CN101617395A - 热固化型芯片接合薄膜 - Google Patents

热固化型芯片接合薄膜 Download PDF

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CN101617395A
CN101617395A CN200880005662A CN200880005662A CN101617395A CN 101617395 A CN101617395 A CN 101617395A CN 200880005662 A CN200880005662 A CN 200880005662A CN 200880005662 A CN200880005662 A CN 200880005662A CN 101617395 A CN101617395 A CN 101617395A
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bonding film
die bonding
die
weight
film
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CN200880005662A
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CN101617395B (zh
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高本尚英
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Nitto Denko Corp
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Nitto Denko Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
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Abstract

本发明提供与被粘物的密合性优良、且拾取性良好的热固化型芯片接合薄膜及具备该芯片接合薄膜的切割/芯片接合薄膜。本发明的热固化型芯片接合薄膜，在制造半导体装置时使用，其特征在于，含有15～30重量％热塑性树脂成分及60～70重量％热固性树脂成分作为主成分，并且热固化前的表面自由能为37mJ/m2以上且小于40mJ/m2。

Description

热固化型芯片接合薄膜
技术领域
本发明涉及热固化型芯片接合薄膜及具备该芯片接合薄膜的切割/芯片接合薄膜(dicing/die bonding film)，更具体而言，涉及在将半导体芯片等芯片接合到衬底或引线框等被粘物上时使用的热固化型芯片接合薄膜及具备该芯片接合薄膜的切割/芯片接合薄膜。
背景技术
以往，在半导体装置的制造过程中，将半导体芯片固定到引线框或电极构件上时使用银浆。所述固定处理通过在引线框的芯片焊盘(diepad)等上涂布浆状胶粘剂，在其上安装半导体芯片后使浆状胶粘剂层固化来进行。
但是，浆状胶粘剂因其粘度行为或劣化等而在涂布量或涂布形状等方面产生大的偏差。结果，形成的浆状胶粘剂层厚度不均匀，因此，半导体芯片的固定强度缺乏可靠性。即，如果浆状胶粘剂的涂布量不足，则半导体芯片与电极构件间的固定强度降低，在后续的丝焊工序中半导体芯片剥离。另一方面，如果浆状胶粘剂的涂布量过多，则浆状胶粘剂会流延到半导体芯片上而产生特性不良，成品率、可靠性下降。这种固定处理中的问题随着半导体芯片的大型化变得特别显著。因此，需要频繁地进行浆状胶粘剂涂布量的控制，给操作性和生产率带来障碍。
该浆状胶粘剂的涂布工序中，有将浆状胶粘剂另外涂布到引线框或形成芯片上的方法。但是，该方法中，浆状胶粘剂层难以均匀化，另外浆状胶粘剂的涂布需要特殊装置和长时间。因此，公开了在切割工序中对半导体芯片进行胶粘保持，同时还提供装配工序中需要的芯片固定用胶粘剂层的切割/芯片接合薄膜(例如，参照下述专利文献1)。
该切割/芯片接合薄膜是在支撑基材上依次层压粘合剂层和胶粘剂层而构成。即，在通过胶粘剂层的保持下将半导体芯片切割后，对支撑基材进行拉伸而将芯片状工件与胶粘剂层一起剥离，并将其逐个回收。进而，通过胶粘剂层使芯片状工件固定到引线框等被粘物上。
另一方面，作为半导体芯片的固定中使用的芯片接合用胶粘薄膜(芯片接合薄膜)，可以列举例如热固化型芯片接合薄膜。作为该热固化型芯片接合薄膜，从提高其对于以衬底的布线或半导体芯片上的线等为代表的、由表面凹凸引起的高低差大的被粘物的密合性的观点考虑，使用熔融粘度小的胶粘薄膜。
但是，熔融粘度过小时，存在胶粘剂从芯片接合薄膜中渗出，污染衬底、半导体芯片等问题。另一方面，熔融粘度过大时，存在对被粘物的密合性变差而产生空隙的问题。
这种切割/芯片接合薄膜的芯片接合薄膜，由于其制造工序的制约，多数情况下在胶粘剂层(胶粘薄膜)的整个面上形成。但是，这种情况下，由于使划片环与芯片接合薄膜胶粘，因此有时会污染划片环。另一方面，使芯片接合薄膜与工件的形状相符而在粘合剂层上形成与工件相同形状的方法也是已知的。但是，这种情况下，芯片接合时芯片接合薄膜与芯片间、芯片接合薄膜与被粘物间有时产生气泡(空隙)。结果，成为制作的半导体装置产生故障的原因。
因此，为了提高芯片接合时对被粘物的密合性(埋入性)，使用具备表面自由能大的芯片接合薄膜的切割/芯片接合薄膜。但是，由于表面自由能大，因此与切割薄膜的密合性也提高，由此，存在拾取工序中芯片接合薄膜与切割薄膜无法剥离，从而无法拾取的问题。
专利文献1：日本特开昭60-57342号公报
发明内容
本发明鉴于以上问题而进行，其目的在于提供与被粘物的密合性优良、且拾取性良好的热固化型芯片接合薄膜及具备该芯片接合薄膜的切割/芯片接合薄膜。
为了解决上述现有问题，本发明人对热固化型芯片接合薄膜及具备该芯片接合薄膜的切割/芯片接合薄膜进行了研究。结果发现，通过采用下述构成能够实现上述目的，并且完成了本发明。
即，本发明的热固化型芯片接合薄膜，在制造半导体装置时使用，其特征在于，含有15～30重量％热塑性树脂成分及60～70重量％热固性树脂成分作为主成分，并且热固化前的表面自由能为37mJ/m2以上且小于40mJ/m2。
