JP2007220913A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007220913A JP2007220913A JP2006039681A JP2006039681A JP2007220913A JP 2007220913 A JP2007220913 A JP 2007220913A JP 2006039681 A JP2006039681 A JP 2006039681A JP 2006039681 A JP2006039681 A JP 2006039681A JP 2007220913 A JP2007220913 A JP 2007220913A
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Abstract
【解決手段】 スペーサ用接着シートを用いた半導体装置の製造方法であって、前記スペーサ用接着シートとして、少なくとも一方の面に接着剤層を備えたスペーサ層を有するものを用意し、前記スペーサ用接着シートをダイシングして、接着剤層を備えたチップ状のスペーサを形成する工程と、前記スペーサを、前記接着剤層を介して被着体に固定する工程とを有することを特徴とする。
【選択図】 図1
Description
即ち、本発明によれば、従来行っていた半導体ウェハのダイシングによる半導体チップの形成、該半導体チップのピックアップ、半導体チップの被着体へのダイボンドと同様の方法により、チップ状のスペーサを被着体上に実装することが可能になるので、スペーサを被着体上に固定する為の新規な装置が不要になり、製造設備のコスト高を抑制して半導体装置を製造することが可能になる。
本発明の実施の形態について、図を参照しながら説明する。図1は、本実施の形態に係るスペーサ用接着シート(以下、単に「接着シート」と言う)を用いて、チップ状のスペーサを作製する工程を示す断面模式図である。
本実施の形態2に係る半導体装置の製造方法について、図4及び図5を参照しながら説明する。図4は、本実施の形態に於いて使用する接着シートのダイシング工程を説明する為の工程図である。図5は、本実施の形態に係る半導体装置の製造方法により得られた半導体装置の概略を示す断面図である。
前記被着体上に半導体チップを3次元実装する場合、半導体チップの回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
[金属箔付き接着シートの作製]
アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、商品名;パラクロンW−197CM)100部に対して、多官能イソシアネート系架橋剤3部、エポキシ樹脂(ジャパンエポキシレジン(株)製、商品名;エピコート1004)23部、フェノール樹脂(三井化学(株)製、商品名;ミレックスXLC−LL)6部となる様にこれらをメチルエチルケトンに溶解させ、濃度20重量%の接着剤組成物の溶液を調製した。
アクリル酸ブチル70部、アクリル酸エチル30部及びアクリル酸5部を酢酸エチル中で常法により共重合させて、重量平均分子量80万、濃度30重量%のアクリル系ポリマーの溶液を得た。当該アクリル系ポリマーの溶液に、光重合性化合物としてのジペンタエリスリトールモノヒドロキシペンタアクリレート20部及び光重合開始剤としてのα−ヒドロキシシクロヘキシルフェニルケトン1部を配合した。これらをトルエンに均一に溶解して、濃度25重量%の放射線硬化型アクリル系粘着剤の溶液を作製した。
厚さが60μmのポリエチレンフィルムからなる支持基材上に、前記放射線硬化型アクリル系粘着剤の溶液を塗布した。更に、120℃で3分間乾燥して、厚さが20μmの粘着剤層を形成した。以下、これを粘着フィルムという。次いで、粘着フィルムの粘着剤層上に金属箔付き接着シートを貼り付ける部分にのみ紫外線を500ml/cm2(紫外線照射積算光量)を照射し、金属箔付き接着シートの貼り付け対応部分が放射線硬化された粘着剤層を有するフィルムを得た。尚、紫外線照射には、日東精機(株)製の紫外線(UV)照射装置(商品名;NELUM−110)を用いた。
本実施例2に於いては、前記実施例1で使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、パラクロンSN−710)を用いたこと以外は、前記実施例1と同様にして、本実施例2に係る金属箔付き接着シート(接着剤層の厚さ25μm、金属箔付き接着シートの厚さ75μm)を作製し、本実施例2に係るスペーサ用接着シートを作製した。
本実施例3に於いては、前記実施例1で使用した圧延鋼箔に替えて、ステンレス鋼箔を用いたこと以外は、前記実施例1と同様にして、本実施例3に係る金属箔付き接着シート(接着剤層の厚さ25μm、金属箔付き接着シートの厚さ75μm)を作製し、本実施例3に係るスペーサ用接着シートを作製した。
本実施例4に於いては、前記実施例3で使用したステンレス鋼箔の厚みを50μmから25μmに変更し、金属箔付き接着シートの厚さ50μmにしたこと以外は、前記実施例3と同様にして、本実施例4に係るスペーサ用接着シートを作製した。
本比較例1に於いては、前記実施例1で使用した圧延鋼箔に替えて剥離シートを用いたこと以外は、前記実施例1と同様にして、本比較例1に係るスペーサ用接着シートを作製した。
本比較例2に於いては、前記実施例2で使用したアクリル酸エステル系ポリマーに替えて、ブチルアクリレートを主成分としたポリマー(根上工業(株)製、ハフクロンSN−710)を用いた。更に、前記比較例1と同様にして、本比較例2に係るスペーサ用接着シートを作製した。
前記実施例1〜4及び比較例1、2に於いて作製した各スペーサ用接着シートのダイシングは、ディスコ社製ダイサーDFD651を用いて行った。このとき、ダイシングは10mm×10mmの大きさのチップ状のスペーサが得られるように行った。ダイシングの際、特にチッピング等の問題もなく全てのサンプルについてダイシングを行うことができた。ダイシング条件は、下記の通りとした。
ダイシング装置:ディスコ社製ダイサーDFD651
ダイシング速度:50mm/sec
