TWI773672B - 加熱接合用片材及附切晶帶加熱接合用片材 - Google Patents
加熱接合用片材及附切晶帶加熱接合用片材 Download PDFInfo
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- TWI773672B TWI773672B TW106118152A TW106118152A TWI773672B TW I773672 B TWI773672 B TW I773672B TW 106118152 A TW106118152 A TW 106118152A TW 106118152 A TW106118152 A TW 106118152A TW I773672 B TWI773672 B TW I773672B
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- 238000010438 heat treatment Methods 0.000 claims abstract description 50
- 239000002923 metal particle Substances 0.000 claims abstract description 41
- 239000002243 precursor Substances 0.000 claims abstract description 38
- 230000008034 disappearance Effects 0.000 claims abstract description 20
- 238000005259 measurement Methods 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims description 49
- 239000000853 adhesive Substances 0.000 claims description 48
- 239000000126 substance Substances 0.000 claims description 31
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 claims description 5
- CLZGJKHEVKJLLS-UHFFFAOYSA-N n,n-diheptylheptan-1-amine Chemical compound CCCCCCCN(CCCCCCC)CCCCCCC CLZGJKHEVKJLLS-UHFFFAOYSA-N 0.000 claims description 2
- DIAIBWNEUYXDNL-UHFFFAOYSA-N n,n-dihexylhexan-1-amine Chemical group CCCCCCN(CCCCCC)CCCCCC DIAIBWNEUYXDNL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 69
- 238000005245 sintering Methods 0.000 abstract description 24
- 239000013078 crystal Substances 0.000 abstract description 14
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 238000005304 joining Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 60
- -1 etc.) Chemical group 0.000 description 55
- 235000012431 wafers Nutrition 0.000 description 50
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 34
- 239000000178 monomer Substances 0.000 description 31
- 238000000034 method Methods 0.000 description 29
- 239000012790 adhesive layer Substances 0.000 description 27
- 239000000463 material Substances 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 22
- 229920000058 polyacrylate Polymers 0.000 description 20
- 239000011347 resin Substances 0.000 description 19
- 229920005989 resin Polymers 0.000 description 19
- 238000000576 coating method Methods 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 18
- 239000010408 film Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000007789 sealing Methods 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000011230 binding agent Substances 0.000 description 12
- 239000010949 copper Substances 0.000 description 12
- 238000001035 drying Methods 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 11
- 229920000515 polycarbonate Polymers 0.000 description 11
- 239000004417 polycarbonate Substances 0.000 description 11
- 229920005601 base polymer Polymers 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000003825 pressing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004615 ingredient Substances 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- 229920000379 polypropylene carbonate Polymers 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000009864 tensile test Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 4
- 238000011282 treatment Methods 0.000 description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007334 copolymerization reaction Methods 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 2
- QENRKQYUEGJNNZ-UHFFFAOYSA-N 2-methyl-1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CC(C)C(S(O)(=O)=O)NC(=O)C=C QENRKQYUEGJNNZ-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical class [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical class [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 150000001491 aromatic compounds Chemical class 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 125000005587 carbonate group Chemical group 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000002985 plastic film Substances 0.000 description 2
