TW201448066A - 補強片材及二次安裝半導體裝置之製造方法 - Google Patents

補強片材及二次安裝半導體裝置之製造方法 Download PDF

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Publication number
TW201448066A
TW201448066A TW103109164A TW103109164A TW201448066A TW 201448066 A TW201448066 A TW 201448066A TW 103109164 A TW103109164 A TW 103109164A TW 103109164 A TW103109164 A TW 103109164A TW 201448066 A TW201448066 A TW 201448066A
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Taiwan
Prior art keywords
semiconductor device
layer
adhesive layer
thermosetting resin
reinforcing sheet
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TW103109164A
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English (en)
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TWI642120B (zh
Inventor
Naohide Takamoto
Kosuke Morita
Hiroyuki Senzai
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Nitto Denko Corp
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Publication of TW201448066A publication Critical patent/TW201448066A/zh
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Abstract

本發明提供一種可製作耐衝擊性優異之二次安裝半導體裝置，並且可實現二次安裝步驟之效率化之補強片材及使用其之二次安裝半導體裝置之製造方法。本發明係用以補強於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板之二次安裝半導體裝置的補強片材，且依序具備基材層、黏著劑層及熱硬化性樹脂層，上述黏著劑層之破斷強度為0.07 MPa以上，且60~100℃下之熔融黏度為4000 Pa‧s以下。

Description

補強片材及二次安裝半導體裝置之製造方法
本發明係關於一種補強片材及二次安裝半導體裝置之製造方法。
因電子機器之小型、薄型化所帶來之高密度安裝之要求尤其於行動電話等攜帶用電子機器用途中急遽地增加。因此，於半導體封裝體中，代替先前之插件型，適於高密度安裝之表面安裝型成為主流。關於該表面安裝型，將樹脂密封有半導體元件之半導體裝置經由焊料球等連接用端子而直接焊接於二次安裝用之印刷基板等。
此處，於攜帶用電子機器用途中施加掉落衝擊之情況較多，故而要求耐衝擊性。對此，於如上所述之二次安裝中，為了確保一次安裝半導體裝置與配線基板之間之連接可靠性，而進行向一次安裝半導體裝置與基板之間之空間的密封樹脂之填充。作為此種密封樹脂，雖然廣泛使用液狀之密封樹脂，但由於為液狀，故而難以調整密封樹脂之注入位置或注入量，或焊料球與基板之間之間隔變寬而二次安裝用之相對大之焊料球之注入量成為大量。因此，提出有使用熱硬化樹脂片材對焊料球與二次安裝基板之連接部附近之區域而非半導體裝置與基板之間之整個空間進行集中性地補強之技術(專利文獻1)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本專利第4699189號
然而，判明因施加於攜帶用電子機器之掉落衝擊等，而不僅於焊料連接部，於焊料球之一次安裝基板側之根部部分亦產生裂痕，有引起連接不良等功能障礙之情況，而要求針對此種情況之應對。又，於上述技術中，於一個或複數個半導體裝置與熱硬化樹脂片材之積層體之背面研削或切割等加工中，必須採用另外之構件或步驟，對於經二次安裝之半導體裝置之製造步驟整體之效率化，有改善之餘地。
本發明之目的在於提供一種可製作耐衝擊性優異之二次安裝半導體裝置，並且可實現二次安裝步驟之效率化之補強片材及使用其之二次安裝半導體裝置之製造方法。
因此，本發明者等人將背面研削用之背面研磨膠帶或切割用之切割膠帶等先前之加工用膠帶與特定之熱硬化樹脂片材組合而製成突起電極補強用之片材，而補強突起電極之一次安裝基板側之根部部分(以下，亦簡稱為「根部部分」)，並且嘗試包含各加工之製造步驟之效率化。然而，判明關於此種片材，突起電極之頂端之露出變得不充分而產生連接不良，或於加工用膠帶之剝離後產生突起電極之污染。
本發明者等人進行銳意研究，結果發現：藉由採用下述構成，可達成上述目的，從而完成本發明。
即，本發明係用以補強於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板之二次安裝半導體裝置之補強片材，且依序具備基材層、黏著劑層及熱硬化性樹脂層，上述黏著劑層之破斷強度為0.07MPa以上，且60~100℃下之熔融黏度為4000Pa‧s以下。
於該補強片材中，具備具有基材層及黏著劑層之加工用膠帶、及可補強突起電極之根部部分之熱硬化性樹脂層，故而可補強突起電極之根部部分，並且連續地進行背面研削或切割等加工，而可製作耐衝擊性優異之二次安裝半導體裝置，並且可容易地實現其製造步驟之效率化。又，將黏著劑層之破斷強度設為0.07MPa以上，故而於一次安裝半導體裝置之自加工用膠帶之剝離時亦可抑制黏著劑層之破斷，可防止於突起電極之糊劑殘留。進而，將黏著劑層之60~100℃下之熔融黏度設為4000Pa‧s以下，故而於補強片材與一次安裝半導體裝置之於加熱下之貼合時，可使突起電極容易地進入至黏著劑層，可容易地進行側視突起電極時之熱硬化性樹脂層之配置位置之微調整。其結果為，即便變更突起電極之形狀或尺寸亦可調整其進入量，故而可應對各種突起電極之根部部分補強。再者，破斷強度及熔融黏度之測定方法係根據實施例之記載。
於該補強片材中，上述熱硬化性樹脂層之厚度較佳為上述突起電極之高度之50%以下。藉此，可使突起電極超出熱硬化性樹脂層而達到黏著劑層。其結果為，於其後之加工用膠帶之剝離時，突起電極自熱硬化性樹脂層露出，故而可達成與配線基板之良好之電性連接。同時，突起電極之自熱硬化性樹脂層之露出量之調整變得容易，故而可簡便地調整根部部分之補強程度。
於該補強片材中，較佳為上述熱硬化性樹脂層與上述黏著劑層之間之剝離力為0.02N/20mm以上且0.3N/20mm以下。藉由設為此種剝離力，可平衡良好地兼具一次安裝半導體裝置之加工時之保持力與自加工用膠帶之剝離時之剝離性。
