CN101393901B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN101393901B
CN101393901B CN2008102134946A CN200810213494A CN101393901B CN 101393901 B CN101393901 B CN 101393901B CN 2008102134946 A CN2008102134946 A CN 2008102134946A CN 200810213494 A CN200810213494 A CN 200810213494A CN 101393901 B CN101393901 B CN 101393901B
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mentioned
layer
semiconductor device
semiconductor element
connecting portion
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CN101393901A (zh
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池田靖
中村真人
松吉聪
佐佐木康二
平光真二
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Hitachi Power Semiconductor Device Ltd
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Hitachi Ltd
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Abstract

本发明提供了一种半导体装置，其利用耐热性200℃的连接方法，能够通过将Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡与Ni系层组合抑制界面反应和抑制在流过大电流时的半导体元件的连接部中的空洞形成，并且能够使用Sn系焊锡作为高铅焊锡的代替连接材料得到与高铅焊锡为同等的电和机械的特性。

Description

半导体装置
技术领域
本发明涉及使用了无铅焊锡材料的半导体装置及其制造方法，特别是涉及可在高温环境下放置的半导体装置、例如在将交流发电机的交流输出变换为直流输出的车载用交流发电机中使用的半导体装置。
背景技术
在作为可在高温环境下放置的半导体装置，将由例如用发动机的旋转驱动力旋转的电子线圈感应的交流变换为直流的车辆用交流发电机中使用的半导体装置中，如专利文献1(日本专利特开平7-221235号公报)、专利文献2(日本专利特开平7-161877号公报)、专利文献3(日本专利特开2002-142424号公报)、专利文献4(日本专利特开2002-261210号公报)、专利文献5(日本专利特开2002-359328号公报)中所示，作成了降低基于半导体元件与电极的热膨胀率的差的热应力以便耐受严格的温度循环的结构。此外，因为设置在发动机附近，故对半导体装置要求200℃的耐热温度。因此，在半导体元件的连接中使用例如固相线为300℃附近的高铅焊锡(例如包含95重量％的Pb和5重量％的Sn的固相线为300℃、液相线为314℃的Pb-Sn合金)。
但是，从环境保护的观点来看，越来越要求使用排除了环境危害大的铅的连接材料的半导体装置。作为不包含铅的具有接近于高铅焊锡的熔点的不使用铅的材料，有Au-20Sn(共晶，280℃)、Au-12Ge(共晶，356℃)、Au-3.15Si(共晶，363℃)等的Au系材料，但其成本极高。此外，在Au含有率比较少的Au-20Sn的情况下，由于是硬焊锡，故在大面积的连接中不能起到充分的应力缓冲作用，存在半导体元件容易破损的缺点。
此外，熔点大于等于200℃的Sn-3Ag-0.5Cu等的Sn系中温焊锡广泛地使用于将部件安装在基板上，在小于等于150℃下具有良好的连接可靠性。但是，如果长时间地保持在大于等于200℃的使用环境中，则在连接界面上进行界面反应，因空洞的形成和金属间化合物层的生长等缘故，存在连接可靠性下降的问题。除此以外，即使在功率模块或LED等中，起因于通电时的发热的连接界面上的空洞的形成也引起了连接可靠性下降。
