CN102324405A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN102324405A
CN102324405A CN2011102657283A CN201110265728A CN102324405A CN 102324405 A CN102324405 A CN 102324405A CN 2011102657283 A CN2011102657283 A CN 2011102657283A CN 201110265728 A CN201110265728 A CN 201110265728A CN 102324405 A CN102324405 A CN 102324405A
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semiconductor device
solder
class
link
cu6sn5
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CN102324405B (zh
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池田靖
中村真人
松吉聪
佐佐木康二
平光真二
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Hitachi Power Semiconductor Device Ltd
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Hitachi Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457—Solder materials or compositions; Methods of application thereof
    • H05K3/3463—Solder compositions in relation to features of the printed circuit board or the mounting process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
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Abstract

本发明提供一种半导体装置，其特征在于，所述半导体装置具有半导体元件、被连接部件和连接所述被连接部件的连接部件，且所述连接部件为钎料，所述被连接部件在与所述连接材料连接的表面上形成有所述Ni层，所述连接部件为Sn类钎料，含有Cu6Sn5化合物和以Cu6Sn5之外的成分为主成分的Sn类钎料相，所述Ni层的与所述连接部件连接的区域被所述Cu6Sn5化合物被覆，所述Cu6Sn5化合物一方面与所述Sn类钎料相连接，另一方面通过所述Ni层与所述被连接部件连接。

Description

半导体装置的制造方法
本申请是申请日为2006年8月8目、申请号为200610115401.7、发明名称为“半导体装置及半导体装置的制造方法”的申请的分案申请。
技术领域
本发明涉及用于半导体装置的钎料、使用该钎料制得的半导体装置及其制造方法，具体而言，涉及用于将交流发电机的交流输出转换为直流输出的车载交流发电机(交流发电机)的半导体装置。
背景技术
用于车载交流发电机的半导体装置，如专利文献1(特开平07-221235号公报)所示，为了耐受严格的温度循环而具有减小由半导体元件与电极的热膨胀率之差产生的热应力的结构。另外，由于设置在发动机附近，所以要求半导体装置具有200℃的耐热温度。因此使用例如固相线为300℃左右的高Pb钎料(如含有95重量％的Pb和5重量％的Sn、固相线为300℃、液相线为314℃的Pb-Sn合金)连接半导体元件。
