JP2994510B2 - 半導体装置およびその製法 - Google Patents

半導体装置およびその製法

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Publication number
JP2994510B2
JP2994510B2 JP4023731A JP2373192A JP2994510B2 JP 2994510 B2 JP2994510 B2 JP 2994510B2 JP 4023731 A JP4023731 A JP 4023731A JP 2373192 A JP2373192 A JP 2373192A JP 2994510 B2 JP2994510 B2 JP 2994510B2
Authority
JP
Japan
Prior art keywords
adhesive
tape
double
semiconductor chip
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP4023731A
Other languages
English (en)
Other versions
JPH05226387A (ja
Inventor
篤人 根来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP4023731A priority Critical patent/JP2994510B2/ja
Publication of JPH05226387A publication Critical patent/JPH05226387A/ja
Priority to US08/218,764 priority patent/US5411921A/en
Application granted granted Critical
Publication of JP2994510B2 publication Critical patent/JP2994510B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は半導体装置およびその製
法に関する。さらに詳しくは、半導体チップのリードフ
レームにおけるダイパッド部への接着を改良した半導体
装置およびその製法に関する。
【０００２】
【従来の技術】従来より、半導体装置を製造するばあ
い、半導体チップをリードフレームのダイパッド上に接
着する、いわゆるダイボンディングを行い、各リードと
のワイヤボンディングなどの電気的接続をし、樹脂でこ
れらの部分を封入成形（以下、モールドという）するこ
とにより半導体装置を形成している。ダイボンディング
は図６に示すように42Ｎｉ合金などの金属薄板からなる
リードフレームのダイパッド部８上にＡｕ、Ａｕ−Ｓ
ｉ、ハンダ、ペーストなどの接着材料であるプリフォー
ム材10を塗布して半導体チップ４の接着を行っている。
【０００３】前記プリフォーム材10が金属材料のばあい
には接着するのに高温にしなければならない。たとえば
Ａｕ−Ｓｉのばあいダイパッド部８を約300 ℃で数秒間
の予熱を行い、接着時には500 〜600 ℃に加熱して接着
し、そののち徐冷することにより接着している。
【０００４】ペーストのばあい、伝導性のため銀粉など
を混入したエポキシ樹脂などを材料としており接着作業
時は常温で行えるが、その樹脂を硬化するため、オーブ
ンでまとめて約170 ℃で10〜20時間のエージングを行っ
ている。
【０００５】
【発明が解決しようとする課題】しかし、前述のプリフ
ォーム材で、Ａｕ、Ａｕ−Ｓｉ、ハンダなどの金属材料
を使用すると、接着時に高温にしなければならないた
め、半導体チップに熱ストレスがかかり、半導体特性に
悪影響を及ぼすという問題がある。
【０００６】さらに接着するに当って予備加熱をした
り、接着後には徐冷しなければならないため、たとえば
予備加熱の300 ℃、接着時の500 〜600 ℃、接着後の徐
冷のための300 ℃、100 ℃、25℃（常温）の加熱台が必
要となり設備が高価になるという問題がある。
【０００７】また、ペーストで接着するばあいには、そ
れ程高温にする必要はないが、170℃位で10〜20時間の
エージングを必要とし、作業性がわるく、コストアップ
につながると共に、高温でないとはいえ長時間高い温度
に半導体装置をさらさなければならないことおよびペー
ストから発生する揮発性の有機ガスがハンダを腐蝕した
りするなど、半導体の特性を劣化させるという問題があ
る。
【０００８】また、ＭＯＳ型半導体装置では電流は少な
く、半導体基板およびダイパッド部を介して熱放散や半
導体基板の裏面に電流を流す必要がなくなってきてお
り、ダイボンディング材として電気伝導や熱伝導を考慮
するより、半導体特性への悪影響の防止やダイボンディ
ングの作業性の向上が望まれている。
【０００９】本発明はこのような状況に鑑み加熱をしな
いで簡単にダイボンディングできる半導体装置およびそ
の製法を提供することを目的とする。
【００１０】
【課題を解決するための手段】本発明による半導体装置
はリードフレームのダイパッド部に半導体チップがダイ
ボンディングされ、該半導体チップおよびその周囲のリ
ードとの電気的接続部が樹脂で封入成形されてなる半導
体装置であって、前記半導体チップのダイボンディング
が両面接着テープでなされ、該両面接着テープは前記半
導体チップと接着する側の面に接着力の大きい第１の接
着剤が塗布され、前記半導体チップが接着される側と反
対面に前記第１の接着剤より接着力の小さい第２の接着
剤が塗布されていることを特徴とするものである。
【００１１】また、本発明による半導体装置の製法はエ
キスパンドテープに、一面に接着力の大きい第１の接着
剤が塗布され、他面に前記第１の接着剤より接着力の小
さい第２の接着剤が塗布された両面接着テープを前記第
２の接着剤により貼付し、該両面接着テープ上に前記第
１の接着剤により半導体ウエハを貼付する工程、前記半
導体ウエハをダイシングし前記両面接着テープまで切断
する工程、前記エキスパンドテープを拡張し各半導体チ
ップに分離する工程および前記分離した各々の半導体チ
ップを両面接着テープと共に吸着して前記エキスパンド
テープから剥離し、リードフレームのダイパッド部に前
記両面接着テープの第２の接着剤により接着する工程を
含むことを特徴とするものである。
