TWI428419B - Cut crystal sticky film - Google Patents

Cut crystal sticky film Download PDF

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Publication number
TWI428419B
TWI428419B TW097142877A TW97142877A TWI428419B TW I428419 B TWI428419 B TW I428419B TW 097142877 A TW097142877 A TW 097142877A TW 97142877 A TW97142877 A TW 97142877A TW I428419 B TWI428419 B TW I428419B
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TW
Taiwan
Prior art keywords
film
acrylate
adhesive layer
meth
adhesive
Prior art date
Application number
TW097142877A
Other languages
English (en)
Other versions
TW200932865A (en
Inventor
Katsuhiko Kamiya
Takeshi Matsumura
Shuuhei Murata
Original Assignee
Nitto Denko Corp
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Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW200932865A publication Critical patent/TW200932865A/zh
Application granted granted Critical
Publication of TWI428419B publication Critical patent/TWI428419B/zh

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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/08—Homopolymers or copolymers of acrylic acid esters
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    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
    • C08G18/40—High-molecular-weight compounds
    • C08G18/62—Polymers of compounds having carbon-to-carbon double bonds
    • C08G18/6216—Polymers of alpha-beta ethylenically unsaturated carboxylic acids or of derivatives thereof
    • C08G18/622—Polymers of esters of alpha-beta ethylenically unsaturated carboxylic acids
    • C08G18/6225—Polymers of esters of acrylic or methacrylic acid
    • C08G18/6229—Polymers of hydroxy groups containing esters of acrylic or methacrylic acid with aliphatic polyalcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G18/00—Polymeric products of isocyanates or isothiocyanates
    • C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
    • C08G18/70—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the isocyanates or isothiocyanates used
    • C08G18/81—Unsaturated isocyanates or isothiocyanates
    • C08G18/8108—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group
    • C08G18/8116—Unsaturated isocyanates or isothiocyanates having only one isocyanate or isothiocyanate group esters of acrylic or alkylacrylic acid having only one isocyanate or isothiocyanate group
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    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • C09J175/04—Polyurethanes
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    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Description