Sn系焊锡的界面反应的方法，在专利文献6(日本专利第3152945号公报)中报告了，通过使用Cu：0.1～2重量％、Ni：0.002～1重量％、剩下的部分由Sn构成的Sn系焊锡，利用Cu的添加抑制被连接材料的Cu的侵蚀，同时利用Ni添加可抑制连接界面中的Cu6Sn5、Cu3Sn等的金属间化合物的生长的情况。此外，在专利文献7(日本专利特开2002-280417号公报)中报告了，在焊锡凸点的形成中，在被连接材料的表面上设置与Sn系焊锡反应而形成金属间化合物的两种金属层，由于在该处连接Sn系焊锡球而在连接界面上形成薄的由包含Sn的2～3种元素构成的金属间化合物层，从而可抑制界面反应的情况。
但是，在上述的现有技术中未考虑以下的方面，故难以应用于在高温环境下使用的半导体装置或因通电时的发热而被置于高温状态的半导体装置、特别是在车载用交流发电机中使用的半导体装置或功率模块。
在上述专利文献6的情况下，虽然通过添加Ni可抑制界面反应，但由于Cu6Sn5、Cu3Sn一直与形成化合物层的Cu和Sn系焊锡相接，故在大于等于200℃的高温下Cu-Sn化合物不断生长，存在可靠性下降的危险。
另一方面，在上述专利文献7的情况下，由于在焊锡最接近处形成的第1金属间化合物层成为Sn系焊锡与在第1金属间化合物层下形成的第2金属层的阻挡层，故可认为界面反应的抑制效果较大。但是，由于设置两种金属层，故镀覆工序增加。存在有选择地进行局部镀覆的成本高、在不能设置电极的结构的情况下金属层的形成变得困难等的问题。此外，由于有必要使在连接面最表面上形成的金属层在连接时与Sn系焊锡反应而成为阻挡层，故如果在最表面上形成的金属层厚，则存在产生下述的问题的可能性：在连接时未反应的最表面金属层残留下来，不能充分地得到阻挡层的效果，为了使最表面金属层完全反应，加长连接时间等的工艺的调整成为必要。另一方面，在最表面的金属层薄的情况下，用于抑制界面反应的阻挡层变薄，在大于等于200℃的高温下存在不能充分地抑制界面反应的危险。
此外，在交流发电机二极管那样有必要流过几十A的大电流的情况下，因电流的通/断的反复的缘故，在半导体元件连接部中存在生成图1那样的空洞的危险。这一点可认为是，在通电后半导体元件发热时在连接部中产生的温度梯度或应力集中等成为原因，连接部焊锡中存在的化合物移动，伴随于此，空穴在局部集中而成为空洞。
发明内容
本发明提供使用了下述的无铅焊锡的半导体装置及其制造方法：该无铅焊锡的环境危害小，成本低，即使在大于等于200℃的高温下长时间地使用也能维持连接可靠性，可抑制伴随大电流的通/断的半导体元件连接部周边的空洞生成。
如果简单地说明在本申请中公开的发明中的代表性的内容的概要，则如下所述。
(1)一种在构件上安装了半导体元件的半导体装置，其特征在于：连接上述构件与上述半导体元件的第一连接部具有：在上述构件上形成的第一Ni系层；在上述第一Ni系层上形成的以Cu-Ni-Sn化合物为主体的第一金属间化合物层；以及在上述第一金属间化合物层与上述半导体元件之间形成的Sn系焊锡层。
(2)如(1)中所述的半导体装置，其特征在于：上述第一连接部用Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡连接在上述构件上形成的上述第一Ni系层与上述半导体元件而构成。
(3)一种半导体装置，具有：半导体元件；经第一缓冲材料与上述半导体元件的第一面连接的支撑电极体；以及经第二缓冲材料与上述半导体元件的第二面连接的引线电极，其特征在于：连接上述半导体元件的第一面与上述第一缓冲材料的第一连接部具有：在上述半导体元件的第一面上形成的第一Ni系层；在上述第一Ni系层上形成的以Cu-Ni-Sn化合物为主体的第一金属间化合物层；以及在上述第一金属间化合物层与上述第一缓冲材料之间形成的Sn系焊锡层。
(4)如(3)中所述的半导体装置，其特征在于：上述第一连接部用Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡连接在上述半导体元件的第一面上形成的上述第一Ni系层与上述第一缓冲材料而构成。
(5)如(3)或(4)中所述的半导体装置，其特征在于：上述支撑电极体与上述第一缓冲材料的连接部用在200℃下含有Cu6Sn5相的Sn系焊锡连接而构成。
(6)如(1)中所述的半导体装置，其特征在于：上述构件是基底基板。
(7)如(1)中所述的半导体装置，其特征在于：上述构件是与上述半导体元件电连接的引线框。
