JP2012054616A - プラズマエッチング方法 - Google Patents

プラズマエッチング方法 Download PDF

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Publication number
JP2012054616A
JP2012054616A JP2011273076A JP2011273076A JP2012054616A JP 2012054616 A JP2012054616 A JP 2012054616A JP 2011273076 A JP2011273076 A JP 2011273076A JP 2011273076 A JP2011273076 A JP 2011273076A JP 2012054616 A JP2012054616 A JP 2012054616A
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Japan
Prior art keywords
etching
semiconductor substrate
plasma
temperature
silicon carbide
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JP2011273076A
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Japanese (ja)
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JP2012054616A5 (enExample
Inventor
Akimitsu Oishi
明光 大石
Shoichi Murakami
彰一 村上
Akiyasu Hatashita
晶保 畑下
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Sumitomo Precision Products Co Ltd
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Sumitomo Precision Products Co Ltd
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Priority to JP2011273076A priority Critical patent/JP2012054616A/ja
Publication of JP2012054616A publication Critical patent/JP2012054616A/ja
Publication of JP2012054616A5 publication Critical patent/JP2012054616A5/ja
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JP2011273076A 2011-12-14 2011-12-14 プラズマエッチング方法 Pending JP2012054616A (ja)

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JP2011273076A JP2012054616A (ja) 2011-12-14 2011-12-14 プラズマエッチング方法

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JP2011273076A JP2012054616A (ja) 2011-12-14 2011-12-14 プラズマエッチング方法

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JP2009246096A Division JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法

Related Child Applications (1)

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JP2014035487A Division JP6130313B2 (ja) 2014-02-26 2014-02-26 プラズマエッチング方法

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JP2012054616A true JP2012054616A (ja) 2012-03-15
JP2012054616A5 JP2012054616A5 (enExample) 2013-02-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9805978B2 (en) 2015-12-03 2017-10-31 Mitsubishi Electric Corporation Method of manufacturing semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
JPH10303185A (ja) * 1997-04-26 1998-11-13 Anelva Corp エッチング装置及びエッチング方法
JP2007234912A (ja) * 2006-03-01 2007-09-13 Eudyna Devices Inc 半導体装置およびその製造方法
JP2009188221A (ja) * 2008-02-07 2009-08-20 Fuji Electric Device Technology Co Ltd 炭化珪素半導体基板のトレンチエッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
JPH10303185A (ja) * 1997-04-26 1998-11-13 Anelva Corp エッチング装置及びエッチング方法
JP2007234912A (ja) * 2006-03-01 2007-09-13 Eudyna Devices Inc 半導体装置およびその製造方法
JP2009188221A (ja) * 2008-02-07 2009-08-20 Fuji Electric Device Technology Co Ltd 炭化珪素半導体基板のトレンチエッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9805978B2 (en) 2015-12-03 2017-10-31 Mitsubishi Electric Corporation Method of manufacturing semiconductor device

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