但是，从环保观点看，要求开发出使用排除了环境负荷大的Pb的连接材料的半导体装置。作为不含有Pb、熔点与高Pb钎料相接近的无Pb钎料，有Au-20Sn(共晶、280℃)、Au-12Ge(共晶、356℃)、Au-3.15Si(共晶、363℃)等Au类材料，但其成本极高。另外，如果使用了Au含量较低的Au-20Sn，因其是硬钎料，所以存在着大面积连接时无法充分缓和应力、半导体元件易破损的缺点。
作为其他无Pb钎料，有熔点为200℃或200℃以上的Sn-3Ag-0.5Cu等Sn类中温系钎料，广泛用于将零件组装到基板上，在150℃或150℃以下具有良好的连接可靠性。但是，长时间保持在200℃或200℃以上的使用环境中时，由于在连接界面处界面反应加剧，导致空隙形成及金属间化合物层成长等，由此引起连接可靠性降低。
针对上述问题，作为抑制Sn类钎料的界面反应的方法，如专利文献2(专利第3152945号公报)已报导，通过使用组成为Cu：0.1～2重量％、Ni：0.002～1重量％、其余为Sn的Sn类钎料，可以在通过添加Cu来抑制被连接材料的铜腐蚀的同时，通过添加Ni来抑制连接界面上Cu6Sn5、Cu3Sn等金属间化合物的成长。另外，专利文献3(特开2002-280417号公报)报导，钎料凸点形成中，在被连接材料表面上设置2种能与Sn类钎料反应生成金属间化合物的金属层，通过将Sn类钎料球与该金属层连接，在连接界面上形成由包括Sn在内的2～3种元素构成的金属间化合物薄层，从而能够抑制界面反应。
发明内容
但是，现有的技术中存在着以下问题，即，对界面反应的抑制不充分，连接可靠性低。特别是用于在高温下使用的车载交流发电机(交流发电机)的半导体装置，利用现有的技术来抑制界面反应是很困难的。
即，虽然在上述专利文献2的情况下，可以多少期待通过添加Ni来抑制界面反应，但因Cu6Sn5、Cu3Sn化合物常与Cu及Sn类钎料相接触，所以在200℃或200℃以上的高温下界面反应加剧。使Cu-Sn化合物继续生长，在界面上形成空隙等，结果导致连接可靠性降低。
另一方面，在上述专利文献3的情况下，可以认为是由于在最接近钎料处形成的金属间化合物在Sn类钎料与金属层之间形成隔离层，从而强化了抑制界面反应的效果，但是，由于必须预先在被连接材料上设置2层金属层，即，第1金属层和第2金属层，因此，存在以下问题：增加镀敷工序、选择性的局部镀敷导致高成本；采用不能设置电极的结构时难以形成金属层等。另外，由于连接时必须使在连接面最表面处形成的金属层与Sn类钎料反应，形成隔离层，所以有可能存在以下问题：如果最表面上形成的金属层较厚，则连接时残留有未反应的最表面金属层，不能充分发挥隔离层的效果；为了使最表面金属层完全反应而必须进行延长连接时间等工序的调整。如果最表面金属层较薄，则用于抑制界面反应的隔离层变薄，在200℃或200℃以上的高温下可能无法充分抑制界面反应。而且，如图2所示，在与Sn类钎料的反应中，连接面最表层上形成的层(如Cu层)15的未反应部分残留·露出时，会出现该露出部分发生氧化、腐蚀的问题。另一方面，如果如图3所示，为避免连接面最表面层的残留而进行局部镀敷等，在局部设置连接面最表面层，则Sn类钎料可能会润湿扩展到其下层的金属层(如Ni层)11。此时，有可能在上述层之间形成金属间化合物(如Ni-Sn化合物)16，在该部分发生界面反应，并伴随体积变化而生成空隙。
本发明提供半导体元件的连接材料，所述连接材料环境负荷小，成本低，即使在200℃或200℃以上的高温下长时间使用也可保持连接可靠性，同时，提供使用上述连接材料的半导体装置及车载交流发电机。
以下对本申请公开的发明中的代表性发明的概要进行说明。
(1)一种半导体装置，所述半导体装置具有：半导体元件；使用第一连接材料连接在半导体元件的第一面上的支承电极；使用第二连接材料连接在上述支承电极所支承的上述半导体元件的第二面上的引线电极，其特征为，所述支承电极的连接部与所述引线电极的连接部均实施了Ni类镀敷，所述第一连接材料和所述第二连接材料是Cu6Sn5相含量比共晶组成多的Sn类钎料。