該補強片材較佳為於上述基材層與上述黏著劑層之間進而具備包含熱塑性樹脂之中間層。若突起電極之尺寸增大，則於貼合補強片材時突起電極進入，故而必須分別增厚熱硬化性樹脂層及黏著劑層。 然而，於增厚各層之情形時，突起電極之根部區域之集中性之補強變得困難，或產生黏著劑層之破斷強度之降低。對此，藉由設置包含熱塑性樹脂之中間層，而突起電極向藉由貼合時之加熱而軟化之中間層之進入變得容易，故而可降低熱硬化性樹脂層及黏著劑層之厚度之變更之必要性。
於本發明中，亦包含二次安裝半導體裝置之製造方法，其係使於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板者，且包括： (A)於上述一次安裝半導體裝置之第1主面貼合該補強片材之步驟；(B)於藉由上述補強片材之保持下，進行對上述一次安裝半導體裝置之加工之步驟；(C)將上述補強片材中之上述熱硬化性樹脂層與上述黏著劑層剝離而獲得上述附熱硬化性樹脂層之一次安裝半導體裝置之步驟；及(D)使上述附熱硬化性樹脂層之一次安裝半導體裝置經由上述突起電極而電性連接於配線基板之步驟。
藉由該製造方法，可將用以補強突起電極之根部部分之熱硬化性樹脂層賦予至一次安裝半導體裝置，且於藉由補強片材之保持下，進行對一次安裝半導體裝置之各種加工，故而可高效率地製造耐衝擊性優異之二次安裝半導體裝置。
於該製造方法之步驟(A)中，較佳為以上述突起電極達到上述黏著劑層之方式貼合上述補強片材。藉此，可確保突起電極與配線基板之電性連接，可提高連接可靠性。
於該製造方法中，亦可於將上述黏著劑層製成放射線硬化型黏著劑層，對該放射線硬化型黏著劑層照射放射線後而進行步驟(B)。僅藉由對放射線照射型之黏著劑層照射放射線，而可降低熱硬化性樹 脂層與黏著劑層之間之剝離力，可容易地剝離熱硬化性樹脂層。
1‧‧‧背面研削用膠帶
1a、11a、21a、31a‧‧‧基材層
1b、11b、21b、31b‧‧‧黏著劑層
2、42‧‧‧熱硬化性樹脂層
3‧‧‧中介層
3a‧‧‧中介層之第1主面
3b‧‧‧中介層之與第1主面相反側之第2主面
4、44‧‧‧突起電極
5、45‧‧‧半導體晶片(半導體元件)
6、46‧‧‧密封樹脂
8、38‧‧‧補強片材
11、21‧‧‧切割膠帶
10‧‧‧一次安裝半導體裝置
20、40‧‧‧二次安裝半導體裝置
23、43‧‧‧配線基板
31c‧‧‧中間層
47‧‧‧密封樹脂層
49‧‧‧導電性支柱
圖1係表示本發明之一實施形態之補強片材之剖面模式圖。
圖2A係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖2B係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖2C係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖2D係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖2E係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖2F係表示本發明之一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖3A係表示本發明之另一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖3B係表示本發明之另一實施形態之半導體裝置之製造步驟之一步驟的剖面模式圖。
圖4係表示本發明之另一實施形態之補強片材之剖面模式圖。
圖5係表示本發明之另一實施形態之二次安裝半導體裝置之剖面模式圖。
本發明係用以補強於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板之二次安裝半導體裝置之補強片材，且依序具備基材層、黏著劑層及熱硬化性樹脂層，上述黏 著劑層之破斷強度為0.07MPa以上，且60~100℃下之熔融黏度為4000Pa‧s以下。
又，本發明係一種二次安裝半導體裝置之製造方法，其係使於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板者，且包括：(A)於上述一次安裝半導體裝置之第1主面貼合該補強片材之步驟；(B)於藉由上述補強片材之保持下，進行對上述一次安裝半導體裝置之加工之步驟；(C)將上述補強片材中之上述熱硬化性樹脂層與上述黏著劑層剝離而獲得上述附熱硬化性樹脂層之一次安裝半導體裝置之步驟；及(D)使上述附熱硬化性樹脂層之一次安裝半導體裝置經由上述突起電極而電性連接於配線基板之步驟。以下，對於本發明之一實施形態之第1實施形態，根據二次安裝半導體裝置之製造方法進行說明。
<第1實施形態>
於第1實施形態中，對於使用將半導體晶片覆晶安裝於中介層之封裝體作為一次安裝半導體裝置，進行背面研削作為一次安裝半導體裝置之加工之態樣進行說明。
[步驟(A)]
於步驟(A)中，於一次安裝半導體裝置之第1主面貼合特定之補強片材。以下，首先對於補強片材進行說明，其後，對於利用該補強片材之二次安裝半導體裝置之製造步驟進行說明。
(補強片材)
如圖1所示，補強片材8依序具備：基材層1a、黏著劑層1b及熱硬化性樹脂層2。於本實施形態中，基材層1a及黏著劑層1b構成背面研削用膠帶1。再者，熱硬化性樹脂層2如圖1所示，只要以與一次安裝半導體裝置10(參照圖2A)之樹脂密封集合體之貼合而言充分之尺寸設置即可，亦可積層於背面研削用膠帶1之整個面。
(背面研削用膠帶)
背面研削用膠帶1具備：基材層1a；積層於基材層1a上之黏著劑層1b。再者，熱硬化性樹脂層2係積層於黏著劑層1b上。
(基材層)
上述基材層1a係成為補強片材8之強度母體者。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳香族聚醯胺、聚苯硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素系樹脂、聚矽氧樹脂、金屬(箔)、紙等。於黏著劑層1b為紫外線硬化型之情形時，基材層1a較佳為對紫外線具有透射性者。
又，作為基材層1a之材料，可列舉：上述樹脂之交聯體等聚合物。上述塑膠膜可以無延伸使用，亦可視需要使用實施有單軸或雙軸之延伸處理者。
為了提高與鄰接之層之密接性、保持性等，可對基材層1a之表面實施慣用之表面處理，例如，鉻酸處理、臭氧曝露、火焰曝露、高壓電擊曝露、離子化放射線處理等化學或物理處理、藉由底塗劑(例如，下述黏著物質)之塗佈處理。
上述基材層1a可適當選擇同種或不同種者而使用，可視需要使用摻和有複數種者。又，為了對基材層1a賦予抗靜電性，可於上述基材層1a上設置包含金屬、合金、該等之氧化物等之厚度為30~500Å左右之導電性物質之蒸鍍層。亦可藉由於基材層添加抗靜電劑，而賦予 抗靜電性。基材層1a亦可為單層或兩種以上之複層。
基材層1a之厚度可適當地決定，一般而言，為5μm以上且200μm以下左右，較佳為35μm以上且120μm以下。
