CN102832117B - 用于形成多结光生伏打结构的剥离方法和光生伏打器件 - Google Patents

用于形成多结光生伏打结构的剥离方法和光生伏打器件 Download PDF

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CN102832117B
CN102832117B CN201210195820.1A CN201210195820A CN102832117B CN 102832117 B CN102832117 B CN 102832117B CN 201210195820 A CN201210195820 A CN 201210195820A CN 102832117 B CN102832117 B CN 102832117B
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germanium
layer
stress
tin alloy
alloy layers
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CN102832117A (zh
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S·W·贝德尔
D·A·萨达纳
D·沙杰迪
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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Abstract

本发明公开涉及用于形成多结光生伏打结构的剥离方法和光生伏打器件。具体地，提供了一种包括设置具有锗和锡合金层的锗基板的切割半导体材料的方法。应力体层被沉积于锗基板的表面上。来自应力体层的应力被施加到锗基板，其中，应力切割锗基板以提供切割表面。然后对于锗基板的锗和锡合金层选择锗基板的切割表面。在另一实施例中，锗和锡合金层可用作剥离方法中的断裂面。

Description

用于形成多结光生伏打结构的剥离方法和光生伏打器件
技术领域
本公开涉及光生伏打器件制造，并且尤其是，涉及用于控制通过利用剥离(spalling)从基板去除表面层的方法。
背景技术
光生伏打器件是将入射光子的能量转换成电动势（e.f.m.）的器件。典型的光生伏打器件包括被配置为将来自太阳的电磁辐射中的能量转换成电能的太阳能电池。包含化合物半导体的多结太阳能电池由于其高的效率和辐射稳定性因而可被用于空间中的发电。由于锗（Ge）的固有强（IR）的吸收性能，因此，主要在锗（Ge）基板上制造多结太阳能电池。锗（Ge）还包含可与III-V化合物半导体晶格匹配的晶体结构，这允许在锗（Ge）基板上集成III-V子电池。锗（Ge）基板会构成最终的太阳能电池的最终成本的近50%～70%。
在光生伏打工业中存在在使能量转换效率最大化的同时不断使用于制造太阳能电池的半导体材料的量最小化的趋势。与半导体材料的制造相关的高成本使给定光生伏打技术的以每瓦为度量的成本劣化。并且，可以认为，在器件水平上，无助于能量转换的昂贵的半导体材料是一种浪费。
发明内容
在一个实施例中，本公开提供了一种切割(cleave)诸如锗基板的半导体材料以提供光生伏电池的至少一个部件的方法。在一个实施例中，所述切割半导体材料的方法包括设置锗基板，其中，锗和锡合金层存在于锗基板内。可在存在于锗基板上的表面上沉积应力体层。来自应力体层的应力可被施加到锗基板，其中，应力切割锗基板以提供切割表面。锗和锡合金层存在于锗基板的上面形成有应力体层的表面与锗基板的切割表面之间。然后，可对于锗基板的锗和锡合金层选择性地进行锗基板的切割表面的蚀刻。在一些实施例中，上述的方法使用锗和锡合金层作为去除切割表面的蚀刻终止(etch stop)，并且去除源自切割表面的锗基板中的厚度变化。
在另一实施例中，提供一种包括设置锗基板的切割半导体材料的方法，其中，锗和锡合金层存在于锗基板内。锗锡合金层可被弱化。可在存在于锗基板上的表面上沉积应力体层。来自应力体层的应力被施加到锗基板，其中，应力沿锗和锡合金层切割锗基板。在一些实施例中，上述的方法使用锗和锡合金层作为切割层以表示可以剥离锗基板的深度。
在另一方面，提供一种光生伏打器件，该光生伏打器件包括：具有第一导电性和1微米～10微米的厚度的锗层，其中，锗层在第一锗层的整个宽度上具有小于的厚度变化。半导体上存在于锗层上，其中，半导体层具有与第一导电性相反的第二导电性。
附图说明
结合附图将最好地理解以下的详细描述，其作为例子被给出而不是要将公开仅限于此，其中，类似的附图标记表示类似的要素和部分，其中：
图1是示出根据本公开的在形成光生伏打器件的方法的一个实施例中使用的包含存在于其中的锗和锡合金层的锗基板的侧面断面图。
图2A是示出根据本公开的一个实施例的直接向锗基板的表面沉积应力体层的侧面断面图。
图2B是示出根据本公开的一个实施例的在沉积应力体层之前在锗基板上沉积钝化层(passivation layer)、后表面场层、隧道层和/或III-V太阳能电池中的至少一个的侧面断面图。
图3A和图3B是示出根据本公开的一个实施例的从应力体层向锗基板施加应力的侧面断面图，其中，应力切割锗基板以提供切割表面。
图4A和图4B是示出根据本公开的一个实施例的对于锗和锡合金层10选择性地进行锗基板的切割表面的蚀刻的侧面断面图。
图5A和图5B是示出根据本公开的一个实施例的去除锗和锡合金层的侧面断面图。
图6A和图6B是示出根据本公开的一个实施例的在从应力体层向锗基板施加应力之前弱化锗和锡合金层的侧面断面图，其中，在本实施例中，锗和锡合金层提供断裂面。
图7A和图7B是示出根据本公开的一个实施例的从应力体层向在图6A和图6B中示出的锗基板施加应力的侧面断面图，其中，应力沿锗和锡合金层切割锗基板。
图8A和图8B是示出根据本公开的一个实施例的从图7A和图7B所示的结构去除锗和锡合金层的剩余部分的侧面断面图。
图9A和图9B是示出根据本公开的一个实施例的在源自图1～8B中示出的方法序列的锗基板的剩余部分上形成光生伏打器件的侧面断面图。
具体实施方式