切晶黏晶膜
本發明係關於一種切晶黏晶膜，其係在將用以固著晶片狀工件(半導體晶片等)與電極構件之接著劑於切晶前附設於工件(半導體晶圓等)上之狀態下供於工件之切晶。
形成電路圖案之半導體晶圓(工件)視需要藉由背面研磨而調整厚度後，被切晶成半導體晶片(晶片狀工件)(切晶步驟)。於切晶步驟中，通常為了除去切割層而用適度之液壓(通常為2kg/cm2 左右)清洗半導體晶圓。其次，利用接著劑將上述半導體晶片固著(黏著步驟)於導線架等被黏附體上後，進行焊接步驟。於上述黏著步驟中，將接著劑塗佈於導線架或半導體晶片上。然而，該方法難以實現接著劑層之均勻化，又，接著劑之塗佈需要特殊裝置或較長時間。因此，提出有一種於切晶步驟中接著保持半導體晶圓，並且亦賦予黏著步驟中所必需之晶片固著用接著劑層的切晶黏晶膜(例如，參照專利文獻1)。
專利文獻1中所記載之切晶黏晶膜係於支持基材上將接著劑層設置成可剝離而形成者。即，於藉由接著劑層之保持下對半導體晶圓進行切晶後，延伸支持基材並將半導體晶片與接著劑層一起剝離，將該等分別回收後，介隔該接著劑層而使半導體晶片固著於導線架等被黏附體上。
為了不產生無法切晶或尺寸錯誤等，業界期望此種切晶黏晶膜之接著劑層具有對於半導體晶圓之良好保持力、及可將切晶後之半導體晶片與接著劑層自支持基材上成一體地剝離之良好剝離性。然而，平衡該兩種特性絕非易事。尤其，於如利用旋轉圓刀等對半導體晶圓進行切晶之方式等要求接著劑層具有較大保持力之情形時，難以獲得滿足上述特性之切晶黏晶膜。
因此，為了克服此種問題，提出有各種改良方法(例如，參照專利文獻2)。於專利文獻2中，提出有以下方法：使可進行紫外線硬化之黏著劑層介於支持基材與接著劑層之間，於切晶後對該黏著劑層進行紫外線硬化，使黏著劑層與接著劑層之間之接著力下降，從而藉由兩者間之剝離而易於拾取半導體晶片。
然而，根據該改良法，有時亦難以製成使切晶時之保持力與其後之剝離性取得良好平衡的切晶黏晶膜。例如，於獲取10mm×10mm以上之大型半導體晶片之情形時，由於其面積較大，故利用通常之黏晶機無法容易地拾取半導體晶片。
專利文獻1：日本專利特閉昭60-57642號公報
專利文獻2：日本專利特開平2-248064號公報
本發明係鑒於上述問題點而成者，其目的在於提供一種於基材上具有包含黏著劑層之切晶膜與設置於該黏著劑層上之黏晶膜的切晶黏晶膜，該切晶黏晶膜即便於半導體晶圓為薄型時，對該薄型工件進行切晶時之保持力、與將藉由切晶所獲得之半導體晶片及該黏晶膜成一體地剝離時之剝離性的平衡特性亦優異。
本案發明者等人為解決上述先前之問題點，對切晶黏晶膜進行了研究。結果發現，藉由切晶膜中所含有之多官能性單體成分向黏晶膜中物質擴散，切晶膜與黏晶膜之邊界面消失，藉此拾取性下降，從而完成本發明。
即，為了解決上述課題，本發明之切晶黏晶膜之特徵在於：於基材上具有包含黏著劑層之切晶膜與設置於該黏著劑層上之黏晶膜，上述黏著劑層含有聚合物，該聚合物係含有作為主要單體之丙烯酸酯、相對於丙烯酸酯而含量為10~30mol%之範圍內之含羥基之單體、相對於含羥基之單體而含量為70~90mol%之範圍內之具有自由基反應性碳-碳雙鍵的異氰酸酯化合物而構成，並且上述黏晶膜係含有環氧樹脂而構成。
於本發明之切晶膜中，由於使用丙烯酸酯作為主要單體，故可謀求剝離力之降低，其結果為可實現良好之拾取性。又，藉由使含羥基之單體之含量為10mol%以上，可抑制紫外線照射後之交聯不充分。其結果，例如可防止切晶時在貼附於黏著劑層上之切晶環上產生黏著劑殘留。另一方面，藉由使上述含量為30mol%以下，可防止藉由紫外線照射之交聯過度進行而導致難以剝離，從而使拾取性下降。
又，於本發明中，由於採用具有自由基反應性碳-碳雙鍵之異氰酸酯化合物代替多官能性單體，因此並無該多官能性單體向黏晶膜中物質擴散之情形。其結果，可防止切晶膜與黏晶膜之邊界面消失，從而可實現更良好之拾取性。
於上述構成中，上述丙烯酸酯較好的是CH2 =CHCOOR(式中，R為碳數6~10之烷基)。於使用CH2 =CHCOOR作為丙烯酸酯之情形時，使用式中之烷基R之碳數為6~10之範圍內者，藉此可防止剝離力變得過大而使拾取性下降。
上述含羥基之單體較好的是選自由(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥月桂酯及(甲基)丙烯酸(4-羥甲基環己基)甲酯所組成之群中之至少任一種。
進而，上述具有自由基反應性碳-碳雙鍵之異氰酸酯化合物較好的是2-甲基丙烯醯氧基乙基異氰酸酯或2-丙烯醯氧基乙基異氰酸酯中之至少任一種。
又，上述聚合物之重量平均分子量較好的是35萬~100萬之範圍內。藉由使重量平均分子量為35萬以上，可防止其成為低分子量聚合物，藉此，例如可防止切晶時自貼附於黏著劑層上之切晶環上產生剝離。進而，由於可防止紫外線照射後之交聯不充分，故自黏著劑層上剝離切晶環時，亦可防止產生黏著劑殘留。另一方面，藉由使重量平均分子量為100萬以下，可提昇將黏著劑層形成於基材上時之作業性。其原因在於，黏著劑層之形成例如係將含有上述聚合物之黏著劑組合物之溶液塗佈於基材上後使其乾燥後而進行，但若聚合物之重量平均分子量超過100萬，則由於黏著劑組合物之溶液的黏度變得過大，而造成該聚合物之聚合及塗佈時之作業性下降。
進而，較好的是於紫外線照射前，上述黏著劑層於23℃下之拉伸彈性率為0.4~3.5MPa之範圍內，於紫外線照射後，其於23℃下之拉伸彈性率為7~100MPa之範圍內。藉由使紫外線照射前之拉伸彈性率(23℃)為0.4MPa以上，可使對半導體晶圓進行切晶時之半導體晶片之固定變得良好，其結果，可防止產生碎屑(chipping)。又，剝離切晶環時，亦可防止產生黏著劑殘留。另一方面，藉由使拉伸彈性率(23℃)為3.5MPa以下，可防止切晶時發生晶片飛濺。又，藉由使紫外線照射後之拉伸彈性率(23℃)為7MPa以上，可謀求拾取性之提昇。
上述黏著劑層較好的是不含丙烯酸。藉此，可防止黏著劑層與黏晶膜之反應或相互作用，從而可謀求拾取性之進一步提昇。
 (切晶黏晶膜)
