CN101855710B - 切割/芯片接合薄膜 - Google Patents
切割/芯片接合薄膜 Download PDFInfo
- Publication number
- CN101855710B CN101855710B CN2008801150899A CN200880115089A CN101855710B CN 101855710 B CN101855710 B CN 101855710B CN 2008801150899 A CN2008801150899 A CN 2008801150899A CN 200880115089 A CN200880115089 A CN 200880115089A CN 101855710 B CN101855710 B CN 101855710B
- Authority
- CN
- China
- Prior art keywords
- bonding film
- die bonding
- acrylic acid
- methyl
- dicing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
- C09J133/04—Homopolymers or copolymers of esters
- C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
- C09J133/08—Homopolymers or copolymers of acrylic acid esters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/40—High-molecular-weight compounds
- C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
- C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
- C08G18/622—Polymers of esters of alpha-beta ethylenically unsaturated carboxylic acids
- C08G18/6225—Polymers of esters of acrylic or methacrylic acid
- C08G18/6229—Polymers of hydroxy groups containing esters of acrylic or methacrylic acid with aliphatic polyalcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
- C08G18/81—Unsaturated isocyanates or isothiocyanates
- C08G18/8108—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group
- C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
- C09J175/04—Polyurethanes
- C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
- C09J175/16—Polyurethanes having carbon-to-carbon unsaturated bonds having terminal carbon-to-carbon unsaturated bonds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01016—Sulfur [S]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/14—Layer or component removable to expose adhesive
- Y10T428/1462—Polymer derived from material having at least one acrylic or alkacrylic group or the nitrile or amide derivative thereof [e.g., acrylamide, acrylate ester, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Abstract
本发明提供即使在工件为薄型的情况下将工件切割时的保持力与将通过切割得到的芯片状工件和该芯片接合薄膜一体地剥离时的剥离性的平衡特性也优良的切割/芯片接合薄膜。本发明的切割/芯片接合薄膜,具备在基材上具有粘合剂层的切割薄膜和设置在该粘合剂层上的芯片接合薄膜,其特征在于,所述粘合剂层含有包含作为主单体的丙烯酸酯、相对于丙烯酸酯含量在10~30摩尔%范围内的含羟基单体和相对于含羟基单体含量在70~90摩尔%范围内的具有自由基反应性碳碳双键的异氰酸酯化合物而构成的聚合物,所述芯片接合薄膜含有环氧树脂而构成。
Description
技术领域
本发明涉及将用于固着芯片状工件(半导体芯片等)与电极构件的胶粘剂在切割前附着在工件(半导体晶片等)上的状态下供给工件切割的切割/芯片接合薄膜。
背景技术
形成有电路图案的半导体晶片(工件),在根据需要通过背面研磨而调节厚度后,切割为半导体芯片(芯片状工件)(切割工序)。在切割工序中,为了除去切割层,一般在适度的液压(通常约2kg/cm2)下清洗半导体晶片。然后,将前述半导体芯片利用胶粘剂固着到引线框等被粘物上(安装工序)后,移至接合工序。在所述安装工序中,将胶粘剂涂布到引线框或半导体芯片上。但是,该方法中胶粘剂层的均匀化比较困难,另外胶粘剂的涂布需要特殊装置和长时间。因此,提出了在切割工序中胶粘保持半导体晶片并且还提供安装工序所需要的芯片固着用胶粘剂层的切割/芯片接合薄膜(例如,参考专利文献1)。
专利文献1中记载的切割/芯片接合薄膜,在支撑基材上可剥离地设置有胶粘剂层。即,在胶粘剂层的保持下切割半导体晶片后,拉伸支撑基材将半导体芯片与胶粘剂层一起剥离,将其分别回收后通过该胶粘剂层固着到引线框等被粘物上。
对于此种切割/芯片接合薄膜的胶粘剂层,希望具有对半导体晶片的良好保持力和能够将切割后的半导体芯片与胶粘剂层一体地从支撑基材上剥离的良好剥离性,以不产生不能切割或尺寸误差等问题。但是,使该两种特性平衡决不是件容易的事。特别是像用旋转圆刀等切割半导体晶片的方式等,要求胶粘剂层具有大的保持力的情况下,难以得到满足上述特性的切割/芯片接合薄膜。
因此,为了解决这样的问题,提出了各种改良法(例如,参考专利文献2)。在专利文献2中,提出了在支撑基材与胶粘剂层之间介有可紫外线固化的粘合剂层,将其切割后进行紫外线固化,使粘合剂层与胶粘剂层之间的胶粘力下降,通过两者间的剥离而容易地拾取半导体芯片的方法。
但是,即使通过该改良法,有时也难以得到使切割时的保持力与之后的剥离性良好地平衡的切割/芯片接合薄膜。例如,在得到10mm×10mm以上的大型半导体芯片时,由于其面积大,因此通过一般的芯片接合机不能容易地拾取半导体芯片。
专利文献1:日本特开昭60-57642号公报
专利文献2:日本特开平2-248064号公报
发明内容
本发明鉴于上述问题而进行,其目的在于提供具备在基材上具有粘合剂层的切割薄膜和设置在该粘合剂层上的芯片接合薄膜的切割/芯片接合薄膜,所述切割/芯片接合薄膜即使在半导体晶片为薄型的情况下,将该薄型工件切割时的保持力与将通过切割得到的半导体芯片和该芯片接合薄膜一体地剥离时的剥离性的平衡特性也优良。
本发明人为了解决上述现有问题,对切割/芯片接合薄膜进行了研究。结果发现,切割薄膜中所含的多官能单体成分物质扩散到芯片接合薄膜中,由此切割薄膜与芯片接合薄膜的交界面消失,由此拾取性下降,并且完成了本发明。
即,本发明的切割/芯片接合薄膜,为了解决上述问题,具备在基材上具有粘合剂层的切割薄膜和设置在该粘合剂层上的芯片接合薄膜,其特征在于,所述粘合剂层含有包含作为主单体的丙烯酸酯、相对于丙烯酸酯含量在10~30摩尔%范围内的含羟基单体和相对于含羟基单体含量在70~90摩尔%范围内的具有自由基反应性碳碳双键的异氰酸酯化合物而构成的聚合物,所述芯片接合薄膜含有环氧树脂而构成。
本发明的切割薄膜中,由于使用丙烯酸酯作为主单体,因此可以实现剥离力的下降,结果,可以实现良好的拾取性。另外,通过将含羟基单体的含量设定为10摩尔%以上,抑制紫外线照射后的交联不足。结果,例如可以防止切割时对粘贴在粘合剂层上的切割环产生胶糊残留。另一方面,通过使所述含量为30摩尔%以下,可以防止紫外线照射交联过度进行而难以剥离从而使拾取性下降。
另外,本发明中,由于采用具有自由基反应性碳碳双键的异氰酸酯化合物代替多官能单体,因此不会发生该多官能单体在芯片接合薄膜中物质扩散的情况。结果,可以防止切割薄膜与芯片接合薄膜的边界面消失,可以实现更好的拾取性。