再者，亦可於基材層1a中，於無損本發明之效果等之範圍內，包含各種添加劑(例如，著色劑、填充劑、塑化劑、抗老化劑、抗氧化劑、界面活性劑、阻燃劑)。
(黏著劑層)
只要黏著劑層1b之破斷強度為0.07MPa以上即可，較佳為0.08MPa以上，更佳為0.1MPa以上。由於將黏著劑層1b之破斷強度設為0.07MPa以上，故而於一次安裝半導體裝置之自背面研削用膠帶之剝離時亦可抑制黏著劑層之破斷，可防止於突起電極或熱硬化性樹脂層之糊劑殘留。破斷強度之上限值並無特別限定，但就對凸塊之凹凸之追隨性之觀點而言，較佳為2.0MPa以下，更佳為1.0MPa以下。再者，於黏著劑層1b為放射線硬化型之黏著劑層(下述)之情形時，使硬化後之破斷強度滿足上述範圍即可。
又，黏著劑層1b之60~100℃下之熔融黏度為4000Pa‧s以下即可，較佳為3500Pa‧s以下，更佳為3000Pa‧s以下。藉此，可於補強片材8與一次安裝半導體裝置10之於加熱下之貼合時，使突起電極容易地進入至黏著劑層，可容易地進行側視突起電極時之熱硬化性樹脂層之配置位置之微調整。其結果為，即便變更突起電極之形狀或尺寸亦可調整其進入量，故而可應對各種突起電極之根部部分補強。上述熔融黏度之下限值並無特別限定，但就防止貼合時之黏著劑層之溢出或於突起電極之糊劑殘留之觀點而言，較佳為100Pa‧s以上，更佳為500Pa‧s以上。
用以形成黏著劑層1b之黏著劑只要為於背面研削時經由熱硬化性樹脂層而將一次安裝半導體裝置牢固地保持，並且於背面研削後將 附熱硬化性樹脂層之一次安裝半導體裝置向切割膠帶轉移時，能夠可剝離地控制附熱硬化性樹脂層之一次安裝半導體裝置者，則並無特別限制。可使用例如丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性接著劑。作為上述感壓性接著劑，就避忌半導體晶圓或玻璃等之污染之電子零件之藉由超純水或醇等有機溶劑之潔淨洗淨性等之方面而言，較佳為以丙烯酸系聚合物作為基礎聚合物之丙烯酸系黏著劑。
作為上述丙烯酸系聚合物，可列舉：使用丙烯酸酯作為主單體成分者。作為上述丙烯酸酯，例如可列舉：使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基之碳數1~30、尤其是碳數4~18之直鏈狀或支鏈狀之烷基酯等)及(甲基)丙烯酸環烷基酯(例如，環戊酯、環己酯等)之一種或兩種以上作為單體成分之丙烯酸系聚合物等。再者，所謂(甲基)丙烯酸酯，意指丙烯酸酯及/或甲基丙烯酸酯，所謂本發明之(甲基)全部為相同之含義。
以凝集力、耐熱性等之改質為目的，上述丙烯酸系聚合物亦可視需要含有對應於可與上述(甲基)丙烯酸烷基酯或環烷基酯共聚之其他單體成分之單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含羧基之單體；順丁烯二酸酐、伊康酸酐等酸酐單體；(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯、(甲基)丙烯酸(4-羥基甲基環己基)甲酯等含羥基之單體；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙 烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體；丙烯醯基磷酸2-羥基乙酯等含磷酸基之單體；丙烯醯胺、丙烯腈等。該等可共聚之單體成分可使用一種或兩種以上。該等可共聚之單體之使用量較佳為全部單體成分之40重量%以下。
進而，為了使上述丙烯酸系聚合物交聯，亦可含有多官能性單體等作為視需要之共聚用單體成分。作為此種多官能性單體，例如可列舉：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、(甲基)丙烯酸胺基甲酸酯等。該等多官能性單體亦可使用一種或兩種以上。多官能性單體之使用量就黏著特性等方面而言，較佳為全部單體成分之30重量%以下。
上述丙烯酸系聚合物可藉由對單一單體或兩種以上之單體混合物付之聚合而獲得。聚合可利用溶液聚合、乳化聚合、塊狀聚合、懸浮聚合等中之任一方式進行。就防止對潔淨之被接著體之污染等層面而言，較佳為低分子量物質之含量較小。就該方面而言，丙烯酸系聚合物之數量平均分子量較佳為30萬以上，進而較佳為40萬~300萬左右。
又，為了提高作為基礎聚合物之丙烯酸系聚合物等之數量平均分子量，亦可於上述黏著劑中適當採用外部交聯劑。作為外部交聯方法之具體之方法，可列舉：添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂之交聯劑進行反應之方法。於使用外部交聯劑之情形時，其使用量可根據與應交聯之基礎聚合物之平衡，進而根據作為黏著劑之使用用途而適當決定。一般而言，相對於上述基礎聚合物100重量份，較佳為調配5重量份左右以下，進而較 佳為調配0.1~5重量份。進而，亦可於黏著劑中，視需要除上述成分以外，使用先前公知之各種黏著賦予劑、抗老化劑等添加劑。
黏著劑層1b可藉由放射線硬化型黏著劑而形成。放射線硬化型黏著劑可藉由紫外線等放射線之照射而增大交聯度而容易地降低其黏著力，可容易地進行附熱硬化性樹脂層之一次安裝半導體裝置之剝離。作為放射線，可列舉：X射線、紫外線、電子束、α射線、β射線、中子射線等。
放射線硬化型黏著劑可無特別限制地使用具有碳-碳雙鍵等放射線硬化性之官能基，且顯示出黏著性者。作為放射線硬化型黏著劑，例如可例示：於上述丙烯酸系黏著劑、橡膠系黏著劑等通常之感壓性黏著劑中，調配入放射線硬化性之單體成分或低聚物成分而成之添加型之放射線硬化性黏著劑。
作為調配入之放射線硬化性之單體成分，例如可列舉：胺基甲酸酯低聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，放射線硬化性之低聚物成分可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種低聚物，其重量平均分子量為100~30000左右之範圍者較為合適。放射線硬化性之單體成分或低聚物成分之調配量可根據上述黏著劑層之種類而適當地決定可降低黏著劑層之黏著力之量。一般而言，相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為5~500重量份，較佳為40~150重量份左右。
又，作為放射線硬化型黏著劑，除上述說明之添加型之放射線硬化性黏著劑以外，作為基礎聚合物，可列舉：使用於聚合物側鏈或 主鏈中或主鏈末端具有碳-碳雙鍵者之內在型之放射線硬化性黏著劑。內在型之放射線硬化性黏著劑無需含有作為低分子成分之低聚物成分等，或不大量含有，因而可不使低聚物成分等在黏著劑中經時地移動，而形成層結構穩定之黏著劑層，故而較佳。
上述具有碳-碳雙鍵之基礎聚合物可無特別限制地使用具有碳-碳雙鍵、且具有黏著性者。作為此種基礎聚合物，較佳為以丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉：上述例示之丙烯酸系聚合物。
