JP5398083B2 - ダイボンドフィルム及びその用途 - Google Patents
ダイボンドフィルム及びその用途 Download PDFInfo
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- JP5398083B2 JP5398083B2 JP2011054276A JP2011054276A JP5398083B2 JP 5398083 B2 JP5398083 B2 JP 5398083B2 JP 2011054276 A JP2011054276 A JP 2011054276A JP 2011054276 A JP2011054276 A JP 2011054276A JP 5398083 B2 JP5398083 B2 JP 5398083B2
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- Prior art keywords
- die
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- film
- die bond
- dicing
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
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- C—CHEMISTRY; METALLURGY
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Description
前記半導体ウェハを前記ダイシング・ダイボンドフィルムと共にダイシングして、チップ状の半導体素子を形成するダイシング工程と、
前記半導体素子を、前記ダイシング・ダイボンドフィルムから前記ダイボンドフィルムと共にピックアップするピックアップ工程と、
前記ダイボンドフィルムを介して、前記半導体素子を被着体上にダイボンドするダイボンド工程と、
前記半導体素子にワイヤーボンディングをするワイヤーボンディング工程と
を有する。
本発明のダイボンドフィルム3は、重量平均分子量が50万以上のグリシジル基含有アクリル共重合体(a)と、フェノール樹脂(b)とを含有し、前記共重合体(a)の含有量xのフェノール樹脂(b)の含有量yに対する重量比(x/y)が5以上30以下であり、かつ重量平均分子量が5000以下のエポキシ樹脂を実質的に含まない。
共重合体(a)は、重量平均分子量が50万以上であって、グリシジル基を有するアクリル共重合体であれば特に限定されない。共重合体(a)へのグリシジル基の導入方法は特に限定されず、グリシジル基含有モノマーと他のモノマー成分との共重合により導入してもよく、アクリル系モノマーの共重合体を調製した後にこの共重合体とグリシジル基を有する化合物とを反応させて導入してもよい。共重合体(a)の調製の容易性等を考慮すると、グリシジル基含有モノマーと他のモノマーとの共重合による導入が好ましい。グリシジル基含有モノマーとしては、グリシジル基を有し、かつ共重合可能なエチレン性不飽和結合を有するモノマーを好適に用いることができ、例えばグリシジルアクリレートやグリシジルメタクリレート等が挙げられる。共重合体(a)におけるグリシジル基含有モノマーの含有量としては、目的とする共重合体(a)のガラス転移点やエポキシ価を考慮して決めればよく、通常1〜20mol%であり、1〜15mol%が好ましく、1〜10mol%がより好ましい。
前記フェノール樹脂は、前記共重合体(a)の硬化剤として作用するものであり、例えば、フェノールノボラック樹脂、フェノールビフェニル樹脂、フェノールアラルキル樹脂、クレゾールノボラック樹脂、tert−ブチルフェノールノボラック樹脂、ノニルフェノールノボラック樹脂等のノボラック型フェノール樹脂、レゾール型フェノール樹脂、ポリパラオキシスチレン等のポリオキシスチレン等が挙げられる。これらは単独で、又は2種以上を併用して用いることができる。これらのフェノール樹脂のうち、下記化学式で表されるビフェニル型フェノールノボラック樹脂や、フェノールアラルキル樹脂が好ましい。半導体装置の接続信頼性を向上させることができるからである。
ダイシング・ダイボンドフィルム10、11を構成するダイシングフィルムは、基材1上に粘着剤層2が積層された構造である。以下、基材及び粘着剤層の順で説明する。
前記基材1はダイシング・ダイボンドフィルム10、11の強度母体となるものである。基材1の構成材料としては、例えば、低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン−酢酸ビニル共重合体、アイオノマー樹脂、エチレン−(メタ)アクリル酸共重合体、エチレン−(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン−ブテン共重合体、エチレン−ヘキセン共重合体、ポリウレタン、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリカーボネート、ポリイミド、ポリエーテルエーテルケトン、ポリイミド、ポリエーテルイミド、ポリアミド、全芳香族ポリアミド、ポリフェニルスルフイド、アラミド(紙)、ガラス、ガラスクロス、フッ素樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、セルロース系樹脂、シリコーン樹脂、金属(箔)、紙等が挙げられる。粘着剤層2が紫外線硬化型である場合、基材1は紫外線に対し透過性を有するものが好ましい。
前記粘着剤層2は紫外線硬化型粘着剤を含み構成されている。紫外線硬化型粘着剤は、紫外線の照射により架橋度を増大させてその粘着力を容易に低下させることができ、図1に示す粘着剤層2の半導体ウェハ貼り付け部分に対応する部分2aのみを紫外線照射することにより他の部分2bとの粘着力の差を設けることができる。
本実施の形態に係るダイシング・ダイボンドフィルム10、11は、例えばダイシングフィルム及びダイボンドフィルムを別々に作製しておき、最後にこれらを貼り合わせることにより作成することができる。具体的には、以下のような手順に従って作製することができる。
次に、本実施の形態に係るダイシング・ダイボンドフィルム10を用いた半導体装置の製造方法について、以下に説明する。