前述构成中,所述丙烯酸酯优选为CH2=CHCOOR(式中,R为碳原子数6~10的烷基)。使用CH2=CHCOOR作为丙烯酸酯时,通过使用式中的烷基R的碳原子数为6~10的范围内的丙烯酸酯,可以防止剥离力过大而使拾取性下降。
所述含羟基单体优选为选自由(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯和(甲基)丙烯酸-(4-羟甲基环己基)甲酯组成的组中的至少任意一种。
另外,所述具有自由基反应性碳碳双键的异氰酸酯化合物,优选为选自2-甲基丙烯酰氧乙基异氰酸酯或者2-丙烯酰氧乙基异氰酸酯的至少任意一种。
另外,所述聚合物的重均分子量优选在35万至100万的范围内。通过使重均分子量为35万以上,可以防止形成低分子量聚合物,由此,例如可以防止切割时从粘合剂层上粘贴的切割环上产生剥离。另外,可以防止紫外线照射后的交联不足,因此在从粘合剂层上剥离切割环(ダイシングリング)时,可以防止产生胶糊残留。另一方面,通过使重均分子量为100万以下,可以提高在基材上形成粘合剂层时的作业性。这是因为,粘合剂层的形成例如可以通过在基材上涂布包含所述聚合物的粘合剂组合物溶液后使其干燥来进行,如果聚合物的重均分子量超过100万,则粘合剂组合物溶液的粘度过大,因此该聚合物的聚合以及涂布时的作业性变差。
另外,优选所述粘合剂层的紫外线照射前的23℃下的拉伸弹性模量在0.4~3.5MPa的范围内,紫外线照射后的23℃下的拉伸弹性模量在7~100MPa的范围内。通过将紫外线照射前的拉伸弹性模量(23℃)设定为0.4MPa以上,使切割半导体晶片时半导体芯片的固定良好,结果,可以防止碎片的产生。另外,将切割环剥离时,可以防止产生胶糊残留。另一方面,通过将拉伸弹性模量(23℃)设定为3.5MPa以下,可以防止切割时产生芯片飞散。另外,通过将紫外线照射后的拉伸弹性模量(23℃)设定为7MPa以上,可以提高拾取性。
所述粘合剂层优选不含丙烯酸。由此,可以防止粘合剂层与芯片接合薄膜的反应或相互作用,可以进一步提高拾取性。
附图说明
图1是表示本发明的一个实施方式的切割/芯片接合薄膜的示意剖面图。
图2是表示本发明的另一实施方式的另一切割/芯片接合薄膜的示意剖面图。
图3是表示通过所述切割/芯片接合薄膜中的芯片接合薄膜安装半导体芯片的例子的示意剖面图。
符号说明
1 基材
2 粘合剂层
3 芯片接合薄膜
4 半导体晶片
5 半导体芯片
6 被粘物
7 焊线
8 密封树脂
9 隔片
10、11切割/芯片接合薄膜
具体实施方式
(切割/芯片接合薄膜)
参考图1和图2对本发明的实施方式进行说明。图1是表示本实施方式的切割/芯片接合薄膜的示意剖面图。图2是表示本实施方式的另一切割/芯片接合薄膜的示意剖面图。其中,省略了不需要说明的部分,并且存在为容易说明而扩大或缩小等进行图示的部分。
如图1所示,切割/芯片接合薄膜10的构成如下:具有:在基材1上设有粘合剂层2的切割薄膜和设置在该粘合剂层2上的芯片接合薄膜3。另外,本发明如图2所示,也可以是仅在半导体晶片粘贴部分上形成有芯片接合薄膜3’的构成。
所述基材1具有紫外线透射性,并且作为切割/芯片接合薄膜10、11的强度母体。例如可以列举:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-醋酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷(silicone)树脂、金属(箔)、纸等。
另外,作为基材1的材料,可以列举所述树脂的交联物等聚合物。所述塑料薄膜可以不拉伸而使用,也可以根据需要进行单轴或双轴拉伸处理后使用。利用经拉伸处理等而被赋予热收缩性的树脂片,通过在切割后使其基材1热收缩而降低粘合剂层2与芯片接合薄膜3、3’的胶粘面积,可以容易地回收半导体芯片。
为了提高与邻接层的密合性和保持性等,基材1的表面可以进行惯用的表面处理,例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离射线处理等化学或物理处理、底涂剂(例如,后述的粘合物质)涂布处理等。
所述基材1可以适当选择使用同种或异种材料,根据需要也可以将多种材料混合使用。另外,为了使基材1具有防静电性能,可以在所述基材1上设置包含金属、合金、它们的氧化物等的厚度约30~约500的导电物质的蒸镀层。基材1可以是单层或者两种以上的多层。
基材1的厚度没有特别限制,可以适当设定,一般为约5μm~约200μm。
所述粘合剂层2包含紫外线固化型粘合剂而构成。紫外线固化型粘合剂可以通过紫外线照射使其交联度增大而容易地降低其粘合力,通过仅对图2所示的粘合剂层2的与半导体晶片粘贴部分对应的部分2a照射紫外线,可以设置与其它部分2b的粘合力差。
另外,通过与图2所示的芯片接合薄膜3’对应地使紫外线固化型粘合剂层2固化,可以容易地形成粘合力显著下降的所述部分2a。由于固化而粘合力下降的所述部分2a上粘贴有芯片接合薄膜3’,因此粘合剂层2的所述部分2a与芯片接合薄膜3’的界面具有在拾取时容易剥离的性质。另一方面,未照射紫外线的部分具有充分的粘合力,形成所述部分2b。
如前所述,图1所示的切割/芯片接合薄膜10的粘合剂层2中,由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合薄膜3粘合,能够确保切割时的保持力。这样,紫外线固化型粘合剂可以在胶粘-剥离平衡良好的情况下支撑用于将半导体芯片固着到衬底等被粘物上的芯片接合薄膜3。图2所示的切割/芯片接合薄膜11的粘合剂层2中,所述部分2b可以固定切割环。切割环例如可以使用由不锈钢等金属制成的切割环或树脂制成的切割环。
所述紫外线固化型粘合剂使用具有自由基反应性碳碳双键等紫外线固化性官能团、并且显示粘合性的粘合剂。作为紫外线固化型粘合剂,例如,可以例示在丙烯酸类粘合剂中配合有紫外线固化性单体成分或低聚物成分的添加型紫外线固化型粘合剂。丙烯酸类粘合剂是以丙烯酸类聚合物为基础聚合物的粘合剂,从半导体芯片或玻璃等避忌污染的电子部件的超纯水或醇等有机溶剂的清洁洗涤性等方面考虑优选。
本发明中,作为所述丙烯酸类聚合物,可以列举使用丙烯酸酯作为主单体成分的丙烯酸类聚合物。作为所述丙烯酸酯,可以列举例如:丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链或支链烷基酯等)及丙烯酸环烷酯(例如,环戊酯、环己酯等)等。这些单体可以单独使用或者两种以上组合使用。
前述例示的丙烯酸酯中,在本发明中优选使用由化学式CH2=CHCOOR(式中,R为碳原子数6~10、更优选碳原子数8~9的烷基)表示的单体。碳原子数如果低于6则剥离力变得过大,有时拾取性下降。另一方面,碳原子数如果超过10则与芯片接合薄膜的胶粘性下降,结果,有时在切割时产生芯片飞散。另外,丙烯酸酯由化学式CH2=CHCOOR表示时,其含量相对于全部单体成分优选为50~91摩尔%、更优选80~87摩尔%。含量如果小于50摩尔则剥离力变得过大,有时拾取性下降。另一方面,如果超过91摩尔%则粘合性下降,有时在切割时产生芯片飞散。另外,所述化学式表示的单体中,特别优选丙烯酸-2-乙基己酯、丙烯酸异辛酯。
所述丙烯酸类聚合物含有能够与所述丙烯酸酯共聚的含羟基单体作为必须成分。作为含羟基单体,可以列举例如:(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或(甲基)丙烯酸-(4-羟甲基环己基)甲酯等。
所述含羟基单体的含量,相对于丙烯酸酯优选在10~30摩尔%的范围内,更优选在15~25摩尔%的范围内。含量如果低于10摩尔%则紫外线照射后的交联不足,切割时有时对粘合剂层上粘贴的切割环产生胶糊残留。另一方面,含量如果超过30摩尔%则粘合剂的极性变高,与芯片接合薄膜的相互作用增强,从而难以剥离。
所述丙烯酸类聚合物,为了改善凝聚力和耐热性等,根据需要可以含有与能够与所述丙烯酸烷基酯或环烷酯共聚的其它单体成分对应的单元。作为这样的单体成分,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;丙烯酰磷酸-2-羟基乙酯等含磷酸基单体;丙烯酰胺;丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。但是,所述含羧基单体的情况下,通过其羧基与芯片接合薄膜3中的环氧树脂中的环氧基反应,粘合剂层2与芯片接合薄膜3的边界面消失,有时两者的剥离性下降。因此,含羧基单体的使用量优选为全部单体成分的0~3重量%以下。另外,含羟基单体或含缩水甘油基单体也能够与环氧树脂中的环氧基反应,因此,优选与含羧基单体的情况同样地设定。另外,这些单体成分中,优选本发明的粘合剂层2不含丙烯酸。这是因为,丙烯酸物质扩散到芯片接合薄膜3中,使粘合剂层2与芯片接合薄膜3的边界面消失,有时使剥离性下降。
在此,所述丙烯酸类聚合物不含多官能单体作为共聚用单体成分。由此,消除多官能单体物质扩散到芯片接合薄膜中的情况,可以防止由于粘合剂层2与芯片接合薄膜3的边界面消失而导致的拾取性下降。
另外,所述丙烯酸类聚合物包含具有自由基反应性碳碳双键的异氰酸酯化合物作为必须成分。作为所述异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、2-丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。
