TWI688443B - 加熱接合用片材、以及附切晶帶加熱接合用片材 - Google Patents

加熱接合用片材、以及附切晶帶加熱接合用片材 Download PDF

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TWI688443B
TWI688443B TW105131683A TW105131683A TWI688443B TW I688443 B TWI688443 B TW I688443B TW 105131683 A TW105131683 A TW 105131683A TW 105131683 A TW105131683 A TW 105131683A TW I688443 B TWI688443 B TW I688443B
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sheet
heating
bonding
precursor layer
heating bonding
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TW105131683A
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TW201722580A (zh
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菅生悠樹
鎌倉菜穗
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日商日東電工股份有限公司
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Abstract

本發明提供一種藉由均一的厚度防止接合不均，可賦予高溫接合信賴性之加熱接合片材，及具有該加熱接合用片材之附切晶帶之加熱接合用片材。本發明所提供之加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之最大厚度及最小厚度係在前述平均厚度之±20%之範圍內。本發明之加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視野測量時之表面粗度Sa係2μm以下。

Description

加熱接合用片材、以及附切晶帶加熱接合用片材
本發明係關於加熱接合用片材，以及附切晶帶之加熱接合用片材。
半導體裝置之製造中，將半導體元件接著在金屬導線架等被黏物之方法(所謂的晶片接合法)，從過去的金-矽共晶開始、發展到藉由焊接、樹脂膏之方法。現今，有使用導電性之樹脂膏之方法。
然而，使用導電性樹脂糊膏之方法，由於空隙之產生而導電性降低及糊膏之厚度不均，由於溢出污染墊子等情形發生。
另一方面，近年，進行電力控制或供給的電力用半導體裝置的普及變得顯著。電力用半導體裝置因電流隨時在流通，發熱量大。因此，使用在電力用半導體裝置的接著劑被期望具有高散熱性和低電阻。
電力用半導體裝置要求低損失之高速作動。過去，電力用半導體裝置使用IGBT(絕緣閘雙極電晶體，Insulated Gate Bipolar Transistor)或MOSFET(金氧半場效應電晶體，Metal-Oxide-Semiconductor Field-Effect Transistor)等的使用Si的半導體。近年，使用SiC或GaN等的半導體也被開發，可預想以後之擴大發展。
使用SiC或GaN的半導體，有能隙大、絕緣破壞電場高等特徵，可低損失、高速作動、且高溫作動。高溫作動，是在熱環境嚴苛的汽車或小型電力變換機等之優勢所在。用在熱環境嚴苛用途的半導體裝置，預計係在250℃左右的高溫作動，習知的接合‧接著材料之焊接和導電性接著劑上會有熱特性、信賴性的問題產生。因此，過去曾提案含有燒結金屬粒子的膏狀材料(例如參照專利文獻3)。含有燒結金屬粒子的膏狀材料裡，係含有奈米‧微米尺寸的金屬粒子，這些金屬粒子在奈米尺寸效果下會以比較一般的熔點更低的溫度，進行熔解，並進行粒子間的燒結。
【先前技術文獻】 【專利文獻】
【專利文獻1】日本特開2014-111800號公報
然而，含有燒結金屬粒子之膏狀材料，由於呈糊膏狀態，與導電性樹脂膏相同，形成厚度不均，因而，產生接合不均而有尤其在高溫之接合信賴性降低之情形。
本發明有鑑於前述問題點，其目的在於提供一種藉由均一的厚度防止接合不均，可賦予高溫接合信賴性之加熱接合片材，及具有該加熱接合用片材之附切晶帶之加熱接合用片材。
本案發明人等，檢討關於可解決前述傳統的問題點之結果，藉由採用下述之構成，能夠解決前述課題，從而完成本發明。
亦即，本發明之一實施型態之加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之最大厚度及最小厚度係在前述平均厚度之±20%之範圍內。
該當加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，藉由施予加熱處理得到燒結層，因此用於作業環境為高溫之電力半導體裝置等之接合亦可發揮高的接合信賴性。此外，前驅層之平均厚度係5μm~200μm，且前述前驅層之最大厚度及最小厚度係在前述平均厚度之±20%之範圍內，因此厚度之均一性為高等級而被滿足，藉此防止接合不均，可提升高溫接合信賴性。
本發明之其他實施型態之加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視野測量時之表面粗度Sa係2μm以下。
該當加熱接合用片材，係具有藉由加熱形成燒結層之前驅層，藉由施予加熱處理得到燒結層，因此用於作業環境為高溫之電力半導 體裝置等之接合亦可發揮高的接合信賴性。此外，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視野測量時之表面粗度Sa係2μm以下。藉此，抑制在厚度方向之凹凸，因此厚度之均一性為高等級而被滿足，藉此防止接合不均，可提升高溫接合信賴性。
關於該當加熱接合用片材，在大氣環境下從23℃至400℃以10℃/min之昇溫速度進行熱示差熱重量測定時，以下述式得到之重量減少率△W為-9%~-3%為佳。
△W(%)={(W400-W23)/W23}×100
(式中，W23為在23℃之加熱接合用片材之重量，W400為在400℃之加熱接合用片材之重量。)
若於前驅層之燒結時殘存大量之有機成分等則阻礙前驅層之燒結，所得到的燒結層之強度或熱特性降低。因該當加熱接合用片材係上述範圍之加熱時之重量減少率，藉由前驅層轉化為燒結層時之加熱從而充分除去加熱接合用片材含有之有機成分或溶劑等。藉此前驅層之燒結之進行變得充分，可提高接合信賴性。此外，若重量減少率在上述範圍，則厚度之均一性良好。
前述構成中，前述前驅層，係含有在23℃為固態之熱分解性黏合劑為佳。
