CN102265388A - 热固型芯片接合薄膜 - Google Patents
热固型芯片接合薄膜 Download PDFInfo
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- CN102265388A CN102265388A CN200980152612XA CN200980152612A CN102265388A CN 102265388 A CN102265388 A CN 102265388A CN 200980152612X A CN200980152612X A CN 200980152612XA CN 200980152612 A CN200980152612 A CN 200980152612A CN 102265388 A CN102265388 A CN 102265388A
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- bonding film
- die bonding
- weight
- film
- epoxy resin
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C—CHEMISTRY; METALLURGY
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- C09J161/00—Adhesives based on condensation polymers of aldehydes or ketones; Adhesives based on derivatives of such polymers
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Abstract
本发明的目的在于提供兼具半导体装置的制造所需的储能模量和高胶粘力的热固型芯片接合薄膜以及具有该热固型芯片接合薄膜的切割/芯片接合薄膜。本发明的热固型芯片接合薄膜,在半导体装置的制造时使用,其中,至少含有环氧树脂、酚醛树脂、丙烯酸类共聚物及填料,80℃~140℃下的热固化前的储能模量在10kPa~10MPa的范围内,175℃下的热固化前的储能模量在0.1MPa~3MPa的范围内。
Description
技术领域
本发明涉及将例如半导体芯片等半导体元件固着到衬底或引线框等被粘物上时使用的热固型芯片接合薄膜。另外,本发明涉及该热固型芯片接合薄膜层叠在切割薄膜上而得到的切割/芯片接合薄膜。
背景技术
以往,在制造半导体装置时向引线框或电极构件上固着半导体芯片时采用银浆。所述固着处理通过在引线框的芯片焊盘等上涂布浆状胶粘剂,在其上搭载半导体芯片并使浆状胶粘剂层固化来进行。
但是,浆料胶粘剂由于其粘度行为或劣化等而在涂布量或涂布形状等方面产生大的偏差。结果,形成的浆状胶粘剂厚度不均匀,因此半导体芯片的固着强度缺乏可靠性。即,浆状胶粘剂的涂布量不足时半导体芯片与电极构件之间的固着强度降低,在后续的丝焊工序中半导体芯片剥离。另一方面,浆状胶粘剂的涂布量过多时浆状胶粘剂流延到半导体芯片上而产生特性不良,成品率或可靠性下降。这样的固着处理中的问题,伴随半导体芯片的大型化变得特别显著。因此,需要频繁地进行浆状胶粘剂的涂布量的控制,从而给作业性或生产率带来问题。
在该浆状胶粘剂的涂布工序中,有将浆状胶粘剂另外涂布到引线框或形成的芯片上的方法。但是,在该方法中,浆状胶粘剂层难以均匀化,另外浆状胶粘剂的涂布需要特殊装置或长时间。因此,提出了在切割工序中胶粘保持半导体芯片、并且还提供安装工序所需的芯片固着用胶粘剂层的切割/芯片接合薄膜(例如,参考下述专利文献1)。
这种切割/芯片接合薄膜具有在切割薄膜上层叠有胶粘剂层(芯片接合薄膜)的结构。另外,切割薄膜具有在支撑基材上层叠有粘合剂层的结构。该切割/芯片接合薄膜以下述方式使用。即,在芯片接合薄膜的保持下对半导体晶片进行切割后,拉伸支撑基材而将半导体芯片与芯片接合薄膜一起剥离,并将其分别回收。再通过芯片接合薄膜将半导体芯片胶粘固定到BT衬底或引线框等被粘物上。
在此,现有的芯片接合薄膜在进行芯片接合工序时的芯片接合温度(例如80℃~140℃)下的储能模量高,因此对所述被粘物不显示充分的润湿性,有时胶粘力变小。结果,存在由于在工序内或各工序间的运送过程中受到的振动或被粘物的弯曲,半导体从被粘物上脱落的问题。
另外,现有的芯片接合薄膜在进行丝焊工序时的丝焊温度(例如175℃)下也显示高储能模量,因此有时胶粘力不充分。结果,对胶粘固定在芯片接合薄膜上的半导体芯片进行丝焊时,也存在由于超声波振动或加热而在芯片接合薄膜与被粘物之间的胶粘面产生剪切变形,从而丝焊的成功率下降的问题。
另外,进行利用密封(成形)树脂将芯片接合到被粘物上的半导体芯片密封的成形工序时,存在该半导体芯片在密封树脂的注入时被冲走,从而成品率下降的问题。
现有技术文献
专利文献
专利文献1:日本特开昭60-57342号公报
发明内容
本发明鉴于所述的问题而创立,其目的在于提供兼具半导体装置的制造所需的储能模量和高胶粘力的热固型芯片接合薄膜、以及具有该热固型芯片接合薄膜的切割/芯片接合薄膜。
本申请发明人等为了解决所述现有问题,对热固型芯片接合薄膜进行了研究。结果发现,通过将储能模量控制在规定的数值范围内,该热固型芯片接合薄膜在用于制造半导体装置的规定的各工序中显示良好的润湿性及胶粘性,从而完成了本发明。
即,本发明的热固型芯片接合薄膜,在半导体装置的制造时使用,其特征在于,至少含有环氧树脂、酚醛树脂、丙烯酸类共聚物及填料,80℃~140℃下的热固化前的储能模量在10kPa~10MPa的范围内,175℃下的热固化前的储能模量在0.1MPa~3MPa的范围内。
根据所述构成,通过将80~140℃下的储能模量设定为10kPa~10MPa,在通过热固型芯片接合薄膜(以下有时称为“芯片接合薄膜”)将半导体芯片芯片接合到BT衬底或引线框等被粘物上时,对该被粘物显示充分的润湿性,防止胶粘力下降。结果,可以防止由于芯片接合后的运送中受到的振动或被粘物的弯曲导致半导体芯片从被粘物上脱落。
另外,所述构成中,通过将175℃下的储能模量设定为0.1MPa~3MPa,即使在对半导体芯片进行丝焊时也可以保持充分的胶粘力。结果,在对胶粘固定在芯片接合薄膜上的半导体芯片进行丝焊时,也可以防止由于超声波振动或加热导致芯片接合薄膜与被粘物的胶粘面上产生剪切变形,从而可以提高丝焊的成功率。
另外,即使是利用密封(成形)树脂将芯片接合到被粘物上的半导体芯片进行密封时,也可以防止该半导体芯片在注入密封树脂时被冲走。
所述构成中,设所述环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类共聚物的重量为Y重量份时,比率X/Y优选为0.11~4。通过将环氧树脂和酚醛树脂的合计重量(X重量份)与丙烯酸类共聚物的重量(Y重量份)的重量比率X/Y设定为0.11以上,可以使在175℃热处理1小时后的260℃下的储能模量为0.1MPa以上。结果,即使是在半导体关联部件的可靠性评价中使用的耐湿回流焊接试验中,也可以防止发生芯片接合薄膜的剥离,从而提高可靠性。另一方面,通过将所述X/Y设定为4以下,可以提高芯片接合薄膜作为薄膜的机械强度,从而可以确保自支撑性。
另外,所述构成中,设所述环氧树脂、酚醛树脂和丙烯酸类共聚物的合计重量为A重量份、填料的重量为B重量份时,B/(A+B)优选为0.8以下。通过将填料的含量相对于环氧树脂、酚醛树脂和丙烯酸类共聚物的合计重量设定为0.8以下,可以抑制储能模量过度变大,从而可以更良好地保持对被粘物的润湿性和胶粘性。