根据通过如在附图中说明的本发明的优选实施例的更加详细的描述，本发明的上述和其它的目的、特征和优点会变得明显。
附图说明
图1是热疲劳试验后的半导体元件连接部的剖面图。
图2是示意性地示出本发明的焊锡连接部的剖面图。
图3是示出各种焊锡中的200℃放置时间与Ni镀层消失厚度的关系的图。
图4是示出各种焊锡中的热疲劳试验循环数与在半导体元件连接部上的空洞生成数的关系的图。
图5是示意性地示出热疲劳试验后的半导体元件连接部的剖面图。
图6是示意性地示出本发明的焊锡连接状况的剖面图。
图7是示意性地示出在专利文献7中公开的发明的情况下可引起的连接状况的剖面图。
图8是示意性地示出在专利文献7中公开的发明的情况下可引起的连接状况的剖面图。
图9是示出可作为热膨胀率差缓冲材料使用的各种材料的杨氏模量与屈服应力的图。
图10是示意性地示出本发明的使用焊锡膏连接的情况的焊锡连接部的剖面图。
图11是示意性地示出本发明的使用焊锡导线连接的情况的焊锡连接部的剖面图。
图12是示出本发明的第一实施方式的半导体装置的图。
图13是示出本发明的第一实施方式的半导体装置的变形例的图。
图14是示出本发明的第二实施方式的半导体装置的图。
图15是示出本发明的第三实施方式的半导体装置的图。
图16是示出本发明的第四实施方式的半导体装置的图。
图17是示出本发明的其它的实施方式的半导体装置的图。
图18是示出本发明的其它的实施方式的半导体装置的图。
图19是示意性地示出接合界面的空洞形成状况的剖面图。
图20是示意性地示出接合界面的空洞形成状况的剖面图。
图21是示出高温放置试验后的接合界面的剖面图。
具体实施方式
首先，说明作为本发明的特征的焊锡连接部的结构。
本发明的焊锡连接部2，如图2中所示，具有在被连接构件12上通过镀覆等形成的Ni系层11、在Ni系层11上形成的以Cu-Ni-Sn化合物为主体的化合物层10和Sn系焊锡层9而构成。利用该结构，由于以Cu-Ni-Sn化合物为主体的化合物层10起到Ni系层11与Sn系焊锡层9的阻挡层的功能，故即使被放置在高温下也能抑制界面反应，并抑制连接界面的化合物层的生长和伴随于此的空洞形成。例如在形成了Ni系层的被连接构件12相互间的连接中通过使用具有Cu-Ni-Sn化合物相的焊锡箔17来形成该化合物层10。
在此，说明对于形成本发明的焊锡连接部最佳的焊锡的组成。
图3示出各种无铅焊锡(Sn-3Ag-0.5Cu、Sn、Sn-3Cu、Sn-5Cu、Sn-7Cu)中的200℃放置时间与Ni镀层消失厚度的关系，关于Sn-3Ag-0.5Cu，因高温放置的缘故，Ni镀层消失显著地进行，但至于Cu浓度大于等于5质量％的情况，在200℃下几乎不进行界面反应。
在此，为了在用焊锡连接时得到良好的润湿，选择液相线温度为小于等于连接温度的组成的焊锡是较为理想的，但是，在该情况下，如果焊锡的Cu浓度比10质量％多，则由于液相线温度比450℃高，故存在在连接时损坏半导体元件的危险。另一方面，如果焊锡的Cu浓度比1质量％低，则在Ni镀层上几乎不形成扩散阻挡层，如图3的Sn和一般的不使用铅的焊锡、即Sn-3Ag-0.5Cu的情况那样，存在在200℃下界面反应显著地进行的危险。
因而，如果从Ni镀层消失厚度的观点来看，则作为对于形成本发明的焊锡连接部最佳的焊锡的组成，是Cu浓度在比1质量％多且比10质量％少的范围内，更为理想的是在比5质量％多且比10质量％少的范围内。
另一方面，图4示出各种无铅焊锡(Sn-3Ag-0.5Cu、Sn、Sn-5Cu、Sn-5Cu-0.15Ni)中的热疲劳试验的循环数与在半导体元件的连接部上的空洞生成数的关系，反复使35A的电流流过半导体元件以使半导体元件发热到200℃后停止通电冷却到30℃，进行了热疲劳试验。
如图4中所示，在纯Sn中几乎不生成空洞，而在Sn-Cu系和Sn-Ag-Cu系的焊锡中随着循环数的增加而生成空洞。这是由于，在上述热疲劳试验时的存在于焊锡连接部内的化合物相的移动与空洞生成有关。即，在Sn-Cu系焊锡的情况下，焊锡内的Cu6Sn5相越多，在热疲劳试验时的空洞生成量就越多，如果Cu6Sn5相少，则在Ni镀层上形成的扩散阻挡层变薄，在200℃下的抗高温性能下降。在200℃下含有Cu6Sn5相的Sn系焊锡中，为了在不减少焊锡内的Cu6Sn5相的情况下抑制热疲劳试验时的空洞生成，Ni的添加是有效的，如图4中所示，在Sn-Cu系焊锡中添加了Ni的情况下，与Sn-Cu系焊锡相比，空洞生成速度约慢2/3。