若前述前驅層含有在23℃為固態之熱分解性黏合劑，則加熱接合步驟前，容易維持片材形狀。此外，加熱接合步驟時容易熱分解。
前述構成中，前述前驅層，係含有金屬微粒子；前述金屬微 粒子選自銀、銅、氧化銀及氧化銅所成群中至少1種為佳。
若含有金屬微粒子；前述金屬微粒子選自銀、銅、氧化銀及氧化銅所成群中至少1種，則可更適於加熱接合。
此外，本發明之附切晶帶之加熱接合用片材，其特徵係其具有切晶帶，及積層於前述切晶帶上前述加熱接合用片材。
前述附切晶帶之加熱接合用片材中，因與切晶帶一體成形，故可省略與切晶帶貼合的步驟。此外，因具備前述加熱接合用片材，藉由厚度均一性防止接合不均，可得到良好的接合信賴性。此外，因具有前述前驅層之加熱接合用片材，加熱前述前驅層得到之燒結層係形成為強固者，可提升高溫接合信賴性。
1‧‧‧基材
2‧‧‧黏著劑層
3、3’‧‧‧加熱接合用片材
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被黏物
7‧‧‧焊接導線
8‧‧‧密封樹脂
10、12‧‧‧附有切晶帶之加熱接合用片材
11‧‧‧切晶帶
30‧‧‧附有兩面隔板之加熱接合用片材
31‧‧‧藉由加熱形成燒結層之層
32‧‧‧第1隔板
34‧‧‧第2隔板
【圖1】表示本發明之一實施型態之附切晶帶之加熱接合用片材之斷面模式圖。
【圖2】表示本發明之其他實施型態之附切晶帶之加熱接合用片材之斷面模式圖。
【圖3】表示附有兩面隔板之加熱接合用片材之斷面模式圖。
【圖4】用於說明本實施型態之半導體裝置之一製造方法之斷面模式圖。
【圖5】用於實施例1及比較例1之接合評價之超音波影像裝置之觀察圖像。
以下對於本發明之加熱接合用片材及附切晶帶加熱接合用片材之實施型態，參照圖面說明。然而，在圖之部分或全部，省略說明不必要的部分，或為了便於說明而擴大或縮小等圖式之部分。表示上下等之位置關係之用語，單純為了便於說明而使用，並無限定本發明構成之意圖。
《第1實施型態》
(附切晶帶之加熱接合用片材)
本實施型態中的加熱接合用片材，可列舉如下述說明之附切晶帶之加熱接合用片材中，其係沒有貼上切晶帶的狀態。因此，以下說明附切晶帶之加熱接合用片材，並就加熱用接合片材在其中加以說明。圖1係表示本發明之一實施型態的附切晶帶之加熱接合用片材之斷面模式圖。圖2係表示本發明之另一實施型態的其他附切晶帶之加熱接合片材之斷面模式圖。
如圖1所示，附切晶帶之加熱接合用片材10係具有在切晶帶11上積層加熱接合用片材3之構成。切晶帶11係在基材1上積層黏著劑層2所構成，而加熱接合用片材3設置於該黏著劑層2上。又，本發明，如圖2所示附切晶帶之加熱接合用片材12，亦可以僅在加工黏貼部分上形成加熱接合用片材3’之構成。
(加熱接合用片材)
加熱接合用片材3、3’係片材狀。因並非膏狀，而為片材狀，可得 到良好厚度均一性及運用性。
本實施型態之加熱接合用片材3、3’，係藉由加熱形成燒結層之前驅層31所構成。本實施型態，說明加熱接合用片材為藉由加熱形成燒結層之前驅層為1層之情形，但本發明並不限定於此例。本發明中，藉由加熱形成燒結層之前驅層，亦可為複數積層該前驅層之構成。
此外，本實施型態，說明加熱接合用片材為藉由加熱形成燒結層之前驅層所構成之情形，但本發明並不限定於此例。本發明之加熱接合用片材亦可為2層以上。例如，藉由加熱形成燒結層之前驅層，及其他層(藉由加熱不成為燒結層之層)所積成之構成亦可。
亦即，本發明之加熱接合用片材，只要具有藉由加熱形成燒結層之前驅層即可，其構成並無特別限定。
(藉由加熱形成燒結層之前驅層)
藉由加熱形成燒結層之前驅層31(以下，亦稱作「前驅層31」)之平均厚度為5μm~200μm，較佳為10μm~150μm，更佳為15μm~100μm。藉由使加熱前之前驅層31之平均厚度為上述範圍，可確保片材形狀之維持及厚度均一性。
前驅層31之最大厚度及最小厚度，係在前述厚度±20%之範圍內，較佳為±17%之範圍內，更佳為±15%之範圍內。藉由使前驅層之最大厚度及最小厚度相對平均厚度限縮於規定範圍內，藉此防止接合不均，可提升高溫接合信賴性。又，平均厚度、最大厚度及最小厚度，可藉由實施例之記載方法測定。
前驅層31，係藉由下述拉伸試驗方法所得之拉伸彈性率為 10MPa~3000MPa、12MPa~2900MPa為佳，15MPa~2500M更佳。
拉伸試驗方法：(1)準備厚度200μm、寬10mm、長40mm的加熱接合用片材(拉伸試驗用加熱接合用片材)，作為試驗材料，(2)在夾具間距離為10mm、拉伸速度為50mm/分、23℃的條件下進行拉伸試驗，(3)以所得的應力-應變曲線圖之直線部分之斜率作為拉伸彈性率。
若前驅層31之前述拉伸彈性率為10MPa以上，則可抑制黏晶時加熱接合用片材之構成材料的溢出或覆蓋到晶片表面上。此外，若前述拉伸彈性率係3000MPa以下，則例如在切割時可固定半導體晶圓。
前驅層31，在大氣環境下，昇溫速度10℃/分之條件時，從昇溫23℃到400℃後以能量分散型X射線分析所得之碳濃度為15重量%以下、或12重量%以下為佳，10重量%以下更佳。因前述碳濃度為15重量%以下，前驅層31在昇溫到400℃後有機物幾乎不存在。其結果，加熱接合步驟後，耐熱性優良、在高溫環境也有高信賴性、熱特性。
前驅層31，在大氣環境下，昇溫速度10℃/分的條件時，從23℃到500℃進行熱示差分析時之峰值為150~350℃為佳，峰值為170~320℃較佳，峰值為180~310℃更佳。前述峰值在150~350℃時，有機物(例如，構成前驅層31之樹脂成分) 會在此溫度範圍熱分解。其結果，加熱接合步驟後的耐熱性更優良。
前驅層31，係相對於前驅層31全體而含有金屬微粒子在60~98重量%的範圍內為佳。前述金屬微粒子的含有量，在65~97重量%的範圍內為更佳，在70~95重量%範圍內特佳。若前述金屬微粒子含量在60~98重量%範圍內，則可燒結金屬微粒子，或使其熔融而接合兩個物(例如，半導體晶片及導線架)。
前述金屬微粒子，可列舉為燒結性金屬粒子。
前述燒結性金屬粒子，適合使用金屬微粒子的凝集體。金屬微粒子可列舉由金屬所成之微粒子等。前述金屬可列舉為金、銀、銅、氧化銀、氧化銅等。其中，較佳係選自銀、銅、氧化銀、氧化銅所成群中至少一種。如前述金屬微粒子係選自銀、銅、氧化銀、氧化銅所成群中至少一種時，可更適合地進行加熱接合。
前述燒結性金屬粒子之平均粒徑較佳係0．0005μm以上，更佳係0．001μm以上。平均粒徑之下限，可例示為0．01μm、0．05μm、0．1μm。另一方面，燒結性金屬粒子之平均粒徑較佳係以30μm以下，更佳係25μm以下。平均粒徑之上限，可例示為20μm、15μm、10μm、5μm。
前述燒結性金屬粒子之平均粒徑由以下方法測量。亦即，前述燒結性金屬粒子用SEM(掃描式電子顯微鏡)觀察，測量平均粒徑。又，SEM觀察中，例如，燒結性金屬粒子為微米尺寸時，用5000倍觀察；亞微米尺寸時，用50000倍觀察；奈米尺寸時，用300000倍觀察為佳。