另外,所述构成中,优选:所述环氧树脂为具有芳香环的环氧树脂,所述酚醛树脂为苯酚酚醛清漆树脂、苯酚联苯树脂或苯酚芳烷基树脂中的至少任意一种,所述丙烯酸类共聚物为含羧基丙烯酸类共聚物或含环氧基丙烯酸类共聚物中的至少任意一种。
所述构成中,所述填料的平均粒径优选在0.005μm~10μm的范围内。通过将填料的平均粒径设定为0.005μm以上,可以抑制储能模量过度变大,从而可以更良好地保持对被粘物的润湿性和胶粘性。另一方面,通过将所述平均粒径设定为10μm以下,可以对芯片接合薄膜赋予增强效果,提高耐热性。
另外,所述构成中,所述环氧树脂的重均分子量优选在300~1500的范围内。通过将环氧树脂的重均分子量设定为300以上,可以防止热固化后的芯片接合薄膜的机械强度、耐热性、耐湿性下降。另一方面,通过将所述重均分子量设定为1500以下,可以防止热固化后的芯片接合薄膜变刚硬从而变脆。
另外,所述构成中,所述酚醛树脂的重均分子量优选在300~1500的范围内。通过将酚醛树脂的重均分子量设定为300以上,可以对所述环氧树脂的固化物赋予充分的韧性。另一方面,通过将所述重均分子量设定为1500以下,可以抑制粘度变高,从而可以保持良好的作业性。
另外,所述构成中,所述丙烯酸类共聚物的重均分子量优选在10万~100万的范围内。通过将丙烯酸类共聚物的重均分子量设定为10万以上,可以使高温时对布线衬底等被粘物表面的胶粘性优良,并且可提高耐热性。另一方面,通过将所述重均分子量设定为100万以下,可以容易地溶解于有机溶剂。
另外,所述构成中,玻璃化转变温度优选在10℃以上且50℃以下的范围内。通过将芯片接合薄膜的玻璃化转变温度设定为10℃以上,可以防止半导体芯片的芯片接合时产生构成芯片接合薄膜的胶粘剂露出的现象。另一方面,通过将所述玻璃化转变温度设定为50℃以下,可以更良好地保持对被粘物的润湿性和胶粘性。
本发明的切割/芯片接合薄膜,为了解决所述问题,其特征在于,具有在切割薄膜上层叠有所述任一项所述的热固型芯片接合薄膜的结构。
发明效果
本发明通过前面说明过的手段,取得下述的效果。
即,根据本发明,由于将80℃~140℃下的储能模量设定为10kPa~10MPa的范围内、将175℃下的储能模量设定为0.1MPa~3MPa的范围内,因此对BT衬底或引线框等被粘物可以发挥良好的润湿性和胶粘性。结果,例如,通过本发明的热固型芯片接合薄膜将半导体芯片芯片接合到被粘物上的情况下,或对芯片接合后的半导体芯片进行丝焊的情况下,以及将在该被粘物上芯片接合的半导体芯片进行树脂密封的情况下,都可以使半导体芯片保持在被粘物上胶粘固定。即,根据本发明的构成,可以提供能够在提高成品率的情况下制造半导体装置的热固型芯片接合薄膜。
附图说明
图1是表示本发明的一个实施方式的切割/芯片接合薄膜的示意剖视图。
图2是表示所述实施方式的另一个切割/芯片接合薄膜的示意剖视图。
图3是表示通过所述切割/芯片接合薄膜中的芯片接合薄膜安装半导体芯片的例子的示意剖视图。
图4是表示通过所述切割/芯片接合薄膜中的芯片接合薄膜三维安装半导体芯片的例子的示意剖视图。
图5是表示使用所述切割/芯片接合薄膜,隔着隔片利用芯片接合薄膜三维安装两个半导体芯片的例子的示意剖视图。
具体实施方式
以下以切割/芯片接合薄膜的方式为例对本发明的热固型芯片接合薄膜(以下也称为“芯片接合薄膜”)进行说明。本实施方式的切割/芯片接合薄膜10,具有在切割薄膜上层叠有芯片接合薄膜3的结构(参考图1)。所述切割薄膜具有在基材1上层叠有粘合剂层2的结构。芯片接合薄膜3层叠在切割薄膜的粘合剂层2上。
本发明的芯片接合薄膜3,通过至少含有环氧树脂、酚醛树脂、丙烯酸类共聚物和填料而构成。所述芯片接合薄膜3的80℃~140℃下的热固化前的储能模量在10kPa~10MPa的范围内,优选10kPa~5MPa,更优选10kPa~3MPa。通过将所述储能模量设定为10kPa以上,可以提高芯片接合薄膜作为薄膜的机械强度,从而可以确保自支撑性。另一方面,通过将所述储能模量设定为10MPa以下,可以确保对被粘物的润湿性,保持胶粘力。结果,可以防止由于芯片接合后的运送中受到的振动或被粘物的弯曲导致半导体芯片从被粘物上脱落。
另外,芯片接合薄膜3的175℃下的热固化前的储能模量在0.1MPa~3MPa的范围内,优选0.5kPa~2.5MPa,更优选0.7kPa~2.3MPa。通过将175℃下的热固化前的储能模量设定在所述数值范围内,即使在对半导体芯片进行丝焊时也可以保持充分的胶粘力。结果,在对胶粘固定在芯片接合薄膜上的半导体芯片进行丝焊时,可以防止由于超声波振动或加热导致芯片接合薄膜与被粘物的胶粘面上产生剪切变形,从而可以提高丝焊的成功率。
所述芯片接合薄膜3的玻璃化转变温度优选为10℃~50℃,更优选20℃~45℃。通过将所述玻璃化转变温度设定为10℃以上,可以防止半导体芯片的芯片接合时产生构成芯片接合薄膜的胶粘剂露出的现象。另一方面,通过将所述玻璃化转变温度设定50℃以下,可以更良好地保持对被粘物的润湿性和胶粘性。
另外,设环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类共聚物的重量为Y重量份时,其配合比率X/Y(-)优选为0.11~4,更优选0.11~1.5,进一步优选0.11~1.4,特别优选0.11~1,更进一步优选0.11~0.5。通过将配合比率X/Y设定为0.11以上,可以使在175℃热处理1小时后的260℃下的储能模量为0.1MPa以上。结果,即使是在耐湿回流焊接试验中,也可以防止发生芯片接合薄膜3的剥离,从而提高可靠性。另一方面,通过将配合比率设定为4以下,可以提高芯片接合薄膜3作为薄膜的机械强度,从而可以确保自支撑性。
所述环氧树脂,只要是一般作为胶粘剂组合物使用的环氧树脂即可,没有特别限制,可以使用例如:双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三羟苯基甲烷型、四(羟苯基)乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油基胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。在本发明中,这些环氧树脂中特别优选具有苯环、联苯环、萘环等芳香环的环氧树脂。具体地,可以列举例如:酚醛清漆型环氧树脂、含有苯二亚甲基骨架的苯酚酚醛清漆型环氧树脂、含有联苯骨架的酚醛清漆型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、四甲基双酚型环氧树脂、三苯基甲烷型环氧树脂等。因为这些环氧树脂与作为固化剂的酚醛树脂的反应性高、并且耐热性等优良。另外,环氧树脂中腐蚀半导体元件的离子性杂质等的含量少。
所述环氧树脂的重均分子量优选在300~1500的范围内,更优选350~1000的范围内。重均分子量低于300时,有时热固化后的芯片接合薄膜3的机械强度、耐热性、耐湿性下降。另一方面,超过1500时,有时热固化后芯片接合薄膜变得刚硬从而变脆。另外,本发明中的重均分子量,是指通过凝胶渗透色谱法(GPC)使用聚苯乙烯校准曲线而得到的聚苯乙烯换算值。
另外,所述酚醛树脂作为所述环氧树脂的固化剂起作用,可以列举例如:苯酚酚醛清漆树脂、苯酚联苯树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶酚醛树脂型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚醛树脂可以单独使用或者两种以上组合使用。这些酚醛树脂中优选以下述化学式表示的联苯型苯酚酚醛清漆树脂或者苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