- 229920006255 plastic film Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- 238000005510 radiation hardening Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 1
- 229940043375 1,5-pentanediol Drugs 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- IAUGBVWVWDTCJV-UHFFFAOYSA-N 1-(prop-2-enoylamino)propane-1-sulfonic acid Chemical compound CCC(S(O)(=O)=O)NC(=O)C=C IAUGBVWVWDTCJV-UHFFFAOYSA-N 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- RYYYTOGKTKBJDJ-UHFFFAOYSA-N 2-(3-benzylphenyl)propanoic acid Chemical compound OC(=O)C(C)C1=CC=CC(CC=2C=CC=CC=2)=C1 RYYYTOGKTKBJDJ-UHFFFAOYSA-N 0.000 description 1
- FGTYTUFKXYPTML-UHFFFAOYSA-N 2-benzoylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1C(=O)C1=CC=CC=C1 FGTYTUFKXYPTML-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- NPSJHQMIVNJLNN-UHFFFAOYSA-N 2-ethylhexyl 4-nitrobenzoate Chemical compound CCCCC(CC)COC(=O)C1=CC=C([N+]([O-])=O)C=C1 NPSJHQMIVNJLNN-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- JEHFRMABGJJCPF-UHFFFAOYSA-N 2-methylprop-2-enoyl isocyanate Chemical compound CC(=C)C(=O)N=C=O JEHFRMABGJJCPF-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- VSCBATMPTLKTOV-UHFFFAOYSA-N 2-tert-butylimino-n,n-diethyl-1,3-dimethyl-1,3,2$l^{5}-diazaphosphinan-2-amine Chemical compound CCN(CC)P1(=NC(C)(C)C)N(C)CCCN1C VSCBATMPTLKTOV-UHFFFAOYSA-N 0.000 description 1
- KWVIBDAKHDJCNY-UHFFFAOYSA-N 20alpha-atisine Natural products C12CCC3(C(C4=C)O)CCC4CC3C11CCCC2(C)CN2CCOC21 KWVIBDAKHDJCNY-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- UQFCFPLMDJGELA-UHFFFAOYSA-N 5-ethyl-1h-imidazole-2-carboxylic acid Chemical compound CCC1=CN=C(C(O)=O)N1 UQFCFPLMDJGELA-UHFFFAOYSA-N 0.000 description 1
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- ITLNHTGFQDGAFI-UHFFFAOYSA-N C1=CC=C(C(=C1)[N+](=O)[O-])OC(=O)N2C=CN=C2 Chemical compound C1=CC=C(C(=C1)[N+](=O)[O-])OC(=O)N2C=CN=C2 ITLNHTGFQDGAFI-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- DFXNRMAOEBEFFH-SOFGYWHQSA-N OC1=C(C=CC=C1)/C=C/CN1CCCCC1 Chemical compound OC1=C(C=CC=C1)/C=C/CN1CCCCC1 DFXNRMAOEBEFFH-SOFGYWHQSA-N 0.000 description 1
- NYXVMNRGBMOSIY-UHFFFAOYSA-N OCCC=CC(=O)OP(O)(O)=O Chemical compound OCCC=CC(=O)OP(O)(O)=O NYXVMNRGBMOSIY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 208000034189 Sclerosis Diseases 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical class [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- URLYGBGJPQYXBN-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methyl prop-2-enoate Chemical group OCC1CCC(COC(=O)C=C)CC1 URLYGBGJPQYXBN-UHFFFAOYSA-N 0.000 description 1
- CBSYYHLPCVVXJW-UHFFFAOYSA-N [O-][N+](=O)C1=CC=CC(OC(=O)N2C=NC=C2)=C1 Chemical compound [O-][N+](=O)C1=CC=CC(OC(=O)N2C=NC=C2)=C1 CBSYYHLPCVVXJW-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000005250 alkyl acrylate group Chemical group 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000012661 block copolymerization Methods 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- LSVHKHUJVNSPSF-UHFFFAOYSA-N calcium;2-methylpropan-2-ol Chemical compound [Ca].CC(C)(C)O LSVHKHUJVNSPSF-UHFFFAOYSA-N 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- GCFAUZGWPDYAJN-UHFFFAOYSA-N cyclohexyl 3-phenylprop-2-enoate Chemical compound C=1C=CC=CC=1C=CC(=O)OC1CCCCC1 GCFAUZGWPDYAJN-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OPECTNGATDYLSS-UHFFFAOYSA-N naphthalene-2-sulfonyl chloride Chemical compound C1=CC=CC2=CC(S(=O)(=O)Cl)=CC=C21 OPECTNGATDYLSS-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- WCVRQHFDJLLWFE-UHFFFAOYSA-N pentane-1,2-diol Chemical compound CCCC(O)CO WCVRQHFDJLLWFE-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical group CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- AAYRWMCIKCRHIN-UHFFFAOYSA-N propane-1-sulfonic acid;prop-2-enamide Chemical group NC(=O)C=C.CCCS(O)(=O)=O AAYRWMCIKCRHIN-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/08—Macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/35—Heat-activated