ダイシングブレード:ディスコ社製 205O−SE27HECC
ダイシングブレード回転数:40000rpm
接着シート切り込み深さ:85μm
チップ状スペーサのサイズ:10mm×10mm
前記ダイシング後のスペーサ用接着シートについてピックアップを行い、20個のチップ状のスペーサを作製した。ピックアップには、半導体チップのピックアップの際に使用する(株)新川製のダイボンダーSPA300を用いた。また、ピックアップ条件は、下記の通りとした。更に、本工程では、ピックアップの成功率も算出した。その結果を、下記表1に示す。
ピックアップ装置:(株)新川製のダイボンダーSPA300
ニードル数:5〜9本
突き上げ量:300μm
突き上げ速度:80mm/秒
引き落とし量:3mm
引き落とし後の加熱:なし
下記表1に示す様に、実施例1〜4に係るスペーサ用接着シートに於いては何れもピックアップの成功率が100%であるのに対し、比較例1、2に係るスペーサ用接着シートに於いては何れもピックアップの成功率が0%であった。このことから、比較例1、2のスペーサ用接着シートでは、従来のピックアップ装置によるピックアップが不可能であるのに対し、実施例1〜4のスペーサ用接着シートでは、それらに適した新規なピックアップ装置を要することなく、従来のピックアップ装置でも歩留まり良くピックアップを行えることが確認できた。
2 粘着剤層
3 接着剤層
4 スペーサ層
5 接着剤層
10〜12 接着シート
14、15 スペーサ
16 ボンディングワイヤー
21 ダイボンド層
22 半導体ウェハ
23 半導体チップ
31 支持基材
32 粘着剤層
33 ダイシングテープ
34 被着体
Claims (9)
- スペーサ用接着シートを用いた半導体装置の製造方法であって、
前記スペーサ用接着シートとして、少なくとも一方の面に接着剤層を備えたスペーサ層を有するものを用意し、
前記スペーサ用接着シートを、前記接着剤層を貼り合わせ面としてダイシングシートに貼り合わせる工程と、
前記スペーサ用接着シートをダイシングして、前記接着剤層を備えたチップ状のスペーサを形成する工程と、
前記スペーサを前記接着剤層と共に前記ダイシングシートから剥離する工程と、
前記スペーサを、前記接着剤層を介して被着体に固定する工程とを有することを特徴とする半導体装置の製造方法。 - スペーサ用接着シートを用いた半導体装置の製造方法であって、
前記スペーサ用接着シートとして、基材上に粘着剤層、接着剤層及びスペーサ層が順次積層されたものを用意し、
前記スペーサ用接着シートをダイシングして、前記接着剤層を備えたチップ状のスペーサを形成する工程と、
前記スペーサを前記接着剤層と共に前記粘着剤層から剥離する工程と、
前記スペーサを、前記接着剤層を介して被着体に固定する工程とを有することを特徴とする半導体装置の製造方法。 - 前記請求項1又は2に記載の半導体装置の製造方法であって、
前記スペーサ用接着シートとして、前記スペーサ層が金属層のものを使用することを特徴とする半導体装置の製造方法。 - 前記請求項1〜3の何れか1項に記載の半導体装置の製造方法であって、
前記被着体が、基板、リードフレーム又は他の半導体素子であることを特徴とする半導体装置の製造方法。 - 前記請求項1〜4の何れか1項に記載の半導体装置の製造方法であって、
前記接着剤層が、熱可塑性樹脂を含み構成されるものであることを特徴とする半導体装置の製造方法。 - 前記請求項1〜4の何れか1項に記載の半導体装置の製造方法であって、
前記接着剤層が、熱硬化性樹脂及び熱可塑性樹脂を含み構成されるものであることを特徴とする半導体装置の製造方法。 - 前記請求項5又は6に記載の半導体装置の製造方法であって、
前記熱可塑性樹脂として、アクリル樹脂を使用することを特徴とする半導体装置の製造方法。 - 前記請求項1〜7の何れか1項に記載の半導体装置の製造方法に於いて使用されるスペーサ用接着シート。
- 前記請求項1〜7の何れか1項に記載の半導体装置の製造方法により得られたものであることを特徴とする半導体装置。
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JP2006039681A JP4954569B2 (ja) | 2006-02-16 | 2006-02-16 | 半導体装置の製造方法 |
TW096105470A TWI396243B (zh) | 2006-02-16 | 2007-02-14 | 半導體裝置的製造方法 |
KR1020107004295A KR20100028133A (ko) | 2006-02-16 | 2007-02-15 | 반도체 장치의 제조 방법 |
KR1020087022345A KR20080095283A (ko) | 2006-02-16 | 2007-02-15 | 반도체 장치의 제조 방법 |
PCT/JP2007/052750 WO2007094418A1 (ja) | 2006-02-16 | 2007-02-15 | 半導体装置の製造方法 |
CN2007800058227A CN101385135B (zh) | 2006-02-16 | 2007-02-15 | 半导体装置的制造方法 |
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CN101385135A (zh) | 2009-03-11 |
US20100219507A1 (en) | 2010-09-02 |
TW200735238A (en) | 2007-09-16 |
JP4954569B2 (ja) | 2012-06-20 |
TWI396243B (zh) | 2013-05-11 |
KR20100028133A (ko) | 2010-03-11 |
KR20080095283A (ko) | 2008-10-28 |
CN101385135B (zh) | 2010-12-01 |
WO2007094418A1 (ja) | 2007-08-23 |
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