較佳為30重量%以上，更佳為40重量%以上。若未達30重量%，則有難以形成導電通道之傾向。另外，導電性粒子之含量較佳為95重量%以下，更佳為94重量%以下。若超過95重量%，則有不易膜化之傾向。另外，有對晶圓之密著力下 降之傾向。
膜狀接著劑除上述成分以外亦可適當含有膜製造中通常使用之調配劑例如交聯劑等。
本發明之膜狀接著劑可利用通常之方法進行製造。例如，製作含有上述各成分之接著劑組合物溶液，於基材隔離件上以達到特定厚度之方式塗佈接著劑組合物溶液而形成塗佈膜後，使該塗佈膜乾燥，藉此可製造膜狀接著劑。
作為接著劑組合物溶液中使用之溶劑，並無特別限定，較佳為可使上述各成分均勻地溶解、混練或分散之有機溶劑。例如可列舉二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、甲基乙基酮、環己酮等酮系溶劑、甲苯、二甲苯等。塗佈方法並無特別限定。作為溶劑塗敷之方法，例如可列舉模具塗佈機、凹版塗佈機、輥塗機、反轉塗佈機、缺角輪塗佈機、管刮刀塗佈機、網版印刷等。其中，就塗佈厚度之均勻性較高之方面而言，較佳為模具塗佈機。
作為基材隔離件，可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或者利用氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表面塗佈之塑膠膜或紙等。作為接著劑組合物溶液之塗佈方法，例如可列舉：輥塗敷、網版塗敷、凹版塗敷等。另外，塗佈膜之乾燥條件並無特別限定，例如可於乾燥溫度70℃~160℃、乾燥時間1分鐘~5分鐘之條件下進行。
作為本發明之膜狀接著劑之製造方法，例如亦較佳為如下之方法等：將上述各成分利用混合機加以混合，將所獲得之混合物壓製成形來製造膜狀接著劑。作為混合機，可列舉行星式混合機等。
膜狀接著劑之厚度並無特別限定，較佳為5μm以上，更佳為15μm以上。若未達5μm，則有產生未與出現翹曲之半導體晶圓或半導體晶片接著的部位，從而接著面積變得不穩定之情形。另外，膜狀接 著劑之厚度較佳為100μm以下，更佳為50μm以下。若超過100μm，則有膜狀接著劑由於固晶之荷重而過度溢出，從而污染焊墊之情形。
本發明之膜狀接著劑可較佳用於半導體裝置之製造。其中，特別較佳用作將引線架等被接著體與半導體晶片接著之(進行固晶之)固晶膜。作為被接著體，可列舉：引線架、中介層、半導體晶片等。其中，較佳為引線架。
本發明之膜狀接著劑較佳為與切晶帶一體地使用。即，較佳為以附膜狀接著劑之切晶帶之形態使用。若以該形態使用，則可對貼附於附膜狀接著劑之切晶帶之狀態之半導體晶圓進行操作，因此可減少對半導體晶圓單體進行操作之機會，操作性良好。因此，即便為近年來之薄型之半導體晶圓，亦可良好地進行操作。另外，於以該形態進行使用之情形時，將半導體晶圓貼附於膜狀接著劑，由於使用上述之膜狀接著劑，因此可抑制半導體晶圓之翹曲。
[附膜狀接著劑之切晶帶]
以下，對本發明之附膜狀接著劑之切晶帶進行說明。圖1係本發明之一實施形態之附膜狀接著劑之切晶帶的剖面示意圖。圖2係本發明之另一實施形態之附膜狀接著劑之切晶帶的剖面示意圖。
如圖1所示，附膜狀接著劑之切晶帶10具有於切晶帶11上積層有膜狀接著劑3之構成。切晶帶11係於基材1上積層黏著劑層2而構成，膜狀接著劑3設置於該黏著劑層2上。另外，本發明如圖2所示之附膜狀接著劑之切晶帶12般，亦可為僅於工件(半導體晶圓等)貼附部分形成有膜狀接著劑3'之構成。
基材1成為附膜狀接著劑之切晶帶10、12之強度母體，較佳為具有紫外線透射性。作為基材1，例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯 烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯基硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、矽酮樹脂、金屬(箔)、紙等。