根据所述构成，由于将热塑性树脂成分的下限设定为15重量％、将热固性树脂成分的上限设定为70重量％、并且将所述芯片接合薄膜在热固化前的表面自由能设定为37mJ/m2以上，因此使其对衬底等被粘物的密合性良好。结果，在与衬底或引线框等被粘物的胶粘面上，能够减少空隙的产生。另一方面，由于将热塑性树脂成分的上限设定为30重量％、将热固性树脂成分的下限设定为60重量％、并且将所述表面自由能设定为小于40mJ/m2，因此在例如制成将本发明的芯片接合薄膜与切割薄膜层压的切割/芯片接合薄膜时，芯片接合薄膜对切割薄膜的剥离性良好。结果，能够提高拾取工序时的拾取性，并提高制造半导体装置的成品率。
所述芯片接合薄膜热固化后在250℃的拉伸储存弹性模量优选为10MPa以上。由此，即使在例如对热固化型芯片接合薄膜上固定的半导体芯片进行丝焊时，也能够防止由于超声波振动或加热而在芯片接合薄膜与被粘物的胶粘面上产生剪切变形。结果，能够提高丝焊的成功率，并进一步提高成品率而制造半导体装置。
所述芯片接合薄膜热固化后的玻璃化转变温度优选为175℃以上。由此，能够防止例如密封工序中半导体元件的倾斜，另外，能够防止回流焊接工序时芯片接合薄膜与被粘物之间发生剥离。
所述利用加热进行的热固化后，在85℃、85％RH的环境中放置168小时后的吸水率优选为1重量％以下。通过将吸水率设定为1重量％以下，能够防止例如回流焊接工序中产生空隙。
所述利用加热进行的热固化后，在250℃加热1小时后的重量减少量优选为1重量％以下。通过将重量减少量设定为1重量％以下，能够防止例如回流焊接工序中封装体产生裂纹。
另外，为了解决上述问题，本发明的切割/芯片接合薄膜的特征在于，所述热固化型芯片接合薄膜层压在粘合薄膜上。
发明效果
通过前面说明的手段，本发明发挥下述效果。
即，根据本发明，通过含有15～30重量％热塑性树脂成分及60～70重量％热固性树脂成分作为主成分，并且将热固化前的表面自由能设定为37mJ/m2以上且小于40mJ/m2，能够提高对于被粘物的密合性并防止空隙的产生，同时使拾取工序时的拾取性良好。结果，能够以良好的成品率制造可靠性高的半导体装置。
附图说明
图1是显示本发明实施方式之一的切割/芯片接合薄膜的断面示意图。
图2是显示本发明另一实施方式的切割/芯片接合薄膜的断面示意图。
图3是显示通过本发明实施方式之一的芯片接合薄膜安装半导体芯片的例子的断面示意图。
图4是显示通过所述芯片接合薄膜三维安装半导体芯片的例子的断面示意图。
图5是显示使用所述芯片接合薄膜，隔着垫片(spacer)三维安装两个半导体芯片的例子的断面示意图。
标记说明
3a      芯片接合薄膜(热固化型芯片接合薄膜)
5       半导体芯片(半导体元件)
6       衬底等(被粘物)
7       焊线
8       密封树脂
9       垫片
10，11  切割/芯片接合薄膜
13      芯片接合薄膜(热固化型芯片接合薄膜)
15      半导体芯片(半导体元件)
21      芯片接合薄膜(热固化型芯片接合薄膜)
具体实施方式
(切割/芯片接合薄膜)
对于本发明的热固化型芯片接合薄膜(以下，称为“芯片接合薄膜”)，以与切割薄膜(粘合薄膜)层压为一体的切割/芯片接合薄膜为例进行如下说明。图1是显示本实施方式的切割/芯片接合薄膜的断面示意图。图2是显示本实施方式的另一个切割/芯片接合薄膜的断面示意图。
如图1所示，切割/芯片接合薄膜10具有在切割薄膜11上层压芯片接合薄膜3的构成。切割薄膜11是在支撑基材1上层压粘合剂层2而构成，芯片接合薄膜3设置在该粘合剂层2上。另外，如图2所示，本发明也可以是仅在工件粘贴部分形成芯片接合薄膜3’的构成。
所述基材1具有紫外线透射性，并且作为切割/芯片接合薄膜10、12的强度母体。可以列举例如：低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚聚丙烯、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-醋酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳香族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、氟树脂、聚氯乙烯、聚偏氯乙烯、纤维素类树脂、硅氧烷(silicone)树脂、金属(箔)、纸等。
另外，作为基材1的材料，可以列举上述树脂的交联物等聚合物。所述塑料薄膜可以不拉伸而使用，根据需要也可以进行单轴或双轴拉伸处理后使用。利用经拉伸处理等而赋予了热收缩性的树脂片，通过在切割后使它的基材1热收缩，能够降低粘合剂层2与芯片接合薄膜3、3’的胶粘面积，从而容易回收半导体芯片。
为了提高与邻接层的密合性和保持性等，基材1的表面可以进行常规的表面处理，例如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、离子化射线处理等化学或物理处理、利用底涂剂(例如，后述的粘合物质)的涂布处理等。
所述基材1，可以适当选择使用同种或异种材料，根据需要也可以将多种混合使用。另外，为了对基材1赋予防静电性能，可以在所述基材1上设置含有金属、合金、它们的氧化物等的厚度约
Figure G2008800056620D00061
～约
Figure G2008800056620D00071
的导电物质的蒸镀层。基材1可以是单层或2种以上的多层。
基材1的厚度没有特别限制，可以适当设定，一般为约5μm～约200μm。
所述粘合剂层2含有紫外线固化型粘合剂。紫外线固化型粘合剂可以通过紫外线照射使交联度增大从而容易地使其粘合力降低，通过仅对与图2所示的粘合剂层2的半导体晶片粘贴部分对应的部分2a进行紫外线照射，能够设定与其余部分2b的粘合力差。
另外，通过使紫外线固化型粘合剂层2与图2所示的芯片接合薄膜3’贴在一起而固化，能够容易地形成粘合力显著下降的所述部分2a。由于芯片接合薄膜3’粘贴在固化且粘合力下降的所述部分2a上，因此粘合剂层2的所述部分2a与芯片接合薄膜3’的界面具有在拾取时容易剥离的性质。另一方面，未照射紫外线的部分具有充分的粘合力，形成所述部分2b。