这里公开了要求权利的结构和方法的详细实施例；但是，应当理解，公开的实施例仅是为了解释可以以各种形式体现的要求权利的结构和方法。另外，结合各种实施例给出的例子中的每一个意图是解释性的，而不是限制性的。此外，附图未必按比例，一些特征可被夸大以表示特定部件的细节。因此，这里公开的特定的结构和功能细节不被解释为限制，而仅被解释为教导本领域技术人员以使其以各种方式使用本公开的方法和结构的代表性基础。
说明书中提到“一个实施例”、“实施例”、“示例性实施例”等表示：所描述的实施例可包含特定的特征、结构或特性，但每个实施例可能未必包含该特定的特征、结构或特性。此外，这些短语未必指的是同一实施例。并且，当结合某一实施例描述特定的特征、结构或特性时，都认为它在本领域技术人员结合其它实施例实现这些特征、结构或特性的知识内，而不管是否被明确描述。
出于以下的描述的目的，由于术语“上”、“下”、“右”、“左”、“垂直”、“水平”、“顶部”、“底部”和它们的派生词是附图中的取向，因此它们应与本发明有关。术语“在…上”、“重叠”、“在…顶上”、“位于…上”或“位于…顶上”意味着诸如第一结构的第一要素存在于诸如第二结构的第二要素上，其中，可在第一要素和第二要素之间存在诸如界面结构的居间要素，例如，界面层。术语“直接在…上”、“直接接触”意味着诸如第一结构的第一要素和诸如第二结构的第二要素在两个要素的界面上没有任何中间的导电、绝缘或半导体层的情况下被连接。
本公开涉及在光生伏打器件的制造中使用剥离方法，其中，为了进一步控制裂纹起始、裂纹扩展以及增加诸如锗（Ge）基板的半导体层中的剥离深度的选择性，所公开的剥离方法在锗基板内引入锡和锗的合金层。如这里使用的那样，“光生伏打器件”是当暴露于诸如光的辐射时产生自由电子和/或电子空洞（即，空穴）并导致电流的产生的器件，诸如太阳能电池。光生伏打器件一般包含共享界面以提供异质结的p型导电性和n型导电性的各层。
用于光生伏打器件应用的更有效的材料中的一种是诸如砷化镓（GaAs）的III-V化合物半导体材料。通过层叠化合物半导体薄层以提供不同成分（和带隙）的PN结，可使得可由光生伏打器件捕获太阳能光谱的更宽部分，这导致更高的效率。可使用锗作为上面生长诸如III-V化合物半导体的化合物半导体层的基板。锗一般用作光生伏打器件的最底结，并且，由于其小的带隙，因此捕获太阳能光谱的更长波长部分。
锗单晶基板制造起来是能量密集的，并且是昂贵的。一旦在锗基板上形成了光生伏打电池的一部分，锗基板的被处理以提供光生伏打电池的部分就可被转印到便宜的基板上，其中，可随后在另一光生伏打电池的形成中使用锗基板的没有被处理的部分。剥离是一种用于切割锗基板的方法。剥离包含沉积可通过断裂来切割锗基板的沉积于锗基板的表面上的应力引起层。但是，已经确定，通过剥离在多结光生伏打器件的形成中从锗基板转印锗层不利地导致转印的锗层的厚度变化。例如，包含锗的基板的转印部分的厚度变化可以为几微米的量级。由于为了得到最佳效率由每个电池产生的电流应相同，因此锗基板的转印部分的厚度变化不利地影响提供光生伏打器件的整个多结叠层(multi-junction stack)的电流匹配。电流将随着残留锗层厚度改变，电池的总效率将类似地改变。本公开提供包括具有可控制并且均匀的厚度的锗层（即，锗基板的转印部分）的多结光生伏打器件结构的制造方法。更特别地，并且，在一个实施例中，这里公开的方法使用锗和锡合金层，即二元GsSn合金层或硅、锗和锡合金层即三元SiGeSn合金层，以限定残留锗层（锗基板的转印部分）的最终厚度。
图1～5B示出本公开的一个实施例，其中使用锗和锡合金层和/或硅锗和锡的层作为蚀刻终止以限定剥离之后的残留锗厚度。图1示出包含锗和锡合金层10的锗基板1。在一个实施例中，锗基板1可包含从底部到顶部包含第一锗层5、存在于第一锗层5上的锗和锡合金层10和存在于锗和锡合金层10上的第二锗层15的材料叠层。
在一个实施例中，第一锗层5可具有大于95原子%（即，at.%）的锗含量。在另一实施例中，第一锗层5可具有大于99at.%的锗含量。在一个示例中，第一锗层5可具有为100at.%的锗含量。可通过使用单晶（单晶体）方法形成第一锗层5。用于形成提供锗基板的第一锗层5的单晶方法的一个例子是Czochralski（CZ）方法。Czochralski（CZ）方法包括取得单晶锗的晶种并使其与熔融的锗的顶面接触。随着晶种缓慢地上升（或被提拉），熔融的锗的原子以晶种的模式凝固并且扩展单晶结构。单晶结构然后被锯成可提供第一锗层5的晶片，即基板。
第一锗层5可被掺杂成n型或p型导电性，并且可以为本征半导体层。“本征半导体层”是基本上纯的半导体材料层，即没有掺杂n型或p型掺杂剂的本征半导体层。如这里使用的那样，“p型”指的是向本征半导体添加产生价电子空缺（即空穴）的杂质。如这里使用的那样，“n型”指的是向本征半导体添加有助于自由电子的杂质。第一锗层5的厚度可以为50μm～10cm。在另一实施例中，第一锗层5的厚度可以为80μm～1mm。
注意，第一锗层5的以上厚度仅出于解释的目的被提供，并且，不是要限制本公开，例如，只要第一锗层5的厚度使得第一锗层5的至少残留部分在剥离之后残留使得在第一锗层5的切割表面与随后形成的第二锗层15之间存在随后形成的锗和锡合金层10，就可使用第一锗层5的其它厚度。
提供蚀刻终止层并且可包含光生伏打器件的底部电池的一部分的锗和锡合金层10可以是直接沉积于第一锗层5的表面上的外延形成层。术语“外延形成”、“外延生长”和/或“外延沉积”意味着在半导体材料的沉积表面上生长半导体材料，其中，生长的半导体材料具有与沉积表面的半导体材料相同的结晶特性。因此，在第一锗层5具有单晶晶体结构的实施例中，外延生长的锗和锡合金层10也具有单晶晶体结构。并且，在第一锗层5具有多晶结构的实施例中，外延生长的锗和锡合金层10也具有多晶结构。
锗和锡合金层10可由0.5at.%～20at.%的锡和余量的锗组成。在另一实施例中，锗和锡合金层10可由5at.%～20at.%的锡和80at.%～95at.%的锗组成。在另一实施例中，锗和锡合金层10可由10at.%～15at.%的锡和85at.%～90at.%的锗组成。注意，以上的浓度仅出于解释性的目的被提供，并且不是要限制本公开。例如，只要锡的浓度足够大使得可对于锗和锡合金层10选择性地进行第一锗层5的蚀刻，就可使用锡的其它浓度。