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/10—Presence of inorganic materials
- C09J2400/16—Metal
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2469/00—Presence of polycarbonate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
本發明提供一種加熱接合片材,及具有該加熱接合用片材之附切晶帶之加熱接合用片材,其係抑制因有機成分導致燒結性金屬粒子之燒結之阻礙並能賦予電力用半導體裝置充分的接合信賴性。該加熱接合用片材,其係具有藉由加熱形成燒結層之前驅層之加熱接合用片材,其特徵係:前述前驅層,係含有燒結性金屬粒子及有機成分;大氣環境下,在10℃/min之昇溫速度之條件進行前述加熱接合用片材之熱重量測量時之前述有機成分之95%重量消失溫度為150℃以上300℃以下。
Description
本發明係關於加熱接合用片材,以及附切晶帶之加熱接合用片材。
半導體裝置之製造中,將半導體元件接著在金屬導線架等被黏物之方法(所謂的晶片接合法),從過去的金-矽共晶開始,發展到藉由焊接、樹脂膏之方法。現今,有使用導電性之樹脂膏之方法。
然而,使用導電性之樹脂膏之方法有:由於空隙之產生而導電性降低及糊膏之厚度不均,由於溢出而污染墊子等情形發生。
另一方面,近年,進行電力控制或供給的電力用半導體裝置的普及變得顯著。電力用半導體裝置因電流隨時在流通,發熱量大。因此,使用在電力用半導體裝置的接著劑被期望具有高散熱性和低電阻。
電力用半導體裝置要求低損失之高速動作。過去,電力用半導體裝置使用IGBT(絕緣閘雙極電晶體,Insulated Gate Bipolar Transistor)或MOSFET(金氧半場效應電晶體,Metal-Oxide-Semiconductor Field-Effect Transistor)等的使用Si的半導體。近年,使用SiC或GaN等的半導體也被開發,可預想以後之擴大發展。
使用SiC或GaN的半導體,有能隙大、絕緣破壞電場高等特徵,可低損失、高速動作、且高溫動作。高溫動作,是在熱環境嚴苛的汽車或小型電力變換機等之優勢所在。用在熱環境嚴苛用途的半導體裝置,預計係在250℃左右的高溫作動,習知的接合‧接著材料之焊接或導電性接著劑上會有熱特性、信賴性的問題產生。因此,過去曾提案含有燒結金屬粒子的膏狀材料(例如參照專利文獻1)。含有燒結金屬粒子的膏狀材料裡,係含有奈米‧微米尺寸的金屬粒子,這些金屬粒子在奈米尺寸效果下會以比一般的熔點更低的溫度進行熔解,並進行粒子間的燒結。
【專利文獻1】日本特開2014-111800號公報
然而,含有燒結金屬粒子之膏狀材料,如同文字描述呈糊膏狀態,與導電性之樹脂膏相同,形成厚度不均,其結果,產生接合不均而有尤其在高溫之接合信賴性降低之情形。因此,為了解決厚度之不均一性及起因於此之故障,而檢討將含有燒結性之金屬粒子之接合材料片狀化之技術。
作為賦予接合材料成形性之方針之一,已檢討添加相對上高
分子量之材料之有機黏合劑。片材狀之接合材料之燒結,係有機黏合劑等有機成分之分解消失後接著燒結性金屬粒子之燒結的程序進行。
然而,若代表有機黏合劑之高分子材料與金屬微粒子共存,高分子材料之分解溫度會移轉至高溫側。若分解溫度之高溫移轉之程度變強,則高分子材料之分解溫度變為與燒結性金屬粒子之燒結溫度同程度,或者有超越其溫度之疑慮。此情形,即使燒結性金屬粒子燒結時,高分子材料未消失而殘存,未消失之高分子材料阻礙燒結性金屬粒子之燒結,其結果,燒結性金屬粒子之燒結不充分,而有導致電力用半導體裝置之接合信賴性降低的疑慮。
本發明有鑑於前述問題點,其目的在於提供一種加熱接合片材,及具有該加熱接合用片材之附切晶帶之加熱接合用片材,其係抑制因有機成分導致燒結性金屬粒子之燒結之阻礙並能賦予電力用半導體裝置充分的接合信賴性。
本案發明人等,深入檢討關於能解決前述傳統的問題點之結果,藉由採用下述之構成,能夠解決前述課題,從而完成本發明。
亦即,本發明之一實施型態之加熱接合用片材,其係具有藉由加熱形成燒結層之前驅層;前述前驅層,係含有燒結性金屬粒子及有機成分;大氣環境下,在10℃/min之昇溫速度之條件進行前述加熱接合用片材之熱重量測量時之前述有機成分之95%重量消失溫度為150℃
以上300℃以下。
該加熱接合用片材,在所規定之條件下加熱時之前驅層所含有之有機成分之95%重量消失溫度為150℃以上300℃以下。藉由有機成分具有與燒結性金屬粒子之燒結溫度相等,或較其低之95%重量消失溫度,從而燒結性金屬粒子之燒結前可使大部分的有機成分分解消失,可使燒結性金屬粒子之燒結順利地進行。
前述有機成分,係含有有機黏合劑及鹼性物質者為佳。藉由鹼性物質之存在可促進有機黏合劑之分解消失,可使燒結性金屬粒子更順利地燒結。
大氣環境下,在10℃/min之昇溫速度之條件進行熱重量測量時之前述鹼性物質之中之至少一種之鹼性物質之95%重量消失溫度為150℃以上300℃以下者為佳。由於鹼性物質具有與有機成分相等之95%重量消失溫度,可促進有機成分更有效率且充分的分解消失。又,前述加熱接合用片材所含有之前述鹼性物質例如可由如下辨別。首先藉由紅外線光譜分析法(IR)進行有機物之大致區分,在此基礎上以溶劑流出、離心分離等取出有機物,由核磁共振(NMR)或氣相色譜法、質量分析(GC-MS)等進行構造解析可特定分子構造。使用除此以外之習知的方法亦可特定鹼性物質。
前述鹼性物質,從具有有機成分之分解性及適度的95%重量消失溫度之觀點而言,其為三級胺為佳。
本發明之其他實施型態之附切晶帶之加熱接合用片材,其特徵係,其係具有切晶帶,及
積層於前述切晶帶上之該加熱接合用片材。
前述附切晶帶之加熱接合用片材中,因與切晶帶一體成形,故能省略與切晶帶貼合的步驟。此外,因具備該加熱接合用片材,燒結性金屬粒子之燒結可充分地進行,可得到良好的接合信賴性。
1‧‧‧基材
2‧‧‧黏著劑層
3、3’‧‧‧加熱接合用片材
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被黏物
7‧‧‧焊接導線
8‧‧‧密封樹脂
10、12‧‧‧附切晶帶之加熱接合用片材
11‧‧‧切晶帶
30‧‧‧附有兩面隔板之加熱接合用片材
31‧‧‧藉由加熱形成燒結層之前驅層
32‧‧‧第1隔板
34‧‧‧第2隔板
【圖1】表示本發明之一實施型態之附切晶帶之加熱接合用片材之斷面模式圖。
【圖2】表示本發明之其他實施型態之附切晶帶之加熱接合用片材之斷面模式圖。
【圖3】表示附兩面隔板之加熱接合用片材之斷面模式圖。
【圖4】用於說明本發明之一實施型態之半導體裝置之製造方法之斷面模式圖。
【圖5】表示實施例1之加熱接合用片材之熱重量測量之結果之圖表。
【圖6A】表示實施例2之加熱接合用片材之接合信賴性實驗之結果之超音波圖像。
【圖6B】表示比較例1之加熱接合用片材之接合信賴性實驗之結果之超音波圖像。
以下對於本發明之加熱接合用片材及附切晶帶之加熱接合
用片材之實施型態,參照圖面說明。然而,在圖之部分或全部,省略說明不必要的部分,或為了便於說明而擴大或縮小等圖式之部分。表示上下等之位置關係之用語,單純為了便於說明而使用,並無限定本發明構成之意圖。
(附切晶帶之加熱接合用片材)
本實施型態中的加熱接合用片材,可列舉如下述說明之附切晶帶之加熱接合用片材中,其係沒有貼合切晶帶的狀態。因此,以下說明附切晶帶之加熱接合用片材,並就加熱接合用片材在其中加以說明。圖1係表示本發明之一實施型態的附切晶帶之加熱接合用片材之斷面模式圖。圖2係表示本發明之其他實施型態的其他附切晶帶之加熱接合用片材之斷面模式圖。
如圖1所示,附切晶帶之加熱接合用片材10係具有在切晶帶11上積層加熱接合用片材3之構成。切晶帶11係在基材1上積層黏合劑層2所構成,而加熱接合用片材3設置於該黏合劑層2上。又,本發明之附切晶帶之加熱接合用片材,如圖2所示附切晶帶之加熱接合用片材12,亦可以僅在加工黏貼部分上形成加熱接合用片材3’之構成。
(加熱接合用片材)
加熱接合用片材3、3’係片材狀。因並非膏狀,而為片材狀,可得到良好厚度均一性及運用性。
本實施型態之加熱接合用片材3、3’,係藉由加熱形成燒結層之前驅層31所構成。本實施型態,說明加熱接合用片材為藉由加熱形成燒結層之前驅層包含1層之情形,但本發明並不限定於此例。本發明