(所述n为0~10的自然数。)
另外,所述n优选为0~10的自然数,更优选0~5的自然数。通过设定在所述数值范围内,可以确保芯片接合薄膜3的流动性。
所述酚醛树脂的重均分子量优选在300~1500的范围内,更优选350~1000的范围内。重均分子量低于300时,有时所述环氧树脂的热固化不充分,从而不能得到充分的韧性。另一方面,重均分子量超过1500时,粘度变高,从而有时芯片接合薄膜制作时的作业性下降。
所述环氧树脂与酚醛树脂的配合比例,例如以相对于所述环氧树脂成分中的环氧基每1当量,酚醛树脂中的羟基为0.5~2.0当量的方式进行配合是适当的。更优选为0.8~1.2当量。这是因为:即,两者的配合比例如果在所述范围以外,则不会进行充分的固化反应,环氧树脂固化物的特性容易变差。
作为所述丙烯酸类共聚物,没有特别限制,在本发明中优选含羧基丙烯酸类共聚物、含环氧基丙烯酸类共聚物。作为所述含羧基丙烯酸类共聚物中使用的官能团单体,可以列举丙烯酸或甲基丙烯酸。丙烯酸或甲基丙烯酸的含量以使得酸值在1~4的范围内的方式进行调节。其余可以使用丙烯酸甲酯、甲基丙烯酸甲酯等具有碳原子数1~8的烷基的丙烯酸烷基酯、甲基丙烯酸烷基酯、苯乙烯或者丙烯腈等的混合物。这些物质中,特别优选(甲基)丙烯酸乙酯和/或(甲基)丙烯酸丁酯。混合比率优选考虑着后述的所述丙烯酸类共聚物的玻璃化转变温度(Tg)来调节。另外,聚合方法没有特别限制,可以采用例如溶液聚合法、本体聚合法、悬浮聚合法、乳液聚合法等现有公知的方法。
另外,作为能够与所述单体成分的其它单体成分没有特别限制,可以列举例如丙烯腈等。这些可共聚的单体成分的使用量相对于全部单体成分优选在1~20重量%的范围内。通过含有该数值范围内的其它单体成分,可以改良内聚力、胶粘性等。
作为丙烯酸类共聚物的聚合方法,没有特别限制,可以采用例如溶液聚合法、本体聚合法、悬浮聚合法、乳液聚合法等现有公知的方法。
所述丙烯酸类共聚物的玻璃化转变温度(Tg)优选为-30~30℃,更优选-20~15℃。通过将玻璃化转变温度设定为-30℃以上,可以确保耐热性。另一方面,通过设定为30℃以下,可以提高表面状态粗糙的晶片切割后的芯片飞散防止效果。
所述丙烯酸类共聚物的重均分子量优选为10万~100万,更优选35万~90万。通过将重均分子量设定为10万以上,可以使得高温时对被粘物的胶粘性优良、并且可以提高耐热性。另一方面,通过将重均分子量设定为100万以下,可以容易地溶解于有机溶剂。
所述填料可以列举无机填料或有机填料。从提高操作性和导热性、调节熔融粘度以及赋予触变性等观点考虑,优选无机填料。
作为所述无机填料,没有特别限制,可以列举例如:二氧化硅、氢氧化铝、氢氧化钙、氢氧化镁、三氧化二锑、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝、氮化硼、结晶二氧化硅、非晶二氧化硅等。这些填料可以单独使用或者两种以上组合使用。从提高导热性的观点考虑,优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅等。另外,从与芯片接合薄膜3的胶粘性的平衡的观点考虑,优选二氧化硅。另外,作为所述有机填料,可以列举聚酰亚胺、聚酰胺酰亚胺、聚醚醚酮、聚醚酰亚胺、聚酯酰亚胺、尼龙、聚硅氧烷等。这些物质可以单独使用或者两种以上组合使用。
所述填料的平均粒径优选为0.005~10μm,更优选0.05~1μm。填料的平均粒径为0.005μm以上时,可以使对被粘物的润湿性良好,可以抑制胶粘性的下降。另一方面,通过将所述平均粒径设定为10μm以下,可以提高通过添加填料产生的对芯片接合薄膜3的增强效果,提高耐热性。另外,也可以将平均粒径互不相同的填料组合使用。另外,填料的平均粒径是利用例如光度式的粒度分布计(HORIBA制,装置名:LA-910)求得的值。
所述填料的形状没有特别限制,可以使用例如球形、椭球形的填料。
另外,设环氧树脂、酚醛树脂和丙烯酸类共聚物的合计重量为A重量份、填料的重量为B重量份时,比率B/(A+B)优选为大于0且0.8以下,更优选大于0且7以下。所述比率为0时,不产生添加填料的增强效果,具有芯片接合薄膜3的耐热性下降的倾向。另一方面,所述比率超过0.8时,有时对被粘物的润湿性和胶粘性下降。
另外,芯片接合薄膜3、3’中根据需要可以适当配合其它添加剂。作为其它添加剂,可以列举例如:阻燃剂、硅烷偶联剂或离子捕获剂等。
作为所述阻燃剂,可以列举例如:三氧化二锑、五氧化二锑、溴化环氧树脂等。这些物质可以单独使用或者两种以上组合使用。
作为所述硅烷偶联剂,可以列举例如:β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。
作为所述离子捕获剂,可以列举例如:水滑石类、氢氧化铋等。这些物质可以单独使用或者两种以上组合使用。
作为所述环氧树脂与酚醛树脂的热固化促进催化剂没有特别限制,优选例如:具有三苯基膦骨架、胺骨架、三苯基硼烷骨架、三卤代硼烷骨架等任意一种骨架的盐。
芯片接合薄膜3的厚度(层压体的情况下为总厚度)没有特别限制,例如为约5μm至约100μm,优选约5μm至约50μm。
另外,芯片接合薄膜例如可以采用仅由胶粘剂层单层构成的结构。另外,也可以将玻璃化转变温度不同的热塑性树脂、热固化温度不同的热固性树脂适当地组合而制成两层以上的多层结构。另外,在半导体晶片的切割工序中使用切削水,因此有时芯片接合薄膜吸湿从而含水率达到常态以上。如果以这样高的含水率直接胶粘到衬底上,则在后固化阶段水蒸汽积存在胶粘界面,从而有时产生翘起。因此,作为芯片接合薄膜,通过采用用胶粘剂层夹持透湿性高的芯材的结构,在后固化阶段水蒸汽透过薄膜扩散,可以避免所述问题。从这样的观点考虑,芯片接合薄膜可以采用在芯材的单面或双面形成有胶粘剂层的多层结构。
作为所述芯材,可以列举:薄膜(例如,聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、镜面硅晶片(ミラ一シリコンウエハ)、硅衬底或玻璃衬底等。
另外,芯片接合薄膜3优选由隔片保护(未图示)。隔片具有在供给实际应用之前作为保护芯片接合薄膜的保护材料的功能。另外,隔片还可以作为向切割薄膜转印芯片接合薄膜3、3’时的支撑基材使用。隔片在向芯片接合膜上粘贴工件时剥离。作为隔片,可以使用聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯,也可以使用由含氟剥离剂、长链烷基丙烯酸酯类剥离剂等剥离剂进行了表面涂敷的塑料薄膜或纸等。
另外,作为本发明的切割/芯片接合薄膜,除了图1所示的芯片接合薄膜3以外,也可以采用图2所示的仅在半导体晶片粘贴部分层叠有芯片接合薄膜3’的切割/芯片接合薄膜11的结构。
所述基材1作为切割/芯片接合薄膜10、11的强度母体。可以列举例如:低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、丙烯均聚物、聚丁烯、聚甲基戊烯等聚烯烃、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷树脂、金属(箔)、纸等。粘合剂层2为紫外线固化型的情况下,优选基材1对紫外线具有透射性。
