JP2008244463A - 熱硬化型ダイボンドフィルム - Google Patents
熱硬化型ダイボンドフィルム Download PDFInfo
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- JP2008244463A JP2008244463A JP2008044520A JP2008044520A JP2008244463A JP 2008244463 A JP2008244463 A JP 2008244463A JP 2008044520 A JP2008044520 A JP 2008044520A JP 2008044520 A JP2008044520 A JP 2008044520A JP 2008244463 A JP2008244463 A JP 2008244463A
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- die
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- thermosetting
- die bond
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
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Abstract
【解決手段】 本発明の熱硬化型ダイボンドフィルムは、半導体装置の製造の際に用いる熱硬化型ダイボンドフィルムであって、有機樹脂成分に対し熱可塑性樹脂成分15〜30重量%及び熱硬化性樹脂成分60〜70重量%を主成分として含有し、熱硬化前の表面自由エネルギーが37mJ/m2以上40mJ/m2未満であることを特徴とする。
【選択図】 図1
Description
即ち、本発明によれば、有機樹脂成分に対し熱可塑性樹脂成分15〜30重量%及び熱硬化性樹脂成分60〜70重量%を主成分として含有し、熱硬化前の表面自由エネルギーを37mJ/m2以上40mJ/m2未満にすることにより、被着体に対する密着性を向上させてボイドの発生を防止すると共に、ピックアップ工程の際のピックアップ性を良好なものにする。その結果、信頼性の高い半導体装置を歩留まり良く製造すること可能になる。
本発明の熱硬化型ダイボンドフィルム(以下、「ダイボンドフィルム」と言う)について、ダイシングフィルム(粘着フィルム)と一体的に積層されたダイシング・ダイボンドフィルムを例にして以下に説明する。図1は、本実施の形態に係るダイシング・ダイボンドフィルムを示す断面模式図である。図2は、本実施の形態に係る他のダイシング・ダイボンドフィルムを示す断面模式図である。
本発明のダイシング・ダイボンドフィルム10、12は、ダイボンドフィルム3、3’上に任意に設けられたセパレータを適宜に剥離して、次の様に使用される。以下では、図を参照しながらダイシング・ダイボンドフィルム10を用いた場合を例にして説明する。
前記基板等上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)144部、エポキシ樹脂2(JER(株)製、エピコート827)130部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)293部、球状シリカ(アドマテックス(株)製、SO−25R)444部、硬化触媒(四国化成(株)製、C11−Z)2部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製,パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)126部、エポキシ樹脂2(JER(株)製、エピコート827)68部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)206部、球状シリカ(アドマテックス(株)製、SO−25R)333部、硬化触媒(四国化成(株)製、C11−Z)1.5部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製,パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)228部、エポキシ樹脂2(JER(株)製、エピコート827)206部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)465部、球状シリカ(アドマテックス(株)製、SO−25R)667部、硬化触媒(四国化成(株)製、C11−Z)1部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製した。
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製,パラクロンW−197CM)100部に対して、エポキシ樹脂1(JER(株)製、エピコート1004)88部、エポキシ樹脂2(JER(株)製、エピコート827)26部、フェノール樹脂(三井化学(株)製、ミレックスXLC−4L)119部、球状シリカ(アドマテックス(株)製、SO−25R)222部、硬化触媒(四国化成(株)製、C11−Z)2部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製した。
各実施例及び比較例で得られたダイボンドフィルムA〜Dについて、その熱硬化前の表面自由エネルギーを算出した。即ち、水及びヨードメタンの接触角を接触角計を用いて測定し、それらの接触角から幾何平均法により、表面自由エネルギー値を算出した。結果を表1に示す。
各実施例及び比較例で得られたダイボンドフィルムA〜Dを、8inchのシリコンミラーウエハ(75μm厚み)に貼り付けた。更に、ダイボンドフィルムに対し、40℃でダイシングテープ(日東電工(株)社製V−8−T)を貼り付けると共に、ダイシングリングもその内側にシリコンミラーウェハが位置する様に貼り付けた。
