CN102385260B - Immersion liquid, exposure apparatus, and exposure process - Google Patents
Immersion liquid, exposure apparatus, and exposure process Download PDFInfo
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- CN102385260B CN102385260B CN201110325529.7A CN201110325529A CN102385260B CN 102385260 B CN102385260 B CN 102385260B CN 201110325529 A CN201110325529 A CN 201110325529A CN 102385260 B CN102385260 B CN 102385260B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Abstract
An immersion liquid is provided comprising an ion-forming component, e.g. an acid or a base, that has a relatively high vapor pressure. Also provided are lithography processes and lithography systems using the immersion liquid.
Description
The application is the application number of on February 6th, 2006 application be 200680004444.6 the dividing an application of patented claim (title: immersion liquid, exposure device and exposure method).
The reference of related application
The right of priority of the U.S. Patent application 11/071,044 of current application requirement application on March 3rd, 2005, described U.S. Patent application requires the rights and interests of the U.S. Provisional Patent Application 60/651,513 of application on February 10th, 2005.Two priority applications are by reference to integral body and in this.
Technical field
The present invention relates to immersion liquid, exposure device and exposure method.
Background technology
Because liquid immersion lithography provides the improvement to critical dimension and/or the depth of focus, therefore, liquid immersion lithography has obtained concern.Yet this technology also faces some problems.For example, on the one hand, when region that dry ultrapure immersion liquid is got wet, described liquid is conducive to make to occur that the possibility of polluting is minimum, but then, may be desirably in immersion liquid, add adjuvant, to affect or to produce the attribute of expecting.For example, may be desirably in immersion liquid and comprise acid composition, to avoid or to make so-called T-shaped top (T-topping) or other less desirable effect to minimize.For example, when by the resist layer contact immersion liquid being exposed on the substrate of radiant rays, and the composition in resist (for example, photo acid generator) is when spreading or being dissolved in immersion liquid, may occur T-shaped top.Referring to EP 1 482 372Al.
Thus, object of the present invention comprises provides a kind of immersion liquid, and described immersion liquid comprises one or more adjuvants, and has the pollution problem reducing.
In addition, object of the present invention comprises and avoids or make minimizing (below will describe in more detail) by the mobile streaming potential effect causing (streaming potential effects) of immersion liquid.
Summary of the invention
The invention provides immersion liquid, exposure device and exposure method.
In one embodiment, the invention provides the immersion liquid forming by the following method, described method comprises: ion forming component (component) is added to liquid (for example aqueous liquid), wherein: the vapor pressure of described ion forming component is greater than 0.1kPa, be for example greater than the vapor pressure of water.
In one embodiment, the invention provides pH value lower than 7 immersion liquid, the described composition that is greater than 0.1kPa (being for example greater than the vapor pressure of water) by vapor pressure at least in part lower than 7 pH value causes.
In one embodiment, the invention provides the immersion liquid that pH value is greater than 7, described in be greater than the composition that 7 pH value is greater than 0.1kPa (being for example greater than the vapor pressure of water) by vapor pressure at least in part and cause.
In one embodiment, the invention provides the immersion liquid that conductivity is at least 0.1 μ S/cm, for example, be at least 1.3 μ S/cm 25 ℃ time.In one embodiment, the invention provides a kind of immersion liquid, it has: the conductivity of 0.1-100 μ S/cm scope in the time of 25 ℃, for example scope of 1.3-100 μ S/cm in the time of 25 ℃.In one embodiment, the composition that described conductivity is greater than 0.1kPa (being for example greater than the vapor pressure of water) by vapor pressure at least in part causes.
And, the invention provides the method for using immersion liquid, for example immersion lithography process.In an example, the invention provides a kind of manufacture method, comprising: make photosensitive substrate be exposed to radiant rays, wherein: before arriving described substrate, described radiant rays is through immersion liquid.
In addition, the invention provides immersion lithographic system, it comprises: liquid immersion lithography device; With one or more immersion liquids.
In one embodiment, the invention provides a kind of method, comprising:
(i) vapor pressure is greater than to 0.1kPa, for example, is greater than the vapor pressure of water, composition be added into liquid;
(ii) make photosensitive substrate be exposed to radiant rays, wherein: before arriving described photosensitive substrate, described radiant rays has passed the described aqueous liquid that comprises described composition,
Wherein: the described interpolation step of adding described composition has increased the ion concentration in described liquid.