另外,作为基材1的材料,可以列举所述树脂的交联体等聚合物。所述塑料薄膜可以不拉伸使用,也可以根据需要进行单轴或双轴拉伸处理后使用。利用通过拉伸处理等而赋予了热收缩性的树脂片,通过在切割后使该基材1热收缩,可以减小粘合剂层2与芯片接合薄膜3、3’的胶粘面积,从而可以容易地回收半导体芯片。
为了提高与邻接层的密合性、保持性等,基材1的表面可以实施惯用的表面处理,例如,铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离射线处理等化学或物理处理、利用底涂剂(例如后述的粘合物质)的涂布处理。
所述基材1可以适当地选择使用同种或不同种类的材料,根据需要可以使用将数种材料共混后的材料。另外,为了赋予基材1防静电性能,可以在所述基材1上设置包含金属、合金、它们的氧化物等的厚度为的导电物质的蒸镀层。基材1可以是单层或者两种以上的多层。
基材1的厚度没有特别限制,可以适当确定,一般为约5μm~约200μm。
所述粘合剂层2通过包含紫外线固化型粘合剂而构成。紫外线固化型粘合剂可以通过紫外线的照射增大交联度而容易地降低其粘合力,通过仅对图2所示的粘合剂层2的与半导体晶片粘贴部分对应的部分2a照射紫外线,可以设置2a与其它部分2b的粘合力之差。
另外,通过依照图2所示的芯片接合薄膜3’使紫外线固化型的粘合剂层2固化,可以容易地形成粘合力显著下降的所述部分2a。由于芯片接合薄膜3’粘贴在固化而粘合力下降的所述部分2a上,因此粘合剂层2的所述部分2a与芯片接合薄膜3’的界面具有拾取时容易剥离的性质。另一方面,未照射紫外线的部分具有充分的粘合力,形成所述部分2b。
如前所述,图1所示的切割/芯片接合薄膜10的粘合剂层2中,由未固化的紫外线固化型粘合剂形成的所述部分2b与芯片接合薄膜3粘合,可以确保切割时的保持力。这样,紫外线固化型粘合剂可以以良好的胶粘-剥离平衡支撑用于将半导体芯片固着到被粘物上的芯片接合薄膜3。图2所示的切割/芯片接合薄膜11的粘合剂层2中,所述部分2b可以将贴片环(wafer ring)16固定。所述被粘物6没有特别限制,可以列举例如:BGA衬底等各种衬底、引线框、半导体元件、垫片等。
所述紫外线固化型粘合剂可以没有特别限制地使用具有碳-碳双键等紫外线固化性官能团,并且显示粘合性的紫外线固化型粘合剂。作为紫外线固化型粘合剂,可以例示例如:在丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏粘合剂中配合有紫外线固化性的单体成分或低聚物成分的添加型紫外线固化型粘合剂。
作为所述压敏粘合剂,从半导体晶片或玻璃等避忌污染的电子部件的超纯水或醇类等有机溶剂的清洁洗涤性等的观点考虑,优选以丙烯酸类聚合物为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物,可以列举例如:使用(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数1~30、特别是碳原子数4~18的直链或支链烷基酯等)和(甲基)丙烯酸环烷酯(例如,环戊酯、环己酯等)的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外,(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯,本发明的(甲基)全部表示相同的含义。
为了改善内聚力、耐热性等,所述丙烯酸类聚合物根据需要可以含有与能够同所述(甲基)丙烯酸烷基酯或环烷酯共聚的其它单体成分对应的单元。作为这样的单体成分,可以列举例如:丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧基乙酯、(甲基)丙烯酸羧基戊酯、衣康酸、马来酸、富马酸、巴豆酸等含羧基单体;马来酸酐、衣康酸酐等酸酐单体;(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯等含羟基单体;苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸等含磺酸基单体;丙烯酰磷酸-2-羟基乙酯等含磷酸基单体;丙烯酰胺、丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量%以下。
另外,所述丙烯酸类聚合物为了进行交联根据需要也可以含有多官能单体等作为共聚用单体成分。作为这样的多官能单体,可以列举例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体也可以使用一种或两种以上。多官能单体的使用量从粘合特性等观点考虑优选为全部单体成分的30重量%以下。
所述丙烯酸类聚合物可以通过将单一单体或两种以上单体的混合物聚合来得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止对洁净被粘物的污染等观点考虑,优选低分子量物质的含量少。从该点考虑,丙烯酸类聚合物的数均分子量优选为约30万以上,更优选约40万~约300万。
另外,为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量,所述粘合剂中也可以适当采用外部交联剂。外部交联方法的具体手段可以列举:添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂并使其反应的方法。使用外部交联剂时,其使用量根据与应交联的基础聚合物的平衡以及作为粘合剂的使用用途适当确定。一般而言,相对于所述基础聚合物100重量份优选配合约5重量份以下,进一步优选配合0.1~5重量份。另外,根据需要,在粘合剂中除所述成分以外也可以使用以往公知的各种增粘剂、抗老化剂等添加剂。
作为用于配合的所述紫外线固化性单体成分,可以列举例如:氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,紫外线固化性低聚物成分可以列举聚氨酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物,其分子量在约100~约30000的范围内是适当的。紫外线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类适当地确定能够降低粘合剂层的粘合力的量。一般而言,相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约5重量份~约500重量份,优选约40重量份~约150重量份。
另外,作为紫外线固化型粘合剂,除了前面说明的添加型紫外线固化型粘合剂以外,还可以列举使用在聚合物侧链或主链中或者主链末端具有碳碳双键的聚合物作为基础聚合物的内在型紫外线固化型粘合剂。内在型紫外线固化型粘合剂无需含有或者不大量含有作为低分子量成分的低聚物成分等,因此低聚物成分等不会随时间推移在粘合剂中移动,可以形成具有稳定的层结构的粘合剂层,因此优选。
所述具有碳碳双键的基础聚合物,可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物,优选以丙烯酸类聚合物作为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架,可以列举前面例示过的丙烯酸类聚合物。
所述丙烯酸类聚合物中碳碳双键的引入方法没有特别限制,可以采用各种方法,而将碳碳双键引入聚合物侧链在分子设计上比较容易。可以列举例如:预先将具有官能团的单体与丙烯酸类聚合物共聚后,使具有能够与该官能团反应的官能团和碳碳双键的化合物在保持碳碳双键的紫外线固化性的情况下进行缩合或加成反应的方法。