在另一实施例中，锗和锡合金层10还可包含硅，其中，硅被引入以抵消由锡引入的应力。更具体地，锡增加外延生长的锗和锡合金层10的晶格尺寸，使得它比第一锗层5的晶格尺寸大。因此，随着锗和锡合金层10中的锡浓度的增加，存在于锗和锡合金层10中的压缩应力增加。在锗和锡合金层10中引入应力会导致缺陷形成。为了减少压缩应变(compressive strain)，可向锗和锡合金层10引入硅以减小外延生长的锗和锡合金层10的晶格尺寸。更具体地，在一个实施例中，锗和锡合金层10可由0.5at.%～20at.%的锡、少于50at.%的硅和余量的锗组成。在另一实施例中，锗和锡合金层10可由分别为0at.%～10at.%的锡、0at.%～38at.%的硅和100at.%～52at.%的锗组成。如果Si:Sn的摩尔比在Ge（SiSn）合金中为约3.8，那么晶格参数将与块状Ge(bulk Ge)相同。因此，可在Ge基板上无应变地生长这些合金。
注意，锗和锡合金层10的以上成分仅出于解释的目的被提供，并且不是要限制本公开。例如，只要锡的浓度足够大使得可对于锗和锡合金层10选择性地进行第一锗层5的材料的蚀刻，就可使用锡的其它浓度。
在一个实施例中，可通过使用分子束外延（MBE）沉积来沉积锗和锡合金层10。例如，用于锗和锡合金层10的MBE沉积的锡和锗源可包含锡和锗的固体源材料。在锗和锡合金层10还包含硅的实施例中，用于锗和锡合金层的MBE沉积的源可包含锡、锗和硅的固体源材料。
在10-8Pa的量级的真空中进行分子束外延（MBE）。在固体源MBE中，诸如锡、锗和硅（任选）的固体源材料在单独的准渗出(quasi-effusion)电池中被加热，直到它们开始缓慢升华。气体元素然后在沉积表面，即第一锗层5，上凝结，在这里它们可相互反应。术语“束”表示：由于原子的长的平均自由程，因此蒸发原子在到达沉积表面之前不相互或与真空室气体交互作用。
在另一实施例中，可通过使用化学气相沉积来沉积锗和锡合金层10。化学气相沉积（CVD）是作为气体反应物与室温或更高温度下的基板表面之间的化学反应的结果而形成沉积物质从而导致在基板表面上沉积膜的沉积过程。CVD处理的变化包括但不限于大气压力CVD（APCVD）、低压力CVD（LPCVD）、等离子增强CVD（PECVD）、金属有机CVD（MOCVD）、超高真空CVD（UHV-CVD）和它们的组合。用于沉积含有锗的硅层3的处理的其它例子包括原子层沉积（ALD）、蒸镀、化学溶液沉积和其它类型的沉积处理。
可通过CVD对于锗和锡合金层10的沉积使用大量的不同源。在一些实施例中，用于通过CVD外延生长锗和锡合金层10的源气体包含诸如锗烷(germane)气体（GeH4）的锗源气体和诸如锡烷（SnH4）、Stannane-d4（SnD4）或它们的组合的锡源气体。在除了锗和锡以外锗和锡合金层10包括硅的实施例中，用于沉积锗和锡合金层10的源气体包含诸如锗烷气体（GeH4）的锗源气体、诸如锡烷（SnH4）、Stannane-d4（SnD4）或它们的组合的锡源气体和诸如四氯化硅、二氯甲硅烷（SiH2Cl2）、硅烷（SiH4）和诸如乙硅烷（Si2H6）和丙硅烷（Si3H8）的高次硅烷的硅源气体。用于外延沉积的温度一般为300℃～800℃。尽管由于Sn在Ge或GeSi晶格中的低溶度因此低温生长一般是有利的。
锗和锡合金层10可被掺杂为n型或p型导电性，或者可以是本征半导体层。提供锗和锡合金层10的导电类型的掺杂剂可被原位沉积。术语“导电类型”表示p型或n型掺杂剂。“原位”意味着在正在形成或沉积材料层时引入提供材料层的导电类型的掺杂剂。在一个实施例中，当锗和锡合金层10被掺杂成p型导电性时，在CVD处理中使用的源气体还可包含p型掺杂剂源。例如，乙硼烷（B2H6）气体可与用于锡、锗和任选的硅的源气体同时地被引入到处理室中。在一个实施例中，当锗和锡合金层被掺杂为n型导电性时，在CVD处理中使用的源气体还可包含n型掺杂剂源。例如，可以与锡、锗和任选的硅的源气体同时地将磷化氢（PH3）气体或砷化三氢（AsH3）气体引入到处理室内。
也可通过使用等离子掺杂、离子注入和/或从一次性扩散源（例如，硼硅酸盐玻璃）的向外扩散中的至少一种，在锗和锡合金层10的沉积之后引入用于锗和锡合金层10的p型和/或n型掺杂剂。
锗和锡合金层10的厚度可以为1nm～500nm。在另一实施例中，锗和锡合金层10的厚度可以为5nm～50nm。注意，锗和锡合金层10的以上厚度仅出于解释的目的被提供，并且，不是要限制本公开。例如，只要锗和锡合金层10的厚度足够大使得锗和锡合金层10可在用于在切割表面4的蚀刻之后去除第一锗层5的剩余部分的蚀刻处理中用作蚀刻终止，就可使用锗和锡合金层10的其它厚度。
当被用于光生伏打器件的下部电池中并被掺杂为p型导电性时，锗和锡合金层10中的p型掺杂剂的浓度为5×1017原子/cm3～5×1020原子/cm3。当被用于光生伏打器件的下部电池中并被掺杂成n型导电性时，锗和锡合金层10中的n型掺杂剂的浓度为5×1017原子/cm3～1×1020原子/cm3。
仍然参照图1，并且，在一个实施例中，在锗基板1的锗和锡合金层10上存在第二锗层15。在一个实施例中，第二锗层15可具有大于95at.%的锗含量。在另一实施例中，第二锗层15可具有比99at.%大的锗含量。在一个例子中，第二锗层15可具有100%的锗含量。可通过使用诸如CVD的沉积处理在锗和锡合金层10上沉积第二锗层15。在一个实施例中，用于形成第二锗层15的CVD处理选自包括大气压力CVD（APCVD）、低压力CVD（LPCVD）、等离子增强CVD（PECVD）、金属有机CVD（MOCVD）、超高真空CVD（UHV-CVD）和它们的组合的组。在一个实施例中，第二锗层15可以是外延沉积层，其中外延沉积处理的锗源包含锗烷（GeH4）气体。还可设想，第二锗层15还可包含Sn和Si以提高光生伏打器件的性能（例如，与纯Ge相比，增加更长波长上的吸收）。
与锗和锡合金层10类似，第二锗层15可被掺杂成p型导电性或n型导电性。可在提供第二锗层15的形成处理中原位引入提供第二锗层15的导电类型的掺杂剂，或者可在沉积第二锗层15之后通过使用离子注入或等离子掺杂引入提供第二锗层15的导电类型的掺杂剂。第二锗层15的厚度可以为100nm～15μm。在另一实施例中，第二锗层15的厚度可以为500nm～10μm。在一些实施例中，第二锗层15可用作光生伏打器件的底部电池的部件。
图2A示出直接在锗基板1的表面上（例如，直接在第二锗层15的表面上）沉积应力体层20的一个实施例。图2B示出在存在于锗基板1上（例如，存在于第二锗层15上）的后表面材料层14上沉积应力体层20的一个实施例。后表面材料层14可以是单材料层或多层材料层。在一个实施例中，提供锗基板1的表面的后表面材料层14可以是后表面场层、钝化层、隧道层、后太阳能电池结或它们的组合中的至少一个。可通过后表面场层、钝化层、隧道层和后太阳能电池的任意组合提供后表面材料层14。