In one embodiment, the invention provides a kind of method, comprising:
(i) acid is added to liquid, described acid has at least vapor pressure of 0.1kPa, for example 5kPa at least;
(ii) make photosensitive substrate be exposed to radiant rays, wherein: before arriving described photosensitive substrate, described radiant rays is through the described liquid that comprises described composition.
In one embodiment, the invention provides a kind of method, comprising:
(i) make radiation beam form pattern;
(ii) radiation beam that makes to form pattern is for example, through liquid (, aqueous liquid), and described liquid comprises by vapor pressure and be greater than the ion that the composition of 0.1kPa forms, and the conductivity of described liquid is at least 0.25 μ S/cm;
(iii) make photosensitive substrate be exposed to the radiation beam that forms pattern.
In one embodiment, the invention provides immersion lithographic system, comprising:
(i) liquid immersion lithography exposure device; With
(ii) immersion liquid, for example immersion liquid of conductivity within the scope of 0.1-100 μ S/cm (for example, in the time of 25 ℃ in the scope of 1.3-100 μ S/cm) in the time of 25 ℃, or rich carbonated immersion liquid.
In one embodiment, the invention provides a kind of lithographic equipment, it has voltage generator, can for example, for example, between the first component (substrate table) of lithographic equipment and the second component (immersion hood of liquid immersion lithography device) of lithographic equipment, apply voltage difference.In one embodiment, the invention provides a kind of method, be for example included in, for example, between the first component (substrate table) of lithographic equipment and the second component (immersion hood of liquid immersion lithography device) of lithographic equipment and apply voltage difference.
In this instructions, listed other object of the present invention, advantage and characteristic, and by research subsequently, wherein a part will be clearly for those of ordinary skill in the art, or can recognize by putting into practice the present invention.
Accompanying drawing explanation
Fig. 1 represents immersion lithographic system according to an embodiment of the invention.
Fig. 2 represents the embodiment of the immersion hood of immersion lithographic system according to an embodiment of the invention.
Embodiment
In advance, in multiple occasion, the vapor pressure of composition is mentioned in current application.About this point, " vapor pressure of composition " refers to the vapor pressure of locating the composition under pure state (not being therefore potpourri or solution) at 20 ℃.
In one embodiment, the invention provides immersion liquid.In addition, the invention provides the method for using immersion liquid, for example immersion lithography process.
Immersion liquid
In one embodiment, utilization comprises one or more compositions is joined to the method in liquid, prepares immersion liquid, and described liquid is for example aqueous liquid, for example with respect to the general assembly (TW) of liquid, liquid comprises the water of 50wt% at least (such as water of 75wt% at least etc.), at least 90wt%, at least water of 95wt%, the water of 99wt% at least, the water of 99.5wt% at least, the water of 99.9wt% at least, or the water of 99.99wt% at least.In one embodiment, before adding one or more compositions, described liquid has the conductivity that is less than 0.1 μ S/cm (determining) in the time of 25 ℃.In one embodiment, described liquid before adding one or more compositions through degassed.In one embodiment, described liquid is purified before adding one or more compositions.In one embodiment, described liquid is ultrapure, de aerated water.
In one embodiment, add the composition of liquid to there is relatively high vapor pressure.Vapor pressure for example for example helps avoid, when substrate is removed (evaporation) immersion liquid substrate is polluted.In one embodiment, add the vapor pressure of the composition of liquid to surpass the vapor pressure of the liquid that it adds.In one embodiment, add the composition of liquid to there is at least vapor pressure of 0.1kPa, for example: at least 0.25kPa, at least 0.5kPa, at least 0.75kPa, 1kPa at least, at least 1.3kPa, at least 1.5kPa, at least 1.8kPa, 2.1kPa at least, or surpass the vapor pressure (surpassing 2.34kPa) of water.In one embodiment, add the composition of liquid to there is at least vapor pressure of 3.5kPa, 5kPa at least for example, 10kPa at least, 20kPa at least, 30kPa at least, or 50kPa at least.In one embodiment, the composition being added into is formic acid or acetic acid.In one embodiment, under 20 ℃, 1 atmospheric pressure, with its respective pure form, adding the composition of liquid is gas.In one embodiment, adding the composition of liquid is carbon dioxide.In one embodiment, with respect to the general assembly (TW) of immersion liquid, described immersion liquid comprise vapor pressure lower than 2.0kPa (for example,, lower than 1.5kPa, lower than 1kPa, lower than 0.5kPa, lower than 0.25kPa, lower than 0.1kPa, or 0kPa) the composition that is less than 5wt%, for example, be less than 3wt%, be less than 1wt%, be less than 0.5wt%, be less than 0.25wt%, be less than 0.1wt%, be less than 0.05wt%, be less than 0.025wt%, be less than 0.01wt%, or be less than 0.005wt%.In one embodiment, (for example do not consider the Main Components of immersion liquid, water in immersion liquid using water as Main Components), comprise have the immersion liquid essence of the composition of vapor pressure be relatively have lower than the vapor pressure of 2.0kPa lack composition (absent component), vapor pressure is for example lower than 1.5kPa, lower than 1kPa, lower than 0.5kPa, lower than 0.25kPa, lower than 0.1kPa, or 0kPa.