(2)一种半导体装置，所述半导体装置具有：半导体元件；使用第一连接材料连接在半导体元件的第一面上的支承电极；使用第二连接材料连接在上述支承电极所支承的上述半导体元件的第二面上的引线电极，其特征为，所述支承电极的连接部与所述引线电极的连接部均实施了Ni类镀敷，所述第一连接材料和所述第二连接材料是在室温到200℃范围内含有Cu6Sn5相的Sn类钎料。
(3)一种半导体装置，所述半导体装置具有：半导体元件；通过第一连接部件连接在半导体元件的第一面上的支承电极；使用第二连接部件连接在上述支承电极所支承的上述半导体元件的第二面上的引线电极，其特征为，在所述支承电极与所述第一连接部件的界面及所述第一连接部件与所述半导体元件的界面处具有Ni类镀层和Cu-Sn化合物层，在所述引线电极与所述第二连接部件的界面及所述第二连接部件与所述半导体元件的界面处具有Ni类镀层和Cu-Sn化合物层。
(4)一种车载交流发电机，其特征为，所述车载交流发电机搭载了上述(1)～(3)中的任一项所述的半导体装置。
本发明可提供一种车载交流发电机，所述车载交流发电机通过搭载所述半导体装置，即便在将受发动机的回转驱动力而转动的电枢绕组产生的交流电转换为直流电的车载交流发电机的通常使用环境，即，200℃或200℃以上的高温下，也可以保持半导体装置的连接可靠性，结果为即便在高温下也不引起接触不良等问题，并能耐受更高温环境下的配置。
(5)一种半导体装置的制造方法，所述半导体装置具有半导体元件；通过在室温到200℃范围内含有Cu6Sn5相的Sn类钎料与半导体元件的一侧相连接的支承电极，所述支承电极实施了Ni类镀敷；通过在室温到200℃范围内含有Cu6Sn5相的Sn类钎料与所述支承电极上所支承的上述半导体元件的另一侧相连接的引线电极，所述引线电极实施了Ni类镀敷，所述半导体装置制造方法的特征为，使用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料的连接工序是在220～450℃、还原性环境气体中进行的。
(6)一种半导体装置的制造方法，所述半导体装置具有：半导体元件；利用连接部件及实施了Ni类镀敷的应力热膨胀率差缓冲材料连接在半导体元件的一侧的支承电极，所述支承电极实施了Ni类镀敷；通过连接部件与上述支承电极所支承的上述半导体元件的另一侧相连接的实施了Ni类镀敷的引线电极，所述半导体装置使用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料作为连接部件，所述制造方法的特征为：使用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料的连接工序是在220～450℃、还原性环境气体中进行的。
(7)一种无Pb钎料连接材料，其特征为，所述无Pb钎料连接材料是Cu6Sn5相含量比共晶组成多的Sn类钎料。
(8)一种无Pb钎料连接材料，其特征为，所述无Pb钎料连接材料为在室温到200℃范围内含有Cu6Sn5相的Sn类钎料。
(9)一种无Pb钎料连接材料，其特征为，所述无Pb钎料连接材料为内部含有Cu6Sn5相的Sn类钎料。
附图说明
图1是模式地表示本发明连接状况的剖面图。
图2是模式地表示专利文献3中可能的连接状况的剖面图。
图3是模式地表示专利文献3中可能的连接状况的剖面图。
图4是模式地表示本发明的连接机构的剖面图。
图5是表示可作为热膨胀率差缓冲材料使用的各种材料的杨氏模数及屈服应力的图。
图6是模式地表示本发明的连接机构的剖面图。
图7是模式地表示本发明的连接机构的剖面图。
图8表示本发明的半导体装置的具体实施方式之一例。
图9表示本发明的半导体装置的具体实施方式之一例。
图10是模式地表示连接界面的空隙形成状况的剖面图。
图11是模式地表示连接界面的空隙形成状况的剖面图。
图12是模式地表示高温放置试验后的连接界面的剖面图。
图13是模式地表示高温放置试验后的连接界面的剖面图。
图14A、图14B是Cu-Sn二相状态图。
图15表示本发明的半导体装置的具体实施方式之一例。
图16表示本发明的半导体装置的具体实施方式之一例。
图17表示本发明的半导体装置的具体实施方式之一例。
具体实施方式