作为这些官能团的组合例,可以列举例如:羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中考虑到反应跟踪的容易性,优选羟基与异氰酸酯基的组合。另外,如果是通过这些官能团的组合而生成所述具有碳碳双键的丙烯酸类聚合物的组合,则官能团可以在丙烯酸类聚合物与所述化合物的任意一者上,在所述的优选组合中,优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基的情况。此时,作为具有碳碳双键的异氰酸酯化合物,可以列举例如:甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α,α-二甲基苄基异氰酸酯等。另外,作为丙烯酸类聚合物,可以使用将前面例示的含羟基单体、2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚类化合物等作为可共聚单体进行共聚而得到的聚合物。
所述内在型紫外线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物),也可以在不损害特性的范围内配合所述紫外线固化性单体成分或低聚物成分。紫外线固化性低聚物成分等相对于基础聚合物100重量份通常在30重量份的范围内,优选0~10重量份的范围。
所述紫外线固化型粘合剂在通过紫外线等固化时可以含有光聚合引发剂。作为光聚合引发剂,可以列举例如:4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α,α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等α-酮醇类化合物;甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-吗啉基)丙烷-1-酮等苯乙酮类化合物;苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲醚等苯偶姻醚类化合物;联苯酰二甲基缩酮等缩酮类化合物;2-萘磺酰氯等芳香族磺酰氯类化合物;1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等光活性肟类化合物;二苯甲酮、苯甲酰苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等二苯甲酮类化合物;噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2,4-二甲基噻吨酮、异丙基噻吨酮、2,4-二氯噻吨酮、2,4-二乙基噻吨酮、2,4-二异丙基噻吨酮等噻吨酮类化合物;樟脑醌;卤代酮;酰基氧化膦;酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份,例如为约0.05重量份~约20重量份。
另外,作为紫外线固化型粘合剂,可以列举例如:日本特开昭60-196956号公报中所公开的、含有具有2个以上不饱和键的加成聚合性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物、和羰基化合物、有机硫化合物、过氧化物、胺、盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
作为在所述粘合剂层2中形成所述部分2a的方法,可以列举:在基材1上形成紫外线固化型粘合剂层2后,对所述部分2a局部地照射紫外线使其固化的方法。局部的紫外线照射可以通过形成有与半导体晶片粘贴部分3a以外的部分3b等对应的图案的光掩模来进行。另外,可以列举点状照射紫外线进行固化的方法等。紫外线固化型粘合剂层2的形成可以通过将设置在隔片上的紫外线固化型粘合剂层转印到基材1上来进行。局部的紫外线照射也可以对设置在隔片上的紫外线固化型粘合剂层2进行。
切割/芯片接合薄膜10的粘合剂层2中,可以对粘合剂层2的一部分进行紫外线照射,使所述部分2a的粘合力<其它部分2b的粘合力。即,可以使用对基材1的至少单面的、与半导体晶片粘贴部分3a对应的部分以外的部分的全部或局部进行遮光的基材,在该基材上形成紫外线固化型粘合剂层2后进行紫外线照射,使与半导体晶片粘贴部分3a对应的部分固化,从而形成粘合力下降的所述部分2a。作为遮光材料,可以通过在支撑薄膜上印刷或蒸镀等能够成为光掩模的材料来制作。由此,可以高效地制造本发明的切割/芯片接合薄膜10。
另外,紫外线照射时,产生氧阻碍固化的情况下,期望将氧(空气)与紫外线固化型的粘合剂层2的表面隔绝。作为其方法,可以列举例如:用隔片覆盖粘合剂层2的表面的方法;或在氮气气氛中进行紫外线等紫外线照射的方法;等。
粘合剂层2的厚度没有特别限制,从防止芯片切割面的缺损和保持胶粘层的固定的兼顾性等观点考虑,优选为约1μm~约50μm。更优选2μm~30μm,进一步优选5μm~25μm。
(半导体装置的制造方法)
以下,对使用本实施方式的切割/芯片接合薄膜10的半导体装置的制造方法进行说明。
首先,如图1所示,将半导体晶片4压接在切割/芯片接合薄膜10中的胶粘剂层3的半导体晶片粘贴部分3a上,并使其胶粘保持而固定(安装工序)。本工序利用压接辊等按压手段按压来进行。
然后,进行半导体晶片4的切割。由此,将半导体晶片4切割为预定尺寸而小片化,制作半导体芯片5。切割例如按照常规方法从半导体晶片4的电路面一侧进行。另外,本工序中,例如,可以采用切入到切割/芯片接合薄膜10的、称为全切割的切割方式等。本工序中使用的切割装置没有特别限制,可以采用现有公知的切割装置。另外,半导体晶片由切割/芯片接合薄膜10胶粘固定,因此可以抑制芯片缺损或芯片飞散,并且可以抑制半导体晶片4的破损。
为了剥离由切割/芯片接合薄膜10胶粘固定的半导体芯片,进行半导体芯片5的拾取。拾取方法没有特别限制,可以采用现有公知的各种方法。可以列举例如:用针将各个半导体芯片5从切割/芯片接合薄膜10一侧上推,利用拾取装置拾取上推的半导体芯片5的方法等。
在此,在粘合剂层2为紫外线固化型的情况下,在对该粘合剂层2照射紫外线后进行拾取。由此,粘合剂层2对芯片接合薄膜3a的粘合力下降,使半导体芯片5容易剥离。结果,可以在不损伤半导体芯片5的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制,可以根据需要适当设定。另外,作为紫外线照射时使用的光源,可以使用所述的光源。
然后,如图3所示,利用芯片接合薄膜3a将通过切割形成的半导体芯片5芯片接合到被粘物6上。芯片接合通过压接来进行。作为芯片接合的条件没有特别限制,可以根据需要适当设定。具体而言,可以在例如:芯片接合温度80℃~160℃、芯片接合压力5N~15N、芯片接合时间1秒~10秒的条件下进行。
接着,通过进行加热处理将芯片接合薄膜3a热固化,使半导体芯片5与被粘物6胶粘。作为加热处理条件,优选温度在80℃~180℃的范围内、并且加热时间为0.1小时~24小时、优选0.1小时~4小时、更优选0.1小时~1小时的范围内。
然后进行利用焊线7将被粘物6的端子部(内部引线)的末端与半导体芯片5上的电极焊盘(未图示)电连接的丝焊工序。作为所述焊线7,可以使用例如:金线、铝线或铜线等。进行丝焊时的温度在80℃~250℃、优选80℃~220℃的范围内进行。另外,其加热时间进行数秒~数分钟。接线是在加热到所述温度范围内的状态下,通过组合使用超声波振动能和施加的压力而产生的压接能来进行。