在此，在图5(a)中示出使用了Sn-Cu系焊锡连接了的半导体元件一侧连接界面的剖面照片，相对于此，在图5(b)中示出对其实施了900次循环的热疲劳试验后的连接界面的剖面照片，在图5(c)中示出使用Sn-Cu-Ni系焊锡连接并同样地实施了900次循环的热疲劳试验后的剖面照片。在Sn-Cu系焊锡的情况下，在连接后处于半导体元件连接界面的Cu-Sn化合物层(图5(a))在900次循环后化合物移动而变薄，在其附近生成了空洞(图5(b))。另一方面，在Sn-Cu-Ni系焊锡的情况下，与Sn-Cu系相比，化合物层残存下来，空洞生成量也少(图5(c))。这是由于，因Ni添加的缘故，化合物层对于热疲劳试验的稳定性提高，化合物难以移动。在半导体元件连接部以外的连接部中不生成这样的空洞。如果Ni的添加量比0.05质量％少，则几乎不能得到空洞抑制效果。此外，如果Ni的添加量比0.5质量％多，则由于液相线温度比450℃高，故在连接时半导体元件电极被焊锡侵蚀，进而因半导体元件本身被焊锡侵蚀等的缘故，存在损坏半导体元件的危险。
如上述分析的那样，如果从防止空洞发生的观点来看，作为对于形成本发明的焊锡连接部最佳的焊锡的组成，含有Ni是有效的，Ni浓度在比0.05质量％多且比0.5质量％少的范围内是较为理想的。
此外，在本发明中，最好预先利用镀覆等在被连接构件上至少形成Ni、Ni-P、Ni-B等的Ni系层，由于没有必要如专利文献7那样设置两种金属层，故可用最小限度的工序数来实施。
再有，在如专利文献7那样在被连接构件上形成的Ni镀层上预先再形成Cu层、利用与Sn系焊锡的反应形成化合物层的方法中，如图7中所示那样，由于在焊锡连接部以外Cu层15残存下来，并在高温下产生因氧化、湿度引起的腐蚀，故不能得到良好的连接部。即使在假定用局部镀覆等设置Cu层的情况下，在没有Cu层的部分中焊锡润湿扩展，如图8中所示那样，也形成了Ni镀层与Sn系焊锡直接反应的部分16。在该情况下，由于在没有Cu-Ni-Sn化合物的阻挡层的部分中因高温放置而进行界面反应，故存在产生伴随体积变化的空洞的危险。
另一方面，在本发明的情况下，如图6中所示那样，由于在焊锡润湿的连接界面上Sn系焊锡中的Cu-Ni-Sn化合物在Ni系层11上结晶、析出或移动而形成成为Ni系层11与Sn系焊锡层2的阻挡层的Cu-Ni-Sn化合物层10，故没有必要如专利文献7那样预先在被连接构件上设置多个单质金属的层，由于在连接后在形成了化合物层的区域以外，其它的单质金属层不会露出，故可得到连接可靠性优良的焊锡连接部。
再者，在Sn系焊锡中的Cu-Ni-Sn化合物在结晶、析出或移动而形成阻挡层的本发明中，由于阻挡层的厚度依赖于在焊锡中包含的化合物量，故通过调整该化合物量可容易地形成最佳的厚度的阻挡层。
再有，关于焊锡的供给方式，不限于焊锡箔17，即使是如图10中示出的焊锡膏18的方式或图11中示出的导线19的方式等，也同样地可形成图2的焊锡连接部，根据连接环境选择各种供给方法即可。
其次，说明具有上述的本发明的焊锡连接部的半导体装置的具体例。
本发明的第一实施方式如图12中所述的那样，是适用于车载用交流发电机的半导体装置，在进行了镀Ni的支撑电极体4上叠合Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡箔、在其上叠合进行了镀Ni的热膨胀率缓冲材料(Cu-Mo合金或Cu/因瓦合金/Cu复合材料)5、Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡箔、进行了镀Ni-P的半导体元件1、Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡箔、进行了镀Ni的热膨胀率缓冲材料(Mo)6、Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡箔和带有进行了镀Ni的Cu板的Cu引线电极体7，并放置在位置重合夹具内，用热处理炉在氮中混合了50％的氢的还原性气氛下以380℃、4分钟的温度条件进行连接，接着在连接部周边注入硅橡胶8后使其硬化，制造具有图2中示出的焊锡连接部2、3的半导体装置。