中,藉由加熱形成燒結層之前驅層,亦可為複數積層該前驅層之構成。
此外,本實施型態,說明加熱接合用片材為藉由加熱形成燒結層之前驅層所構成之情形,但本發明並不限定於此例。本發明之加熱接合用片材亦可為2層以上。例如,藉由加熱形成燒結層之前驅層,及其他層(藉由加熱不形成燒結層之層)所積成之構成亦可。
亦即,本發明之加熱接合用片材,至少具有藉由加熱形成燒結層之前驅層即可,其他之構成並無特別限定。
(藉由加熱形成燒結層之前驅層)
藉由加熱形成燒結層之前驅層31(以下,亦稱作「前驅層31」),係包含燒結性金屬粒子及有機成分(各成分之詳細後述)。前驅層31,係大氣環境下,在10℃/min之昇溫速度之條件進行前述加熱接合用片材之熱重量測量時之前述有機成分之95%重量消失溫度為150℃以上300℃以下。前述95%重量消失溫度為200℃以上為佳,250℃以上較佳。另一方面,前述95%重量消失溫度為280℃以下為佳,290℃以下較佳。藉由使95%重量消失溫度在上述範圍內之溫度而加熱,則前驅層中之有機成分之重量之至少95%會消失。藉由有機成分具有與燒結性金屬粒子之燒結溫度相等,或較其低之95%重量消失溫度,從而燒結性金屬粒子之燒結前可使大部分的有機成分分解消失,可使燒結性金屬粒子之燒結順利地進行。若95%重量消失溫度過低,由於至加熱接合為止之熱負荷而有機成分發生不期望的分解消失,有無法得到所期望的片材特性之疑慮。此外,若95%重量消失溫度過高,則燒結性金屬粒子之燒結時亦存在有機成分,而阻礙燒結,降低接合信賴性。
前驅層31之平均厚度為5μm~200μm,較佳為10μm~150μm,更佳為15μm~100μm。藉由使加熱前之前驅層31之平均厚度為上述範圍,可確保片材形狀之維持及厚度均一性。
前驅層31,藉由下述拉伸試驗方法得到拉伸彈性率為10MPa~3000MPa為佳,12MPa~2900MPa為較佳,15MPa~2500MPa為更佳。
拉伸試驗方法:
(1)準備厚度200μm、寬10mm、長40mm的加熱接合用片材(拉伸試驗用加熱接合用片材),作為試驗材料,(2)在夾具間距離為10mm、拉伸速度為50mm/分、23℃的條件下進行拉伸試驗,(3)以所得的應力-應變曲線圖之直線部分之斜率作為拉伸彈性率。
若前驅層31之前述拉伸彈性率為10MPa以上,則更能抑制黏晶時加熱接合用片材之構成材料的溢出或覆蓋到晶片表面上。此外,若前述拉伸彈性率係3000MPa以下,則例如在切割時能固定半導體晶圓。
前驅層31,在大氣環境下,昇溫速度10℃/分之條件時,由進行從23℃昇溫到400℃後之能量分散型X射線分析所得之碳濃度為15重量%以下為佳,12重量%以下為較佳,10重量%以下更佳。若前述碳濃度為15重量%以下,前驅層31在進行昇溫到400℃後有機物幾乎不存在。其結果,加熱接合步驟後,耐熱性優良、在高溫環境亦可得到高信賴性、熱特性。
前驅層31,在大氣環境下,昇溫速度10℃/分之條件時,從23℃到500℃進行示差熱分析時之峰值存在於150~350℃者為佳,存在於170~320℃者為較佳,存在於180~310℃者為更佳。若前述峰值存在於150~350℃,有機物(例如,構成前驅層31之樹脂成分)在該溫度區域熱分解。其結果,加熱接合步驟後之耐熱性更優良。
(燒結性金屬粒子)
前述燒結性金屬粒子,適合使用金屬微粒子的凝集體。金屬微粒子可列舉由金屬所成之微粒子等。前述金屬可列舉為金、銀、銅、氧化銀、氧化銅等。其中,較佳係選自銀、銅、氧化銀、氧化銅所成群中至少一種。如前述金屬微粒子係選自銀、銅、氧化銀、氧化銅所成群中至少一種時,可更適合地進行加熱接合。
前述燒結性金屬粒子之平均粒徑較佳係0.0005μm以上,更佳係0.001μm以上。平均粒徑之下限,亦可例示為0.01μm、0.05μm、0.1μm。另一方面,燒結性金屬粒子之平均粒徑較佳係以30μm以下,更佳係25μm以下。平均粒徑之上限,亦可例示為20μm、15μm、10μm、5μm。
前述燒結性金屬粒子之平均粒徑由以下方法測量。亦即,前述燒結性金屬粒子用SEM(掃描式電子顯微鏡)觀察,測量平均粒徑。又,SEM觀察中,例如,燒結性金屬粒子為微米尺寸時,用5000倍觀察;亞微米尺寸時,用50000倍觀察;奈米尺寸時,用300000倍觀察為佳。
前述燒結性金屬粒子之形狀無特別限定,例如,球狀、棒狀、鱗片狀、不定形。
前驅層31,係相對於前驅層31全體而含有燒結性金屬粒子在60~98重量%的範圍內為佳。前述燒結性金屬粒子的含有量,在65~97重量%的範圍內為較佳,在70~95重量%的範圍內為更佳。若含有前述燒結性金屬粒子在60~98重量%的範圍內,則能燒結燒結性金屬微粒子,或使其熔融而接合兩個物(例如,半導體晶片及導線架)。
(有機成分)
前述有機成分,係含有有機黏合劑及鹼性物質者為佳。藉由鹼性物質之存在可促進有機黏合劑之分解消失,可使燒結性金屬粒子更順利地燒結。
前驅層31,係前述有機黏合劑,含有在23℃為固體之熱分解性黏合劑為佳。若含有前述熱分解性黏合劑,則加熱接合步驟前,容易維持片材形狀。此外,加熱接合步驟時容易熱分解。
本說明書中,「固體」係,具體而言藉由前述流變儀黏度測定在23℃之黏度為大於100,000Pa‧s。
本說明書中所謂「熱分解性黏合劑」,係指加熱接合步驟中可使其熱分解之黏合劑。前述熱分解性黏合劑,在加熱接合步驟後,幾乎不殘留在燒結層(加熱後之前驅層31)者為佳。前述熱分解性黏合劑,可列舉例如,即使含在前驅層31,大氣環境下,以昇溫速度10℃/分之條件,由進行從23℃昇溫到400℃後之能量分散型X射線分析所得之碳濃度為15重量%以下之材料。例如,作為熱分解性黏合劑,如採用更
容易熱分解之材料時,即使相對含有量較多,可在加熱接合步驟後,使其幾乎不殘留於燒結層(加熱後之前驅層31)。
前述熱分解性黏合劑,可列舉聚碳酸酯、丙烯酸樹脂、乙基纖維素、聚乙烯醇等。此等材料可單獨、或混合2種以上使用。其中,從高熱分解性之觀點而言,聚碳酸酯為佳。
前述聚碳酸酯,若為能在加熱接合步驟中使其熱分解者,並無特別限定,可列舉為主鏈的碳酸酯基(-O-CO-O-)間不含芳香族化合物(例如,苯環等)、由脂肪族鏈構成的脂肪族聚碳酸酯、或主鏈的碳酸酯基(-O-CO-O-)間含芳香族化合物的芳香族聚碳酸酯。其中,以脂肪族聚碳酸酯為佳。
前述脂肪族聚碳酸酯,可列舉例如聚乙烯碳酸酯、聚丙烯碳酸酯等。其中,以形成片材的塗漆製造中對有機溶劑的溶解性的觀點而言,以聚丙烯碳酸酯為佳。
前述芳香族聚碳酸酯,可列舉例如主鏈含雙酚A構造者等。
前述聚碳酸酯的重量平均分子量在10,000~1,000,000的範圍內較合適。又,重量平均分子量是藉由GPC(凝膠滲透層析儀)測量,由聚苯乙烯換算而得之數值。
前述丙烯酸樹脂,在加熱接合步驟可使其熱分解的範圍中,可列舉為碳數30以下,尤其具有碳數4~18的直鏈或者分枝的烷基的丙烯酸,或甲基丙烯酸的酯之1種或2種以上作為成分之聚合物(丙烯酸共聚物)等。前述烷基可列舉例如:甲基、乙基、丙基、異丙基、n-丁基、t-丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、
辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、十二烷基、十三烷基、十四烷基、硬脂基、十八烷基,或月桂基等。
此外,作為形成聚合物(丙烯酸共聚物)之其他單體,無特別限定,可列舉例如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、或巴豆酸等含有羧基的單體;馬來酸酐或衣康酸酐等酸酐單體;(甲基)丙烯酸2-羥乙基、(甲基)丙烯酸2-羥丙基、(甲基)丙烯酸4-羥丁基、(甲基)丙烯酸6-羥己基、(甲基)丙烯酸8-羥辛基、(甲基)丙烯酸10-羥癸基、(甲基)丙烯酸12-羥十二烷基或(4-羥甲基環己基)-丙烯酸甲酯等含有羥基的單體;苯乙烯磺酸、丙烯磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、丙磺酸(甲基)丙烯酸酯或(甲基)丙烯醯氧基萘磺酸等含有磺酸基之單體;或2-羥乙基丙烯醯基磷酸酯等含有磷酸基之單體。
丙烯酸樹脂之中,較佳係重量平均分子量為1萬~100萬者,更佳係3萬~70萬者。若在上述數值範圍內時,則加熱接合步驟前的接著性,以及加熱接合步驟時的熱分解性優良。又,重量平均分子量是藉由GPC(凝膠滲透層析儀)測量,由聚苯乙烯換算而得之數值。
此外,丙烯酸樹脂中,在200℃~400℃熱分解之丙烯酸樹脂為佳。
前述鹼性物質,並無特別限定,可列舉無機鹼及有機鹼。無機鹼,可列舉例如:氫氧化鈉、氫氧化鉀、氫氧化鈣等之金屬氫氧化物;氫化鋰、氫化鈉等之金屬氫化物;氧化鈉、氧化鉀、氧化鈣等之金屬氧化物;碳酸鈉、碳酸鈣、碳酸氫鈉、磷酸鈉等之金屬弱酸鹽;及氨等。有機
