CN102586757B - 氮化硅的热化学气相沉积 - Google Patents

氮化硅的热化学气相沉积 Download PDF

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CN102586757B
CN102586757B CN201210069512.4A CN201210069512A CN102586757B CN 102586757 B CN102586757 B CN 102586757B CN 201210069512 A CN201210069512 A CN 201210069512A CN 102586757 B CN102586757 B CN 102586757B
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R·S·伊尔
S·M·苏特
J·W·史密斯
G·W·迪贝罗
A·塔姆
B·特兰
S·坦东
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Abstract

氮化硅的热化学气相沉积，本发明的设备包含处理区；基材托架；气体输送系统；气体混合区；加热元件，该加热元件用以将固定在面板上的转接环加热到所需要的温度；以及有温度控制的排气系统。此外，本发明是关于涉及一种方法和设备，其可包括：将双(第三-丁基胺)硅烷气化；将双(第三-丁基胺)硅烷和氨送入处理室中；在由转接环和至少两折流板所界定的另一混合区中，组合此两种反应物；加热该转接环；并将该双(第三-丁基胺)硅烷经由气体分配板送入该处理区内。

Description

氮化硅的热化学气相沉积
本申请是申请号为“200480040845.8”、申请日为2004年8月25日、题为“氮化硅的热化学气相沉积”的专利申请的分案申请。
技术领域
本发明的实施例大致上是关于一般涉及基材的处理。更明确的说，本发明是关于尤其涉及化学气相沉积室和工艺。
背景技术
热化学气相沉积(CVD)薄膜是应用于在集成电路内形成多重材料层。热CVD薄膜可用作为绝缘体、扩散源、扩散和植入掩模、分隔板、及最后的钝化层。这些薄膜通常是在数个处理室内沉积而成，各处理室各自有特定的热学和质量传递性，以便多电路载体(例如基材)的表面形成具有最佳最优化均匀物理性和化学性的沉积薄膜的沉积。这些处理室经常作为大型整合工具的部件以便在基材表面制造多重组件。这些处理室的设计是一次只处理一个基材或处理多个基材。
在器件的几何尺寸缩减以实现更快的集成电路之际，在满足日益增长的提高产率、新颖薄膜性质及低杂质的需求的同时，也须考虑如何精减沉积薄膜的热处理预算。传统上，热学CVD是在700℃或甚至更高的温度下分批于热炉中以低压状态沉积数小时进行的。若降低沉积温度便可降低热能支出，此时只需使用较低温的前驱物或缩短沉积时间。热学CVD工艺若在处理速率控制模式下运作易受温度波动影响，若在质量传递控制模式下运作则易受不均匀流动所影响，或若在处理速率及质量传递控制混合模式下运作，则会受到两者的影响。有效的处理室设计必须包括精准的温度波动控制及充份的配送流以便在基材上形成均匀的沉积膜。处理室和排放设备的设计是依据前驱物和处理副产物的性质而异。
发明内容
本发明是一种CVD室，其能藉由改变单晶片热式CVD室的机械设计而提供均匀的热能分配、均匀的工艺助剂分配、有效的前驱物输送、及有效的残留物和排放物管理。这些改良包括处理室，其中包含由室本体和室盖所界定出的处理区；设置在该处理区内的衬底托架；安装在该室盖上的气体输送系统，该气体输送系统包含由一转接环和界定气体混合区的两个折流板；以及固定在该转接环上的面板；定位成将该转接环加热到所需温度的加热元件；以及有温度控制的排气系统。
这些改良亦包括一种用以在基材上沉积氮化硅层或碳掺杂或含碳的氮化硅层的方法，该方法包含：将双(第三-丁基胺)硅烷(BTBAS)或其它硅前驱物气化；使该双(第三-丁基胺)硅烷流入处理室；使氨和/或其它氮前驱物流入处理室中；在该处理室室盖中的混合器内组合此两种反应物；该室盖具有由一转接环和至少两个折流板所界定的另一混合区；加热该转接环，并使该双(第三-丁基胺)硅烷流经气体分配板进入基材上方的处理区中。此种改良能减少基材表面的缺陷并提高产率。
附图说明
为求能详细了解上述本发明列述的特色，以上本发明的概要说明将参照多个实施例，其中部份将以附图例示。不过，本发明在此声明，这些附图仅用以例示本发明的典型实施例，而非限制其范畴，而本发明仍包括其它类似的实施例。
图1是一处理室实施例的横剖示意图，其中包括气体分配组件和基材托架组件。
图2的分解示意图是该处理室和其工艺用具的各种组件。
图3是该面板气体输入口的例示图。
图4是狭缝阀衬垫的立体示意图。
图5是排气磊送板的立体示意图。
图6是该排气磊送板的盖板的立体示意图。
图7是另一工艺用具的立体概图，其可作为单晶片热学CVD处理室以及将气体输送至处理室的液体输送系统。
图8是例示该基材的表面，显示所收集到的样品是取自该基材整个表面。
具体实施方式
本发明的多个实施例提出一种可在基材上形成沉积层的器件，以及一种在基材上形成沉积层的方法。其硬件说明，包括实施例的例示图，先予以展示。在硬件说明后将说明该工艺的修饰及测试结果。
图1是一单晶片CVD处理室的纵切面图，该处理室具有多个室壁106和一室盖110。该处理室的多个室壁实质上为圆柱状。该室壁有数个部分可受热。该室壁上设置有一狭缝阀通道114，可供晶片或其它基材进入。
基材托架111是用以支托基材且可加热该处理室。除了该基材托架以外，该处理室的基座亦可包含一基材托架组件、一反射板或其它辅助热传导的机构、各种测量处理室状态的探针、一排气组件、及其它用于支托该基材和控制该处理室环境的设备。
进料气体在穿过室盖110中的混合器113和第一折流板104内的多个孔(未显示)后，便经由气体输送系统送入该处理室内。该进料气体为气态，其中可包括多种液体的蒸气和多种气体。然后该气体便流经混合区102，其是位于第一折流板104和第二折流板105之间。该第二折流板105的构造是由一转接环103支托。当该气体穿过该第二折流板105上的多个孔(未显示)之后，该气体先流经面板108再进入主要处理区，该主要处理区是由该处理室的多个壁106、该面板108、及该基材托架111所界定而成。该气体再经由排气板109流出该处理室。其室盖110可更包括多个气体进气口、一气体混合器、一等离子体发射源、及一或多个气体配送组件。视需要，该处理室亦可在多个该处理室室壁106和该室盖110之间包括一插入件101，该室盖110受热后可对该转接环103提供热能而将该混合区102和该面板108加热。另一在图1中例示的额外选用的硬件是排气板盖板112，其是位于排气磊送板109的上方。最后，亦可额外选用一狭缝阀衬垫115以减少热能经由该狭缝阀通道114流失。
图2是该气体输入系统的分解图。图2例示由该室盖110、多个折流板104、105、该转接环103、和该面板108架构成一具有加热面的空间，可将多种气体加热并混合，然后再进入该处理室的处理区。
图3则是面板108的例示图。该面板108是由转接环103支托。该面板108是藉由多个螺丝连接到该转接环103且具有多个孔，可在该处理室的处理区内产生较佳的气体输入配送。
图4是视需要选用的狭缝阀衬垫115的立体示意图。该狭缝阀衬垫115减少热能经由狭缝阀通道114流失。
图5是排气板109的立体简图，该排气板109用于控制源自该处理室的处理区的排气流。该简图显示该板的设计是用以调整源自该处理室的排气，以弥补在该处理室内因狭缝阀的存在所造成的热传递偏差。
图6是该排气板109的一排气板盖板112的立体简图。此图是例示该盖板设计的孔洞有特定图案，可弥补该处理室内的任何排气流偏差。
图7是该室盖组件另一实施例的放大图。室盖209可藉由多个断热组件212与其余的处理室隔离。该多个断热组件212是位于加热罩203的上方面和底部表面。该加热罩203亦可连接到折流板205和面板208。视需要，可将该室盖或室盖零组件的多个部件加热到需要的温度。
室盖组件可包括一气体输入口213，用以将多种进料气体预先混合、和用以形成一空间202的多个部件，一空间202由室盖209、多个断热组件212、加热罩203、及多个折流板204和205所界定。此空间202能使多种反应气体的滞留时间延长，以便在进入该处理室的基材处理区之前先充分混合。加热元件210对该空间202的界定表面加热以避免在该空间的表面上有原料、凝结气、及副产物堆积。该多个受热面亦可将反应气体预热，以有助于多种气体离开该面板208及进入该处理室的基材处理区时的热能和质量传递。
图7亦为气体输入系统的零组件的例示图，其能将氨-硅化合物，例如BTBAS，添加在CVD室内。BTBAS是储放在一大安瓶401中。BTBAS从大安瓶401流向处理安瓶402。该BTBAS流入流量计403中。经量取的BTBAS流进气化器404内，例如有压电控制的直接液体注射器。视需要，该BTBAS可在气化器404内与来自气体供应源405的承载气体(例如氮)互相混合。此外，该承载气体亦可在进入气化器之前预先加热。所生成的气体再进入CVD室的室盖209中的气体输入口213。视需要，连接着该气化器404和该混合器113的管路亦可加热。
图8是基材的图形，其中显示多数样品是取自于该基材表面各处。
在面板108、208下方的该处理室的处理区内，其是藉由对各个表面例如其面板、该处理室的多个壁、其排气板、及其基材托架供应热能而控制热分配。热分配亦由一排气板、视需要插入一排气板盖、视需要插入一狭缝阀衬垫设计控制。该处理室的处理区内的化合物分配会受到该面板和排气板及视需要使用的排气板盖板的设计影响。当室盖和面板之间的气体输入口有充份空间且当面板受热时，等离子体清除亦较为改善。
第二折流板105和面板108是经加热以避免化学物质沉积在折流板的表面，在该处理室内预热该多种气体，并减少热能在室盖流失。将第二折流板和面板连接在室盖的转接环103有助于将该第二折流板和面板的热能与该室盖隔离。例如，该室盖可维持在温度约30-70℃，而该第二折流板和该面板则可维持在温度约100-350℃。该转接环可设计成不均匀的厚度以限制热能在该室盖流失，其功用有如一热隔离。这种该第二折流板和面板与该室盖的热隔离能使该第二折流板和面板免于感受到室盖表面温差的变化。因此，该第二折流板和面板不必像习知的处理室对该室盖加热，并且其温度能高于习知的多个处理室的多个折流板和多个面板的温度。这种由该第二折流板和面板提供的较均匀气体加热效果能在该处理室的基材上产生更均匀的沉积膜。通常，该第二折流板和面板是加热到温度约100至350℃或更高，例如介于约150到300℃。当第二折流板和面板的温度较高时，可观察到的优点的一是该处理室的膜沉积速率变快。一般认为，由于该第二折流板和面板的较高温度可使该处理室内前驱物分解加速而使沉积速率提高。第二折流板和面板温度较高的另一优点是减少CVD处理副产物在该第二折流板和面板上沉积。
排放系统对于该处理室内的热和化学分配亦有贡献。抬升板（pumpingplate）109可设计成具有多个不均匀分布的通道以弥补因狭缝阀所产生热分配问题。此抬升板可用保温材质制成，以保留由基材托架组件提供到该处理室处理区的热能，以免排放的化学物质和副产物沉积在该板表面。该抬升板特有的多道特殊设计的狭缝可弥补狭缝阀的放射式变形。其排放系统有助于维持该处理室的压力在10至350Torr。此排放系统利用多个节流阀和多个隔离阀控制压力。这些阀可受热到所需要的温度而避免副产物和未耗尽的气体及气相残余物形成。
基材托架组件111有多个设计机制能使膜均匀分布。与衬底接触的该托架表面可表征为用于将可变的热能分配到整个基材半径的多个热传递区。例如，基材托架组件可包括一双区陶瓷加热元件，该双区陶瓷加热元件可维持在500-800℃的工艺温度下，例如600-700℃。基材的温度通常约比测得的加热元件温度低约20-30℃。托架可旋转以补偿该处理室的处理区内部的热能和化学差异性。托架在该处理室内可以进行水平的、垂直的、或旋转式运行，从而手动或机械地使基材对准该处理室的中心。
处理室和其零组件的表面可以用电镀铝作为材质。此电镀铝能减少凝结和固态物质沉积。电镀铝的优势是较能保温，因而此种材质的表面能维持温度而不易凝结或沉积产物。此种材质亦较不易发生在习知的处理室表面常见的固态沉积化学处理。这些室盖、多个壁、多个分隔板片、多个折流板、面板、基材托架组件、狭缝阀、狭缝阀衬垫、及排气组件均可用固态的电镀铝涂布或制造。
稀释剂或承载气体则提供另一种机制调整膜的性质。氮或氦气可分别或合并使用。氢气或氨气亦可使用。较重的气体有助于在该处理室分散热能。较轻的气体可促使多种前驱物液体先气化再加入该处理室中。将数种工艺气体充分稀释亦有助于避免在该处理室的多个表面和多个排放系统表面形成凝结物或固态沉积物。
重复性测试以下述方式进行。比较在常规的处理室中与改良的处理室（该改良的处理室已具有上述的额外及/或经修改的组件）中形成的各个沉积膜的膜层厚度。结果发现，在改良的处理室中形成的晶片的均匀度显著改善。
以下将提供数个在本文的CVD室形成的沉积膜的实施例。气体进入这些薄膜的整体流速可在200至20,000sccm，而典型的制程其流速可达4,000sccm。膜的组成，明确言之，氮与硅的含量比值、折射率、湿蚀刻率、氢含量、和本文中所提及的任一种膜的应力均可藉由调整若干参数而修饰。这些参数包括总流速、该处理室之间距和加热时间。该系统的压力可在10至350Tor之间调整，且NH3与BTBAS的浓度比值可介于0到100。
氮化硅膜
氮化硅膜可藉由使硅前驱物与氮前驱物进行处理而在本文所述的薄膜上经化学气相沉积。适用的硅前驱物包括二氯硅烷(DCS)、六氯二硅烷(HCD)、双(第三-丁基胺)硅烷(BTBAS)、硅烷(SiH4)、二硅烷(Si2H6)、及其它的类。适用的氮前驱物包括氨(NH3)、联胺(N2H4)、及其它的类。例如：SiH4和NH3化学可适用。
在CVD处理室中，SiH4主要分解成SiH3、SiH2，可能为SiH。NH3分解成NH2、NH和H2。这些中间物互相处理而形成SiH2NH2或SiH3NH2或类似的胺-硅烷前驱物，其可扩散通过气体界面层，并在基材表面或极邻近的处进行处理而形成氮化硅膜。一般相信，若处理室表面的温度较高，能提供热能到该处理室而提高了NH2的反应性。若在该处理室的室盖的气体输入口和第二折流板之间的空间体积越大，能延长进料气体的滞留时间，使形成所要的胺-硅烷前驱物的机率提高。当所形成的前驱物的数量愈高，便能降低形成微负载图案(即在基材的致密图案区有前驱物空乏)的机率。
研究结果也发现，使NH3的流速相对于其它前驱物的流速提高，能使膜的沉积速度加快。例如，在习知系统中其NH3对SiH4的流速比值多为60比1。测试结果显示，当室盖和第二折流板之间距拉大时，在习知比值60比1到1000比1之间可形成均匀的膜。此外，当面板和基材之间距为750-850mils时其膜均匀度比在650mils下所形成的沉积膜高。
碳掺杂氮化硅膜
在一实施例中，BTBAS可作为一种含硅的前驱物而在本文所述的处理室中沉积成为碳掺杂氮化硅膜。下列机制可用于生产带有第三丁基胺副产物的碳掺杂氮化硅膜。其后BTBAS可与第三丁基胺反应而形成异丁烯。
3C8H22N2Si+NH3=>Si3N4+NH2C4H9
本文揭示条件的实施例有四个。表1列举的是压力、温度、间距、流速、及其它条件。栏1中显示一组操作条件，其使用的BTBAS浓度比其它实施例低。栏2则显示在较低温度及湿蚀刻率下操作。栏5显示的是用最低湿蚀刻率和温度而栏6显示的操作参数是兼具在此四个实施例中最高沉积速度和最低图案负载效应。在这些实施例中，晶片的加热元件温度在675至700℃而该处理室的压力是50到275Torr。
该形成碳掺杂氮化硅膜的BTBAS反应为反应速率限制型，而非质量转移限制型。在一图案化基材上形成的膜可均匀的将该已图案化的基材的外露面涂覆。BTBAS的图案负载效应(PLE)小于习知的硅前驱物，例如SiH4。表1显示BTBAS和NH3化学反应的侧壁PLE低于5%，而在相同处理室内SiH4和NH3制程则超过15%。一般相信，一些含硅前驱物呈现的图案负载效应是由于这些前驱物例如SiH4和NH3反应是质量转移限制所致。
表1.测试BTBAS效能的操作条件
以BTBAS作为反应物气体尚能调节碳含量。意即，藉由改变参数例如压力和含氮前驱物气体的浓度，便可调整生成膜的碳含量而使膜具有所希望的碳含量且使整个基材直径上的碳浓度更为均匀。BTBAS亦可以0.05至2.0克/分钟的速度加入该系统中，典型的系统可使用0.3-0.6克/分钟。表2中提供了三种组态的流速、浓度、及其生成膜的多个性质。
根据所设计的实验数据分析其组态的预测值是C5-6%和C12-13%。实验结果是C10.5%。双区陶瓷加热元件是作为硅基材的热源感受器，该双区陶瓷加热元件的外部区对内部区的电压比值可读取自VR。RI则指示折射率。WERR为氮化膜相对于热长成的氧化硅膜(作为对照组)的湿蚀刻率。
表2.三种BTBAS组态及其生成膜的性质
表3是将不同工艺条件的基材面上数个点取得的样品元素组成依元素别列举。这些样品的元素组成是以核反应分析及拉塞福背向散射光谱分析。
表3.取自基材表面位置的原子组成
表3例示在该基材表面上的碳含量偏差值为0.895%。研究发现，含碳量在2至18原子百分比的碳掺杂氮化硅膜在本文所述的处理室中的沉积速度加快。
以BTBAS作为含硅前驱物能使所形成的膜具有多个较佳性质。提高膜的碳含量可改善掺杂物残留及轮廓组合，使该器件的p沟道金属氧化半导体(PMOS)部分的效能提升。在合并使用BTBAS时亦可调整其工艺的参数以提高应力分布。提高膜应力能使该设备的n沟道金属氧化半导体(NMOS)部分的效能提升。调整该处理室的压力、总进料气体流、NH3和BTBAS进料气体比值、以及BTBAS的体积分率会影响膜应力性质。
进一步的实验结果显示，在675℃下膜不均匀度的标准偏差值低于1.5百分比。同时，在温度范围645至675℃之间膜不均匀度的组成的标准偏差值亦低于1.5百分比。大于或等于0.12pm的颗粒污染则少于30颗。
当选用低NH3浓度及低压力时湿蚀刻率变低。压力范围实验值为50至275Torr。所测得的湿蚀刻率低于0.3。该膜的湿蚀刻率是将膜蚀刻和100:1HF的热氧化物比较而计算出的。所测得的RMS糙度在400埃为0.25nm。
在温度范围625至675℃之间的膜沉积速率是125至425埃。当使用较高浓度BTBAS、较低浓度NH3、及较高压力和温度时，此沉积速率便较高。
膜的氢浓度低于15原子百分比。根据估算，膜内大多数的氢呈N-H键结。膜的碳含量是2至18原子百分比。
所观察到的增强NMOS I-drive的应力是1E9至2E10dynes/cm2(0.1至2GPa)。此应力在高浓度NH3、较低浓度BTBAS、及低压力下较高。
在相同温度范围下所测得的折射率为1.75至1.95。当系统在较低压及较低浓度BTBAS运作时折射率较高。
此外，所观察到的或估算的碳浓度介于2至18百分比。该碳浓度在低浓度NH3和高浓度BTBAS时达到最高值。
表1的结果可与习知及类似的系统比较。表1中的湿蚀刻率比值测试可和习知热炉系统的氮化硅沉积膜(其曾在100:1HF中浸泡1分钟)比较。表3的应力测试结果与在类似条件下操作结果为0.1至2.0GPa的测试的结果相似。
典型地，氮的用途是同时作为源自气体供应源的BTBAS的承载气体以及热式CVD处理的稀释剂气体。使用氢作为稀释剂气体会使BTBAS与NH3热式CVD反应的沉积速率增加达30%。使用锗烷掺杂的氢作为稀释剂气体会使沉积速率更为加快。
虽然前驱物如BTBAS可同时作为硅源和碳源，亦可将硅前驱物例如硅烷、二硅烷、六氯二硅烷、和二氯硅烷与碳前驱物例如乙烯、丁烯、和其它烯类或其它碳源组合，并在单晶片热学CVD室内使该两种前驱物与NH3反应而形成碳掺杂氮化硅膜。
碳掺杂氧化硅膜
BTBAS并具有一些工艺化学上的弹性。在BTBAS的氧化物工艺中，NH3可由氧化剂如N2O取代。在本发明所述的硬件中热学CVD可用于沉积氧化膜。
虽然前驱物如BTBAS可同时作为硅源和碳源，亦可将硅前驱物例如硅烷、二硅烷、六氯二硅烷、和二氯硅烷与碳前驱物例如乙烯、丁烯、和其它烯类或其它碳源组合，并在单晶片热学CVD室内使该两种前驱物与N2O反应而形成碳掺杂氧化硅膜。
碳掺杂氧化硅氮化膜
通常，合并使用含硅前驱物、含碳前驱物、含氧前驱物、和含氮前驱物可沉积成为碳掺杂或含碳的氧化硅氮化膜。这些膜在未来的新式设备中极可能应用在介电常数及碳含量控制上。此种低-k热沉积的CVD膜对设备可能有极大的价值。
为了制造碳掺杂或含碳氧化硅-氮化膜，BTBAS可与NH3及氧化剂例如N2O一起使用。在本发明所述的硬件中热学CVD可用于沉积氧化物氮化膜。
虽然前驱物如BTBAS可同时作为硅源和碳源，亦可将硅前驱物例如硅烷、二硅烷、六氯二硅烷、和二氯硅烷与碳前驱物例如乙烯、丁烯、和其它烯类或其它碳源组合，并在单晶片热学CVD室内使该两种前驱物与NH3和N2O反应而形成碳掺杂氧化硅氮化膜。
许多常见的低-k前驱物，例如三甲基硅烷和四甲基硅烷内含硅、氧、和碳。这些前驱物可与氮源如NH3反应，以便在单晶片热学CVD室内形成碳掺杂氧化硅氮化膜。
上述说明虽为针对本发明的实施例，但本发明的其它及进一步实施例亦可改变而仍不脱离其基本范畴，而该基本范畴是由所附的权利要求决定的。

Claims (28)

1.一种用以在半导体基材上以低温沉积膜的设备，包括:
处理室本体和室盖，该处理室本体和室盖界定出处理区;
基材托架，配置在该处理区中;
气体输送系统，装配在该室盖上，该气体输送系统包括转接环和两个折流板，该转接环和两个折流板界定出气体混合区，该气体输送系统还包括直接与该转接环接触的面板；
加热元件，配置对该转接环加热；以及
狭缝阀衬垫，部分填充该处理室本体中的狭缝阀通道。
2.如权利要求1所述的设备，其特征在于，该些折流板中的一个被固定至该室盖并且另一个折流板被固定至该转接环。
3.如权利要求1所述的设备，其特征在于，该加热元件直接接触该转接环。
4.如权利要求1所述的设备，其特征在于，所述狭缝阀衬垫表面包含电镀铝。
5.如权利要求1所述的设备，其特征在于，还包括环绕该基材托架的环形排气磊送板及位于该排气磊送板顶部上的平面的环形排气板盖板，其中该排气板盖板有多个分配的孔。
6.如权利要求1所述的设备，其特征在于，还包括气化器，与该混合区互相流通。
7.如权利要求6所述的设备，其特征在于，该气化器是与双(第三-丁基胺)硅烷的供应源互相流通。
8.一种用以在半导体基材上以低温沉积膜的设备，包括：
处理室本体和室盖，该处理室本体和室盖界定出处理区;
第一折流板，固定至该室盖;
转接环，固定至该室盖;
加热元件，与该转接环接触;
第二折流板，固定至该转接环;
面板，与该转接环接触；
狭缝阀衬垫，部分填充该处理室本体中的狭缝阀通道；以及
基材托架，配置在该处理区中。
9.如权利要求8所述的设备，其特征在于，还包括环绕该基材托架的排气磊送板及位于该排气磊送板顶部上的排气板盖板，其中该排气板盖板有多个分配的孔。
10.如权利要求8所述的设备，其特征在于，还包括气化器，与该混合区互相流通。
11.如权利要求10所述的设备，其特征在于，该气化器与双(第三-丁基胺)硅烷的供应源互相流通。
12.如权利要求10所述的设备，其特征在于，该气化器与承载气体系统互相流通。
13.如权利要求8所述的设备，其特征在于，所述狭缝阀衬垫表面包含电镀铝。
14.如权利要求13所述的设备，其特征在于，该基材托架位于该面板下方而该面板位于该些折流板的下方。
15.一种用于在基材上沉积包含硅和氮的层的方法，包括：
使双(第三-丁基胺)硅烷气化;
使该双(第三-丁基胺)硅烷流入处理室内，该处理室具有狭缝阀衬垫、面板、以及混合区，该狭缝阀衬垫部分填充形成于该处理室中的狭缝阀通道，该混合区由转接环和至少两个折流板所界定；
对该转接环加热；
对该面板加热；
使该双(第三-丁基胺)硅烷流经该加热的面板而进入基材上方的处理区。
16.如权利要求15所述的方法，其特征在于，还包括在温度550℃至800℃下沉积该层。
17.如权利要求15所述的方法，其特征在于，还包括在压力10至350Torr下沉积该层。
18.如权利要求15所述的方法，其特征在于，还包括在该双(第三-丁基胺)硅烷进入该混合区之前先将该双(第三-丁基胺)硅烷与氨、氮、联胺、氦、氢、锗烷或上述的混合物混合。
19.如权利要求15所述的方法，其特征在于，还包括选择该加热的面板和该基材的间距介于675-850密耳之间。
20.如权利要求15所述的方法，其特征在于，还包括将该面板的温度维持在100℃至350℃之间。
21.如权利要求20所述的方法，其特征在于，还包括将该面板与该室的盖进行热隔离。
22.一种用于在基材上沉积包含硅和氮的层的方法，包括：
将包含双(第三-丁基胺)硅烷和承载气体的气体混合物流入处理室，该处理室具有位于盖、转接环以及一个折流板之间的混合区，其中该转接环将至少一个折流板与该盖热隔离；
加热该转接环；
加热狭缝阀衬垫；
将该气体混合物流经加热的气体分配板进入基材上方的处理区；以及
将该基材加热以沉积该层。
23.如权利要求22所述的方法，其特征在于，还包括将该基材加热至温度550℃至800℃之间。
24.如权利要求22所述的方法，其特征在于，还包括选择该气体分配板和该基材的间距，该间距介于675-850密耳之间。
25.如权利要求22所述的方法，其特征在于，还包括将排放气体经由排气磊送板以及经由与该排气磊送板接触的排气板盖板中的孔从该处理室抽出，其中基材托架向该排气磊送板提供热量。
26.如权利要求22所述的方法，其特征在于，该气体混合物还包括氨。
27.如权利要求22所述的方法，其特征在于，还包括通过接触该转接环的元件来加热该转接环。
28.如权利要求22所述的方法，其特征在于，还包括在压力10至350Torr下沉积该层。
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