一邊參照圖1及圖2一邊對本發明之實施形態加以說明。圖1係表示本實施形態之切晶黏晶膜之剖面模式圖。圖2係表示本實施形態之其他切晶黏晶膜之剖面模式圖。其中，省略說明中所不需要之部分，又，為了便於說明，有藉由擴大或縮小等來進行圖示之部分。
如圖1所示，切晶黏晶膜10係於基材1上具有設置有黏著劑層2之切晶膜與設置於該黏著劑層2上之黏晶膜3的構成。又，本發明亦可如圖2所示，為僅於半導體晶圓貼附部分形成黏晶膜3'之構成。
上述基材1係具有紫外線透過性且成為切晶黏晶膜10、11之強度母體者。例如可列舉：低密度聚乙烯、直鏈狀聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴，乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺基甲酸酯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯等聚酯，聚碳酸酯，聚醯亞胺，聚醚醚酮，聚醚醯亞胺，聚醯胺，全芳香族聚醯胺，聚苯硫醚，芳族聚醯胺(紙)，玻璃，玻璃布，氟樹脂，聚氯乙烯，聚偏二氯乙烯，纖維素系樹脂，聚矽氧樹脂，金屬(箔)，紙等。
又，作為基材1之材料，可列舉上述樹脂之交聯體等聚合物。上述塑膠膜可未經延伸而使用，亦可使用視需要經實施單軸或雙軸之延伸處理者。若使用藉由延伸處理等賦予熱收縮性之樹脂片材，則切晶後使該基材1熱收縮，而使黏著劑層2與黏晶膜3、3'之接著面積下降，從而可謀求半導體晶片之回收之容易化。
基材1之表面可為了提高與鄰接層之密著性、保持性等，而實施慣用之表面處理，例如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、離子化輻射處理等化學或物理處理，利用底塗劑(例如下述之黏著物質)之塗佈處理。
上述基材1可適當地選擇使用同種或異種者，視需要可使用摻合有數種者。又，為了對基材1賦予抗靜電能力，可於上述之基材1上設置由金屬、合金、該等之氧化物等所形成之厚度為30~500左右之導電性物質的蒸鍍層。基材1可為單層或者雙層以上之複數層。
基材1之厚度並無特別限制，可適當決定，通常為5~200μm左右。
上述黏著劑層2係含有紫外線硬化型黏著劑而構成。紫外線硬化型黏著劑可藉由紫外線之照射而使交聯度增大，從而容易使其黏著力下降，亦可藉由僅對與圖2所示之黏著劑層2之半導體晶圓貼附部分相對應之部分2a進行紫外線照射，而使其與其他部分2b之黏著力產生差值。
又，根據圖2所示之黏晶膜3'來使紫外線硬化型黏著劑層2硬化，藉此可容易形成黏著力顯著下降之上述部分2a。由於在硬化且黏著力下降之上述部分2a上貼附黏晶膜3'，故黏著劑層2之上述部分2a與黏晶膜3'之界面具有拾取時容易剝離之性質。另一方面，未照射紫外線之部分具有充分之黏著力，形成上述部分2b。
如上所述，於圖1所示之切晶黏晶膜10之黏著劑層2上，由未硬化之紫外線硬化型黏著劑所形成之上述部分2b與黏晶膜3黏著，可確保切晶時之保持力。如此，紫外線硬化型黏著劑可於接著、剝離之平衡良好之情況下支持用以將半導體晶片固著於基板等被黏附體上之黏晶膜3。於圖2所示之切晶黏晶膜11之黏著劑層2上，上述部分2b可固定切晶環。切晶環例如可使用由不鏽鋼等金屬所構成者或樹脂製者。
上述紫外線硬化型黏著劑係使用具有自由基反應性碳-碳雙鍵等紫外線硬化性之官能基、且顯示黏著性者。作為紫外線硬化型黏著劑，例如可例示於丙烯酸系黏著劑中調配紫外線硬化性之單體成分或寡聚物成分所形成之添加型紫外線硬化型黏著劑。丙烯酸系黏著劑係將丙烯酸系聚合物作為基底聚合物之黏著劑，就半導體晶圓或玻璃等忌污染之電子零件之藉由超純水或醇等有機溶劑之清潔清洗性等方面而言，較好。
於本發明中，作為上述丙烯酸系聚合物，可列舉將丙烯酸酯用作主要單體成分者。作為上述丙烯酸酯，例如可列舉：丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基之碳數為1~30、尤其是碳數為4~18之直鏈狀或支鏈狀之烷基酯等)以及丙烯酸環烷基酯(例如環戊酯、環己酯等)等。該等單體可單獨使用，亦可併用兩種以上。
上述所例示之丙烯酸酯之中，於本發明中較好的是使用以化學式CH2 =CHCOOR(式中，R為碳數6~10、更好的是碳數8~9之烷基)所表示之單體。若碳數未滿6，則有剝離力變得過大而導致拾取性下降之情形。另一方面，若碳數超過10，則有與黏晶膜之接著性下降，結果切晶時會發生晶片飛濺之情形。又，於丙烯酸酯以化學式CH2 =CHCOOR表示之情形時，其含量相對於總單體成分，較好的是50~91mol%，更好的是80~87mol%。若含量未滿50mol%，則有剝離力變得過大而導致拾取性下降之情形。另一方面，若超過91mol%，則有黏著性下降而於切晶時會發生晶片飛濺之情形。進而，以上述化學式所表示之單體中，特別好的是丙烯酸2-乙基己酯、丙烯酸異辛酯。
上述丙烯酸系聚合物含有可與上述丙烯酸酯共聚合之含羥基之單體作為必要成分。作為含羥基之單體，例如可列舉：(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等。
上述含羥基之單體之含量相對於丙烯酸酯，較好的是10~30mol%之範圍內，更好的是15~25mol%之範圍內。若含量未滿10mol%，則紫外線照射後之交聯不充分，切晶時在貼附於黏著劑層上之切晶環上會產生黏著劑殘留。另一方面，若含量超過30mol%，則黏著劑之極性變高，其與黏晶膜之相互作用變高，由此導致剝離變得困難。