為了提高與鄰接之層之密著性、保持性等，基材1之表面可實施慣用之表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學或物理處理、利用底塗劑(例如，下述之黏著物質)之塗佈處理。
基材1之厚度並無特別限制，可適當決定，通常為5μm~200μm左右。
作為黏著劑層2之形成中使用之黏著劑並無特別限制，例如，可使用丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性接著劑。作為感壓性接著劑，就避免半導體晶圓或玻璃等污染之電子部件之利用超純水或醇等有機溶劑之清潔洗淨性等方面而言，較佳為以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑。
作為丙烯酸系聚合物，例如可列舉使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數1~30、特別是碳數4~18之直鏈狀或支鏈狀之烷基酯等)以及(甲基)丙烯酸環烷基酯(例如，環戊酯、環己酯等)中之一種或兩種以上作為單體成分之丙烯酸系聚合物等。再者，(甲基)丙烯酸酯係指丙烯酸酯及/或甲基 丙烯酸酯，本發明之(甲基)全部為同樣之意義。
為了改善凝聚力、耐熱性等，丙烯酸系聚合物可視需要而含有對應於能夠與上述(甲基)丙烯酸烷基酯或環烷基酯共聚之其他單體成分之單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、馬來酸、富馬酸、丁烯酸等含羧基單體；馬來酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、甲基丙烯酸(4-羥基甲基環己基)甲酯等含羥基單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基單體；2-羥基乙基丙烯醯基磷酸酯等含磷酸基單體；丙烯醯胺；丙烯腈等。該等可共聚單體成分可使用一種或兩種以上。該等可共聚單體之使用量較佳為全部單體成分之40重量%以下。
進而，為了進行交聯，丙烯酸系聚合物亦可視需要含有多官能性單體等作為共聚用單體成分。作為此種多官能性單體，例如可列舉己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。該等多官能性單體亦可使用一種或兩種以上。就黏著特性等方面而言，多官能性單體之使用量較佳為全部單體成分之30重量%以下。
上述丙烯酸系聚合物可藉由將單一單體或者兩種以上之單體混合物聚合而獲得。聚合亦可藉由溶液聚合、乳化聚合、塊狀聚合、懸 浮聚合等任意方式進行。就防止污染潔淨之被接著體等方面而言，較佳為低分子量物質之含量較小。就該方面而言，丙烯酸系聚合物之數量平均分子量較佳為30萬以上，進而較佳為40萬~300萬左右。
另外，為了提高作為基礎聚合物之丙烯酸系聚合物等之數量平均分子量，上述黏著劑中亦可適當使用外部交聯劑。作為外部交聯方法之具體方法，可列舉：添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂之交聯劑進行反應之方法。於使用外部交聯劑之情形時，其使用量可根據與應交聯之基礎聚合物之平衡、進而作為黏著劑之使用用途來適當決定。通常而言，相對於上述基礎聚合物100重量份，較佳為調配5重量份左右以下，進而較佳為調配0.1重量份~5重量份。另外，視需要，除上述成分以外，於黏著劑中亦可使用先前公知之各種增黏劑、抗老化劑等添加劑。
黏著劑層2可利用放射線硬化型黏著劑形成。放射線硬化型黏著劑可藉由照射紫外線等放射線使交聯度增大，從而易於使其黏著力下降。
藉由僅對圖1所示之黏著劑層2之對應於工件貼附部分之部分2a照射放射線，可設置與其他部分2b之黏著力之差。於該情形時，利用未硬化之放射線硬化型黏著劑而形成之上述部分2b與膜狀接著劑3黏著，可確保切割時之保持力。