所述具有自由基反应性碳碳双键的异氰酸酯化合物的含量,相对于含羟基单体优选在70~90摩尔%的范围内,更优选在75~85摩尔%的范围内。含量如果低于70摩尔%则紫外线照射后的交联不足,切割时有时对粘贴在粘合剂层上的切割环产生胶糊残留。另一方面,含量如果超过90摩尔%则粘合剂的极性变高,与芯片接合薄膜的相互作用增强,由此使剥离变得困难,拾取性下降。
所述丙烯酸类聚合物可以通过将单一单体或两种以上单体的混合物聚合而得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等的任意方式进行。从防止污染洁净的被粘物等观点考虑,优选低分子量物质的含量小。从该观点考虑,丙烯酸类聚合物的重均分子量优选为约35万至约100万、更优选约45万至约80万。
另外,为了调节紫外线照射前的粘合力和紫外线照射后的粘合力,所述粘合剂中也可以适当使用外部交联剂。作为外部交联方法的具体手段,可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂进行反应的方法。使用外部交联剂的情况下,其使用量通过与欲交联的基础聚合物的平衡、以及作为粘合剂的使用用途来适当确定。一般相对于所述基础聚合物100重量份优选配合约20重量份以下、更优选0.1~10重量份。另外,粘合剂中除所述成分之外,根据需要还可以使用现有公知的各种增粘剂、抗老化剂等添加剂。
作为配合的所述紫外线固化性单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,紫外线固化性的低聚物成分可以列举氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量在约100至约30000的范围内是适当的。紫外线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类适当确定能够使粘合剂层的粘合力下降的量。一般而言,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约5重量份至约500重量份、优选约40重量份至约150重量份。
另外,作为紫外线固化型粘合剂,除前面说明过的添加型紫外线固化型粘合剂以外,还可以列举:使用在聚合物侧链或主链中或者主链末端具有自由基反应性碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂不需要含有或者大部分不含有作为低分子量成分的低聚物成分等,因此低聚物成分等不会随时间推移在粘合剂中移动,可以形成稳定层结构的粘合剂层。
所述具有自由基反应性碳碳双键的基础聚合物,可以没有特别限制地使用具有自由基反应性碳碳双键并且具有粘合性的基础聚合物。作为这样的基础聚合物,优选以丙烯酸类聚合物为基本骨架的基础聚合物。作为丙烯酸类聚合物的基本骨架,可以列举前面例示的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入自由基反应性碳碳双键的方法没有特别限制,可以采用各种方法,从分子设计方面而言在聚合物侧链中引入自由基反应性碳碳双键是比较容易的。例如可以列举:预先将具有羟基的单体与丙烯酸类聚合物共聚后,使具有能够与该羟基反应的异氰酸酯基及自由基反应性碳碳双键的异氰酸酯化合物在保持自由基反应性碳碳双键的紫外线固化性的情况下与所得共聚物进行缩合或加成反应的方法。作为具有异氰酸酯基和自由基反应性碳碳双键的异氰酸酯化合物,可以列举前面例示的那些。另外,作为丙烯酸类聚合物,可以使用将前面例示的含羟基单体或2-羟乙基乙烯基醚、4-羟丁基乙烯基醚、二乙二醇单乙烯基醚等醚类化合物等共聚而得到的丙烯酸类聚合物。
所述内在型紫外线固化型粘合剂,可以单独使用所述具有自由基反应性碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合紫外线固化性单体成分或低聚物成分。紫外线固化性低聚物成分等通常相对于基础聚合物100重量份在30重量份的范围内,优选在0~10重量份的范围内。
所述紫外线固化型粘合剂中,在通过紫外线等进行固化时优选含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2’-二甲氧基-2-苯基苯乙酮、2,2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉基-1-丙酮等苯乙酮类化合物;苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物;联苯酰二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯甲酰基苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤代酮;酰基氧化膦;酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份例如为约0.05重量份至约20重量份。
另外,作为紫外线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中公开的、包含具有两个以上不饱合键的加聚性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
紫外线固化型粘合剂层2的形成可以通过在基材1上形成紫外线固化型粘合剂层2,或者将设置在隔片上的粘合剂层2转印到基材1上来进行。
在切割/芯片接合薄膜10的粘合剂层2中,对粘合剂层2的一部分进行紫外线照射使所述部分2a的粘合力<其它部分2b的粘合力。即,可以使用对基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或者一部分进行遮光的基材,在其上形成紫外线固化型粘合剂层2后进行紫外线照射,使与半导体晶片粘贴部分3a对应的部分固化,从而形成粘合力下降的所述部分2a。作为遮光材料,可以通过印刷或蒸镀等在支撑薄膜上制作能够形成光掩模的遮光材料。另外,所述紫外线照射的积分光量优选为50~500mJ/cm2。通过使积分光量在所述范围内,在切割时保持能够防止半导体芯片产生芯片飞散程度的粘合性,并且在拾取时得到良好的拾取性。由此,可以有效地制造本发明的切割/芯片接合薄膜10。
另外,紫外线照射时因氧而产生固化障碍时,优选从紫外线固化型粘合剂层2的表面隔绝氧(空气)。作为该方法,可以列举例如:用隔片将粘合剂层2的表面覆盖的方法或者在氮气氛围中进行紫外线等的照射的方法等。
粘合剂层2的厚度没有特别限制,从同时实现防止芯片切割面的缺陷和粘合层的固定保持等观点考虑,优选为约1μm至约50μm。优选2μm~30μm、更优选5μm~25μm。
芯片接合薄膜3例如可以仅由单层胶粘剂层构成。另外,也可以将玻璃化转变温度不同的热塑性树脂、热固化温度不同的热固性树脂适当组合而形成两层以上的多层结构。另外,在半导体晶片的切割工序中使用切削水,因此芯片接合薄膜3吸湿,有时含水率达到常态以上。如果在这样的高含水率的状态下胶粘在衬底等上,则在后固化阶段胶粘界面处滞留水蒸汽,有时产生翘起。因此,作为芯片胶粘用胶粘剂,通过形成由芯片胶粘剂夹住高透湿性芯材的结构,在后固化阶段水蒸汽透过薄膜而扩散,从而可以避免所述问题。从该观点考虑,芯片接合薄膜3可以采用在芯材的单面或双面形成胶粘剂层的多层结构。
作为所述芯材,可以列举:薄膜(例如聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
本发明的芯片接合薄膜3,以环氧树脂作为主成分而形成。环氧树脂中使半导体元件腐蚀的离子性杂质等的含量少,因此优选。作为所述环氧树脂,只要是作为胶粘剂组合物通常使用的环氧树脂则没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四苯酚基乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中,特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型环氧树脂或四苯酚基乙烷型环氧树脂。这是因为,这些环氧树脂作为固化剂与酚树脂的反应性好,并且耐热性等优良。
另外,芯片接合薄膜3中根据需要可以组合使用其它热固性树脂或热塑性树脂。作为所述热固性树脂,可以列举:酚树脂、氨基树脂、不饱和聚酯树脂、聚氨酯树脂、聚硅氧烷树脂、或者热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。另外,作为环氧树脂的固化剂优选酚树脂。
另外,所述酚树脂作为所述环氧树脂的固化剂起作用,可以列举例如:苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚树脂、甲阶酚醛树脂型酚树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚树脂可以单独使用或者两种以上组合使用。这些酚树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚树脂的配合比例,例如以相对于所述环氧树脂成分中的环氧基1当量酚树脂中的羟基为0.5~2.0当量的比例进行配合是适当的。更优选0.8~1.2当量。即,这是因为,两者的配合比例如果在所述范围以外,则固化反应不充分,环氧树脂固化物的特性容易变差。