鹼,可列舉例如:二乙醇胺等之二級胺,三己胺、三庚基胺、三辛胺、三乙醇胺、1,8-二氮雜二環〔5.4.0〕十一碳-4-烯(DBU)、1,5-二氮雜二環〔4.3.0〕壬-5-烯(DBN)、等之三級胺;2-tert-丁基亞胺-2-二乙胺基-1,3-二甲基全氫-1,3-二氮雜-2-磷雜苯(BEMP)、tert-丁基亞胺-三(二甲基胺基)磷烷(tBu-P1)等之磷腈化合物;甲醇鈉、鈣tert-丁醇等之金屬鹽醇化合物等。
此外,亦可添加產生此等之鹼之物質作為鹼性物質,可列舉例如:光鹼產生劑或熱鹼產生劑。光鹼產生劑,可列舉例如:胍2-(3-苯甲醯苯基)丙酸酯、E-1-〔3-(2-羥苯基)-2-丙烯醯基〕哌啶、1-(蒽醌-2)乙基咪唑羧酸酯等。熱鹼產生劑,可列舉例如:N-(2-硝基苯基氧羰基)咪唑、N-(3-硝基苯基氧羰基)咪唑等。
大氣環境下,在10℃/min之昇溫速度之條件進行熱重量測量時之前述鹼性物質中之至少一種之鹼性物質之95%重量消失溫度為150℃以上300℃以下者為佳,200℃以上280℃以下者為較佳。由於鹼性物質(鹼性物質含有複數種之情形為其中之至少一種)具有與有機成分相等之95%重量消失溫度,可促進有機成分更有效率且充分的分解消失。
此等之鹼性物質中,從與有機成分之親和性、因鹼之有機成分之分解性及熱安定性之觀點而言,適合使用三辛基胺、三乙醇胺之三級胺。上述鹼性物質,可個別單獨使用,亦可組合2種以上使用。
前述鹼性物質之配合量雖然無特別限定,而相對於前述熱分
解性黏合劑100重量份,1~150重量份為佳,10~100重量份為較佳。
又,前驅層31,例如,可適當含有可塑劑等。
加熱接合用片材3、3’,可用一般方法製造。例如,製造含有為了形成前驅層31之前述各成分的塗漆,以塗漆在基材隔板上塗佈成所定厚度,形成塗佈膜後,乾燥該塗佈膜,即可製造加熱接合用片材3、3’。
作為塗漆所使用的溶劑雖無特別限定,惟較佳係能使前述各成分均一溶解、混練或分散的有機溶劑或酒精溶劑。前述有機溶劑,可列舉例如,為二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、丁酮、環己酮等酮系溶劑、甲苯、二甲苯等。又,前述酒精溶劑,可列舉為乙二醇、二甘醇、1,2-丙二醇、1,3-丙二醇、1,2-丁二醇、1,3-丁二醇、1,4-丁二醇、2-丁烯-1,4-二醇、1,2,6-己三醇、丙三醇、辛二醇、2-甲基-2,4-戊二醇、松油醇。
塗佈方法無特別限定。作為溶劑塗工方法,可列舉例如:薄膜塗佈機、凹版塗佈機、滾輪式塗佈機、反向式塗佈機、刮刀式塗佈機、管刮刀塗佈機、網版印刷等。其中,以塗佈厚度之均一性較高之觀點,較佳係薄膜塗佈機。又,塗佈膜的乾燥條件無特別限定,例如,可以乾燥溫度70~160℃、乾燥時間1~5分鐘進行。又,即使塗佈膜乾燥後,根據溶劑的種類,會有溶劑無全部氣化而殘留於塗膜中之情形。
因應前述乾燥條件,改變構成前驅層31之各成分之比例,因此使前驅層31中之金屬微粒子或熱分解性黏合劑之含有量形成所需的
量,設定前述乾燥條件為佳。
基材隔板,可使用藉由聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或氟素系剥離劑、長鏈烷基丙烯酸酯系剝離劑等之剝離劑進行表面塗佈的塑膠薄膜或紙張等。
加熱接合用片材3、3’的製造方法,例如,前述各成分以攪拌器混合,所得之混合物加壓成形製造加熱接合用片材3、3’的方法等亦為合適。攪拌器可列舉為行星攪拌器等。
(切晶帶)
切晶帶11係在基材1上積層黏著劑層2所構成者。
基材1係附切晶帶之加熱接合用片材10、12之強度母體,較佳係具有紫外線透過性者。基材1,可列舉例如:低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、隨機共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴,乙烯-醋酸乙烯共聚合物、離子鍵聚合物樹脂、乙烯-(甲基)丙烯酸共聚合物、乙烯-(甲基)丙烯酸酯(隨機、交替)共聚合物、乙烯-丁烯共聚合物、乙烯-己烯共聚合物、聚胺酯、聚乙烯對苯二甲酯、聚乙烯萘二甲酯等的聚酯,聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚二苯硫醚、芳綸(紙)、玻璃、玻璃布、氟素樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素樹脂、矽酮樹脂、金屬(箔)、紙等。
又,基材1之材料,可列舉為前述樹脂之交聯體等之聚合物。前述塑膠薄膜,可不做延伸處理,亦可視需要進行單軸或二軸之延伸處理。如藉由延伸處理等賦予熱收縮性之樹脂片材,在切割後藉由熱收縮
該基材1使黏著劑層2與加熱接合用片材3、3’之接著面積降低,可達到使半導體晶片之回收容易化的目的。
基材1之表面,為提高與鄰接層之密著性、保持性等,可實施慣用之表面處理,例如:鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學性或物理性處理,利用底塗劑(例如,下述黏著物質)所進行之塗佈處理。
基材1之厚度並無特別的限制,可適當地決定,一般為5~200μm左右。
用於黏著劑層2之形成的黏著劑並無特別限制,例如,可使用丙烯酸系黏著劑、橡膠系黏著劑等的一般感壓性接著劑。前述感壓性接著劑,基於半導體晶圓或玻璃等怕污染的電子零件之超純水或酒精等有機溶劑之清淨洗淨性等觀點而言,較佳係以丙烯酸系聚合物為基礎聚合物之丙烯酸系黏著劑。
作為前述丙烯酸系聚合物,可列舉例如:(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、s-丁酯、t-丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一酯、十二酯、十三酯、十四酯、十六酯、十八酯、二十酯等烷基之碳數1~30,尤其是碳數4~18的直鏈狀或分枝鏈狀之烷基酯等),以及(甲基)丙烯酸環烷基酯(例如,環戊酯、環己酯等)之1種或2種以上作為單體成分使用之丙烯酸系聚合物等。又,(甲基)丙烯酸酯即係指丙烯酸酯及/或甲基丙烯酸酯,本發明中之(甲基),皆為同樣意義。
前述丙烯酸系聚合物,以凝集力、耐熱性等的改良為目的,
可視需要含有與前述(甲基)丙烯酸烷酯或環烷酯共聚合之其他單體成分之對應單位。此種單體成分,可列舉例如:丙烯酸、甲基丙烯酸、羧乙基(甲基)丙烯酸酯、羧戊基(甲基)丙烯酸酯、衣康酸、馬來酸、富馬酸、丁烯酸等含羧基之單體;馬來酸酐、衣康酸酐等酸酐單體;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(4-羥基甲基環己基)甲基(甲基)丙烯酸酯等含羥基之單體;苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、磺酸丙基(甲基)丙烯酸酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體;2-羥乙基丙烯醯基磷酸酯等含磷酸基之單體;丙烯醯胺、丙烯腈等。此等可共聚合之單體成分可使用1種或2種以上。此等可共聚合之單體之使用量在全部單體成分之40重量%以下為佳。
進一步,為使前述丙烯酸系聚合物進行交聯,可視需要包含多官能性單體等作為共聚合用單體成分。此種多官能性單體,可列舉例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸(甲基)丙烯酸酯等。此等多官能性單體亦可使用1種或2種以上。從黏著特性等之觀點而言,多官能性單體之使用量在全部單體成分之30重量%以下為佳。
前述丙烯酸系聚合物,係可藉由使單一單體或2種以上之單體混合物進行聚合而得。聚合亦可以溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任一方式進行。以防止對潔淨之被黏物之污染等之觀點而言,以低分子量物質之含量較小為佳。以此點而言,丙烯酸系聚合物之數量平均分子量較佳係10萬以上,更佳係20萬~300萬左右,特佳係30萬~100萬左右。
此外,於前述黏著劑中,為提高基礎聚合物之丙烯酸系聚合物等之數量平均分子量,因此可適宜地採用外部交聯劑。作為外部交聯方法之具體手段,可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙環化合物、三聚氰胺系交聯劑等所謂交聯劑使其反應之方法。使用外部交聯劑時,其使用量係根據與該應交聯之基礎聚合物之平衡,進一步,可根據作為黏著劑之使用用途來適當決定。一般而言,對於前述基礎聚合物100重量份,以約5重量份以下,進一步以0.1~5重量份配合為佳。進一步,黏著劑視需要,除前述成分外,亦可使用過去習知的各種黏著賦予劑、抗老化劑等之添加劑。
黏著劑層2能以放射線硬化型黏著劑形成。放射線硬化型黏著劑,藉由紫外線等放射線的照射增大交聯程度,從而可容易地使其黏著力降低,藉由僅在圖2所示之黏著劑層2之加工黏貼部分之對應部分2a照射放射線,能使與其他部分2b之黏著力造成差異。