另外，藉由根據圖2所示之膜狀接著劑3'使放射線硬化型之黏著劑層2硬化，可形成黏著力顯著下降之上述部分2a。於該情形時，可將晶圓環固定於利用未硬化之放射線硬化型黏著劑而形成之上述部分2b。
即，利用放射線硬化型黏著劑形成黏著劑層2之情形時，較佳為對上述部分2a進行放射線照射，使黏著劑層2中上述部分2a之黏著力<其他部分2b之黏著力。
放射線硬化型黏著劑可無特別限制地使用具有碳-碳雙鍵等放射線硬化性官能基並且顯示出黏著性之黏著劑。作為放射線硬化型黏著劑，例如可例示：於上述丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑中調配有放射線硬化性之單體成分或低聚物成分之添加型之放射線硬化型黏著劑。
作為所調配之放射線硬化性之單體成分，例如可列舉：胺基甲酸酯低聚物、胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外，放射線硬化性之低聚物成分可列舉胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，其分子量在100~30000左右之範圍內較為適當。放射線硬化性之單體成分或低聚物成分之調配量，可根據上述黏著劑層之種類來適當決定能夠使黏著劑層之黏著力下降之量。通常而言，相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為5重量份~500重量份，較佳為40重量份~150重量份左右。
另外，作為放射線硬化型黏著劑，除上述說明之添加型之放射線硬化型黏著劑以外，亦可列舉：使用於聚合物側鏈或者主鏈中或主鏈末端具有碳-碳雙鍵者作為基礎聚合物之內在型之放射線硬化型黏著劑。關於內在型之放射線硬化型黏著劑，其無需含有或者不大量含有作為低分子成分之低聚物成分等，因此低聚物成分等不會經時地於黏著劑中移動，從而可形成穩定之層結構之黏著劑層，因此較佳。
上述具有碳-碳雙鍵之基礎聚合物可無特別限制地使用具有碳-碳雙鍵並且具有黏著性之基礎聚合物。作為此種基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架之聚合物。作為丙烯酸系聚合物之基本 骨架，可列舉上述例示之丙烯酸系聚合物。
於上述丙烯酸系聚合物中導入碳-碳雙鍵之方法並無特別限制，可採用各種方法，但於聚合物側鏈導入碳-碳雙鍵使分子設計比較容易。例如可列舉下述方法：預先使具有官能基之單體與丙烯酸系聚合物共聚後，使具有能夠與該官能基反應之官能基、及碳-碳雙鍵之化合物，在保持碳-碳雙鍵之放射線硬化性之狀態下進行縮合或加成反應。
作為該等官能基之組合例，可列舉：羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。該等官能基之組合中，就反應追蹤的容易性之方面而言，較佳為羥基與異氰酸酯基之組合。另外，只要為藉由該等官能基之組合而生成上述具有碳-碳雙鍵之丙烯酸系聚合物之組合，則官能基可在丙烯酸系聚合物與上述化合物中之任意一側，就上述較佳之組合而言，較佳為丙烯酸系聚合物具有羥基、上述化合物具有異氰酸酯基之情形。該情形時，作為具有碳-碳雙鍵之異氰酸酯化合物，例如可列舉甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。另外，作為丙烯酸系聚合物，可使用將上述例示之含羥基單體、或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等共聚而獲得之丙烯酸系聚合物。
上述內在型之放射線硬化型黏著劑，可單獨使用上述具有碳-碳雙鍵之基礎聚合物(特別是丙烯酸系聚合物)，亦可於不使特性變差之程度下調配上述放射線硬化性之單體成分或低聚物成分。放射線硬化性之低聚物成分等通常相對於基礎聚合物100重量份在30重量份之範圍內，較佳為0重量份~10重量份之範圍。
