KR101861709B1 - 플라즈마 식각 방법 - Google Patents

플라즈마 식각 방법 Download PDF

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Publication number
KR101861709B1
KR101861709B1 KR1020117023438A KR20117023438A KR101861709B1 KR 101861709 B1 KR101861709 B1 KR 101861709B1 KR 1020117023438 A KR1020117023438 A KR 1020117023438A KR 20117023438 A KR20117023438 A KR 20117023438A KR 101861709 B1 KR101861709 B1 KR 101861709B1
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South Korea
Prior art keywords
silicon carbide
carbide substrate
substrate
etching
gas
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Korean (ko)
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KR20120073160A (ko
Inventor
아키미츠 오이시
쇼이치 무라카미
마사야스 하타시타
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에스피피 테크놀로지스 컴퍼니 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020117023438A 2009-10-27 2010-09-06 플라즈마 식각 방법 Active KR101861709B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009246096A JP5179455B2 (ja) 2009-10-27 2009-10-27 プラズマエッチング方法
JPJP-P-2009-246096 2009-10-27
PCT/JP2010/065203 WO2011052296A1 (ja) 2009-10-27 2010-09-06 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
KR20120073160A KR20120073160A (ko) 2012-07-04
KR101861709B1 true KR101861709B1 (ko) 2018-05-28

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KR1020117023438A Active KR101861709B1 (ko) 2009-10-27 2010-09-06 플라즈마 식각 방법

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US (1) US8673781B2 (enExample)
EP (1) EP2495757B1 (enExample)
JP (1) JP5179455B2 (enExample)
KR (1) KR101861709B1 (enExample)
CN (1) CN102473630A (enExample)
WO (1) WO2011052296A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2934709B1 (fr) * 2008-08-01 2010-09-10 Commissariat Energie Atomique Structure d'echange thermique et dispositif de refroidissement comportant une telle structure.
WO2012008179A1 (ja) * 2010-07-12 2012-01-19 住友精密工業株式会社 エッチング方法
JP5658110B2 (ja) * 2011-08-29 2015-01-21 パナソニックＩｐマネジメント株式会社 ドライエッチング方法
CN103828028B (zh) * 2011-09-05 2016-08-17 Spp科技股份有限公司 等离子体蚀刻方法
JP5877982B2 (ja) * 2011-09-22 2016-03-08 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング方法
JP5888027B2 (ja) * 2012-03-14 2016-03-16 富士通株式会社 半導体装置の製造方法
US20140342569A1 (en) * 2013-05-16 2014-11-20 Applied Materials, Inc. Near surface etch selectivity enhancement
JP5874687B2 (ja) * 2013-05-31 2016-03-02 豊田合成株式会社 半導体素装置の製造方法
JP2017005177A (ja) * 2015-06-12 2017-01-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010008798A1 (en) * 1997-09-16 2001-07-19 Yoko Naito Plasma treatment system and method
JP2007217733A (ja) * 2006-02-15 2007-08-30 Mitsubishi Heavy Ind Ltd プラズマ処理方法、及び、プラズマ処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07105441B2 (ja) * 1992-11-30 1995-11-13 日本電気株式会社 半導体装置の製造方法
JPH088232A (ja) * 1994-06-22 1996-01-12 Sony Corp プラズマ処理方法
US5571374A (en) * 1995-10-02 1996-11-05 Motorola Method of etching silicon carbide
JPH10303185A (ja) 1997-04-26 1998-11-13 Anelva Corp エッチング装置及びエッチング方法
JP2001144075A (ja) 1999-11-15 2001-05-25 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6475889B1 (en) * 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
US6670278B2 (en) * 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
JP2003069154A (ja) * 2001-06-11 2003-03-07 Sharp Corp 半導体レーザ素子およびその製造方法
JP2003273084A (ja) * 2002-03-15 2003-09-26 Seiko Epson Corp 大気圧プラズマ装置、大気圧プラズマ処理方法及びデバイス並びにデバイス製造方法
JP4030982B2 (ja) 2004-05-10 2008-01-09 ユーディナデバイス株式会社 半導体装置および半導体装置の製造方法
US7465670B2 (en) * 2005-03-28 2008-12-16 Tokyo Electron Limited Plasma etching method, plasma etching apparatus, control program and computer storage medium with enhanced selectivity
JP4516538B2 (ja) 2006-03-01 2010-08-04 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP5135885B2 (ja) 2007-05-24 2013-02-06 富士電機株式会社 炭化珪素半導体装置の製造方法
JP5072082B2 (ja) 2007-09-07 2012-11-14 株式会社アルバック ドライエッチング方法
JP5309587B2 (ja) 2008-02-07 2013-10-09 富士電機株式会社 炭化珪素半導体基板のトレンチエッチング方法
JP2009194194A (ja) 2008-02-15 2009-08-27 Sumitomo Precision Prod Co Ltd プラズマ処理方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010008798A1 (en) * 1997-09-16 2001-07-19 Yoko Naito Plasma treatment system and method
JP2007217733A (ja) * 2006-02-15 2007-08-30 Mitsubishi Heavy Ind Ltd プラズマ処理方法、及び、プラズマ処理装置

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
J.R.Flemish 외 1인, "Smooth etching of single crystal 6H-SiC in an electron cyclotron resonance plasma reactor, Applied Physics Letters, 1994.04.25.*
KIM HAN-KI et al. Inductively coupled plasma reactive ion etching of ZnO, Journal of Vacuum Science

Also Published As

Publication number Publication date
JP5179455B2 (ja) 2013-04-10
US8673781B2 (en) 2014-03-18
JP2011096700A (ja) 2011-05-12
EP2495757A4 (en) 2013-02-20
US20120052688A1 (en) 2012-03-01
KR20120073160A (ko) 2012-07-04
EP2495757A1 (en) 2012-09-05
EP2495757B1 (en) 2020-04-22
WO2011052296A1 (ja) 2011-05-05
CN102473630A (zh) 2012-05-23

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