如前所述，图1所示的切割/芯片接合薄膜10的粘合剂层2中，由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合薄膜3粘合，能够确保切割时的保持力。这样，紫外线固化型粘合剂能够以良好的胶粘、剥离平衡支撑用于将半导体芯片固定到衬底等被粘物上的芯片接合薄膜3。图2所示的切割/芯片接合薄膜11的粘合剂层2中，所述部分2b能够固定贴片环(wafer ring)。
所述紫外线固化型粘合剂可以没有特别限制地使用具有碳碳双键等紫外线固化型官能团并且显示粘合性的粘合剂。作为紫外线固化型粘合剂，可以列举例如：在丙烯酸类粘合剂、橡胶类粘合剂等普通的压敏粘合剂中混合紫外线固化型单体成分或低聚物成分而成的添加型紫外线固化型粘合剂。
作为所述压敏粘合剂，从半导体晶片或玻璃等避免污染的电子部件的超纯水或醇等有机溶剂的清洗性能等观点考虑，优选以丙烯酸类聚合物作为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物，可以列举例如：使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷基酯、十二烷基酯、十三烷基酯、十四烷基酯、十六烷基酯、十八烷基酯、二十烷基酯等烷基的碳原子数1～30、特别是碳原子数4～18的直链或支链烷基酯等)及(甲基)丙烯酸环烷基酯(例如，环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外，(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯，本发明的(甲基)全部为同样含义。
为了改善凝集力和耐热性等，根据需要，所述丙烯酸类聚合物可以含有与能够与所述(甲基)丙烯酸烷基酯或环烷基酯共聚的其它单体成分对应的单元。作为这样的单体成分，可以列举例如：丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体；马来酸酐、衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；丙烯酰磷酸-2-羟乙酯等含磷酸基单体；丙烯酰胺；丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的用量优选为单体成分总量的40重量％以下。
另外，为了发生交联，根据需要，所述丙烯酸类聚合物也可以含有多官能单体等作为共聚单体成分。作为这样的多官能单体，可以列举例如：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体可以使用一种或两种以上。从粘合特性等观点考虑，多官能单体的用量优选为单体成分总量的30重量％以下。
所述丙烯酸类聚合物通过将单一单体或两种以上单体的混合物进行聚合而得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止污染清洁的被粘物等观点考虑，优选低分子量物质的含量小。考虑这一点，丙烯酸类聚合物的数均分子量优选为30万以上、更优选为约40万至约300万。
另外，为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量，所述粘合剂中也可以适当采用外部交联剂。作为外部交联方法的具体手段，可以列举添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂而进行反应的方法。使用外部交联剂时，其用量根据与要交联的基础聚合物的平衡、以及作为粘合剂的使用用途适当确定。一般而言，相对于所述基础聚合物100重量份，优选配合约5重量份以下、更优选配合0.1～5重量份。另外，根据需要，粘合剂中除前述成分以外也可以使用现有公知的各种增粘剂、抗老化剂等添加剂。
作为混合的所述紫外线固化性单体成分，可以列举例如：氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1，4-丁二醇二(甲基)丙烯酸酯等。另外，紫外线固化性低聚物成分可以列举氨基甲酸酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物，其分子量优选在约100至约30000的范围内。紫外线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类，适当确定使粘合剂层的粘合力下降的量。一般而言，相对于100重量份构成粘合剂的丙烯酸类聚合物等基础聚合物，例如为约5重量份至约500重量份、优选为约40重量份至约150重量份。
另外，作为紫外线固化型粘合剂，除前面说明的添加型紫外线固化型粘合剂以外，还可以列举：使用在聚合物侧链或主链中或主链末端具有碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂不需要含有或者多数不含有作为低分子量成分的低聚物成分，因此低聚物成分等不会随时间推移在粘合剂中移动，能够形成层结构稳定的粘合剂层，因此优选。
所述具有碳碳双键的基础聚合物，可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物，优选以丙烯酸类聚合物为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架，可以列举前面例示的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制，可以采用各种方法，但在聚合物侧链中引入碳碳双键在分子设计上比较容易。例如，可以列举下述方法：预先使具有官能团的单体与丙烯酸类聚合物共聚后，使具有能够与该官能团反应的官能团及碳碳双键的化合物在保持碳碳双键的紫外线固化性的状态下进行缩合或加成反应。
作为这些官能团的组合例，可以列举羧酸基与环氧基、羧酸基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中，从跟踪反应的容易度考虑，优选羟基与异氰酸酯基的组合。另外，根据这些官能团组合的不同，如果是生成所述具有碳碳双键的丙烯酸类聚合物这样的组合，则官能团可以在丙烯酸类聚合物和所述化合物的任何一者上，而在所述优选组合的情况下，优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基。此时，作为具有碳碳双键的异氰酸酯化合物，可以列举例如：甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α，α-二甲基苯偶酰异氰酸酯等。另外，作为丙烯酸类聚合物，可以使用前面列举的含羟基单体或2-羟乙基乙烯基醚、4-羟丁基乙烯基醚、二乙二醇单乙烯基醚这些醚类化合物等共聚而成的聚合物。