此外,藉由使圖2所示之加熱接合用片材3’同時與放射線硬化型之黏著劑層2硬化,可容易地形成黏著力明顯降低之前述部分2a。由於在硬化、黏著力降低之前述部分2a貼附加熱接合用片材3’,
在黏著劑層2之前述部分2a與加熱接合用片材3’之界面,具有在撿拾時容易剝離的性質。另一方面,未照射放射線之部分具有足夠的黏著力,而形成前述部分2b。又,對黏著劑層之放射線照射,亦可在切割後撿拾前進行。
如同前述,圖1所示之附切晶帶之加熱接合用片材10之黏著劑層2中,由未硬化之放射線硬化型黏著劑所形成的前述部分2b係與加熱接合用片材3黏著,能確保切割時之保持力。此種放射線硬化型黏著劑能將用以固定晶片狀加工品(半導體晶片等)於基板等被黏物之加熱接合用片材3,在接著‧剝離的平衡良好情形下進行支撐,圖2所示附切晶帶之加熱接合用片材11之黏著劑層2中,前述部分2b能固定晶片環。
放射線硬化型黏著劑可使用具有碳-碳雙鍵等放射線硬化性之官能基,且表現黏著性之物質,並無特別限制。放射線硬化型黏著劑,可例示如,在前述丙烯酸系黏著劑、橡膠系黏著劑等一般感壓性黏著劑上,配合放射線硬化性之單體成分或低聚物成分之添加型放射線硬化型黏著劑。
配合放射線硬化性之單體成分,可列舉例如:胺基甲酸酯低聚物、胺基甲酸(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又,放射線硬化性之低聚物成分可列舉胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物,其分子量係100~30000左右之範圍者為適當。放射線硬化性
之單體成分或低聚物成分之配合量,因應前述黏著劑層之種類,可適當決定黏著劑層之黏著力之可降低量。一般而言,對於構成黏著劑之丙烯酸系聚合物等的基礎聚合物100重量份,例如為5~500重量份,較佳為40~150重量份左右。
此外,放射線硬化型黏著劑,可列舉除前述說明之添加型放射線硬化型黏著劑外,基礎聚合物還可列舉使用內在型之放射線硬化型黏著劑,其係在聚合物側鏈或主鏈中間或主鏈末端具有碳-碳雙鍵者。內在型放射線硬化型黏著劑,因不需含有低分子成分之低聚物成分等或含量不多,故低聚物成分等不會隨時間經過在黏著劑中移動,能形成安定層構造之黏著劑層而較佳。
前述具有碳-碳雙鍵之基礎聚合物,可使用具有碳-碳雙鍵且具有黏著性者,並無特別限制。作為此種基礎聚合物,基本骨架係以丙烯酸系聚合物者為佳。作為丙烯酸系聚合物之基本骨架,可列舉前述例示之丙烯酸系聚合物。
前述對丙烯酸系聚合物之碳-碳雙鍵之導入法無特別限制,可採用各種方法,以分子設計之觀點,係以碳-碳雙鍵導入聚合物側鏈為容易。可列舉例如,事先,在丙烯酸系聚合物中共聚合具有官能基之單體後,將可與此官能基反應之官能基以及具有碳-碳雙鍵之化合物,在維持碳-碳雙鍵之放射線硬化性狀態下使其縮合或加成反應之方法。
此等官能基之組合之例,可列舉羧酸基及環氧基、羧酸基和氮丙環基、羥基及異氰酸酯基等。此等官能基之組合中,從追蹤反應之容易度而言,係以羥基和異氰酸酯基之組合較適合。此外,根據此等官能基
之組合,若是生成前述具有碳-碳雙鍵之丙烯酸系聚合物之組合時,官能基在丙烯酸系聚合物和前述化合物之任一側皆可;而前述較佳之組合,丙烯酸系聚合物具有羥基,前述化合物具有異氰酸酯基之情形則為合適。此種情形,具有碳-碳雙鍵之異氰酸酯化合物,可列舉例如:甲基丙烯醯異氰酸酯、2-甲基丙烯醯氧乙基異氰酸酯、m-異丙烯-α、α-二甲基芐基異氰酸酯等。此外,作為丙烯酸系聚合物,前述例示之含有羥基之單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二甘醇單乙烯醚之醚系化合物等用於共聚合之物。
前述內在型之放射線硬化型黏著劑,可單獨使用前述含有碳-碳雙鍵之基礎聚合物(尤其係丙烯酸系聚合物),也可在不惡化其特性的程度配合前述放射線硬化性之單體成分或低聚物成分。放射線硬化性之低聚物成分等,對於通常基礎聚合物100重量份係30重量份之範圍內,較佳則係0~10重量份之範圍。
前述放射線硬化型黏著劑,係藉由紫外線等使其硬化時含有光聚合引發劑。作為光聚合引發劑,可列舉例如:4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己苯酮等之α-酮系化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-〔4-(甲硫)-苯基〕-2-嗎啉丙烷-1等苯乙酮系化合物;苯偶姻乙醚、苯偶姻異丙醚、茴香偶姻甲醚等之苯偶姻乙醚系化合物;芐基二甲基縮酮等之縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯甲酮-1,1-丙二酮-2-(o-乙氧羰基)
肟等之光活性肟系化合物;二苯甲酮、苯甲醯安息香酸、3,3’-二甲基-4-甲氧基二苯甲酮等之二苯甲酮系化合物;噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等之噻噸酮系化合物;樟腦醌;鹵化酮;醯基氧化磷;醯基磷酸酯等。光聚合引發劑之配合量,相對於構成黏著劑之丙烯酸系聚合物等之基礎聚合物100重量份,例如為0.05~20重量份左右。
又,放射線硬化型黏著劑,可列舉例如日本特開昭60-196956號公報所揭露,有2個以上不飽和鍵之加成聚合性化合物,含有具有環氧基之烷氧基矽烷等光聚合性化合物、及羰基化合物、有機硫磺化合物、過氧化物、胺、鎓鹽系化合物等之含有光聚合引發劑之橡膠系黏著劑或丙烯酸系黏著劑等。
前述放射線硬化型之黏著劑層2中,可視需要,含有藉由放射線照射來著色之化合物。藉由放射線照射,根據黏著劑層2含有著色之化合物,可僅著色被放射線照射之部分。亦即,可著色圖1所示加工黏貼部分3a之對應部分2a。因此,能以目視直接判斷黏著劑層2是否被放射線照射過,加工黏貼部分3a容易被識別,加工之貼合更為容易。又,用光感測器等檢測半導體晶片時,其檢測精度提高,半導體晶片之撿取時不會發生錯誤操作。藉由放射線照射著色之化合物,在放射線照射前為無色或淺色,藉由放射線照射成為有色之化合物,可列舉例如無色染料等。藉由放射線著色之化合物之使用比例,可適當設定。
黏著劑層2之厚度,雖無特別限定,但從晶片切斷面之缺陷
防止或加熱接合用片材3、3’之固定保持之兼顧性等觀點而言,係以1~50μm左右為佳。較佳為2~30μm,更佳為5~25μm。
本實施型態之切晶帶11,例如,能以如下製作。
首先,基材1,可由過去習知的製膜方法來製膜。該製膜方法,可例示如壓延(calendaring)製膜法、在有機溶劑中之鑄膜(casting)法、在密閉系統之吹膜擠出法、T模擠出法、共擠出法、乾式層壓法等。
接著,基材1上塗佈黏著劑組成物溶液形成塗佈膜後,該塗佈膜在所定條件下乾燥(視需求加熱交聯),形成黏著劑層2。塗佈方法無特別限定,可列舉例如,滾輪塗工、網版塗工、凹版塗工等。又,乾燥條件,例如可在乾燥溫度80~150℃、乾燥時間0.5~5分之間之範圍內進行。又,在隔板上塗佈黏著劑組成物形成塗佈膜後,在前述乾燥條件下乾燥塗佈膜而形成黏著劑層2亦可。之後,在基材1上將黏著劑層2與隔板一起貼合。藉此,製作切晶帶11。
附切晶帶之加熱接合用片材10、12,可用一般方法製造。例如,藉由切晶帶11之黏著劑層2與加熱接合用片材3貼合,可製造附切晶帶之加熱接合用片材10。
附切晶帶之加熱接合用片材10,以隔板覆蓋加熱接合用片材3者為佳。可列舉例如,貼合切晶帶11及加熱接合用片材3後,剝離於加熱接合用片材3積層之前述基材隔板,於剝離前述基材隔板後之附切晶帶之加熱接合用片材10之加熱接合用片材3之露出面,貼附隔板之方法。亦即,切晶帶11、加熱接合用片材3、及前述隔板之順序所積層之形態為佳。
上述實施型態,係說明關於切晶帶及加熱接合用片材所積層
之附切晶帶之加熱接合用片材。然而,本發明之加熱接合用片材,亦可提供不貼合切晶帶之狀態。
加熱接合用片材,若為不貼合切晶帶之形態之情形,夾於2片之隔板形成附有兩面隔板之加熱接合用片材為佳。亦即,第1隔板、加熱接合用片材、及第2隔板之順序所積層而形成附有兩面隔板之加熱接合用片材為佳。
圖3,表示附有兩面隔板之加熱接合用片材之一實施型態之斷面模式圖。
圖3所示之附有兩面隔板之加熱接合用片材30,具有第1隔板32、加熱接合用片材3、及第2隔板34之順序所積層之構成。第1隔板32、及第2隔板34,可使用與前述基材隔板相同之物。
又,加熱接合用片材,若為不貼合切晶帶之形態之情形,僅於加熱接合用片材之一側之面積層隔板之形態亦可。
(半導體裝置之製造方法)
本實施型態之半導體裝置之製造方法包含:準備前述加熱接合用片材之步驟,及介由前述加熱接合用片材,使半導體晶片在被黏物上加熱接合之加熱接合步驟(以下,亦稱為第1製法)。
此外,本實施型態之半導體裝置之製造方法亦包含:準備前述所記載之附切晶帶之加熱接合用片材之步驟,及將前述附切晶帶之加熱接合用片材之加熱接合用片材與半導體晶圓之背面貼合之貼合步驟,及