首先，根据图4对本发明所述的连接材料和连接机构进行说明。
本发明所述的连接材料之一例是在室温到200℃范围内含有Cu-Sn化合物(如Cu6Sn5)相10的Sn类钎料箔17。通过使用钎料箔17连接设置有Ni类镀层11的被连接材料12，在钎料箔17中以相的形式散布的Cu6Sn5相10在Ni类镀层11上析出或移动到Ni类镀层11上，形成以Cu-Sn化合物为主体的化合物层10。其结果为，即便长时间暴露在200℃或200℃以上的高温下，由于以Cu-Sn化合物为主体的化合物层10成为Ni类镀层11与Sn类钎料的隔离层，从而能抑制由连接界面反应引起的化合物层的成长和随之产生的空隙。
本发明的连接机构中，因在被连接材料上预先设置至少一层Ni、Ni-P、Ni-B等Ni镀层，故较少工序数即可完成连接。另外，本发明的连接机构中，所形成的隔离层的厚度依赖于钎料箔中所含的Cu-Sn化合物相的量，因此可通过Cu-Sn化合物量的增减来调节隔离层的厚度。而且，如图1所示，在钎料润湿的连接界面上，钎料中的Cu-Sn化合物10在Ni类镀层11上主动析出或移动至Ni类镀层11上，形成Cu-Sn化合物的隔离层，故连接后的连接部不会出现如图2和图3所示的问题。
此处，利用表示Sn-Cu二相状态图的图14来说明像本发明的连接材料那样处于以相的形式含有Cu-Sn化合物的状态和在室温到200℃范围内含有Cu6Sn5相的Sn类钎料的状态的条件。
如果含Cu量比Sn-0.9Cu少，则钎料熔融并凝固时，含量比共晶组成多的Sn作为初晶首先析出，最后Sn和Cu6Sn5凝固成共晶组织。此时，Cu6Sn5在连接内部的晶粒边界等处分散并析出，故未在Ni类镀层上析出形成隔离层。因此，无法获得耐热性。另一方面，如果含Cu量比Sn-0.9Cu多，则钎料熔融并凝固时，Cu6Sn5相首先析出。此时，由于Cu6Sn5在Ni镀层上优先析出，因此形成了Cu-Sn化合物的隔离层。最后，Sn和Cu6Sn5凝固成共晶组织。采用上述机构形成了Cu-Sn化合物的隔离层。
即，作为本发明的连接材料，只要选择Cu6Sn5相含量比共晶组织多的组成即可。如果是Sn-Cu两相系统，则只要含Cu量在0.9wt％或0.9wt％以上即可，但当含有其他元素时，由于合金系不同共晶组成也不同，故任意场合，只要选择Cu6Sn5相含量比共晶组成多的连接材料即可。另外，由于通常使用的Sn-3Ag-0.5Cu或Sn-0.7Cu与共晶组成相比，Cu6Sn5相较少，故Ni类镀层上没有形成隔离层。
以上对本发明的连接材料和连接机构进行了说明，但是连接材料的使用形态并不限定于箔状，如图6和图7所示，膏状或线状等任一种形状的连接材料在连接后均可在Ni类镀层上形成Cu-Sn化合物的隔离层。可根据连接环境来适当地选择使用形态。
需要说明的是，为得到良好的润湿性，在室温到200℃范围内含有Cu6Sn5相的Sn类钎料优选液相线温度在连接温度以下的组成。
其次，通过表示用于车载交流发电机的半导体装置的图8和图9对使用了本发明的连接材料的半导体装置及其制造方法的实施方式之一例进行说明。
如图8所示的半导体装置，具有：半导体元件1；通过使用本发明的连接材料形成的连接部件2连接在半导体元件1的第一面上的引线电极7，所述引线电极7的连接部实施了Ni类镀敷；通过由本发明的连接材料连接的连接部件4与半导体元件1的第二面相连接的热膨胀率差缓冲材料5，所述热膨胀率差缓冲材料5的连接部实施了Ni类镀敷；通过由本发明的连接材料连接的连接部件6与热膨胀率差缓冲材料5的另一面相连接的支承电极3，所述支承电极3的连接部实施了Ni类镀敷。
通过使用本发明的连接材料进行连接，可提供即便在高温下使用也能抑制界面反应、且具有连接可靠性的半导体装置。需要说明的是，不必在所有的连接部均使用本发明的连接材料，可以部分使用其他材料，但是，从连接可靠性的观点考虑，优选将本发明的连接材料用于所有的连接部。此时，只要是Cu6Sn5相的含量比共晶组成多的连接材料即可，可以使用任何材料，而且，各连接部也可以使用不同的材料。