所述内在型紫外线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物)，也可以在不使特性变差的程度内混合所述紫外线固化性单体成分或低聚物成分。紫外线固化性低聚物成分等相对于100重量份基础聚合物通常在30重量份的范围内，优选在0至10重量份的范围内。
所述紫外线固化型粘合剂中，在通过紫外线等进行固化时含有光聚合引发剂。作为光聚合引发剂，可以列举例如：4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α，α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物；甲氧基苯乙酮、2，2’-二甲氧基-2-苯基苯乙酮、2，2’-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉代丙烷-1等苯乙酮类化合物；苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物；苯偶酰二甲基缩酮等缩酮类化合物；2-萘磺酰氯等芳香族磺酰氯类化合物；1-苯酮-1，1-丙二酮-2-(o-乙氧基羰基)肟等光活性肟类化合物；二苯甲酮、苯甲酰基苯甲酸、3，3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物；噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2，4-二甲基噻吨酮、异丙基噻吨酮、2，4-二氯噻吨酮、2，4-二乙基噻吨酮、2，4-二异丙基噻吨酮等噻吨酮类化合物；樟脑醌；卤化酮；酰基氧化膦；酰基膦酸酯等。光聚合引发剂的配合量相对于100重量份构成粘合剂的丙烯酸类聚合物等基础聚合物例如为约0.05重量份至约20重量份。
另外，作为紫外线固化型粘合剂，可以列举例如日本特开昭60-196956号公报中公开的包含具有两个以上不饱和键的可加聚化合物、具有环氧基的烷氧基硅烷等可光聚合化合物和羰基化合物、有机硫化合物、过氧化物、胺、鎓盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
所述粘合剂层2在紫外线固化后对芯片接合薄膜3、3’的粘合力为0.001～1N/10mm宽度，优选为0.005～0.5N/10mm宽度，更优选为0.01～0.1N/10mm宽度(180度剥离的剥离力、剥离速度300mm/mm)。如果在上述数值范围内，则在拾取带芯片接合薄膜的胶粘剂的半导体芯片时，该半导体芯片不会超出需要地固定而实现更良好的拾取性。
作为在所述粘合剂层2中形成所述部分2a的方法，可以列举在基材1上形成紫外线固化型粘合剂层2后对所述部分2a部分地照射紫外线而使其固化的方法。部分紫外线照射可以通过形成与半导体晶片粘贴部分3a以外的部分3b等对应的图案的光掩模来进行。另外，可以列举点式照射紫外线而进行固化的方法等。紫外线固化型粘合剂层2的形成可以通过将设置在隔膜(separator)上的紫外线固化型粘合剂层转印到基材1上来进行。部分紫外线固化也可以对在隔膜上设置的紫外线固化型粘合剂层2进行。
切割/芯片接合薄膜10的粘合剂层2中，也可以对粘合剂层2的一部分进行紫外线照射，以使所述部分2a的粘合力＜其它部分2b的粘合力。即，可以使用对基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或一部分进行遮光的基材1，在其上形成紫外线固化型粘合剂层2后进行紫外线照射，使与半导体晶片粘贴部分3a对应的部分固化，从而形成粘合力降低的前述部分2a。作为遮光材料，可以通过在支撑薄膜上印刷或蒸镀能够形成光掩模的材料来制作。由此，能够高效制造本发明的切割/芯片接合薄膜10。
粘合剂层2的厚度没有特别限制，从同时防止芯片切割面缺陷和保持胶粘层固定的观点考虑，优选为约1μm～约50μm。优选为2～30μm、更优选为5～25μm。
芯片接合薄膜3、3’含有15～30重量％热塑性树脂成分和60～70重量％热固性树脂成分作为主成分。另外，其表面自由能在热固化前为37mJ/m2以上且小于40mJ/m2。
通过将所述热塑性树脂成分的下限设定为15重量％、将热固性树脂成分的上限设定为70重量％，使所述胶粘薄膜的热固化前的表面自由能为37mJ/m2以上。结果，能够使芯片接合薄膜对被粘物的密合性良好。另一方面，通过将热塑性树脂成分的上限设定为30重量％、将热固性树脂成分的下限设定为60重量％，使所述表面自由能小于40mJ/m2。结果，能够使其与粘合剂层2的剥离性良好，提高后述拾取工序时的拾取性。
另外，所述芯片接合薄膜热固化后在250℃下的拉伸储存弹性模量优选为10MPa以上，更优选为15～100MPa。拉伸储存弹性模量的调节例如可以通过调节无机填料的添加量来进行。另外，热固化是指例如在80～240℃、优选80～175℃、更优选100～175℃下进行0.1～24小时、优选0.1～4小时、更优选0.1～1小时热处理的情况。
另外，所述芯片接合薄膜热固化后的玻璃化转变温度优选为175℃以上、更优选为185～210℃。通过将玻璃化转变温度设定为175℃以上，能够防止后述密封工序中半导体元件倾斜，另外，能够防止回流焊接工序时芯片接合薄膜与被粘物间发生剥离。芯片接合薄膜热固化后的玻璃化转变温度的调节例如可以通过调节热固性树脂的添加量来进行。此时，为了使玻璃化转变温度为175℃以上，相对于热塑性树脂成分100重量份，热固性树脂的添加量优选为400～1000重量％。
所述芯片接合薄膜热固化后在85℃、85％RH的环境中放置168小时时的吸水率优选为1重量％以下。通过将吸水率设定为1重量％以下，可以防止例如回流焊接工序中产生空隙。吸水率的调节例如可以通过调节无机填料的添加量来进行。