上述丙烯酸系聚合物之碳-碳雙鍵之導入法並無特別限制，可採用各種方法，但將碳-碳雙鍵導入至聚合物側鏈使分子設計容易。例如，預先使於丙烯酸系聚合物中具有官能基之單體共聚後，將可與該官能基反應之官能基及具有碳-碳雙鍵之化合物以維持碳-碳雙鍵之放射線硬化性之狀態而進行縮合或加成反應之方法。
作為該等官能基之組合之例，可列舉：羧酸基與環氧基、羧酸基與氮丙啶基、羥基與異氰酸酯基等。該等官能基之組合中，就反應追蹤之容易性之方面而言，較佳為羥基與異氰酸酯基之組合。又，只要為藉由該等官能基之組合，而產生上述具有碳-碳雙鍵之丙烯酸系聚合物之類之組合，則官能基亦可位於丙烯酸系聚合物與上述化合物中之任一側，於上述較佳之組合中，較佳為丙烯酸系聚合物具有羥基，上述化合物具有異氰酸酯基之情形。於該情形時，作為具有碳-碳雙鍵之異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。又，作為丙烯酸系聚合物，可使用使上述例示之含羥基之單體或2-羥基乙基乙烯醚、4-羥基丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等共聚而成者。
上述內在型之放射線硬化性黏著劑可單獨使用上述具有碳-碳雙 鍵之基礎聚合物(尤其是丙烯酸系聚合物)，亦可於不使特性變差之程度下調配上述放射線硬化性之單體成分或低聚物成分。關於放射線硬化性之低聚物成分等，通常相對於基礎聚合物100重量份，為30重量份之範圍內，較佳為0~10重量份之範圍。
較佳為於上述放射線硬化型黏著劑中，於藉由紫外線等進行硬化之情形時，含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物；甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物；安息香乙醚、安息香異丙醚、大茴香偶姻甲醚等安息香醚系化合物；苯偶醯二甲基縮酮等縮酮系化合物；2-萘磺醯氯等芳香族磺醯氯系化合物；1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等光活性肟系化合物；二苯甲酮、苯甲醯苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物；噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物；樟腦醌；鹵化酮；醯基膦氧化物；醯基磷酸酯等。光聚合起始劑之調配量相對於構成黏著劑之丙烯酸系聚合物等基礎聚合物100重量份，例如為0.05~20重量份左右。
再者，於放射線照射時，於產生因氧氣所造成之硬化阻礙之情形時，較理想為自放射線硬化型之黏著劑層1b之表面以任意之方法阻隔氧氣(空氣)。例如，可列舉：以分離件被覆上述黏著劑層1b之表面之方法，或於氮氣環境中進行紫外線等放射線之照射之方法等。
再者，亦可於黏著劑層1b中，於無損本發明之效果等之範圍內，包含各種添加劑(例如，著色劑、增黏劑、增量劑、填充劑、黏著賦予劑、塑化劑、抗老化劑、抗氧化劑、界面活性劑、交聯劑 等)。
黏著劑層1b之厚度並無特別限定，但就破斷強度之調整或熱硬化性樹脂層2之固定保持之兼具性等觀點而言，較佳為1~100μm左右。較佳為2~80μm，進而較佳為5~60μm。
(熱硬化性樹脂層)
本實施形態中之熱硬化性樹脂層2可較佳地用作補強經表面二次安裝之一次安裝半導體裝置之突起電極之一次安裝基板側之根部部分之補強用膜。
作為熱硬化性樹脂層之構成材料，可列舉：併用熱塑性樹脂與熱硬化性樹脂者。又，亦可單獨使用熱塑性樹脂或熱硬化性樹脂。
作為上述熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(polyethylene terephthalate，聚對苯二甲酸乙二酯)或PBT(polybutylene terephthalate，聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或氟樹脂等。該等熱塑性樹脂可單獨使用，或併用兩種以上。該等熱塑性樹脂中，尤佳為離子性雜質較少且耐熱性較高、可確保二次安裝半導體裝置之可靠性之丙烯酸系樹脂。
作為上述丙烯酸系樹脂，並無特別限定，可列舉：以具有碳數30以下、尤其是碳數4~18之直鏈或支鏈之烷基之丙烯酸或甲基丙烯酸之酯之一種或兩種以上作為成分的聚合物等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基、或二十烷基等。
又，作為形成上述聚合物之其他單體，並無特別限定，例如可列舉：丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、伊康酸、順丁烯二酸、反丁烯二酸或丁烯酸等各種含羧基之單體，順丁烯二酸酐或伊康酸酐等各種酸酐單體，(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸4-羥基丁酯、(甲基)丙烯酸6-羥基己酯、(甲基)丙烯酸8-羥基辛酯、(甲基)丙烯酸10-羥基癸酯、(甲基)丙烯酸12-羥基月桂酯或丙烯酸(4-羥基甲基環己基)甲酯等各種含羥基之單體，苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等各種含磺酸基之單體，或2-羥基乙基丙烯醯基磷酸酯等各種含磷酸基之單體，丙烯腈等之類之含氰基之單體等。
作為上述熱硬化性樹脂，可列舉：酚樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺基甲酸酯樹脂、聚矽氧樹脂、或熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨使用或併用兩種以上。尤佳為腐蝕突起電極之離子性雜質等之含有較少之環氧樹脂。又，作為環氧樹脂之硬化劑，較佳為酚樹脂。
上述環氧樹脂只要為通常用作接著劑組合物者，則並無特別限定，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、酚系酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂、或乙內醯脲型、三縮水甘油基異氰尿酸酯型或縮水甘油胺型等環氧樹脂。該等可單獨使用，或併用兩種以上。該等環氧樹脂中，尤佳為酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於：該等環氧樹脂與作為硬化劑之酚樹脂之反應性充分，耐熱性等優異。
進而，上述酚樹脂係作為上述環氧樹脂之硬化劑發揮作用者， 例如可列舉：酚系酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚樹脂、可溶酚醛型酚樹脂、聚對羥基苯乙烯等聚氧基苯乙烯等。該等可單獨使用，或併用兩種以上。該等酚樹脂中，尤佳為酚系酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於：可提高二次安裝半導體裝置之連接可靠性。