上述放射線硬化型黏著劑中，於藉由紫外線等而硬化之情形時含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧 基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、茴香偶姻甲醚等安息香醚系化合物；苄基二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯酮-1,1-丙二酮-2-(鄰乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌；鹵化酮；醯基氧化膦；醯基膦酸酯等。相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，光聚合起始劑之調配量例如為0.05重量份~20重量份左右。
另外，作為放射線硬化型黏著劑，例如可列舉日本專利特開昭60-196956號公報中揭示之橡膠系黏著劑、丙烯酸系黏著劑等，上述橡膠系黏著劑、丙烯酸系黏著劑等包含：具有兩個以上不飽和鍵之加成聚合性化合物、具有環氧基之烷氧基矽烷等光聚合性化合物；及羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合起始劑。
上述放射線硬化型之黏著劑層2中，亦可視需要含有藉由放射線照射而著色之化合物。藉由於黏著劑層2中含有藉由放射線照射而著色之化合物，可僅使被放射線照射後之部分著色。藉由放射線照射而著色之化合物係於放射線照射前為無色或淺色，但藉由紫外線照射而變為有色之化合物，例如可列舉隱色染料。藉由放射線照射而著色之化合物之使用比例可適當設定。
黏著劑層2之厚度並無特別限定，就防止晶片切割面之缺損或接 著層之固定保持之兼具性等方面而言，較佳為1μm~50μm左右。更佳為2μm~30μm，進而較佳5μm~25μm。
附膜狀接著劑之切晶帶10、12之膜狀接著劑3、3'較佳為利用間隔件來保護(未圖示)。間隔件具有作為在供於實際應用之前保護膜狀接著劑3、3'之保護材料之功能。當向附膜狀接著劑之切晶帶之膜狀接著劑3、3'上貼附工件時，將間隔件剝離。作為間隔件，亦可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或者利用氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表面塗佈後之塑膠薄膜或紙等。
附膜狀接著劑之切晶帶10、12可利用通常之方法進行製造。例如，藉由將切晶帶11之黏著劑層2與膜狀接著劑3、3'貼合，可製造附膜狀接著劑之切晶帶10、12。
於剝離溫度為25℃、剝離速度為300mm/min之條件下，自切晶帶11剝離膜狀接著劑3、3'時之剝離力較佳為0.01~3.00N/20mm。若未達0.01N/20mm，則有於切割時產生晶片飛散之虞。另一方面，若超過3.00N/20mm，則有不易拾取之傾向。
該剝離力可利用實施例中記載之方法進行測定。
[半導體裝置之製造方法]
本發明之半導體裝置之製造方法包括使用膜狀接著劑將半導體晶片固晶於被接著體之步驟。
以下，對於本發明之半導體裝置之製造方法，參照圖3，以使用附膜狀接著劑之切晶帶10來製造半導體裝置情況為例進行說明。圖3為用以說明本發明之半導體裝置之一製造方法之圖。
首先，將半導體晶圓4壓接於附膜狀接著劑之切晶帶10中之膜狀接著劑3之半導體晶圓貼附部分3a上，並將其接著保持而固定(貼附步驟)。一面利用壓接輥等按壓機構進行按壓，一面進行本步驟。此 時，可於40℃左右之低溫下進行壓接。具體而言，壓接溫度(貼附溫度)較佳為35℃以上，更佳為37℃以上。壓接溫度之上限較低則較佳，較佳為50℃以下，更佳為45℃以下，進而較佳為43℃以下。由於可於40℃左右之低溫下貼附於半導體晶圓4，因此可防止對半導體晶圓4之熱影響，可抑制半導體晶圓4之翹曲。