所述利用加热进行的热固化后，在250℃加热1小时后的重量减少量优选为1重量％以下。通过将重量减少量设定为1重量％以下，能够防止例如回流焊接工序中封装体产生裂纹。重量减少量的调节例如可以通过调节无机填料的添加量来进行。
芯片接合薄膜3、3’的层压结构没有特别限制，可以列举例如：仅由单层胶粘剂层构成的结构、或在芯材的单面或双面上形成胶粘剂层的多层结构。作为所述芯材，可以列举：薄膜(例如，聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
作为所述热塑性树脂，可以列举：天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁二烯橡胶、乙烯-醋酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙-6或尼龙-6，6等聚酰胺树脂、苯氧基树脂、丙烯酸树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、能够确保半导体元件可靠性的丙烯酸树脂。
作为所述丙烯酸树脂，没有特别限制，可以列举以一种或两种以上具有碳原子数30以下、特别是碳原子数4～18的直链或支链烷基的丙烯酸或甲基丙烯酸的酯作为成分的聚合物等。作为所述烷基，可以列举例如：甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或十二烷基等。
另外，作为形成所述聚合物的其它单体，没有特别限制，可以列举例如：丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等含羧基单体；马来酸酐或衣康酸酐等酸酐单体；(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸-(4-羟甲基环己基)甲酯等含羟基单体；苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等含磺酸基单体；或丙烯酰磷酸2-羟乙酯等含磷酸基单体。
作为所述热固性树脂，可以列举酚树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、硅氧烷树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等含量少的环氧树脂。另外，作为环氧树脂的固化剂优选酚树脂。
所述环氧树脂只要是通常作为胶粘剂组合物使用的环氧树脂则没有特别限制，可以列举例如：双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四酚基乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油基胺型环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三羟苯基甲烷型树脂或四酚基乙烷型环氧树脂。这是因为这些环氧树脂与作为固化剂的酚树脂的反应性高、并且耐热性等优良。
另外，所述酚树脂作为所述环氧树脂的固化剂起作用，可以列举例如：苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚树脂、甲阶酚醛树脂(resol)型酚树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚树脂可以单独使用或者两种以上组合使用。这些酚树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为它们能够提高半导体装置的连接可靠性。
所述环氧树脂与酚树脂的配比，优选例如以相对于所述环氧树脂成分中每1当量环氧基，酚树脂中的羟基为0.5～2.0当量的比例进行配合。更优选为0.8～1.2当量。即，两者的配比如果偏离上述范围，则不能进行充分的固化反应，环氧树脂固化物的特性容易变差。
另外，本发明中，特别优选使用了环氧树脂、酚树脂及丙烯酸树脂的芯片接合薄膜。这些树脂中离子性杂质少并且耐热性高，因此能够确保半导体元件的可靠性。此时的配比是：相对于100重量份丙烯酸树脂成分，环氧树脂与酚树脂的混合量为10～1000重量份。
在使本发明的芯片接合薄膜3、3’预先进行某种程度的交联时，优选在制作时添加能够与聚合物分子链末端的官能团等反应的多官能化合物作为交联剂。由此，能够提高高温下的胶粘特性，并改善耐热性。
作为所述交联剂，可以采用现有公知的交联剂。特别是更优选甲苯二异氰酸酯、二苯基甲烷二异氰酸酯、对苯二异氰酸酯、1，5-萘二异氰酸酯、多元醇与二异氰酸酯的加成物等多异氰酸酯化合物。交联剂的添加量相对于所述聚合物100重量份通常优选为0.05～7重量份。交联剂的量如果多于7重量份则胶粘力下降，因此不优选。另一方面，如果少于0.05重量份则凝集力不足因此不优选。另外，根据需要，也可以与这种多异氰酸酯化合物一起含有环氧树脂等其它多官能化合物。
另外，芯片接合薄膜3、3’中根据其用途可以适当混合无机填充剂。无机填充剂的混合能够赋予导电性、提高导热性、调节弹性模量等。作为所述无机填充剂，可以列举例如：二氧化硅、粘土、石膏、碳酸钙、硫酸钡、氧化铝、氧化铍、碳化硅、氮化硅等陶瓷类、铝、铜、银、金、镍、铬、铅、锡、锌、钯、焊锡等金属或合金类、以及含碳的各种无机粉末。这些材料可以单独使用或者两种以上组合使用。其中，特别优选使用熔融二氧化硅。另外，无机填充剂的平均粒径优选在0.1～80μm的范围内。
所述无机填充剂的混合量，相对于有机树脂成分100重量份为0～200重量份、优选为0～150重量份、更优选为0～80重量份、特别优选为0～70重量份。另外，将芯片接合薄膜热固化后在250℃下的拉伸储存弹性模量调节到10MPa以上时，相对于有机树脂成分100重量份，无机填充剂的混合量进一步优选为50～150重量份、更优选为0～15重量份。另外，将芯片接合薄膜热固化后在85℃、85％RH的环境中放置168小时时的吸水率调节到1重量％以下时，相对于有机树脂成分100重量份，无机填充剂的混合量进一步优选为50～150重量份。。
另外，除上述无机填充剂以外，根据需要，芯片接合薄膜3、3’中也可以适当混合其它添加剂。作为其它添加剂，可以列举例如：阻燃剂、硅烷偶联剂或离子捕集剂等。