作为所述热塑性树脂,可以列举:天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6或尼龙6,6等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者含氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中,特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸类树脂。
作为所述丙烯酸类树脂,没有特别限制,可以列举以一种或两种以上具有碳原子数30以下、特别是碳原子数4~18的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯为成分的聚合物等。作为所述烷基,可以列举例如:甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者十二烷基等。
另外,作为形成所述聚合物的其它单体,没有特别限制,可以列举例如:丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体;马来酸酐或衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;或者丙烯酰磷酸-2-羟基乙酯等含磷酸基单体。
芯片接合薄膜3的胶粘剂层中,为了预先具有某种程度的交联,在制作时优选添加能够与聚合物的分子链末端的官能团等反应的多官能化合物作为交联剂。由此,可以提高高温下的胶粘特性,改善耐热性。
另外,芯片接合薄膜3的胶粘剂层中根据需要可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。作为所述阻燃剂,可以列举例如:三氧化锑、五氧化锑、溴化环氧树脂等。这些物质可以单独使用或者两种以上组合使用。作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
芯片接合薄膜3的厚度没有特别限制,例如为约5μm至约100μm、优选约5μm至约50μm。
可以使切割/芯片接合薄膜10、11具有防静电性能。由此,可以防止其胶粘时及剥离时等产生静电或者电路由于静电导致的工件(半导体晶片等)带电而遭破坏等。防静电性能的赋予,可以通过在基材1、粘合剂层2或芯片接合薄膜3中添加防静电剂或导电物质的方法、在基材1上附设包含电荷转移络合物或金属膜等的导电层等适当方式来进行。作为这些方式,优选不易产生可能导致半导体晶片变质的杂质离子的方式。作为为了赋予导电性、提高导热性等目的而配合的导电物质(导电填料),可以列举:银、铝、金、铜、镍、导电合金等的球状、针状、片状金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。但是,从不漏电的观点考虑,优选所述芯片接合薄膜3、3’为非导电性。
所述切割/芯片接合薄膜10、11的芯片接合薄膜3、3’优选由隔片保护(未图示)。隔片具有作为在供给实际使用之前保护芯片接合薄膜3、3’的保护材料的功能。另外,隔片还可以作为向粘合剂层2上转印芯片接合薄膜3、3’时的支撑基材使用。隔片在向切割/芯片接合薄膜的芯片接合膜3、3’上粘贴工件时剥离。作为隔片,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯,或者由含氟剥离剂、丙烯酸长链烷基酯类剥离剂等剥离剂进行了表面涂敷的塑料薄膜或纸等。
(切割/芯片接合薄膜的制造方法)
以下,以切割/芯片接合薄膜10为例对本发明的切割/芯片接合薄膜的制造方法进行说明。首先,基材1可以通过现有公知的制膜方法制成膜。作为该制膜方法,可以列举例如:压延制膜法、有机溶剂中的流延法、密闭体系中的挤出吹塑法、T形模头挤出法、共挤出法、干式层压法等。
然后,在基材1上涂布包含粘合剂的组合物并干燥(根据需要加热交联)而形成粘合剂层2。作为涂布方式可以列举:辊涂、丝网涂布、凹版涂布等。另外,涂布可以直接在基材1上进行,也可以涂布到表面进行剥离处理后的剥离纸等上后转印到基材1上。
然后,将用于形成芯片接合薄膜3的形成材料涂布在剥离纸上至预定厚度,进而在预定条件下干燥而形成涂层。通过将该涂层转印到所述粘合剂层2上,形成芯片接合薄膜3。另外,通过将形成材料直接涂布到所述粘合剂层2上后,在预定条件下干燥也可以形成芯片接合薄膜3。由此,得到本发明的切割/芯片接合薄膜10。
(半导体装置的制造方法)
本发明的切割/芯片接合薄膜10、11,在将芯片接合薄膜3、3’上任意设置的隔片适当剥离后以下述方式使用。以下,参考图3以使用切割/芯片接合薄膜11的情况为例进行说明。
首先,将半导体晶片4压接在切割/芯片接合薄膜11中的芯片接合薄膜3’上,使其胶粘保持而固定(安装工序)。本工序在用压接辊等挤压手段挤压的同时进行。
然后,进行半导体晶片4的切割。由此,将半导体晶片4切割为预定的尺寸而小片化,制造半导体芯片5。切割例如可以从半导体晶片4的电路面一侧按照常规方法进行。另外,本工序中,例如可以采用切入至切割/芯片接合薄膜10处的、称为全切的切割方式等。本工序中使用的切割装置没有特别限制,可以使用现有公知的切割装置。另外,半导体晶片由于利用切割/芯片接合薄膜10进行了胶粘固定,因此不仅可以抑制芯片缺陷或芯片飞散,也可以抑制半导体晶片4的破损。
为了将在切割/芯片接合薄膜10上胶粘固定的半导体芯片剥离,进行半导体芯片5的拾取。拾取方法没有特别限制,可以使用现有公知的各种方法。例如,可以列举:用针从切割/芯片接合薄膜10一侧将各个半导体芯片5上推,通过拾取装置拾取上推的半导体芯片5的方法等。
在此,由于粘合剂层2为紫外线固化型,因此拾取在对该粘合剂层2照射紫外线后进行。由此,粘合剂层2对芯片接合薄膜3a的粘合力下降,使半导体芯片5容易剥离。结果,可以在不损伤半导体芯片的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制,根据需要适当设定即可。例如,以紫外线照射积分光量计,优选为50~500mJ/cm2。即使在所述积分光量的范围内,本发明的芯片接合薄膜也不会因紫外线照射使交联过度进行而难以剥离,显示良好的拾取性。另外,作为紫外线照射时使用的光源,可以使用前述光源。
拾取的半导体芯片5通过芯片接合薄膜3a胶粘固定在被粘物6上(芯片接合)。被粘物6载置于加热台(heat block)9上。作为被粘物6,可以列举引线框、TAB薄膜、衬底或者另外制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物、也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底,可以使用现有公知的衬底。另外,作为所述引线框,可以使用Cu引线框、42合金引线框等金属引线框或者由玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等制成的有机衬底。但是,本发明不限于这些,也包括在安装半导体元件,与半导体元件电连接后可以使用的电路衬底。
芯片接合薄膜3为热固型时,通过加热固化将半导体芯片5胶粘固定在被粘物6上,提高耐热强度。另外,将半导体芯片5通过半导体晶片粘贴部分3a胶粘固定到衬底等上而形成的材料可以供给回流工序。之后,进行将衬底的端子部(内部端子)的前端与半导体芯片5上的电极焊盘(未图示)通过焊线7进行电连接的丝焊,再用密封树脂8密封半导体芯片,并将该密封树脂8后固化。由此,制作本实施方式的半导体装置。
实施例
以下,更具体地举例说明本发明的优选实施例。但是,这些实施例中记载的材料或配合量等,如果没有特别限定的记载,则本发明的范围并不仅限于此,这些不过是举例说明而已。另外,各例中,“份”如果没有特别说明则均为重量基准。
(实施例1)
<切割薄膜的制作>
在具有冷凝管、氮气导入管、温度计和搅拌装置的反应容器中,加入88.8份丙烯酸-2-乙基己酯(以下称为“2EHA”)、11.2份丙烯酸-2-羟基乙酯(以下称为“HEA”)、0.2份过氧化苯甲酰及65份甲苯,在氮气流中在61℃下进行6小时聚合处理,得到重均分子量85万的丙烯酸类聚合物A。重均分子量如下所述。2EHA与HEA的摩尔比为100摩尔∶20摩尔。
在该丙烯酸类聚合物A中加入12份(相对于HEA为80摩尔%)2-甲基丙烯酰氧乙基异氰酸酯(以下称为“MOI”),在空气气流中在50℃下进行48小时加成反应处理,得到丙烯酸类聚合物A’。
然后,在100份丙烯酸类聚合物A’中加入8份多异氰酸酯化合物(商品名“コロネ一トL”,日本聚氨酯株式会社制)和5份光聚合引发剂(商品名“イルガキユア651”,汽巴精化公司制),制作粘合剂溶液。
将上述制备的粘合剂溶液涂布到PET剥离衬垫的进行聚硅氧烷处理后的面上,在120℃加热交联2分钟,形成厚度10μm的粘合剂层。然后,在该粘合剂层表面粘贴厚度100μm的聚烯烃薄膜。之后,在50℃保存24小时后,制作本实施例的切割薄膜。