【００１２】
【作用】本発明によれば半導体チップとリードフレーム
のダイパッド部との接着を、従来の金属材料やペースト
でなく、両面に接着剤が塗布された両面接着テープを用
いて行っているため、接着時の加熱やエージングの必要
がなく、半導体チップへの加熱による影響を全く生じさ
せないで簡単に接着作業を行える。またダイボンディン
グ後樹脂でモールドしており、半導体チップとダイパッ
ド部は樹脂で完全に固着されているため、経時変化に対
しても半導体チップの接着性が問題になることはない。
【００１３】さらに本発明による半導体装置の製法によ
れば、半導体ウエハの大きさに合わせた両面接着テープ
を準備し、半導体ウエハのダイシング前にエキスパンド
テープと半導体ウエハとのあいだに両面接着テープを介
在させておき、半導体ウエハのダイシングのとき両面接
着テープも半導体チップの大きさに合わせて切断し、半
導体チップをエキスパンドテープからピックアップする
とき両面接着テープも半導体チップの裏面に接着したま
まエキスパンドテープから剥離し、ダイパッド部に圧接
するだけで接着されるため殆ど工数が増加することな
く、簡単に接着できる。
【００１４】
【実施例】つぎに図面を参照しながら、本発明の半導体
装置の製法について説明する。図１〜５は本発明の半導
体装置の製法の主要部であるダイボンディングの各工程
を示す説明図である。
【００１５】まず図１に示すように、塩ビフィルムなど
で作られたエキスパンドテープ１の表面に両面接着テー
プ２を貼付し、その上に半導体ウエハ３をその裏面が両
面接着テープに面するように貼付する。この両面接着テ
ープはたとえばポリイミドフィルムなどの樹脂フィルム
に通常の接着剤を塗布したもので、半導体ウエハ３より
大きく形成したものを使用する。
【００１６】つぎに図２に示すように、半導体ウエハの
表面に碁板の目状に形成された同一の半導体回路を各半
導体チップ４に分割するため、ダイヤモンドカッタで各
半導体回路の境界に切断線５を入れる。このとき、切断
線５は半導体ウエハ３の裏面を完全に通過すると共に、
両面接着テープ２も完全に通過しエキスパンドテープ１
にまで入るように切断する。しかしエキスパンドテープ
１の大部分は切断されず、切断された各半導体チップ４
は両面接着テープ２によりエキスパンドテープ１に貼付
されており、各半導体チップ４がバラバラになることは
ない。
【００１７】つぎに、エキスパンドテープ１の外枠（図
示してない）を容器に取り付け真空吸引または加圧する
ことによりエキスパンドテープを伸長させると、エキス
パンドテープ１が伸びて塑性変形し、図３に示すように
各半導体チップ４に分離される。
【００１８】この状態で再度エキスパンドテープ１の外
枠を半導体チップ吸着装置に取り付け、エキスパンドテ
ープの下側を真空吸引しながら突き上げ棒６でピックア
ップすべき半導体チップ４を突き上げる。それと同時に
やはり真空吸引しているコレット７により半導体チップ
４の表面を吸引する。半導体チップ４が、この突き上げ
棒６で突き上げられると、エキスパンドテープの下側は
真空吸引されているため、突き上げ棒６の先端の尖った
部分で押し上げられ、その周囲は吸引されて両面接着テ
ープ２との接着部が剥がれてエキスパンドテープ１が下
側に引張られる。そのため、エキスパンドテープ１と両
面接着テープ２との接着は突き上げ棒６の先端の尖った
部分だけで接着されており、または図４に示すように、
突き上げ棒６がエキスパンドテープ１を突き破って持ち
上げており、上部からコレット７により真空吸引すると
両面接着テープが貼付された半導体チップ４が、エキス
パンドテープ１から容易に剥離し、コレット７によりそ
のままリードフレームのダイパッド部８に運ばれ、圧接
するだけでダイボンディングできる（図５参照）。
【００１９】この半導体チップ４をエキスパンドテープ
１から剥離するときに、両面接着テープ２と半導体チッ
プ４とのあいだで剥離することも考えられるが、図４に
示すように、突き上げ棒６がエキスパンドテープ１を突
き破って半導体チップ４を押し上れば、確実にエキスパ
ンドテープ１との接着面で剥離する。また、突き上げ棒
６がエキスパンドテープ１を突き破らなくても、突き上
げ棒６の周囲でエキスパンドテープ１が吸引されている
ため、小さく切断された両面接着テープ２がくの字状に
変形した尖鋭端には接着しにくく、常にエキスパンドテ
ープ１との接着面で剥離される。もっとも、両面接着テ
ープ２の接着力をエキスパンドテープ１側の接着力が半
導体チップ４側の接着力より小さくなるように調製して
おけば一層効果的である。
【００２０】こののち、半導体チップ４上のボンディン
グパッドとリードフレームの各リード端子とを金線など
でワイヤボンディングなどの電気的接続をし、その周囲
を樹脂９でモールドし、各リードの連結部を切り離しフ
ォーミングすることにより半導体装置をうることができ
る。
【００２１】
【発明の効果】以上説明したように、本発明によれば半
導体チップをリードフレームのダイパッド部に接着する
のに、両面接着テープを用いているため、接着時に高温
に上げたり、長時間のエーシングの必要がなく、また半
導体に有害な揮発性ガスの発生もなく半導体チップへの
熱ストレスなど特性への悪影響が生じなく、高歩留、高
特性で信頼性の高い半導体装置がえられる。
【００２２】さらに本発明によれば、両面接着テープの
貼付は半導体ウエハの大きい状態で行え、簡単にできる
と共に、各半導体チップと同じサイズへの切断は半導体
ウエハの切断と同時にできるため、殆ど工数は増加しな
い。むしろ逆に接着のための加熱、徐冷やエーシングの
必要が全然ないため、全体的な製造工数は大幅に減少
し、しかも加熱器具などの設備は不要となり、コストダ
ウンに大幅に寄与する効果がある。
【図面の簡単な説明】
【図１】本発明の半導体装置の製法の一実施例の工程を
説明する図である。
【図２】本発明の半導体装置の製法の一実施例の工程を
説明する図である。
【図３】本発明の半導体装置の製法の一実施例の工程を
説明する図である。
【図４】本発明の半導体装置の製法の一実施例の工程を
説明する図である。
【図５】本発明の半導体装置の製法の一実施例の工程を
説明する図である。
【図６】従来のダイボンディング方法を説明する図であ
る。
【符号の説明】
１ エキスパンドテープ ２ 両面接着テープ ３ 半導体ウエハ ４ 半導体チップ ８ ダイパッド部 ９ 樹脂