前記被着体上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.18、ガラス転移点(Tg)30℃、重量平均分子量110万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート1.9mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)17.5部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.22、ガラス転移点(Tg)15℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート2.3mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)12.5部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)40部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.42、ガラス転移点(Tg)15℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート4.5mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)6.5部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)40部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.62、ガラス転移点(Tg)0℃、重量平均分子量60万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート6.4mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)4.1部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)50部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.62、ガラス転移点(Tg)20℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート6.4mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)17.5部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)10部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.18、ガラス転移点(Tg)0℃、重量平均分子量100万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート1.9mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)4.1部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)20部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.18、ガラス転移点(Tg)30℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート1.9mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)10部、重量平均分子量が1000のエポキシ樹脂(DIC(株)製、「HP−7200H」)7.5部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.42、ガラス転移点(Tg)15℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート4.5mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)3.3部、重量平均分子量が1000のエポキシ樹脂(DIC(株)製、「HP−7200H」)3.2部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)40部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.18、ガラス転移点(Tg)30℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート1.9mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)25部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.1、ガラス転移点(Tg)15℃、重量平均分子量40万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート0.19mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)12.5部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)40部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
グリシジル基含有アクリル共重合体(a)としてアクリロニトリル−エチルアクリレート−ブチルアクリレートを主成分とするエポキシ価0.18、ガラス転移点(Tg)15℃、重量平均分子量80万のアクリル酸エステル系ポリマー(根上工業社製、グリシジルアクリレート0.19mol%)100部、フェノール樹脂(b)としてフェノール樹脂(明和化成(株)製、「MEH7851」)2.9部をメチルエチルケトンに溶解させ、さらに平均粒径500nmの球状シリカ(アドマテックス(株)製、「SO−25R」)40部を分散させて、濃度23.6重量%の接着剤組成物を調製したこと以外は、実施例1と同様にダイボンドフィルムを作製した。