另外，壓力較佳為1×105~1×107Pa，更佳為2×105~8×106Pa。另外，作為貼附時間，較佳為1秒~5分鐘，更佳為1分鐘~3分鐘。
繼而，進行半導體晶圓4之切割。藉此，將半導體晶圓4切割為特定之尺寸而將其單片化，製造半導體晶片5。切割例如可按照常法自半導體晶圓4之電路面側進行。另外，於本步驟中，例如可採用切入至附膜狀接著劑之切晶帶10之稱為全切之切割方式等。作為本步驟中使用之切割裝置，並無特別限定，可使用先前公知之裝置。另外，半導體晶圓4利用附膜狀接著劑之切晶帶10進行接著固定，因此可抑制晶片缺損或晶片飛散，並且亦可抑制半導體晶圓4之破損。
為了將接著固定於附膜狀接著劑之切晶帶10之半導體晶片5剝離，進行半導體晶片5之拾取。作為拾取之方法並無特別限制，可使用先前公知之各種方法。例如可列舉：利用針自附膜狀接著劑之切晶帶10側將各個半導體晶片5向上推，利用拾取裝置拾取被上推之半導體晶片5之方法等。
此處，於黏著劑層2為紫外線硬化型之情形時，於對該黏著劑層2照射紫外線後進行拾取。藉此，黏著劑層2對膜狀接著劑3之黏著力下降，半導體晶片5之剝離變得容易。其結果，能夠無損半導體晶片5而進行拾取。照射紫外線時之照射強度、照射時間等條件並無特別限定，可根據需要適當設定。
拾取之半導體晶片5經由膜狀接著劑3接著固定(固晶)於被接著體6。
固晶溫度較佳為80℃以上，更佳為90℃以上。另外，固晶溫度較佳為150℃以下，更佳為130℃以下。藉由設定為150℃以下從而可防止固晶後之翹曲之產生。
繼而，藉由對膜狀接著劑3進行加熱處理，使半導體晶片5與被接著體6接著。
加熱處理之溫度較佳為80℃以上，更佳為170℃以上。加熱處理之溫度較佳為200℃以下，更佳為180℃以下。若加熱處理之溫度為上述範圍，則可良好地進行接著。另外，加熱處理之時間可適當設定。
繼而，進行利用焊線7將被接著體6之端子部(內部引線)之前端與半導體晶片5上之電極焊墊(未圖示)電連接之焊線接合步驟。作為上述焊線7，例如可使用金線、鋁線或銅線等。進行焊線接合時之溫度較佳為80℃以上，更佳為120℃以上，該溫度較佳為250℃以下，更佳為175℃以下。另外，其加熱時間進行幾秒~幾分鐘(例如1秒~1分鐘)。接線於加熱達至上述溫度範圍之狀態下，藉由併用超音波所產生之振動能與加壓所產生之壓接能來進行。
繼而，進行利用密封樹脂8將半導體晶片5密封之密封步驟。本步驟係為了保護搭載於被接著體6之半導體晶片5或焊線7而進行。本步驟係藉由利用模具將密封用樹脂成型來進行。作為密封樹脂8，例如使用環氧系樹脂。樹脂密封時之加熱溫度較佳為165℃以上，更佳為170℃以上，該加熱溫度較佳為185℃以下，更佳為180℃以下。
可視需要對密封物進而進行加熱(後硬化步驟)。藉此，可將密封步驟中硬化不充分之密封樹脂8完全硬化。加熱溫度可適當設定。
如上所述，於使用附膜狀接著劑之切晶帶之情形時，可藉由包括以下步驟之方法來製造半導體裝置：將附膜狀接著劑之切晶帶之膜狀接著劑與半導體晶圓貼合之步驟(I)；切割半導體晶圓而形成半導體晶片之步驟(II)；將由步驟(II)形成之半導體晶片與膜狀接著劑一起拾 取之步驟(III)；及將由步驟(III)拾取之半導體晶片經由膜狀接著劑固晶於被接著體之步驟(IV)。
實施例
以下，使用實施例對本發明進行詳細說明，但本發明只要不超出其主旨則不限定於以下之實施例。另外，各例中，若無特別說明，則份均為重量基準。
對實施例中使用之成分進行說明。
ARONTACK S-2060：東亞合成(股)製造之ARONTACK S-2060(丙烯酸系共聚物、Mw：55萬、玻璃轉移溫度：-22℃)
Teisan Resin SG-70L：Nagase ChemteX(股)製造之Teisan Resin SG-70L(丙烯酸系共聚物、Mw：90萬、玻璃轉移溫度：-13℃)