此时，进行了镀Ni-P或镀Ni的各构件与Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡的各焊锡连接部，如图2中所示，Cu-Ni-Sn化合物10在Ni系层上结晶、析出或移动，在Ni系层上形成以Cu-Ni-Sn化合物为主体的化合物层，起到Sn系焊锡层2与Ni系层11的阻挡层的功能，因此，可提供具有即使在大于等于200℃的高温下长时间地使用也能维持连接可靠性的焊锡连接部的半导体装置。再有，在焊锡连接工序中，虽然在连接界面上除Cu-Ni-Sn化合物外也形成Cu-Sn化合物，但从抑制空洞发生的观点来看，由于在Ni系层上的Cu-Ni-Sn化合物起到阻挡层的功能，故不成为问题。
在此，在第一实施方式中示出了在全部的焊锡连接部中使用图2中示出的焊锡连接结构的例子，但至少在与半导体元件的连接部中使用即可，在其它的构件间的连接部中，也可使用在从室温至200℃下含有Cu6Sn5相的Sn系焊锡进行连接。由于因焊锡中的Cu6Sn5相的析出等在Ni系层上形成Cu-Sn化合物层，能够高温耐热且抑制Ni系层消失，在空洞发生的影响不会成为问题的连接部中是有效的。
这样，在半导体元件的连接部中使用对于大电流难以生成空洞的Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡、在其它的连接部中使用具有200℃的高温耐热性的图3中所述的Sn-5Cu那样含有较多的Cu6Sn5相的Sn系焊锡的情况下，可得到因大电流的通/断而产生的半导体元件周边连接部的空洞抑制效果好、对于200℃下的高温放置的界面反应抑制效果好的半导体装置。
再有，作为本实施方式的制造方法，在上述中叙述了同时连接整体结构的工艺，但也可分成几个部件来连接。此外，在使用从在室温至200℃下含有Cu6Sn5相的Sn系焊锡和Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni焊锡这两者的情况下，最好在220～450℃、还原性或惰性气氛下来进行。通过在该环境下进行连接，在不使用助熔剂(flux)的情况下可进行良好的连接。此外，通过在惰性气氛下连接，可防止焊锡和构件的氧化，进行良好的连接。
此外，在本实施方式中示出了在半导体元件1与支撑电极体4之间、半导体元件1与引线电极7之间分别设置缓冲材料5、缓冲材料6的例子，但这些缓冲材料6不是必须的，如图13中所示，可只在半导体元件1与支撑电极体4之间使用缓冲材料5，也可以是在任何部位都不使用缓冲材料的方式。当然，设置缓冲材料这一点可减少起因于半导体元件1与支撑电极体4之间的热膨胀率差的应力，故即使使用比高铅焊锡硬的Sn系焊锡，也能防止半导体元件的破损，再者，在半导体元件1与引线电极7之间设置缓冲材料的情况下，除了可减少起因于这些热膨胀率差的应力外，由于还可减少焊锡和半导体元件上的应力负载，故当然可得到更高的连接可靠性。
在此，作为热膨胀差缓冲材料6，通过使用屈服应力小、容易进行塑性变形的金属，由于可在连接后的冷却时和热的负载变动时在连接部中对因被连接材料的热膨胀率差而发生的应力进行缓冲，故使用Al、Mg、Ag、Zn、Cu、Ni中的任一种即可。再有，此时，如图9中所示那样，由于在屈服应力大于等于100MPa的情况下不能充分地对应力进行缓冲，有时在半导体元件中发生破损，故屈服应力小于等于75MPa是较为理想的。此外，将缓冲材料的厚度定为30～500μm是较为理想的。在厚度小于等于30μm的情况下，不能充分地对应力进行缓冲，有时在半导体元件和金属间化合物中发生裂纹，在大于等于500μm的情况下，由于Al、Mg、Ag、Zn与Cu制的电极相比热膨胀率大，故热膨胀率的效果变得显著，可能使可靠性下降。
此外，作为其它的热膨胀差缓冲材料6，也可使用Cu/因瓦合金/Cu复合材料、Cu/Cu2O复合材料、Cu-Mo合金、Ti、Mo、W。在该情况下，在缓冲材料的厚度比30μm薄的情况下，由于不能充分地对应力进行缓冲，有时在半导体元件和金属间化合物中发生裂纹，故大于等于30μm是较为理想的。
其次，本发明的第二实施方式，如图14中所述的那样，是在印刷基板102上安装表面安装部件101、片状部件103和插入安装部件104而构成的半导体装置，在印刷基板的电极和引线部件等上形成Ni系层，通过用Sn-(1～10质量％)Cu-(0.05～0.5质量％)Ni或Sn-(5～10质量％)Cu-(0.05～0.5质量％)Ni来连接，由于形成图2中所述的焊锡连接部，故即使在高温环境下，也可提供连接可靠性高的半导体装置。在施加焊锡时，可用对印刷基板的平整(leveling)处理、对部件的浸渍、印刷等任一种方法来供给焊锡。再有，在本实施方式中，示出了在全部的连接部位中应用了本发明的焊锡连接部的例子，但不限于此，也可只在一部分中使用。