將前述半導體晶圓與前述加熱接合用片材一起切割,形成晶片狀之半導體晶片之切晶步驟,及將前述半導體晶片,從前述附切晶帶之加熱接合用片材,與前述加熱接合用片材一起撿拾之撿拾步驟,及介由前述加熱接合用片材,將前述半導體晶片於被黏物上進行加熱接合之加熱接合步驟(以下,亦稱為第2製法)。
第1製法中半導體裝置之製造方法,相對於第2製法中半導體裝置之製造方法,其使用附切晶帶之加熱接合用片材,係在第1製法中半導體裝置之製造方法中,於以單體使用加熱接合用片材之部分不同,而其他部分相同。第1製法中半導體裝置之製造方法中,準備加熱接合用片材後,若將其與切晶帶進行貼合步驟,其後,可與第2製法中半導體裝置之製造方法相同地進行。因此,以下針對第2製法中半導體裝置之製造方法加以說明。
本實施型態中半導體裝置之製造方法中,首先,準備附切晶帶之加熱接合用片材10、12(準備步驟)。附切晶帶之加熱接合用片材10、12,適宜地剝離在加熱接合用片材3、3’上任意設置之隔板,如以下使用。以下,一邊參照圖3使用附切晶帶之加熱接合用片材10之情形為例,加以說明。
首先,附切晶帶之加熱接合用片材10中加熱接合用片材3之半導體晶圓黏貼部分3a上,壓接半導體晶圓4,將此保持接著並固定(貼合步驟)。本步驟,是用壓著滾輪等之按壓方法一邊按壓一邊進行。裝載時之黏貼溫度並無特別限定,例如在23℃~90℃之範圍內為佳。
半導體晶圓4,於一側之面形成電極墊,於其他的面(以下,亦稱作背面)之最表面形成銀薄膜為佳。前述銀薄膜之厚度,可列舉例如,10nm~1000nm。此外,於半導體晶圓4與前述銀薄膜之間,進一步,亦可形成鈦薄膜。前述鈦薄膜之厚度,可列舉例如,10nm~1000nm。若形成前述銀薄膜,則後述之加熱接合步驟中,半導體晶片5與加熱接合用片材3可強固地加熱接合。此外,若形成前述鈦薄膜則電極之信賴性提升。前述銀薄膜、及前述鈦薄膜,例如,可藉由氣相沉積形成。
接著,進行半導體晶圓4之切割(切晶步驟)。藉此,切斷並單片化半導體晶圓4成所定之尺寸,從而製造半導體晶片5。切晶方法雖無特別限定,例如可從半導體晶圓4之迴路面側,按照普通方法進行。此外,本步驟,例如可採用進行切割至附切晶帶之加熱接合用片材10之所謂全切之切斷方式等。本步驟所用的切晶裝置並無特別限定,可使用過去習知之物。此外,由於半導體晶圓4,係藉由附切晶帶之加熱接合用片材10接著固定,故可抑制晶片缺陷或晶片飛散的同時,亦可抑制半導體晶圓4的破損。
接著,為剝離在附切晶帶之加熱接合用片材10上接著固定之半導體晶片5,進行半導體晶片5之撿拾(撿拾步驟)。撿拾之方法無特別限定,可採用過去各種習知的方法。可列舉例如將個別半導體晶片5從附切晶帶之加熱接合用片材10側藉由針突起,再將突起之半導體晶片5經由撿拾裝置撿拾之方法等。
作為撿拾條件,以防止破片之觀點,針的突起速度在0.5
~100mm/秒為佳,在5~10mm/秒較佳。
此處之撿拾,係黏著劑層2為紫外線硬化型之情形,其係在該黏著劑層2照射紫外線後進行。藉此,對於黏著劑層2之加熱接合用片材3之黏著力降低,使半導體晶片5之剝離變得容易。其結果,可在撿拾半導體晶片5時不使其受損。紫外線照射時之照射強度、照射時間等之條件並無特別限定,可視需要適當設定。此外,紫外線照射所使用之光源,可使用習知之物。此外,黏著劑層事先照射紫外線使其硬化,貼合此硬化之黏著劑層與加熱接合用片材時,並不需紫外線照射。
接著,將撿拾之半導體晶片5,介由加熱接合用片材3,而黏晶(加熱接合)於被黏物6(加熱接合步驟)。被黏物6,可列舉有導線架、TAB薄膜、基板或另外製作之半導體晶片等。被黏物6,例如,可為容易變形之變形型被黏物,亦可為不易變形之非變形型被黏物(半導體晶圓等)。
前述導線架,可列舉Cu導線架、42Alloy導線架等之金屬導線架。又,前述基板,可使用過去習知之物。可列舉例如玻璃環氧基、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等構成之有機基板。其中,若使用金屬導線架,可藉由加熱接合與金屬微粒子一體化。又,前述基板,可列舉在陶瓷板等之絕緣基板上,積層銅電路基板之絕緣電路基板。若使用絕緣電路基板,例如,可製造進行電力的控制或供給之電力用半導體裝置。
前述加熱接合步驟,藉由加熱燒結金屬微粒子的同時,可視需要熱分解熱分解性黏合劑等之殘留有機成分或使其揮發。加熱溫度,以
180~400℃為佳、190~370℃較佳、在200~350℃進行更佳。此外,加熱時間,以0.3~300分為佳、0.5~240分較佳、在1~180分進行更佳。又加熱接合,亦可在加壓條件下進行。加壓條件,以1~500kg/cm2的範圍內為佳、5~400kg/cm2的範圍內更佳。在加壓下之加熱接合,例如,可用如倒裝焊接機之加熱與加壓可同時進行之裝置來實施。此外,平行平板加壓亦可。
接著,可視需要,如圖4所示,在被黏物6之端子部(內引線)之前端與半導體晶片5上之電極墊(無圖示)以焊接導線7做電氣連接(導線焊接步驟)。前述焊接導線7,例如,可使用金線、鋁線或銅線等。進行導線焊接時之溫度,在23~300℃,較佳係在23~250℃之範圍內進行。此外,其加熱時間為數秒~數分內進行。結線為在如前述溫度範圍內之加熱狀態下,藉由超音波之振動能量與藉由施加電壓之壓接能量之併用下進行。
接著,可視需要,如圖4所示,藉由密封樹脂8密封半導體晶片5(密封步驟)。本步驟係為保護在被黏物6所搭載之半導體晶片5或焊接導線7而進行。本步驟可藉由密封用樹脂在模具成型來進行。密封樹脂8,例如使用環氧樹脂。樹脂密封時之加熱溫度,雖然通常在175℃、60~90秒之間進行,但本發明並無限定於此,例如可在165~185℃、數分內處理。藉此,使密封樹脂8硬化。又,本密封步驟,亦可採用在片材狀之密封用片材嵌入半導體晶片5之方法(例如,參照日本特開2013-7028號公報)。此外,除了藉由模具之密封樹脂之成型以外,在箱型容器內流入矽酮凝膠之凝膠密封型亦可。
接著,可視需要進行加熱,使在前述密封步驟中硬化不足之密封樹脂8完全硬化(後硬化步驟)。本步驟之加熱溫度,因密封樹脂之種類而異,例如在165~185℃之範圍內,加熱時間為0.5~8小時左右。
又,本發明之加熱接合用片材、及附切晶帶之加熱接合用片材,亦可適用於積層複數半導體晶片且立體實裝之情形。此時,可於半導體晶片間積層加熱接合用片材及隔離層,亦可不積層隔離層,而在半導體晶片間僅積層加熱接合用片材,可視製造條件或用途等作適當變更。
此外,本發明之加熱接合用片材,及附切晶帶之加熱接合用片材,不限定於上述例示之用途,可利用2者於加熱接合。
以下,關於本發明所使用之實施例做詳細的說明,但本發明在不超過其主旨之情況下,並不限於以下之實施例。
實施例所使用之成分如同以下。
含有燒結性金屬粒子之糊膏:應用奈米粒子研究所製的ANP-1
熱分解性黏合劑:PPC(聚丙烯碳酸酯樹脂)、Empower公司製之「QPAC40」、在23℃固態
鹼性物質:三乙醇胺(TEA):東京化成工業股份公司製
鹼性物質:三辛基胺(TOA):東京化成工業股份公司製
鹼性物質:三丁基胺(TBA):東京化成工業股份公司製
有機溶劑:甲乙酮(MEK)
<實施例1~3、比較例1~2>
將含有燒結性金屬粒子之糊膏、表1所示之熱分解性黏合劑及鹼性物質分別以表1所示之配合量,連同有機溶劑倒入自轉‧公轉攪拌器(THINKY製、ARE-310),以2000rpm攪拌8分鐘,製作塗漆。所得到之塗漆,在離型處理薄膜(三菱樹脂(股)製的「MRA38」)上塗佈‧乾燥。塗佈係使用塗佈器,使乾燥後之塗膜之厚度形成為45μm。乾燥以防爆乾燥機進行。乾燥條件為5分鐘在110℃。藉此,得到實施例及比較例之厚度45μm之加熱接合用片材。
《評價》
於以下之項目,評價實施例及比較例之樣品。個別之結果表示於表1。
(熱重量測量求得95%重量消失溫度之方法)
由熱重量測量法之有機成分之95%重量消失溫度之測量,係使用Rigaku製之TG8120。將加熱接合用片材(燒結前)10mg,放入鋁製容器,大氣環境下,以昇溫速度10℃/min,溫度範圍從25℃至500℃進行測量,測量試料之重量變化。有機成分之重量消失量,在500℃之時間點之重量消失量為100%,藉由讀取消失相對於此之重量之95%之溫度作為95%重量消失溫度。於圖5表示藉由對實施例1之加熱接合用片材之熱重量測量而得到之圖表。
(信賴性評價-剩餘接合面積率之測量)
準備於背面依序形成Ti層(厚50nm)及Ag層(厚100nm)之矽晶片(矽晶片之厚350μm、縱5mm、橫5mm)。於準備之矽晶片之Ag層面,重疊製作之加熱接合用片材。在此狀態下,通過層壓機。
層壓機之條件為溫度70℃、壓力0.3MPa、速度10mm/秒。
另外,準備以Ag層(厚5μm)覆蓋整面之銅板(銅板之厚度3mm)。於準備之銅板上,暫時接著附有矽晶片之加熱接合用片材(在上述製作者)。暫時接著時之壓力為0.1MPa。此外,暫時接著時,事先加熱銅板至70℃。