上述環氧樹脂與酚樹脂之調配比率較佳為例如以相對於上述環氧樹脂成分中之環氧基每1當量，酚樹脂中之羥基成為0.5~2.0當量之方式進行調配。更佳為0.8~1.2當量。即，其原因在於：若兩者之調配比率不在上述範圍，則不推進充分之硬化反應，環氧樹脂硬化物之特性容易劣化。
再者，於本發明中，尤佳為使用環氧樹脂、酚樹脂及丙烯酸系樹脂之熱硬化性樹脂層。該等樹脂之離子性雜質較少且耐熱性較高，故而可確保二次安裝半導體裝置之可靠性。該情形時之調配比係相對於丙烯酸系樹脂成分100重量份，環氧樹脂與酚樹脂之混合量為10~1000重量份。
作為環氧樹脂與酚樹脂之熱硬化促進觸媒，並無特別限制，可自公知之熱硬化促進觸媒中適當選擇而使用。熱硬化促進觸媒可單獨使用或組合兩種以上而使用。作為熱硬化促進觸媒，例如可使用：胺系硬化促進劑、磷系硬化促進劑、咪唑系硬化促進劑、硼系硬化促進劑、磷-硼系硬化促進劑等。
為了去除焊料球之表面之氧化膜而使半導體元件之安裝變得容易，亦可於熱硬化性樹脂層2中添加助焊劑。作為助焊劑，並無特別限定，可使用先前公知之具有助焊作用之化合物，例如可列舉：雙酚酸、己二酸、乙醯水楊酸、苯甲酸、二苯乙醇酸、壬二酸、苯甲酸苄酯、丙二酸、2,2-雙(羥基甲基)丙酸、水楊酸、鄰甲氧基苯甲酸、間 羥基苯甲酸、丁二酸、2,6-二甲氧基甲基對甲酚、苯甲醯肼、碳醯肼、丙二醯肼、丁二醯肼、戊二醯肼、水楊醯肼、亞胺基二乙酸二醯肼、伊康酸二醯肼、檸檬酸三醯肼、硫卡肼、二苯甲酮腙、4,4'-氧基雙苯磺醯肼及己二醯肼等。助焊劑之添加量只要為可發揮上述助焊作用之程度即可，通常相對於熱硬化性樹脂層中所含之樹脂成分100重量份，為0.1~20重量份左右。
於預先使本實施形態之熱硬化性樹脂層2成為某種程度交聯之情形時，於製作時，預先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑即可。藉此，可提高高溫下之接著特性，謀求耐熱性之改善。
作為上述交聯劑，尤其更佳為：甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、對苯二異氰酸酯、1,5-萘二異氰酸酯、多元醇與二異氰酸酯之加成物等聚異氰酸酯化合物。作為交聯劑之添加量，較佳為相對於上述聚合物100重量份，通常設為0.05~7重量份。若交聯劑之量多於7重量份，則會降低接著力，故而欠佳。另一方面，若少於0.05重量份，則凝集力不足，故而欠佳。又，亦可與各種聚異氰酸酯化合物一同，視需要一併包含環氧樹脂等其他多官能性化合物。
又，亦可於熱硬化性樹脂層2中，適當調配無機填充劑。無機填充劑之調配可實現導電性之賦予或熱導性之提高、儲存模數之調節等。
作為上述無機填充劑，例如可列舉：二氧化矽、黏土、石膏、碳酸鈣、硫酸鋇、氧化鋁、氧化鈹、碳化矽、氮化矽等陶瓷類、鋁、銅、銀、金、鎳、鉻、鉛、錫、鋅、鈀、焊料等金屬、或合金類、其他包含碳等之各種無機粉末。該等可單獨使用或併用兩種以上。其中，較佳為使用二氧化矽，尤佳為使用熔融二氧化矽。
雖然無機填充劑之平均粒徑並無特別限定，但較佳為0.005~10 μm之範圍內，更佳為0.01~5μm之範圍內，進而較佳為0.1~2.0μm。若上述無機填充劑之平均粒徑低於0.005μm，則有容易產生粒子之凝集，而難以形成熱硬化性樹脂層之情形。另一方面，若上述平均粒徑超過10μm，則有容易產生無機粒子向熱硬化性樹脂層與一次安裝基板之間之夾入，降低補強水平而降低二次安裝半導體裝置之耐衝擊性或連接可靠性之虞。再者，於本發明中，亦可將平均粒徑相互不同之無機填充劑彼此組合而使用。又，平均粒徑係藉由光度式之粒度分佈計(HORIBA製造，裝置名：LA-910)所求出之值。
上述無機填充劑之調配量較佳為相對於有機樹脂成分100重量份，為10~400重量份，更佳為50~250重量份。若無機填充劑之調配量未達10重量份，則有降低儲存模數而嚴重損害突起電極之根部區域之應力緩和可靠性之情形。另一方面，若超過400重量份，則有降低熱硬化性樹脂層2之流動性，無法充分地埋入至一次安裝基板之凹凸或突起電極之根部之空間而成為空隙或裂痕之原因之情形。
再者，可於熱硬化性樹脂層2中，除上述無機填充劑以外，視需要適當調配其他添加劑。作為其他添加劑，例如可列舉：阻燃劑、矽烷偶合劑或離子捕捉劑等。作為上述阻燃劑，例如可列舉：三氧化二銻、五氧化二銻、溴化環氧樹脂等。該等可單獨使用或併用兩種以上。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。該等化合物可單獨使用或併用兩種以上。作為上述離子捕捉劑，例如可列舉：鋁碳酸鎂類、氫氧化鉍等。該等可單獨使用或併用兩種以上。
於本實施形態中，較佳為熱硬化前之熱硬化性樹脂層2之60~100℃下之熔融黏度為4000Pa‧s以下，更佳為500Pa‧s以上且4000Pa‧s以下。藉由將相當於熱壓接溫度之60~100℃下之熔融黏度設為 上述範圍，可使突起電極4(參照圖2A)向熱硬化性樹脂層2之進入變得容易。
熱硬化性樹脂層2之厚度(於複層之情形時，為總厚)並無特別限定，但若考慮到熱硬化性樹脂層2之強度或突起電極4之根部部分之補強性，則亦可為5μm以上且50μm以下左右。再者，熱硬化性樹脂層2之厚度只要考慮到於突起電極4中應補強之根部部分之範圍而適當設定即可。
補強片材8之熱硬化性樹脂層2較佳為由分離件保護(未圖示)。分離件具有至供於實用前作為保護熱硬化性樹脂層2之保護材料之功能。分離件係於補強片材8之熱硬化性樹脂層2上貼合一次安裝半導體裝置10時被剝離。作為分離件，亦可使用聚對苯二甲酸乙二酯(PET)、聚乙烯、聚丙烯、或由氟系剝離劑、丙烯酸長鏈烷基酯系剝離劑等剝離劑進行表面塗佈之塑膠膜或紙等。
(補強片材之製造方法)
本實施形態之補強片材8可藉由分別製作例如背面研削用膠帶1及熱硬化性樹脂層2，於最後將該等貼合而製成。具體而言，可根據如下之順序製作。
首先，基材層1a可根據先前公知之製膜方法而製膜。作為該製膜方法，例如可例示：壓延製膜法、於有機溶劑中之流延法、密閉系之吹脹擠壓法、T模擠壓法、共擠壓法、乾式層壓法等。
繼而，製備黏著劑層形成用之黏著劑組合物。於黏著劑組合物中，調配如黏著劑層之項中所說明之樹脂或添加物等。將所製備之黏著劑組合物塗佈於基材層1a上而形成塗佈膜後，將該塗佈膜於特定條件下乾燥(視需要進行加熱交聯)，而形成黏著劑層1b。作為塗佈方法，並無特別限定，例如可列舉：輥式塗敷、網版塗敷、凹版塗敷等。又，作為乾燥條件，例如於乾燥溫度80~150℃、乾燥時間0.5~ 5分鐘之範圍內進行。又，亦可於分離件上塗佈黏著劑組合物而形成塗佈膜後，於上述乾燥條件下使塗佈膜乾燥而形成黏著劑層1b。其後，於基材層1a上將黏著劑層1b與分離件一同貼合。藉此，製作具備基材層1a及黏著劑層1b之背面研削用膠帶1。
熱硬化性樹脂層2係例如以如下之方式製作。首先，製備作為熱硬化性樹脂層2之形成材料之接著劑組合物。於該接著劑組合物中，如熱硬化性樹脂層之項中所說明，調配有熱塑性成分或環氧樹脂、各種添加劑等。
繼而，以於基材分離件上成為特定厚度之方式塗佈所製備之接著劑組合物而形成塗佈膜後，將該塗佈膜於特定條件下乾燥，形成熱硬化性樹脂層。作為塗佈方法，並無特別限定，例如可列舉：輥式塗敷、網版塗敷、凹版塗敷等。又，作為乾燥條件，例如於乾燥溫度70~160℃、乾燥時間1~5分鐘之範圍內進行。又，亦可於分離件上塗佈接著劑組合物而形成塗佈膜後，於上述乾燥條件下使塗佈膜乾燥而形成熱硬化性樹脂層。其後，於基材分離件上將熱硬化性樹脂層與分離件一同貼合。