In one embodiment, the composition that is added into liquid is for example by promoting ion to form the electrical conductance that has promoted liquid.The conductivity that increases immersion liquid can contribute to reduce or avoid streaming potential problem.Streaming potential is for example at article " Streaming Potential Cells For The Study of Erosion-Corrosion Caused By Liquid Flow " by Varga and Dunne in J.Phys.D:Appl.Phys., 18 (1985), discuss in p.211-220.For example, by corroding or corroding, streaming potential for example can shorten the life-span of for example coating, sensor and/or (aligning) mark (the especially for example essence conductive compositions of coating, sensor and/or mark) of contacting with immersion liquid stream.In one embodiment, the conductivity that comprises the liquid of described composition is at least 0.1 μ S/cm in the time of 25 ℃, for example, be at least 0.25 μ S/cm, at least 0.5 μ S/cm, at least 0.75 μ S/cm, at least 1 μ S/cm, at least 1.3 μ S/cm, at least 1.5 μ S/cm, at least 1.75 μ S/cm, at least 2 μ S/cm, at least 3 μ S/cm, at least 5 μ S/cm, at least 10 μ S/cm, at least 25 μ S/cm, or at least 50 μ S/cm.Although above-mentioned and following conductivity locates to determine at 25 ℃, residing temperature when immersion liquid is used can be different.Yet the value of quoting is still conductivity definite in the time of 25 ℃.
Although increase the impact that conductivity can contribute to reduce or eliminate streaming potential, it has also increased the amount that need to add the composition of immersion liquid, this can cause polluting or bubble problem.In one embodiment, the conductivity of the liquid that comprises described composition is less than 50mS/cm in the time of 25 ℃, for example, be less than 25mS/cm, be less than 10mS/cm, be less than 5mS/cm, be less than 1mS/cm, be less than 500 μ S/cm, be less than 250 μ S/cm, be less than 150 μ S/cm, be less than 75 μ S/cm, be less than 50 μ S/cm, be less than 25 μ S/cm, be less than 15 μ S/cm, be less than 10 μ S/cm, be less than 7 μ S/cm, be less than 4 μ S/cm, or be less than 2 μ S/cm.In one embodiment, liquid electric conductivity in the time of 25 ℃ in the scope of 0.1-100 μ S/cm, for example, 0.25-25 μ S/cm, 0.4-10 μ S/cm, or 0.6-6 μ S/cm.In one embodiment, by salt or acid are added to liquid, increased for example conductivity of the liquid of aqueous liquid (such as ultrapure water).In one embodiment, described liquid is rich in acetic acid, formic acid, CO
2(CO
2can be formed in water/form IONS OF H with water
+and HCO
3 -), or NH
3(NH
3can be formed in water/form ion NH with water
4 +and OH
-).
In addition,, by reducing speed and/or the eddy current of current, electrokinetic potential can be reduced or be avoided.In addition, although not necessarily can avoid streaming potential itself, but in the region that affected by streaming potential (for example, substrate table, for example sensor on substrate table or sensor board) and other region between provide voltage difference to limit or the less desirable impact that makes to be caused by streaming potential invalid.In one embodiment, the invention provides a kind of lithographic equipment, it has: voltage generator can for example, for example, apply voltage difference between the first component (substrate table) of lithographic equipment and the second component (immersion hood of liquid immersion lithography device) of lithographic equipment.In one embodiment, the invention provides a kind of method, be for example included in, for example, between the first component (substrate table) of lithographic equipment and the second component (immersion hood of liquid immersion lithography device) of lithographic equipment and apply voltage difference.In one embodiment, this voltage difference is at least 0.1V, 0.25V at least for example, 0.5V at least, 1V at least, 2V at least, 3V at least, 4V at least, or 5V at least.In one embodiment, voltage difference is less than 50V.