前述燒結性金屬粒子之形狀無特別限定，例如，球狀、棒狀、鱗片狀、不定形。
前驅層31，含有低沸點黏合劑為佳。前述低沸點黏合劑，用於使前述金屬微粒子之處理變得容易。具體而言，可使用使前述金屬微粒子分散於前述低沸點黏合劑之含有金屬微粒子之糊膏。此外，亦用於調整燒結層之前驅層任意之機械物性而含有為佳。
前述低沸點黏合劑，在23℃為液狀。本說明書中，「液狀」係包含半液狀。具體而言，藉由動態黏彈性測定裝置(流變儀)黏度測定在23℃之黏度為100，000Pa‧s以下。
<黏度測定條件>
流變儀：Thermo SCIENTFIC公司製、「MER III」
治具：平行板20mmφ
間距100μm
剪斷速度1/秒
前述低沸點黏合劑之具體例，可列舉例如，戊醇、己醇、庚醇、辛醇、1-癸醇、乙二醇、二甘醇、丙二醇、丁二醇、α-松油醇、1,6-己二醇、異莰基環己醇(MTPH)等之一價及多價醇類、乙二醇丁醚、乙二醇苯醚、二甘醇甲醚、二甘醇乙醚、二甘醇丁醚、二甘醇異丁醚、二甘醇己醚、三甘醇甲醚、二甘醇二甲醚、二甘醇二乙醚、二甘醇二丁醚、二甘醇丁甲醚、二甘醇異丙甲醚、三甘醇二甲醚、三甘醇丁甲醚、丙二醇丙醚、二丙二醇甲醚、二丙二醇乙醚、二丙二醇丙醚、二丙二醇丁醚、二丙二醇二甲醚、三丙二醇甲醚、三丙二醇二甲醚等醚類、乙二醇乙醚乙酸 酯、乙二醇丁醚乙酸酯、二甘醇乙醚乙酸酯、二甘醇丁醚乙酸酯、二丙二醇甲基醚乙酸酯(DPMA)等。亦可將此等之2種以上併用。其中，將沸點相異之2種類併用為佳。若使用沸點相異之2種類，則於片材形狀之維持方面優異。
前驅層31，含有在23℃為固體之熱分解性黏合劑為佳。若含有前述熱分解性黏合劑，則加熱接合步驟前，容易維持片材形狀。此外，加熱接合步驟時容易熱分解。
本說明書中，「固體」，係具體而言藉由前述流變儀黏度測定在23℃之黏度為大於100，000Pa‧s。
本說明書中所謂「熱分解性黏合劑」，係指加熱接合步驟中可使其熱分解之黏合劑。前述熱分解性黏合劑，在加熱接合步驟後，於燒結層(加熱後之前驅層31)，幾乎不殘留在加熱接合用片材者為佳。前述熱分解性黏合劑，可列舉例如，即使含在前驅層31，大氣環境下，以昇溫速度10℃/分之條件，從23℃昇溫到400℃後以能量分散型X射線分析所得之碳濃度為15重量%以下之材料。例如，作為熱分解黏合劑，如採用更容易熱分解之材料時，即使相對含有量較多，可在加熱接合步驟後，幾乎不殘留於燒結層(加熱後之前驅層31)。
前述熱分解性黏合劑，可列舉聚碳酸酯、丙烯酸樹脂、乙基纖維素、聚乙烯醇等。此等材料可單獨、或混合2種以上使用。其中，從高熱分解性之觀點而言，聚碳酸酯為佳。
前述聚碳酸酯樹脂，若可在加熱接合步驟中使其熱分解者即可，並無特別限定，可列舉為主鏈的碳酸酯基(-O-CO-O-)間不含芳 香族化合物(例如，苯環等)，由脂肪族鏈構成的脂肪族聚碳酸酯，或主鏈的碳酸酯基(-O-CO-O-)間含芳香族化合物的芳香族聚碳酸酯。其中，以脂肪族聚碳酸酯為佳。
前述脂肪族聚碳酸酯，可列舉為聚乙烯碳酸酯、聚丙烯碳酸酯等。其中，以形成片材的塗漆製造中對有機溶劑的溶解性的觀點而言，以聚乙烯碳酸酯為佳。
前述芳香族聚碳酸酯，可列舉主鏈含雙酚A構造者等。
前述聚碳酸酯樹脂的重量平均分子量在10，000~1，000，000的範圍內較合適。又，重量平均分子量是藉由GPC(凝膠滲透層析儀)測量，由聚苯乙烯換算而得之數值。
前述丙烯酸樹脂，在加熱接合步驟可使其熱分解的範圍中，可列舉為碳數30以下，尤其具有碳數4~18的直鏈或者分枝的烷基的丙烯酸，或甲基丙烯酸的酯之1種或2種以上作為成分之聚合物(丙烯酸共聚物)等。前述烷基可列舉例如，甲基、乙基、丙基、異丙基、n-丁基、t-丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、十二烷基、十三烷基、十四烷基、硬脂基、十八烷基，或月桂基等。
此外，作為形成聚合物(丙烯酸共聚物)之其他單體，無特別限定，可列舉例如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、或巴豆酸等含有羧基的單體，馬來酸酐或衣康酸酐等酸酐單體，(甲基)丙烯酸2-羥乙基、(甲基)丙烯酸2-羥丙基、(甲基)丙烯酸4-羥丁基、(甲基)丙烯酸6-羥己基、(甲基)丙烯酸8-羥辛 基、(甲基)丙烯酸10-羥癸基、(甲基)丙烯酸12-羥十二烷基或(4-羥甲基環己基)-丙烯酸甲酯等含有羥基的單體、苯乙烯磺酸、丙烯磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、丙磺酸(甲基)丙烯酸酯或(甲基)丙烯醯氧基萘磺酸等含有磺酸基之單體，或2-羥乙基丙烯醯基磷酸酯等含有磷酸基之單體。
丙烯酸樹脂之中，較佳係重量平均分子量為1萬~100萬者，更佳係3萬~70萬者。若在上述數值範圍內時，則加熱接合步驟前的接著性，以及加熱接合步驟時的熱分解性優良。又，重量平均分子量是藉由GPC(凝膠滲透層析儀)測量，由聚苯乙烯換算而得之數值。此外，丙烯酸樹脂中，在200℃~400℃熱分解之丙烯酸樹脂為佳。
關於加熱接合用片材3、3’，在大氣環境下從23℃至400℃以10℃/min之昇溫速度進行熱示差熱重量測定時，以下述式得到之重量減少率△W為-9%~-3%為佳，-8%~-3．1%為更佳。
△W(%)={(W400-W23)/W23}×100
(式中，W23為在23℃之加熱接合用片材之重量，W400為在400℃之加熱接合用片材之重量。)
若於前驅層31之燒結時殘存大量之有機成分等則阻礙前驅層31之燒結，所得到的燒結層之強度或熱特性降低。因加熱接合用片材3、3’係上述範圍之加熱時之重量減少率，藉由前驅層轉化為燒結層時之加熱從而充分除去加熱接合用片材含有之有機成分(例如，上述之低沸點黏合劑或熱分解性黏合劑等)或溶劑等。藉此前驅層之燒結之進行變 得充分，可提高接合信賴性。此外，若重量減少率在上述範圍，則厚度之均一性良好。
又，前驅層31，除了前述成分以外，例如，可適當含有可塑劑等。
加熱接合用片材3、3’，可用一般方法製造。例如，製造含有前述各成分的塗漆，以塗漆在基材隔板上塗佈成所定厚度，形成塗佈膜後，乾燥該塗佈膜，即可製造加熱接合用片材3、3’。
作為塗漆所使用的溶劑雖無特別限定，惟較佳係可使前述各成分均一溶解、混練或分散的有機溶劑或醇類溶劑。前述有機溶劑，可列舉例如，為二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯烷酮、丙酮、丁酮、環己酮等酮系溶劑、甲苯、二甲苯等。又，前述醇類溶劑，可列舉為乙二醇、二甘醇、1，2-丙二醇、1，3-丙二醇、1，2-丁二醇、1，3-丁二醇、1，4-丁二醇、2-丁烯-1，4-二醇、1，2，6-己三醇、丙三醇、辛二醇、2-甲基-2，4-戊二醇、松油醇。