本发明的第三实施方式，如图15中所述的那样，是在发动机控制用等的车载模块等中使用的功率模块，具有下述部分而构成：半导体元件1；采用Cu、Al等的导线105与半导体元件1的电极电连接的、在陶瓷106的一个面上形成的Cu布线107；与陶瓷106的另一个面连接的Cu板108；以及与Cu板108连接的基底基板109，在半导体元件1与形成了Cu布线107的陶瓷106之间的连接和Cu板108与基底基板109的连接中应用了图2中示出的焊锡连接结构。
通过如本实施方式那样应用于半导体元件的模片键合(diebonding)，能在高温环境下抑制连接部的界面反应，同时也能抑制起因于通电时的发热的在连接部上的空洞生成。再有，图2中示出的焊锡连接结构至少被使用在通电时的发热大的半导体元件与设置了Cu布线的陶瓷之间即可，在Cu板与基底基板的连接中可使用其它的Sn系焊锡。
其次，本发明的第四实施方式是图16中所述的LED，具有下述部分而构成：光半导体元件1；采用Cu、Al等的导线105与光半导体元件1的电极电连接的引线框110；安装光半导体元件1的框体111；以及填充光半导体元件1的周围的透光性树脂112，与第三实施方式同样，在半导体元件1对引线框110的模片键合中可应用图2中示出的焊锡连接结构。在本实施方式中，也与第三实施方式同样，由于除了抑制高温环境下的界面反应外，也能抑制起因于通电时的发热的在连接部上的空洞生成，故可提供连接可靠性高的LED。
在Sn系焊锡层与Ni系层之间形成了以Cu-Ni-Sn化合物为主体的化合物层的阻挡层的焊锡连接部除了可应用于上述的实施方式外，还可应用于各种半导体装置。例如，如图17中所示那样，是用模塑树脂115密封的半导体装置，使用于由引线114和导线105电连接的半导体元件2与框113的模片键合，或如图18中所示那样，可使用于在具有凸点116的印刷基板102与表面安装部件101、半导体元件1、片状部件103的各自的连接中，也可应用于其它的功率晶体管、功率IC、IGBT基板、RF模块等的前端模块等。
再有，无论在哪一种实施方式中，使用Ni、Ni-P、Ni-B的某一种作为Ni系层即可，在其上可再形成Au、Ag、Pd中的至少1种的层。关于Au、Ag、Pd，由于在焊锡连接时使其全部扩散到焊锡内部，故不会妨碍Ni系层上的化合物层形成，可提高润湿性。
以下，关于本发明的焊锡连接部的连接可靠性，使用表1示出采用第一实施方式的半导体装置的结构测定了温度循环试验和高温放置试验后的半导体元件和各构件间的连接强度的实验例和比较例。再有，将具有大于等于初期连接强度的80％的强度的情况记为○，将不到80％的情况记为×。此外，只对于热疲劳试验，将热阻变动为初期的200％以内的情况记为○，将大于200％的情况记为×。
(实验例1～4)
确认了在实验例1～4中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验后，都维持大于等于初期连接强度的80％的强度。此外，确认了在200℃1000小时的高温放置试验后，也在实验例1～4中都维持大于等于初期连接强度的80％的强度。再者，确认了它们在试验前和试验后热阻变动都为10％以内。确认了在10000次循环的流过35A的电流使半导体元件发热到200℃、然后通过切断电流冷却到50℃的热疲劳试验后，热阻变动维持在初期的200％以内。
(实验例5～8)
确认了在实验例5～8中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验后，都维持大于等于初期连接强度的80％的强度。此外，确认了在200℃1000小时的高温放置试验后，也在实验例5～8中都维持大于等于初期连接强度的80％的强度。再者，确认了它们在试验前和试验后热阻变动都为10％以内。确认了在10000次循环的流过35A的电流使半导体元件发热到200℃、然后通过切断电流冷却到50℃的热疲劳试验后，热阻变动维持在初期的200％以内。
(实验例9)
确认了在实验例9中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验后，维持大于等于初期连接强度的80％的强度。此外，确认了在200℃1000小时的高温放置试验后，也在实验例9中维持大于等于初期连接强度的80％的强度。再者，确认了它们在试验前和试验后热阻变动为10％以内。确认了在10000次循环的流过35A的电流使半导体元件发热到200℃、然后通过切断电流冷却到50℃的热疲劳试验后，热阻变动维持在初期的200％以内。