此处，作为热膨胀率差缓冲材料5，可使用Al、Mg、Ag、Zn、Cu、Ni中的任一种。这些金属的屈服应力小，易惰性变形。通过在连接部赋予上述金属，可缓和在连接后冷却时以及在温度循环时由于被连接材料的热膨胀率之差而在连接部产生的应力。此时，如图5所示，优选屈服应力在75MPa或75MPa以下。如果屈服应力在100MPa或100MPa以上，则无法充分缓和应力，半导体元件有时发生破裂。厚度优选30～500μm。如果厚度为30μm以下，则无法充分缓和应力，半导体元件与金属间化合物层有时出现裂缝。厚度在500μm以上时，有可能因Al、Mg、Ag、Zn的热膨胀率比Cu制的电极大，使热膨胀率的效果变大，导致可靠性降低。
另外，作为热膨胀率差缓冲材料5，可使用Cu/殷钢合金/Cu复合材料、Cu/Cu2O复合材料、Cu-Mo合金、Ti、Mo、W中的任一种。通过所述的热膨胀率差缓冲材料5，可缓和半导体元件与Cu电极之间的热膨胀率之差在温度循环时和连接后冷却时产生的应力。此时，如果厚度过薄，则无法充分缓和应力，导致半导体元件与金属间化合物层出现裂缝，故优选厚度为30μm或30μm以上。
与高铅钎料相比，Sn类钎料的热导率高，所以能够实现半导体装置的低电阻化和高放热化，如图9所示，可以省略热膨胀率差缓冲材料5，但是为了即便使用比高铅钎料更硬的Sn类钎料也应得到充分的连接可靠性，优选插入热膨胀率差缓冲材料5。
作为各被连接材料所设的Ni类镀层，如上所述，使用Ni、Ni-P、Ni-B等即可，在上述镀层上可进一步进行镀Au、镀Ag。这样可提高润湿性。此种情况下，由于Au、Ag镀层在连接时全部向钎料内部扩散，可在底层的Ni类镀层上形成Cu-Sn化合物的隔离层。
以下对半导体装置的制造方法进行说明。按照图8所示的部件及连接部件的顺序，即，在支承电极3上重叠下述部件：在室温到200℃范围内含有Cu6Sn5相的Sn类钎料箔6；热膨胀系数为11×10-6/℃、直径为6.8mm、厚度为0.6mm的由镀Ni CIC(Cu/Inver/Cu)覆层材料形成的热膨胀率差缓冲材料5；在室温到200℃范围内含有Cu6Sn5相的Sn类钎料箔4；直径为6mm、厚度为0.2mm的镀Ni半导体元件1；在室温到200℃范围内含有Cu6Sn5相的Sn类钎料箔2；直径为4.5mm、厚度为0.2mm的带有Cu板的Cu引线电极7，然后将上述层合部件放入定位夹具内，利用热处理炉，在氮气中混有50％氢气的还原性环境气体中，以380℃、1分钟的温度条件进行连接，然后在连接部周围注入硅橡胶8，使其硬化，制造半导体装置。需要说明的是，连接工序如果在220～450℃、还原性环境气体中进行，即使不使用焊剂也可以进行良好的连接。
实际测定该半导体装置经温度循环试验和高温放置试验后的半导体元件及各部件之间的连接强度，结果如表1所示。
[表1]
Figure BSA00000571191600091
强度为初始连接强度的80％或80％以上时用○标记，小于80％时用×标记。由上述结果可知，实施例1～6中的所有半导体装置经-40℃(30min.)/200℃(30min.)500次循环的温度循环试验后，强度均能保持在初始连接强度的80％或80％以上。另外，在210℃、1000h的高温放置试验后，实施例1～6的所有半导体装置的强度也能保持在初始连接强度的80％或80％以上。而且，试验前与试验后的热阻变化在10％以内。图12中，作为其中之一例，给出使用Sn-5Cu钎料连接的样品在210℃、1000h高温放置后的连接界面的剖面图。由于Cu-Sn化合物隔离层的存在，使得高温放置后Ni层未消失仍有残留，也未观察到体积变化而形成的空隙。
以上已说明了使用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料对全体结构同时进行连接的工序，另外，还可以分成几个部件进行连接，例如，首先制作使用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料在热膨胀率差缓冲材料5上连接上述半导体元件1及带有Cu板的引线电极7的部件，然后利用在室温到200℃范围内含有Cu6Sn5相的Sn类钎料将上述部件连接在支承电极3上等。