実施例及び比較例でそれぞれ用いたポリマー及び樹脂について、ゲルパーミエーションクロマトグラフィーにより重量平均分子量を測定した。ゲルパーミエーションクロマトグラフィーは、TSK G2000H HR、G3000H HR、G4000H HR、及びGMH−H HRの4本のカラム(いずれも東ソー株式会社製)を直列に接続して使用し、溶雛液にテトラヒドロフランを用いて、流速1ml/分、温度40℃、サンプル濃度0.1重量%テトラヒドロフラン溶液、サンプル注入量500μlの条件で行い、検出器には示差屈折計を用いた。
エポキシ価は、JIS K 7236に準じて算出した。詳細には、共重合体(a)4gを100mlのコニカルフラスコに秤量し、これにクロロホルム10mlを加えて溶解した。さらに酢酸30ml、テトラエチルアンモニウムブロマイド5ml及びクリスタルバイオレット指示薬5滴を加え、マグネチックスターラーで攪拌しながら、0.1mol/Lの過塩素酸酢酸規定液で滴定した。同様の方法でブランクテストを行い、下記式によりエポキシ価を算出した。
エポキシ価=[(V−B)×0.1×F]/W
W:秤量した試料のg数
B:ブランクテストに要した0.1mol/L過塩素酸酢酸規定液のml数
V:試料の滴定に要した0.1mol/L過塩素酸酢酸規定液のml数
F:0.1mol/L過塩素酸酢酸規定液のファクター
各実施例及び比較例のダイボンドフィルムから、長さ22.5mm(測定長さ)×幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、−50〜300℃における貯蔵弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。50℃(ダイボンドフィルム硬化前)、150℃(共重合体(a)について)、175℃(ダイボンドフィルム硬化後)、260℃(ダイボンドフィルム硬化後)における貯蔵弾性率の値を下記表1に示す。なお、共重合体(a)の貯蔵弾性率については、共重合体(a)を含む溶液を、シリコーン離型処理した厚さが50μmのポリエチレンテレフタレートフィルムからなる剥離ライナーとしての離型処理フィルム上に塗布した後、130℃で2分間乾燥させてフィルムサンプルを作製した上で同様に測定した。また、硬化後の貯蔵弾性率については乾燥機にて所定条件での硬化処理を行った後に同様の手順で測定した。
各実施例及び比較例に係るダイボンドフィルムのガラス転移点は、先ず、前記貯蔵弾性率の場合と同様にして貯蔵弾性率を測定した。更に、損失弾性率も測定した後、tanδ(E”(損失弾性率)/E’(貯蔵弾性率))の値を算出することにより、ガラス転移温度を求めた。
前記実施例及び比較例において作製したダイボンドフィルムについて、半導体素子に対する剪断接着力を以下の通り測定した。
ウェハとしてシリコンウェハを熱板の上に置き、粘着テープ(商品名「BT315」日東電工株式会社製)により裏面補強した長さ150mm、幅10mm、厚さ25μmのダイボンドフィルムを50℃にて2kgのローラーを一往復させることによりシリコンウェハに貼り合わせた。その後、50℃の熱板上に2分間静置した後、常温(23℃程度)で20分間静置した。次いで、剥離試験機(商品名「オートグラフAGS−J」、島津製作所社製)を用いて、温度:23℃、剥離角度:180°、引張速度:300mm/minの条件で、裏面補強されたダイボンドフィルムを引き剥がした(ダイボンドフィルムとシリコンウェハとの界面で剥離させた)。引き剥がした際の最大荷重(測定初期のピークトップを除いた荷重の最大値)を測定し、この最大荷重をダイボンドフィルムとシリコンウェハとの間の接着力(N/10mm幅)として求めた。接着力が1N/10mm以上の場合は「○」、1N/10mm未満の場合は「×」として評価した。
各実施例及び比較例で得られたダイボンドフィルムをアルミ蒸着半導体素子(長さ5mm×幅5mm×厚さ0.5mm)にラミネーターを用いて、温度50℃、速度10mm/sec、圧力0.15MPaで貼り付け、これをさらに、温度120℃、圧力0.1MPa、時間1sの条件でBGA基板にマウントした。次いで、ワイヤーボンダー((株)新川、商品名「UTC−1000」)を用いて以下の条件にて9個の半導体素子に対しワイヤーボンディングを行い、1箇所も発生しなかった場合を「○」、不着や素子割れが1箇所以上発生した場合を「×」として評価した。
Temp.:175℃
Au−wire:23μm
S−LEVEL:50μm
S−SPEED:10mm/s
TIME:15ms
US−POWER:100
FORCE:20gf
S−FORCE:15gf
ワイヤーピッチ:100μm
各実施例及び比較例で得られたダイボンドフィルムを40℃で5mm角の半導体素子に貼り付け、温度120℃、圧力0.1MPa、時間1sの条件でBGA基板にマウントした。これをさらに乾燥機にて150℃で1時間熱処理し、次いで、モールドマシン(TOWAプレス社製、マニュアルプレスY−1)を用いて、成形温度175℃、クランプ圧力184kN、トランスファー圧力5kN、時間120秒、封止樹脂GE−100(日東電工(株)製)の条件下で封止工程を行った。その後、半導体素子の断面をSEMにて9箇所観察し、ダイボンドフィルムと基板との間に封止樹脂が進入しているか否かを確認した。封止樹脂が進入していない場合を「○」、1箇所でも進入していれば「×」として評価した。
各実施例及び比較例で得られたダイボンドフィルムを40℃で5mm角の半導体素子に貼り付け、温度120℃、圧力0.1MPa、時間1sの条件でBGA基板にマウントした。これをさらに乾燥機にて150℃で1時間熱処理し、その後、120℃で10時間、又は175℃で2時間の熱処理を施した。次いで、モールドマシン(TOWAプレス社製、マニュアルプレスY−1)を用いて、成形温度175℃、クランプ圧力184kN、トランスファー圧力5kN、時間120秒、封止樹脂GE−100(日東電工(株)製)の条件下で封止工程を行った。封止工程後のボイドを超音波映像装置(日立ファインテック社製、FS200II)を用いて観察した。観察画像においてボイドが占める面積を二値化ソフト(WinRoof ver.5.6)を用いて算出した。ボイドの占める面積がダイボンドフィルムの表面積に対して30%未満であった場合を「○」、30%以上であった場合を「×」として評価した。