塗佈方法無特別限定。作為溶劑塗工方法，可列舉例如，薄膜塗佈機、凹版塗佈機、滾輪式塗佈機、反向式塗佈機、刮刀式塗佈機、管刮刀塗佈機、網版印刷等。其中，以塗佈厚度之均一性較高之觀點，較佳係薄膜塗佈機。又，塗佈膜的乾燥條件無特別限定，例如，可以乾燥溫度70~160℃、乾燥時間1~5分鐘進行。又，塗佈膜乾燥後根據所使用的溶劑種類，會有溶劑無全部氣化而殘留於塗膜中之情形。
前驅層31含有前述低沸點黏合劑時，因應前述乾燥條件，前述低沸點黏合劑之一部分有揮發之情形。因此，因應前述乾燥條件，改 變構成前驅層31之各成分之比例。例如，即使同樣之塗漆所形成之前驅層31，乾燥溫度越高，或乾燥時間越長，佔前驅層31全體之金屬微粒子之含有量、或熱分解性黏合劑之含有量越多。因此，使前驅層31中之金屬微粒子或熱分解性黏合劑之含有量形成所需的量，設定前述乾燥條件為佳。
基材隔板，可使用藉由聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或氟系剥離劑、長鏈烷基丙烯酸酯系剝離劑等之剝離劑進行表面塗佈的塑膠薄膜或紙張。
加熱接合用片材3、3’的製造方法，例如，前述各成分以攪拌器混合，所得之混合物加壓成形製造加熱接合用片材3、3’的方法等亦為合適。攪拌器可列舉為行星攪拌器等。
(切晶帶)
切晶帶11係在基材1上積層黏著劑層2所構成者。
基材1係附切晶帶之加熱接合用片材10、12之強度母體，較佳係具有紫外線透過性者。基材1，可列舉例如，低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、隨機共聚合聚丙烯、嵌段共聚合聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-醋酸乙烯共聚合物、離子鍵聚合物樹脂、乙烯-(甲基)丙烯酸共聚合物、乙烯-(甲基)丙烯酸酯(隨機、交替)共聚合物、乙烯-丁烯共聚合物、乙烯-己烯共聚合物、聚胺酯、聚乙烯對苯二甲酯、聚乙烯萘二甲酯等的聚酯，聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳綸(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚 偏二氯乙烯、纖維素樹脂、矽酮樹脂、金屬(箔)、紙等。
又，基材1之材料，可列舉為前述樹脂之交聯等之聚合物。前述塑膠薄膜，可不做延伸處理，亦可視需要進行一軸或二軸之延伸處理。如藉由延伸處理等賦予熱伸縮性之樹脂片材，在切割後該基材1可藉由熱收縮使黏著劑層2與加熱接合用片材3、3’之接著面積降低，可達到使半導體晶片之回收容易化的目的。
基材1之表面，為了提高與鄰接層之密著性、保持性等，可實施慣用之表面處理，例如，鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化放射線處理等化學性或物理性處理，利用底塗劑(例如，下述黏著物質)所進行之塗佈處理。
基材1之厚度並無特別的限制，可適當地決定，一般為5~200μm左右。
用於黏著劑層2之形成的黏著劑並無特別限制，例如，可使用丙烯酸系黏著劑、橡膠系黏著劑等的一般感壓性接著劑。前述感壓性接著劑，如基於以半導體晶圓或玻璃等怕污染的電子零件之超純水或醇類等有機溶劑之清淨洗淨性等觀點而言，較佳係以丙烯酸系聚合物為基礎聚合物之丙烯酸黏著劑。
作為前述丙烯酸系聚合物，可列舉例如，(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、s-丁酯、t-丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一酯、十二酯、十三酯、十四酯、十六酯、十八酯、二十酯等烷基之碳數1~30，尤其是碳數4~18的直鏈狀或分枝鏈狀之 烷基酯等)，以及(甲基)丙烯酸環烷基酯(例如，環戊酯、環己酯等)之1種或2種以上作為單體成分使用之丙烯酸系聚合物等。又，(甲基)丙烯酸酯即係指丙烯酸酯及/或甲基丙烯酸酯，本發明中之(甲基)，皆為同樣意義。
前述丙烯酸系聚合物，以凝集力、耐熱性等的改良為目的，可視需要含有與前述(甲基)丙烯酸烷酯或環烷酯共聚合之其他單體成分之對應單位。此種單體成分，可列舉例如，丙烯酸、甲基丙烯酸、羧乙基(甲基)丙烯酸酯、羧戊基(甲基)丙烯酸酯、衣康酸、馬來酸、富馬酸、丁烯酸等含羧基之單體；馬來酸酐、衣康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(4-羥基甲基環己基)甲基(甲基)丙烯酸酯等含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、磺酸丙基(甲基)丙烯酸酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體；2-羥乙基丙烯醯基磷酸酯等含磷酸基之單體；丙烯醯胺、丙烯腈等。此等可共聚合之單體成分可使用1種或2種以上。此等可共聚合之單體之使用量在全部單體成分之40重量%以下為佳。
進一步，為使前述丙烯酸系聚合物進行交聯，可視需要包含多官能性單體等作為共聚合用單體成分。此種多官能性單體，可列舉例如，己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲 基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸(甲基)丙烯酸酯等。此等多官能性單體亦可使用1種或2種以上。從黏著特性等之觀點而言，多官能性單體之使用量在全部單體成分之30重量%以下為佳。
前述丙烯酸系聚合物，係可藉由使單一單體或2種以上之單體混合物進行聚合而得。聚合亦可以溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等任一方式進行。以防止對潔淨之被黏物之污染等之觀點而言，以低分子量物質之含量較小為佳。以此點而言，丙烯酸系聚合物之數量平均分子量較佳係10萬以上，更較佳係20萬~300萬左右，特佳係30萬~100萬左右。
此外，由於前述黏著劑中，提高了作為基礎聚合物之丙烯酸系聚合物等之數量平均分子量，因此可適宜地採用外部交聯劑。作為外部交聯方法之具體手段，可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙環化合物、三聚氰胺系交聯劑等所謂交聯劑使其反應之方法。使用外部交聯劑時，其使用量係根據與該應交聯之基礎聚合物之平衡，進一步，可根據作為黏著劑之使用用途來適當決定。一般而言，對於前述基礎聚合物100重量份，以約5重量份以下，進一步以0．1~5重量份配合為佳。進一步，黏著劑視需要，除前述成分外，亦可使用過去習知的各種黏著賦予劑、抗老化劑等之添加劑。
黏著劑層2能以放射線硬化型黏著劑形成。放射線硬化型黏著劑，藉由紫外線等放射線的照射增大交聯程度，從而可容易地使其黏著力降低，藉由僅在圖2所示黏著劑層2之加工黏貼部分之對應部分2a照 射放射線，能使與其他部分2b之黏著力造成差異。
