CN102473630A - 等离子蚀刻法 - Google Patents

等离子蚀刻法 Download PDF

Info

Publication number
CN102473630A
CN102473630A CN2010800266927A CN201080026692A CN102473630A CN 102473630 A CN102473630 A CN 102473630A CN 2010800266927 A CN2010800266927 A CN 2010800266927A CN 201080026692 A CN201080026692 A CN 201080026692A CN 102473630 A CN102473630 A CN 102473630A
Authority
CN
China
Prior art keywords
etching
semiconductor substrate
temperature
silicon carbide
carbide substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800266927A
Other languages
English (en)
Chinese (zh)
Inventor
大石明光
村上彰一
畑下晶保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Precision Products Co Ltd
Original Assignee
Sumitomo Precision Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Precision Products Co Ltd filed Critical Sumitomo Precision Products Co Ltd
Publication of CN102473630A publication Critical patent/CN102473630A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
CN2010800266927A 2009-10-27 2010-09-06 等离子蚀刻法 Pending CN102473630A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-246096 2009-10-27
JP2009246096A JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法
PCT/JP2010/065203 WO2011052296A1 (ja) 2009-10-27 2010-09-06 プラズマエッチング方法

Publications (1)

Publication Number Publication Date
CN102473630A true CN102473630A (zh) 2012-05-23

Family

ID=43921726

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800266927A Pending CN102473630A (zh) 2009-10-27 2010-09-06 等离子蚀刻法

Country Status (6)

Country Link
US (1) US8673781B2 (enExample)
EP (1) EP2495757B1 (enExample)
JP (1) JP5179455B2 (enExample)
KR (1) KR101861709B1 (enExample)
CN (1) CN102473630A (enExample)
WO (1) WO2011052296A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934709B1 (fr) * 2008-08-01 2010-09-10 Commissariat Energie Atomique Structure d'echange thermique et dispositif de refroidissement comportant une telle structure.
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
JP5658110B2 (ja) * 2011-08-29 2015-01-21 パナソニックＩｐマネジメント株式会社 ドライエッチング方法
KR101904126B1 (ko) * 2011-09-05 2018-10-04 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 식각 방법
JP5877982B2 (ja) * 2011-09-22 2016-03-08 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング方法
JP5888027B2 (ja) * 2012-03-14 2016-03-16 富士通株式会社 半導体装置の製造方法
US20140342569A1 (en) * 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
JP5874687B2 (ja) * 2013-05-31 2016-03-02 豊田合成株式会社 半導体素装置の製造方法
JP2017005177A (ja) * 2015-06-12 2017-01-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06169018A (ja) * 1992-11-30 1994-06-14 Nec Corp 半導体装置の製造方法
CN1429400A (zh) * 2000-04-11 2003-07-09 克里公司 用于在碳化硅中形成通孔的方法以及所获得的器件和电路
JP2008294210A (ja) * 2007-05-24 2008-12-04 Fuji Electric Device Technology Co Ltd 炭化珪素半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
JPH10303185A (ja) 1997-04-26 1998-11-13 Anelva Corp エッチング装置及びエッチング方法
JPH11162958A (ja) * 1997-09-16 1999-06-18 Tokyo Electron Ltd プラズマ処理装置及びその方法
JP2001144075A (ja) 1999-11-15 2001-05-25 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6670278B2 (en) * 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
JP2003069154A (ja) * 2001-06-11 2003-03-07 Sharp Corp 半導体レーザ素子およびその製造方法
JP2003273084A (ja) * 2002-03-15 2003-09-26 Seiko Epson Corp 大気圧プラズマ装置、大気圧プラズマ処理方法及びデバイス並びにデバイス製造方法
JP4030982B2 (ja) 2004-05-10 2008-01-09 ユーディナデバイス株式会社 半導体装置および半導体装置の製造方法
US7465670B2 (en) * 2005-03-28 2008-12-16 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity
JP4859474B2 (ja) * 2006-02-15 2012-01-25 三菱重工業株式会社 プラズマ処理方法、及び、プラズマ処理装置
JP4516538B2 (ja) 2006-03-01 2010-08-04 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP5072082B2 (ja) * 2007-09-07 2012-11-14 株式会社アルバック ドライエッチング方法
JP5309587B2 (ja) 2008-02-07 2013-10-09 富士電機株式会社 炭化珪素半導体基板のトレンチエッチング方法
JP2009194194A (ja) 2008-02-15 2009-08-27 Sumitomo Precision Prod Co Ltd プラズマ処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06169018A (ja) * 1992-11-30 1994-06-14 Nec Corp 半導体装置の製造方法
CN1429400A (zh) * 2000-04-11 2003-07-09 克里公司 用于在碳化硅中形成通孔的方法以及所获得的器件和电路
JP2008294210A (ja) * 2007-05-24 2008-12-04 Fuji Electric Device Technology Co Ltd 炭化珪素半導体装置の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHRISTOPH RICHTER ET AL: "Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures", 《MATERIAL SCIENCE AND ENGINEERING:B》, vol. 46, no. 13, 30 April 1997 (1997-04-30) *
J.R.FLEMISH ET AL: "Smooth etching of single crystal 6H-SIC in an electron cyclotron resonance plasma", 《APPLIED PHYSICS LETTERS》, vol. 64, no. 17, 25 April 1994 (1994-04-25), pages 2315 - 2317, XP002021930, DOI: doi:10.1063/1.111629 *

Also Published As

Publication number Publication date
KR101861709B1 (ko) 2018-05-28
EP2495757B1 (en) 2020-04-22
EP2495757A1 (en) 2012-09-05
US8673781B2 (en) 2014-03-18
JP5179455B2 (ja) 2013-04-10
KR20120073160A (ko) 2012-07-04
WO2011052296A1 (ja) 2011-05-05
US20120052688A1 (en) 2012-03-01
EP2495757A4 (en) 2013-02-20
JP2011096700A (ja) 2011-05-12

Similar Documents

Publication Publication Date Title
CN102473630A (zh) 等离子蚀刻法
JP5762491B2 (ja) エッチング方法
CN103828028A (zh) 等离子体蚀刻方法
TW200839866A (en) Methods for recess etching
TW201842572A (zh) 以原子層控制進行之膜的等向性蝕刻
JP5877982B2 (ja) プラズマエッチング方法
CN104616984B (zh) 等离子蚀刻处理方法以及等离子蚀刻处理装置
JP6279933B2 (ja) 炭化珪素半導体素子の製造方法
JP6567487B2 (ja) プラズマエッチング方法
JP6130313B2 (ja) プラズマエッチング方法
CN104810268A (zh) 沟槽型功率器件栅氧化层的制备方法
JP2012054616A5 (enExample)
JP2012054616A (ja) プラズマエッチング方法
CN118263091A (zh) 一种晶圆外延片表面的晶格缺陷修复方法
CN113496884A (zh) 碳化硅基板的底部氧化层增厚的制作方法
JP2000340560A (ja) 窒化方法
JP2018056344A (ja) ボロン膜およびその成膜方法、ならびにハードマスクおよびその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
CB02 Change of applicant information

Address after: Japan Tokyo Chiyoda Otemachi a chome 3 No. 2 Keidanren hall 15 order

Applicant after: Sumitomo Precision Products Co., Ltd.

Address before: Tokyo, Japan

Applicant before: Sumitomo Precision Products Co., Ltd.

C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120523