(实验例10～12)
确认了在实验例10～12中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验后，都维持大于等于初期连接强度的80％的强度。此外，确认了在200℃1000小时的高温放置试验后，也在实验例10～12中都维持大于等于初期连接强度的80％的强度。再者，确认了关于它们在试验前和试验后热阻变动为初期的10％以内。确认了在10000次循环的流过35A的电流使半导体元件发热到200℃、然后通过切断电流冷却到50℃的热疲劳试验后，热阻变动维持在初期的200％以内。
(比较例1～3)
确认了在比较例1～3中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验后，维持大于等于初期连接强度的80％的强度。但是，在200℃1000小时的高温放置试验后，比较例1、2都变成不到初期连接强度的80％的强度。观察连接剖面可知，在热膨胀率缓冲材料(Cu-Mo合金、Cu/因瓦合金/Cu的Cu)、支撑电极体、引线电极体连接界面上形成了图19那样的焊锡层与金属间化合物层13的界面处的空洞14、图20那样的金属间化合物层13与被连接构件12的界面处的空洞14。可认为因高温放置的缘故而进行界面反应，被连接材料的Ni镀覆层消失，基底的Cu被侵蚀，由于因伴随化合物层的生长的体积变化产生的空洞形成的缘故，连接强度下降了。再者，在图21中作为一例示出将用Sn-3Ag-0.5Cu焊锡连接的样品以200
1000小时高温放置后的连接界面的剖面。由于未形成Cu-Sn化合物的阻挡层，故Sn与Ni反应，Ni层完全消失，进而直到基底的Cu也与Sn反应，形成较厚的Cu-Sn化合物层。其结果，产生大的体积变化，形成空洞，不能维持良好的连接状况。另一方面，在热疲劳试验中，由于在半导体元件连接部中生成了多个图1那样的空洞，故可认为热阻较大地变动了。
(比较例4、5)
确认了在比较例4、5中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验和200℃1000小时的高温放置试验后，都维持大于等于初期连接强度的80％的强度。但是，在10000次循环的热疲劳试验后，热阻变动比初期的200％大。这一点可认为是由于在热疲劳试验中在半导体元件连接部中生成了多个图5那样的空洞，故热阻较大地变动了。
(比较例6)
确认了在比较例6中，在500次循环的-40℃(30分钟)/200℃(30分钟)的温度循环试验和200℃1000小时的高温放置试验后，都维持大于等于初期连接强度的80％的强度。但是，在10000次循环的热疲劳试验后，热阻变动比初期的200％大。这一点可认为是由于在热疲劳试验中在半导体元件连接部中生成了多个图5那样的空洞，故热阻较大地变动了。
以上使用实施方式说明由本发明者提出的发明，同时说明了具体的实验例、比较例，但本发明不限定于上述实施方式，在不偏离其精神的范围内，当然可作各种各样的变更。
按照本发明，即使在Sn系焊锡的熔点之下的扩散速度快的温度区域中，通过在Ni系镀层上形成的以Cu-Ni-Sn化合物为主体的化合物层成为Sn系焊锡与Ni镀层间的阻挡层以抑制连接界面的化合物生长和抑制因大电流引起的半导体元件的发热而产生的半导体元件连接部周边的空洞，也能得到连接可靠性高的半导体装置。
本发明可在不偏离其精神或基本特点的情况下以其它的特定的形式来实施。因而，目前的实施例在各个方面都应认为是说明性的而不是限制性的。本发明的范围由后附的权利要求书而不是由上述的实施例的描述来表示，其意图是包含在权利要求的等同替换的意思和范围内的所有变更。

Claims (19)

1.一种在构件上安装了半导体元件的半导体装置，其特征在于：
连接上述构件与上述半导体元件的第一连接部具有：
在上述构件上形成的第一Ni系层；
在上述第一Ni系层上形成的以Cu-Ni-Sn化合物为主体的第一金属间化合物层；以及
在上述第一金属间化合物层与上述半导体元件之间形成的、含有Cu-Ni-Sn化合物的Sn-Ni-Cu系焊锡层，
上述Sn-Ni-Cu系焊锡层将上述第一金属间化合物层与上述半导体元件连接。
2.如权利要求1中所述的半导体装置，其特征在于：