Teisan Resin SG-P3：Nagase ChemteX(股)製造之Teisan Resin SG-P3(丙烯酸系共聚物、Mw：85萬、玻璃轉移溫度：12℃)
EOCN-1020-4：日本化藥(股)製造之EOCN-1020-4(於25℃下為固形之環氧樹脂)
JER828：三菱化學(股)製造之JER828(於25℃下為液狀之環氧樹脂)
MEH-7851SS：明和化成公司製造之MEH-7851SS(苯酚芳烷基樹脂)
1400YM：三井金屬礦業(股)製造之1400YM(銅粉、平均粒徑4μm、比重8.9)
ES-6000：Potters Ballotini(股)製造之ES-6000(銀玻璃珠粒、平均粒徑6μm、比重3.9~4.0)
AUP-1000：大崎工業(股)製造之AUP-1000(金粉末、平均粒徑1μm、比重19.3)
[膜狀接著劑及附膜狀接著劑之切晶帶之製作] (實施例1~3及比較例1~3)
按照表1記載之調配比，將表1中記載之各成分及溶劑(甲基乙基酮)投入至混合攪拌機(KEYENCE製造HM-500)之攪拌釜，以攪拌模式，攪拌、混合3分鐘。將所獲得之清漆利用模具塗佈機塗佈於脫模處理膜(三菱樹脂(股)製造之MRA50)後，使其乾燥，製作膜狀接著劑。
將所獲得之膜狀接著劑切出為直徑230mm之圓形，於25℃下貼附於切晶帶(日東電工(股)製造之P2130G)之黏著劑層上，製作附膜狀接著劑之切晶帶。
(實施例4~6及比較例4~6)
按照表2中記載之調配比，將表2中記載之各成分投入至行星式混合機(PRIMIX(股)製造之T.K.HIVIS MIX“P-03”)之攪拌釜，於90℃下，攪拌、混合20分鐘。利用成形壓製機(北川精機(股)VH1-1572)，以120℃、壓力1kg/cm2對所獲得之混合物進行加壓，製作膜狀接著劑。
將所獲得之膜狀接著劑切出為直徑230mm之圓形，於25℃下貼附於切晶帶(日東電工(股)製造之P2130G)之黏著劑層上，製作附膜狀接著劑之切晶帶。
[鏡面矽晶圓之製作]
使用背面研磨機(DISCO(股)製造之DFG-8560)，進行研磨以使矽晶圓(信越化學工業(股)製造，厚度0.6mm)之厚度達到0.05mm，製作鏡面矽晶圓。
[評價]
使用所獲得之膜狀接著劑、附膜狀接著劑之切晶帶、鏡面矽晶圓進行以下之評價。結果示於表1及表2。
[低溫貼附性評價(1)]
使用晶圓貼片機(日東精機(股)製造之MA-3000III)，以10mm/min之貼附速度、40℃之貼附溫度將鏡面矽晶圓貼合於附膜狀接著劑之切晶帶之膜狀接著劑上。
將藉由貼合獲得者以鏡面矽晶圓為下側(地面側)之方式進行配置，將鏡面矽晶圓即便一部分自膜狀接著劑脫落之情形判定為×，將無脫落之情況判定為○。
[低溫貼附性評價(2)]
以保持目的將聚酯黏著帶(日東電工(股)製造之BT-315)貼合於附膜狀接著劑之切晶帶之膜狀接著劑上後，以10mm寬度進行切割。繼而，自聚酯黏著帶上將包含膜狀接著劑及切晶帶之積層體進行分離。使用2kg輥將40℃之鏡面矽晶圓貼附於積層體之膜狀接著劑面後，於40℃下放置2分鐘。然後，於常溫(25℃)下放置20分鐘，獲得樣品。
使用拉伸試驗機(島津製作所(股)製造之AGS-J)，於剝離角度180度、剝離溫度25℃、剝離速度300mm/min下對樣品進行剝離試驗(鏡面矽晶圓與膜狀接著劑間之剝離試驗)。
[接著性評價]
使用晶圓貼片機(日東精機(股)製之MA-3000III)，以10mm/min之貼附速度、40℃之貼附溫度將鏡面矽晶圓貼合於附膜狀接著劑之切晶帶之膜狀接著劑上。
使用切片機(DISCO(股)製造之DFD-6361)，將藉由貼合獲得者切割(單片化)為10mm×10mm見方，獲得單片。使用黏晶機(新川(股)製造之SPA-300)，以120℃、0.1MPa、1秒將單片(包含晶片及膜狀接著劑之單片)固晶於引線架。固晶後利用掃描型電子顯微鏡觀察單片之側面，若單片與引線架之間無空隙，則判定為「無」，若有空隙則判定為「有」。
[溢出評價]