上述丙烯酸系聚合物以凝集力、耐熱性等之改性為目的，視需要亦可含有與可與上述丙烯酸烷基酯或環烷基酯共聚合之其他單體成分相對應的單元。作為此種單體成分，例如可列舉：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸、丁烯酸等含羧基之單體，順丁烯二酸酐、衣康酸酐等酸酐單體，苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧基萘磺酸等含磺酸基之單體，2-羥乙基丙烯醯基磷酸酯等含磷酸基之單體，丙烯醯胺，丙烯腈等。該等可共聚合之單體成分可使用一種或兩種以上。該等可共聚合之單體之使用量較好的是總單體成分之40重量%以下。其中，於上述含羧基之單體之情形時，藉由其羧基與黏晶膜3中之環氧樹脂中之環氧基反應，黏著劑層2與黏晶膜3之邊界面會消失，從而導致兩者之剝離性下降。因此，含羧基之單體之使用量較好的是總單體成分之0~3重量%以下。另外，由於含羥基之單體或含縮水甘油基之單體亦可與環氧樹脂中之環氧基反應，故較好的是使該等之使用量與含羧基之單體之情形相同。又，本發明之黏著劑層2較好的是不含有該等單體成分中之丙烯酸。其原因在於：丙烯酸會向黏晶膜3中物質擴散而使黏著劑層2與黏晶膜3之邊界面消失，從而導致剝離性下降。
此處，上述丙烯酸系聚合物不含多官能性單體作為共聚合用單體成分。由此，並無多官能性單體向黏晶膜中物質擴散之情形，從而可防止因黏著劑層2與黏晶膜3之邊界面消失所引起的拾取性之下降。
又，上述丙烯酸系聚合物含有具有自由基反應性碳-碳雙鍵之異氰酸酯化合物作為必要成分。作為上述異氰酸酯化合物，例如可列舉：甲基丙烯醯基異氰酸酯、2-甲基丙烯醯氧基乙基異氰酸酯、2-丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯等。
上述具有自由基反應性碳-碳雙鍵之異氰酸酯化合物之含量相對於含羥基之單體，較好的是70~90mol%之範圍內，更好的是75~85mol%之範圍內。若含量未滿70mol%，則紫外線照射後之交聯不充分，切晶時在貼附於黏著劑層上之切晶環上會產生黏著劑殘留。另一方面，若含量超過90mol%，則黏著劑之極性變高，其與黏晶膜之相互作用變高，由此使剝離變得困難而導致拾取性下降。
上述丙烯酸系聚合物可藉由將單一單體或兩種以上之單體混合物進行聚合而獲得。聚合可利用溶液聚合、乳化聚合、塊狀聚合、懸濁聚合等中任一種方式來進行。就防止對清潔之被黏附體造成污染等方面而言，較好的是低分子量物質之含量小。就該方面而言，丙烯酸系聚合物之重量平均分子量較好的是35萬~100萬，更好的是45萬~80萬左右。
又，為了調整紫外線照射前之黏著力或紫外線照射後之黏著力，亦可於上述黏著劑中適當採用外部交聯劑。作為外部交聯方法之具體方法，可列舉添加聚異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺系交聯劑等所謂交聯劑來使其反應之方法。於使用外部交聯劑之情形時，其使用量係根據與應交聯之基底聚合物之平衡，進而根據用作黏著劑之用途而適當決定。通常，相對於上述基底聚合物100重量份，較好的是調配20重量份左右以下，更好的是調配0.1~10重量份。進而，除上述成分以外，黏著劑中亦可視需要而使用先前公知之各種增黏劑、抗老化劑等添加劑。
作為所調配之上述紫外線硬化性之單體成分，例如可列舉：胺基甲酸酯寡聚物、(甲基)丙烯酸胺基甲酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。又，紫外線硬化性之寡聚物成分可列舉：胺基甲酸酯系、聚醚系、聚酯系、聚碳酸酯系、聚丁二烯系等各種寡聚物，較適當的是分子量為100~30000左右之範圍者。紫外線硬化性之單體成分或寡聚物成分之調配量可根據上述黏著劑層之種類，而適當地決定可使黏著劑層之黏著力下降之量。通常，相對於構成黏著劑之丙烯酸系聚合物等基底聚合物100重量份，例如為5~500重量份，較好的是40~150重量份左右。
又，作為紫外線硬化型黏著劑，除上述所說明之添加型紫外線硬化型黏著劑以外，可列舉使用在聚合物支鏈或主鏈中或者主鏈末端具有自由基反應性碳-碳雙鍵者作為基底聚合物之內在型紫外線硬化型黏著劑。內在型紫外線硬化型黏著劑無須含有低分子量成分即寡聚物成分等，或未大量含有，因此並無寡聚物成分等經時性地在黏著劑中移動之情形，可形成層結構穩定之黏著劑層，故較好。
上述具有自由基反應性碳-碳雙鍵之基底聚合物可並無特別限制地使用具有自由基反應性碳-碳雙鍵、且具有黏著性者。作為此種基底聚合物，較好的是將丙烯酸系聚合物作為基本骨架者。作為丙烯酸系聚合物之基本骨架，可列舉上述所例示之丙烯酸系聚合物。
向上述丙烯酸系聚合物中導入自由基反應性碳-碳雙鍵之方法並無特別限制，可採用各種方法，但就分子設計之方面而言，較容易的是將自由基反應性碳-碳雙鍵導入至聚合物支鏈中之方法。例如可列舉如下方法：預先使具有羥基之單體與丙烯酸系聚合物共聚合後，使具有可與該羥基反應之異氰酸酯基及自由基反應性碳-碳雙鍵之異氰酸酯化合物，於維持自由基反應性碳-碳雙鍵之紫外線硬化性之情形下進行縮合或加成反應。作為具有異氰酸酯基及自由基反應性碳-碳雙鍵之異氰酸酯化合物，可列舉上述所例示者。又，作為丙烯酸系聚合物，可使用將上述所例示之含羥基之單體或2-羥乙基乙烯醚、4-羥丁基乙烯醚、二乙二醇單乙烯醚之醚系化合物等進行共聚合所形成者。
上述內在型紫外線硬化型黏著劑可單獨使用上述具有自由基反應性碳-碳雙鍵之基底聚合物(尤其是丙烯酸系聚合物)，於不使特性惡化之程度下亦可調配上述紫外線硬化性之單體成分或寡聚物成分。通常相對於基底聚合物100重量份，紫外線硬化性之寡聚物成分等為30重量份之範圍內，較好的是0~10重量份之範圍。
於藉由紫外線等進行硬化之情形時，使上述紫外線硬化型黏著劑中含有光聚合起始劑。作為光聚合起始劑，例如可列舉：4-(2-羥乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等α-酮醇系化合物，甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)-苯基]-2-嗎啉基丙烷-1等苯乙酮系化合物，苯偶姻乙醚、苯偶姻異丙醚、茴香偶姻甲醚等苯偶姻醚系化合物，苄基二甲基縮酮等縮酮系化合物，2-萘磺醯氯等芳香族磺醯氯系化合物，1-苯酮-1,1-丙二酮-2-(鄰乙氧基羰基)肟等光學活性肟系化合物，二苯甲酮、苯甲醯基苯甲酸、3,3'-二甲基-4-甲氧基二苯甲酮等二苯甲酮系化合物，噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物，樟腦醌，鹵化酮，醯基膦氧化物，醯基膦酸鹽等。光聚合起始劑之調配量相對於構成黏著劑之丙烯酸系聚合物等基底聚合物100重量份，例如為0.05~20重量份左右。