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項１】 リードフレームのダイパッド部に半導体
    チップがダイボンディングされ、該半導体チップおよび
    その周囲のリードとの電気的接続部が樹脂で封入成形さ
    れてなる半導体装置であって、前記半導体チップのダイ
    ボンディングが両面接着テープでなされ、該両面接着テ
    ープは前記半導体チップと接着する側の面に接着力の大
    きい第１の接着剤が塗布され、前記半導体チップが接着
    される側と反対面に前記第１の接着剤より接着力の小さ
    い第２の接着剤が塗布されていることを特徴とする半導
    体装置。
  2. 【請求項２】 エキスパンドテープに、一面に接着力の
    大きい第１の接着剤が塗布され、他面に前記第１の接着
    剤より接着力の小さい第２の接着剤が塗布された両面接
    着テープを前記第２の接着剤により貼付し、該両面接着
    テープ上に前記第１の接着剤により半導体ウエハを貼付
    する工程、 前記半導体ウエハをダイシングし前記両面接着テープま
    で切断する工程、 前記エキスパンドテープを拡張し各半導体チップに分離
    する工程および前記分離した各々の半導体チップを両面
    接着テープと共に吸着して前記エキスパンドテープから
    剥離し、リードフレームのダイパッド部に前記両面接着
    テープの第２の接着剤により接着する工程を含むことを
    特徴とする半導体装置の製法。
JP4023731A 1992-02-10 1992-02-10 半導体装置およびその製法 Expired - Fee Related JP2994510B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4023731A JP2994510B2 (ja) 1992-02-10 1992-02-10 半導体装置およびその製法
US08/218,764 US5411921A (en) 1992-02-10 1994-03-28 Semiconductor chip die bonding using a double-sided adhesive tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4023731A JP2994510B2 (ja) 1992-02-10 1992-02-10 半導体装置およびその製法

Publications (2)

Publication Number Publication Date
JPH05226387A JPH05226387A (ja) 1993-09-03
JP2994510B2 true JP2994510B2 (ja) 1999-12-27

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