作为所述阻燃剂，可以列举例如：三氧化锑、五氧化锑、溴化环氧树脂等。这些阻燃剂可以单独使用或者两种以上组合使用。
作为所述硅烷偶联剂，可以列举例如：β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。
作为所述离子捕集剂，可以列举例如：水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
芯片接合薄膜3、3’的厚度(层压体的情况下指总厚度)没有特别限制，例如，为约5μm～约100μm，优选为约5μm～约50μm。
所述切割/芯片接合薄膜10、12的芯片接合薄膜3、3’优选由隔膜进行保护(未图示)。隔膜具有作为在供给实用之前保护芯片接合薄膜3、3’的保护材料的功能。另外，隔膜还能够作为在粘合剂层2上转印芯片接合薄膜3、3’时的支撑基材使用。隔膜在向切割/芯片接合薄膜的芯片接合薄膜3、3’上粘贴工件时剥离。作为隔膜，可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或者利用氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行了表面涂覆的塑料薄膜或纸等。
(半导体装置的制造方法)
本发明的切割/芯片接合薄膜10、12，在将芯片接合薄膜3、3’上任选设置的隔膜适当剥离后按如下方式使用。以下，参照附图以使用切割/芯片接合薄膜10的情况为例进行说明。
首先，如图1所示，将半导体晶片4压接在切割/芯片接合薄膜10中芯片接合薄膜3的半导体晶片粘贴部分3a上，并使其保持胶粘而固定(装配工序)。本工序使用压接辊等挤压工具挤压来进行。
然后，进行半导体晶片4的切割。由此，将半导体晶片4切割为规定的尺寸而小片化，制造半导体芯片5。切割是按照常规方法例如从半导体晶片4的电路面一侧来进行。另外，本工序中，可以采用例如切入至切割/芯片接合薄膜10的、称为全切的切割方式等。本工序中使用的切割装置没有特别限制，可以使用现有公知的切割装置。另外，由于半导体晶片由切割/芯片接合薄膜10胶粘固定，因此能够抑制芯片缺陷和芯片飞离，并且也能够抑制半导体晶片4的破损。
为了剥离由切割/芯片接合薄膜10胶粘固定的半导体芯片，进行半导体芯片5的拾取。拾取方法没有特别限制，可以采用现有公知的各种方法。例如，可以列举用针从切割/芯片接合薄膜10一侧将各个半导体芯片5向上推，通过拾取装置拾取被上推的半导体芯片5的方法等。
在此，由于粘合剂层2为紫外线固化型，因此在对该粘合剂层2照射紫外线后进行拾取。由此，粘合剂层2对芯片接合薄膜3a的粘合力下降，能够容易地剥离半导体芯片5。结果，能够不损伤半导体芯片而进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制，根据需要适当设定即可。另外，紫外线照射使用的光源可以使用前述的光源。
拾取的半导体芯片5通过芯片接合薄膜3a胶粘固定在被粘物6上(芯片接合)。作为被粘物6，可以列举引线框、TAB薄膜、衬底或另外制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物、也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底，可以使用现有公知的衬底。另外，作为所述引线框，可以使用Cu引线框、42合金引线框等金属引线框或由玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等制成的有机衬底。但是，本发明不限于这些，还包括装配半导体元件，与半导体元件电连接后能够使用的电路衬底。
芯片接合薄膜3为热固化型时，通过加热固化使半导体芯片5胶粘固定在被粘物6上，提高耐热强度。另外，通过半导体晶片粘贴部分3a使半导体芯片5胶粘固定在衬底等上而得到的制品可以供给回流焊接工序。
另外，所述芯片接合也可以不使芯片接合薄膜3固化而仅仅暂时固着在被粘物上。之后，不经加热工序而进行丝焊，进而用密封树脂将半导体芯片密封，也可以对该密封树脂进行后固化。
此时，作为芯片接合薄膜3，使用暂时固着时对被粘物6的剪切胶粘力为0.2MPa以上的芯片接合薄膜3、更优选使用在0.2～10MPa范围内的芯片接合薄膜3。芯片接合薄膜3的剪切胶粘力如果为至少0.2MPa以上，则即使不经加热工序而进行丝焊，在芯片接合薄膜3与半导体芯片5或被粘物6的胶粘面上也不会因该工序中的超声波振动或加热而产生剪切变形。即，半导体元件不会因丝焊时的超声波振动而移动，由此防止丝焊成功率降低。
所述丝焊是通过焊线7将被粘物6的端子部(内部引线)的末端与半导体芯片上的电极焊盘(未图示)电连接的工序(参照图3)。作为所述焊线7，可以使用例如：金线、铝线或铜线等。进行丝焊时的温度在80～250℃、优选80～220℃的范围内进行。另外，其加热时间进行数秒～数分钟。接线是在加热到所述温度范围内的状态下，通过组合使用超声波的振动能和施加电压加压的压接能来进行。
本工序可以不进行利用芯片接合薄膜3a的固着而实施。另外，本工序的过程中，不利用芯片接合薄膜3a使半导体芯片5与被粘物6固着。
所述密封工序，是利用密封树脂8对半导体芯片5进行密封的工序(参照图3)。本工序是为了保护被粘物6上搭载的半导体芯片5和焊线7而进行的。本工序通过用金属模具将密封用树脂成形来进行。作为密封树脂8，可以使用例如环氧类树脂。树脂密封时通常在175℃的加热温度下进行60～90秒，但是，本发明不限于此，例如，也可以在165℃～185℃下进行数分钟的固化。由此，使密封树脂固化，同时通过芯片接合薄膜3a使半导体芯片5与被粘物6固着。即，本发明中，即使在不进行后述的后固化工序的情况下，在本工序中也能够利用芯片接合薄膜3a进行固着，从而能够有助于制造工序数的减少及半导体装置制造周期的缩短。
所述后固化工序中，使在所述密封工序中固化不充分的密封树脂8完全固化。即使在密封工序中未利用芯片接合薄膜3a进行固着的情况下，在本工序中也能够在密封树脂8固化的同时利用芯片接合薄膜3a进行固着。本工序中的加热温度因密封树脂种类而异，例如，在165～185℃的范围内，加热时间为约0.5小时～约8小时。