各実施例及び比較例で得られたダイボンドフィルムA〜Dを、それぞれ40℃で半導体素子に貼り付け、160℃、500gf、2sでBGA基板にマウントした。次いで、175℃で、1時間加熱硬化を行い、封止樹脂(日東電工(株)社製、GE−100)でパッケージングし、半導体装置を製造した(TFBGAパッケージ16x16x0.7mm、チップサイズ5×5mm)。
得られたダイボンドフィルムA〜Dについて熱硬化後のガラス転移点を、粘弾性測定装置(Rheometic Scientific社製、Solid Analyzer RSII)を用いて昇温速度10℃/分、周波数1MHzに於けるTan(E”(損失弾性率)/E’(貯蔵弾性率))から測定した。
得られたダイボンドフィルムA〜Dについて熱硬化後の吸水率を、85℃、85%RHの恒温恒湿槽に168時間放置した前後の重量減少率から測定した。
得られたダイボンドフィルムA〜Dについて熱硬化後の重量減少量を、乾燥機を用いて210℃で1時間放置した前後の重量減少量から測定した。
得られたダイボンドフィルムA〜Dについて熱硬化後の引張貯蔵弾性率を、粘弾性測定装置(Rheometic Scientific社製、Solid Analyzer RSII)を用いて昇温速度10℃/分、周波数1MHzに於いて測定した。
下記表1から分かる通り、表面自由エネルギーが37mJ/m2以上40mJ/m2以下であると、ピックアップ工程に於いてエラーが生じず、各実施例のダイボンドフィルムのピックアップ性に優れると共に、パッケージ後のボイド面積も1vol%以下となることが確認された。その一方、比較例1のダイボンドフィルムの様に、表面自由エネルギーが41mJ/m2であるとピックアップの成功率が低下しており、粘着剤層に対する剥離性が低いことが分かった。また、比較例2のダイボンドフィルムの様に、表面自由エネルギーが36mJ/m2であると、ボイド面積も8.9vol%となり、製造される半導体装置の信頼性が低下する恐れがあることが分かった。
5 半導体チップ(半導体素子)
6 基板等(被着体)
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
10、11 ダイシング・ダイボンドフィルム
13 ダイボンドフィルム(熱硬化型ダイボンドフィルム)
15 半導体チップ(半導体素子)
21 ダイボンドフィルム(熱硬化型ダイボンドフィルム)
Claims (6)
- 半導体装置の製造の際に用いる熱硬化型ダイボンドフィルムであって、
有機樹脂成分に対し熱可塑性樹脂成分15〜30重量%及び熱硬化性樹脂成分60〜70重量%を主成分として含有し、
熱硬化前の表面自由エネルギーが37mJ/m2以上40mJ/m2未満であることを特徴とする熱硬化型ダイボンドフィルム。 - 前記ダイボンドフィルムの熱硬化後の250℃での引張貯蔵弾性率が10MPa以上であることを特徴とする請求項1記載の熱硬化型ダイボンドフィルム。
- 前記ダイボンドフィルムの熱硬化後のガラス転移点が175℃以上であることを特徴とする請求項1又は2記載の熱硬化型ダイボンドフィルム。
- 前記加熱による熱硬化後の、85℃、85%RHの雰囲気下で168時間放置したときの吸水率が1重量%以下であることを特徴とする請求項1記載の熱硬化型ダイボンドフィルム。
- 前記加熱による熱硬化後の、250℃、1時間加熱後の重量減少量が1重量%以下であることを特徴とする請求項1記載の熱硬化型ダイボンドフィルム。
- 請求項1〜5の何れか1項に記載の熱硬化型ダイボンドフィルムが、粘着フィルム上に積層されていることを特徴とするダイシング・ダイボンドフィルム。
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KR20160004270A (ko) * | 2013-04-30 | 2016-01-12 | 닛토덴코 가부시키가이샤 | 필름형 접착제, 다이싱 테이프 일체형 필름형 접착제 및 반도체 장치의 제조 방법 |
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KR20190118566A (ko) * | 2017-02-28 | 2019-10-18 | 린텍 가부시키가이샤 | 점착 시트 |
KR102661574B1 (ko) | 2017-02-28 | 2024-04-26 | 린텍 가부시키가이샤 | 점착 시트 |
JP7438741B2 (ja) | 2019-12-13 | 2024-02-27 | 日東電工株式会社 | 半導体プロセスシート |
KR20210078416A (ko) | 2019-12-18 | 2021-06-28 | 닛토덴코 가부시키가이샤 | 다이 본드 시트 및 다이싱 다이 본드 필름 |
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US7829441B2 (en) | 2010-11-09 |
KR20090107557A (ko) | 2009-10-13 |
CN101617395A (zh) | 2009-12-30 |
TWI372173B (en) | 2012-09-11 |
TW200846437A (en) | 2008-12-01 |
WO2008108131A1 (ja) | 2008-09-12 |
US20100081258A1 (en) | 2010-04-01 |
JP5305501B2 (ja) | 2013-10-02 |
KR101140512B1 (ko) | 2012-04-30 |
CN101617395B (zh) | 2011-08-17 |
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