又，作為紫外線硬化型黏著劑，例如可列舉日本專利特開昭60-196956號公報中所揭示之含有具有兩個以上不飽和鍵之加成聚合性化合物、具有環氧基之烷氧基矽烷等光聚合性化合物與羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽系化合物等光聚合起始劑的橡膠系黏著劑或丙烯酸系黏著劑等。
紫外線硬化型之黏著劑層2之形成可藉由在基材1上形成紫外線硬化型之黏著劑層2來進行，或者亦可藉由將設置於分隔件上之黏著劑層2轉印至基材1上來進行。
於切晶黏晶膜10之黏著劑層2上，亦可以使上述部分2a之黏著力小於其他部分2b之黏著力之方式對黏著劑層2之一部分進行紫外線照射。即，使用基材1之至少單面的與半導體晶圓貼附部分3a相對應之部分以外的部分之全部或一部分被遮光者，於其上形成紫外線硬化型之黏著劑層2後進行紫外線照射，使與半導體晶圓貼附部分3a相對應之部分硬化，從而可形成黏著力下降之上述部分2a。作為遮光材料，可於支持膜上藉由印刷或蒸鍍等來製作可成為光罩者。又，紫外線照射累計光量較好的是50~500mJ/cm2 。藉由使累計光量為上述範圍內，不僅於切晶時保持可防止發生半導體晶片之晶片飛濺之程度的黏著性，並且於拾取時可獲得良好之拾取性。藉此，可高效率地製造本發明之切晶黏晶膜10。
再者，於紫外線照射時因氧氣而產生硬化阻礙之情形時，較理想的是自紫外線硬化型之黏著劑層2之表面阻斷氧氣(空氣)。作為阻斷方法，例如可列舉用分隔件包覆黏著劑層2之表面之方法、或於氮氣環境中進行紫外線等之紫外線照射之方法等。
黏著劑層2之厚度並無特別限定，就防止晶片切割面之缺損及保持接著層之固定的兼顧性等方面而言，較好的是1~50μm左右。較好的是2~30μm，更好的是5~25μm。
黏晶膜3例如可為僅包含接著劑層之單層之構成。又，亦可將玻璃轉移溫度不同之熱塑性樹脂、熱硬化溫度不同之熱硬化性樹脂加以適當組合而形成兩層以上之多層結構。再者，由於在半導體晶圓之切晶步驟中使用切削水，故有黏晶膜3吸濕而達到常態以上之含水率的情形。若使黏晶膜以此種高含水率而接著於基板等上，則有於後硬化之階段中，水蒸氣積存於接著界面上而發生隆起之情形。因此，作為晶片接著用接著劑，藉由形成以晶片接著劑夾持透濕性高之芯材料之構成，於後硬化之階段中，水蒸氣通過膜而擴散，從而可回避上述問題。就上述觀點而言，黏晶膜3亦可形成為於芯材料之單面或兩面形成接著劑層之多層結構。
作為上述芯材料，可列舉：經膜(例如聚醯亞胺膜、聚酯膜、聚對苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜、聚碳酸酯膜等)、玻璃纖維或塑膠製不織纖維進行強化之樹脂基板，矽基板或玻璃基板等。
本發明之黏晶膜3係含有環氧樹脂作為主要成分而構成。環氧樹脂就腐食半導體元件之離子性雜質等之含量少的方面而言較好。作為上述環氧樹脂，若為通常用作接著劑組合物者，則並無特別限制，例如可使用：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三羥基苯基甲烷型、四酚基乙烷型等二官能環氧樹脂或多官能環氧樹脂，或者乙內醯脲型、三縮水甘油基異氰尿酸酯型或縮水甘油胺型等環氧樹脂。該等可單獨使用或併用兩種以上。該等環氧樹脂之中，特別好的是酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三羥基苯基甲烷型樹脂或四酚基乙烷型環氧樹脂。其原因在於該等環氧樹脂富有與作為硬化劑之酚系樹脂的反應性，且耐熱性等優異。
又，黏晶膜3可視需要而適當地併用其他熱硬化性樹脂或熱塑性樹脂。作為上述熱硬化性樹脂，可列舉：酚系樹脂、胺系樹脂、不飽和聚酯樹、聚胺基甲酸酯樹脂、聚矽氧樹脂或熱硬化性聚醯亞胺樹脂等。該等樹脂可單獨使用或併用兩種以上。又，作為環氧樹脂之硬化劑，較好的是酚系樹脂。
進而，上述酚系樹脂係作為上述環氧樹脂之硬化劑而發揮作用者，例如可列舉：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚系樹脂，可溶酚醛型酚系樹脂，聚對氧苯乙烯等聚氧苯乙烯等。該等可單獨使用或併用兩種以上。該等酚系樹脂之中，特別好的是苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。其原因在於可提昇半導體裝置之連接可靠性。
上述環氧樹脂與酚系樹脂之調配比例，例如較好的是調配成相對於上述環氧樹脂成分中之環氧基每1當量，酚系樹脂中之羥基為0.5~2.0當量。更好的是0.8~1.2當量。即，其原因在於，若兩者之調配比例脫離上述範圍，則無法進行充分之硬化反應，從而導致環氧樹脂硬化物之特性易於劣化。
作為上述熱塑性樹脂，可列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁二烯橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、6-尼龍或6,6-尼龍等聚醯胺樹脂、苯氧基樹脂、丙烯酸系樹脂、PET(polyethylene terephthalate，聚對苯二甲酸乙二酯)或PBT(polybutylene terephthalate，聚對苯二甲酸丁二酯)等飽和聚酯樹脂、聚醯胺醯亞胺樹脂或氟樹脂等。該等熱塑性樹脂可單獨使用或併用兩種以上。該等熱塑性樹脂之中，特別好的是離子性雜質少且耐熱性高，可確保半導體元件之可靠性之丙烯酸系樹脂。
作為上述丙烯酸系樹脂，並無特別限定，可列舉以具有碳數為30以下、尤其是碳數為4~18之直鏈或者支鏈烷基的丙烯酸或甲基丙烯酸之酯的一種或兩種以上作為成分之聚合物等。作為上述烷基，例如可列舉：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