此外，藉由使圖2所示之加熱接合用片材3’同時與放射線硬化型之黏著劑層2硬化，可容易地形成黏著力明顯降低之前述部分2a。由於在硬化、黏著力降低之前述部分2a貼附加熱接合用片材3’，在黏著劑層2之前述部分2a與加熱接合用片材3’之界面，具有在撿拾時容易剝離的性質。另一方面，未照射放射線之部分具有足夠的黏著力，而形成前述部分2b。又，對黏著劑層之放射線照射，亦可在切割後撿拾前進行。
如同前述，圖1所示附切晶帶之加熱接合用片材10之黏著劑層2中，由未硬化之放射線硬化型黏著劑所形成的前述部分2b係與加熱接合用片材3黏著，可確保切割時之保持力。此種放射線硬化型黏著劑可將用以固定晶片狀加工品(半導體晶片等)於基板等被黏物之加熱接合用片材3，在接著‧剝離的平衡良好情形下進行支撐，圖2所示附切晶帶之加熱接合用片材11之黏著劑層2中，前述部分2b可固定晶片環。
放射線硬化型黏著劑係具有碳-碳雙鍵等放射線硬化性之官能基，且可使用表現黏著性之物質，無特別限制。放射線硬化型黏著劑，可例示如，在前述丙烯酸系黏著劑、橡膠系黏著劑等一般感壓性黏著劑上，配合放射線硬化性之單體成分或低聚物成分之添加型放射線硬化型黏著劑。
配合放射線硬化性之單體成分，可列舉例如，胺基甲酸酯低聚物、胺基甲酸(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸 酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1，4-丁二醇二(甲基)丙烯酸酯等。又，放射線硬化性之低聚物成分可列舉胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，其分子量係100~30000左右之範圍者為適當。放射線硬化性之單體成分或低聚物成分之配合量，可因應前述黏著劑層之種類、黏著劑層之黏著力之可降低量，做適當的決定。一般而言，對於構成黏著劑之丙烯酸系聚合物等的基礎聚合物100重量份，例如為5~500重量份、較佳為40~150重量份左右。
此外，放射線硬化型黏著劑，可列舉除前述說明之添加型放射線硬化型黏著劑外，可列舉基礎聚合物，使用內在型之放射線硬化型黏著劑，其係在聚合物側鏈或主鏈中間或主鏈末端具有碳-碳雙鍵者。內在型放射線硬化型黏著劑，因不需含有低分子成分之低聚物或含量不多，故低聚物成分不會隨時間經過在黏著劑中移動，能形成安定層構造之黏著劑層而較佳。
前述具有碳-碳雙鍵之基礎聚合物，可使用具有碳-碳雙鍵且具有黏著性者，並無特別限制。作為此種基礎聚合物，基本骨架係以丙烯酸系聚合物者為佳。作為丙烯酸系聚合物之基本骨架，可列舉前述例示之丙烯酸系聚合物。
前述對丙烯酸系聚合物之碳-碳雙鍵之導入法無特別限制，可採用各種方法，以分子設計之觀點，係以碳-碳雙鍵導入聚合物側鏈為容易。可列舉例如，事先，在丙烯酸系聚合物單體中共聚合具有官能基之單體後，將可與此官能基反應之官能基以及具有碳-碳雙鍵之化合 物，在維持碳-碳雙鍵之放射線硬化性狀態下使其縮合或加成反應之方法。
此等官能基之組合之例，可列舉羧酸基及環氧基、羧酸基和氮丙環基、羥基及異氰酸酯基等。此等官能基之組合中，從追蹤反應之容易度而言，係以羥基和異氰酸酯基之組合較適合。此外，根據此等官能基之組合，若是生成前述具有碳-碳雙鍵之丙烯酸系聚合物之組合時，官能基在丙烯酸系聚合物和前述化合物之任一側皆可；而前述較佳之組合，丙烯酸系聚合物具有羥基，前述化合物具有異氰酸酯基之情形則為合適。此種情形，具有碳-碳雙鍵之異氰酸酯化合物，可列舉例如，甲基丙烯醯異氰酸酯、2-甲基丙烯醯氧乙基異氰酸酯、m-異丙烯-α、α-二甲基芐基異氰酸酯等。此外，作為丙烯酸系聚合物，可使用前述例示之含有羥基之單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二甘醇單乙烯醚之醚系化合物等共聚合之物。
前述內在型之放射線硬化型黏著劑，可單獨使用前述含有碳-碳雙鍵之基礎聚合物(尤其係丙烯酸系聚合物)，也可在不惡化其特性的程度配合前述放射線硬化性之單體成分或低聚物成分等。放射線硬化性之低聚物成分等，對於通常基礎聚合物100重量份係30重量份之範圍內，較佳則係0~10重量份之範圍。
前述放射線硬化型黏著劑，係藉由紫外線等使其硬化時含有光聚合引發劑。作為光聚合引發劑，可列舉例如，4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α，α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己苯酮等之α-酮系化合物；甲氧基苯乙酮、2，2-二甲氧基-2-苯基苯乙酮、2，2-二乙氧基苯 乙酮、2-甲基-1-〔4-(甲硫)-苯基〕-2-嗎啉丙烷-1等苯乙酮系化合物；苯偶姻乙醚、苯偶姻異丙醚、茴香偶姻甲醚等之苯偶姻乙醚系化合物；芐基二甲基縮酮等之縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯甲酮-1，1-丙二酮-2-(o-乙氧羰基)肟等之光活性肟系化合物；二苯甲酮、苯甲醯安息香酸、3，3’-二甲基-4-甲氧基二苯甲酮等之二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2，4-二甲基噻噸酮、異丙基噻噸酮、2，4-二氯噻噸酮、2，4-二乙基噻噸酮、2，4-二異丙基噻噸酮等之噻噸酮系化合物；樟腦醌；鹵化酮；醯基氧化磷；醯基磷酸酯等。光聚合引發劑之配合量，相對於構成黏著劑之丙烯酸系聚合物等之基礎聚合物100重量比，例如為0．05~20重量比左右。
又，放射線硬化型黏著劑，可列舉例如，特開昭60-196956号公報所揭露，有2個以上不飽和鍵之加成聚合化合物，含有具有環氧基之烷氧基矽烷等光聚合性化合物，和羰基化合物、有機硫磺化合物、過氧化物、胺、鎓鹽系化合物等之光聚合引發劑之橡膠系黏著劑或丙烯酸系黏著劑等。
前述放射線硬化型之黏著劑層2中，可視需要，含有藉由放射線照射來著色之化合物。藉由放射線照射，藉由使黏著劑層2含有著色之化合物，可使僅被放射線照射之部分著色。亦即，可使圖1所示加工黏貼部分3a之對應部分2a著色。因此，可以目視直接判斷黏著劑層2是否被放射線照射過，加工黏貼部分3a容易被識別，加工之黏貼更為容易。又，用光感測器等檢測半導體晶片時，其檢測精度提高，半導體之撿取時 不會發生錯誤操作。藉由放射線著色之化合物，在放射線照射前為無色或淡色，藉由放射線照射成為有色之化合物，可列舉例如隱色染料等。藉由放射線著色之化合物之使用比例，可適當設定。
黏著劑層2之厚度，雖無特別限定，但從晶片切斷面之缺陷防止或加熱接合用片材3、3’之固定保持之兼顧性等觀點而言，係以1~50μm左右為佳。較佳為2~30μm，更佳為5~25μm。