另外，如图4所示，本发明的切割/芯片接合薄膜也能够优选用于将多个半导体芯片层压而进行三维安装的情况。图4是显示通过芯片接合薄膜三维安装半导体芯片的例子的断面示意图。图4所示的三维安装的情况下，首先将切割为与半导体芯片相同尺寸的至少一个芯片接合薄膜3a暂时固着在被粘物6上，然后通过芯片接合薄膜3a将半导体芯片5暂时固着，使半导体芯片5的丝焊面为上侧。然后，避开半导体芯片5的电极焊盘部分将芯片接合薄膜13暂时固着。进而，将另一个半导体芯片15暂时固着在芯片接合薄膜13上，使半导体芯片15的丝焊面为上侧。
然后，不进行加热工序而进行丝焊工序。由此，通过焊线7将半导体芯片5及另一个半导体芯片15的各个电极焊盘与被粘物6电连接。
接着，进行利用密封树脂8将半导体芯片5等密封的密封工序，使密封树脂固化。与此同时，被粘物6与半导体芯片5之间通过芯片接合薄膜3a固着。另外，半导体芯片5与另一个半导体芯片15之间也通过芯片接合薄膜13固着。另外，密封工序后也可以进行后固化工序。
即使在半导体芯片的三维安装的情况下，由于不对芯片接合薄膜3a、13进行利用加热的加热处理，因此实现了制造工序的简化和成品率的提高。另外，由于不会发生被粘物6产生翘曲，或半导体芯片5和另一个半导体芯片15产生裂纹的情况，因此，能够使半导体元件进一步薄型化。
另外，如图5所示，也可以进行通过芯片接合薄膜在半导体芯片间层压垫片的三维安装。图5是显示利用芯片接合薄膜隔着垫片三维安装两个半导体芯片的例子的断面示意图。
图5所示的三维安装的情况下，首先在被粘物6上依次层压芯片接合薄膜3a、半导体芯片5和芯片接合薄膜21而使其暂时固着。进而，在芯片接合薄膜21上依次层压垫片9、芯片接合薄膜21、芯片接合薄膜3a和半导体芯片5而使其暂时固着。
然后，如图5所示，不进行加热工序而进行丝焊工序。由此，通过焊线7将半导体芯片5的电极焊盘与被粘物6电连接。
接着，进行利用密封树脂8将半导体芯片5密封的密封工序，使密封树脂8固化，同时使被粘物6与半导体芯片5之间、以及半导体芯片5与垫片9之间通过芯片接合薄膜3a、21而固着。由此，得到半导体封装体。密封工序优选仅将半导体芯片5侧单面密封的一次性密封法。密封是为了保护粘合片粘贴上的半导体芯片5而进行的，作为其方法有代表性的是使用密封树脂8在金属模具中成形的方法。此时，通常使用由具有多个腔室的上金属模具和下金属模具构成的金属模具，同时进行密封工序。树脂密封时的加热温度，优选例如在170～180℃的范围内。密封工序后也可以进行后固化工序。
另外，作为所述垫片9没有特别限制，例如，可以使用例如现有公知的硅片、聚酰亚胺薄膜等。另外，所述垫片也可以使用芯材。作为芯材没有特别限制，可以使用现有公知的芯材。具体而言，可以使用薄膜(例如，聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅晶片、硅衬底或玻璃衬底等。
然后，在印刷电路板上进行所述半导体芯片的表面安装。表面安装的方法可以列举例如：在印刷电路板上预先供给焊料后，通过暖风加热熔融而进行焊接的回流焊接。作为加热方法，可以列举例如热风回流、红外线回流等。另外，整体加热、局部加热的任何一种方式皆可。加热温度优选在240～265℃范围内，加热时间优选在1～20秒范围内。
(其它事项)
在所述衬底等上三维安装半导体元件时，在形成半导体元件电路一侧的面上形成缓冲涂膜。作为该缓冲涂膜可以列举例如由氮化硅膜或聚酰亚胺树脂等耐热树脂形成的缓冲涂膜。
另外，半导体元件的三维安装时，各阶段使用的芯片接合薄膜不限于同一组成的芯片接合薄膜，可以根据制造条件或用途等适当变更。
另外，上述实施方式中，对在衬底等上层压多个半导体元件后，一次性进行丝焊工序的方式进行了说明，但是，本发明不限于此。例如，也可以在每次将半导体元件层压到衬底等上后进行丝焊工序。
实施例
以下，举例对本发明的优选实施例进行详细说明。但是，该实施例中记载的材料或配合量等，如果没有特别限定的记载，则并不意味本发明的范围仅限于这些记载，只不过是举例而已。另外，“份”表示“重量份”。
(实施例1)
使相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制，パラクロンW-197CM)为144份的环氧树脂1(JER株式会社制，エピコ一ト1004)、130份环氧树脂2(JER株式会社制，エピコ一ト827)、293份酚树脂(三井化学株式会社制，ミレツクスXLC-4L)、444份球形二氧化硅(アドマテツクス株式会社制，SO-25R)和2份固化催化剂(四国化成株式会社制，C11-Z)溶解于甲乙酮中，制成浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物的溶液涂布于作为剥离衬里的由进行了硅氧烷脱模处理的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜上，并在130℃下干燥2分钟。由此，制成厚度40μm的芯片接合薄膜A。
(实施例2)
使相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制，パラクロンW-197CM)为126份的环氧树脂1(JER株式会社制，エピコ一ト1004)、68份环氧树脂2(JER株式会社制，エピコ一ト827)、206份酚树脂(三井化学株式会社制，ミレツクスXLC-4L)、333份球形二氧化硅(アドマテツクス株式会社制，SO-25R)和1.5份固化催化剂(四国化成株式会社制，C11-Z)溶解于甲乙酮中，制成浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物的溶液涂布于作为剥离衬里的由进行了硅氧烷脱模处理的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜上，并在130℃下干燥2分钟。由此，制成厚度40μm的芯片接合薄膜B。
(比较例1)