在此,热固化后的芯片接合薄膜3a在175℃下优选具有0.01MPa以上的剪切胶粘力,更优选0.01~5MPa。通过将热固化后的175℃下的剪切胶粘力设定为0.01MPa以上,可以防止由于丝焊工序时的超声波振动或加热引起的在芯片接合薄膜3a与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即,半导体元件不会由于丝焊时的超声波振动而活动,由此,可以防止丝焊成功率下降。
另外,丝焊工序可以在不通过加热处理使芯片接合薄膜3热固化的情况下进行。此时,芯片接合薄膜3a的25℃下的剪切胶粘力对于被粘物优选为0.2MPa以上,更优选0.2~10MPa。通过将所述剪切胶粘力设定为0.2MPa以上,即使在不使芯片接合薄膜3a热固化的情况下进行丝焊工序,也不会由于该工序中的超声波振动或加热而在芯片接合薄膜3a与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即,半导体元件不会由于丝焊时的超声波振动而活动,由此,可以防止丝焊成功率下降。
另外,未固化的芯片接合薄膜3a即使进行丝焊工序也不会完全热固化。另外,芯片接合薄膜3a的剪切胶粘力即使在80℃~250℃的温度范围内也需要为0.2MPa以上。这是因为:该温度范围内的剪切胶粘力低于0.2MPa时,半导体元件由于丝焊时的超声波振动或加热而活动,不能进行丝焊,从而成品率下降。
接着,进行用密封树脂8将半导体芯片5密封的密封工序。本工序是为了保护搭载在被粘物6上的半导体芯片5或焊线7而进行的。本工序通过用模具将密封用的树脂成形来进行。作为密封树脂8,例如可以使用环氧类树脂。树脂密封时的加热温度通常在175℃下进行60秒~90秒,但是,本发明不限于此,例如,也可以在165℃~185℃下固化数分钟。由此,使密封树脂固化,并且即使在芯片接合薄膜3a未热固化的情况下,也使该芯片接合薄膜3a热固化。即,本发明中,即使在不进行后述的后固化工序的情况下,本工序中也可以通过使芯片接合薄膜3a热固化来进行胶粘,从而可以有助于减少制造工序数及缩短半导体装置的制造时间。
所述后固化工序中,使在所述密封工序中固化不足的密封树脂8完全固化。即使在密封工序中芯片接合薄膜3a未热固化的情况下,在本工序中也可以使芯片接合薄膜3a与密封树脂8一起热固化从而进行胶粘固定。本工序中的加热温度因密封树脂的种类而异,例如,在165℃~185℃的范围内,加热时间为约0.5小时~约8小时。
另外,本发明的切割/芯片接合薄膜,也可以适合用于如图4所示将多个半导体芯片层叠进行三维安装的情况。图4是表示通过芯片接合薄膜三维安装半导体芯片的例子的示意剖视图。图4所示的三维安装的情况下,首先,将切割为与半导体芯片相同尺寸的至少一个芯片接合薄膜3a粘贴在被粘物6上,然后,通过芯片接合薄膜3a将半导体芯片5以其丝焊面为上侧的方式进行芯片接合。然后,避开半导体芯片5的电极焊盘部分将芯片接合薄膜13进行粘贴。进而,将另一个半导体芯片15以其丝焊面为上侧的方式芯片接合到芯片接合薄膜13上。然后,通过将芯片接合薄膜3a、13加热使其热固化而胶粘固定,提高耐热强度。作为加热条件,与所述同样,优选温度在80℃~200℃的范围内,并且加热时间在0.1小时~24小时的范围内。
另外,本发明中可以不使芯片接合薄膜3a、13热固化而仅仅进行芯片接合。之后,也可以不经加热工序进行丝焊,再用密封树脂将半导体芯片密封,将该密封树脂后固化。
然后,进行丝焊工序。由此,用焊线7将半导体芯片5及另一半导体芯片15中各自的电极焊盘与被粘物6电连接。另外,本工序可以在不经过芯片接合薄膜3a、13的加热工序的情况下实施。
接着,利用密封树脂8进行将半导体芯片5等密封的密封工序,并使密封树脂固化。与此同时,在未进行热固化的情况下,通过芯片接合薄膜3a的热固化将被粘物6与半导体芯片5之间胶粘固定。另外,通过芯片接合薄膜13的热固化也将半导体芯片5与另一个半导体芯片15之间胶粘固定。另外,密封工序后,可以进行后固化工序。
即使在半导体芯片的三维安装的情况下,由于不进行芯片接合薄膜3a、13的利用加热的加热处理,因此可以简化制造工序并且提高成品率。另外,被粘物6不发生翘曲,或者半导体芯片5及另一个半导体芯片15不产生裂纹,因此能够实现半导体元件的进一步薄型化。
另外,可以如图5所示进行通过芯片接合薄膜在半导体芯片间层叠垫片的三维安装。图5是表示隔着隔片利用芯片接合薄膜三维安装两个半导体芯片的例子的示意剖视图。
图5所示的三维安装的情况下,首先,在被粘物6上依次层叠芯片接合薄膜3a、半导体芯片5和芯片接合薄膜21并进行芯片接合。进而,在芯片接合薄膜21上,依次层叠垫片9、芯片接合薄膜21、芯片接合薄膜3a和半导体芯片5并进行芯片接合。之后,通过对芯片接合薄膜3a、21进行加热使其热固化而胶粘固定,提高耐热强度。作为加热条件,与所述同样,优选温度在80℃~200℃的范围内,并且加热时间在0.1小时~24小时的范围内。
另外,本发明中可以不使芯片接合薄膜3a、21热固化而仅仅进行芯片接合。之后,也可以不经加热工序进行丝焊,再用密封树脂将半导体芯片密封,将该密封树脂后固化。
然后,如图5所示,进行丝焊工序。由此,用焊线7将半导体芯片5中的电极焊盘与被粘物6电连接。另外,本工序可以在不经过芯片接合薄膜3a、21的加热工序的情况下实施。
接着,利用密封树脂8进行将半导体芯片5密封的密封工序,并使密封树脂固化,与此同时,在芯片接合薄膜3a、21未热固化的情况下,将它们热固化,由此,将被粘物6与半导体芯片5之间以及半导体芯片5与垫片9之间胶粘固定。由此,得到半导体封装。密封工序优选仅将半导体芯片5一侧单面密封的统一密封法(一括封止法)。密封是为了保护粘贴在粘合片上的半导体芯片5而进行的,其代表方法是使用密封树脂8在模具中成形。此时,一般使用包含具有多个模腔的上模和下模的模具,同时进行密封工序。树脂密封时的加热温度例如优选在170℃~180℃的范围内。密封工序后,可以进行后固化工序。
另外,作为所述垫片9没有特别限制,例如,可以使用现有公知的硅芯片、聚酰亚胺薄膜等。另外,所述垫片可以使用芯材。作为芯材没有特别限制,可以使用现有公知的芯材。具体而言,可以使用薄膜(例如,聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、镜面硅晶片、硅衬底或玻璃被粘物等。
(其它事项)
将半导体元件在所述被粘物上进行三维安装的情况下,在半导体元件的形成电路的面一侧形成缓冲涂膜。作为该缓冲涂膜,可以列举例如:氮化硅膜或包含聚酰亚胺树脂等耐热树脂的膜。
另外,半导体元件的三维安装时,各阶段中使用的芯片接合薄膜不限于由相同组成构成的芯片接合薄膜,可以根据制造条件、用途等适当变更。
另外,所述实施方式中,对于在将多个半导体元件层叠到被粘物上后统一地进行丝焊工序的方式进行了说明,但是,本发明不限于此。例如,也可以在每当将半导体元件层叠到被粘物上时进行丝焊工序。
实施例
以下,例示本发明的优选实施例进行详细说明,但是,该实施例中记载的材料或配合量等只要没有特别限定的记载,则无意将本发明的范围仅限于此,其仅仅是说明例。另外,出现“份”的地方是指“重量份”。
(实施例1)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量80万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)6.25份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)12.5份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)54份溶解于甲乙酮中,得到浓度20.7重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜A。