使用晶圓貼片機(日東精機(股)製造之MA-3000III)，以10mm/min之貼附速度、40℃之貼附溫度將鏡面矽晶圓貼合於附膜狀接著劑之切晶帶之膜狀接著劑上。
使用切割機(DISCO(股)製造之DFD-6361)將藉由貼合獲得者切割(單片化)為10mm×10mm見方，獲得單片。使用黏晶機(新川(股)製造之SPA-300)，以120℃、0.4MPa、1秒將單片(包含晶片及膜狀接著劑之單片)固晶於引線架。固晶後利用光學顯微鏡自上表面觀察單片，測定膜狀接著劑自晶片之端面溢出之距離(溢出距離)。
[25℃之儲存彈性模數評價]
將膜狀接著劑自附膜狀接著劑之切晶帶分離，將膜狀接著劑重疊直至厚度達到300μm，製作包含膜狀接著劑之積層體。自該積層體切出寬度10mm之短條狀樣品。
使用動態黏彈性測定裝置(Rheometric Scientific公司製造之RSAIII)，以夾盤間距20mm、升溫速度10℃/分鐘、拉伸測定模式於0~50℃下對該樣品進行測定，求出25℃時之儲存彈性模數。
[膜狀接著劑與切晶帶間之剝離力之測定]
以保持目的將聚酯黏著帶(日東電工(股)製造之BT-315)貼合於附膜狀接著劑之切晶帶之膜狀接著劑上後，以100mm×100mm寬度進行切割，製作樣品。對於該樣品，於300mm/min之剝離速度、25℃之剝離溫度下，利用T模片將膜狀接著劑自切晶帶剝離，測定剝離力。
[綜合判定]
將滿足以下之全部條件之情形判定為○，將任一者未滿足之情形判定為×。
條件(1)：低溫貼附性評價(1)之判定結果為○。
條件(2)：低溫貼附性評價(2)中測定之密著力為0.5N/10mm以上。
條件(3)：接著性評價之判定結果為「無」。
條件(4)：溢出評價中測定之溢出距離為100μm以下。
條件(5)：25℃之儲存彈性模數評價之測定結果為5MPa以上。
條件(6)：膜狀接著劑與切晶帶間之剝離力測定之測定結果為0.01~3.00N/20mm。
1‧‧‧基材
2‧‧‧黏著劑層
2a‧‧‧黏著劑層2之對應於工件貼附部分之部分
2b‧‧‧其他部分
3‧‧‧膜狀接著劑
3a‧‧‧膜狀接著劑3之半導體晶圓貼附部分
4‧‧‧半導體晶圓
10‧‧‧附膜狀接著劑之切晶帶
11‧‧‧切晶帶

Claims (11)

  1. 一種膜狀接著劑，其含有熱塑性樹脂及導電性粒子，於40℃下貼附於鏡面矽晶圓後，於25℃下測定之密著力為0.5N/10mm以上。
  2. 如請求項1之膜狀接著劑，其中上述熱塑性樹脂之玻璃轉移溫度為-40~-10℃。
  3. 如請求項1之膜狀接著劑，其含有硬化性樹脂。
  4. 如請求項3之膜狀接著劑，其中上述硬化性樹脂包含於25℃為固形之硬化性樹脂及於25℃下為液狀之硬化性樹脂，且於25℃下為固形之硬化性樹脂之重量/於25℃下為液狀之硬化性樹脂之重量所表示之重量比率為49/51~10/90。
  5. 如請求項1之膜狀接著劑，其厚度為5~100μm。
  6. 如請求項1之膜狀接著劑，其中於25℃下之儲存彈性模數為5MPa以上。
  7. 如請求項1之膜狀接著劑，其用作固晶膜。
  8. 一種附膜狀接著劑之切晶帶，其中於切晶帶上積層有如請求項1之膜狀接著劑。
  9. 如請求項8之附膜狀接著劑之切晶帶，其中於剝離溫度為25℃、剝離速度為300mm/min之條件下，自上述切晶帶剝離上述膜狀接著劑時之剝離力為0.01~3.00N/20mm。
  10. 一種半導體裝置之製造方法，其包括使用如請求項1之膜狀接著劑將半導體晶片固晶於被接著體之步驟。
  11. 一種半導體裝置，其係藉由如請求項10之製造方法而獲得。
TW103105325A 2013-02-20 2014-02-18 膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置 TWI615452B (zh)

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