繼而，自背面研削用膠帶1及熱硬化性樹脂層2分別剝離分離件，以熱硬化性樹脂層與黏著劑層成為貼合面之方式將兩者貼合。貼合可藉由例如壓接而進行。此時，層壓溫度並無特別限定，例如較佳為30~100℃，更佳為40~80℃。又，線壓並無特別限定，例如較佳為0.98~196N/cm，更佳為9.8~98N/cm。繼而，將熱硬化性樹脂層上之基材分離件剝離，獲得本實施形態之補強片材。
(一次安裝半導體裝置)
如圖2A所示，本實施形態之一次安裝半導體裝置10只要為於第1主面3a形成有突起電極4之半導體裝置即可。例如，半導體晶片或半導體元件5係指經由所謂之中介層或基板3而與突起電極4(亦稱為焊料 球、焊料凸塊、導電性球等)連接之形態之半導體裝置，通常由密封樹脂6密封而構成封裝體。因此，嚴格而言，圖2A所示係成為所謂複數個一次安裝半導體裝置被樹脂密封之密封集合體，但於本說明書中，有不區別兩者而稱為一次安裝半導體裝置之情況。又，多晶片模組(MCM)或晶片尺寸封裝(CSP)、球柵陣列(BGA)等亦包含於一次安裝半導體裝置中。
具體而言，本實施形態之一次安裝半導體裝置10主要係由可切出之中介層3、於中介層3上排列為XY平面狀並由密封樹脂6密封之半導體晶片5、以及夾著中介層3而與形成於半導體晶片5之電極(未圖示)電性連接之突起電極4形成。再者，半導體晶片5較佳為與中介層3之間進行電極接合，複數個一併由密封樹脂6密封。
作為中介層3，並無特別限定，例如可列舉：陶瓷基板、塑膠(環氧、雙順丁烯二醯亞胺三、聚醯亞胺等)基板、矽基板等。
半導體晶片5與中介層3之電極接合之形態並無特別限定，可列舉：藉由金線、銅線之打線接合、或凸塊接合等。又，作為突起電極，可列舉：金、銅、鎳、鋁、焊料及該等之組合等。突起電極之尺寸並無特別限定，例如可列舉：直徑100~300μm左右。
於補強片材8中，熱硬化性樹脂層2之厚度較佳為突起電極4之高度之50%以下，更佳為48%以下，尤佳為45%以下。藉此，可使突起電極4超出熱硬化性樹脂層2而達到黏著劑層1b。其結果為，於其後之背面研削用膠帶1之剝離時，突起電極4自熱硬化性樹脂層2露出(參照圖2C)，故而可達成與配線基板之良好之電性連接。同時，使突起電極自熱硬化性樹脂層之露出量之調整變得容易，故而可高效率地進行根部部分之集中性之補強。
(貼合)
如圖2A所示，於一次安裝半導體裝置10之形成有突起電極4之第 1主面3a貼合補強片材8。貼合就通用性及生產性之觀點而言，較佳為於加熱加壓條件下進行，可較佳地使用輥式壓接或加壓壓接方式等。
貼合溫度就熱硬化性樹脂層2之流動性之觀點而言，較佳為於構成熱硬化性樹脂層2之樹脂之軟化點以上且硬化反應開始溫度以下進行。作為此種溫度，通常自60℃~100℃左右之溫度範圍選擇。藉此，可確保樹脂之流動性，使突起電極間由熱硬化性樹脂層2充分埋入，並且可獲得充分之密接性。
加壓就半導體裝置之強度及熱硬化樹脂片材之流動性之觀點而言，較佳為一面負載0.1~1MPa，更佳為負載0.3~0.7MPa之壓力進行按壓一面進行。又，亦可視需要於減壓下(1~1000Pa)進行壓接。
[步驟(B)]
於步驟(B)中，於藉由補強片材8之保持下，進行對一次安裝半導體裝置10之背面研削加工。於研削步驟中，自上述一次安裝半導體裝置10之與第1主面3a相反側之第2主面(即，背面)3b側進行研削(參照圖2B)。再者，於本實施形態中，僅進行密封樹脂6之研削，但亦可不僅限於此，而亦對半導體晶片5之背面進行研削。於半導體晶片5之背面不被樹脂密封之情形時，直接研削半導體晶片5之背面。作為用於一次安裝半導體裝置10之背面研削之薄型加工機，並無特別限定，例如可例示：研削機(背面研磨機)、研磨墊等。又，亦可利用蝕刻等化學方法進行背面研削。背面研削係進行至使一次安裝半導體裝置成為所需之厚度(例如，10~500μm)。
[步驟(C)]
研削步驟後，於將熱硬化性樹脂層2貼附之狀態下將一次安裝半導體裝置10自背面研削用膠帶1剝離(圖2C)，將附熱硬化性樹脂層2之一次安裝半導體裝置10與切割膠帶11貼合(參照圖2D)。此時，以使一次安裝半導體裝置之第2主面3b側與切割膠帶11之黏著劑層11b對向之 方式進行貼合。因此，貼合於一次安裝半導體裝置10之第1主面3a之熱硬化性樹脂層2成為露出之狀態(圖2D中，朝上)。再者，切割膠帶11具有於基材層11a上積層有黏著劑層11b之結構。作為基材層11a及黏著劑層11b，可使用上述背面研削用膠帶1之基材層1a及黏著劑層1b之項中所示之成分及製法較佳地製作。又，亦可較佳地使用市售之切割膠帶。
於一次安裝半導體裝置10之自背面研削用膠帶1之剝離時，於黏著劑層1b具有放射線硬化性之情形時，可藉由對黏著劑層1b照射放射線而使黏著劑層1b硬化，而容易地進行剝離。放射線之照射量只要考慮使用之放射線之種類或黏著劑層之硬化度等而適當設定即可。再者，於黏著劑層1b不具有放射線硬化性之情形時，亦可於背面研削後，將附熱硬化性樹脂層2之一次安裝半導體裝置10與切割膠帶11貼合後，將背面研削用膠帶1剝離。
於本實施形態之補強片材8中，較佳為熱硬化性樹脂層2與黏著劑層1b之間之剝離力為0.02N/20mm以上且0.3N/20mm以下，更佳為0.03N/20mm以上且0.2N/20mm以下。藉由設為此種剝離力，可平衡良好地兼具一次安裝半導體裝置之背面研削時之保持力與自背面研削用膠帶之剝離時之剝離性。
[切割步驟]
於切割步驟中，如圖2E所示，將一次安裝半導體裝置10及熱硬化性樹脂層2切割而形成單片化之附熱硬化性樹脂層2之一次安裝半導體裝置10。此處，所獲得之一次安裝半導體裝置10與切斷為相同形狀之熱硬化性樹脂層2成為一體。切割係自一次安裝半導體裝置10之貼合有熱硬化性樹脂層2之第1主面3a側根據常法進行。
於本步驟中，例如可採用進行切斷至切割膠帶11之被稱為全切之切斷方式等。作為用於本步驟之切割裝置，並無特別限定，可使用先 前公知者。
再者，於繼切割步驟後進行切割膠帶之延伸之情形時，該延伸可使用先前公知之延伸裝置進行。延伸裝置具有可經由切割環將切割膠帶向下方按壓之環形狀之外環、及徑小於外環之支持切割膠帶之內環。藉由該延伸步驟，而於附熱硬化性樹脂層2之一次安裝半導體裝置10之拾取時，可防止相鄰者彼此接觸而破損。
繼而，於作為二次安裝步驟之步驟(D)之前，為了回收經單片化之一次安裝半導體裝置10，而進行拾取。作為拾取之方法，並無特別限定，可採用先前公知之各種方法。例如可列舉：將各個一次安裝半導體裝置10自切割膠帶之基材層側利用針頂出，將經頂出之一次安裝半導體裝置10利用拾取裝置進行拾取之方法等。再者，經拾取之一次安裝半導體裝置10係與貼合於第1主面3a之熱硬化性樹脂層2成為一體而構成積層體。
此處，拾取係於黏著劑層11b為紫外線硬化型之情形時，對該黏著劑層11b照射紫外線後進行。藉此，降低黏著劑層11b對一次安裝半導體裝置10之黏著力，而使一次安裝半導體裝置10之剝離變得容易。其結果為，可不損傷一次安裝半導體裝置10而進行拾取。紫外線照射時之照射強度、照射時間等條件並無特別限定，只要適當視需要設定即可。又，作為用於紫外線照射之光源，例如可使用：低壓水銀燈、低壓高輸出燈、中壓水銀燈、無電極水銀燈、氙氣閃光燈、準分子燈、紫外LED(Light Emitting Diode，發光二極體)等。