接著,在加壓加熱條件下將加熱接合用片材燒結並與矽晶片及銅板接合(壓力10MPa、昇溫速度90℃/分、燒結溫度200℃、燒結時間1.5分鐘)。接合,係使用燒結裝置(伯東公司製、HTM-3000)。又,加壓以平板加壓進行,昇溫步驟及燒結步驟之間一直維持加壓。此外,昇溫及燒結時之環境為大氣環境。
加熱後(燒結步驟結束後),空氣冷卻至170℃,之後,水冷至80℃。又,水冷,係於加壓板內附設之水冷式冷卻板。藉此,得到評價用樣品。
接著,將評價用樣品放入冷熱衝擊試驗機(ESPEC公司製、「TSE-103ES」),給予100循環-40℃~200℃之冷熱衝擊。又,此時,在-40℃及200℃個別維持15分鐘。
100循環後,使用超音波影像裝置〔SAT〕(日立建機Finetech製、「FineSAT II」),為了確認矽晶片與銅板於燒結層接合之部分,進行拍攝。使用之傳感器(探測器),係PQ-50-13:WD〔頻率50MHz〕,拍攝模式為「反射」。
使用圖像解析軟體(美國國立衛生研究所開發之開源軟體「imageJ」),求得得到的像中接合而剩餘部分之面積(剩餘接合面
積),計算相對於全體面積之剩餘接合面積之比例(剩餘接合面積率)。藉由超音波影像裝置之像,矽晶片及銅板剝離之部分為白色,接合剩餘部分為黑色而二值化表示(閾值為127。0~255之層次所分成256分之中0~127為黑色部分,128~255為白色部分二值化)。剩餘接合面積率30%以上之情形為「○」,低於30%之情形為「×」作評價。圖6A及圖6B分別表示對實施例2及比較例1之加熱接合用片材之接合信賴性實驗之結果之超音波圖像。
(結果及考察)
實施例1~3之信賴性評價為良好。另一方面,比較例1~2之信賴性評價為劣。圖6A及圖6B之超音波圖像中,相對於實施例2之剩餘接合面積率50%,比較例1為10%。此結果推測是由於比較例1~2之任一者之有機成分之95%重量消失溫度超過300℃,而產生有機成分所導致之燒結性金屬粒子之燒結之阻礙為主要原因。
Claims (3)
- 一種加熱接合用片材,其係具有藉由加熱形成燒結層之前驅層之加熱接合用片材,其特徵係:前述前驅層,係含有燒結性金屬粒子及有機成分;大氣環境下,在10℃/min之昇溫速度之條件進行前述加熱接合用片材之熱重量測量時之前述有機成分之95%重量消失溫度為150℃以上300℃以下;前述有機成分,係含有在23℃為固態之熱分解性黏合劑、及鹼性物質;前述鹼性物質,係三己胺、三庚基胺或三辛胺。
- 如申請專利範圍第1項所記載之加熱接合用片材,其中,大氣環境下,在10℃/min之昇溫速度之條件進行熱重量測量時之前述鹼性物質之中之至少一種之鹼性物質之95%重量消失溫度為150℃以上300℃以下。
- 一種附切晶帶之加熱接合用片材,其特徵係,其係具有切晶帶,及積層於前述切晶帶上如申請專利範圍第1或2項所記載之加熱接合用片材。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014055232A (ja) * | 2012-09-12 | 2014-03-27 | Sumitomo Seika Chem Co Ltd | 金属ペースト組成物 |
TW201437311A (zh) * | 2013-02-20 | 2014-10-01 | Nitto Denko Corp | 膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置 |
TW201509869A (zh) * | 2013-09-05 | 2015-03-16 | Henkel IP & Holding GmbH | 金屬燒結膜組合物 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002020570A (ja) * | 2000-07-05 | 2002-01-23 | Mitsubishi Rayon Co Ltd | 焼成型ペースト用アクリル系バインダー樹脂組成物 |
JP2003249471A (ja) * | 2002-02-22 | 2003-09-05 | Nitto Denko Corp | 半導体ウエハ加工用保護シート |
JP4421972B2 (ja) * | 2004-04-30 | 2010-02-24 | 日東電工株式会社 | 半導体装置の製法 |
WO2008065728A1 (fr) * | 2006-11-29 | 2008-06-05 | Nihon Handa Co., Ltd. | Composition de particules métalliques de frittage ayant une plasticité, procédé de production de celle-ci, agent de liaison et procédé de liaison |
EP2527403A4 (en) * | 2010-01-22 | 2013-12-04 | Arakawa Chem Ind | EASILY HEAT-RELATED BINDER RESIN, BINDER RESIN COMPOSITION, AND USE OF THIS COMPOSITION |
JP6061427B2 (ja) * | 2011-06-16 | 2017-01-18 | 学校法人早稲田大学 | 電子部品の接合材、接合用組成物、接合方法、及び電子部品 |
KR101391696B1 (ko) * | 2011-11-23 | 2014-05-07 | 제일모직주식회사 | 이방 전도성 조성물 및 필름 |
JP6382228B2 (ja) * | 2014-08-29 | 2018-08-29 | 古河電気工業株式会社 | 導電性接着フィルム |
JP6682235B2 (ja) * | 2014-12-24 | 2020-04-15 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
JP6505571B2 (ja) * | 2015-09-30 | 2019-04-24 | 日東電工株式会社 | 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート |
-
2016
- 2016-06-24 JP JP2016125322A patent/JP6918445B2/ja active Active
-
2017
- 2017-05-23 US US16/308,937 patent/US20190311936A1/en active Pending
- 2017-05-23 CN CN201780039011.2A patent/CN109451762B/zh active Active
- 2017-05-23 EP EP17815083.5A patent/EP3477689B1/en active Active
- 2017-05-23 WO PCT/JP2017/019191 patent/WO2017221614A1/ja unknown
- 2017-06-01 TW TW106118152A patent/TWI773672B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014055232A (ja) * | 2012-09-12 | 2014-03-27 | Sumitomo Seika Chem Co Ltd | 金属ペースト組成物 |
TW201437311A (zh) * | 2013-02-20 | 2014-10-01 | Nitto Denko Corp | 膜狀接著劑、附膜狀接著劑之切晶帶、半導體裝置之製造方法及半導體裝置 |
TW201509869A (zh) * | 2013-09-05 | 2015-03-16 | Henkel IP & Holding GmbH | 金屬燒結膜組合物 |
Also Published As
Publication number | Publication date |
---|---|
EP3477689B1 (en) | 2020-07-29 |
TW201801823A (zh) | 2018-01-16 |
CN109451762A (zh) | 2019-03-08 |
EP3477689A1 (en) | 2019-05-01 |
EP3477689A4 (en) | 2019-08-21 |
WO2017221614A1 (ja) | 2017-12-28 |
JP2017228714A (ja) | 2017-12-28 |
US20190311936A1 (en) | 2019-10-10 |
CN109451762B (zh) | 2023-04-04 |
JP6918445B2 (ja) | 2021-08-11 |
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