本實施例型態之切晶帶11，例如，能以如下製作。首先，基材1，可由過去習知的製膜方法來製膜。該製膜方法，可例示如壓延(calendaring)製膜法、在有機溶劑中之鑄膜(casting)法、在密閉系統之吹膜擠出法、T模擠出法、共擠出法、乾式層壓法等。
接著，基材1上形成塗佈黏著劑組成物溶液之塗佈膜後，該塗佈膜在所定條件下乾燥(視需求加熱交聯)，形成黏著劑層2。塗佈方法無特別限定，可列舉例如，滾輪塗工、網版塗工、凹版塗工等。又，乾燥條件，例如可在乾燥溫度80~150℃、乾燥時間0．5~5分之間之範圍內進行。又，在隔板上塗佈黏著劑組成物形成塗佈膜後，在前述乾燥條件下乾燥塗佈膜而形成黏著劑層2亦可。之後，在基材1上將隔板與黏著劑層2一起貼合。藉此，製作切晶帶11。
附切晶帶之加熱接合用片材10、12，可用一般方法製造。例如，將切晶帶11之黏著劑層2與加熱接合用片材3貼合，可製造附切晶帶之加熱接合用片材10。
附切晶帶之加熱接合用片材10，以隔板覆蓋加熱接合用片材3者為佳。可列舉例如，貼合切晶帶11及加熱接合用片材3後，剝離於加熱接 合用片材3積層之前述基材隔板，於剝離前述基材隔板後之附切晶帶之加熱接合用片材10之加熱接合用片材3之露出面，貼附隔板之方法。亦即，貼合切晶帶11、加熱接合用片材3，及前述隔板之順序積層之形態為佳。
上述實施型態，係說明關於切晶帶及加熱接合用片材所積層之附切晶帶之加熱接合用片材。然而，本發明之加熱接合用片材，亦可提供不貼合切晶帶之狀態。
加熱接合用片材，不貼合切晶帶之形態之情形，夾於2片之隔板形成附有兩面隔板之加熱接合用片材為佳。亦即，第1隔板、加熱接合用片材、及第2隔板之順序所積層而形成附有兩面隔板之加熱接合用片材為佳。
圖3，表示附有兩面隔板之加熱接合用片材之一實施型態之斷面模式圖。
圖3所示之附有兩面隔板之加熱接合用片材30，具有第1隔板32、加熱接合用片材3、及第2隔板34之順序所積層之構成。第1隔板32、及第2隔板34，可使用與前述基材隔板相同之物。
又，加熱接合用片材，形成不貼合切晶帶之形態時，僅加熱接合用片材之一側之面積層隔板之形態亦可。
(半導體裝置之製造方法)
本實施型態中之半導體裝置之製造方法包含：準備前述加熱接合用片材之步驟，及介由前述加熱接合用片材，使半導體晶片在被黏物上加熱接合之加熱接合步驟(以下，亦稱為第1製法)。
此外，本實施型態中半導體裝置之製造方法包含：準備前述所記載之 附切晶帶之加熱接合用片材之步驟，及將前述附切晶帶之加熱接合用片材與半導體晶圓之背面貼合之貼合步驟，及將前述半導體晶圓與前述加熱接合用片材一起切割，形成晶片狀之半導體晶片之切晶步驟，及將前述半導體晶片，從前述附切晶帶之加熱接合用片材，與前述加熱接合用片材一起撿拾之撿拾步驟，及介由前述加熱接合用片材，將前述半導體晶片於被黏物上進行加熱接合之加熱接合步驟(以下，亦稱為第2製法)。
第1製法中半導體裝置之製造方法，相對於第2製法中半導體裝置之製造方法，其使用附切晶帶之加熱接合用片材，係在第1製法中半導體裝置之製造方法中，於以單體使用加熱接合用片材之部分不同，而其他部分相同。第1製法中半導體裝置之製造方法中，準備加熱接合用片材後，若將其與切晶帶進行貼合步驟，其後，可與第2製法中半導體裝置之製造方法相同地進行。因此，以下針對第2製法中半導體裝置之製造方法加以說明。
本實施型態中半導體裝置之製造方法中，首先，準備附切晶帶之加熱接合用片材10、12(準備步驟)。附切晶帶之加熱接合用片材10、12，可在加熱接合用片材3、3’上任意設置之隔板上適宜地剝離，如以下使用。以下，一邊參照圖3使用附切晶帶之加熱接合用片材10之情形為例，加以說明。
首先，附切晶帶之加熱接合用片材10中加熱接合用片材3 之半導體晶圓黏貼部分3a上，壓接半導體晶圓4，將此保持接著並固定(貼合步驟)。本步驟，是用壓著滾輪等之按壓方法一邊按壓一邊進行。裝載時之黏貼溫度並無特別限定，例如在23~90℃之範圍內為佳。
半導體晶圓4，於一側之面形成電極墊，於其他的面(以下，稱作背面)之最表面形成銀薄膜為佳。前述銀薄膜之厚度，可列舉例如，10nm~1000nm。此外，於半導體晶圓4與前述銀薄膜之間，進一步，亦可形成鈦薄膜。前述鈦薄膜之厚度，可列舉例如，10nm~1000nm。若形成前述銀薄膜，則後述之加熱接合步驟中，半導體晶片5與加熱接合用片材3可強固地加熱接合。此外，若形成前述鈦薄膜則電極之信賴性提升。前述銀薄膜、及前述鈦薄膜，例如，可藉由氣相沉積形成。
接著，進行半導體晶圓4之切割(切晶步驟)。藉此，切斷並單片化半導體晶圓4成所定之尺寸，從而製造半導體晶片5。切晶方法雖無特別限定，例如可從半導體晶圓4之迴路面側，按照普通方法進行。此外，本步驟，例如可採用附切晶帶之加熱接合用片材10，來進行切割之稱作全切之切斷方式。本步驟所用的切晶裝置並無特別限定，可使用過去習知之物。此外，由於半導體晶圓4，係藉由切晶帶之加熱接合用片材10接著固定，故可抑制晶片缺陷或晶片飛散的同時，亦可抑制半導體晶圓4的破損。
接著，為剝離在附切晶帶之加熱接合用片材10上接著固定之半導體晶片5，進行半導體晶片5之撿拾(撿拾步驟)。撿拾之方法無特別限定，可採用過去各種習知的方法。可列舉例如將個別半導體晶片5從 附切晶帶之加熱接合用片材10側藉由針突起，再將突起之半導體晶片5經由撿拾裝置撿拾之方法等。
作為撿拾條件，以防止破片之觀點，針的突起速度在5~100mm/秒為佳，在5~10mm/秒更佳。
此處之撿拾，係黏著劑層2為紫外線硬化型之情形，其係在該黏著劑層2照射紫外線後進行。藉此，對於黏著劑層2之加熱接合用片材3之黏著力降低，使半導體晶片5之剝離變得容易。其結果，可在撿拾半導體晶片5時不使其受損。紫外線照射時之照射強度、照射時間等之條件並無特別限定，可視需要適當設定。此外，紫外線照射所使用之光源，可使用習知之物。此外，黏著劑層事先照射紫外線使其硬化，貼合此硬化之黏著劑層與加熱接合用片材時，並不需紫外線照射。
接著，撿拾之半導體晶片5，介由加熱接合用片材3，而黏晶(加熱接合)於被黏物6(加熱接合步驟)。被黏物6，可列舉有導線架、TAB薄膜、基板或另外製作之半導體晶片等。被黏物6，例如，可為容易變形之變形型被黏物，亦可為不易變形之非變形型被黏物(半導體晶圓等)。
前述導線架，可列舉Cu導線架、42Alloy導線架等之金屬導線架。又，前述基板，可使用過去習知之物。可列舉例如玻璃環氧基、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等構成之有機基板。其中，若使用金屬導線架，可藉由加熱接合與金屬微粒子一體化。又，前述基板係在陶瓷板等之絕緣基板上，例如積層銅電路基板之絕緣電路基板。若使用絕緣電路基板，例如，可製造進行電力的控制或供給之電力半導體裝置。