[步驟(D)]
於步驟(D)中，將附熱硬化性樹脂層2之一次安裝半導體裝置10經由突起電極4而電性連接於配線基板23(參照圖2F)。具體而言，以一次安裝半導體裝置10之第1主面3a與配線基板23對向之形態，根據常法固定於配線基板23。例如，一面使形成於一次安裝半導體裝置10之 突起電極4接觸於附著於配線基板23之連接墊之接合用之導電材料(未圖示)進行按壓一面使導電材料熔融，藉此可確保一次安裝半導體裝置10與配線基板23之電性連接。於一次安裝半導體裝置10之第1主面3a側貼附有熱硬化性樹脂層2，故而可一面補強突起電極4之根部部分，一面實現突起電極4與配線基板23之電性連接。
作為二次安裝步驟中之通常之加熱條件，為200~300℃，作為加壓條件，為0~1000N。又，亦可以多階段進行二次安裝步驟中之熱壓接處理。例如，可採用於150℃、50N下進行10秒處理後，於280℃、10~100N下進行10秒處理之順序。藉由以多階段進行熱壓接處理，而可高效率地去除突起電極4與墊間之樹脂，獲得進一步良好之金屬間接合。
作為配線基板23，可列舉：剛性配線基板或柔性配線基板、陶瓷配線基板、金屬芯配線基板、有機基板等公知之配線基板。
再者，於二次安裝步驟中，使突起電極4及導電材料之一者或兩者熔融，而使兩者連接，但作為該突起電極4及導電材料之熔融時之溫度，通常設為260℃左右(例如，250℃~300℃)。本實施形態之補強片材可藉由將熱硬化性樹脂層2藉由環氧樹脂等形成，而製成具有亦可耐受該安裝步驟中之高溫下之耐熱性者。
熱硬化性樹脂層2可藉由二次安裝時之熱之賦予而硬化，亦可於二次安裝步驟後設置硬化步驟而硬化。硬化步驟中之加熱溫度只要為使熱硬化性樹脂層2硬化即可，並無特別限定，為100~300℃左右即可。
[二次安裝半導體裝置]
繼而，一面參照圖式一面對使用該補強片材所獲得之二次安裝半導體裝置進行說明(參照圖2F)。於本實施形態之半導體裝置20中，使一次安裝半導體裝置10與配線基板23經由形成於一次安裝半導體裝 置10上之突起電極4及設置於配線基板23上之導電材料(未圖示)而電性連接。又，於突起電極4之根部部分配置有熱硬化性樹脂層2以補強該部分，故而可發揮優異之耐衝擊性。
<第2實施形態>
本實施形態中使用之一次安裝半導體裝置具有作為目標之厚度，故而省略研削步驟。因此，作為第2實施形態中之補強片材，使用具備切割膠帶與積層於該切割膠帶上之熱硬化性樹脂層之補強片材。
[步驟(A)]
於步驟(A)中，於一次安裝半導體裝置10之第1主面3a貼合特定之補強片材。補強片材具備切割膠帶21與積層於該切割膠帶21上之熱硬化性樹脂層2(參照圖3A)。切割膠帶21具備基材層21a、及積層於基材層21a上之黏著劑層21b。再者，熱硬化性樹脂層2係積層於黏著劑層21b上。作為此種切割膠帶21之基材層21a及黏著劑層21b、及熱硬化性樹脂層2，可使用與第1實施形態中之基材層1a及黏著劑層1b、及熱硬化性樹脂層2相同者。一次安裝半導體裝置或貼合條件等可採用與第1實施形態相同者。
[步驟(B)]
於步驟(B)中，於藉由補強片材之保持下，進行對一次安裝半導體裝置10之切割加工。切割條件等可較佳地採用與第1實施形態相同者。
其後，與第1實施形態同樣地，經過經單片化之一次安裝半導體裝置10之拾取後，進行步驟(D)，藉此可製造二次安裝半導體裝置。
<第3實施形態>
於第1實施形態中，作為補強片材之構成，說明具備基材層、黏著劑層及熱硬化性樹脂層之態樣，但於第3實施形態中，對於在基材 層與黏著劑層之間進而具備包含熱塑性樹脂之中間層之補強片材進行說明。若除了使補強片材具備中間層之方面以外，則可藉由經過與第1實施形態相同之步驟而製造特定之半導體裝置。
如圖4所示，補強片材38依序具備：基材層31a、中間層31c、黏著劑層31b及熱硬化性樹脂層2。若突起電極之尺寸增大，則為了補強片材之貼合時之突起電極之進入，而必須分別增厚熱硬化性樹脂層及黏著劑層。然而，於增厚各層之情形時，突起電極之根部區域之集中性之補強變得困難，或產生黏著劑層之破斷強度之降低。對此，藉由如本實施形態，設置包含熱塑性樹脂之中間層31c，而使突起電極4容易地進入至藉由貼合時之加熱而軟化之中間層31c，故而可排除熱硬化性樹脂層2及黏著劑層31b之厚度之變更之必要性。
作為中間層31c之形成材料，較佳為列舉：於步驟(A)中之貼合溫度下進行軟化之熱塑性樹脂。作為此種熱塑性樹脂，例如可列舉：丙烯酸系樹脂、聚酯、聚烯烴、聚醯亞胺、聚醯胺醯亞胺、聚矽氧烷、聚醚、聚苯乙烯、多硫化物、聚碳酸酯等。其中，就耐熱性、吸濕性、玻璃轉移溫度之觀點而言，較佳為丙烯酸系樹脂。
<第4實施形態>
於第1實施形態中，作為一次安裝半導體裝置，使用將半導體晶片覆晶安裝於中介層之封裝體，但於第4實施形態中，使用晶圓級晶片尺寸封裝(WS-CSP；以下，亦稱為「CSP」)。
於圖5中，例示於配線基板43二次安裝有CSP之二次安裝半導體裝置40。CSP具備：晶片45；形成於晶片45之單面之導電性支柱49及再配線層46；積層於再配線層46上之密封樹脂層47；以及設置於導電性支柱49之頂端之突起電極44；且於該CSP之密封樹脂層47上進而積層用以補強突起電極之根部部分之熱硬化性樹脂層42。二次安裝半導體裝置40除使用CSP作為一次安裝半導體裝置以外，亦可藉由經過第 1實施形態中所說明之步驟而較佳地製造。
[實施例]
以下，例示性地詳細地說明該發明之較佳之實施例。其中，該實施例中記載之材料或調配量等只要無特別限定性之記載，則不為將該發明之範圍僅限定於該等之宗旨。又，所謂份，意指重量份。
[實施例1]
(熱硬化性樹脂層之製作)
將相對於以丙烯酸乙酯-甲基丙烯酸甲酯作為主成分之丙烯酸酯系聚合物(商品名「Pagoclone W-197 CM」，根上工業股份有限公司製造)：100份，環氧樹脂1(商品名「Epikote 1004」，JER股份有限公司製造)：23份、環氧樹脂2(商品名「Epikote 828」，JER股份有限公司製造)：209份、酚樹脂(商品名「Milex XLC-4L」，三井化學股份有限公司製造)：215份、球狀二氧化矽(商品名「YC100C-MLC」，Admatechs股份有限公司製造)：370份、有機酸(商品名「鄰甲氧基苯甲酸」，東京化成股份有限公司製造)：5.4份、咪唑觸媒(商品名「2PHZ-PW」，四國化成股份有限公司製造)：2.7份溶解於甲基乙基酮中，製備固形物成分濃度成為23.6重量%之樹脂組合物之溶液。
將該樹脂組合物之溶液塗佈於作為剝離襯墊(分離件)之經聚矽氧脫模處理之厚度為50μm之包含聚對苯二甲酸乙二酯膜之脫模處理膜上後，於130℃下乾燥2分鐘，藉此，製作厚度30μm之熱硬化性樹脂層。
(黏著材層之製作)
向具備冷卻管、氮氣導入管、溫度計、及攪拌裝置之反應容器中，添加丙烯酸-2-乙基己酯(以下，亦稱為「2EHA」)86.4份、丙烯酸-2-羥基乙酯(以下，亦稱為「HEA」)13.6份、過氧化苯甲醯0.2份、及甲苯65份，於氮氣氣流中在61℃下進行6小時聚合處理，獲得丙烯 酸系聚合物A。