上述第一连接部的上述Sn-Ni-Cu系焊锡层是含有1～10质量％的Cu和0.05～0.5质量％的Ni的焊锡。
3.如权利要求1中所述的半导体装置，其特征在于：
上述构件是支撑电极体。
4.如权利要求3中所述的半导体装置，其特征在于：
在上述第一连接部中包含Al、Mg、Ag、Zn、Cu、Ni、Cu/因瓦合金/Cu复合材料、Cu/陶瓷/Cu、Cu/Cu2O复合材料、Cu-Mo合金、Ti、Mo、W中的某一种作为缓冲材料。
5.如权利要求3中所述的半导体装置，其特征在于：
上述半导体元件的与上述支撑电极体连接的面的背面与引线电极连接，
连接上述引线电极与上述半导体元件的第二连接部具有：
在上述引线电极上形成的第二Ni系层；
在上述第二Ni系层上形成的以Cu-Ni-Sn化合物为主体的第二金属间化合物层；以及
在上述第二金属间化合物层与上述半导体元件之间形成的Sn-Ni-Cu系焊锡层。
6.如权利要求5中所述的半导体装置，其特征在于：
上述第二连接部的上述Sn-Ni-Cu系焊锡层是含有1～10质量％的Cu和0.05～0.5质量％的Ni的焊锡。
7.如权利要求5中所述的半导体装置，其特征在于：
在上述第二连接部中包含Al、Mg、Ag、Zn、Cu、Ni、Cu/因瓦合金/Cu复合材料、Cu/陶瓷/Cu、Cu/Cu2O复合材料、Cu-Mo合金、Ti、Mo、W中的某一种作为缓冲材料。
8.一种半导体装置，具有：半导体元件；经由第一缓冲材料与上述半导体元件的第一面连接的支撑电极体；以及经由第二缓冲材料与上述半导体元件的第二面连接的引线电极，其特征在于：
连接上述半导体元件的第一面与上述第一缓冲材料的第一连接部具有：
在上述半导体元件的第一面上形成的第一Ni系层；
在上述第一Ni系层上形成的以Cu-Ni-Sn化合物为主体的第一金属间化合物层；以及
在上述第一金属间化合物层与上述第一缓冲材料之间形成的、含有Cu-Ni-Sn化合物的Sn-Ni-Cu系焊锡层，
上述Sn-Ni-Cu系焊锡层将上述第一金属间化合物层与上述半导体元件连接。
9.如权利要求8中所述的半导体装置，其特征在于：
上述第一连接部的上述Sn-Ni-Cu系焊锡层是含有1～10质量％的Cu和0.05～0.5质量％的Ni的焊锡。
10.如权利要求8中所述的半导体装置，其特征在于：
连接上述半导体元件的第二面与上述第二缓冲材料的第二连接部具有：
在上述半导体元件的第二面上形成的第二Ni系层；
在上述第二Ni系层上形成的以Cu-Ni-Sn化合物为主体的第二金属间化合物层；以及
在上述第二金属间化合物层与上述第二缓冲材料之间形成的Sn-Ni-Cu系焊锡层。
11.如权利要求10中所述的半导体装置，其特征在于：
上述第二连接部的上述Sn-Ni-Cu系焊锡层是含有1～10质量％的Cu和0.05～0.5质量％的Ni的焊锡。
12.如权利要求8中所述的半导体装置，其特征在于：
上述支撑电极体与上述第一缓冲材料的连接部用在200℃下含有Cu6Sn5相的Sn系焊锡连接而构成。
13.如权利要求8中所述的半导体装置，其特征在于：
上述引线电极与上述第一缓冲材料的连接部用在200℃下含有Cu6Sn5相的Sn系焊锡连接而构成。
14.如权利要求1中所述的半导体装置，其特征在于：
上述构件是基底基板。
15.如权利要求14中所述的半导体装置，其特征在于：
在上述第一连接部中包含Al、Mg、Ag、Zn、Cu、Ni、Cu/因瓦合金/Cu复合材料、Cu/陶瓷/Cu、Cu/Cu2O复合材料、Cu-Mo合金、Ti、Mo、W中的某一种作为缓冲材料。
16.如权利要求1中所述的半导体装置，其特征在于：
上述构件是与上述半导体元件电连接的引线框。
17.如权利要求1中所述的半导体装置，其特征在于：
上述第一Ni系层是Ni、Ni-P、Ni-B中的某一种。
18.如权利要求1或9所述的半导体装置，其特征在于：
上述第一金属间化合物层的Cu-Ni-Sn化合物与上述Sn-Ni-Cu系焊锡层的Cu-Ni-Sn化合物是具有相同的组成的化合物，
上述Sn-Ni-Cu系焊锡层的Cu-Ni-Sn化合物与上述Sn-Ni-Cu系焊锡层的Cu-Ni-Sn化合物以外的部分具有不同的组成。
19.如权利要求18所述的半导体装置，其特征在于：
上述第一金属间化合物层的Cu-Ni-Sn化合物是通过上述Sn-Ni-Cu系焊锡层的Cu-Ni-Sn化合物在上述第一Ni系层上结晶、析出或移动而形成的。
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