<芯片接合薄膜的制作>
将100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制,商品名:パラクロンW-197CM)、59份环氧树脂1(JER株式会社制,商品名:Epicoat 1004)、53份环氧树脂2(JER株式会社制,商品名:Epicoat 827)、121份酚树脂(三井化学株式会社制,商品名:ミレツクスXLC-4L)和222份球状二氧化硅(アドマテツクス株式会社制,商品名:SO-25R)溶解于甲乙酮中,制备成浓度23.6重量%。
将该胶粘剂组合物的溶液涂布到作为剥离衬垫(隔片)的经聚硅氧烷脱模处理的厚度38μm的由聚对苯二甲酸乙二醇酯薄膜形成的脱膜处理薄膜上,然后在130℃干燥2分钟。由此,制作厚度25μm的芯片接合薄膜。进而,将芯片接合薄膜转印到上述切割薄膜的粘合剂层一侧,得到本实施例的切割/芯片接合薄膜。
<重均分子量Mw的测定>
重均分子量Mw的测定通过GPC(凝胶渗透色谱法)进行。测定条件如下所述。另外,重均分子量通过聚苯乙烯换算来计算。
测定装置:HLC-8120GPC(制品名,东曹公司制)
柱:TSKgel GMH-H(S)×2(商品编号,东曹公司制)
流量:0.5ml/分钟
注射量:100μl
柱温:40℃
洗脱液:THF
注射试样浓度:0.1重量%
检测器:差示折射计
(实施例2~15)
各实施例2~15中,变为下表1所示的组成及含量,除此以外,与上述实施例1同样操作,制作切割/芯片接合薄膜。
另外,表1及后述的表2中记载的简称的含义如下所述。
2EHA:丙烯酸-2-乙基己酯
i-OA:丙烯酸异辛酯
i-NA:丙烯酸异壬酯
BA:丙烯酸正丁酯
LA:丙烯酸月桂酯
AA:丙烯酸
HEA:丙烯酸-2-羟基乙酯
4HBA:丙烯酸-4-羟基丁酯
AOI:2-丙烯酰氧乙基异氰酸酯
C/L:多异氰酸酯化合物(商品名“コロネ一トL”,日本聚氨酯株式会社制)
T/C:环氧类交联剂(商品名“テトラツドC”,三菱瓦斯化学公司制)
(比较例1~9)
各比较例1~9中,变为下表2所示的组成及含量,除此以外,与上述实施例1同样操作,制作切割/芯片接合薄膜。
(切割)
使用各实施例及比较例的各切割/芯片接合薄膜,按照以下要领实际进行半导体晶片的切割,并评价各切割/芯片接合薄膜的性能。
将半导体晶片(直径8英寸、厚度0.6mm)进行背面研磨处理,使用厚度0.15mm的镜面晶片作为工件。从切割/芯片接合薄膜上剥离隔片后,在40℃下在其芯片接合薄膜上用辊压接镜面晶片使其粘贴,并进行切割。另外,切割是进行全切,得到1mm见方的芯片尺寸。对切割后的半导体晶片及切割/芯片接合薄膜,确认有无芯片飞散。芯片飞散评价是:半导体芯片即使有一个飞散时也评价为×,无飞散时评价为○。晶片磨削条件、粘贴条件及切割条件如下所述。
<晶片磨削条件>
磨削装置:デイスコ公司制,DFG-8560
半导体晶片:8英寸直径(从厚度0.6mm背面磨削至0.15mm)
<粘贴条件>
粘贴装置:日东精机制,MA-3000II
粘贴速度:10mm/分钟
粘贴压力:0.15MPa
粘贴时的平台温度(ステ一ジ温度):40℃
<切割条件>
切割装置:デイスコ公司制,DFD-6361
切割环:2-8-1(デイスコ公司制)
切割速度:80mm/秒
切割刀片:
Z1:デイスコ公司制2050HEDD
Z2:デイスコ公司制2050HEBB
切割刀片转速:
Z1:40000rpm
Z2:40000rpm
刀片高度:
Z1:0.215mm(取决于半导体晶片的厚度(晶片厚度为75μm时,为0.170mm))
Z2:0.085mm
切割方式:A方式/阶段式切割
晶片芯片尺寸:1.0mm见方
(拾取)
使用各实施例及比较例的各切割/芯片接合薄膜,按照以下要领在实际进行半导体晶片的切割后进行拾取,并评价各切割/芯片接合薄膜的性能。
将半导体晶片(直径8英寸、厚度0.6mm)进行背面研磨处理,使用厚度0.075mm的镜面晶片作为工件。从切割/芯片接合薄膜上剥离隔片后,在40℃下在其芯片接合薄膜上用辊压接镜面晶片使其粘贴,并进行切割。另外,切割是进行全切,得到10mm见方的芯片尺寸。
然后,对各切割/芯片接合薄膜进行紫外线照射,并进行将其拉伸,使各芯片间达到预定间隔的扩张(expand)工序。进而,从各切割/芯片接合薄膜的基材一侧通过用针上推的方式拾取半导体芯片,进行拾取性评价。具体而言,连续地拾取400个半导体芯片,在后述的条件A和B下进行时的成功率均为100%时评价为◎,在条件A下进行时的成功率为100%、并且在条件B下进行时的成功率不为100%时评价为○,在条件A和B下成功率均不为100%时评价为×。
<晶片磨削条件>
磨削装置:デイスコ公司制,DFG-8560
半导体晶片:8英寸直径(从厚度0.6mm背面磨削至0.075mm)
<粘贴条件>
粘贴装置:日东精机制,MA-3000II
粘贴速度:10mm/分钟
粘贴压力:0.15MPa
粘贴时的平台温度:40℃
<切割条件>
切割装置:デイスコ公司制,DFD-6361
切割环:2-8-1(デイスコ公司制)
切割速度:80mm/秒
切割刀片:
Z1:デイスコ公司制2050HEDD
Z2:デイスコ公司制2050HEBB
切割刀片转速:
Z1:40000rpm
Z2:40000rpm
刀片高度:
Z1:0.170mm(取决于半导体晶片厚度(晶片厚度为75μm时,为0.170mm))
Z2:0.085mm
切割方式:A方式/阶段式切割
晶片芯片尺寸:10.0mm见方
<紫外线照射条件>
紫外线(UV)照射装置:日东精机(商品名、UM-810制)
紫外线照射积分光量:300mJ/cm2
另外,紫外线照射从聚烯烃薄膜一侧进行。
<拾取条件>
关于拾取条件,分别通过下表3所示的条件A及条件B进行。
表3
条件A | 条件B | |
针 | 全长10mm、直径0.7mm、锐角15度、前端R350μm | 全长10mm、直径0.7mm、锐角15度、前端R350μm |
针数(根) | 9 | 5 |
针上推量(μm) | 350 | 250 |
针上推速度(mm/秒) | 5 | 5 |
夹头保持时间(毫秒) | 200 | 200 |
扩张(mm/秒) | 3 | 3 |
(拉伸弹性模量的测定方法)
在将样品尺寸设定为初始长度10mm、截面积0.1~0.5mm2,测定温度23℃、夹盘间距50mm、拉伸速度50mm/分钟的测定条件下,沿MD方向或TD方向进行拉伸试验,测定各方向上的样品的伸长变化量(mm)。结果,在得到的S-S曲线的初期上升部分画切线,用该切线相当于100%伸长率时的拉伸强度除以基材薄膜的截面积,得到拉伸弹性模量。另外,关于紫外线照射后的拉伸弹性模量的测定,通过前述照射条件从聚烯烃薄膜一侧照射紫外线后进行。
(切割环的胶糊残留)
从切割环上剥离切割薄膜,通过目测确认切割环上是否产生胶糊残留。确认到胶糊残留时评价为×,未确认到时评价为○。
Claims (5)
1.一种切割/芯片接合薄膜,具备在基材上具有粘合剂层的切割薄膜和设置在该粘合剂层上的芯片接合薄膜,其特征在于,
所述粘合剂层含有包含作为主单体的丙烯酸酯、相对于丙烯酸酯含量在10~30摩尔%范围内的含羟基单体和相对于含羟基单体含量在70~90摩尔%范围内的具有自由基反应性碳碳双键的异氰酸酯化合物而构成的聚合物,
所述丙烯酸酯为CH2=CHCOOR,式中,R为碳原子数6~10的烷基,
所述聚合物的重均分子量在35万至100万的范围内,
所述粘合剂层的紫外线照射前的23℃下的拉伸弹性模量在0.4~3.5MPa的范围内,
所述芯片接合薄膜含有环氧树脂而构成。
2.如权利要求1所述的切割/芯片接合薄膜,其特征在于,
所述含羟基单体为选自由(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯和(甲基)丙烯酸-(4-羟甲基环己基)甲酯组成的组中的至少任意一种。
3.如权利要求1所述的切割/芯片接合薄膜,其特征在于,
所述具有自由基反应性碳碳双键的异氰酸酯化合物为选自2-甲基丙烯酰氧乙基异氰酸酯或2-丙烯酰氧乙基异氰酸酯的至少任意一种。
4.如权利要求1所述的切割/芯片接合薄膜,其特征在于,
紫外线照射后的23℃下的拉伸弹性模量在7~100MPa的范围内。
5.如权利要求1所述的切割/芯片接合薄膜,其特征在于,
所述粘合剂层不含丙烯酸。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007291056 | 2007-11-08 | ||
JP2007-291056 | 2007-11-08 | ||
JP2007-314899 | 2007-12-05 | ||
JP2007314899A JP4717051B2 (ja) | 2007-11-08 | 2007-12-05 | ダイシング・ダイボンドフィルム |