按照如图9所示的部件与连接部件的顺序，即，在支承电极3上，重叠下述部件：在室温到200℃范围内含有Cu6Sn5相的Sn类钎料箔，即连接部件4；直径为6mm、厚度为0.2mm的镀Ni半导体元件1；在室温到200℃范围内含有Cu6Sn5相的Sn类钎料箔，即连接部件2；直径为4.5mm、厚度为0.2mm、带有Cu板的Cu引线电极7；然后将将上述层合部件放入定位夹具内，利用热处理炉，在氮气中混有50％氢气的还原性环境气体中，以450℃、5分钟的温度条件进行连接，然后在连接部周围注入硅橡胶8，使其硬化，制造半导体装置。
实际测定该半导体装置经温度循环试验和高温放置试验后的半导体元件及各部件之间的连接强度，结果如表1所示。强度为初始连接强度的80％或80％以上时用○标记，小于80％时用×标记。由上述结果可知，实施例7～12中的所有半导体装置经-40℃(30min.)/200℃(30min.)500次循环的温度循环试验后，强度能保持在初始连接强度的80％或80％以上。另外，在210℃、1000h的高温放置试验后，实施例7～12的所有半导体装置的强度也能保持在初始连接强度的80％或80％以上。并且，试验前与试验后的热阻变化在10％以内。
下面，作为比较例，对Cu6Sn5相含量不多于共晶组成的连接材料的测定结果进行说明。连接结构与实施例1～6相同。其结果如表1所示，强度为初始连接强度的80％或80％以上时用○标记，小于80％时用×标记。在比较例1、2中，经-40℃(30min.)/200℃(30min.)500次循环的温度循环试验后，强度均能保持在初始连接强度的80％或80％以上。但是经210℃、1000h的高温放置试验后，比较例1、2的强度都小于初始连接强度的80％。观察其连接剖面，发现在连接界面上形成如图10、11所示的空隙14。认为高温放置导致界面反应加剧，伴随化合物层成长的体积变化形成空隙，导致连接强度降低。图13中，作为其中之一例，给出用Sn-3Ag-0.5Cu钎料连接的样品在210℃、1000h高温放置后的连接界面的剖面图。因未形成Cu-Sn化合物的隔离层，所以Sn与Ni反应，Ni层完全消失，且底层的Cu也与Sn反应，使Cu-Sn化合物层变厚。其结果为，体积变化较大而形成空隙，无法保持良好的连接状态。
比较例3、4经-40℃(30min.)/200℃(30min.)500次循环的温度循环试验及210℃、1000h的高温放置试验后，强度都小于初始连接强度的80％。比较例1、2经-40℃(30min.)/200℃(30min.)500次循环的温度循环试验后，强度均保持在初始连接强度的80％或80％以上，但是经210℃、1000h的高温放置试验后，强度都小于初始连接强度的80％，未得到连接可靠性。
观察其连接剖面，发现在连接界面上形成如图10、11所示的空隙14。认为在高温放置下导致界面反应加剧，伴随化合物层成长的体积变化形成空隙，导致连接强度降低。
比较例5是利用高铅钎料的比较例，任何一个试验都显示了良好的结果。
下面，利用图15对使用本发明的连接材料的半导体装置的其他形态进行说明。图15是印刷基板上的部件组装的例子，具有下述部件：印刷基板102；使用本发明的连接材料连接并组装在上述印刷基板102上的表面组装部件101；使用本发明的连接材料连接并组装在上述印刷基板102上的芯片103；使用本发明的连接材料连接并组装在上述印刷基板102上的插入组装部件104。图中未示出，但各个连接面均实施了Ni类镀敷。通过使用本发明的连接机构进行组装，可提供在高温下也能抑制界面反应、连接可靠性高的半导体装置。
另外，图15同时安装了表面组装部件101、芯片103、插入组装部件104，但也可以只安装其中任意一个或二个。在部分连接中也可使用Sn-3Ag-0.5Cu等其他钎料材料。
下面，利用图16对使用本发明的连接材料的半导体装置的其他形态进行说明。