In one embodiment, the composition that adds liquid is sour composition, for example, and acetic acid, formic acid or CO
2.The acidity of immersion liquid for example contributes to slow down/to reduce diffusion or the dissolving in immersion liquid of the photo acid generator (photo-acid generators) that exists in resist by help, keeps the effect of the resist that may contact with immersion liquid.In one embodiment, comprise that the liquid of described composition has the pH value lower than 7, for example, lower than 6.5, lower than 6.0, lower than 5.5, lower than 5.0, lower than 4.5, or lower than 4.0.In one embodiment, this pH value is at least 2.0, for example, and at least 2.5, at least 3.0, at least 3.5, at least 3.75, at least 4.0, at least 4.5, at least 5.0, or at least 5.5.In one embodiment, the composition that adds liquid is base, for example ammonia (NH
3).If resist comprises alkaline components (base) rather than the acid ingredient that may leak in immersion liquid, the basicity of immersion liquid can contribute to maintenance may contact the effect of the resist of immersion liquid.In one embodiment, comprise that the liquid of described composition has the pH value over 7, for example, over 7.5, surpass 8, surpass 8.5, surpass 9, over 9.5 or over 10.In one embodiment, this pH value is lower than 14.
Add the mode of liquid can be different (one or more) composition, and to a certain extent, may for example depend on the type (for example, it whether can be used as gas, solid or liquid obtain) that adds composition.In one embodiment, by the diffusion via barrier film, add described composition.For example, described liquid can be in a side flow of barrier film, and composition is at the opposite side of barrier film, and whereby, described liquid can not osmotic membrane, but composition is permeable, thereby allows composition to diffuse into liquid.In one embodiment, the described composition so adding is gas, for example CO
2.In one embodiment, described composition adds together with one or more inert gases, for example N
2.Correspondingly, in one embodiment, liquid (for example, aqueous liquid, as ultrapure water) is in a side flow of barrier film, and CO
2/ N
2potpourri flows at the opposite side of barrier film, makes CO
2and N
2diffuse into liquid.The commercial examples of applicable membrane apparatus for example comprises the LIQUI-CEL barrier film extractor from MEMBRANA.In one embodiment, for example, by described composition (is flowed into, splashing into) described liquid is (or for example when described composition is that ammonia, liquid are while being water, by making denseer composition/liquid solution flow into described liquid, and can add ammonia by denseer water ammonification solution is flowed in water), described composition is added into liquid.Can carry out away from this device add (immersion liquid can be " pre-prepd ") of (one or more) composition.Add operation can in being connected to the separative element of this device, carry out (for example, the water purification unit of device can be used for adding one or more compositions), or add operation can be integrated into this device.
Method
The invention provides the method for using above-mentioned immersion liquid, for example wherein substrate is exposed to radiant rays and wherein arrives before substrate, and radiant rays is through the method for immersion liquid.
In one embodiment, provide and comprised the method that makes substrate be exposed to radiant rays, wherein: as described in the preceding paragraph, described radiant rays is through immersion liquid.In an example, the method comprises: make radiation beam form pattern (for example,, by groove or independent programmable element array); Make the light beam that forms pattern for example, through optical projection system (, lens arra); Make the light beam that forms pattern through immersion liquid; With the light beam that utilizes formation pattern, a part for substrate is exposed.In one embodiment, this substrate is Semiconductor substrate, for example semiconductor wafer.In one embodiment, semiconductor substrate materials is from Si, SiGe, and SiGeC, SiC, Ge, GaAs, InP, and choose in the group that forms of InAs.In one embodiment, this Semiconductor substrate is III/V semiconducting compound.In one embodiment, Semiconductor substrate is silicon substrate.In one embodiment, this substrate is glass substrate.In one embodiment, this substrate is ceramic substrate.In one embodiment, this substrate is organic substrate, for example plastic substrate.In one embodiment, this substrate is photosensitive substrate, for example, by making substrate cover one deck resist.
In one embodiment, the device producing method providing comprises:
(i) make radiation beam form pattern;
(ii) radiation beam that makes to form pattern is through aqueous liquid, and described aqueous liquid comprises by vapor pressure and is greater than the ion that the composition of 0.1kPa forms;
(iii) make photosensitive substrate be exposed to the radiation beam that forms pattern.