(实施例2)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量80万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)12.5份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)12.5份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)83份溶解于甲乙酮中,得到浓度21.5重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜B。
(实施例3)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量80万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)7份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)7份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)85份溶解于甲乙酮中,得到浓度20.5重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜C。
(实施例4)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量40万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)85份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)47份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)232份溶解于甲乙酮中,得到浓度21.0重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜D。
(实施例5)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量40万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)43份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)23份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)588份溶解于甲乙酮中,得到浓度21.0重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜D。
(比较例1)
在本比较例1中,除了将球形二氧化硅的含量变更为1125份以外,与实施例1同样操作,得到本比较例1的热固型芯片接合薄膜D。
(比较例2)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(根上工業株式会社制、パラクロンW-197CM、重均分子量40万),将环氧树脂1(JER株式会社制,Epicoat 1004,重均分子量1400)250份、环氧树脂2(JER株式会社制,Epicoat 827,重均分子量370)250份、酚醛树脂(三井化学株式会社制、レミツクスXLC-4L,重均分子量1385)500份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)667份溶解于甲乙酮中,得到浓度21.4重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜E。
(比较例3)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量40万),将环氧树脂(JER株式会社制,Epicoat 834,重均分子量470)3.3份、酚醛树脂(荒川化学株式会社制,タマノル100S,重均分子量900)1.9份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)45份溶解于甲乙酮中,得到浓度20.9重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜G。
(比较例4)
相对于100份以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的作为丙烯酸酯类共聚物的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制、テイサンレジンSG-708-6、重均分子量40万),将环氧树脂(JER株式会社制,Epicoat 828,重均分子量370)300份、酚醛树脂(明和化成株式会社制、MEH-7500-3S,重均分子量500)165份、平均粒径500nm的球形二氧化硅(アドマテツクス株式会社制,SO-25R)253份溶解于甲乙酮中,得到浓度20.9重量%的胶粘剂组合物。
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度50μm的聚对苯二甲酸乙二醇酯薄膜制成的脱模处理薄膜(剥离衬垫)上,然后在130℃干燥2分钟。由此,制作厚度40μm的热固型芯片接合薄膜G。
(重均分子量的测定方法)
丙烯酸类共聚物的重均分子量,是使用凝胶渗透色谱法得到的聚苯乙烯换算值。凝胶渗透色谱法中,将TSK G2000H HR、G3000H HR、G4000H HR、及GMH-H HR这4根柱(均为东曹株式会社制)串联使用,使用四氢呋喃作为洗脱液,在流速1ml/分钟、温度40℃、试样浓度0.1重量%四氢呋喃溶液、试样注入量500μl的条件下进行,检测器使用差示折光计。
(80℃、140℃、175℃下的储能模量的测定)
用切刀从各实施例和比较例的热固型芯片接合薄膜上切出厚200μm、长度25mm(测定长度)、宽10mm的条状,使用固态粘弹性测定装置(RSA III、レオメトリツクサイエンテイフイツク株式会社制),测定-50℃~300℃下的储能模量。测定条件是:频率1Hz、升温速度10℃/分钟。将80℃、140℃、175℃下的储能模量E1’、E2’和E3’的值列在下表1中。
(玻璃化转变温度(Tg)的测定)
各实施例和比较例的热固型芯片接合薄膜的玻璃化转变点,首先,与所述储能模量的情况同样地测定储能模量。另外,测定损耗模量,然后,通过计算tanδ(G”(损耗模量)/G’(储能模量))的值求出玻璃化转变温度。结果如下表1所示。
(室温下的剪切胶粘力的测定)
对于所述实施例和比较例中制作的热固型芯片接合薄膜,如下所述测定对半导体元件的剪切胶粘力。
首先,将各热固型芯片接合薄膜在粘贴温度40℃下粘贴到半导体芯片(长10mm×宽10mm×厚0.5mm)上。然后,在芯片接合温度120℃、芯片接合压力0.1MPa、芯片接合时间1秒的条件下芯片粘贴到BGA衬底上。然后,使用接合检验仪(ボンドテスタ一)(デイジ社制、dagy4000),分别测定室温下的剪切胶粘力。结果如下表1所示。