如图16所示的半导体装置，具有下述部件：半导体元件1；用本发明的连接材料连接在半导体元件1上的框架105；通过引线108与半导体元件1上所设的电极(图中未示出)电连接的外部引线电极107；用于覆盖半导体元件1而设置的模制树脂。图中未示出，但各个连接面均进行了Ni类镀敷。使用本发明的连接机构，可提供在高温下也能抑制界面反应、连接可靠性高的半导体装置。
利用图17对其他半导体装置的形态进行说明。
如图17所示的半导体装置，是以RF模块等为代表的构造，具有下述部件：模块基板109；用本发明的连接材料连接在所述模块基板上的表面组装部件101；用本发明的连接材料连接在所述模块基板上的半导体元件1；用本发明的连接材料连接在所述模块基板上的芯片部件；设置在所述模块基板1的背面上的钎料球110。图中虽未示出，但各个连接面均实施了Ni类镀敷。使用本发明的连接机构，可提供在高温下也能抑制界面反应、连接可靠性高的半导体装置。
另外，图15同时安装了表面组装部件101、芯片部件103、插入组装部件104，但也可以只安装其中任意一个或二个。在部分的连接中也可使用Sn-3Ag-0.5Cu等其他钎料。
以上，对半导体的实施方式进行了几点说明，但本发明并不限定于此，在不脱离本发明主旨的前提下，可进行各种变更。例如，可用于大功率晶体管、大功率IC、IGBT基板、RF模块等前端模块、车辆用功率模块等的管芯焊接等。另外，连接中所用的本发明的连接材料，只要是Cu6Sn5相含量比共晶组成多的Sn类钎料即可，不限定其使用形式，可为对印刷基板的整平处理、对零件的浸泡、印刷、箔、线等任一种方法。
本发明能提供环境负荷小且具有200℃或200℃以上的耐热性的半导体装置。

Claims (13)

1.一种半导体装置，其特征在于，
所述半导体装置具有半导体元件、被连接部件和连接所述被连接部件的连接部件，且所述连接部件为钎料，
所述被连接部件在与所述连接材料连接的表面上形成有所述Ni层，
所述连接部件为Sn类钎料，含有Cu6Sn5化合物和以Cu6Sn5之外的成分为主成分的Sn类钎料相，
所述Ni层的与所述连接部件连接的区域被所述Cu6Sn5化合物被覆，
所述Cu6Sn5化合物一方面与所述Sn类钎料相连接，另一方面通过所述Ni层与所述被连接部件连接。
2.如权利要求1所述的半导体装置，其特征在于，
所述被连接部件的与所述连接部件连接的整个区域，被所述Ni层及与所述Cu6Sn5化合物的叠层覆盖。
3.如权利要求1所述的半导体装置，其特征在于，
所述被连接部件的与所述连接部件连接的整个区域，被所述Ni层覆盖。
4.如权利要求1所述的半导体装置，其特征在于，
所述Cu6Sn5化合物是保护所述Ni层及所述被连接部件的隔离层，使它们与所述Sn类钎料相隔离。
5.如权利要求1所述的半导体装置，其特征在于，
所述Sn类钎料相是Cu为0.9wt％以上的Sn-Cu类钎料。
6.如权利要求1所述的半导体装置，其特征在于，
所述Sn类钎料相是Cu为3～7wt％以上的Sn-Cu类钎料。
7.如权利要求1所述的半导体装置，其特征在于，
所述连接部件是Sn-Cu二相钎料。
8.如权利要求1所述的半导体装置，其特征在于，
所述连接部件连接所述被连接部件和所属半导体元件。
9.如权利要求1所述的半导体装置，其特征在于，
所述连接部件连接所述被连接部件和其他被连接部件。
10.如权利要求8或9所述的半导体装置，其特征在于，
所述被连接部件为Cu制。
11.如权利要求8或9所述的半导体装置，其特征在于，
所述被连接部件为电极。
12.如权利要求9所述的半导体装置，其特征在于，
所述其他被连接部件是热膨胀率差缓冲材料，所述热膨胀率差缓冲材料的热膨胀率比所述被连接部件小、比所述半导体元件大。
13.如权利要求9所述的半导体装置，其特征在于，
所述其他被连接部件在与所述连接部件连接的表面上形成Ni层，
所述连接部件为Sn类钎料，含有Cu6Sn5化合物和以Cu6Sn5之外的成分为主成分的Sn类钎料相，
所述Ni层的与所述连接部件连接的区域被所述Cu6Sn5化合物被覆，
所述Cu6Sn5化合物一方面与所述Sn类钎料相连接，另一方面通过所述Ni层与所述其他被连接部件连接。
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