各実施例及び比較例で得られたダイボンドフィルムを40℃で5mm角の半導体素子に貼り付け、温度120℃、圧力0.1MPa、時間1sの条件でBGA基板にマウントした。これをさらに乾燥機にて150℃で1時間熱処理した後、120℃で10時間、又は175℃で2時間の熱処理を施した。次いで、モールドマシン(TOWAプレス社製、マニュアルプレスY−1)を用いて、成形温度175℃、クランプ圧力184kN、トランスファー圧力5kN、時間120秒、封止樹脂GE−100(日東電工(株)製)の条件下で封止工程を行った。その後、温度85℃、湿度60%RH、時間168hの条件で吸湿操作を行い、260℃以上の温度を30秒間保持するように温度設定したIRリフロー炉にサンプルを通した。9個の半導体素子について、ダイボンドフィルムと基板との界面に剥離が発生しているか否かを超音波顕微鏡で観察し、剥離が生じている割合を算出した。
各評価結果を表1及び2に示す。
以上の結果から、実施例に係るダイボンドフィルムによると、ワイヤーボンディング工程及び封止工程を含む全ての工程において作業性が良好で、ダイボンド後に高温で長時間熱処理を行った場合でも、以降の工程である封止樹脂による封止工程後にダイボンドフィルムと被着体との境界の気泡(ボイド)を消失させることができ、また、硬化後に十分な貯蔵弾性率が得られ耐湿半田リフロー試験においても高信頼性を確保することができることが確認された。
2 粘着剤層
3、3’、13、21 ダイボンドフィルム
4 半導体ウェハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
10、11 ダイシング・ダイボンドフィルム
15 半導体チップ
Claims (8)
- 重量平均分子量が50万以上のグリシジル基含有アクリル共重合体(a)と、フェノール樹脂(b)とを含有し、
グリシジル基含有アクリル共重合体(a)の含有量xのフェノール樹脂(b)の含有量yに対する重量比(x/y)が5以上30以下であり、
前記グリシジル基含有アクリル共重合体(a)のエポキシ価が0.15e.q./kg以上0.65e.q./kg以下であり、かつ
重量平均分子量が5000以下のエポキシ樹脂を実質的に含まないダイボンドフィルム。 - 前記グリシジル基含有アクリル共重合体(a)について、
ガラス転移点が−15℃以上40℃以下であり、かつ
150℃での貯蔵弾性率が0.1MPa以上である請求項1に記載のダイボンドフィルム。 - 硬化前の50℃での貯蔵弾性率が10MPa以下であり、
175℃での貯蔵弾性率が0.1MPa以上であり、かつ
150℃で1時間硬化させた後の175℃での貯蔵弾性率が0.5MPa以上である請求項1又は2に記載のダイボンドフィルム。 - 175℃で1時間硬化させた後の260℃での貯蔵弾性率が0.5MPa以上である請求項1〜3のいずれか1項に記載のダイボンドフィルム。
- 被着体と貼り合わせて150℃で1時間硬化させた後の175℃での前記被着体との間の剪断接着力が0.3MPa以上である請求項1〜4のいずれか1項に記載のダイボンドフィルム。
- 染料を0.05重量%以上含有する請求項1〜5のいずれか1項に記載のダイボンドフィルム。
- ダイシングテープと、このダイシングテープ上に積層された請求項1〜6のいずれか1項に記載のダイボンドフィルムとを備えるダイシング・ダイボンドフィルム。
- 請求項7に記載のダイシング・ダイボンドフィルムのダイボンドフィルムと、半導体ウェハの裏面とを貼り合わせる貼り合わせ工程と、
前記半導体ウェハを前記ダイシング・ダイボンドフィルムと共にダイシングして、チップ状の半導体素子を形成するダイシング工程と、
前記半導体素子を、前記ダイシング・ダイボンドフィルムから前記ダイボンドフィルムと共にピックアップするピックアップ工程と、
前記ダイボンドフィルムを介して、前記半導体素子を被着体上にダイボンドするダイボンド工程と、
前記半導体素子にワイヤーボンディングをするワイヤーボンディング工程と
を有する半導体装置の製造方法。
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US10008405B2 (en) | 2012-12-26 | 2018-06-26 | Hitachi Chemical Company, Ltd | Expansion method, method for manufacturing semiconductor device, and semiconductor device |
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JP6310748B2 (ja) * | 2014-03-31 | 2018-04-11 | 日東電工株式会社 | ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法 |
JP6073263B2 (ja) * | 2014-03-31 | 2017-02-01 | 日東電工株式会社 | ダイシングシート付きダイボンドフィルム、及び、半導体装置の製造方法 |
KR101991165B1 (ko) | 2014-08-29 | 2019-06-19 | 후루카와 덴키 고교 가부시키가이샤 | 말레이미드 필름 |
JP6523042B2 (ja) * | 2015-05-26 | 2019-05-29 | 日東電工株式会社 | 接着シート、ダイシングテープ一体型接着シート、フィルム、半導体装置の製造方法および半導体装置 |
SG11201808374TA (en) * | 2016-03-30 | 2018-10-30 | Mitsui Chemicals Tohcello Inc | Method for manufacturing semiconductor device |
US10229859B2 (en) * | 2016-08-17 | 2019-03-12 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and a method of manufacturing the same |
JP7017334B2 (ja) * | 2017-04-17 | 2022-02-08 | 日東電工株式会社 | ダイシングダイボンドフィルム |
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