又，作為形成上述聚合物之其他單體，並無特別限定，例如可列舉：如丙烯酸、甲基丙烯酸、丙烯酸羧基乙酯、丙烯酸羧基戊酯、衣康酸、順丁烯二酸、反丁烯二酸或丁烯酸等之含羧基之單體，如順丁烯二酸酐或衣康酸酐等之酸酐單體，如(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥月桂酯或丙烯酸(4-羥甲基環己基)甲酯等之含羥基之單體，如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等之含磺酸基之單體，或者如2-羥乙基丙烯醯基磷酸酯等之含磷酸基之單體。
對於黏晶膜3之接著劑層，為了使其預先進行某種程度之交聯，較好的是於製作時，預先添加與聚合物之分子鏈末端之官能基等反應之多官能性化合物作為交聯劑。藉此，可提昇高溫下之接著特性，獲得耐熱性之改善。
再者，於黏晶膜3之接著劑層中視需要可適當地調配其他添加劑。作為其他添加劑，例如可列舉：阻燃劑、矽烷偶合劑或離子捕捉劑等。作為上述阻燃劑，例如可列舉：三氧化銻、五氧化銻、溴化環氧樹脂等。該等可單獨使用或併用兩種以上。作為上述矽烷偶合劑，例如可列舉：β-(3,4-環氧基環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷等。該等化合物可單獨使用或併用兩種以上。作為上述離子捕捉劑，例如可列舉水滑石類、氫氧化鉍等。該等可單獨使用或併用兩種以上。
黏晶膜3之厚度並無特別限定，例如為5~100μm左右，較好的是5~50μm左右。
切晶黏晶膜10、11可具有抗靜電能力。藉此，可防止由於其接著時及剝離時等產生靜電或由其引起之工件(半導體晶圓等)帶電而破壞電路等。抗靜電能力之賦予可藉由向基材1、黏著劑層2或黏晶膜3中添加抗靜電劑或導電性物質之方法、於基材1上附設包含電荷轉移複合物或金屬膜等之導電層等適當之方式來進行。作為該等方式，較好的是難以產生有可能使半導體晶圓變質之雜質離子的方式。作為以賦予導電性、提昇熱導性等為目的而調配之導電性物質(導電填料)，可列舉：銀、鋁、金、銅、鎳、導電性合金等之球狀、針狀、薄片狀金屬粉，氧化鋁等金屬氧化物，非晶碳黑，石墨等。其中，上述黏晶膜3、3'為非導電性，就可不產生漏電之方面而言較好。
上述切晶黏晶膜10、11之黏晶膜3、3'較好的是由分隔件保護(未圖示)。分隔件具有作為保護黏晶膜3、3'直至供於實用為止之保護材的功能。又，分隔件進而可用作將黏晶膜3、3'轉印至黏著劑層2時之支持基材。分隔件係於將工件貼附於切晶黏晶膜之黏晶膜3、3'上時被剝離。作為分隔件，亦可使用：聚對苯二甲酸乙二酯(PET)，聚乙烯，聚丙烯，或經氟系剝離劑、長鏈烷基丙烯酸酯系剝離劑等剝離劑進行表面塗佈之塑膠膜或紙等。
(切晶黏晶膜之製造方法)
其次，以切晶黏晶膜10為例，對本發明之切晶黏晶膜之製造方法加以說明。首先，基材1可利用先前公知之製膜方法進行製膜。作為該製膜方法，例如可例示：壓延製膜法，於有機溶劑中之澆鑄法，於密閉系統中之膨脹擠出法、T字模式擠出法、共擠出法、乾式層法等。
其次，將含有黏著劑之組合物塗佈於基材1上，使其乾燥(視需要可進行加熱交聯)而形成黏著劑層2。作為塗佈方式，可列舉輥式塗佈、絲網塗佈、凹板塗佈等。又，塗佈可直接於基材1上進行，亦可塗佈於對表面進行了剝離處理之剝離紙等上後，轉印至基材1上。
其次，將用以形成黏晶膜3之形成材料於剝離紙上塗佈成特定之厚度，進而於特定條件下進行乾燥而形成塗佈層。將該塗佈層轉印至上述黏著劑層2上，藉此形成黏晶膜3。又，亦可將形成材料直接塗佈於上述黏著劑層2上後，於特定條件下進行乾燥而形成黏晶膜3。藉此，可獲得本發明之切晶黏晶膜10。
(半導體裝置之製造方法)
本發明之切晶黏晶膜10、11係在將任意地設置於黏晶膜3、3'上之分隔件適當地剝離後按以下方式使用。以下，一邊參照圖3，一邊以使用切晶黏晶膜11之情形為例進行說明。
首先，將半導體晶圓4壓接於切晶黏晶膜11中之黏晶膜3'上，將其接著保持後固定(黏著步驟)。本步驟係一邊藉由壓接輥等按壓裝置進行按壓一邊進行。
其次，進行半導體晶圓4之切晶。藉此，將半導體晶圓4切割成特定之尺寸而單片化，製造半導體晶片5。切晶例如可根據常法自半導體晶圓4之電路面側進行。又，於本步驟中，例如採用切入至切晶黏晶膜10為止之被稱為全切割(full cut)之切割方式等。作為本步驟中所使用之切晶裝置並無特別限定，可使用先前公知者。又，半導體晶圓係藉由切晶黏晶膜10而接著固定，因此可抑制晶片缺損或晶片飛濺，並且亦可抑制半導體晶圓4之破損。
為了剝離經接著固定於切晶黏晶膜10上之半導體晶片，而進行半導體晶片5之拾取。作為拾取之方法並無特別限定，可採用先前公知之各種方法。例如可列舉用針將每個半導體晶片5自切晶黏晶膜10側向上頂，使用拾取裝置來拾取被上頂之半導體晶片5之方法等。
此處，由於黏著劑層2為紫外線硬化型，故拾取係於對該黏著劑層2照射紫外線後進行。藉此，黏著劑層2對於黏晶膜3a之黏著力下降，半導體晶片5之剝離變得容易。其結果，可不損傷半導體晶片而進行拾取。紫外線照射時之照射強度、照射時間等條件並無特別限定，只要視需要而適當設定即可。例如，紫外線照射累計光量較好的是50~500mJ/cm2 。若為上述累計光量之範圍內，則本發明之黏晶膜不會過度進行藉由紫外線照射之交聯而導致剝離變得困難，且顯示良好之拾取性。又，作為紫外線照射中所使用之光源，可使用上述者。
所拾取之半導體晶片5係介隔黏晶膜3a而接著固定於被黏附體6上(黏晶)。被黏附體6被載置於加熱組9上。作為被黏附體6，可列舉導線架、TAB(Tape Automated Bonding，捲帶式自動接合)膜、基板或另行製作之半導體晶片等。被黏附體6例如可為容易變形之變形型被黏附體，亦可為難以變形之非變形型被黏附體(半導體晶圓等)。
作為上述基板，可使用先前公知者。又，作為上述導線架，可使用Cu導線架、42合金導線架等金屬導線架或由環氧玻璃、BT(bismaleimide triazine，雙順丁烯二醯亞胺-三嗪)、聚醯亞胺等所形成之有機基板。然而，本發明並不限定於此，亦包含可黏著半導體元件，並與半導體元件電性連接後使用之電路基板。