前述加熱接合步驟，藉由加熱燒結金屬微粒子的同時，可視需要熱分解熱分解性黏合劑。此外，揮發藉由乾燥步驟無法完全揮發所殘留之低沸點黏合劑。加熱溫度為，以180~400℃為佳、190~370℃較佳、在200~350℃進行更佳。此外，加熱時間，以0．3~300分為佳、0．5~240分較佳、在1~180分進行更佳。又加熱接合，亦可在加壓條件下進行。加壓條件，以1~500kg/cm2的範圍內為佳、5~400kg/cm2的範圍內更佳。在加壓下之加熱接合，例如，可以如倒裝焊接機之加熱與加壓可同時進行之裝置來進行。此外，平行平板加壓亦可。
接著，可視需要，如圖4所示，在被黏物6之端子部(內引線)之前端與半導體晶片5上之電極墊(無圖示)以焊接導線7做電氣連接(導線焊接步驟)。前述焊接導線7，例如，可使用金線、鋁線或銅線等。進行導線焊接時之溫度，在23~300℃，較佳係在23~250℃之範圍內進行。此外，其加熱時間為數秒~數分內進行。結線為在前述溫度範圍內之加熱狀態下，藉由超音波之振動能量與藉由施加電壓之壓接能量之併用下進行。
接著，可視需要，如圖4所示，藉由密封樹脂8密封半導體晶片5(密封步驟)。本步驟係為保護在被黏物6所搭載之半導體晶片5或焊接導線7而進行。本步驟可藉由密封用樹脂在模具成型來進行。密封樹脂8，例如使用環氧樹脂。樹脂密封時之加熱溫度，通常在175℃、60~90秒之間進行，但本發明並無限定於此，例如可在165~185℃、數分內處理。藉此，使密封樹脂8硬化。又，本密封步驟，亦可採用在片 材狀之密封用片材嵌入半導體晶片5之方法(例如，參照特開2013-7028号公報)。此外，除了藉由模具之密封樹脂之成型以外，在箱型容器流入矽酮凝膠之凝膠密封型亦可。
接著，可視需要進行加熱，使在前述密封步驟硬化不足之密封樹脂8完全硬化(後硬化步驟)。本步驟中之加熱溫度，因密封樹脂之種類而異，例如在165~185℃之範圍內，加熱時間為0．5~8小時左右。
又，本發明之加熱接合用片材、及附切晶帶之加熱接合用片材，亦可適合於積層有複數半導體晶片且立體實裝之情形。此時，可於半導體晶片間積層加熱接合片材及隔離層，亦可不積層隔離層，而僅在半導體晶片間積層加熱接合用片材，可視製造條件或用途等作適當變更。
此外，本發明之加熱接合用片材，及附切晶帶之加熱接合用片材，不限定於上述例示之用途，可利用2者於加熱接合。
《第2實施型態》
第1實施型態之加熱接合用片材，藉由規定由加熱燒結之前驅層之最大厚度及最小厚度之平均厚度之比例以擔保厚度均一性，而將此取代，或與此同時，從表面粗糙度之觀點亦可擔保厚度均一性。以下，關於第2實施型態之加熱接合用片材，僅說明與第1實施型態相異之處。
本實施型態之加熱接合用片材，具有藉由加熱形成燒結層之前驅層，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視 野測量時之表面粗度Sa係2μm以下。
該當加熱接合用片材，由於具有藉由加熱形成燒結層之前驅層，藉由施予加熱處理得到燒結層，因此用於作業環境為高溫之電力半導體裝置等之接合亦可發揮高的接合信賴性。此外，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視野測量時之表面粗度Sa係2μm以下。藉此，抑制在厚度方向之凹凸，而厚度之均一性為高等級而被滿足，因此，可防止接合不均，提升高溫接合信賴性。
前述表面粗度為2μm以下即可，較佳為1．5μm以下，更佳為1．0μm以下。
【實施例】
以下，關於本發明所使用之實施例做詳細的說明，但本發明在不超過其主旨之情況下，並不限於以下之實施例。
<實施例1>
於攪拌用容器，加入含有金屬微粒子糊膏之應用奈米粒子研究所製的ANP-1(分散有奈米尺寸的銀微粒子的糊膏)黏度適當調整者100重量份、熱分解性黏合物A之丙烯酸樹脂(藤倉化成公司製、「MM-2002-1」(在23℃固態)1重量份及溶劑(甲乙酮)35重量份，使用混合攪拌器(KEYENCE製HM-500)以攪拌模式3分鐘攪拌、混合。所得到之塗漆，在離型處理薄膜(三菱樹脂(株)製的MRA50)上塗佈，塗佈膜在150℃乾燥5分鐘，得到厚度40μm之加熱接合用片材。
<實施例2>
在實施例1得到之加熱接合用片材重疊5枚，以層壓機在80℃貼合，得到厚度200μm之加熱接合用片材。
<實施例3>
於攪拌用容器，加入含有金屬微粒子糊膏之應用奈米粒子研究所製的ANP-1(分散有奈米尺寸的銀微粒子的糊膏)黏度適當調整者100重量份、熱分解性黏合物B之聚碳酸丙烯酯樹脂(Empower公司製之QPAC40」(在23℃固態)1重量份及溶劑(甲乙酮)35重量份，使用混合攪拌器(KEYENCE製HM-500)以攪拌模式3分鐘攪拌、混合。所得到之塗漆，在離型處理薄膜(三菱樹脂(株)製的MRA50)上塗佈，塗佈膜在150℃乾燥5分鐘，得到厚度40μm之加熱接合用片材。
<實施例4>
在實施例3得到之加熱接合用片材重疊5枚，以層壓機在80℃貼合，得到厚度200μm之加熱接合用片材。
<比較例1>
與實施例1相同之含有金屬微粒子糊膏直接使用。
《評價》
以下之項目，評價實施例及比較例之樣品。個別之結果如表1所示。
(厚度評價(加熱接合用片材))
對於實施例1~4及比較例2之加熱接合用片材(以下，亦稱作「片材」)，於背面金屬(Ti/Ag)矽晶圓(10cm×10cm)之背面側貼附1cm×10cm之片材。使用共聚焦顯微鏡(LaserTec(株) 製、「H300」)，對於貼附片材之矽晶圓背面(矽晶圓部分及片材部分)以下述條件進行非接觸測量，求得高度。
<非接觸測量條件>
對物透鏡：10倍
掃描時間：60秒
分解能：0．03μm
藉由片材高度h1減矽晶圓高度h2，得到片材厚度Ts(=h1-h2)。測定位置係1cm×10cm之區域分成10等份之1cm×1cm之區域之中心部，合計測定10點，10點之平均作為平均厚度(μm)，最大值(最大厚度)及最小值(最小厚度)在平均厚度之±20%以內之範圍內時為「○」、±20%之範圍外時為「×」做評價。從最大厚度或最小厚度之平均厚度之偏差之比例求得偏差率(%)。
(厚度評價(含有金屬微粒子糊膏))
對於比較例1之含有金屬微粒子糊膏(以下，稱作「糊膏」)，於背面金屬(Ti/Ag)矽晶圓之背面側，2條長12cm之黏著膠帶(No．31B、寬20mm、總厚0．05mm(=50μm))間隔1cm貼附。藉由對黏著膠帶之間露出之矽晶圓部分塗佈糊膏，在130℃乾燥1分鐘除去溶劑，形成乾燥糊膏膜。接著，剝去黏著膠帶後，使用共聚焦顯微鏡(LaserTec(株)製、「H300」)，對於形成乾燥糊膏膜之矽晶圓背面(矽晶圓部分及乾燥糊膏膜部分)，與測量片材時相同條件進行非接觸測量，求得高度。
藉由由乾燥糊膏膜高h1′減去矽晶圓高h2′，得到乾燥糊 膏膜厚Tp(=h1′-h2′)。測定位置係將1cm×12cm之區域分成12等份，除去兩端的1cm×1cm之區域以1cm×1cm之區域之中心部，測定合計10點。10點之平均作為平均厚度(μm)，最大值(最大厚度)及最小值(最小厚度)在平均厚度之±20%以內之範圍內時為「○」、±20%之範圍外時為「×」做評價。從最大厚度或最小厚度之平均厚度之偏差之比例求得偏差率(%)。
(表面粗度Sa評價(片材))