In addition, in one embodiment, the method providing comprises:
(i) make radiation beam form pattern;
(ii) radiation beam that makes to form pattern is through the liquid that comprises acid or base, and the vapor pressure of described acid or base surpasses the vapor pressure of described liquid;
(ii) make photosensitive substrate be exposed to radiant rays, wherein: before arriving described photosensitive substrate, described radiant rays is through the described aqueous liquid that comprises described composition.
In one embodiment, the method is photoetching method, such as immersion lithography process.The example of the device of execution immersion lithography process as shown in Figure 1.Device shown in Fig. 1 comprises:
Irradiation system (irradiator) IL, is configured to regulate radiation beam PB (for example UV radiant rays or DUV radiant rays);
Supporting construction (for example, mask stage) MT is constructed to support patterning apparatus MA and is connected to the first steady arm PM, and described the first steady arm PM is constructed in order to accurately to locate patterning apparatus according to special parameter.This support construction supports, i.e. carrying, the weight of patterning apparatus.It keeps patterning apparatus to rely on the mode of the orientation of patterning apparatus, the design of lithographic equipment and other condition, such as for example patterning apparatus, whether is maintained at vacuum environment.This supporting construction can be used machinery, vacuum, static or other tensioning technique to keep patterning apparatus.This supporting construction can be for example can be fixed as required or mobile framework or estrade.This supporting construction can be guaranteed: for example, with respect to optical projection system, patterning apparatus is in the position of expectation.Term used herein " patterning apparatus " should be broadly interpreted as refer to can be used in its transversal section, give radiation beam pattern, to produce any device of pattern in the target portion at substrate.If be noted that for example pattern comprises phase-shift characterisitc or so-called auxiliary property, the pattern that gives irradiation beam is the desired pattern in the target portion of corresponding substrate not exactly.Conventionally, the pattern that gives irradiation beam is by the specific function layer in the device corresponding to creating in target portion, such as integrated circuit.This patterning apparatus can be transmission or reflection.The example of patterning apparatus comprises mask and independently programmable element arrays (for example, programmable mirror array or Programmable LCD panel).Mask is known in field of lithography, and comprises the mask type such as two, alternating phase-shift and attenuating phase-shift, and multiple hybrid mask types.An example of programmable mirror array is used the matrix of little mirror to arrange, and it can be by independent inclination so that the radiation beam entering along different directions reflection.This tilting mirror makes the radiation beam being reflected by mirror matrix form pattern.
Substrate table (for example, wafer station) WT is configured to keep substrate (for example, the wafer that resist covers) W and is connected to the second steady arm PW, and described the second steady arm PW is configured to according to the accurate position substrate of special parameter.In one embodiment, this wafer station comprises one or more sensor (not shown), for example imageing sensor (for example transmitting image sensor), dose sensor and/or aberration sensor.In one embodiment, one or more described sensors comprise one or more metals, for example chromium.In one embodiment, one or more described sensors are for example coated with apposition titanium nitride.
Optical projection system (for example, refraction projection lens combination) PL, it is configured to by patterning apparatus MA, will give the C of target portion (for example, comprising or multiple tube core) that projects to substrate W with the pattern of radiation beam PB.
This irradiation system can comprise: various types of opticses, such as refraction, reflection, magnetic, electromagnetism, static, or the optics of other type, or its any combination, be used in reference to, be shaped or control radiant rays.Term used herein " optical projection system " should be broadly interpreted as comprising: the optical projection system of any type, comprise refraction, reflection, reflected refraction, magnetic, electromagnetism and electrostatic optics system, or its any combination, the exposing radiation using as being suitable for, or for the other factors such as using immersion liquid or use vacuum.In one embodiment, this optical projection system comprises any lens matrix.In one embodiment, this device comprises the matrix of optical projection system, for example, to increase treatment capacity.
As described herein, described device is transmission-type (for example, using transmissive mask).Alternatively, described device can be reflection type (for example, uses the programmable mirror array of type as mentioned above, or use reflecting mask).
Described lithographic equipment can be the type with two (two platforms) or many substrate tables (and/or two or more mask stage).In this " multi-platform " machine, additional platform can parallelly be used, or can on one or more platforms, carry out preliminary step, and one or more other is used to exposure simultaneously.