PCT/JP2008/069798 WO2009060787A1 (ja) | 2007-11-08 | 2008-10-30 | ダイシング・ダイボンドフィルム |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012103610185A Division CN102911618A (zh) | 2007-11-08 | 2008-10-30 | 切割/芯片接合薄膜 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101855710A CN101855710A (zh) | 2010-10-06 |
CN101855710B true CN101855710B (zh) | 2012-11-07 |
Family
ID=40866966
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012103610185A Pending CN102911618A (zh) | 2007-11-08 | 2008-10-30 | 切割/芯片接合薄膜 |
CN2008801150899A Active CN101855710B (zh) | 2007-11-08 | 2008-10-30 | 切割/芯片接合薄膜 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012103610185A Pending CN102911618A (zh) | 2007-11-08 | 2008-10-30 | 切割/芯片接合薄膜 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100233409A1 (zh) |
JP (3) | JP4717051B2 (zh) |
KR (3) | KR101420903B1 (zh) |
CN (2) | CN102911618A (zh) |
DE (1) | DE112008003005T5 (zh) |
TW (2) | TWI428419B (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4717086B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717085B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4553400B2 (ja) * | 2008-02-18 | 2010-09-29 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4718629B2 (ja) * | 2008-08-04 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP5811514B2 (ja) * | 2009-09-30 | 2015-11-11 | 日立化成株式会社 | フィルム状接着剤 |
JP5681374B2 (ja) * | 2010-04-19 | 2015-03-04 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム |
JP5367656B2 (ja) | 2010-07-29 | 2013-12-11 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム及びその用途 |
JP5520785B2 (ja) * | 2010-11-10 | 2014-06-11 | 日東電工株式会社 | 絶縁テープ |
JP6166901B2 (ja) * | 2010-12-10 | 2017-07-19 | 日立化成株式会社 | 光学用粘着材樹脂組成物、光学用粘着材シート、画像表示装置、光学用粘着材シートの製造方法及び画像表示装置の製造方法 |
JP5687897B2 (ja) * | 2010-12-28 | 2015-03-25 | 日東電工株式会社 | 放射線硬化型粘着剤組成物及び粘着シート |
JP5781302B2 (ja) * | 2010-12-28 | 2015-09-16 | 日東電工株式会社 | 放射線硬化型粘着剤組成物及び粘着シート |
JP5996861B2 (ja) * | 2010-12-30 | 2016-09-21 | チェイル インダストリーズ インコーポレイテッド | ダイシングダイボンディングフィルム用粘着剤組成物 |
KR102051272B1 (ko) * | 2011-03-28 | 2019-12-03 | 히타치가세이가부시끼가이샤 | 다층 수지 시트, 수지 시트 적층체, 다층 수지 시트 경화물 및 그 제조 방법, 금속박이 형성된 다층 수지 시트, 그리고 반도체 장치 |
JP6000949B2 (ja) | 2011-06-27 | 2016-10-05 | デンカ株式会社 | 粘着シート |
CN104640899B (zh) * | 2012-09-18 | 2017-05-24 | 巴斯夫欧洲公司 | 含有被活性(甲基)丙烯酸端基封端的聚氨酯骨架的聚合物及其用作粘合剂的用途 |
JP5294365B1 (ja) * | 2012-09-27 | 2013-09-18 | 古河電気工業株式会社 | 放射線硬化型ダイシング用粘着テープ |
JP6817813B2 (ja) * | 2014-09-22 | 2021-01-20 | リンテック株式会社 | 樹脂層付きワーク固定シート |
EP3348623B1 (en) * | 2015-09-10 | 2023-10-11 | Mitsui Chemicals Tohcello, Inc. | Pressure-sensitive adhesive composition, process for producing same, and pressure-sensitive adhesive film |
JP6721398B2 (ja) * | 2016-04-22 | 2020-07-15 | 日東電工株式会社 | ダイシングダイボンディングフィルム、ダイシングダイボンディングテープおよび半導体装置の製造方法 |
JP2018019022A (ja) * | 2016-07-29 | 2018-02-01 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム、及び、半導体装置の製造方法 |
CN106206397B (zh) * | 2016-08-05 | 2020-02-07 | 厦门市三安光电科技有限公司 | 用于半导体器件的薄膜及半导体器件的制作方法 |
CN108780782A (zh) * | 2017-01-25 | 2018-11-09 | 深圳市汇顶科技股份有限公司 | 晶片封装结构及封装方法 |
JP6788549B2 (ja) * | 2017-06-05 | 2020-11-25 | 信越化学工業株式会社 | 基板加工用仮接着フィルムロール、薄型基板の製造方法 |
JP7079609B2 (ja) * | 2018-01-19 | 2022-06-02 | 日東電工株式会社 | 電磁波シールド形成用マスキングテープ |
WO2019220599A1 (ja) * | 2018-05-17 | 2019-11-21 | 日立化成株式会社 | ダイシング・ダイボンディング一体型フィルム及びその製造方法、並びに、半導体装置の製造方法 |
CN109181571B (zh) * | 2018-06-14 | 2021-01-29 | 深圳深汕特别合作区昌茂粘胶新材料有限公司 | 一种uv光照降低粘力的不干胶及其制备方法 |
JP7349261B2 (ja) * | 2019-05-28 | 2023-09-22 | 日東電工株式会社 | ダイシングテープ、及び、ダイシングダイボンドフィルム |
TWI749590B (zh) * | 2019-06-13 | 2021-12-11 | 南韓商Lg化學股份有限公司 | 非導電膜及半導體層合板的製法 |
JP2022178223A (ja) | 2021-05-19 | 2022-12-02 | 日東電工株式会社 | 粘着テープ、ダイシングダイボンドフィルム、及び、半導体装置の製造方法 |
JP2022178221A (ja) | 2021-05-19 | 2022-12-02 | 日東電工株式会社 | ダイシングダイボンドフィルム及び半導体装置の製造方法 |
JP2023012204A (ja) | 2021-07-13 | 2023-01-25 | 日東電工株式会社 | 熱硬化型樹脂シート、及び、ダイシングダイボンドフィルム |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005355A (ja) * | 2003-06-10 | 2005-01-06 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