以80℃之層壓機，於背面金屬(Ti/Ag)矽晶圓(5cm×5cm)之背面側，以1cm見方以上之尺寸貼附片材。使用共聚焦顯微鏡(LaserTec(株)製、「H300」)，對片材表面進行非接觸測量，測定表面粗度Sa。
<非接觸測量條件>
對物透鏡：10倍
掃描時間：60秒
分解能：0．03μm
片材之中心部之200μm×200μm之區域作為測定視野，測定在其區域之表面粗度Sa。表面粗度Sa在2μm以下時為「○」、超過2μm時為「×」做評價。
(表面粗度Sa評價(糊膏))
於背面金屬(Ti/Ag)矽晶圓(5cm×5cm)之背面側，塗佈糊膏形成1cm見方以上之尺寸且乾燥後之厚度50μm。多餘的溶劑藉由在130℃乾燥1分鐘除去，形成乾燥糊膏膜。使用共聚焦顯微鏡(L aserTec(株)製、「H300」)，對於乾燥糊膏膜表面進行與片材相同條件之非接觸測量，測定表面粗度Sa。
片材之中心部之200μm×200μm之區域作為測定視野，測定在其區域之表面粗度Sa。表面粗度Sa在2μm以下時為「○」、超過2μm時為「×」做評價。
(接合不均評價(片材))
於5mm×5mm之背面金屬(Ti/Ag)矽晶圓之整個背面在80℃貼附片材，此附片材之晶片配置於鍍銀銅板(20mm×20mm，厚3mm)上。以燒結裝置((伯東)製、「HTM-3000」)，在300℃維持2．5分、10MPa之壓力負荷並加熱片材，藉由將此形成燒結層，晶片及鍍銀銅板介在燒結層接合。對接合之5個樣品，以SAT(超音波影像装置、日立建機Finetech製、「FineSAT II」)之反射模式(傳感型態：PQ-50-13：WD、頻率：50MHz)觀察，確認晶片及鍍銀銅板之間有無剝離。求得5個樣品之個別對接合面整體剝離之部分之面積比例，其平均值作為平均剝離面積率(%)。平均剝離面積率在10%以下時為「○」，超過10%時為「×」做評價。
(接合不均評價(糊膏))
於5mm×5mm之背面金屬(Ti/Ag)矽晶圓之整個背面塗佈糊膏形成厚度50μm。多餘的溶劑藉由在130℃乾燥1分鐘除去，形成乾燥糊膏膜。該附乾燥糊膏膜之晶片配置於鍍銀銅板(20mm×20mm，厚3mm)上。以燒結裝置((伯東)製、「HTM-3000」)，在300℃維持2．5分、10MPa之壓力負荷並接合介在乾燥糊膏膜之 晶片及鍍銀銅板。對接合之5個樣品，以SAT(超音波影像装置、日立建機Finetech製、「FineSAT II」)之反射模式(傳感型態：PQ-50-13：WD，頻率：50MHz)觀察，確認晶片及鍍銀銅板之間有無剝離。求得5個樣品之個別對接合面整體剝離之部分之面積比例，其平均值作為平均剝離面積率(%)。平均剝離面積率在10%以下時為「○」，超過10%時為「×」做評價。
圖5，表示使用實施例1之片材及比較例1之糊膏個別製作之樣品之SAT觀察圖像。圖像中之白色部分為剝離之位置。
(信賴性評價-剩餘接合面積率)
與上述接合不均評價之相同方法，製作實施例及比較例評價用樣品。
接著，將評價用樣品放入冷熱衝擊試驗機(ESPEC公司製之TSE-103ES)，給予100循環-40℃~200℃之冷熱衝擊(-40℃及200℃之間之昇溫及降溫之時間約10分鐘)。又，此時，在-40℃及200℃個別維持15分鐘。
100循環後，使用超音波影像裝置〔SAT〕(日立建機Finetech製
Figure 105131683-A0202-12-0035-8
FineSAT II)，確認矽晶片與銅板於燒結層接合之部分，進行攝影。使用傳感器(探測器)，PQ-50-13：WD〔頻率50MHz〕。
求得於得到的像中接合而剩餘部分之面積(剩餘面積)，算出相對於全體面積之剩餘面積之比例(剩餘接合面積率)。此外，剩餘接合面積率在50%以上時為○、低於50%時為×做評價。結果表1所示。又，與接合不均評價之SAT圖像觀察相同，圖像中之白色部分為剝離之位置 (未圖示)。
(重量減少率之評價(片材))
從製作之加熱接合用片材切出約10mg之5mm×5mm之尺寸，作為測定樣品。對於此測定樣品之熱示差熱重量測定在從23℃至400℃以10℃/min之昇溫速度進行，讀取23℃之加熱接合用片材之重量W23及400℃之加熱接合用片材之重量W400。以下述式所得的重量減少率△W在-9%~-3%之範圍內時為「○」、小於-9%或大於-3%時為「×」做評價。
△W(%)={(W400-W23)/W23}×100
(重量減少率之評價(糊膏))
測定樣品，除了使用含有金屬微粒子之糊膏塗佈於離型處理薄膜(三菱樹脂(株)製的MRA50)上所形成之厚度40μm之塗佈液膜以外，與前述片材之重量減少率之測定相同順序求得。
Figure 105131683-A0202-12-0036-1
Figure 105131683-A0202-12-0037-2
實施例1~4，厚度評價及表面粗度Sa皆良好，伴隨於此，接合不均評價及信賴性評價之任一者皆為良好的結果。此外，重量減少率之評價亦良好，當設定燒結步驟藉由達400℃之加熱可推測有機成分幾乎除去。另一方面，比較例1，厚度評價及表面粗度Sa皆在範圍外，因此接合不均評價及信賴性評價之任一者皆差的結果。此結果推測是由於厚度不均而剝離面積增大為主要原因。此外，可想而知亦影響到重量減少率大、厚度均一性降低。
1‧‧‧基材
2‧‧‧黏著劑層
3‧‧‧加熱接合用片材
4‧‧‧半導體晶圓
10‧‧‧附有切晶帶之加熱接合用片材
11‧‧‧切晶帶
31‧‧‧藉由加熱形成燒結層之層

Claims (5)

  1. 一種加熱接合用片材，其特徵係具有藉由加熱形成燒結層之前驅層，前述前驅層係含有在23℃為固態之熱分解性黏合劑，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之最大厚度及最小厚度係在前述平均厚度之±20%之範圍內。
  2. 一種加熱接合用片材，其特徵係具有藉由加熱形成燒結層之前驅層，前述前驅層係含有在23℃為固態之熱分解性黏合劑，前述前驅層之平均厚度係5μm~200μm，且前述前驅層之表面藉由共聚焦顯微鏡在200μm×200μm之視野測量時之表面粗度Sa係2μm以下。
  3. 如申請專利範圍第1或2項所記載之加熱接合用片材，其中，在大氣環境下從23℃至400℃以10℃/min之昇溫速度進行熱示差熱重量測定時，以下述式得到之重量減少率△W為-9%~-3%；△W(%)={(W400-W23)/W23}×100(式中，W23為在23℃之加熱接合用片材之重量，W400為在400℃之加熱接合用片材之重量。)
  4. 如申請專利範圍第1或2項所記載之加熱接合用片材，其中，前述前驅層含有金屬微粒子；前述金屬微粒子選自銀、銅、氧化銀、氧化銅所成群中之至少1種。
  5. 一種附切晶帶之加熱接合用片材，其特徵係其具有 切晶帶，及積層於前述切晶帶上如申請專利範圍第1至4項中任一項所記載之加熱接合用片材。
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