(175℃下的剪切胶粘力的测定)
对于所述实施例和比较例中制作的热固型芯片接合薄膜,如下所述测定对半导体元件的剪切胶粘力。
与所述室温下的剪切胶粘力的测定的情况同样地通过各实施例和比较例的热固型芯片接合薄膜将半导体芯片(长10mm×宽10mm×厚0.5mm)芯片粘贴到BGA衬底上。然后,使用接合检验仪(ボンドテスタ一)(デイジ社制、dagy4000),分别测定175℃下的剪切胶粘力。结果如下表1所示。
(丝焊性的测定)
对使用所述实施例和比较例中制作的热固型芯片接合薄膜,在芯片接合到BGA衬底上的镜面芯片进行丝焊时的丝焊性进行评价。
首先,将表面上蒸镀Al的硅晶片切割,制作10mm见方的镜面芯片。通过热固型芯片接合薄膜将该镜面芯片芯片接合到BGA衬底上。芯片接合在温度120℃、0.1MPa、1秒的条件下,使用芯片接合机(株式会社新川制SPA-300)进行。
然后,使用丝焊装置(ASM公司制,商品名:Eagle60),用直径25μm的Au焊线对镜面芯片的每一边分别进行50次丝焊。丝焊条件是:超声波输出时间2.5毫秒、超声波输出功率0.75W、接合负荷60g、平台温度175℃。丝焊性的评价通过确认有无镜面芯片的位置偏移以及有无产生芯片破裂来进行。将没有产生位置偏移和芯片破裂的情况评价为○,将产生位置偏移和芯片破裂的情况评价为×。
(成形性的评价)
与所述剪切胶粘力的测定的情况同样地通过各实施例和比较例的热固型芯片接合薄膜将半导体芯片(长10mm×宽10mm×厚0.5mm)芯片粘贴到BGA衬底上。然后,使用成形机(TOWAプレス公司制、マニユアルプレスY-1),在成形温度175℃、合模压力184kN、压铸压力5kN、时间120秒、密封树脂GE-100(日东电工株式会社制)的条件下进行密封工序。
然后,使用超声波图像装置(日立フアインテツク社製、FS200II)观察固定在BGA衬底上的半导体芯片的状态。结果如表1所示。另外,表1中,将没有因半导体芯片的位置偏移或剥离而产生的翘起的情况评价为○,将确认到任意一个的情况评价为×。
(结果)
从下表1的结果可以看出,为实施例1~5的热固型芯片接合薄膜时,芯片接合后的半导体芯片在运送中不从BGA衬底上脱落。另外,进行丝焊工序时,相对BGA衬底没有因剪切变形而产生位置偏移,也未产生芯片破裂,结果,也提高了丝焊工序时的成品率。另外,密封树脂的密封时没有产生半导体芯片被该密封树脂冲走的情况。由此,确认本实施例的热固型芯片接合薄膜兼具半导体装置制造所需的储能模量和高胶粘力。
标号说明
1 基材
2 粘合剂层
3、3’、13、21热固型芯片接合薄膜
4 半导体晶片
5 半导体芯片
6 被粘物
7 焊线
8 密封树脂
9 垫片
10、11 切割/芯片接合薄膜
15 半导体芯片
16 贴片环
Claims (10)
1.一种热固型芯片接合薄膜,在半导体装置的制造时使用,其中,
至少含有环氧树脂、酚醛树脂、丙烯酸类共聚物及填料,
80℃~140℃下的热固化前的储能模量在10kPa~10MPa的范围内,
175℃下的热固化前的储能模量在0.1MPa~3MPa的范围内。
2.如权利要求1所述的热固型芯片接合薄膜,其中,
设所述环氧树脂和酚醛树脂的合计重量为X重量份、丙烯酸类共聚物的重量为Y重量份时,比率X/Y为0.11~4。
3.如权利要求1或2所述的热固型芯片接合薄膜,其中,
设所述环氧树脂、酚醛树脂和丙烯酸类共聚物的合计重量为A重量份、填料的重量为B重量份时,B/(A+B)为0.8以下。
4.如权利要求1至3中任一项所述的热固型芯片接合薄膜,其中,
所述环氧树脂为具有芳香环的环氧树脂,
所述酚醛树脂为苯酚酚醛清漆树脂、苯酚联苯树脂或苯酚芳烷基树脂中的至少任意一种,
所述丙烯酸类共聚物为含羧基丙烯酸类共聚物或含环氧基丙烯酸类共聚物中的至少任意一种。
5.如权利要求1至4中任一项所述的热固型芯片接合薄膜,其中,
所述填料的平均粒径在0.005μm~10μm的范围内。
6.如权利要求1至5中任一项所述的热固型芯片接合薄膜,其中,
所述环氧树脂的重均分子量在300~1500的范围内。
7.如权利要求1至6中任一项所述的热固型芯片接合薄膜,其中,
所述酚醛树脂的重均分子量在300~1500的范围内。
8.如权利要求1至7中任一项所述的热固型芯片接合薄膜,其中,
所述丙烯酸类共聚物的重均分子量在10万~100万的范围内。
9.如权利要求1至8中任一项所述的热固型芯片接合薄膜,其中,
玻璃化转变温度在10℃以上且50℃以下的范围内。
10.一种切割/芯片接合薄膜,其具有在切割薄膜上层叠有权利要求1至9中任一项所述的热固型芯片接合薄膜的结构。
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- 2009-12-18 JP JP2009288001A patent/JP2010171402A/ja active Pending
- 2009-12-22 WO PCT/JP2009/071292 patent/WO2010074060A1/ja active Application Filing
- 2009-12-22 CN CN200980152612XA patent/CN102265388A/zh active Pending
- 2009-12-22 KR KR20117014623A patent/KR20110099116A/ko not_active Application Discontinuation
- 2009-12-22 US US13/141,765 patent/US20120153508A1/en not_active Abandoned
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CN110945634A (zh) * | 2017-07-20 | 2020-03-31 | 日立化成株式会社 | 散热性芯片接合膜及切割-芯片接合膜 |
CN110945634B (zh) * | 2017-07-20 | 2023-08-29 | 株式会社力森诺科 | 散热性芯片接合膜及切割-芯片接合膜 |
CN110527444A (zh) * | 2018-05-24 | 2019-12-03 | 日东电工株式会社 | 切割芯片接合薄膜以及半导体装置制造方法 |
CN113717646A (zh) * | 2020-05-26 | 2021-11-30 | 日东电工株式会社 | 芯片接合薄膜及切割芯片接合薄膜 |
WO2024066254A1 (zh) * | 2022-09-27 | 2024-04-04 | 武汉市三选科技有限公司 | 低模量垂直堆叠封装用薄膜黏晶胶、其制备方法及应用 |
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WO2010074060A1 (ja) | 2010-07-01 |
TWI538976B (zh) | 2016-06-21 |
JP2010171402A (ja) | 2010-08-05 |
KR20110099116A (ko) | 2011-09-06 |
TW201439273A (zh) | 2014-10-16 |
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US20120153508A1 (en) | 2012-06-21 |
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