向丙烯酸系聚合物A中添加2-甲基丙烯醯氧基乙基異氰酸酯(以下，亦稱為「MOI」)14.6份，於空氣氣流中在50℃下進行48小時加成反應處理，獲得丙烯酸系聚合物A'。
繼而，添加相對於丙烯酸系聚合物A' 100份之聚異氰酸酯化合物(商品名「Coronate L」，日本聚胺酯(Nippon Polyurethane)(股)製造)1份、及光聚合起始劑(商品名「Irgacure 651」，Ciba Specialty Chemicals公司製造)5份，獲得黏著劑組合物溶液A。
將黏著劑組合物溶液A塗佈於聚對苯二甲酸乙二酯(PET)製之剝離襯墊之實施有聚矽氧處理之面上，於120℃下進行2分鐘加熱乾燥，形成厚度50μm之黏著劑層。繼而，於所形成之黏著劑層上，貼合未進行聚矽氧處理之PET基材。該PET基材為厚度50μm。
(補強片材之製作)
將黏著劑層上之剝離襯墊剝離後，將所獲得之黏著劑層與熱硬化性樹脂層於40℃下利用手壓輥進行貼合，藉此製作補強片材。
(向晶圓之貼合)
將熱硬化性樹脂層上之剝離襯墊剝離後，使用貼合裝置(DR-3000II，日東精機(股)製造)，將補強片材之熱硬化性樹脂層貼合於晶圓之凸塊形成面而製作附補強片材之晶圓。
<貼合條件>
溫度：80℃
速度：3mm/s
壓力：100%(0.5MPa)
<評價晶圓>
WALTS股份有限公司製造
FC150JY_LF
凸塊高度：70μm
[實施例2]
於製作黏著劑層時，將聚異氰酸酯化合物之調配量設為相對於丙烯酸系聚合物A' 100份為0.5份，除此以外，以與實施例1相同之方式，製造補強片材及附補強片材之晶圓。
[實施例3]
於製作黏著劑層時，將聚異氰酸酯化合物之調配量設為相對於丙烯酸系聚合物A' 100份為0.2份，除此以外，以與實施例1相同之方式，製造補強片材及附補強片材之晶圓。
[實施例4]
於製作黏著劑層時，將聚異氰酸酯化合物之調配量設為相對於丙烯酸系聚合物A' 100份為0.1份，除此以外，以與實施例1相同之方式，製作補強片材及附補強片材之晶圓。
[比較例1]
於製作黏著劑層時，將聚異氰酸酯化合物之調配量設為相對於丙烯酸系聚合物A' 100份為2份，除此以外，以與實施例1相同之方式，製作補強片材及附補強片材之晶圓。
[比較例2]
於製作黏著劑層時，不調配聚異氰酸酯化合物，除此以外，以與實施例1相同之方式，製作補強片材及附補強片材之晶圓。
[評價]
(黏著劑層之破斷強度之測定)
對根據上述步驟所製作之黏著劑層照射300mJ/cm2之UV(ultraviolet，紫外線)光而使黏著劑層硬化，將硬化後之黏著劑層切斷為寬度30mm×長度10mm而製成試片。將試片放置於拉伸試驗機「Autograph ASG-50D型」(島津製作所製造)中，於拉伸速度300 mm/min、夾頭間距離10mm、室溫(23℃)下進行拉伸試驗，求出應力-應變曲線。求出此時之試片破斷時之應力作為破斷強度。將結果示於表1。
(黏著劑層之熔融黏度之測定)
測定根據上述順序所製作之黏著劑層(UV硬化前)之熔融黏度。熔融黏度之測定係使用流變計(HAAKE公司製造，RS-1)，藉由平行板法進行測定所得之值。更詳細而言，於間隙100μm、轉板直徑20mm、旋轉速度10s-1、升溫速度10℃/min之條件下，於50℃至120℃之範圍內測定熔融黏度。其結果為，於實施例1~4及比較例2中，於所有上述溫度範圍內均為4000Pa‧s以下。另一方面，於比較例1中，有於上述溫度範圍內超過4000Pa‧s之階段。於表1中，顯示上述溫度範圍中之80℃下之熔融黏度之測定結果。
(向凸塊之補強片材之樹脂成分之轉移之評價)
自根據上述順序所製作之附補強片材之晶圓之PET基材側照射300mJ/cm2之UV光而使黏著劑層硬化，其後，將黏著劑層與基材一同自熱硬化性樹脂層剝離。藉由利用光學顯微鏡(500倍)觀察此時之凸塊，而觀察補強片材之任意之樹脂成分之向凸塊之轉移(樹脂殘渣)之有無。又，使用顯微FT-IR(fourier transform infrared radiation，傅立葉轉換紅外線光譜)根據以下之順序進行轉移至凸塊之樹脂殘渣之鑑定。將以光學顯微鏡觀察到之凸塊上之樹脂殘渣於金剛石池上展開，使用顯微FT-IR(Thermo Fisher Scientific，「Nicolet 8700」)於透射法、分解能4.0cm-1、累計次數512次之條件下測定紅外光譜。將於1100cm-1下觀察到源自二氧化矽填料之波峰之情形鑑定為樹脂殘渣源自熱硬化性樹脂層，將未觀察到之情形鑑定為源自黏著劑層。將結果示於表1。
[表1]
由表1可知，於實施例中，熱硬化性樹脂層及黏著劑層均未轉移至凸塊，而凸塊之自熱硬化性樹脂層之露出及黏著劑層之剝離可順利地進行。另一方面，於比較例1中，熱硬化性樹脂層轉移至凸塊。認為其原因在於：黏著劑層之破斷強度及熔融黏度過高，故而黏著劑層無法追隨凸塊形狀，而妨礙凸塊之自熱硬化性樹脂層之露出。於比較例2中，黏著劑層轉移至凸塊。認為其原因在於：黏著劑層之破斷強度過低而無法抵抗自熱硬化性樹脂層之剝離時之應力。
1a‧‧‧基材層
1b‧‧‧黏著劑層
2‧‧‧熱硬化性樹脂層
3‧‧‧中介層
3a‧‧‧中介層之第1主面
3b‧‧‧中介層之與第1主面相反側之第2主面
4‧‧‧突起電極
5‧‧‧半導體晶片(半導體元件)
6‧‧‧密封樹脂
10‧‧‧一次安裝半導體裝置

Claims (7)

  1. 一種補強片材，其係用以補強於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板之二次安裝半導體裝置者，且依序具備基材層、黏著劑層及熱硬化性樹脂層，上述黏著劑層之破斷強度為0.07MPa以上，且60~100℃下之熔融黏度為4000Pa‧s以下。
  2. 如請求項1之補強片材，其中上述熱硬化性樹脂層之厚度為上述突起電極之高度之50%以下。
  3. 如請求項1或2之補強片材，其中上述熱硬化性樹脂層與上述黏著劑層之間之剝離力為0.02N/20mm以上且0.3N/20mm以下。
  4. 如請求項1或2之補強片材，其中於上述基材層與上述黏著劑層之間進而具備包含熱塑性樹脂之中間層。
  5. 一種二次安裝半導體裝置之製造方法，其係使於第1主面形成有突起電極之一次安裝半導體裝置經由該突起電極而電性連接於配線基板者，且包括：(A)於上述一次安裝半導體裝置之第1主面貼合如請求項1至4中任一項之補強片材之步驟；(B)於藉由上述補強片材之保持下，對上述一次安裝半導體裝置進行加工之步驟；(C)將上述補強片材中之上述熱硬化性樹脂層與上述黏著劑層剝離而獲得上述附熱硬化性樹脂層之一次安裝半導體裝置之步驟；及(D)使上述附熱硬化性樹脂層之一次安裝半導體裝置經由上述突起電極而電性連接於配線基板之步驟。
  6. 如請求項5之二次安裝半導體裝置之製造方法，其中於步驟(A)中，將上述補強片材以上述突起電極達到上述黏著劑層之方式進行貼合。
  7. 如請求項5或6之二次安裝半導體裝置之製造方法，其中上述黏著劑層為放射線硬化型黏著劑層，且於對該放射線硬化型黏著劑層照射放射線後進行步驟(C)。
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