参照图2B，可通过在第二锗层15的表面上形成的后表面场区域提供后表面材料层14。“后表面场（BSF）区域”是具有比第二锗层15高的掺杂剂浓度的掺杂区域。后表面场区域和第二锗层15一般具有相同的导电类型，例如，p型或n型导电性。高度掺杂的后表面场（BSF）区域与具有比后表面场（BSF）区域低的掺杂剂浓度的第二锗层15之间的界面的行为类似于p-n结，并且，在对于少数载流子向后表面的流动引入势垒的界面处形成电场。少数载流子浓度由此在第二锗层15中保持在更高的水平上，并且，后表面场（BSF）区域具有钝化太阳能电池的后表面的净效果。
仍然参照图2B，后表面材料层14也可包含可存在于第二锗层15的后表面场区域上的钝化层。在另一实施例中，可以省略后表面材料层，其中，后表面材料层14是由钝化层提供的单材料层。钝化层是在提供随后形成的光生伏打器件的下部电池的第二锗层15的后表面上形成的材料层，其中，钝化层降低光生伏打器件的底部电池的后表面上的悬空键(dangling bond)的浓度。在一个实施例中，钝化层由氢化非晶硅（a-Si:H）组成。一般地，氢化非晶硅是本征半导体层。通过PECVD沉积包含氢化非晶硅的材料包括至少一种含有半导体材料的反应剂气体和至少一种含氢反应剂气体。在一个实施例中，用于产生含有氢化非晶硅的材料的包含半导体材料的反应剂气体包含至少一个硅原子。例如，为了提供氢化非晶硅的硅成分，包含半导体材料的反应剂气体可包含SiH4、Si2H6、SiH2Cl2、SiHCl3和SiCl4中的至少一种。用于通过PECVD沉积含有氢化非晶硅的材料的含氢反应剂气体可以是氢气（H2）。
仍然参照图2B，后表面材料层14还可包含可在钝化层上形成的后太阳能电池结。在另一实施例中，可以省略后表面场层和钝化层，其中，可通过在第二锗层15的露出表面上形成的至少一个后太阳能电池结提供后表面材料层14。后太阳能电池结可由任意数量的p/n结组成，并且可由任意数量的材料组成。在一个实施例中，提供后太阳能电池结的材料层可以是化合物半导体材料。适于后太阳能电池结的化合物半导体材料的例子包括但不限于锑化铝（AlSb）、砷化铝（AlAs）、氮化铝（AlN）、磷化铝（AlP）、氮化硼（BN）、磷化硼（BP）、砷化硼（BAs）、砷化镓（GaAs）、磷化镓（GaP）、锑化铟（InSb）、砷化铟（InAs）、氮化铟（InN）、磷化铟（InP）、砷化铝镓（AlGaAs）、磷化铟镓（InGaP）、砷化铝铟（AlInAs）、锑化铝铟（AlInSb）、氮化镓砷（GaAsN）、锑化镓砷（GaAsSb）、氮化铝镓（AlGaN）、磷化铝镓（AlGaP）、氮化铟镓（InGaN）、锑化铟砷（InAsSb）、锑化铟镓（InGaSb）、磷化铝镓铟（AlGaInP）、磷化铝镓砷（AlGaAsP）、磷化铟镓砷（InGaAsP）、磷化铟砷锑（InArSbP）、磷化铝铟砷（AlInAsP）、氮化铝镓砷（AlGaAsN）、氮化铟镓砷（InGaAsN）、氮化铟铝砷（InAlAsN）、氮化镓砷锑（GaAsSbN）、氮化砷化锑化镓铟（gallium indium nitride arsenide aluminum antimonide，GaInNAsSb）、砷化锑化磷化镓铟（gallium indium arsenideantimonide phosphide，GaInAsSbP）和它们的组合。
如上所述，并且，如图2A和图2B所示，可如图2A所示的那样直接在锗基板1的表面上或者可如图2B所示的那样在存在于锗基板1上的后表面材料层14上沉积应力体层20。在一个实施例中，应力体层20由含有金属的层、聚合物层、粘接带或它们的组合组成。在本公开的一些实施例中，可在进一步的处理之前清洗上面沉积有应力体层20的表面，以从中去除表面氧化物和/或其它的污染物。在本公开的一个实施例中，可通过施加诸如例如丙酮和异丙醇的溶剂，清洗上面沉积有应力体层20的表面。
在一个实施例中，在形成应力体层20之前，如图2A所示的那样在锗基板1的表面上或者如2B所示的那样在后表面材料层14的表面上形成任选的含有金属的粘接剂层16。在应力体层20对于上面要形成应力体层20的表面具有较差的粘接性的实施例中，使用任选的含有金属的粘接剂层16。一般地，当使用包含金属的应力体层20时，使用含有金属的粘接剂层16。
在本公开中使用的任选的含有金属的粘接剂层16包含诸如但不限于Ti/W、Ti、Cr、Ni或它们的任意组合的任何金属粘接剂材料。任选的含有金属的粘接剂层16可包含单层，或者它可包含含有不同的金属粘接剂材料的至少两个层的多层结构。
可在室温（15℃～40℃）或更高的温度下形成含有金属的粘接剂层16。在一个实施例中，在20℃～180℃的温度下形成任选的含有金属的粘接剂层16。在另一实施例中，在20℃～60℃的温度下形成任选的含有金属的粘接剂层16。
可通过利用沉积技术形成可任选地使用的含有金属的粘接剂层16。例如，可通过溅射、化学气相沉积、等离子增强化学气相沉积、化学溶液沉积、物理气相沉积和电镀，形成任选的含有金属的粘接剂层16。当使用溅射沉积时，在沉积之前，溅射沉积处理还可包含原位溅射清洗处理。
在被使用时，任选的含有金属的粘接剂层16一般具有5nm～200nm的厚度，100nm～150nm的厚度是更典型的。在本公开中，也可使用低于和/或高于上述厚度范围的任选的含有金属的粘接剂层16的其它厚度。
在一些实施例中，在任选的含有金属的粘接剂层16的露出表面上形成应力体层20。在不存在任选的含有金属的粘接剂层16的一些实施例中，直接在锗基板1上或者直接在存在于锗基板1上的后表面材料层14上形成应力体层20。这些特定的实施例在附图中没有被示出，但是可很容易地从在本申请中示出的附图被导出。
在一个实施例中，在本公开中使用的应力体层20可包含在剥离温度下在锗基板10上处于拉伸应力下的任何材料。当在锗基板1的顶部施加时处于拉伸应力下的这些材料的解释性例子包含但不限于金属、诸如引起剥离的带子层的聚合物或它们的组合。可以使用可包含单个应力体层的应力体层20或包含不同的应力体材料的至少两个层的多层应力体结构。
在一个实施例中，应力体层20是金属，并且，在任选的含有金属的粘接剂层16的上表面上形成金属。在另一实施例中，应力体层20是引起剥离的带子，并且，可如图2A所示的那样直接向锗基板1的表面施加引起剥离的带子，或者可如图2B所示的那样直接向后表面材料层14施加它。在另一实施例中，例如，应力体层20可包含含有下部和上部的两部分应力体层。两部分应力体层的上部可由引起剥离的带子层构成。
当使用金属作为应力体层20时，金属可包含例如Ni、Ti、Cr、Fe或W。也可使用这些和其它金属的合金。在一个实施例中，应力体层20包含至少一个含有Ni的层。当使用聚合物作为应力体层20时，聚合物是由重复结构单元构成的大的高分子。这些子单元一般被共价化学键连接。可被用作应力体层20的聚合物的解释性例子包含但不限于聚酰亚胺(polyimide)、聚酯(polyester)、聚烯烃(polyolefin)、聚丙烯酸酯(polyacrylate)、聚亚安酯(polyurethane)、聚乙烯醋酸酯(polyvinylacetate)和聚氯乙烯(polyvinyl chloride)。
当使用引起剥离的带子层作为应力体层20时，引起剥离的带子层包含在第一温度下具有柔软性并且没有应力的任何压力敏感带，其用于形成在基底基板的上部的去除中使用的在第二温度下仍然具有强度、韧性和伸展性的带子。“压力敏感带”意味着通过压力的施加而不需要溶剂、加热或水激活来粘贴的粘接带。带子中的拉伸应力主要是由于锗基板1的第一锗层15（具有低的热膨胀系数）与带子（具有高的热膨胀系数）之间的热膨胀不匹配。
一般地，在本公开中用作应力体层20的压力敏感带至少包含粘接层和基层。用于压力敏感带的粘接层和基层的材料包含具有或没有适当增塑剂的诸如例如丙烯酸树脂(acrylics)、聚酯(polyester)、烯烃(olefin)和聚乙烯(vinyl)的聚合物材料。增塑剂是可增加添加它们的聚合物材料的可塑性的添加剂。
在一个实施例中，在室温（15℃～40℃）下形成在本公开中使用的应力体层20。在另一实施例中，当使用带子层时，可以在15℃～60℃的温度下形成带子层。
当应力体层20是金属或聚合物时，可通过使用本领域技术人员公知的沉积技术形成应力体层20，这些沉积技术包括例如浸渍涂敷、旋转涂敷、刷涂、溅射、化学气相沉积、等离子增强化学气相沉积、化学溶液沉积、物理气相沉积和电镀。
当应力体层20是引起剥离的带子层时，可通过手或通过机械手段向结构施加带子层。可通过利用本领域技术人员公知的技术形成引起剥离的带子，或者可在商业上从任何公知的粘接剂带子制造商购买它们。可在本公开中用作应力体层20的引起剥离的带子的一些例子包括例如Nitto Denko 3193MS热释放带、Kapton KPT-1、和DiversifiedBoitech的CLEAR-170（丙烯酸粘接剂，乙烯基）。
在一个实施例中，可如图2A所示的那样直接在锗基板1的表面上形成两部分应力体层20，或者如图2B所示的那样直接在后表面材料层14的表面上形成它，其中，两部分应力体层20的下部在处于室温下或稍高（例如，15℃～60℃）的第一温度下形成，其中，两部分应力体层20的上部在处于室温下的辅助温度下包含引起剥离的带子层。
如果应力体层20具有金属性质，那么它一般具有3μm～50μm的厚度，4μm～8μm的厚度是更典型的。在本公开中，也可使用低于/高于上述厚度范围的应力体层20的其它厚度。
如果应力体层20具有聚合物性质，那么它一般具有10μm～200μm的厚度，50μm～100μm的厚度是更典型的。在本公开中，也可使用低于和/或高于上述厚度范围的应力体层20的其它厚度。
仍然参照图2A和图2B，可在应力体层20的顶上形成任选的操作基板25。在本公开中使用的任选的操作基板25包含具有小于30cm的最小曲率半径的任何柔性材料。可用作任选的操作基板25的柔性材料的解释性例子包含金属箔或聚酰亚胺箔。
任选的操作基板25可被用于在锗基板1的剥离部分的操作中提供更好的断裂控制和更好的多功能性。并且，任选的操作基板25可被用于在本公开的剥离过程中引导裂纹扩展。本公开的任选的操作基板25一般但未必必需在室温（15℃～40℃）下形成。可通过利用本领域技术人员公知的沉积技术形成任选的操作基板25，这些沉积技术包括例如浸渍涂敷、旋转涂敷、刷涂、溅射、化学气相沉积、等离子增强化学气相沉积、化学溶液沉积、物理气相沉积、电镀、机械粘接、热压缩接合或焊接。任选的操作基板25一般具有1μm到几mm的厚度，70μm～120μm的厚度是更典型的。在本公开中，也可使用低于和/或高于上述厚度范围的任选的操作基板25的其它厚度。
图3A和图3B示出从应力体层20向锗基板1施加应力的情况，其中，应力切割锗基板1，以在第一锗层的剩余部分5a上提供切割表面4。图3A示出从直接沉积于锗基板1上的应力体层20向锗基板1施加应力的情况。图3B示出从沉积于存在于锗基板1上的后表面材料层14上的应力体层20向锗基板1施加应力的情况。锗和锡合金层10存在于在上面形成有应力体层20的表面与锗基板1的切割表面4之间。在图3A和图3B中，附图标记5a表示附着于应力体层20上的第一锗层5的剩余部分，而附图标记5b表示被去除的第一锗层5的剥离部分。
导致锗基板1剥离的条件与应力体层20厚度值和应力体层20的应力值的组合以及锗基板1的机械属性有关。在给定的应力体层20厚度值上，将存在这样一种应力值，即，在高于该应力值时，将自发地出现剥离。类似地，在给定的应力体层20应力值上，将存在这样一种厚度值，即，在大于该厚度值时，将自发地出现剥离。
对于应力体层20基本上由拉伸应力Ni构成的情况剥离变得可能的应力体层20厚度值的适当指导由关系式t*=[(2.5x106)(KIC 3/2)]/σ2给出，这里，t*是受控的剥离变得可能的应力体层20的厚度值（单位是微米），K1C是锗基板1的断裂韧度值（单位是MPa*m1/2），例如，第一锗层5的断裂韧度值，而σ是应力体层20中的应力值的大小（单位是MPa或兆帕）。如果拉伸应力层20厚度比由t*给出的值大大约50%，那么会出现自发的剥离。另一方面，应力体层20的厚度可以为约1μm～约50μm或约3μm～30μm或约4μm～约20μm厚的任意值。
应力体层20的选择不必如现有技术那样为了促进自发剥离而基于应力体层20的热膨胀系数与锗基板1的热膨胀系数之间的差值，在现有技术中，通过将结构从高温（约900℃）冷却到较低的温度实现剥离。本公开不依赖地自发剥离，而是依赖于机械力的使用和基本上室温（约20℃）下的受控断裂，以使各单独的一层或多个层与锗基板1分离，例如，使第一锗层5的第一部分5a与锗基板1分离。从锗基板1附着于应力体层20上的第一锗层5的剩余部分5a的厚度大致为应力体层20的厚度值的两倍或到三倍。通过控制应力体层20中的应力量，可以选择应力体层20的可操作厚度值（t*）以去除第一锗层5的受控厚度。
例如，如果希望在剥离之后包含第二锗层15、锗和锡合金层10和第一锗层的剩余部分5a的锗基板1的剩余部分的厚度为约10μm，那么镍的应力体层20会需要为约4μm厚。通过使用Ge<111>的K1C值（0.59MPa*m1/2），可使用以上的t*的表达式以算出需要约600MPa的应力值。
虽然应力体层20中的应力的来源是固有的（源自微结构）并且不是由于热膨胀系数（CTE）应力，但是，加热应力体层20常常具有增加应力值的效果。这是由于在退火时出现并且不可逆的应力体层20内的微结构变化。因此，设想局部加热以启动要被层转印的区域的周边的断裂。换句话说，可使得自发剥离在小的选定区域中出现，以例如通过增加这些小的选定区域中的应力层的厚度来帮助启动断裂。可通过使用激光、远程感应加热或直接接触加热执行局部加热。
具有通过上述的受控剥离过程形成的切割表面4的第一锗层5的第一部分5a一般具有1000nm～几十μm的厚度，5μm～50μm的厚度是更典型的。通过上述的剥离过程从锗基板去除的第一锗层5的第二部分5b一般具有1000nm～几十μm的厚度，5μm～50μm的厚度是更典型的。
在本公开的一些实施例中，从锗基板1去除任选的操作基板25、应力体层20和任选的含有金属的粘接剂层16。例如，并且在一个实施例中，可对于去除任选的操作基板25、应力体层20和任选的含有金属的粘接剂层16使用王水（HNO3/HCl）。在另一例子中，使用UV或热处理以去除任选的操作基板25，然后是通过化学蚀刻去除拉伸应力层20，然后是通过不同的化学蚀刻去除任选的含有金属的粘接剂层16。
图4A和图4B示出对于锗和锡合金层10选择性地进行锗基板1的切割表面4的蚀刻的一些实施例。图4A示出蚀刻图3A所示的结构的切割表面4的情况，而图4B示出蚀刻图3B所示的结构的切割表面4的情况。在一些实施例中，锗和锡合金层10用作去除切割表面4的蚀刻终止，并且去除源自切割表面4的锗基板1中的厚度的变化。如这里使用的那样，在参照材料去除过程时使用的术语“选择性”表示第一材料的材料去除率比向其施加材料去除过程的结构的至少另一材料的去除率大。在一些例子中，选择性可大于100:1，例如，1000:1。
在一个实施例中，去除第一锗层5的剩余部分5a的切割表面4的蚀刻处理是包含对于锗和锡合金层10具有选择性的蚀刻化学品的湿蚀刻。在一个实施例中，蚀刻化学品包含过氧化氢（H2O2）。在另一实施例中，用于相对于锗和锡合金层10选择性地去除第一锗层5的剩余部分5a的蚀刻化学品包含过氧化氢（H2O2）、氢氟酸（HF）和水（H2O）的溶液或诸如二氟化氙（XeF2）蚀刻的干蚀刻技术。注意，以上的蚀刻化学品仅出于解释的目的被提供，并且不是要限制本公开。例如，只要蚀刻化学品在不去除锗和锡合金层10的情况下去除第一锗层5的剩余部分5a，就可使用其它的蚀刻化学品。可在本公开的该点上使用的其它蚀刻处理包括反应离子蚀刻、离子束蚀刻、等离子蚀刻或激光烧蚀。
在切割表面4的蚀刻和第一锗层5的剩余部分5a的去除之后，锗基板1，即第二锗层15和锗和锡合金层10的厚度可以为0.1微米～20微米。在另一例子中，锗基板，即第二锗层15与锗和锡合金层10的厚度可以为0.5微米～5微米。在本公开的该点上的锗基板1的整个宽度上的厚度变化小于
图5A和图5B示出去除锗和锡合金层10的一些实施例。图5A示出从图4A所示的结构去除锗和锡合金层10的情况，而图5B示出从图4B所示的结构去除锗和锡合金层10的情况。在一个实施例中，对于第二锗层15选择性地去除锗和锡合金层10。在一个实施例中，去除锗和锡合金层10的蚀刻处理是包含对于第二锗层15具有选择性的蚀刻化学品的湿蚀刻。在一个实施例中，用于对于第二锗层15选择性地去除锗和锡合金层10的蚀刻化学品包含氢氧化铵（NH4OH）、氢氧化钾（KOH）、氢氧化四甲基铵（TMAH）和它们的混合物或稀释物。注意，以上的蚀刻化学品仅出于解释的目的被提供，并且不是要限制本公开。例如，只要蚀刻化学品在不去除第二锗层15的情况下去除锗和锡合金层10，就可使用其它的蚀刻化学品。可在本公开的该点上使用的其它蚀刻处理包含反应离子蚀刻、离子束蚀刻、等离子蚀刻或激光烧蚀。
在去除锗和锡合金层10之后，锗基板1，即第二锗层15的厚度可以为0.1微米～20微米。在另一例子中，第二锗层15的厚度可以为0.5微米～5微米。在本公开的该点上在第二锗层15的整个宽度上的厚度变化小于
图1～5B示出剥离方法的一个实施例，其中锗和锡合金层10用作蚀刻终止层以提供在其整个宽度上具有均匀厚度的锗层。在本公开的另一实施例中，锗和锡合金层10在与受控剥离技术结合使用时被用作断裂引导层。在一些实施例中，为了有利于锗和锡合金层10内的断裂，在被用作断裂引导层时锗和锡合金层10可暴露于氢气以改变锗和锡合金层10的接合结构。
图6A和图6B示出其中示出了在从应力体层10向锗基板1施加应力之前弱化锗和锡合金层10的一些实施例，其中，在本实施例中，锗和锡合金层10提供断裂面。图6A和图6B所示的锗基板1与图1所示的锗基板1类似。因此，包含图1所示的第一锗层5、锗和锡合金层10和第二锗层15的锗基板1的以上描述适于描述包含图6A和图6B所示的第一锗层5、锗和锡合金层10和第二锗层15的锗基板1。并且，图2A和图3B所示的后表面材料层14、应力体层20、操作基板25和任选的含有金属的粘接剂层16的描述适于图6A和图6B所示的后表面材料层14、应力体层20、操作基板25和任选的含有金属的粘接剂层16。
在锗和锡合金层10提供断裂面的实施例中，选择锗和锡合金层10的成分，使得锗和锡合金层10处于固有应力下。具体而言，当在诸如第一锗层5的锗材料之上形成时，锗和锡合金层10一般是压缩应变材料。当锗和锡合金层10包含硅并且硅以比存在于锗和锡合金层10中的锡大的浓度存在于锗和锡合金层10中时，锗和锡合金层10是拉伸应变材料。由于具有约4:1的Si:Sn的摩尔比的Ge（SiSn）三元合金导致与Ge类似的晶格参数，因此，导致压缩应力的最一般的合金范围由Gex(Si1-ySny)1-x给出，这里，（0≤x≤1）并且（0.2≤y≤1）。类似地，当（0≤y≤0.2）时，将导致拉伸应力。例如，拉伸应变的锗和锡合金层10可包含50at.%的锗、5at.%的锡和45at.%的硅。作为比较，压缩应变的锗和锡合金层10可包含50at.%的锗、15at.%的锡和35at.%的硅。
在一个实施例中，通过用含氢气体和/或等离子或含氢酸处理锗基板1的至少一个表面，使锗和锡合金层10弱化。可在向锗基板1沉积应力体层20之前进行通过含氢气体和/或等离子或含氢酸的对于锗基板1的处理，或者，可在向锗基板1沉积应力体层20之后进行通过含氢气体和/或等离子或含氢酸的对于锗基板1的处理。与以上参照图1-5B描述的实施例类似，可直接在锗基板1的第二锗层15上沉积应力体层20，或者，可在存在于锗基板1上的后表面材料层14上沉积应力体层20。
在一个实施例中，含氢气体是氢气（H2）。氢气可伴随诸如氩或氦的运载气体。在一个实施例中，可通过含氢的等离子处理锗基板1。等离子是原子或分子中的大多数被离子化的气体。可通过RF（AC）频率或两个电极之间的DC放电产生等离子，在该DC放电中，两个电极之间的空间包含含氢气体。电能将含氢气体混合物变换成反应基、离子、中性原子和分子和其它的高度受激物质。在处理中包含将在产生反应气体的等离子之后出现的化学反应。例如，原子和分子碎片与锗基板1交互作用以将氢气引向锗基板1。在一个实施例中，用于沉积和相关的材料处理的等离子中的分级电离(fractional ionization)从典型的电容放电中的10-4变为高密度感应等离子中的高达5～10%。虽然电弧放电和感应等离子可在大气压力下被引发，但是，等离子一般工作在例如1毫托～10毫托的几毫托到例如1托～10托的几托的压力下。可通过射频电容放电、感应耦合等离子（ICP）、电子回旋共振（ECR）和螺旋波提供等离子。在通过含氢酸处理锗基板的实施例中，可通过氢氟酸（HF）、盐酸（HCl）或硫酸提供含氢气体。还设想在高压（诸如许多大气压）下执行氢化或氘化，以增加氢向基板中的传送。
在通过含氢气体和/或等离子或含氢酸的处理之后，氢扩散到固有应力锗和锡合金层10内的键中，其中，氢与锗和锡合金层10的键之间的交互作用使锗和锡合金层10内的键弱化。
图7A和图7B示出从应力体层20向图6A和图6B所示的锗基板1施加应力的一些实施例，其中，应力沿锗和锡合金层10切割锗基板1。除了在图7A和图7B所示的方法中锗基板1沿锗和锡合金层10切割以外，图7A和图7B所示的通过应力体层20向锗基板1施加应力的情况与以上参照图2A和图2B描述的通过使用应力体层20向锗基板1施加应力的方法类似。
图8A和图8B示出从图7所示的结构去除锗和锡合金层10的剩余部分10a的一些实施例。在一个实施例中，对于第二锗层15选择性地去除锗和锡合金层10的剩余部分10a。在一个实施例中，去除锗和锡合金层10的剩余部分10a的蚀刻处理是包含对于第二锗层15具有选择性的蚀刻化学品的湿蚀刻。在一个实施例中，用于对于第二锗层15选择性地去除锗和锡合金层10的剩余部分10a的蚀刻化学品包含氢氧化铵（NH4OH）、氢氧化钾（KOH）、氢氧化四甲基铵（TMAH）和它们的混合物或稀释物。注意，以上的蚀刻化学品仅出于解释的目的被提供，并且不是要限制本公开。例如，只要蚀刻化学品在不去除第二锗层15的情况下去除锗和锡合金层10，就可使用其它的蚀刻化学品。可在本公开的该点上使用的其它蚀刻处理包含反应离子蚀刻、离子束蚀刻、等离子蚀刻或激光烧蚀。
在去除锗和锡合金层10之后，锗基板1，即第二锗层15的厚度可以为0.1微米～20微米。在另一例子中，第二锗层15的厚度可以为0.5微米～10微米。在本公开的该点上在第二锗层15的整个宽度上的厚度变化小于
可在制造包含但不限于半导体器件和光生伏打器件的各种类型的薄膜器件时使用上述的方法。图9A示出在源自图1～8A所示的方法序列的锗基板1的剩余部分上形成光生伏打器件100a的一个实施例。
图9A示出诸如多结III-V光生伏打电池的光生伏打器件100a的一个实施例，其包含具有1微米～10微米的厚度的第二锗层15（以下，称为锗层15），其中，锗层15具有小于在第一锗层的整个宽度上的厚度变化。锗层15可通过以上参照图1～8A描述的剥离方法中的至少一种被设置，并且提供光生伏打器件100a的底部电池150的至少一个部件。锗层15一般具有第一导电性，并且，一般在锗层15的顶上形成具有与第一导电性相反的第二导电性的半导体层6。例如，如果锗层15被掺杂为p型导电性，那么半导体层6被掺杂为n型导电性，反之亦然。半导体层6可由含硅材料或含锗材料构成。半导体层6可以是外延沉积层。适于形成半导体层6的CVD处理的例子包括大气压力CVD（APCVD）、低压力CVD（LPCVD）、等离子增强CVD（PECVD）、金属有机CVD（MOCVD）、超高真空CVD（UHV-CVD）和它们的组合。锗层15和半导体层6的组合可提供光生伏打器件100a的底部电池150。光生伏打器件的底部电池150可具有10微米或更小的厚度。
在一个实施例中，光生伏打器件100a包含由与由含锗材料构成的底部电池150直接接触的至少一个III-V半导体材料构成的至少一个顶部电池200。至少一个顶部电池200由任意数量的III-V半导体材料的任意数量的层构成。“III-V半导体材料”是由来自元素周期表的第III族和第V族的元素构成的合金。在一个实施例中，至少一个顶部电池200由选自包含以下的组的至少一种III-V半导体材料构成：锑化铝（AlSb）、砷化铝（AlAs）、氮化铝（AlN）、磷化铝（AlP）、砷化镓（GaAs）、磷化镓（GaP）、锑化铟（InSb）、砷化铟（InAs）、氮化铟（InN）、磷化铟（InP）、砷化铝镓（AlGaAs）、磷化铟镓（InGaP）、砷化铝铟（AlInAs）、锑化铝铟（AlInSb）、氮化镓砷（GaAsN）、锑化镓砷（GaAsSb）、氮化铝镓（AlGaN）、磷化铝镓（AlGaP）、氮化铟镓（InGaN）、锑化铟砷（InAsSb）、锑化铟镓（InGaSb）、磷化铝镓铟（AlGaInP）、磷化铝镓砷（AlGaAsP）、磷化铟镓砷（InGaAsP）、磷化铟砷锑（InArSbP）、磷化铝铟砷（AlInAsP）、氮化铝镓砷（AlGaAsN）、氮化铟镓砷（InGaAsN）、氮化铟铝砷（InAlAsN）、氮化镓砷锑（GaAsSbN）、氮化砷化锑化镓铟（GaInNAsSb）、砷化锑化磷化镓铟（GaInAsSbP）和它们的组合。
提供至少一个顶部电池200的III-V半导体材料中的每一个可具有单晶、多晶体或多晶晶体结构。III-V半导体材料中的每一个可以是外延的。为了在至少一个顶部电池200中提供与电池中的每一个的结并提供与底部电池150的结，III-V半导体材料可被掺杂成p型或n型导电性。掺杂原子的效果，即，它是p型还是n型掺杂剂依赖于基材晶格上的被掺杂剂原子占据的位置。在III-V半导体中，当占据第III族原子的位置时，来自第II族的原子用作受主，即p型，而当它们替代来自第V族的原子时，第VI族中的原子用作施主，即n型。诸如硅（Si）的来自第IV族的掺杂剂原子根据它们是否分别占据第III族或第V族原子的位置而分别具有它们可用作受主或施主的属性。这种杂质被称为两性杂质。提供PN结的至少一个顶部电池200中的层中的每一层可具有100nm～6000nm的厚度。在另一实施例中，至少一个顶部电池200中的层中的每一层可具有500nm～4000nm的厚度。
仍然参照图9A，可随后形成至少与至少一种III-V半导体材料的至少一个顶部电池200电连通的前触头500。可通过丝网印刷技术沉积前触头500。在另一实施例中，通过施加蚀刻或电铸金属图案提供前触头500。在形成用于前触头500的金属图案时使用的金属材料可包含施加金属糊剂。金属糊剂可以是诸如Al糊剂、Ag糊剂或AlAg糊剂的任何导电糊剂。也可通过使用溅射或电镀沉积在形成用于前触头500的金属图案时使用的金属材料。在一些实施例中，当应力体层20由诸如金属的导电材料构成时，可通过应力体层20提供后触头。在其它的实施例中，可通过使用与前触头500类似的方法和材料形成后触头。
图9B示出源自图1～8B所示的方法序列的光生伏打器件100b的一个实施例。
由于其它的光生伏打结构在本公开的范围内，因此，图9A和图9B所示的光生伏打结构100a、100b仅出于解释性的目的被提供，并且不是要限制本公开。例如，图9A和图9B所示的光生伏打结构还可包含隧道层、反射器层、半反射层和透明导电氧化物层。在另一例子中，在锗层15与半导体层6之间存在本征半导体层，并且，光生伏打器件是p-i-n太阳能电池。
虽然关于本公开的优选实施例特别示出和描述了本公开，但是，本领域技术人员可以理解，在不背离本公开的精神和范围的情况下，可以提出形式和细节的以上和其它的变化。因此，本公开不应限于描述和示出的确切的形式和细节，而是要落入所附的权利要求的范围内。

Claims (19)

1.一种切割半导体材料的方法，包括：
设置锗基板，所述锗基板包括第一锗层、存在于第一锗层上的锗和锡合金层、以及存在于锗和锡合金层上的第二锗层；
在锗基板的第二锗层上沉积应力体层；
从应力体层向锗基板施加应力，其中，应力切割锗基板的第一锗层以提供切割表面，其中，锗和锡合金层存在于第二锗层与第一锗层的剩余部分的所述切割表面之间；和
对于所述锗和锡合金层选择性地进行所述切割表面的蚀刻以去除第一锗层的所述剩余部分，其中锗基板的包括第二锗层和锗和锡合金层的剩余部分在锗基板的该剩余部分的整个宽度上具有均匀的厚度。
2.根据权利要求1所述的方法，其中，锗和锡合金层包含0.5at.％～20at.％的锡、少于50at.％的硅和余量的锗。
3.根据权利要求2所述的方法，其中，锗和锡合金层的硅含量被选择以抵消由锗和锡合金层的锡含量引起的应力。
4.根据权利要求1所述的方法，其中，第一锗层包含100％锗的基材，并且，第二锗层包含100％锗的基材。
5.根据权利要求1所述的方法，其中，锗和锡合金层的形成包含来自锗和锡固体源材料的分子束外延、至少来自含锗的源气体和含锡的源气体的化学气相沉积或它们的组合。
6.根据权利要求5所述的方法，其中，含锡的源气体包含锡烷即SnH4、Stannane-d4即SnD4或它们的组合。
7.根据权利要求1所述的方法，其中，应力体层由含有金属的层、聚合物层、粘接带或它们的组合组成。
8.根据权利要求1所述的方法，其中，在锗基板的第二锗层上沉积应力体层包含将含有金属的层粘接连接于锗基板的第二锗层上。
9.根据权利要求1所述的方法，其中，在第一锗层的与第一锗层的上面形成有锗和锡合金层的表面相对的后表面上，形成后表面场层、后表面钝化层、隧道层和后太阳能电池结中的至少一个，其中，后表面场层、后表面钝化层、隧道层和后太阳能电池结中的至少一个提供锗基板的上面沉积有应力体层的表面。
10.根据权利要求1所述的方法，还包括与应力体层的与应力体层的沉积于锗基板上的表面相对的表面接合的操作基板。
11.根据权利要求1所述的方法，其中，从应力体层向锗基板施加应力包含向应力体层施加的在锗基板中产生应力的机械力或向应力体层施加的产生与锗基板的热膨胀差以在锗基板中提供应力的温度变化，其中，源自向应力体层施加的机械力或温度变化的锗基板中的应力导致锗基板的第一锗层内的裂纹扩展并提供切割表面。
12.根据权利要求1所述的方法，其中，对于所述锗和锡合金层选择性地进行所述切割表面的蚀刻以去除第一锗层的所述剩余部分包含由过氧化氢构成的湿蚀刻。
13.根据权利要求1所述的方法，还包括对于第二锗层选择性地进行锗和锡合金层的去除。
14.一种切割半导体材料的方法，包括：
设置锗基板，所述锗基板包括第一锗层、存在于第一锗层上的锗和锡合金层、以及存在于锗和锡合金层上的第二锗层；
弱化锗和锡合金层；
在锗基板上沉积应力体层；和
从应力体层向锗基板施加应力，其中，应力沿锗和锡合金层切割锗基板。
15.根据权利要求14所述的方法，其中，锗和锡合金层包含0.5at.％～20at.％的锡、少于50at.％的硅和余量的锗。
16.根据权利要求14所述的方法，其中，选择锗和锡合金层的硅含量以在锗和锡合金层中提供拉伸应力，或者选择锗和锡合金层的锡含量以提供压缩应力。
17.根据权利要求14所述的方法，其中，弱化锗和锡合金层包含用含氢的气体、含氢的酸或它们的组合处理锗基板，其中，来自含氢的气体、含氢的酸或它们的组合的氢扩散到锗和锡合金层以弱化锗和锡合金层内的接合。
18.根据权利要求14所述的方法，其中，从应力体层向锗基板施加应力包含向应力体层施加的在锗基板中产生应力的机械力或向应力体层施加的产生与锗基板的热膨胀差以在锗基板中提供应力的温度变化，其中，源自向应力体层施加的机械力或温度变化的锗基板中的应力导致沿锗和锡合金层的裂纹扩展并切割锗基板。
19.根据权利要求14所述的方法，还包括对于第二锗层选择性地进行锗和锡合金层的剩余部分的蚀刻。
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