於黏晶膜3為熱硬化型之情形時，藉由加熱硬化，將半導體晶片5接著固定於被黏附體6上，從而提昇耐熱強度。再者，半導體晶片5介隔半導體晶圓貼附部分3a而接著固定於基板等上者可供於回流焊(reflow)步驟。其後，進行使用接線(bonding wire)7將基板之端子部(內引腳)之前端與半導體晶片5上之電極墊(未圖示)電性連接的打線接合，進而用密封樹脂8密封半導體晶片，對該密封樹脂8進行後硬化。藉此，製成本實施形態之半導體裝置。
實施例
以下，舉例詳細說明本發明之較佳之實施例。其中，該實施例中所記載之材料或調配量等只要無特別限定之記載，則並非將本發明之範圍僅限定於該等，僅為說明例而已。又，各例中只要無特別記載，份均為重量基準。
(實施例1)
<切晶膜之製作>
於具備冷卻管、氮氣導入管、溫度計及攪拌裝置之反應容器內加入88.8份之丙烯酸2-乙基己酯(以下稱為「2EHA」)、11.2份之丙烯酸-2-羥乙酯(以下稱為「HEA」)、0.2份之過氧化苯甲醯及65份之甲苯，於氮氣流中且於61℃下進行6小時聚合處理，獲得重量平均分子量為85萬之丙烯酸系聚合物A。重量平均分子量如下。2EHA與HEA之莫耳比為100mol比20mol。
於該丙烯酸系聚合物A中加入12份(相對於HEA而為80mol%)之2-甲基丙烯醯氧基乙基異氰酸酯(以下稱為「MOI」)，於空氣流中且於50℃下進行48小時加成反應處理，獲得丙烯酸系聚合物A'。
繼而，相對於100份之丙烯酸系聚合物A'，加入8份之聚異氰酸酯化合物(商品名「Coronate L」，Nippon Polyurethane(股)製造)及5份之光聚合起始劑(商品名「Irgacure 651」，汽巴精化公司製造)，製成黏著劑溶液。
將上述中所製備之黏著劑溶液塗佈於PET剝離襯墊之經實施聚矽氧處理之面上，於120℃下加熱交聯2分鐘，形成厚度為10μm之黏著劑層。繼而，將厚度為100μm之聚烯烴膜貼合於該黏著劑層面上。其後，於50℃下保存24小時後，製成本實施例之切晶膜。
<黏晶膜之製作>
相對於100份之以丙烯酸乙酯-甲基丙烯酸甲酯為主要成分之丙烯酸酯系聚合物(根上工業(股)製造，商品名：Paracron W-197CM)，將59份之環氧樹脂1(JER(股)製造，Epikote 1004)、53份環氧樹脂2(JER(股)製造，Epikote 827)、121份之酚系樹脂(三井化學(股)製造，商品名：Milex XLC-4L)、222份之球狀二氧化矽(Admatechs(股)製造，商品名：SO-25R)溶解於甲基乙基酮中，以使濃度達到23.6重量%之方式進行製備。
將該接著劑組合物之溶液塗佈於作為剝離襯墊(分隔件)之經聚矽氧脫模處理之厚度為38μm之由聚對苯二甲酸乙二酯膜所形成的脫模處理膜上後，於130℃下乾燥2分鐘。藉此，製成厚度為25μm之黏晶膜。進而，將黏晶膜轉印至上述切晶膜中之黏著劑層側，從而獲得本實施例之切晶黏晶膜。
<重量平均分子量Mw之測定>
重量平均分子量Mw之測定係藉由GPC(Gel Permeation Chromatography，凝膠滲透層析)進行。測定條件如下。再者，重量平均分子量係藉由聚苯乙烯換算而計算出。
測定裝置：HLC-8120GPC(產品名，東曹公司製造)
管柱：Tskgel GMH-H(S)×2(型號，東曹公司製造)
流量：0.5ml/min
注入量：100μl
管柱溫度：40℃
溶析液：THF(tetrahydrofuran，四氫呋喃)
注入試料濃度：0.1重量%
檢測器：示差折射計
(實施例2~15)
關於各實施例2~15，除變更為下述表1中所示之組成及含量以外，以與上述實施例1相同之方式製作切晶黏晶膜。
再者，表1及下述表2中所記載之簡稱之含義如下。
2EHA：丙烯酸2-乙基己酯
i-OA：丙烯酸異辛酯
i-NA：丙烯酸異壬酯
BA：丙烯酸正丁酯
LA：丙烯酸月桂酯
AA：丙烯酸
HEA：丙烯酸2-羥乙酯
4HBA：丙烯酸4-羥丁酯
AOI：2-丙烯醯氧基乙基異氰酸酯
C/L：聚異氰酸酯化合物(商品名「Coronate L」，Nippon Polyurethane(股)製造)
T/C：環氧系交聯劑(商品名「Tetrad C」，Mitsubishi Gas化學公司製造)
(比較例1~9)
關於各比較例1~9，除變更為下述表2中所示之組成及含量以外，以與上述實施例1相同之方式製作切晶黏晶膜。
(切晶)
使用各實施例及比較例之各切晶黏晶膜，按以下之要領，實際進行半導體晶圓之切晶，評價各切晶黏晶膜之性能。
對半導體晶圓(直徑為8英吋，厚度為0.6mm)進行背面研磨處理，使用厚度為0.15mm之鏡面晶圓作為工件。自切晶黏晶膜上剝離分隔件後，於40℃下將鏡面晶圓輥壓接而貼合於該黏晶膜上，進而進行切晶。又，切晶係以達到1mm見方之晶片尺寸之方式進行全切割。對切割後之半導體晶圓及切晶黏晶膜確認有無晶片飛濺。關於晶片飛濺，係將即便只有一片半導體晶片飛濺之情形記為×，將無飛濺之情形記為○。關於晶圓研磨條件、貼合條件及切晶條件見下述。
<晶圓研磨條件>
研磨裝置：Disco公司製造之DFG-8560
半導體晶圓：直徑為8英吋(自厚度為0.6mm進行背面研磨至0.15mm)
<貼合條件>
貼附裝置：日東精機製造，MA-3000Ⅱ
貼附速度：10mm/min
貼附壓力：0.15MPa
貼附時之平台溫度：40℃
<切晶條件>
切晶裝置：Disco公司製造，DFD-6361
切晶環：2-8-1(Disco公司製造)
切晶速度：80mm/sec
切晶刀片：
Z1：Disco公司製造之2050HEDD
Z2：Disco公司製造之2050HEBB
切晶刀片轉速：
Z1：40,000rpm
Z2：40,000rpm
刀片高度：
Z1：0.215mm(根據半導體晶圓之厚度(晶圓厚度為75μm時，刀片高度為0.170mm)
Z2：0.085mm
切割方式：A模式/步進切割
晶圓晶片尺寸：1.0mm見方
(拾取)
使用各實施例及比較例之各切晶黏晶膜，按以下之要領，實際進行半導體晶圓之切晶後進行拾取，評價各切晶黏晶膜之性能。
對半導體晶圓(直徑為8英吋，厚度為0.6mm)進行背面研磨處理，使用厚度為0.075mm之鏡面晶圓作為工件。自切晶黏晶膜上剝離分隔件後，於40℃下將鏡面晶圓輥壓接而貼合於該黏晶膜上，進而進行切晶。又，切晶係以達到10mm見方之晶片尺寸之方式進行全切割。