With reference to Fig. 1, irradiator IL accepts radiation beam from irradiation source SO.This source can be separated entity with lithographic equipment, for example, when described source is excimer laser.In this case, this irradiation source is not considered to form a part for lithographic equipment, and for example, by means of beam Propagation system BD (comprising applicable sensing mirror and/or optical beam expander), radiation beam passes to irradiator IL from source SO.In other situation, irradiation source can be the integral part of lithographic equipment, for example, when irradiation source is mercury lamp.If needed, together with beam Propagation system BD, this irradiation source SO and irradiator IL can be known as radiating system.In one embodiment, the radiant rays being provided by radiation source S O has at least wavelength of 50nm, for example, and 100nm at least, 150nm at least, 175nm at least, 200nm at least, 225nm at least, 275nm at least, 325nm at least, 350nm at least, or 360nm at least.In one embodiment, the radiant rays being provided by radiation source S O has the wavelength of 450nm at the most, for example, and 425nm at the most, 375nm at the most, 360nm at the most, 325nm at the most, 275nm at the most, 250nm at the most, 225nm at the most, 200nm at the most, or 175nm at the most.In one embodiment, radiant rays has 365nm, 355nm, 248nm, or the wavelength of 193nm.
This irradiator IL can comprise regulator AD, for regulating the angle intensity distributions of radiation beam.Conventionally, in the pupil plane of irradiator intensity distributions at least outside and/or inside diameter ranges (be conventionally called respectively σ-outside and σ-Nei) can be regulated.In addition, irradiator IL can comprise multiple other parts, such as integrator IN and condenser CO.This irradiator can be used to regulate radiation beam, to have homogeneity and the intensity distributions of expectation in its transversal section.
It is upper that this radiation beam PB is incident on the patterning apparatus MA being kept by supporting construction MT, and form pattern by patterning apparatus.Through after patterning apparatus, radiation beam PB is through optical projection system PL, and optical projection system PL focuses on light beam on the C of target portion of substrate W.The immersion hood IH being further described below is fed to the last element of optical projection system PL and the space between substrate W by immersion liquid.In one embodiment, substrate table WT and immersion hood IH are connected to can for example, provide the voltage generator V (for example battery) of pressure reduction at (, between the sensor board and immersion hood IH at substrate table WT) between substrate table WT and immersion hood IH.
For example, by means of the second steady arm PW and position transducer IF (, interferometric measuring means, linear encoder or capacitive transducer), substrate table WT can accurately be moved, for example, different target position C is positioned in the path of radiation beam PB.Similarly, for example, from the machine (information) retrieval of mask storehouse or during describing, with respect to the path of radiation beam PB, the first steady arm PM and another location sensor (not clearly indication in Fig. 1) can be used to accurately locate patterning apparatus MA.In a word, the motion of supporting construction MT can realize by means of long stroke module (coarse positioning) and short stroke module (fine positioning), and it forms a part of the first steady arm PM.Similarly, the motion of substrate table WT can realize by long stroke module and short stroke module, and it forms a part of the second steady arm PW.In the situation of ledex (relative with scanner), supporting construction MT can only be connected to short stroke actuating device, maybe can be fixed.Patterning apparatus MA and substrate W can be used alignment mark M1, M2 and substrate alignment mark P1, and P2 aims at.Although shown in substrate alignment mark take dedicated target portions, the space (these are known as road plan (scribe lane) alignment mark) that they can be between target portion.
Similarly, in the situation that more than tube core is provided by patterning apparatus MA therein, alignment mark can be between tube core.
Shown device can be used at least one in following pattern:
1. in step mode, it is static that supporting construction MT and substrate table WT are held essence, and the whole pattern that simultaneously gives radiation beam is projected in the C of target portion upper (that is, single static exposure) simultaneously.Then, this substrate table WT moves along X and/or Y-direction, so that: the C of different target portion can be exposed.In step mode, the full-size of exposure field has limited the size of the C of target portion of imaging in single static exposure.
2. in scan pattern, supporting construction MT and substrate table WT are scanned simultaneously, and the pattern that simultaneously gives radiation beam is projected in the C of target portion upper (that is, single dynamic exposure).Substrate table WT can be determined by (dwindling) expansion and the image inversion feature of optical projection system PL with respect to speed and the direction of supporting construction MT.In scan pattern, the full-size of exposure field has limited the width (along non-description direction) of the target portion in single dynamic exposure, and the length of scanning motion has been determined the height (along describing direction) of target portion.