Family Cites Families (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4619867A (en) * | 1983-06-14 | 1986-10-28 | Minnesota Mining And Manufacturing Company | Azlactone-containing pressure-sensitive adhesives |
US4961804A (en) * | 1983-08-03 | 1990-10-09 | Investment Holding Corporation | Carrier film with conductive adhesive for dicing of semiconductor wafers and dicing method employing same |
IE55238B1 (en) | 1983-08-03 | 1990-07-04 | Nat Starch Chem Corp | Carrier film with conductive adhesive for dicing of semiconductor wafers |
JPH0616524B2 (ja) | 1984-03-12 | 1994-03-02 | 日東電工株式会社 | 半導体ウエハ固定用接着薄板 |
US5714029A (en) * | 1984-03-12 | 1998-02-03 | Nitto Electric Industrial Co., Ltd. | Process for working a semiconductor wafer |
JP2678655B2 (ja) | 1989-03-20 | 1997-11-17 | 日東電工株式会社 | 半導体チップ固着キャリヤの製造方法及びウエハ固定部材 |
JP3257391B2 (ja) * | 1996-03-18 | 2002-02-18 | 東洋インキ製造株式会社 | インクジェット記録液 |
US5902678A (en) * | 1997-04-01 | 1999-05-11 | Nitto Denko Corporation | Pressure-sensitive adhesive or pressure-sensitive adhesive tape for foreign-matter removal |
JP4053656B2 (ja) * | 1998-05-22 | 2008-02-27 | リンテック株式会社 | エネルギー線硬化型親水性粘着剤組成物およびその利用方法 |
JP4230080B2 (ja) * | 2000-02-18 | 2009-02-25 | リンテック株式会社 | ウエハ貼着用粘着シート |
JP2002226796A (ja) * | 2001-01-29 | 2002-08-14 | Hitachi Chem Co Ltd | ウェハ貼着用粘着シート及び半導体装置 |
JP4812963B2 (ja) * | 2001-05-18 | 2011-11-09 | リンテック株式会社 | 半導体ウエハ加工用粘着シートおよび半導体ウエハの加工方法 |
JP4803778B2 (ja) * | 2001-07-03 | 2011-10-26 | 日東電工株式会社 | 再剥離型粘着剤および再剥離型粘着シート |
JP4869517B2 (ja) * | 2001-08-21 | 2012-02-08 | リンテック株式会社 | 粘接着テープ |
JP2003096412A (ja) * | 2001-09-26 | 2003-04-03 | Nitto Denko Corp | 半導体部品ダイシング用粘着シートおよび半導体部品の製造方法 |
JP2004231932A (ja) * | 2002-12-02 | 2004-08-19 | Nitto Denko Corp | 接着剤組成物、接着フィルムおよびこれを用いた半導体装置 |
JP4107417B2 (ja) * | 2002-10-15 | 2008-06-25 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP4283596B2 (ja) * | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
JP4500022B2 (ja) * | 2003-07-25 | 2010-07-14 | 日東電工株式会社 | 光学部材用粘着剤組成物、光学部材用粘着剤層、粘着型光学部材及びその製造方法、並びに画像表示装置 |
JP2005116920A (ja) * | 2003-10-10 | 2005-04-28 | Nitto Denko Corp | 半導体加工用粘着シートおよび半導体加工方法 |
JP4275522B2 (ja) * | 2003-12-26 | 2009-06-10 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2005239884A (ja) * | 2004-02-26 | 2005-09-08 | Nitto Denko Corp | 半導体ウエハ加工用粘着シート |
WO2005087887A1 (ja) * | 2004-03-11 | 2005-09-22 | Nitto Denko Corporation | 加熱剥離型粘着シートおよび該加熱剥離型粘着シートを用いた被着体の加工方法 |
EP1724320B1 (en) * | 2004-03-11 | 2010-07-21 | Nitto Denko Corporation | Heat-peelable pressure-sensitive adhesive sheet and method of processing adherend with the heat-peelable pressure-sensitive adhesive sheet |
JP2005263876A (ja) * | 2004-03-16 | 2005-09-29 | Lintec Corp | 両面粘着シートおよび脆質部材の転写方法 |
JP4443962B2 (ja) * | 2004-03-17 | 2010-03-31 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2005298641A (ja) * | 2004-04-09 | 2005-10-27 | Hitachi Chem Co Ltd | 表面保護用粘着フィルム |
TW200617124A (en) * | 2004-06-01 | 2006-06-01 | Nitto Denko Corp | Pressure-sensitive adhesive composition, pressure-sensitive adhesive sheet and surface protecting film |
US7698656B2 (en) * | 2004-07-29 | 2010-04-13 | International Business Machines Corporation | Methods, apparatus and computer programs supporting shortcuts across a plurality of devices |
JP4776189B2 (ja) * | 2004-08-03 | 2011-09-21 | 古河電気工業株式会社 | ウエハ加工用テープ |
DE102004037910B4 (de) * | 2004-08-05 | 2015-05-07 | Tesa Se | Reversibles Verschlusssystem zum Verschließen von Gegenständen wie Beutel, Tüten, Verpackungen oder ähnlichen mit zwei Haftstreifen |
USD549189S1 (en) * | 2004-09-21 | 2007-08-21 | Nitto Denko Corporation | Dicing die-bonding film |
JP2006165074A (ja) * | 2004-12-03 | 2006-06-22 | Sumitomo Bakelite Co Ltd | ダイシングシート機能付きダイアタッチフィルム及びそれを用いた半導体装置の製造方法 |
JP2006303472A (ja) * | 2005-03-23 | 2006-11-02 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
TWI402325B (zh) * | 2005-05-12 | 2013-07-21 | Nitto Denko Corp | 切割用黏著片以及使用此黏著片的切割方法 |
JP2007084722A (ja) * | 2005-09-22 | 2007-04-05 | Nitto Denko Corp | 粘着シートとその製造方法、及び、製品の加工方法 |