繼而，對各切晶黏晶膜進行紫外線照射，拉伸該等切晶黏晶膜，進行使各晶片間形成特定間隔之延伸步驟。進而，以使用針向上頂之方式自各切晶黏晶膜之基材側拾取半導體晶片，進行拾取性之評價。具體而言，連續拾取400個半導體晶片，將以下述條件A及B進行拾取時之成功率均為100%之情形記為◎，將以條件A進行拾取時之成功率為100%、且以條件B進行拾取時之成功率不為100%之情形記為○，將以條件A及B進行拾取時之成功率均不為100%之情形記為×。
<晶圓研磨條件>
研磨裝置：Disco公司製造之DFG-8560
半導體晶圓：直徑為8英吋(自厚度為0.6mm進行背面研磨至0.075mm)
<貼合條件>
貼附裝置：日東精機製造，MA-3000II
貼附速度：10mm/min
貼附壓力：0.15MPa
貼附時之平台溫度：40℃
<切晶條件>
切晶裝置：Disco公司製造，DFD-6361
切晶環：2-8-1(Disco公司製造)
切晶速度：80mm/sec
切晶刀片：
Z1：Disco公司製造之2050HEDD
Z2：Disco公司製造之2050HEBB
切晶刀片轉速：
Z1：40,000rpm
Z2：40,000rpm
刀片高度：
Z1：0,170mm(根據半導體晶圓之厚度(晶圓厚度為75μm時，刀片高度為0.170mm)
Z2：0.085mm
切割方式：A模式/步進切割
晶圓晶片尺寸：10.0mm見方
<紫外線之照射條件>
紫外線(UV)照射裝置：日東精機(商品名，UM-810製)
紫外線照射累計光量：300mJ/cm2
再者，紫外線照射係自聚烯烴膜側進行。
<拾取條件>
關於拾取條件，係根據下述表3中所示之條件A及條件B分別進行。
(拉伸彈性率之測定方法)
作為測定條件，使初始長度為10mm、剖面面積為0.1~0.5 mm2 來作為樣品尺寸，在測定溫度為23℃、夾盤間距離為50 mm、拉伸速度為50 mm/min之條件下於MD方向或TD方向上進行拉伸試驗，測定各方向之樣品之伸長變化量(mm)。其結果，於所獲得之S-S曲線之初始上升部分拉接線，將該接線相當於伸長100%時之拉伸強度除以基材膜之剖面面積，將所得之值作為拉伸彈性率。再者，關於紫外線照射後之拉伸彈性率之測定，係利用上述照射條件，自聚烯烴膜側照射紫外線後進行。
(切晶環之黏著劑殘留)
自切晶環上剝離切晶膜，以目視確認切晶環上是否產生黏著劑殘留。將確認到黏著劑殘留者記為×，將未確認到者記為○。
1．．．基材
2．．．黏著劑層
2a．．．與半導體晶圓貼附部分相對應之部分
2b．．．其他部分
3、3'．．．黏晶膜
3a．．．半導體晶圓貼附部分
3b．．．半導體晶圓貼附部分以外之部分
4．．．半導體晶圓
5．．．半導體晶片
6．．．被黏附體
7．．．接線
8．．．密封樹脂
9．．．間隔片
10、11．．．切晶黏晶膜
圖1係表示本發明之一實施形態之切晶黏晶膜之剖面模式圖。
圖2係表示本發明之其他實施形態之其他切晶黏晶膜之剖面模式圖。
圖3(a)-(e)係表示介隔上述切晶黏晶膜中之黏晶膜來封裝半導體晶片之例之剖面模式圖。
1．．．基材
2．．．黏著劑層
2a．．．對應於半導體晶圓貼附部分之部分
2b．．．其他部分
3．．．黏晶膜
3a．．．半導體晶圓貼附部分
3b．．．半導體晶圓貼附部分以外之部分
4．．．半導體晶圓
10．．．切晶黏晶膜

Claims (5)

  1. 一種切晶黏晶膜，其特徵在於：於基材上具有包含黏著劑層之切晶膜與設置於該黏著劑層上之黏晶膜，上述黏著劑層含有聚合物，該聚合物係含有作為主要單體之丙烯酸酯、相對於丙烯酸酯而含量為10~30mol%之範圍內之含羥基之單體、相對於含羥基之單體而含量為70~90mol%之範圍內之具有自由基反應性碳-碳雙鍵的異氰酸酯化合物而構成，並且上述黏晶膜係含有環氧樹脂而構成，上述丙烯酸酯為CH2 =CHCOOR(式中，R為碳數6~10之烷基)，上述聚合物之重量平均分子量為35萬~100萬之範圍內，於紫外線照射前，上述黏著劑層於23℃下之拉伸彈性率為0.4~3.5MPa之範圍內。
  2. 如請求項1之切晶黏晶膜，其中上述含羥基之單體為選自由(甲基)丙烯酸2-羥乙酯、(甲基)丙烯酸2-羥丙酯、(甲基)丙烯酸4-羥丁酯、(甲基)丙烯酸6-羥己酯、(甲基)丙烯酸8-羥辛酯、(甲基)丙烯酸10-羥癸酯、(甲基)丙烯酸12-羥月桂酯及(甲基)丙烯酸(4-羥甲基環己基)甲酯所組成之群中之至少任一種。
  3. 如請求項1之切晶黏晶膜，其中上述具有自由基反應性碳-碳雙鍵之異氰酸酯化合物為2-甲基丙烯醯氧基乙基異氰酸酯或2-丙烯醯氧基乙基異氰酸酯中之至少任一種。
  4. 如請求項1之切晶黏晶膜，其中於紫外線照射後，其於23℃下之拉伸彈性率為7~100MPa之範圍內。
  5. 如請求項1之切晶黏晶膜，其中上述黏著劑層不含丙烯酸。
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KR20130122025A (ko) 2013-11-06
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KR20100134739A (ko) 2010-12-23
TWI488939B (zh) 2015-06-21
TW201412930A (zh) 2014-04-01
US20100233409A1 (en) 2010-09-16
KR20100049693A (ko) 2010-05-12
CN101855710A (zh) 2010-10-06
JP2009135377A (ja) 2009-06-18
KR101420993B1 (ko) 2014-07-17
DE112008003005T5 (de) 2010-09-16
JP2010166091A (ja) 2010-07-29
JP4718641B2 (ja) 2011-07-06
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