3. in other pattern, supporting construction MT is kept static by essence, and to keep patterning apparatus able to programme, and substrate table WT is moved or scans, and the pattern that simultaneously gives radiation beam is projected on the C of target portion.Adopt this pattern, conventionally, use impulse radiation source, and after each motion of substrate table WT, or between scan period continuous pulses of radiation, patterning apparatus able to programme upgrades as required.This operator scheme can easily be applied to use the mask-free photolithography of patterning apparatus able to programme, all types of programmable mirror array as mentioned above.
Also can use combination and/or the variant of relevant above-described use pattern or diverse use pattern.
Fig. 2 has shown the embodiment of immersion hood IH.This immersion hood 10 forms the contactless sealing to substrate around the picture field of optical projection system, so that: immersion liquid 11 is limited to fill the space between the last element of substrate surface and optical projection system.Be positioned at optical projection system PL last element below and around the seal member 12 of the last element of optical projection system PL, form liquid pools.Immersion liquid 11 enter under optical projection system and seal member 12 in space.Sealing parts 12 extend in the summary top of the last element of optical projection system, and fluid level rises to the top of last element, to the buffering of liquid is provided.Sealing parts 12 have interior week, and in one embodiment, it closely meets the shape of optical projection system or its final element at upper end, and can be for example round.At bottom place, described interior week closely meets the shape of picture field, and rectangle for example, although this needs not to be necessary.
Utilize the sealing gland 16 between the bottom of seal member 12 and the surface of substrate W, this immersion liquid 11 is limited in immersion hood 10.This sealing gland is by forming such as air or the synthetic gas that waits, but in one embodiment, by nitrogen or inertia gas, formed, and described gas is provided to the gap between seal member 12 and substrate under pressure through entrance 15, and through the first outlet 14 extractions.To the overvoltage of gas access 15, first vacuum level of outlet 14 and the physical dimension in gap are set up, so that: the inside gas flow of high speed that has confined liquid.
Product
Utilize some device examples that current method and system can create for example to comprise: Micro Electro Mechanical System (" MEMS "), thin-film heads, integrating passive components, imageing sensor, integrated circuit (" IC ")---for example comprise power supply IC, analog IC and discrete IC---and LCDs.
Described specific embodiment of the present invention, be appreciated that for those skilled in the art, will easily occur maybe inspiring its many modifications, and therefore, the present invention's expection is only limited by the spirit and scope of following claim.
Claims (12)
1. a lithographic equipment, comprising:
Optical projection system, described optical projection system by the image projection of patterning to substrate;
For supporting the substrate table of described substrate;
Immersion hood, for being restricted to immersion liquid in the final element of described optical projection system and the space between described substrate; And
Voltage generator, described voltage generator is functionally connected to described substrate table and is functionally connected to the immersion hood of described lithographic equipment; Described voltage generator can described substrate table be subject between region that streaming potential affects and described immersion hood, set up voltage difference.
2. lithographic equipment according to claim 1, wherein, described immersion hood forms the contactless sealing to described substrate.
3. lithographic equipment according to claim 2, wherein, described immersion hood comprises air seal, is used to form described contactless sealing.
4. lithographic equipment according to claim 1, wherein, described substrate table comprises sensor or sensor board.
5. lithographic equipment according to claim 4, wherein, described voltage generator can be set up voltage between described sensor or sensor board and described immersion hood.
6. lithographic equipment according to claim 4, wherein, described sensor comprises one or more in imageing sensor, dose sensor and aberration sensor.
7. lithographic equipment according to claim 4, wherein, described sensor comprises one or more metals.
8. lithographic equipment according to claim 7, wherein, described sensor comprises chromium.
9. lithographic equipment according to claim 4, wherein, described sensor comprises titanium nitride coating.
10. lithographic equipment according to claim 1, wherein, described voltage difference is at least 0.1V.
11. lithographic equipments according to claim 1, wherein, described voltage difference is at most 50V.
12. 1 kinds of device making methods, comprising:
By substrate supports on substrate table;
By optical projection system, pattern is transferred to substrate from patterning apparatus;
Immersion liquid is limited in to the final element of described optical projection system and the space between described substrate; And
Between the immersion hood of lithographic equipment and the region that affected by streaming potential of described substrate table, set up voltage difference, described immersion hood and described substrate table are connected to voltage generator.
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| CN201110325529.7A Active CN102385260B (en) | 2005-02-10 | 2006-02-06 | Immersion liquid, exposure apparatus, and exposure process |
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