JP4799205B2 (ja) * | 2006-02-16 | 2011-10-26 | 日東電工株式会社 | 活性面貼付ダイシング用粘着テープ又はシートおよび被加工物の切断片のピックアップ方法 |
JP2007277282A (ja) * | 2006-04-03 | 2007-10-25 | Nitto Denko Corp | 半導体ウエハ加工用粘着シート |
JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
JP4837490B2 (ja) * | 2006-08-22 | 2011-12-14 | 日東電工株式会社 | 加工用粘着シート |
US20100019365A1 (en) * | 2006-09-12 | 2010-01-28 | Nitto Denko Corporation | Dicing/die bonding film |
JP4620028B2 (ja) * | 2006-10-19 | 2011-01-26 | 日東電工株式会社 | 基板加工用粘着シート |
TW200842174A (en) * | 2006-12-27 | 2008-11-01 | Cheil Ind Inc | Composition for pressure sensitive adhesive film, pressure sensitive adhesive film, and dicing die bonding film including the same |
KR100907982B1 (ko) * | 2006-12-27 | 2009-07-16 | 제일모직주식회사 | 점착필름 형성용 조성물에 의한 반도체 패키지용 점착필름을 포함하는 다이싱 다이본드 필름 |
JP4717052B2 (ja) * | 2007-11-08 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717086B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4717085B2 (ja) * | 2008-01-18 | 2011-07-06 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP4553400B2 (ja) * | 2008-02-18 | 2010-09-29 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
-
2007
- 2007-12-05 JP JP2007314899A patent/JP4717051B2/ja active Active
-
2008
- 2008-10-30 CN CN2012103610185A patent/CN102911618A/zh active Pending
- 2008-10-30 CN CN2008801150899A patent/CN101855710B/zh active Active
- 2008-10-30 DE DE112008003005T patent/DE112008003005T5/de not_active Withdrawn
- 2008-10-30 KR KR1020107025179A patent/KR101420903B1/ko active IP Right Grant
- 2008-10-30 US US12/741,875 patent/US20100233409A1/en not_active Abandoned
- 2008-10-30 KR KR1020137027287A patent/KR101420993B1/ko active IP Right Grant
- 2008-10-30 KR KR1020107008461A patent/KR20100049693A/ko not_active Application Discontinuation
- 2008-11-06 TW TW097142877A patent/TWI428419B/zh active
- 2008-11-06 TW TW102141374A patent/TWI488939B/zh active
-
2010
- 2010-04-14 JP JP2010093455A patent/JP4718641B2/ja not_active Expired - Fee Related
- 2010-09-03 JP JP2010198049A patent/JP2011040763A/ja not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005005355A (ja) * | 2003-06-10 | 2005-01-06 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
Also Published As
Publication number | Publication date |
---|---|
CN102911618A (zh) | 2013-02-06 |
KR20130122025A (ko) | 2013-11-06 |
KR20100134739A (ko) | 2010-12-23 |
TWI488939B (zh) | 2015-06-21 |
TW201412930A (zh) | 2014-04-01 |
US20100233409A1 (en) | 2010-09-16 |
KR20100049693A (ko) | 2010-05-12 |
CN101855710A (zh) | 2010-10-06 |
JP2009135377A (ja) | 2009-06-18 |
KR101420993B1 (ko) | 2014-07-17 |
DE112008003005T5 (de) | 2010-09-16 |
TWI428419B (zh) | 2014-03-01 |
JP2010166091A (ja) | 2010-07-29 |
JP4718641B2 (ja) | 2011-07-06 |
JP2011040763A (ja) | 2011-02-24 |
TW200932865A (en) | 2009-08-01 |
JP4717051B2 (ja) | 2011-07-06 |
KR101420903B1 (ko) | 2014-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101855710B (zh) | 切割/芯片接合薄膜 | |
CN101911259B (zh) | 切割/芯片接合薄膜 | |
CN101855711B (zh) | 切割/芯片接合薄膜 | |
CN101911260B (zh) | 切割/芯片接合薄膜 | |
CN101645427B (zh) | 切割/芯片接合薄膜 | |
CN101515564B (zh) | 具备切割膜和芯片焊接膜的膜 | |
CN101645425A (zh) | 切割/芯片接合薄膜 | |
CN101645426A (zh) | 切割/芯片接合薄膜 | |
CN102169849B (zh) | 芯片保持用胶带、工件保持方法和半导体装置制造方法 | |
CN101640191A (zh) | 切割/芯片接合薄膜 | |
CN103081068B (zh) | 半导体装置用薄膜以及半导体装置 | |
CN101661909B (zh) | 热固化型芯片接合薄膜 | |
CN102408845A (zh) | 切割/芯片接合薄膜、切割/芯片接合薄膜的制造方法以及半导体装置的制造方法 | |
CN102222633B (zh) | 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置的制造方法 | |
CN101740353B (zh) | 切割模片接合膜和生产半导体器件的方法 | |
CN102029655B (zh) | 半导体装置用薄膜 | |
CN103081069B (zh) | 半导体装置用薄膜以及半导体装置 | |
CN101617390B (zh) | 切割/芯片接合薄膜 | |
CN103140917B (zh) | 切割/芯片接合薄膜以及半导体装置制造方法 | |
CN102222634B (zh) | 半导体背面用切割带集成膜 | |
CN102227482B (zh) | 半导体装置制造用薄膜卷 | |
CN102386054B (zh) | 半导体装置用薄膜以及半导体装置 | |
CN102190973A (zh) | 半导体装置制造用薄膜及半导体装置的制造方法 | |
CN101617395A (zh) | 热固化型芯片接合薄膜 | |
CN102265388A (zh) | 热固型芯片接合薄膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |