CN102693946A - 半导体器件制造方法以及存储器制造方法 - Google Patents
半导体器件制造方法以及存储器制造方法 Download PDFInfo
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- CN102693946A CN102693946A CN2012101912265A CN201210191226A CN102693946A CN 102693946 A CN102693946 A CN 102693946A CN 2012101912265 A CN2012101912265 A CN 2012101912265A CN 201210191226 A CN201210191226 A CN 201210191226A CN 102693946 A CN102693946 A CN 102693946A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 230000015654 memory Effects 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 125
- 230000004888 barrier function Effects 0.000 claims abstract description 99
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000002955 isolation Methods 0.000 claims abstract description 35
- 125000006850 spacer group Chemical group 0.000 claims description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000003989 dielectric material Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 14
- 238000010276 construction Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 238000007667 floating Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000002159 nanocrystal Substances 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000012856 packing Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 175
- 238000003860 storage Methods 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 12
- 238000000605 extraction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 239000002784 hot electron Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
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CN201210191226.5A CN102693946B (zh) | 2012-06-11 | 2012-06-11 | 半导体器件制造方法以及存储器制造方法 |
US13/914,244 US8778761B2 (en) | 2012-06-11 | 2013-06-10 | Method of manufacturing semiconductor device |
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CN201210191226.5A CN102693946B (zh) | 2012-06-11 | 2012-06-11 | 半导体器件制造方法以及存储器制造方法 |
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CN102693946A true CN102693946A (zh) | 2012-09-26 |
CN102693946B CN102693946B (zh) | 2017-04-05 |
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US (1) | US8778761B2 (zh) |
CN (1) | CN102693946B (zh) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077926A (zh) * | 2012-12-20 | 2013-05-01 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN103295968A (zh) * | 2013-06-03 | 2013-09-11 | 上海宏力半导体制造有限公司 | 半导体器件的制备方法 |
CN104347516A (zh) * | 2013-08-02 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种制作嵌入式闪存的方法 |
CN105655341A (zh) * | 2016-01-29 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN107731837A (zh) * | 2017-09-19 | 2018-02-23 | 上海华虹宏力半导体制造有限公司 | 存储器工艺方法 |
CN108695332A (zh) * | 2018-05-18 | 2018-10-23 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其形成方法、控制方法 |
CN109830481A (zh) * | 2019-03-20 | 2019-05-31 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其制造方法 |
CN110061066A (zh) * | 2019-04-30 | 2019-07-26 | 苏州固锝电子股份有限公司 | 一种浅沟槽的电极同侧二极管芯片的制造工艺 |
CN110349960A (zh) * | 2019-07-08 | 2019-10-18 | 上海华虹宏力半导体制造有限公司 | 嵌入式闪存的版图结构、嵌入式闪存及其形成方法 |
CN110993559A (zh) * | 2019-12-23 | 2020-04-10 | 上海华力微电子有限公司 | 半导体器件的形成方法 |
CN113192957A (zh) * | 2021-04-27 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 闪存存储器的制造方法 |
CN115312454A (zh) * | 2022-10-11 | 2022-11-08 | 合肥新晶集成电路有限公司 | 半导体结构及其形成方法 |
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KR102650539B1 (ko) * | 2016-09-23 | 2024-03-27 | 삼성전자주식회사 | 3차원 반도체 장치의 제조 방법 |
CN110896669B (zh) | 2018-12-18 | 2021-01-26 | 长江存储科技有限责任公司 | 多堆叠三维存储器件以及其形成方法 |
CN110896668B (zh) | 2018-12-18 | 2021-07-20 | 长江存储科技有限责任公司 | 多堆栈三维存储器件以及其形成方法 |
CN109768050B (zh) * | 2018-12-18 | 2020-11-17 | 长江存储科技有限责任公司 | 三维存储器及其制备方法 |
CN110914991B (zh) | 2018-12-18 | 2021-04-27 | 长江存储科技有限责任公司 | 具有转移的互连层的三维存储器件以及其形成方法 |
KR20210075689A (ko) * | 2019-12-13 | 2021-06-23 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
CN111341776B (zh) * | 2020-03-18 | 2023-11-14 | 上海华虹宏力半导体制造有限公司 | 存储器及其形成方法、存储器单元阵列及其驱动方法 |
CN112382635B (zh) * | 2020-11-12 | 2023-11-10 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制造方法 |
CN113192838B (zh) * | 2021-03-24 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | 闪存存储器的形成方法 |
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WO2002025733A3 (en) * | 2000-09-22 | 2002-06-13 | Sandisk Corp | Non-volatile memory cell array and methods of forming |
US20050042828A1 (en) * | 2003-08-21 | 2005-02-24 | Jung-Ho Moon | Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device |
US20060203543A1 (en) * | 2005-03-08 | 2006-09-14 | Magnachip Semiconductor Ltd. | Non-volatile memory device and method for fabricating the same |
CN1855442A (zh) * | 2005-04-25 | 2006-11-01 | 联华电子股份有限公司 | 非挥发性存储单元及其制造方法 |
CN1945798A (zh) * | 2005-08-17 | 2007-04-11 | 三星电子株式会社 | 制造非易失性存储器件的方法 |
CN102332432A (zh) * | 2011-07-28 | 2012-01-25 | 上海宏力半导体制造有限公司 | 半导体集成器件制造方法 |
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2012
- 2012-06-11 CN CN201210191226.5A patent/CN102693946B/zh active Active
-
2013
- 2013-06-10 US US13/914,244 patent/US8778761B2/en active Active
Patent Citations (6)
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WO2002025733A3 (en) * | 2000-09-22 | 2002-06-13 | Sandisk Corp | Non-volatile memory cell array and methods of forming |
US20050042828A1 (en) * | 2003-08-21 | 2005-02-24 | Jung-Ho Moon | Semiconductor device with split gate electrode structure and method for manufacturing the semiconductor device |
US20060203543A1 (en) * | 2005-03-08 | 2006-09-14 | Magnachip Semiconductor Ltd. | Non-volatile memory device and method for fabricating the same |
CN1855442A (zh) * | 2005-04-25 | 2006-11-01 | 联华电子股份有限公司 | 非挥发性存储单元及其制造方法 |
CN1945798A (zh) * | 2005-08-17 | 2007-04-11 | 三星电子株式会社 | 制造非易失性存储器件的方法 |
CN102332432A (zh) * | 2011-07-28 | 2012-01-25 | 上海宏力半导体制造有限公司 | 半导体集成器件制造方法 |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103077926A (zh) * | 2012-12-20 | 2013-05-01 | 上海宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN103077926B (zh) * | 2012-12-20 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN103295968A (zh) * | 2013-06-03 | 2013-09-11 | 上海宏力半导体制造有限公司 | 半导体器件的制备方法 |
CN103295968B (zh) * | 2013-06-03 | 2016-12-28 | 上海华虹宏力半导体制造有限公司 | 半导体器件的制备方法 |
CN104347516B (zh) * | 2013-08-02 | 2017-06-13 | 中芯国际集成电路制造(上海)有限公司 | 一种制作嵌入式闪存的方法 |
CN104347516A (zh) * | 2013-08-02 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | 一种制作嵌入式闪存的方法 |
CN105655341B (zh) * | 2016-01-29 | 2018-07-27 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN105655341A (zh) * | 2016-01-29 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | 半导体器件的形成方法 |
CN107731837A (zh) * | 2017-09-19 | 2018-02-23 | 上海华虹宏力半导体制造有限公司 | 存储器工艺方法 |
CN108695332A (zh) * | 2018-05-18 | 2018-10-23 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其形成方法、控制方法 |
CN109830481A (zh) * | 2019-03-20 | 2019-05-31 | 上海华虹宏力半导体制造有限公司 | 分栅式闪存及其制造方法 |
CN110061066A (zh) * | 2019-04-30 | 2019-07-26 | 苏州固锝电子股份有限公司 | 一种浅沟槽的电极同侧二极管芯片的制造工艺 |
CN110061066B (zh) * | 2019-04-30 | 2024-02-09 | 苏州固锝电子股份有限公司 | 一种浅沟槽的电极同侧二极管芯片的制造工艺 |
CN110349960A (zh) * | 2019-07-08 | 2019-10-18 | 上海华虹宏力半导体制造有限公司 | 嵌入式闪存的版图结构、嵌入式闪存及其形成方法 |
CN110993559A (zh) * | 2019-12-23 | 2020-04-10 | 上海华力微电子有限公司 | 半导体器件的形成方法 |
CN110993559B (zh) * | 2019-12-23 | 2023-08-18 | 上海华力微电子有限公司 | 半导体器件的形成方法 |
CN113192957A (zh) * | 2021-04-27 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 闪存存储器的制造方法 |
CN113192957B (zh) * | 2021-04-27 | 2024-04-16 | 上海华虹宏力半导体制造有限公司 | 闪存存储器的制造方法 |
CN115312454A (zh) * | 2022-10-11 | 2022-11-08 | 合肥新晶集成电路有限公司 | 半导体结构及其形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20130330894A1 (en) | 2013-12-12 |
US8778761B2 (en) | 2014-07-15 |
CN102693946B (zh) | 2017-04-05 |
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