JP2012054616A5 - - Google Patents
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- Publication number
- JP2012054616A5 JP2012054616A5 JP2011273076A JP2011273076A JP2012054616A5 JP 2012054616 A5 JP2012054616 A5 JP 2012054616A5 JP 2011273076 A JP2011273076 A JP 2011273076A JP 2011273076 A JP2011273076 A JP 2011273076A JP 2012054616 A5 JP2012054616 A5 JP 2012054616A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide substrate
- etching
- plasma
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 159
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 146
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 144
- 238000005530 etching Methods 0.000 claims description 117
- 239000007789 gas Substances 0.000 claims description 61
- 238000012545 processing Methods 0.000 claims description 41
- 238000010438 heat treatment Methods 0.000 claims description 35
- 238000001020 plasma etching Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 29
- 239000011261 inert gas Substances 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 17
- 238000005513 bias potential Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- FFBGYFUYJVKRNV-UHFFFAOYSA-N boranylidynephosphane Chemical compound P#B FFBGYFUYJVKRNV-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011273076A JP2012054616A (ja) | 2011-12-14 | 2011-12-14 | プラズマエッチング方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011273076A JP2012054616A (ja) | 2011-12-14 | 2011-12-14 | プラズマエッチング方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009246096A Division JP5179455B2 (ja) | 2009-10-27 | 2009-10-27 | プラズマエッチング方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014035487A Division JP6130313B2 (ja) | 2014-02-26 | 2014-02-26 | プラズマエッチング方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012054616A JP2012054616A (ja) | 2012-03-15 |
| JP2012054616A5 true JP2012054616A5 (enExample) | 2013-02-14 |
Family
ID=45907531
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011273076A Pending JP2012054616A (ja) | 2011-12-14 | 2011-12-14 | プラズマエッチング方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2012054616A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6561804B2 (ja) | 2015-12-03 | 2019-08-21 | 三菱電機株式会社 | 半導体装置の製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH088232A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマ処理方法 |
| JPH10303185A (ja) * | 1997-04-26 | 1998-11-13 | Anelva Corp | エッチング装置及びエッチング方法 |
| JP4516538B2 (ja) * | 2006-03-01 | 2010-08-04 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
| JP5309587B2 (ja) * | 2008-02-07 | 2013-10-09 | 富士電機株式会社 | 炭化珪素半導体基板のトレンチエッチング方法 |
-
2011
- 2011-12-14 JP JP2011273076A patent/JP2012054616A/ja active Pending
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