使相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制，パラクロンW-197CM)为228份的环氧树脂1(JER株式会社制，エピコ一ト1004)、206份环氧树脂2(JER株式会社制，エピコ一ト827)、465份酚树脂(三井化学株式会社制，ミレツクスXLC-4L)、667份球形二氧化硅(アドマテツクス株式会社制，SO-25R)和1份固化催化剂(四国化成株式会社制，C11-Z)溶解于甲乙酮中，制成浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物的溶液涂布于作为剥离衬里的由进行了硅氧烷脱模处理的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜上，并在130℃下干燥2分钟。由此，制成厚度40μm的芯片接合薄膜C。
(比较例2)
使相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(根上工业株式会社制，パラクロンW-197CM)为88份的环氧树脂1(JER株式会社制，エピコ一ト1004)、26份环氧树脂2(JER株式会社制，エピコ一ト827)、119份酚树脂(三井化学株式会社制，ミレツクスXLC-4L)、222份球形二氧化硅(アドマテツクス株式会社制，SO-25R)和2份固化催化剂(四国化成株式会社制，C11-Z)溶解于甲乙酮中，制成浓度23.6重量％的胶粘剂组合物。
将该胶粘剂组合物的溶液涂布于作为剥离衬里的由进行了硅氧烷脱模处理的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜上，并在130℃下干燥2分钟。由此，制成厚度40μm的芯片接合薄膜D。
(表面自由能)
对各实施例及比较例得到的芯片接合薄膜A～D，计算其热固化前的表面自由能。即，使用接触角仪测定水及碘甲烷的接触角，通过几何平均法由它们的接触角计算表面自由能值。结果示于表1。
(拾取性)
将各实施例及比较例得到的芯片接合薄膜A～D粘贴到8英寸镜面硅晶片(厚度75μm)上。进而，在40℃下向芯片接合薄膜上粘贴切割带(日东电工株式会社制V-8-T)，同时粘贴切割环，使镜面硅晶片位于切割环的内侧。
使用DISCO公司制DFD651将该带芯片接合薄膜的晶片切割为2mm见方。使用的刀片是126F-SE27HABB(DISCO公司制)，切割速度为30mm/秒。
然后，使用芯片接合器(SPA-300，新川株式会社制)拾取通过切割制作的硅芯片，进行拾取性评价。具体而言，拾取100个硅芯片，对其成功的数目进行计数。
(空隙面积)
在40℃下将各实施例及比较例得到的芯片接合薄膜A～D分别粘贴到半导体元件上，并以160℃、500gf、2s的条件装配到BGA衬底上。然后，在175℃下进行1小时加热固化，用密封树脂(日东电工株式会社制，GE-100)进行封装，制造半导体装置(TFBGA封装体16×16×0.7mm、芯片尺寸5×5mm)。
用玻璃刀切割密封后的半导体装置，用显微镜观察其断面，测定芯片接合薄膜A～D与BGA衬底的贴合面上的空隙面积。
(玻璃化转变温度Tg的测定)
对得到的芯片接合薄膜A～D，使用粘弹性测定装置(RheometicScientific公司制，Solid Analyzer RSII)，从升温速度10℃/分钟、频率1MHz下的Tan(E”(弹性模量损失)/E’(储存弹性模量))测定热固化后的玻璃化转变温度。
(吸水率测定)
对得到的芯片接合薄膜A～D，从在85℃、85％RH的恒温恒槽中放置168小时前后的重量减少率测定热固化后的吸水率。
(重量减少量的测定)
对得到的芯片接合薄膜A～D，从使用干燥机在210℃下放置1小时前后的重量减少量测定热固化后的重量减少量。
(拉伸储存弹性模量)
对得到的芯片接合薄膜A～D，使用粘弹性测定装置(RheometicScientific公司制，Solid Analyzer RSII)在升温速度10℃/分钟、频率1MHz下测定热固化后的拉伸储存弹性模量。
(结果)
从下表1可知，表面自由能为37mJ/m2以上、40mJ/m2以下时，确认拾取工序中不产生错误，各实施例的芯片接合薄膜的拾取性优良，并且封装后的空隙面积也为1体积％以下。另一方面可知，像比较例1的芯片接合薄膜那样，当表面自由能为41J/m2时，拾取成功率降低，对粘合剂层的剥离性低。另外可知，像比较例2的芯片接合薄膜那样，当表面自由能为36J/m2时，空隙面积为8.9体积％，制造的半导体装置的可靠性可能降低。
[表1]
Figure G2008800056620D00271
Figure G2008800056620D00281

Claims (8)

1.一种热固化型芯片接合薄膜，在制造半导体装置时使用，其特征在于，
含有15～30重量％热塑性树脂成分及60～70重量％热固性树脂成分作为主成分，并且
热固化前的表面自由能为37mJ/m2以上且小于40mJ/m2。
2.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述芯片接合薄膜热固化后在250℃下的拉伸储存弹性模量为10MPa以上。
3.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述芯片接合薄膜热固化后的玻璃化转变温度为175℃以上。
4.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述利用加热进行的热固化后，在85℃、85％RH的环境中放置168小时后的吸水率为1重量％以下。
5.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述利用加热进行的热固化后，在250℃加热1小时后的重量减少量为1重量％以下。
6.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述热塑性树脂成分为丙烯酸树脂成分。
7.权利要求1所述的热固化型芯片接合薄膜，其特征在于，所述热固性树脂成分为环氧树脂成分或酚树脂成分中的至少任意一种。
8.一种切割/芯片接合薄膜，其特征在于，权利要求1所述的热固化型芯片接合薄膜层压在粘合薄膜上。
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US7829441B2 (en) 2010-11-09
TW200846437A (en) 2008-12-01
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